JPH04223436A - Active matrix liquid crystal display element - Google Patents
Active matrix liquid crystal display elementInfo
- Publication number
- JPH04223436A JPH04223436A JP2413755A JP41375590A JPH04223436A JP H04223436 A JPH04223436 A JP H04223436A JP 2413755 A JP2413755 A JP 2413755A JP 41375590 A JP41375590 A JP 41375590A JP H04223436 A JPH04223436 A JP H04223436A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- wiring
- active matrix
- crystal display
- pixel electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 39
- 239000011159 matrix material Substances 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000010409 thin film Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 16
- RUZYUOTYCVRMRZ-UHFFFAOYSA-N doxazosin Chemical compound C1OC2=CC=CC=C2OC1C(=O)N(CC1)CCN1C1=NC(N)=C(C=C(C(OC)=C2)OC)C2=N1 RUZYUOTYCVRMRZ-UHFFFAOYSA-N 0.000 abstract 1
- 206010047571 Visual impairment Diseases 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000004988 Nematic liquid crystal Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 101100214497 Solanum lycopersicum TFT5 gene Proteins 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は個々の表示画素にスイッ
チング素子が接続されて構成されるアクティブマトリッ
クス液晶表示素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix liquid crystal display element constructed by connecting switching elements to individual display pixels.
【0002】0002
【従来の技術】代表的なアクティブマトリックス方式の
表示素子であるTFT型アクティブマトリックス液晶表
示素子は、薄膜トランジスタと画素電極とを有するガラ
ス基板と、全面に透明電極が形成されたガラス基板とを
重ね合わせ、その間隙にネマチック液晶が注入された構
造となっている。その液晶は通常両ガラス基板にある配
向膜によって液晶分子の長軸の方向が90°前後ねじら
れた配向となされ、TN(ツィストネマチック)型液晶
素子を構成している。[Prior Art] A TFT type active matrix liquid crystal display element, which is a typical active matrix type display element, is a combination of a glass substrate having a thin film transistor and a pixel electrode, and a glass substrate on which a transparent electrode is formed on the entire surface. The structure is such that nematic liquid crystal is injected into the gap. The liquid crystal is usually oriented such that the long axes of the liquid crystal molecules are twisted around 90 degrees by alignment films on both glass substrates, forming a TN (twisted nematic) type liquid crystal element.
【0003】ここで、薄膜トランジスタを有するガラス
基板(以下、これをTFT基板と呼ぶ)の構造について
説明する。図2はTFT基板の1画素の部分の平面図で
ある。同図に示されるように、画素電極4は格子状に配
置されたゲート配線1a、1bおよびドレイン配線2a
、2bによって四方を囲まれている。この画素の表示を
制御する信号は、ゲート配線1aの制御信号に従って、
ドレイン配線2aよりTFT5およびそのソース電極3
を介して画素電極4に伝えられる。[0003] Here, the structure of a glass substrate (hereinafter referred to as a TFT substrate) having a thin film transistor will be explained. FIG. 2 is a plan view of one pixel portion of the TFT substrate. As shown in the figure, the pixel electrode 4 includes gate wirings 1a, 1b and drain wirings 2a arranged in a grid pattern.
, 2b on all sides. The signal that controls the display of this pixel is according to the control signal of the gate wiring 1a.
TFT 5 and its source electrode 3 from drain wiring 2a
is transmitted to the pixel electrode 4 via.
【0004】液晶分子を所望の方向に配列させるために
TFT基板に施す配向処理は、従来、図中dで示される
ように、ゲート配線およびドレイン配線と略45°の角
度に行われ、また、対向基板には図中eで示される方向
に配向処理が行われていた。従って、内部の液晶は図中
fで示される方向にねじられてTN型液晶素子を構成し
ていた。Conventionally, alignment treatment applied to a TFT substrate to align liquid crystal molecules in a desired direction is performed at an angle of about 45° with the gate wiring and drain wiring, as shown by d in the figure. The opposing substrate was subjected to alignment treatment in the direction indicated by e in the figure. Therefore, the internal liquid crystal was twisted in the direction indicated by f in the figure to constitute a TN type liquid crystal element.
