JPH04193956A - Method for etching polyimide resin - Google Patents

Method for etching polyimide resin

Info

Publication number
JPH04193956A
JPH04193956A JP32702590A JP32702590A JPH04193956A JP H04193956 A JPH04193956 A JP H04193956A JP 32702590 A JP32702590 A JP 32702590A JP 32702590 A JP32702590 A JP 32702590A JP H04193956 A JPH04193956 A JP H04193956A
Authority
JP
Japan
Prior art keywords
etching
polyimide resin
plating
copper
electroless plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32702590A
Other languages
Japanese (ja)
Inventor
Hidenori Kato
英規 加藤
Shuichi Ogasawara
修一 小笠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP32702590A priority Critical patent/JPH04193956A/en
Publication of JPH04193956A publication Critical patent/JPH04193956A/en
Pending legal-status Critical Current

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  • Manufacturing Of Printed Wiring (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Chemically Coating (AREA)

Abstract

PURPOSE:To improve workability and work environment by exerting etching to the surface of a polyimide resin by using an etchant consisting of a strongly oxidizing salt. CONSTITUTION:In a plating treatment exerted at the time of applying electroless plating to a polyimide resin, etching is applied to the polyimide resin by using an etchant consisting of a strongly oxidizing salt to make it hydrophilic. By this method, etching treatment can be applied safely under superior work environment to the polyimide resin which is difficult to etch with superior workability without adversely affecting a human body, and further, the adhesive strength of the electroless plating film activated after the above treatment can be improved. As a result, a copper polyimide substrate prepared by applying the above plating film can sufficiently withstand practical use as a substrate for packaging for FPC and TAB.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、ポリイミド樹脂に無電解めっきを形成する際
に行なわれるメツキ前処理法におけるポリイミド樹脂の
エツチング法に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for etching polyimide resin in a plating pretreatment method performed when forming electroless plating on polyimide resin.

(従来の技術) ポリイミド樹脂は優れた耐熱性を有しており、また機械
的、電気的、化学的特性においても他のプラスチック材
料と同等以上の性能を有しているため、電気機器等の素
材として広く用いられている。そこで、フレキシブルプ
リント回路(FPC>や、テープ自動ボンディング(T
AB )実装等はこのポリイミドフィルムの上胴被膜が
形成された銅ポリイミド基板にフォトエツチングを施し
て製造されているが、従来−膜面には、このようなFP
CやTAB用の素材となる銅ポリイミド基板はポリイミ
ド樹脂フィルムと銅箔とを接着剤を用いて貼り合せるラ
ミネート法が採用されていた。
(Prior technology) Polyimide resin has excellent heat resistance and mechanical, electrical, and chemical properties that are equal to or better than other plastic materials, so it is used in electrical equipment, etc. Widely used as a material. Therefore, flexible printed circuits (FPC) and automatic tape bonding (T
AB) Mounting etc. are manufactured by photo-etching a copper polyimide substrate on which an upper body coating of this polyimide film is formed.
Copper polyimide substrates, which are the raw material for C and TAB, have been manufactured using a lamination method in which a polyimide resin film and copper foil are bonded together using an adhesive.

しかし、このラミネート法によるときは、これに用いる
接着剤の熱的特性が適当でなく耐熱性が十分でないため
に、ボンディングに際して発生する熱衝撃によって銅箔
が樹脂部から剥離したり、また接着剤の耐薬品性が低い
ために、銅被膜のエツチング処理を行なう場合にイオン
吸着が起って形成される回路間隔が特に狭い場合には回
路の絶縁不良を起す恐れがあった。
However, when using this lamination method, the thermal properties of the adhesive used are not suitable and the heat resistance is not sufficient, so the copper foil may peel off from the resin part due to the thermal shock that occurs during bonding, or the adhesive may Due to the low chemical resistance of the copper film, ion adsorption may occur during etching of the copper film, resulting in poor insulation of the circuit if the gaps between the circuits formed are particularly narrow.

