JPH0420202Y2 - - Google Patents
Info
- Publication number
- JPH0420202Y2 JPH0420202Y2 JP14951386U JP14951386U JPH0420202Y2 JP H0420202 Y2 JPH0420202 Y2 JP H0420202Y2 JP 14951386 U JP14951386 U JP 14951386U JP 14951386 U JP14951386 U JP 14951386U JP H0420202 Y2 JPH0420202 Y2 JP H0420202Y2
- Authority
- JP
- Japan
- Prior art keywords
- far
- pot
- infrared
- absorbing film
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 229920003002 synthetic resin Polymers 0.000 claims description 2
- 239000000057 synthetic resin Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000002689 soil Substances 0.000 description 6
- 101100298222 Caenorhabditis elegans pot-1 gene Proteins 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008635 plant growth Effects 0.000 description 2
- 241001465754 Metazoa Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Cultivation Of Plants (AREA)
- Cultivation Receptacles Or Flower-Pots, Or Pots For Seedlings (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
本考案は、ビニールポツト等の植物育成用鉢の
改良に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to improvement of pots for growing plants, such as vinyl pots.
園芸用植物のタネは、通常、箱状のプラントベ
ツドで、まとめて発芽された後、植物が一定の大
きさとなるまで、植物育成用鉢に、１本ずつ植え
かえて栽培される。
Seeds of garden plants are usually germinated in a box-shaped plant bed and then planted one by one in pots for growing plants until the plants reach a certain size.
植物育成用鉢としては、太陽の直射光線による
熱吸収効果を最大とするために、輻射熱の吸収率
の高い黒色の薄肉ビニールポツトが、広く使用さ
れている。 As pots for growing plants, black thin-walled vinyl pots, which have a high rate of absorption of radiant heat, are widely used in order to maximize the effect of absorbing heat from direct sunlight.
しかし、黒色が熱吸収効果が高いのは、一般に
太陽光線の可視領域の近くにおいてであり、長波
長領域の遠赤外線を利用する場合には、必ずし
も、黒色のものが最適とは言えない。
However, black generally has a high heat absorption effect near the visible region of sunlight, and black is not necessarily optimal when using far infrared rays in the long wavelength region.
遠赤外線は、波長１〜10μmの電磁波であつて、
比較的低温の物体、例えば36℃程度の人体等から
多量に発生するものであり、動植物の表面だけで
はなく、その深部まで達して、動植物を内部から
加熱するという低温加熱の効果がある。
Far-infrared rays are electromagnetic waves with a wavelength of 1 to 10 μm.
It is generated in large quantities from relatively low-temperature objects, such as the human body at around 36°C, and has the effect of low-temperature heating, reaching not only the surface of animals and plants but also deep inside them, heating them from within.
そのため、最近、この遠赤外線を多量に放射す
る材料が開発され、発熱体に、この遠赤外線放射
物質を塗布した熱源も製造されている。 Therefore, recently, materials that emit a large amount of far-infrared rays have been developed, and heat sources have also been manufactured in which a heating element is coated with this far-infrared ray-emitting material.
これら遠赤外線放射物質は、遠赤外線の放射物
質であると同時に、遠赤外線吸収物質としての性
質をも有しており、この遠赤外線を吸収する性質
を使用すれば、常温より多少高めの温度の物体か
ら放出される遠赤外線を、有効に吸収することが
できる。 These far-infrared emitting materials are not only far-infrared-emitting materials, but also have the property of far-infrared-absorbing materials, and if they use this far-infrared-absorbing property, they can be used at temperatures slightly higher than room temperature. Far-infrared rays emitted from objects can be effectively absorbed.
