JPH04193466A - Polishing method for sedimentary film for electronic photography and manufacture of photosensitive body for electronic photography - Google Patents

Abstract

PURPOSE:To uniformly polish without missing the head of a spherical projection even if a foreign matter is developed abnormally as a spherical projection with its sticking to the surface at the sedimentary film forming time of the sedimentary film for an electronic photography, by forming a resin layer on the sedimentary film prior to polishing the sedimentary film. CONSTITUTION:A sedimentary film 2 for an electronic photography composed of a noncrystalline substance which makes a silicon atom as the host formed on a substrate 1 with a microwave plasma CVD method, is polished by a polishing tape 108. In this case, a resin layer 3 is formed on the sedimentary film 2 prior to polishing this sedimentary film 2. It can thus by polished without missing the spherical projection 404 and can be polished without giving the damage of a flaw, etc., on the sedimentary film 2 surface.

Description

Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a method of polishing the surface of a workpiece having a rotating body shape such as a cylinder while rotating it, and relates to a method for polishing the surface of a workpiece having a rotating body shape such as a cylinder, etc. The present invention relates to a polishing method suitable for polishing the surface of a deposited film, which requires uniform surface polishing, without causing damage such as scratches.

[Conventional technology]

Yoto: Amorphous deposited films such as amorphous silicon compensated with non-single crystal deposits (e.g., hydrogen and/or halogens (e.g., chlorine, etc.)) have been proposed as element components for use in electrophotographic photoreceptors, but some of them have been put into practical use. It is attached to.

Methods for forming such deposited films include the Yoto sputtering method, a method of decomposing raw material gas with heat (thermal CVD method),
Many methods are known, including a method of decomposing raw material gas using light (photo-CVD method) and a method of decomposing fluorine gas using plasma (plasma CVD method). Among them, plasma CVD method,
That is, amorphous silicon deposition for electrophotography is a method in which a raw material gas is decomposed by direct current, high frequency, microwave glow discharge, etc., and a thin film is formed on a substrate such as glass, quartz, heat-resistant synthetic resin film, stainless steel, aluminum, etc. Film Formation Method Practical use is currently very advanced, and various devices have been proposed for this purpose. Special Mi
In recent years, the plasma CVD method using microwave glow discharge decomposition, that is, microwave plasma C, has been used as a deposited film forming method.
The VD method is also attracting attention from an industrial perspective.

Microwave plasma CVD method IL has the advantage of higher deposition rate and higher raw material gas utilization efficiency than other methods. One example of microwave plasma CVD technology that takes advantage of these advantages is U.S. Pat. No. 4,504.
It is described in No. 518.

The technology described in the patent 1i, 0. The method is to obtain a high-quality deposited film at a high deposition rate using the microwave plasma CVD method using a low pressure of 1 Torr or less.A technology for improving the utilization efficiency of raw material gas by the microwave plasma CVD method was published in 1983. It is described in the publication No.-186849. The technology described in this publication is summarized as follows: A base body is arranged to surround a means for introducing microwave energy to form an internal chamber (i.e., a discharge space), thereby greatly increasing the raw material gas utilization efficiency. It is something.

Additionally, Japanese Patent Laid-Open No. 61-283116 discloses an improved microwave technique for manufacturing semiconductor components. In other words, the publication discloses that an electrode (bias electrode) is installed in the discharge space to control the plasma potential, and a desired voltage (bias voltage) is applied to this bias electrode to deposit a film while controlling ion bombardment on the deposited film. Discloses a technique for improving the characteristics of a deposited film by performing the following steps.

These conventional techniques make relatively thick photoconductive materials
It has become possible to manufacture the electrophotographic photoreceptor with a relatively high deposition rate and raw material gas utilization efficiency. This is carried out by a deposited film forming apparatus for producing an electrophotographic photoreceptor, which is shown in a cross-sectional view.

In FIGS. 2a and 2, 201 is a reaction vessel, which has a vacuum-tight structure. In addition, it is a microwave introduction dielectric window made of a material (for example, quartz glass, alumina ceramics, etc.) that can efficiently transmit microwave power into the reaction vessel and maintain vacuum tightness. A waveguide 203 transmits microwave power, and consists of a rectangular portion extending from the microwave power source to the vicinity of the reaction container, and a cylindrical portion inserted into the reaction container. The waveguide 203 is a stub tuner (not shown)
, connected to a microwave power source (not shown) along with an isolator (not shown).

The dielectric window 202 is hermetically sealed to the inner wall of the cylindrical portion of the waveguide 203 in order to maintain the atmosphere within the reaction vessel. Reference numeral 204 is an exhaust pipe having one end connected to the inside of the reaction vessel 20i and the other end communicating with an exhaust system (not shown). 2
06 indicates a discharge space surrounded by the base 1. power supply 21
1 is a DC power supply (bias power supply) for applying a DC voltage to the bias electrode 212, and is electrically connected to the electrode 212.