【0005】[0005]
【発明が解決しようとする課題】アクティブマトリック
ス液晶表示素子では、画素の周りをゲート配線やドレイ
ン配線が走っているので、画素電極とそれらのゲート配
線やドレイン配線との間に電界が発生する。そのため、
配線近くの液晶分子の配向がみだされ、液晶にディスク
リネーション(disclination)と呼ばれる
配向の不連続な境界が発生するようになる。In an active matrix liquid crystal display element, gate wirings and drain wirings run around pixels, so an electric field is generated between the pixel electrode and these gate wirings and drain wirings. Therefore,
The alignment of liquid crystal molecules near the wiring is pushed out, and discontinuous boundaries of alignment called disclinations occur in the liquid crystal.
【0006】従来の配向方向では、液晶の配列が両配線
と画素電極との間の電界の影響を受けるため、ディスク
リネーションが画素電極内部まで発生することとなり、
その結果、表示を変更しても以前の表示がうすく見える
ような焼付現象や残像現象がおきるという問題があった
。[0006] In the conventional alignment direction, the alignment of liquid crystals is affected by the electric field between both wiring lines and the pixel electrode, so disclination occurs even inside the pixel electrode.
As a result, there is a problem in that even if the display is changed, a burn-in phenomenon or an afterimage phenomenon occurs in which the previous display looks faint.
【0007】[0007]
【課題を解決するための手段】本発明のアクティブマト
リックス液晶表示素子は、スイッチング素子基板とこれ
と対向する対向基板とを具備するものであり、スイッチ
ング素子基板には互いに平行な複数の信号配線と、各配
線に挟まれた複数の画素電極と、各画素電極といずれか
の信号配線に接続されたスイッチング素子とが形成され
ており、そして、スイッチング素子基板は、その近くの
液晶分子が信号配線と20°以内の角度で配列するよう
に配向処理が施されている。[Means for Solving the Problems] The active matrix liquid crystal display element of the present invention includes a switching element substrate and a counter substrate facing the switching element substrate, and the switching element substrate has a plurality of signal wiring lines parallel to each other. , a plurality of pixel electrodes sandwiched between each wiring, and a switching element connected to each pixel electrode and one of the signal wirings are formed, and the switching element substrate has liquid crystal molecules near the signal wiring. Orientation processing is performed so that they are arranged at an angle of 20° or less.
【0008】[0008]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。図1は、本発明の一実施例のTFT基板の
1画素部分の平面図である。Embodiments Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of one pixel portion of a TFT substrate according to an embodiment of the present invention.
【0009】同図に示されるように、TFT基板上には
ゲート配線1a、1b、ドレイン配線2a、2b、TF
T5、TFT5のソース電極3、画素電極4が形成され
ている。そしてその表面には配向膜が形成されており、
その配向処理は、図中aで示されるように、ゲート配線
1aおよび1bに略平行な方向になされている。As shown in the figure, on the TFT substrate are gate wirings 1a, 1b, drain wirings 2a, 2b, TF
T5, source electrode 3 of TFT5, and pixel electrode 4 are formed. And an alignment film is formed on its surface,
The orientation process is performed in a direction substantially parallel to gate wirings 1a and 1b, as indicated by a in the figure.
【0010】また、それに対応して対向基板は図中bで
示される方向に配向処理が行われ、内部の液晶は、図中
cで示される方向にねじられてTN型液晶素子を構成し
ている。Correspondingly, the opposing substrate is aligned in the direction shown by b in the figure, and the liquid crystal inside is twisted in the direction shown by c in the figure to form a TN type liquid crystal element. There is.