すなわち、植物育成用鉢の外周面に遠赤外線吸
収膜を設けると、周囲よりも低温の場合に、室温
よりも多少高めの周囲の物体から放出される遠赤
外線は、この植物育成用鉢の外周面に設けた遠赤
外線吸収膜を通して、鉢内に吸収される。したが
つて、用土及び栽培植物の保温用熱エネルギーと
して、これら遠赤外線を利用することは有効であ
る。 In other words, if a far infrared absorbing film is provided on the outer surface of a plant growing pot, when the temperature is lower than the surroundings, far infrared rays emitted from surrounding objects that are slightly higher than room temperature will be absorbed by the outer periphery of this plant growing pot. The infrared rays are absorbed into the pot through a far-infrared absorbing film provided on the surface. Therefore, it is effective to use these far infrared rays as thermal energy for keeping soil and cultivated plants warm.
本考案は、上述したような、遠赤外線吸収膜の
低温の領域における効果に着目してなされたもの
で、植物育成用鉢の外周面に、遠赤外線吸収膜を
設けものである。 The present invention has been made by focusing on the effect of the far-infrared absorbing film in the low temperature region as described above, and the far-infrared absorbing film is provided on the outer peripheral surface of a pot for growing plants.
植物育成用鉢は、比較的低温度の壁等か放射さ
れる遠赤外線を、遠赤外線吸収膜により吸収す
る。したがつて、これら潜在的な熱エネルギー
が、植物育成用鉢の用土の保温用熱として有効に
利用される。
A plant growing pot uses a far-infrared absorbing film to absorb far-infrared rays emitted from relatively low-temperature walls. Therefore, these potential thermal energies are effectively used as heat for keeping the soil of the pot for growing plants warm.
本考案の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described based on the drawings.
１は、合成樹脂材料、例えばビニールからなる
植物育成用鉢で、底板１ａと、この底板１ａの外
周縁より上向きに連設された環状周壁１ｂとから
なる有底筒状のものである。 Reference numeral 1 denotes a pot for growing plants made of a synthetic resin material, such as vinyl, and is a bottomed cylindrical pot consisting of a bottom plate 1a and an annular peripheral wall 1b extending upward from the outer periphery of the bottom plate 1a.
この環状周壁１ｂの外周面１ｃの上下端部を除
く部分は、遠赤外線吸収膜２によつて被覆されて
いる。なおこの遠赤外線吸収膜２の表面は、多数
の凹凸を有する粗面としておくのが望ましい。 A portion of the outer circumferential surface 1c of the annular circumferential wall 1b except for the upper and lower ends is covered with a far-infrared absorbing film 2. Note that the surface of this far-infrared absorbing film 2 is desirably made into a rough surface having many irregularities.
この遠赤外線吸収膜２は、遠赤外線放射物質と
して知られる。ジルコニア（ZrO2）、ジルコン
（ZrO2・SiO2）、チタニアTiO2、アルミナ（Al2
O3）等の金属酸化物からなるセラミツクス材料
と塗料とを混合した塗材を、環状周壁に塗着する
ことによつて形成されている。 This far-infrared absorbing film 2 is known as a far-infrared emitting material. Zirconia (ZrO 2 ), zircon (ZrO 2・SiO 2 ), titania TiO 2 , alumina (Al 2
It is formed by coating the annular peripheral wall with a coating material that is a mixture of a ceramic material made of a metal oxide such as O 3 ) and a coating material.
この遠赤外線吸収膜２は、空気が冷えていて
も、鉢周囲の壁や、器物に潜在する潜熱によつて
放出される遠赤外線を吸収するため、植物育成用
鉢１は、少くとも、遠赤外線を放射しているもの
の温度程度までは保温され、植物の育成に対して
好効果が得られる。 This far-infrared absorbing film 2 absorbs far-infrared rays emitted by the latent heat latent in the walls around the pot and objects even when the air is cold. Even though it emits infrared rays, it is kept warm to a certain temperature, which has a positive effect on plant growth.
上記植物育成用鉢１を使用するには、第１図に
示すように、植物育成用鉢１内に、用土３を入
れ、成葉が２〜３枚程度の、まだ充分には成育し
てない苗４を植えつける。 To use the above-mentioned plant growing pot 1, as shown in Fig. 1, put soil 3 into the plant growing pot 1, and add soil 3 to the plant growing pot 1. Plant 4 seedlings.