Manufacturing of a conventional electrophotographic photoreceptor by a conventional method of manufacturing an electrophotographic photoreceptor using such a deposited film forming apparatus is performed as follows. First, the reaction vessel 201 is evacuated by a vacuum pump (not shown) through the exhaust pipe 204, and the pressure inside the reaction vessel 201 is adjusted to 1X10-7 Torr or less. Next, the temperature of the substrate 1 is heated and maintained at a temperature of 200° C. or higher and 300° C. or lower using the heater 207. Therefore, a raw material gas such as silane gas or hydrogen gas is introduced into the reaction vessel 201 via a gas introducing means (not shown). At the same time, the microwave power source 208 generates frequency 2.
．． Microwaves of 45 GHz are generated and introduced into the reaction vessel 201 through the waveguide 203 and the dielectric window 202 . Furthermore, a bias voltage is applied to the substrate 1 to the bias electrode 212 by a bias power supply 211 electrically connected to the bias electrode 212 in the discharge space 206 . Thus, in the discharge space 206 surrounded by the substrate 1, the raw material gas is excited by the microwave energy and dissociated, and is constantly bombarded with ions onto the substrate 1 by the electric field between the bias electrode 211 and the substrate 1. A deposited film is formed on the surface of the substrate 1. At this time, the rotating shaft 209 on which the substrate 1 is installed is rotated by the motor 210, and the substrate 1 is rotated around the central axis in the substrate generatrix direction, thereby forming a deposited film uniformly over the entire circumference of the substrate 1. .

[Problem to be solved by the invention]

Amorphous silicon 1 Amorphous silicon has a higher surface hardness than other photoreceptors, so a blade-type cleaning method with high cleaning performance is suitable.An elastic rubber blade is widely used for contact methods such as one-way counter contact. However, in such a blade-type cleaning method, due to the unevenness of the amorphous silicon surface,
When used for a long period of time, the edge surface of the blade is damaged, resulting in poor cleaning in the form of black streaks on the image.As a result of observing the cause of the unevenness on the surface of the amorphous silicon, we found that the damaged part of the blade Approximately circular protrusions (spherical protrusions) were observed on the surface of the amorphous silicon corresponding to the above. When the deposited film in this area was cut out along with the substrate and the cross section was observed under a microscope, there were also 1 protrusions in the vicinity of the substrate. μ
It was found that there was a foreign object with a size of several tens of micrometers, and that abnormal columnar or inverted conical growth started toward the surface using this foreign object as a nucleus.These spherical protrusions are thought to occur by the following mechanism. Conceivable. When a foreign object such as a fragment of a deposited film gets on the substrate or a normal deposited film, the potential in the plasma at that part changes, so the active species generated or transported in the nearby plasma space are different. come. In addition, such foreign substances inhibit the movement of active species on the surface, resulting in different surface reactions during the formation of deposited films. Therefore, in the conventional electrophotographic manufacturing method, the portion of the deposited film that has grown on the foreign matter has different properties from other normal portions, resulting in a film that is insufficient electrophotographically (particularly with low dark resistance). In this way, the spherical protrusion, which has a film quality different from that of the normal part, has weak adhesion to the normal part and is easily broken off, and easily becomes a depression on the surface of the amorphous silicon.

This concavity is also one of the causes of damage to the edge of the cleaning blade. Generally, the height of the convex portion is 1 to 30μ
m, and the recessed portion is approximately 1 to 30 μm.

Furthermore, the film properties of the spherical protrusion are different from those of the normal part, and the film has a small dark resistance. When a deposited film for electrophotography is actually used in a copying machine, the surface of the deposited film for electrophotography is uniformly charged with corona using a charger, and a toner image is created by the Coulomb force of the surface electrification. However, the surface charge around the spherical protrusion passes through the small dark resistance area mentioned above and quickly escapes to the substrate.
It cannot attract toner, and in an entirely black image, an image defect appears as a white dot (referred to as a white dot) corresponding to the position of the spherical protrusion, degrading the image quality of the tag. The phenomenon of white spots mentioned above is caused by the inclusion of carbon in the deposited film, which causes the dark resistance of the spherical protrusions to become slightly larger, making the film quality closer to that of a normal part, increasing the charge retention ability and making it difficult for white spots to appear. However, it has not been investigated yet, and it was found that polishing the head of the spherical protrusion does not change the charge retention ability, which is about the size of a white dot. Therefore, only the head of the spherical protrusion was polished to make it flat. Therefore, many methods were considered to polish the head of the spherical protrusion, but since the spherical protrusion is easily chipped, and is brittle and easily damaged, The surface of the amorphous silicon may be damaged.Therefore, the polishing conditions for the spherical protrusions are limited to the pressure of the polishing member, the polishing speed, the polishing time, etc. in order to prevent the spherical protrusions from being chipped. There was a need for a polishing method that would solve the problems.The present invention solves the above problems - it is possible to polish without missing the spherical protrusions, and polishing can be performed without causing damage such as scratches to the surface of the deposited film. It is an object of the present invention to provide a method for polishing a deposited film that is possible and can be carried out under a wide range of polishing conditions. Another object of the present invention is to provide a method for manufacturing an electrophotographic photosensitive drum that does not cause defects due to polishing.