【0011】通常のTFT駆動状態では、画素電極−ゲ
ート配線間電界の方が、画素電極−ドレイン配線間のそ
れより高くなっている。而して、ここに用いられている
ネマチック液晶分子では、分子の長軸方向の電界の影響
をより強く受け短軸方向の電界からはそれ程影響は受け
ない。従って、この実施例のようにゲート配線と略平行
に液晶を配向させた場合には、ゲート配線−画素電極間
の電界は強いもののここで液晶分子の配列方向が大きく
乱されることはなく、液晶にディスクリネーションが発
生して準安定状態に移るようなことはなくなる。In a normal TFT driving state, the electric field between the pixel electrode and the gate wiring is higher than that between the pixel electrode and the drain wiring. Therefore, the nematic liquid crystal molecules used here are more strongly influenced by the electric field in the direction of the long axis of the molecule, and are not so affected by the electric field in the direction of the short axis of the molecule. Therefore, when the liquid crystal is oriented substantially parallel to the gate wiring as in this embodiment, although the electric field between the gate wiring and the pixel electrode is strong, the alignment direction of the liquid crystal molecules is not greatly disturbed. There is no possibility that disclination will occur in the liquid crystal and the liquid crystal will enter a metastable state.
【0012】一方、実施例の配向方向では、液晶分子は
画素電極−ドレイン配線間の電界の影響は受け易くなっ
ている。しかし、通常、こちら側の電界の方が画素電極
−ゲート配線間の電界より低くなっているので、こちら
側でもディスクリネーションが発生することはない。On the other hand, in the alignment direction of the embodiment, the liquid crystal molecules are easily influenced by the electric field between the pixel electrode and the drain wiring. However, since the electric field on this side is usually lower than the electric field between the pixel electrode and the gate wiring, disclination does not occur on this side either.
【0013】上記実施例では、画素電極−ゲート配線間
の電界の方が高いので、配向をゲート配線と平行となる
ようにしたが、この配向方向が常に最良であるとは限ら
ない。ゲート配線側に常に高電界が発生する訳ではない
からである。ドレイン配線とゲート配線のどちらに平行
に配向させた方がよいかは、各配線と画素電極間の距離
や形状、各配線の駆動電圧などの影響でどちら側により
ディスクリネーションが発生しやすいかによって決定さ
れる。In the above embodiment, since the electric field between the pixel electrode and the gate wiring is higher, the alignment is made parallel to the gate wiring, but this alignment direction is not always the best. This is because a high electric field is not always generated on the gate wiring side. The question of whether it is better to orient parallel to the drain wiring or the gate wiring depends on the distance and shape between each wiring and the pixel electrode, the drive voltage of each wiring, and which side disclination is more likely to occur. determined by
【0014】上記実施例では配線と平行な実施例を示し
たが、平行から多少ずれてもディスクリネーションを低
減させる効果があった。配線と配向の方向が±20°以
内であれば、上述の効果により、焼付現象や残像現象が
低減された。それに対して20°をこえて45°(従来
例の方向)の範囲では、従来と同様に焼付現象や残像現
象が発生した。[0014] In the above embodiment, the wiring was parallel to the wiring, but even if the wiring was slightly deviated from parallel, disclination could be reduced. If the directions of the wiring and the orientation were within ±20°, the burn-in phenomenon and afterimage phenomenon were reduced due to the above-mentioned effects. On the other hand, in the range of more than 20° to 45° (the direction of the conventional example), burn-in phenomena and afterimage phenomena occurred as in the conventional case.
【0015】上記実施例ではTFT型のアクティブマト
リックス液晶表示素子について説明したが、本発明はこ
れに限定されるものではなく、MIM等の他のスイッチ
ング素子を用いたものにも適用される。2端子型のスイ
ッチング素子を用いた場合には、スイッチング素子基板
は、信号配線と20°以内の角度をなすように配向処理
がなされる。[0015] In the above embodiment, a TFT type active matrix liquid crystal display element has been described, but the present invention is not limited thereto, and is also applicable to those using other switching elements such as MIM. When a two-terminal switching element is used, the switching element substrate is aligned so as to form an angle of 20° or less with the signal wiring.