この欠点を解消するなめにポリイミド樹脂に接着剤によ
らずに直接金属被覆層を形成する方法が検討されている
。この方法は他のプラスチック材料においても既に行な
われている方法であり、成る種の溶液によってプラスチ
ック表面をエツチングし、該表面に親水性のエツチング
化成膜を形成したのちに、パラジウム(Pd)、銀(A
g)等の特殊な金属触媒によって材料表面を触媒活性化
し、しかるのち該表面に無電解めっきを施すものである
。この場合において、エツチングによって親水性化され
たポリイミド樹脂表面に適切な厚さで均質な触媒活性化
が行なわれ、これによって無電解めっき被膜がある程度
以上の高い密着強度でポリイミド樹脂表面に被着されて
いることかFPCやTABの製造上重要な要件となる。
In order to overcome this drawback, a method of directly forming a metal coating layer on polyimide resin without using an adhesive is being considered. This method has already been used for other plastic materials, and involves etching the plastic surface with a solution consisting of a variety of materials, forming a hydrophilic etching film on the surface, and then etching palladium (Pd). Silver (A
The surface of the material is catalytically activated using a special metal catalyst such as g), and then electroless plating is applied to the surface. In this case, homogeneous catalyst activation is performed at an appropriate thickness on the polyimide resin surface that has been made hydrophilic by etching, and as a result, the electroless plating film is adhered to the polyimide resin surface with a certain level of high adhesion strength. This is an important requirement for manufacturing FPCs and TABs.

ポリイミド樹脂表面をエツチングする方法としては、ヒ
ドラジン等の還元剤、エチレンシブミン等のアミン化合
物、アルカリ金属水酸化物の水溶液等のアルカリ溶液、
エチルアルコール等の水溶性アルコール類の何れかを単
独で、あるいは2種類以上の混合物を用いて行なう方法
か知られている。しかしながら、これらの薬品を使用し
てエツチングを行なう場合には総じて作業環境が著しく
悪く、また人体に対する毒性も高い。
Methods for etching the polyimide resin surface include reducing agents such as hydrazine, amine compounds such as ethylenesibumine, alkaline solutions such as aqueous solutions of alkali metal hydroxides,
A method is known in which water-soluble alcohols such as ethyl alcohol are used alone or in a mixture of two or more. However, when etching is performed using these chemicals, the working environment is generally extremely poor and the toxicity to the human body is also high.

従って、ポリイミド樹脂表面のエツチングを作業性よく
、且つ人体に悪影響を及ぼさずに行なってしかも爾後の
活性化処理を経て無電解めっきを施した場合に、優れた
被着性のめつき被膜を得ることのできるような均一な親
水性化成膜を形成し得るエツチング処理方法については
未だ確立されていないのが実状である。
Therefore, when etching the surface of a polyimide resin with good workability and without adversely affecting the human body, and then performing electroless plating after a subsequent activation treatment, a plated film with excellent adhesion can be obtained. The reality is that an etching method capable of forming a uniformly hydrophilic chemical film has not yet been established.

(発明が解決しようとする課題〉 本発明は上記の実状に鑑みてなされたものであって、そ
の目的は、ポリイミド樹脂表面に作業性よく且つ人体に
悪影響を及ぼすことなくエツチング処理を行ない、該表
面の均一な親水化を達成できるようなポリイミド樹脂の
エツチング法を提供することにある。
(Problems to be Solved by the Invention) The present invention has been made in view of the above-mentioned circumstances, and its purpose is to perform etching treatment on the surface of polyimide resin with good workability and without adversely affecting the human body. The object of the present invention is to provide a method for etching polyimide resin that can make the surface uniformly hydrophilic.

(課題を解決するための手段) 本発明者等は上記の目的達成のため鋭意検討を重ねた結
果、過マンガン酸塩または次亜塩素酸塩の如き強酸化性
を有する塩、殊にこれらの酸のアルカリ金属塩をエツチ
ング液として使用してポリイミド樹脂表面のエツチング
を行なう場合には、作業環境性よく且つ人体に対する悪
影響もなく、樹脂表面に均一な親水性エツチング化成膜
層を形成させることができ、密着性の高い無電解めっき
層を樹脂表面に被着することができることを見出した。
(Means for Solving the Problems) As a result of intensive studies to achieve the above object, the present inventors have found that salts with strong oxidizing properties such as permanganate or hypochlorite, especially salts such as these When etching the surface of a polyimide resin using an alkali metal salt of an acid as an etching solution, it is possible to form a uniform hydrophilic etching film layer on the resin surface with good working environment and without harmful effects on the human body. It has been found that an electroless plating layer with high adhesion can be applied to the resin surface.