このような植物育成用鉢１を、第２図に示すよ
うに、植物育成用棚５に設けた階段式の 各棚板
６上に、多数並置して、温室等の所定の場所に設
置して、苗４を育成する。 As shown in FIG. 2, a large number of such plant growing pots 1 are arranged side by side on each stepped shelf board 6 provided on the plant growing shelf 5, and installed in a predetermined place such as a greenhouse. and grow seedlings 4.
各植物育成用鉢１は、植物育成用棚５の周囲の
壁（図示略）等から放出される遠赤外線を吸収
し、それらの潜熱が植物の育成のために利用され
る。 Each plant growing pot 1 absorbs far infrared rays emitted from the walls (not shown) around the plant growing shelf 5, and the latent heat thereof is used for growing the plants.
上述したように、本考案によると、植物育成用
鉢の外周面に、遠赤外線吸収膜を設けたことによ
り、気温の高低にかかわりなく周囲の器物のもつ
温度によつて、鉢外から遠赤外線を吸収して、鉢
内の用土の温度を保つことができる。そのため、
栽培植物の育成に際して、温室等の気温の温度制
御が容易となる。
As mentioned above, according to the present invention, by providing a far-infrared absorbing film on the outer circumferential surface of a pot for growing plants, far-infrared rays can be absorbed from outside the pot depending on the temperature of the surrounding equipment regardless of the temperature. can be absorbed to maintain the temperature of the soil inside the pot. Therefore,
When growing cultivated plants, it becomes easy to control the temperature of a greenhouse or the like.
上記効果は、遠赤外線吸収膜の表面に多数の凹
凸を設けておくことにより助長される。 The above effect is promoted by providing a large number of irregularities on the surface of the far-infrared absorbing film.
また、温室等の温度制御を、パネル型のヒー
タ、又は壁に埋込式のヒータ等として、これらヒ
ータからの遠赤外線を、直接に植物育成用鉢に当
てて、保温させることもできる。 Further, the temperature of a greenhouse or the like can be controlled by using a panel heater or a heater embedded in the wall, and the far infrared rays from these heaters can be applied directly to the pots for growing plants to keep them warm.
第１図は、本考案の一実施例を、一部切欠して
示す正面図、第２図は第１図の植物育成用鉢を、
棚板上に並べた栽培状態を示す斜視図である。
１……植物育成用鉢、１ａ……底板、１ｂ……
環状周壁、１ｃ……外周面、２……遠赤外線吸収
膜、３……用土、４……苗、５……植物育成用
棚。
Fig. 1 is a partially cutaway front view of an embodiment of the present invention, and Fig. 2 shows the pot for growing plants shown in Fig. 1.
It is a perspective view showing a cultivation state arranged on a shelf board. 1... Pot for growing plants, 1a... Bottom plate, 1b...
Annular peripheral wall, 1c... outer peripheral surface, 2... far infrared absorbing film, 3... soil, 4... seedlings, 5... shelf for plant growth.
Claims (1)
面に遠赤外線吸収膜を設けたことを特徴とする
植物育成用鉢。 (2) 遠赤外線吸収膜が、表面に多数の凹凸を有す
るものである実用新案登録請求の範囲第(1)項に
記載の植物育成用鉢。[Claims for Utility Model Registration] (1) A pot for growing plants, characterized in that it is a cylindrical synthetic resin pot with a bottom and a far-infrared absorbing film is provided on the outer peripheral surface of the peripheral wall. (2) The pot for growing plants according to claim 1, wherein the far-infrared absorbing film has many irregularities on its surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14951386U JPH0420202Y2 (en) | 1986-10-01 | 1986-10-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14951386U JPH0420202Y2 (en) | 1986-10-01 | 1986-10-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6355850U JPS6355850U (en) | 1988-04-14 |
| JPH0420202Y2 true JPH0420202Y2 (en) | 1992-05-08 |
Family
ID=31064791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14951386U Expired JPH0420202Y2 (en) | 1986-10-01 | 1986-10-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0420202Y2 (en) |
-
1986
- 1986-10-01 JP JP14951386U patent/JPH0420202Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6355850U (en) | 1988-04-14 |
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