[Means to solve the problem]

Invention 1 In a method for polishing a deposited film for electrophotography made of a non-single crystal substance with silicon atoms as a matrix formed on a substrate by microwave plasma CVD method, before polishing the deposited film, This is a method of polishing an electrophotographic deposited film forming a resin layer.

The present invention also provides a method for forming an electrophotographic deposited film made of a non-single-crystalline silicon atom on a substrate by microwave plasma CVD, a method for forming a resin layer on the deposited film, and the resin. This is a method for manufacturing an electrophotographic photoreceptor, which includes a step of polishing a layer and a deposited film.

According to the present invention, an electrophotographic deposited film can be polished well, and an excellent electrophotographic photoreceptor can be manufactured.

As the substrate, any known substrate used in electrophotographic photoreceptors can be used without particular limitation.

The shape of the base body to which the present invention can be applied is preferably a rotating body shape, particularly a cylindrical shape.

The deposited film formed on the substrate can also be formed by a known non-single crystal film using silicon atoms as a matrix, or by a microwave plasma CVD method. It is preferable that the electrophotographic deposited film contains carbon atoms.

Suitable resins used for the resin layer include acrylic resin, polyester resin, acrylated urethane resin, urethane resin, and other resins.

Characteristics of resin 1 JIS K 72 Otori AST lock D78
Rockwell hardness defined as 5, Rockwell R9
0 to 120, impact strength (isot notch) defined by ASTM D 256, 5.0 kgcm/cm or more, water absorption rate defined by ASTM D570, 0.1
% or less is preferable.

The thickness of the resin layer is preferably 1 μm to 50 μm, more preferably 10 μm to 30 μm.

There are no particular restrictions on the resin application method, but dip coating methods are recommended.
A method that can form a resin layer of uniform thickness is preferred.

There are no particular restrictions on the method of polishing the resin layer and the deposited film.The cylindrical substrate on which the deposited film for electrophotography and the resin layer are formed is rotated around its center using a force τ, and the cylindrical substrate is polished on the curved surface. It is preferable to carry out polishing by sending the polishing member at a speed different from the circumferential speed of the cylindrical base while bringing the members into contact with each other. It is more preferable to feed the polishing member in the forward direction with respect to the rotational direction of the cylindrical base. It is also preferable that the polishing member is arranged parallel to the generatrix direction of the cylindrical substrate. The rotational speed of the cylindrical substrate is preferably 50 to 6
00mm/see, more preferably 200-40
0mm/see, and the feed rate of the polishing member is preferably 5 to 100mm+/win, more preferably 4
It is 0 to 60 mm/a+in.

By the way, as conventional techniques other than the micro plasma CVD method, Japanese Patent Laid-Open No. 5.6-62254 and Japanese Patent Laid-open No. 57
No. 119356 discloses a technique for improving electrophotographic characteristics by incorporating carbon atoms into a deposited film of an electrophotographic photoreceptor mainly composed of amorphous silicon. However, these publications do not mention cleaning failures caused by spherical protrusions, and furthermore, there is no mention of polishing the heads of the spherical protrusions on the surface after forming a deposited film.

Also, JP-A-62-84965 and JP-A-62-18
No. 8665 discloses a technique for correcting film thickness unevenness by polishing the surface of an electrophotographic photoreceptor. Also,
JP-A-63-311259 discloses a technique for preventing image blurring by smoothing the roughness of the surface. However, these publications do not at all suggest a relationship between poor cleaning and surface polishing.

〔Example〕

Hereinafter, the effects of the present invention will be specifically explained using experimental examples.The present invention is not limited to these in any way.

Example 1 After an amorphous silicon film was deposited and formed by microwave plasma CVD, the surface of the amorphous silicon film was coated with the resin of the present invention, and then a polishing process was performed for evaluation. A three-layer structure (charge injection blocking layer 2a, photoconductive layer 2 and surface protective layer 2c) shown in FIG.
) was formed on the aluminum substrate 1.

After forming a deposited film on an aluminum substrate, a resin layer is uniformly formed on the circumferential surface of the substrate by dip coating using the coating device shown in FIG. 3. Referring to FIG. I will explain.