即ち本発明はポリイミド樹脂表面を過マンガン酸塩水溶
液または次亜塩素酸塩溶液の如き、強酸化性を有する塩
からなるエツチング液を用いてエツチングを施すことを
特徴とするものである。
That is, the present invention is characterized in that the surface of the polyimide resin is etched using an etching solution consisting of a strongly oxidizing salt such as an aqueous permanganate solution or a hypochlorite solution.

(作用) 本発明によるときは、エツチング液として使用される過
マンガン酸塩水溶液または次亜塩素酸塩溶液はそれ自体
強い酸化作用を有し、また次亜塩素酸塩溶液の場合にお
いては、エツチング温度において時として熱分解を起こ
すが、熱分解によって遊離する次亜塩素酸もやはり強酸
化性を有しているので、これらのエツチング液によって
ポリイミド樹脂表面をエツチング処理するときは、その
強い酸化作用によってポリイミド樹脂表面に厚さ0、0
1〜0.1μm程度の均一で親水性の高いエツチング化
成層が形成される。従って、これに引き続き行なわれる
触媒活性化処理によって該エツチング処理層中にPdや
ACIのような触媒金属が微細かつ均質に吸着されるた
め、次いで行なわれる無電解めっき処理に際してこれが
核となってめっき金属原子と結合し、ポリイミド樹脂表
面に均一なめつき金属層を形成させることができるので
ある。
(Function) According to the present invention, the permanganate aqueous solution or hypochlorite solution used as the etching solution itself has a strong oxidizing effect, and in the case of the hypochlorite solution, the etching Although thermal decomposition sometimes occurs at high temperatures, the hypochlorous acid liberated by thermal decomposition also has strong oxidizing properties, so when etching the polyimide resin surface with these etching solutions, avoid the strong oxidizing action. The thickness of the polyimide resin surface is 0,0 by
A uniform and highly hydrophilic etching chemical layer of about 1 to 0.1 μm is formed. Therefore, catalyst metals such as Pd and ACI are finely and homogeneously adsorbed in the etched layer by the subsequent catalyst activation treatment, and these serve as the core during the subsequent electroless plating treatment. By combining with metal atoms, it is possible to form a uniformly plated metal layer on the surface of the polyimide resin.

本発明においてポリイミド樹脂表面のエツチンダ液とし
て過マンガン酸塩の水溶液を使用する場合には、エツチ
ング液中の過マンガン酸塩の濃度を0.1m01/u以
上とするのがよい。
In the present invention, when an aqueous solution of permanganate is used as an etching solution for the surface of a polyimide resin, the concentration of permanganate in the etching solution is preferably 0.1 m01/u or more.

過マンガン酸塩の濃度が0.1mol/Ω未満ではエツ
チング能力が低くすぎて、エツチング時間の増加および
液の早期劣化を招くからである。
This is because if the concentration of permanganate is less than 0.1 mol/Ω, the etching ability is too low, leading to an increase in etching time and early deterioration of the solution.

過マンガン酸塩の濃度の上限は使用する過マンガン酸塩
の飽和濃度によって定まり、この飽和濃度は過マンガン
酸塩の種類によって異なるため一概には決められない。
The upper limit of the permanganate concentration is determined by the saturation concentration of the permanganate used, and since this saturation concentration differs depending on the type of permanganate, it cannot be determined unconditionally.

エツチングの温度および時間はエツチングの過不足がな
いように過マンガン酸塩の濃度に応じて適宜設定される
The etching temperature and time are appropriately set according to the concentration of permanganate so that there is no excess or deficiency in etching.

過マンガン酸塩が高濃度の場合または高温度でエツチン
グを行なう場合にはエツチング時間を短かくするが、そ
れでも時として過剰エツチングによってめっき時にめっ
き被膜のムラが起こりやすく、低濃度あるいは低温度で
エツチングを行なう場合には、エツチング不足によるめ
っき被膜の密着度低下や長時間処理を行なうことによる
生産性の低下を招くので、予備実験によって予め好適条
件を求めておくことが推奨される。
When etching is performed at a high concentration of permanganate or at a high temperature, the etching time is shortened, but even so, sometimes excessive etching tends to cause unevenness of the plating film during plating. When carrying out this process, it is recommended to determine suitable conditions in advance through preliminary experiments, since the adhesion of the plating film may be reduced due to insufficient etching, and productivity may be reduced due to long-term processing.