【0016】[0016]
【発明の効果】以上説明したように、本発明は、アクテ
ィブマトリックス液晶表示素子のスイッチング素子基板
において、信号配線が一種類であるときには該信号配線
と大略平行となるように、また、信号配線が二種ある場
合には、よりディスクリネーションが発生し易い側の信
号配線と大略平行となるように、配向処理を施すもので
あるので、本発明によれば、ディスクリネーションが発
生し易い側の信号配線と画素電極との間の電界が液晶分
子の短軸方向に作用することになり、この電界により液
晶の配列が乱されることがなくなり、ディスクリネーシ
ョンの発生が抑制される。よって、本発明によれば、焼
付現象や残像現象が低減される。As explained above, the present invention provides a switching device substrate for an active matrix liquid crystal display device in which when there is only one type of signal wiring, the signal wiring is arranged to be approximately parallel to the signal wiring; If there are two types, the orientation process is performed so that the signal wiring is approximately parallel to the side where disclination is more likely to occur, so according to the present invention, the signal wiring on the side where disclination is more likely to occur The electric field between the signal wiring and the pixel electrode acts in the short axis direction of the liquid crystal molecules, so that the alignment of the liquid crystal is not disturbed by this electric field, and the occurrence of disclination is suppressed. Therefore, according to the present invention, burn-in phenomena and afterimage phenomena are reduced.
【図1】本発明の一実施例を示す平面図。FIG. 1 is a plan view showing one embodiment of the present invention.
【図2】従来例の平面図。FIG. 2 is a plan view of a conventional example.
1a、1b ゲート配線 2a、2b ドレイン配線 3 ソース電極 4 画素電極 5 TFT a、d TFT基板側液晶配向方向 b、e 対向基板側液晶配向方向 c、f 液晶分子のねじれ方向 1a, 1b Gate wiring 2a, 2b Drain wiring 3 Source electrode 4 Pixel electrode 5 TFT a, d TFT substrate side liquid crystal alignment direction b, e Counter substrate side liquid crystal alignment direction c, f Twisting direction of liquid crystal molecules
Claims (2)
に配置された複数の信号配線と、各信号配線間に複数個
配置された画素電極と、各画素電極と前記信号配線との
間に接続されたスイッチング素子と、を具備したアクテ
ィブマトリックス液晶表示素子において、前記スイッチ
ング素子基板は、該スイッチング素子基板近くの液晶分
子が前記信号配線と20°以内の角度で配列するように
配向処理が施されていることを特徴とするアクティブマ
トリックス液晶表示素子。1. A plurality of signal wirings arranged in parallel to each other on a switching element substrate, a plurality of pixel electrodes arranged between each signal wiring, and a plurality of pixel electrodes connected between each pixel electrode and the signal wiring. In the active matrix liquid crystal display device comprising a switching element, the switching element substrate is subjected to alignment treatment such that liquid crystal molecules near the switching element substrate are aligned at an angle of 20° or less with respect to the signal wiring. An active matrix liquid crystal display element characterized by:
た複数のゲート配線と、前記ゲート配線と直交するよう
に配置された複数のドレイン配線と、各ゲート配線と各
ドレイン配線に囲まれた領域毎に設けられた画素電極と
、画素電極と前記ドレイン配線との間にソース・ドレイ
ンが接続され、前記ゲート配線にゲートが接続された複
数の薄膜トランジスタと、を具備したアクティブマトリ
ックス液晶表示素子において、前記TFT基板は、該T
FT基板近くの液晶分子が前記ゲート配線またはドレイ
ン配線と20°以内の角度で配列するように配向処理が
施されていることを特徴とするアクティブマトリックス
液晶表示素子。2. A plurality of gate wirings arranged parallel to each other on a TFT substrate, a plurality of drain wirings arranged perpendicularly to the gate wirings, and a region surrounded by each gate wiring and each drain wiring. In an active matrix liquid crystal display element, the active matrix liquid crystal display element includes a pixel electrode provided for each pixel electrode, a plurality of thin film transistors whose sources and drains are connected between the pixel electrode and the drain wiring, and whose gates are connected to the gate wiring, The TFT substrate has the TFT substrate
