JPH04216683A - Manufacture of light emitting element - Google Patents
Manufacture of light emitting elementInfo
- Publication number
- JPH04216683A JPH04216683A JP2411198A JP41119890A JPH04216683A JP H04216683 A JPH04216683 A JP H04216683A JP 2411198 A JP2411198 A JP 2411198A JP 41119890 A JP41119890 A JP 41119890A JP H04216683 A JPH04216683 A JP H04216683A
- Authority
- JP
- Japan
- Prior art keywords
- algaas
- protective film
- chip
- film
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 37
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 36
- 230000001681 protective effect Effects 0.000 claims abstract description 30
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 20
- 239000007864 aqueous solution Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 15
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 15
- 238000004381 surface treatment Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 230000006866 deterioration Effects 0.000 abstract description 6
- 239000003822 epoxy resin Substances 0.000 abstract description 6
- 229920000647 polyepoxide Polymers 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052593 corundum Inorganic materials 0.000 abstract description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 2
- 229910021502 aluminium hydroxide Inorganic materials 0.000 abstract 1
- 229910001679 gibbsite Inorganic materials 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 229910018404 Al2 O3 Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、ＡｌＧａＡｓチップ表
面の保護膜の形成により輝度の劣化を有効に防止するこ
とができるようにした発光素子の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a light emitting device in which deterioration in brightness can be effectively prevented by forming a protective film on the surface of an AlGaAs chip.
【０００２】0002
【従来の技術】ｐｎ接合を有する従来のＡｌＧａＡｓ発
光素子のランプＬ’は、第２図に示すごとくＡｌＧａＡ
ｓチップ２’のｎ層４側にはｎ電極６及びｐ層８側には
ｐ電極１０を設け、エポキシ樹脂でモールド１２した構
造が一般に知られている。エポキシ樹脂は一般に吸湿性
で防湿効果に乏しいため、大気中の水分がモールド１２
内に侵入し、ＡｌＧａＡｓ中のＡｌと反応して水酸化物
の白濁膜１４がＡｌＧａＡｓチップ２’の表面に形成さ
れる。この水酸化アルミニウムの白濁膜１４のために、
光取り出し効率が低下し、ＡｌＧａＡｓＬＥＤの輝度が
低下するという問題が発生していた。2. Description of the Related Art A lamp L' of a conventional AlGaAs light emitting device having a pn junction is made of AlGaAs as shown in FIG.
A generally known structure is that an n electrode 6 is provided on the n layer 4 side of the s chip 2', a p electrode 10 is provided on the p layer 8 side, and the chips are molded 12 with epoxy resin. Epoxy resins are generally hygroscopic and have poor moisture-proofing effects, so moisture in the atmosphere can
When the hydroxide penetrates into the AlGaAs chip 2' and reacts with Al in the AlGaAs, a cloudy hydroxide film 14 is formed on the surface of the AlGaAs chip 2'. Because of this cloudy aluminum hydroxide film 14,
A problem has occurred in that the light extraction efficiency is reduced and the brightness of the AlGaAs LED is reduced.
【０００３】一方、このＡｌＧａＡｓ混晶は、アンモニ
アと過酸化水素を含む水溶液に浸水処理をすることによ
って酸化皮膜を形成し、それを保護膜とし結晶の安定化
を計る技術が報告されている（第４２回応用物理学会予
行集、６００頁、９ａ−Ｄ−３，１９８１，及び第４４
回応用物理学会予行集、４８５頁、２８ａ−Ｈ−３、１
９８３）。On the other hand, a technique has been reported in which this AlGaAs mixed crystal is immersed in an aqueous solution containing ammonia and hydrogen peroxide to form an oxide film, and this is used as a protective film to stabilize the crystal ( Proceedings of the 42nd Japan Society of Applied Physics, 600 pages, 9a-D-3, 1981, and No. 44
Proceedings of the Japan Society for Applied Physics, 485 pages, 28a-H-3, 1
983).