例えば過マンガン酸カリウム0.3m01/Iの水溶液
を用いる場合には液温40〜50℃、エツチング時間5
〜10分程度が適当な処理条件である。使用される過マ
ンガン酸塩は、過マンガン酸カリウムあるいは過マンガ
ン酸ナトリウムが望ましい。その他の過マンガン酸塩の
使用も可能であるが経済性が低い。
For example, when using an aqueous solution of potassium permanganate 0.3 m01/I, the solution temperature is 40 to 50°C and the etching time is 5
Appropriate treatment conditions are approximately 10 minutes. The permanganate used is preferably potassium permanganate or sodium permanganate. Other permanganates can be used, but are less economical.

また、エツチング液として次亜塩素酸塩溶液を用いる場
合には、液中の有効塩素濃度を3%以上とすることが望
ましい。有効塩素濃度3%未満であるときはエツチング
能力が著しく低下し、エツチング時間の増加やこれに伴
う液の早期劣化を招きやすい。
Further, when a hypochlorite solution is used as the etching solution, it is desirable that the effective chlorine concentration in the solution is 3% or more. When the effective chlorine concentration is less than 3%, the etching ability is significantly reduced, which tends to increase the etching time and cause premature deterioration of the solution.

エツチング液に次亜塩素酸塩溶液を使用した場合のエツ
チング処理温度および時間もまたエツチング液中の有効
塩素濃度によって異なり一概に決定できないが、次亜塩
素酸塩溶液は熱によって分解しやすいため処理温度は2
0℃以下に保持することが望ましい。
When using a hypochlorite solution as the etching solution, the etching temperature and time also depend on the available chlorine concentration in the etching solution and cannot be definitively determined, but hypochlorite solutions are easily decomposed by heat, so The temperature is 2
It is desirable to maintain the temperature below 0°C.

使用する次亜塩素酸塩は次亜塩素酸カリウムまたは次亜
塩素酸ナトリウムが望ましい。その他の次亜塩素酸塩を
エツチング液として使用する場合は水溶液となるのでエ
ツチング能力が著しく低下してしまうために得策でない
The hypochlorite used is preferably potassium hypochlorite or sodium hypochlorite. When other hypochlorite salts are used as the etching solution, it is not a good idea because it becomes an aqueous solution and the etching ability is significantly reduced.

このようにして表面に本発明によるエツチング処理を施
したポリイミド樹脂は、常法に従って活性化処理を施し
た後、無電解めっき処理を施すことによって密着強度の
高い均一なめつき金属被膜を形成させることができる。
The polyimide resin whose surface has been subjected to the etching treatment according to the present invention in this way is subjected to an activation treatment according to a conventional method, and then subjected to an electroless plating treatment to form a uniform plated metal film with high adhesion strength. I can do it.

この場合、活性化処理としては通常この種の無電解めっ
き処理において行なわれている公知のキャタライジング
法やアクモレ−ティング法を採用して行なえばよく、さ
らに無電解めっき処理においても従来から一般的に行な
われている銅めっき液を適用して、公知のめつき条件に
よって行なえばよい。
In this case, the activation treatment may be carried out by employing the well-known catalyzing method or acmolating method, which is usually used in this type of electroless plating treatment. The plating may be carried out under known plating conditions by applying a copper plating solution used in

(実施例) 次に本発明の実施例について述べる。(Example) Next, examples of the present invention will be described.

実施例1 東し・デュポン社製xaptpn 200 H型のポリ
イミド樹脂フィルム30 X 30cIn試料の片面を
シールし、0.3mol/llの過マンガン酸カリウム
水溶液に50℃において5分間浸漬した後に水洗して、
奥野製薬社製0PC−80キャタリストMを使用して2
5℃において5分間キャタライジングを行ない、水洗後
奥野製薬社製0PC−555アクセレーターを使用して
25℃において7分間アクセレーテイングを行ない、こ
れを十分に水洗した。
Example 1 One side of a 30 x 30 cIn polyimide resin film made by Toshi DuPont Co., Ltd., XAPTPN 200, was sealed and immersed in a 0.3 mol/ll potassium permanganate aqueous solution at 50°C for 5 minutes, and then washed with water. ,
2 using Okuno Pharmaceutical Co., Ltd. 0PC-80 Catalyst M
Catalyzing was performed at 5° C. for 5 minutes, and after washing with water, acceleration was performed at 25° C. for 7 minutes using an 0PC-555 accelerator manufactured by Okuno Pharmaceutical Co., Ltd., and this was thoroughly washed with water.