An active matrix liquid crystal display element characterized in that an alignment treatment is performed so that liquid crystal molecules near the FT substrate are aligned at an angle of 20 degrees or less with the gate wiring or the drain wiring.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2413755A JPH04223436A (en) | 1990-12-25 | 1990-12-25 | Active matrix liquid crystal display element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2413755A JPH04223436A (en) | 1990-12-25 | 1990-12-25 | Active matrix liquid crystal display element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04223436A true JPH04223436A (en) | 1992-08-13 |
Family
ID=18522327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2413755A Pending JPH04223436A (en) | 1990-12-25 | 1990-12-25 | Active matrix liquid crystal display element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04223436A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0559137A2 (en) * | 1992-03-03 | 1993-09-08 | Matsushita Electric Industrial Co., Ltd. | Active matrix type twisted nematic liquid crystal display |
JPH07294936A (en) * | 1994-04-25 | 1995-11-10 | Casio Comput Co Ltd | Matrix type liquid crystal display device |
JPH10115840A (en) * | 1996-10-08 | 1998-05-06 | Casio Comput Co Ltd | Matrix type liquid crystal display device |
US6300996B1 (en) | 1998-06-01 | 2001-10-09 | Nec Coporation | Liquid crystal display apparatus |
KR100396823B1 (en) * | 2000-07-17 | 2003-09-02 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | Active matrix liquid crystal display device |
US6795155B2 (en) | 2001-03-28 | 2004-09-21 | Seiko Epson Corporation | Transflective liquid crystal display device that controls disinclination caused by an electric field |
US6798475B2 (en) | 1999-03-02 | 2004-09-28 | International Business Machines Corporation | Reflective light valve |
JP2009230011A (en) * | 2008-03-25 | 2009-10-08 | Nikon Corp | Liquid crystal panel, display device, and projector |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62159126A (en) * | 1986-01-07 | 1987-07-15 | Seiko Epson Corp | Liquid crystal electrooptic device |
-
1990
- 1990-12-25 JP JP2413755A patent/JPH04223436A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62159126A (en) * | 1986-01-07 | 1987-07-15 | Seiko Epson Corp | Liquid crystal electrooptic device |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0559137A2 (en) * | 1992-03-03 | 1993-09-08 | Matsushita Electric Industrial Co., Ltd. | Active matrix type twisted nematic liquid crystal display |
EP0559137A3 (en) * | 1992-03-03 | 1994-01-26 | Matsushita Electric Ind Co Ltd | |
US5398127A (en) * | 1992-03-03 | 1995-03-14 | Matsushita Electric Industrial Co., Ltd. | Active matrix twisted nematic liquid crystal display with rubbing direction 1-44 degrees to the electrodes |
JPH07294936A (en) * | 1994-04-25 | 1995-11-10 | Casio Comput Co Ltd | Matrix type liquid crystal display device |
JPH10115840A (en) * | 1996-10-08 | 1998-05-06 | Casio Comput Co Ltd | Matrix type liquid crystal display device |
US6300996B1 (en) | 1998-06-01 | 2001-10-09 | Nec Coporation | Liquid crystal display apparatus |
US6798475B2 (en) | 1999-03-02 | 2004-09-28 | International Business Machines Corporation | Reflective light valve |
US7057686B2 (en) | 1999-03-02 | 2006-06-06 | International Business Machines Corporation | Liquid crystal structure with improved black state, and projector using same |
KR100396823B1 (en) * | 2000-07-17 | 2003-09-02 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | Active matrix liquid crystal display device |
US6795155B2 (en) | 2001-03-28 | 2004-09-21 | Seiko Epson Corporation | Transflective liquid crystal display device that controls disinclination caused by an electric field |
US6801291B2 (en) | 2001-03-28 | 2004-10-05 | Seiko Epson Corporation | Liquid crystal device that controls disinclination caused by an electric field |
JP2009230011A (en) * | 2008-03-25 | 2009-10-08 | Nikon Corp | Liquid crystal panel, display device, and projector |
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