【０００４】後者の報文においては、好適なＨ２ Ｏ２
／ＮＨ４ ＯＨ比が２０、つまり１．５重量％のアン
モニアと３０重量％の過酸化水素を含む水溶液として、
その場合の膜厚と形成時間について開示し、更に熱処理
によって保護膜の厚さが約１／２に減少することが教示
されている。しかしこの方法では、膜形成後にさらに熱
処理工程を必要としているため工程が複雑となり生産性
を低下させる原因となる。[0004] In the latter paper, a suitable H2O2
/NH4OH ratio of 20, i.e. as an aqueous solution containing 1.5% by weight ammonia and 30% by weight hydrogen peroxide.
The film thickness and formation time in that case are disclosed, and it is further taught that the thickness of the protective film is reduced to about 1/2 by heat treatment. However, this method requires an additional heat treatment step after film formation, which complicates the process and reduces productivity.
【０００５】また、このような開示技術にも関わらず、
ＡｌＧａＡｓ発光素子の空気中の湿気に起因する輝度の
低下問題は依然として完全には解消されていない。[0005]Also, despite such disclosed technology,
The problem of reduced brightness of AlGaAs light emitting devices due to moisture in the air has not yet been completely resolved.
【０００６】[0006]
【発明が解決しようとする課題】本発明者は、上記した
従来技術の問題点を解決するために鋭意研究を重ねた結
果、本発明を完成したものである。SUMMARY OF THE INVENTION The present inventor has completed the present invention as a result of extensive research to solve the above-mentioned problems of the prior art.
【０００７】本発明は、ＡｌＧａＡｓチップ表面へのひ
び割れの無い、緻密かつ均質な保護膜の形成により光取
り出し効率の低下を防止し、輝度の劣化を有効に防止す
ることができると共に、膜形成後の熱処理工程を必要と
しないため生産性を向上させることができるようにした
発光素子の製造方法を提供することを目的とする。[0007] The present invention prevents a decrease in light extraction efficiency by forming a crack-free, dense and homogeneous protective film on the surface of an AlGaAs chip, and effectively prevents deterioration in brightness. It is an object of the present invention to provide a method for manufacturing a light emitting element, which can improve productivity because it does not require a heat treatment step.
【０００８】[0008]
【課題を解決するための手段】上記課題を解決するため
に、本発明の発光素子の製造方法においては、ｐｎ接合
を有するＡｌＧａＡｓチップを０．３〜０．６重量％の
アンモニアと２５〜３５重量％の過酸化水素を含む水溶
液中に浸漬して、該チップの表面処理を行うようにした
。[Means for Solving the Problems] In order to solve the above problems, in the method for manufacturing a light emitting device of the present invention, an AlGaAs chip having a pn junction is mixed with 0.3 to 0.6% by weight of ammonia and 25 to 35% by weight of ammonia. The surface of the chip was treated by immersing it in an aqueous solution containing % by weight of hydrogen peroxide.
【０００９】また、前記ＡｌＧａＡｓチップの表面に１
０００Å以上の厚さの酸化アルミニウムの保護膜を形成
するようにすればより好ましい。[0009] Furthermore, on the surface of the AlGaAs chip, 1
It is more preferable to form a protective film of aluminum oxide with a thickness of 000 Å or more.
【００２０】[0020]
【作用】本発明においては、ＡｌＧａＡｓチップの表面
へ単に酸化アルミニウムの皮膜を形成するだけでは足り
ず、ひび割れの無い、緻密（熱処理によって膜厚が急激
に減少しない）かつ均質な保護膜を形成することが必要
である。このような良好な酸化アルミニウム皮膜を形成
することにより、初めて熱処理工程を必要とせずＡｌＧ
ａＡｓ発光素子光取り出し効率の低下を防止し、輝度の
劣化を有効に防止するという本発明の目的を達成するこ
とができる。[Function] In the present invention, it is not enough to simply form an aluminum oxide film on the surface of an AlGaAs chip, but to form a crack-free, dense (film thickness does not rapidly decrease due to heat treatment), and homogeneous protective film. It is necessary. By forming such a good aluminum oxide film, AlG can be produced for the first time without the need for a heat treatment process.
The object of the present invention, which is to prevent a decrease in light extraction efficiency of an aAs light emitting element and effectively prevent deterioration in brightness, can be achieved.