以上の前処理工程を経た後、片面に施したシールを除去
し、以下に示す条件にて銅の無電解めっきを行なった。
After the above pretreatment process, the seal applied to one side was removed, and electroless copper plating was performed under the conditions shown below.

CLISO4・5820   : 10g/IEDTA
 −2Na     : 30g/137%HCHO:
 5m4!/1 ジピリジル    :10■/I PEG #1000    : 0.5 g/l!くめ
つき条件〉 温  度     :65°C 撹  拌    :空気 時  間     =5分 pH:12.5 得られた無電解めっき被膜の厚さは0.2μmであり、
めっき被膜に膨れ、剥げ、むら等の欠陥かなく、良好な
外観を呈していた。
CLISO4・5820: 10g/IEDTA
-2Na: 30g/137%HCHO:
5m4! /1 Dipyridyl: 10■/I PEG #1000: 0.5 g/l! Plating conditions> Temperature: 65°C Stirring: Air Time = 5 minutes pH: 12.5 The thickness of the obtained electroless plating film was 0.2 μm,
The plating film had no defects such as blistering, peeling, and unevenness, and had a good appearance.

その後、さらに該基板に電解銅めっき処理を施して厚さ
35μmの銅被膜を形成し、JIS C−6481に定
められた方法によってめっき被膜の密着強度を測定した
ところ1.0kg/anの値が得られた。この値はFP
CやTAB実装用の基板として求められている金属被覆
層の被着強度値を十分満足するものである。
After that, the substrate was further subjected to electrolytic copper plating to form a copper film with a thickness of 35 μm, and the adhesion strength of the plating film was measured by the method specified in JIS C-6481, and the value was 1.0 kg/an. Obtained. This value is FP
This sufficiently satisfies the adhesion strength value of the metal coating layer required for substrates for C and TAB mounting.

実施例2 ポリイミド樹脂のエツチングを0.1mol/uの過マ
ンガン酸カリウム水溶液を使用して、液温70℃におい
て10分間行なった以外は実施例1と同様の手順で銅の
無電解めっきを行なった。得られた無電解めっき被膜の
厚さは0.2μmであり、めっき被膜に膨れ、剥げ、む
ら等の欠陥がなく良好な外観を呈していた。
Example 2 Electroless plating of copper was carried out in the same manner as in Example 1, except that polyimide resin was etched using a 0.1 mol/u potassium permanganate aqueous solution at a temperature of 70°C for 10 minutes. Ta. The thickness of the electroless plated film obtained was 0.2 μm, and the plated film had no defects such as swelling, peeling, or unevenness, and had a good appearance.

その後、さらに該基板に無電解めっき処理を施して厚さ
35μmの銅被膜を形成し、JIS C−6481に定
められた方法によってめっき被膜の密着強度を測定した
ところ1.1kg/CXnの値が得られた。この値はF
PCやTAB実装用の基板として求められている金属被
覆層の被着強度値を十分満足するものである。
After that, the substrate was further subjected to electroless plating to form a copper film with a thickness of 35 μm, and the adhesion strength of the plating film was measured by the method specified in JIS C-6481, and the value was 1.1 kg/CXn. Obtained. This value is F
This sufficiently satisfies the adhesion strength value of the metal coating layer required for PC and TAB mounting substrates.

実施例3 ポリイミド樹脂のエツチングを1.0…01/pの過マ
ンガン酸ナトリウム水溶液を使用し、液温30℃におい
て10分間行なった以外は実施例1と同様の手順で銅の
無電解めっきを行なった。
Example 3 Electroless plating of copper was carried out in the same manner as in Example 1, except that polyimide resin was etched using a 1.0...01/p sodium permanganate aqueous solution at a temperature of 30°C for 10 minutes. I did it.

得られた無電解めっき被膜の厚さは062μmであり、
めっき被膜の膨れ、剥げ、むら等の欠陥がなく良好な外
観を呈していた。
The thickness of the obtained electroless plating film was 062 μm,
The plating film had no defects such as blistering, peeling, or unevenness, and had a good appearance.

その後、さらに該基板に電解銅めっき処理を施して厚さ
35μmの銅被膜を形成し、JIS C−6481に定
められた方法によってめっき被膜の密着強度を測定した
ところ1.1kg/anの値が得られた。この値はFP
CやTAB実装用の基板として求められている金属被覆
層の被着強度値を十分満足するものである。
Thereafter, the substrate was further subjected to electrolytic copper plating to form a copper film with a thickness of 35 μm, and the adhesion strength of the plating film was measured by the method specified in JIS C-6481, and the value was 1.1 kg/an. Obtained. This value is FP
This sufficiently satisfies the adhesion strength value of the metal coating layer required for substrates for C and TAB mounting.

比較例1 ポリイミド樹脂のエツチングを0.05 mol/ρの
過マンガン酸カリウム水溶液を使用し、液温70℃にお
いて1時間行なった以外は実施例1と同様の手順で銅の
無電解めっきを行なったところ、得られた無電解銅めっ
きの一部分に膨れによる欠陥が生じていた。
Comparative Example 1 Electroless plating of copper was performed in the same manner as in Example 1, except that polyimide resin was etched using a 0.05 mol/ρ potassium permanganate aqueous solution at a solution temperature of 70°C for 1 hour. As a result, defects due to blistering had occurred in a portion of the electroless copper plating obtained.

実施例4 ポリイミド樹脂のエツチングを有効塩素5%を含む次亜
塩素酸ナトリウム溶液を使用し、液温5℃において10
分間行なった以外は実施例1と同様の手順で銅の無電解
めっきを行なった。
Example 4 Polyimide resin was etched using a sodium hypochlorite solution containing 5% available chlorine at a temperature of 5°C.
Electroless plating of copper was carried out in the same manner as in Example 1, except that the plating was carried out for a minute.

得られた無電解めっき被膜の厚さは0.2μmであり、
めっき被膜に膨れ、剥げ、むら等の欠陥がなく良好な外
観を呈していた。
The thickness of the obtained electroless plating film was 0.2 μm,
The plating film had no defects such as blistering, peeling, and unevenness, and had a good appearance.

その後、さらに該基板に電解銅めっき処理を施して厚さ
35μmの銅被膜を形成し、IS C−6481に定め
られた方法によってめっき被膜の密着強度を測定したと
ころ1.1kg/cxnの値が得られた。この値はFP
CやTAB実装用の基板として求められている金属被覆
層の被着強度値を十分満足するものである。
After that, the substrate was further subjected to electrolytic copper plating to form a copper film with a thickness of 35 μm, and the adhesion strength of the plating film was measured by the method specified in ISC-6481, and the value was 1.1 kg/cxn. Obtained. This value is FP
This sufficiently satisfies the adhesion strength value of the metal coating layer required for substrates for C and TAB mounting.

実施例5 ポリイミド樹脂のエツチングを有効塩素6%を含む次亜
塩素酸カリウム溶液を使用して、液温10℃において1
0分間行なった以外は実施例1と同様の手順で銅の無電
解めっきを行なった。
Example 5 Polyimide resin was etched using a potassium hypochlorite solution containing 6% available chlorine at a temperature of 10°C.
Electroless plating of copper was performed in the same manner as in Example 1 except that the plating was performed for 0 minutes.

得られた無電解めっき被膜の厚さは0.2μmであり、
めっき被膜に膨れ、剥げ、むら等の欠陥がなく良好な外
観を呈していた。
The thickness of the obtained electroless plating film was 0.2 μm,
The plating film had no defects such as blistering, peeling, and unevenness, and had a good appearance.

その後、さらに該基板に電解銅めっき処理を施して厚さ
35μmの銅被膜を形成し、JIS、 C−6481に
定められた方法によってめっき被膜の密着強度を測定し
たところ1.0kg/canの値が得られた。この値は
FPC’i’TAB実装用の基板として求められている
金属被覆層の被着強度値を十分満足するものである。
Thereafter, the substrate was further subjected to electrolytic copper plating to form a copper film with a thickness of 35 μm, and the adhesion strength of the plating film was measured according to the method specified in JIS C-6481, and the value was 1.0 kg/can. was gotten. This value sufficiently satisfies the adhesion strength value of the metal coating layer required for a board for FPC'i'TAB mounting.