【００２１】[0021]
【実施例】本発明によって製造したＡｌＧａＡｓ発光素
子ランプＬを第１図に示した。第１図において第２図と
同様の部材は同一の符号で示す。EXAMPLE FIG. 1 shows an AlGaAs light emitting element lamp L manufactured according to the present invention. In FIG. 1, members similar to those in FIG. 2 are designated by the same reference numerals.
【００２２】本発明方法によって製造したＡｌＧａＡｓ
発光素子ランプＬは、第２図に示した従来のＡｌＧａＡ
ｓ発光素子ランプＬ’と同様に、ＡｌＧａＡｓチップ２
のｎ層４側にはｎ電極６及びｐ層８側にはｐ電極１０を
設け、エポキシ樹脂でモールド１２した構造を有してい
る。そして、このＡｌＧａＡｓチップ２の表面に保護膜
として酸化アルミニウム保護膜１６が形成されているも
のである。この保護膜１６の存在により、エポキシ樹脂
のモールド１２から侵入する水分はＡｌＧａＡｓチップ
２に触れることはなくなる。従って、水酸化アルミニウ
ムの白濁膜が形成されることもなく、ＡｌＧａＡｓ発光
素子ランプの光取り出し効率の低下はなくなり、輝度が
低下するという現象も著しく抑制された。AlGaAs produced by the method of the present invention
The light emitting element lamp L is the conventional AlGaA shown in FIG.
s Similarly to the light emitting element lamp L', the AlGaAs chip 2
An n-electrode 6 is provided on the n-layer 4 side, a p-electrode 10 is provided on the p-layer 8 side, and the structure is molded 12 with epoxy resin. An aluminum oxide protective film 16 is formed on the surface of this AlGaAs chip 2 as a protective film. Due to the presence of this protective film 16, moisture entering from the epoxy resin mold 12 will not come into contact with the AlGaAs chip 2. Therefore, a cloudy aluminum hydroxide film was not formed, the light extraction efficiency of the AlGaAs light-emitting element lamp did not decrease, and the phenomenon of decrease in brightness was significantly suppressed.
【００２３】上記したような効果を達成することのでき
る酸化アルミニウム保護膜はひび割れがなくかつ膜質が
安定していることが必要である。このような良質の酸化
アルミニウム保護膜を作成するためには、従来知られて
いる如く、ＡｌＧａＡｓチップ２を単にアンモニアと過
酸化水素を含む水溶液に浸水処理すればよいものではな
い。本発明方法におけるが如く、ＡｌＧａＡｓチップの
表面を０．３〜０．６重量％のアンモニアと２５〜３５
重量％の過酸化水素を含む水溶液中において浸水処理し
該発光素子表面に１０００Å以上の厚さの酸化アルミニ
ウムの透明膜を形成することによってひび割れがなくか
つ膜質が安定している保護膜が形成できるものである。[0023] In order to achieve the above-mentioned effects, the aluminum oxide protective film must be free from cracks and have stable film quality. In order to create such a high-quality aluminum oxide protective film, it is not enough to simply immerse the AlGaAs chip 2 in an aqueous solution containing ammonia and hydrogen peroxide, as is conventionally known. As in the method of the present invention, the surface of the AlGaAs chip is treated with 0.3-0.6% by weight of ammonia and 25-35% by weight of ammonia.
A protective film with no cracks and stable film quality can be formed by forming a transparent film of aluminum oxide with a thickness of 1000 Å or more on the surface of the light emitting element by immersion in an aqueous solution containing % by weight of hydrogen peroxide. It is something.
【００２４】次に処理時間を１〜３０分の範囲でかつ溶
液組成を０．３〜１．８重量％のアンモニアと２５〜３
５重量％の過酸化水素を含んだ水溶液に変えてＡｌＧａ
Ａｓチップの表面を浸水処理した場合の膜質について光
学顕微鏡を使って外観検査した結果を表１に示す。表１
において、◎はひび無し（良好）、○はひび少し、△は
ひび多し、×はウロコ状（不良）を示す。Next, the treatment time was in the range of 1 to 30 minutes, and the solution composition was adjusted to 0.3 to 1.8% by weight of ammonia and 25 to 3% by weight of ammonia.
AlGa was replaced with an aqueous solution containing 5% by weight of hydrogen peroxide.