実施例6 ポリイミド樹脂のエツチングを有効塩素3%を含む次亜
塩素酸ナトリウム溶液を使用して、液温5℃において2
0分間行なった以外は実施例1と同様の手順で銅の無電
解めっきを行なった。
Example 6 Polyimide resin was etched using a sodium hypochlorite solution containing 3% available chlorine at a temperature of 5°C.
Electroless plating of copper was performed in the same manner as in Example 1 except that the plating was performed for 0 minutes.

得られた無電解めっき被膜の厚さは0.2μmであり、
めっき被膜に膨れ、剥げ、むら等の欠陥がなく良好な外
観を呈していた。
The thickness of the obtained electroless plating film was 0.2 μm,
The plating film had no defects such as blistering, peeling, and unevenness, and had a good appearance.

その後、さらに該基板に電解銅めっき処理を施して厚さ
35μmの銅被膜を形成し、JIS C−6481に定
められた方法によってめっき被膜の密着強度を測定した
ところ1.1kg/anの値が得られた。この値はFP
CやTAB実装用の基板として求められている金属被覆
層の被着強度値を十分満足するものである。
Thereafter, the substrate was further subjected to electrolytic copper plating to form a copper film with a thickness of 35 μm, and the adhesion strength of the plating film was measured by the method specified in JIS C-6481, and the value was 1.1 kg/an. Obtained. This value is FP
This sufficiently satisfies the adhesion strength value of the metal coating layer required for substrates for C and TAB mounting.

比較例2 ポリイミド樹脂のエツチングを有効塩素2%を含む次亜
塩素酸ナトリウム溶液を使用し、液温5℃において1時
間行なった以外は実施例1と同様の手順で銅の無電解め
っきを行なったところ、得られた無電解銅めっきの一部
分に膨れによる欠陥が生じていた。
Comparative Example 2 Electroless plating of copper was performed in the same manner as in Example 1, except that polyimide resin was etched using a sodium hypochlorite solution containing 2% available chlorine at a solution temperature of 5°C for 1 hour. As a result, defects due to blistering had occurred in a portion of the electroless copper plating obtained.

(発明の効果) 以上述べたように、本発明によるときは従来無電解めっ
き処理を施すに際して行なわれる前処理において、作業
性よく且つ人体に悪影響を及ぼさずにエツチング処理を
行なうことが困難であったポリイミド樹脂に作業環境よ
く且つ安全にエツチング処理を施すことができ、しかも
爾後の活性化処理を経て施された無電解めっき被膜の密
着強度も高いので、これを施して得られた銅ポリイミド
基板はFPCやTABの実装用基板として十分に実用に
耐えられるものが得られ、その効果は大きい。
(Effects of the Invention) As described above, according to the present invention, it has been difficult to perform etching treatment with good workability and without adversely affecting the human body in the pretreatment performed when performing electroless plating treatment. Etching can be carried out safely in a good working environment on polyimide resin, and the adhesion strength of the electroless plating film applied after subsequent activation treatment is also high, so the copper polyimide substrate obtained by etching can be It is possible to obtain a board that can be used in practical use as a mounting board for FPC or TAB, and its effects are great.

特許出願人  住友金属鉱山株式会社Patent applicant: Sumitomo Metal Mining Co., Ltd.

Claims (5)

【特許請求の範囲】[Claims] (1)ポリイミド樹脂の表面を強酸化性を有する塩より
なるエッチング液を用いてエッチングすることにより親
水化することを特徴とするポリイミド樹脂のエッチング
法。
(1) A method for etching a polyimide resin, which is characterized in that the surface of the polyimide resin is made hydrophilic by etching it with an etching solution made of a salt having strong oxidizing properties.
(2)強酸化性を有する塩よりなるエッチング液は過マ
ンガン酸塩を0.1mol/l以上含有する水溶液であ
る請求項1記載のポリイミド樹脂のエッチング法。
(2) The method for etching a polyimide resin according to claim 1, wherein the etching solution made of a strongly oxidizing salt is an aqueous solution containing 0.1 mol/l or more of permanganate.
(3)過マンガン酸塩は過マンガン酸ナトリウムまたは
過マンガン酸カリウムである請求項2記載のポリイミド
樹脂のエッチング法。
(3) The method for etching polyimide resin according to claim 2, wherein the permanganate is sodium permanganate or potassium permanganate.
(4)強酸化性を有する塩よりなるエッチング液は有効
塩素を3%以上含有する次亜塩素酸塩溶液である請求項
1記載のポリイミド樹脂のエッチング法。
(4) The method for etching polyimide resin according to claim 1, wherein the etching solution made of a salt having strong oxidizing properties is a hypochlorite solution containing 3% or more of available chlorine.
(5)次亜塩素酸塩は次亜塩素酸ナトリウムまたは次亜
塩素酸カリウムである請求項4記載のポリイミド樹脂の
エッチング法。
(5) The method for etching polyimide resin according to claim 4, wherein the hypochlorite is sodium hypochlorite or potassium hypochlorite.
JP32702590A 1990-11-28 1990-11-28 Method for etching polyimide resin Pending JPH04193956A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32702590A JPH04193956A (en) 1990-11-28 1990-11-28 Method for etching polyimide resin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32702590A JPH04193956A (en) 1990-11-28 1990-11-28 Method for etching polyimide resin

Publications (1)

Publication Number Publication Date
JPH04193956A true JPH04193956A (en) 1992-07-14

Family

ID=18194470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32702590A Pending JPH04193956A (en) 1990-11-28 1990-11-28 Method for etching polyimide resin

Country Status (1)

Country Link
JP (1) JPH04193956A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1254768A3 (en) * 2001-05-03 2003-09-03 Heidelberger Druckmaschinen Aktiengesellschaft Imaging and erasure of a printing form made from a polymer having imide groups
WO2006129526A1 (en) * 2005-06-03 2006-12-07 Mitsui Chemicals, Inc. Polyimide film, polyimide metal laminate and process for producing the same
JP2008004960A (en) * 2003-12-05 2008-01-10 Mitsui Mining & Smelting Co Ltd Printed wiring board and circuit device
JP2010540345A (en) * 2007-10-05 2010-12-24 ザ・ボーイング・カンパニー Method and apparatus for lightning protection of composite structures
WO2012063768A1 (en) * 2010-11-10 2012-05-18 Dic株式会社 Method for forming functional pattern, and functional device
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1254768A3 (en) * 2001-05-03 2003-09-03 Heidelberger Druckmaschinen Aktiengesellschaft Imaging and erasure of a printing form made from a polymer having imide groups
US6919165B2 (en) 2001-05-03 2005-07-19 Heidelberger Druckmaschinen Ag Imaging and erasing of a printing form made of polymer material containing imide groups
CZ300557B6 (en) * 2001-05-03 2009-06-17 Heidelberger Druckmaschinen Ag Process for producing a structure from hydrophilic and hydrophobic areas of a surface for printing form printing and printing form per se
JP2008004960A (en) * 2003-12-05 2008-01-10 Mitsui Mining & Smelting Co Ltd Printed wiring board and circuit device
JP4709813B2 (en) * 2003-12-05 2011-06-29 三井金属鉱業株式会社 Printed wiring board, circuit device, and printed wiring board manufacturing method
WO2006129526A1 (en) * 2005-06-03 2006-12-07 Mitsui Chemicals, Inc. Polyimide film, polyimide metal laminate and process for producing the same
JP2010540345A (en) * 2007-10-05 2010-12-24 ザ・ボーイング・カンパニー Method and apparatus for lightning protection of composite structures
WO2012063768A1 (en) * 2010-11-10 2012-05-18 Dic株式会社 Method for forming functional pattern, and functional device
WO2012063763A1 (en) * 2010-11-10 2012-05-18 Dic株式会社 Method for forming functional pattern, and functional element
JP2012102366A (en) * 2010-11-10 2012-05-31 Koichi Kugimiya Method for forming functional pattern, and functional element
JP2012102365A (en) * 2010-11-10 2012-05-31 Koichi Kugimiya Method for forming functional pattern, and functional device
CN103210118A (en) * 2010-11-10 2013-07-17 钉宫公一 Method for forming functional pattern, and functional element

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