Table 1 shows the results of visual inspection using an optical microscope for the film quality when the surface of the As chip was subjected to water immersion treatment. Table 1
◎ indicates no cracks (good), ◯ indicates few cracks, △ indicates many cracks, and × indicates scaly (poor).
【００２５】[0025]
【表１】[Table 1]
【００２６】表１から保護膜の膜質の外観観察は処理時
間を１〜３０分の範囲でかつ溶液組成を０．３〜０．６
重量％のアンモニアと２５〜３５重量％の過酸化水素を
含んだ水溶液で浸水処理した場合の膜質のみ良好でその
他の場合はあまり好ましい膜質とは言えないことがわか
った。また、膜質の検査で１０００Åの満たないものは
薄すぎるために膜質が不安定であることが解った。From Table 1, the appearance of the film quality of the protective film was observed when the treatment time was in the range of 1 to 30 minutes and the solution composition was in the range of 0.3 to 0.6.
It was found that the film quality was good only when subjected to water immersion treatment with an aqueous solution containing 25 to 35 wt% ammonia and 25 to 35 wt% hydrogen peroxide, and the film quality was not so favorable in other cases. In addition, when inspecting the film quality, it was found that films with a thickness of less than 1000 Å were too thin and the film quality was unstable.
【００２７】次に、溶液組成を０．５重量％のアンモニ
アと３０重量％の過酸化水素を含んだ水溶液で浸水処理
した場合の浸水時間と膜質の関係を調べた結果を図３に
示した。図３の結果から溶液組成を０．５重量％のアン
モニアと３０重量％の過酸化水素を含んだ水溶液の場合
には膜質２．５分間の処理で約１０００Åとなり１０分
間の処理で約３０００Åとなり飽和することが解った。Next, Figure 3 shows the results of investigating the relationship between the immersion time and film quality when the solution was immersed in an aqueous solution containing 0.5% by weight of ammonia and 30% by weight of hydrogen peroxide. . From the results shown in Figure 3, when the solution composition is an aqueous solution containing 0.5% by weight of ammonia and 30% by weight of hydrogen peroxide, the film thickness becomes approximately 1000 Å after 2.5 minutes of treatment, and approximately 3000 Å after 10 minutes of treatment. I realized that it was saturated.
【００２８】次に、溶液組成を０．５重量％のアンモニ
アと３０重量％の過酸化水素を含んだ水溶液と１．５重
量％のアンモニアと３０重量％の過酸化水素を含んだ水
溶液で浸水処理したそれぞれの生成膜を４５０℃、Ｎ２
雰囲気、２０分間熱処理した場合の膜質の変化につい
て調べた結果を図４に示した。同図の結果より、上記０
．５重量％のアンモニアと３０重量％の過酸化水素を含
んだ水溶液を用いて生成した膜はほとんど変化せず、１
．５重量％のアンモニアと３０重量％の過酸化水素を含
んだ水溶液を用いて生成したものに比較して極めて安定
であることが解った。Next, the solution composition was immersed in an aqueous solution containing 0.5% by weight ammonia and 30% by weight hydrogen peroxide, and an aqueous solution containing 1.5% by weight ammonia and 30% by weight hydrogen peroxide. Each treated film was heated at 450°C with N2
FIG. 4 shows the results of examining changes in film quality when heat treated in an atmosphere for 20 minutes. From the results in the same figure, the above 0
．． The film produced using an aqueous solution containing 5% by weight ammonia and 30% by weight hydrogen peroxide showed almost no change and 1
．． It was found to be extremely stable compared to that produced using an aqueous solution containing 5% by weight ammonia and 30% by weight hydrogen peroxide.
【００２９】前記した文献（第４４回応用物理学会予行
集、４８５頁、２８ａ−Ｈ−３、１９８３）では好適な
Ｈ２ Ｏ２ ／ＮＨ４ Ｏ比が２０つまり１．５重量％
のアンモニアと３０重量％の過酸化水素を含む水溶液と
して、その場合の膜厚と形成時間について開示し、更に
熱処理によって保護膜の厚さが約１／２に減少し強固な
安定した膜となることが教示されている。しかし逆に言
えば、この場合、熱処理しなければ強固でなくかつ不安
定な膜の状態であることが示されていることとなる。[0029] According to the above-mentioned document (44th Japan Society of Applied Physics proceedings, p. 485, 28a-H-3, 1983), the preferred H2O2/NH4O ratio is 20, that is, 1.5% by weight.
Discloses the film thickness and formation time as an aqueous solution containing 30% by weight of ammonia and 30% by weight of hydrogen peroxide, and further heat treatment reduces the thickness of the protective film by about 1/2, resulting in a strong and stable film. This is what is taught. However, conversely, in this case, it has been shown that the film is not strong and unstable unless it is heat treated.
【００３０】本発明に規定した条件によって酸化アルミ
ニウム保護膜をＡｌＧａＡｓチップ表面に形成すれば膜
生成後の面倒な熱処理工程を要することなくひび割れが
なくかつ膜質が安定している保護膜が形成できるもので
ある。If an aluminum oxide protective film is formed on the surface of an AlGaAs chip under the conditions specified in the present invention, a crack-free and stable protective film can be formed without the need for a troublesome heat treatment process after film formation. It is.
【００３１】続いて、溶液組成を０．５重量％のアンモ
ニアと３０重量％の過酸化水素を含んだ水溶液で２．５
分間浸水処理し酸化アルミニウム保護膜をＡｌＧａＡｓ
チップ表面に形成した後、図１に示した構成のランプを
作成し、高温高湿信頼性試験（８０℃、１００％ＲＨ、
通電電流５０ｍＡ（ＤＣ）、１０００時間通電）を行い
、酸化アルミニウム保護膜を形成しないＡｌＧａＡｓチ
ップを用いたランプ（図２の構成）の性能と比較して図
５に示した。同図の結果から従来の酸化アルミニウム保
護膜を形成しないＡｌＧａＡｓチップを用いたランプで
は急激に輝度が劣化したのに対し、本発明方法により酸
化アルミニウム保護膜をＡｌＧａＡｓチップ表面に形成
したチップを用いたランプは１０００時間経過後でも高
い残光率を示し、輝度の劣化が効果的に防止されること
が確認できた。Next, the solution composition was adjusted to 2.5% by weight with an aqueous solution containing 0.5% by weight of ammonia and 30% by weight of hydrogen peroxide.
AlGaAs was immersed in water for a minute to form an aluminum oxide protective film.
After forming it on the chip surface, a lamp with the configuration shown in Figure 1 was created, and a high temperature and high humidity reliability test (80°C, 100% RH,
FIG. 5 shows a comparison with the performance of a lamp (configuration shown in FIG. 2) using an AlGaAs chip without an aluminum oxide protective film formed by applying current at a current of 50 mA (DC) for 1000 hours. The results in the same figure show that the brightness of the conventional lamp using an AlGaAs chip without an aluminum oxide protective film deteriorated rapidly, whereas the brightness of the lamp using the AlGaAs chip with an aluminum oxide protective film formed on the surface of the AlGaAs chip using the method of the present invention was found. The lamp showed a high afterglow rate even after 1000 hours, and it was confirmed that deterioration of brightness was effectively prevented.
【００３２】[0032]
【発明の効果】以上述べたごとく、本発明によれば、Ａ
ｌＧａＡｓチップの表面へひび割れの無い、緻密（熱処
理によって膜厚が急激に減少しない）かつ均質な酸化ア
ルミニウム保護膜を形成することにより、初めて熱処理
工程を必要とせずＡｌＧａＡｓ発光素子光取り出し効率
の低下を防止し輝度の劣化を有効に防止したＡｌＧａＡ
ｓ発光素子を製造することができる。[Effects of the Invention] As described above, according to the present invention, A
By forming a crack-free, dense (the film thickness does not rapidly decrease due to heat treatment), and homogeneous aluminum oxide protective film on the surface of an lGaAs chip, we have made it possible for the first time to eliminate the reduction in light extraction efficiency of an AlGaAs light emitting device without the need for a heat treatment process. AlGaA that effectively prevents brightness deterioration
s light emitting device can be manufactured.
【図１】本発明方法によりＡｌ２ Ｏ３ 保護膜を生成
したＡｌＧａＡｓチップを用いて作成したランプの概略
説明図である。FIG. 1 is a schematic illustration of a lamp manufactured using an AlGaAs chip with an Al2 O3 protective film formed by the method of the present invention.
【図２】Ａｌ２ Ｏ３ 保護膜のないＡｌＧａＡｓチッ
プを用いて作成した従来のランプの概略説明図である。FIG. 2 is a schematic illustration of a conventional lamp made using an AlGaAs chip without an Al2O3 protective film.
【図３】膜生成時間と膜厚との関係を示すグラフである
。FIG. 3 is a graph showing the relationship between film formation time and film thickness.
【図４】保護膜生成後に熱処理を行った場合の保護膜の
膜厚の変化を示すグラフである。FIG. 4 is a graph showing changes in the thickness of a protective film when heat treatment is performed after the formation of the protective film.
【図５】高温高湿信頼性試験の結果を示すグラフである
。FIG. 5 is a graph showing the results of a high temperature and high humidity reliability test.
Ｌ 発光素子ランプ １６ 酸化アルミニウム保護膜 L Light emitting element lamp 16 Aluminum oxide protective film
Claims (2)
を０．３〜０．６重量％のアンモニアと２５〜３５重量
％の過酸化水素を含む水溶液中に浸漬して、該チップの
表面処理を行うことを特徴とする発光素子の製造方法。1. Surface treatment of an AlGaAs chip having a pn junction is performed by immersing the chip in an aqueous solution containing 0.3 to 0.6% by weight of ammonia and 25 to 35% by weight of hydrogen peroxide. A method for manufacturing a light emitting device characterized by:
Å以上の厚さの酸化アルミニウムの保護膜を形成するこ
とを特徴とする請求項１記載の発光素子の製造方法。[Claim 2] 1000% on the surface of the AlGaAs chip.
2. The method of manufacturing a light emitting device according to claim 1, further comprising forming a protective film of aluminum oxide with a thickness of Å or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP41119890A JP2559536B2 (en) | 1990-12-17 | 1990-12-17 | Method of manufacturing light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP41119890A JP2559536B2 (en) | 1990-12-17 | 1990-12-17 | Method of manufacturing light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04216683A true JPH04216683A (en) | 1992-08-06 |
| JP2559536B2 JP2559536B2 (en) | 1996-12-04 |
Family
ID=18520237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP41119890A Expired - Fee Related JP2559536B2 (en) | 1990-12-17 | 1990-12-17 | Method of manufacturing light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2559536B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0645829A1 (en) * | 1993-09-24 | 1995-03-29 | Shin-Etsu Handotai Company Limited | A method for manufacturing a semiconductor light emitting device |
| JP2000208811A (en) * | 1999-01-14 | 2000-07-28 | Agilent Technol Inc | Semiconductor device |
| JP2011035017A (en) * | 2009-07-30 | 2011-02-17 | Hitachi Cable Ltd | Light-emitting device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49115893A (en) * | 1973-03-08 | 1974-11-06 | ||
| JPS52130294A (en) * | 1976-04-24 | 1977-11-01 | Oki Electric Ind Co Ltd | Production of semiconductor device |
-
1990
- 1990-12-17 JP JP41119890A patent/JP2559536B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49115893A (en) * | 1973-03-08 | 1974-11-06 | ||
| JPS52130294A (en) * | 1976-04-24 | 1977-11-01 | Oki Electric Ind Co Ltd | Production of semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0645829A1 (en) * | 1993-09-24 | 1995-03-29 | Shin-Etsu Handotai Company Limited | A method for manufacturing a semiconductor light emitting device |
| JPH0794777A (en) * | 1993-09-24 | 1995-04-07 | Shin Etsu Handotai Co Ltd | Manufacture of light emitting device |
| US5459106A (en) * | 1993-09-24 | 1995-10-17 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing a semiconductor light emitting device |
| JP2000208811A (en) * | 1999-01-14 | 2000-07-28 | Agilent Technol Inc | Semiconductor device |
| JP2011035017A (en) * | 2009-07-30 | 2011-02-17 | Hitachi Cable Ltd | Light-emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2559536B2 (en) | 1996-12-04 |
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