The resin 303 in the coating pot 307 is connected to the stirring motor 30.
The mixture is stirred by a stirrer 304 rotated by a rotor 5.

An amorphous silicon photoreceptor (a deposited film formed on a cylindrical base) 5 is placed on a cylinder 306 by a clamp 3.
Dip the fixed tongue into liquid resin 303 by 02 and then 12
0mm/s eTable 1 (margins below) Rising at a speed of C Amorphous silicon drum 301
Form a resin layer on the surface.

In this example, 100 parts of finely ground PTFE resin (trade name: Lublon L2, manufactured by Daikin Industries, Ltd.) and 100 parts of chloride-vinyl acetate copolymer (trade name: VMCH, manufactured by UCC) were adjusted to a viscosity of 240 cps (centipoise) using a methyl ethyl ketone solvent. Using diluted liquid resin, 120mm/min
The coating was carried out by dip coating at a speed of The polishing unit 102 in the apparatus main body 101 is raised upward and fixed with a clamp 103. An electrophotographic photoreceptor 5 consisting of a cylindrical substrate on which a deposited film and a resin layer have been formed is combined with a support 104 and fixed to a shaft 106. Next, the clamp 103 is loosened, and the polishing unit 102 is lowered downward by a pressure roller 107. The polishing tape 108 is brought into pressure contact with the electrophotographic photoreceptor 5.The polishing tape 108 is a polyester film coated with silicon carbide powder having an average particle size of 8 μm.The pressure roller 107 has a surface made of urethane rubber (JIS hardness
At this time, the spring 1 for pressure difference is
09 was adjusted so that the linear pressure for pressing the abrasive tape 108 onto the electrophotographic photoreceptor 105 via the pressure roller 107 was 40 g/cm, and the contact (hereinafter referred to as "nip width") was 0.5 mm. .

Next - Rotate the motors 110 and 111 with variable rotation speed. Polishing has started. The feed speed of the polishing tape 108 is 5.
0 mm/min, and the rotational speed of the electrophotographic photoreceptor 5, which is the member to be polished, was 300 mm/sec in peripheral speed.
Polishing is performed based on the difference between the feeding speed of the polishing tape 108 and the rotational speed of the electrophotographic photoreceptor 5.

The polishing process was completed by polishing for 30 minutes under the above conditions.

Although the polishing process is not particularly limited, a polishing method using a polishing tape coated with an abrasive is preferred.

Preferred abrasives include silica (S i O2),
There are fine powders of alumina (A203), iron oxide (Fe2rs), silicon carbide (SiC), carbon nitride (CsNa), cerium oxide (CaO), and the like. The average particle size of the abrasive is 1. If the average particle size is too small, the polishing speed will decrease and the polishing time will actually increase. It also affects the parts of Specifically, the number is 1μm or more,
The thickness is preferably 20 μm or less.

The base material on which the fine abrasive powder is applied is preferably in the form of a film, such as polyamide, polyester, polyurethane, polyolefin, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyfluoroethylene, polyacrylonitrile, Examples include organic polymers such as polyvinyl alcohol and vinylidene polycyanide, and thin metal paper such as stainless steel. Among these, organic polymer films are most suitable because they are lightweight and strong, can be produced in large quantities at low cost, and are resistant to environmental changes. Specifically, Wrapping tape C-20 manufactured by Fuji Film Co., Ltd.
00, wrapping tape manufactured by Sumitomo 3M Co., Ltd., and the like.

The pressure roller used in the polishing device may be made of any material (for example, neoprene rubber, silicone rubber, etc. according to JIS standards) (with an S hardness of 40 to 60.

) If the pressure roller is harder than necessary, scratches from the polishing tape will occur on the electrophotographic photoreceptor, which is the member to be polished.If the pressure roller is softer than necessary, the pressure will not be transmitted to the polishing tape, and the polishing will not actually be done. To avoid slowing down the speed, it is desirable that the surface be coated with a material such as silicone rubber or urethane. More! A roller that can provide an appropriate amount of nip width between the abrasive tape and the electrophotographic photoreceptor depending on the pressing pressure is preferable. At this time, the nip width is desirably 0.001 mm or more and 3 mm or less. The contact pressure is 10 g/c as a linear pressure.
m or more and 1,500 g/cm or less.

A convexly curved pressing member may be used instead of the pressing roller.

As shown in FIGS. 4a and 4b, as the polishing progresses, the spherical protrusion 404 that has grown abnormally from the nucleus 405 is polished together with the resin layer 3.

After the polishing process was completed, the surface and cross section of the amorphous silicon photoreceptor were observed under a microscope. There was no damage to the amorphous silicon surface due to the loss of spherical protrusions due to the polishing process or the opening caused by the loss of the spherical protrusions. As shown in Figure C, resin remains in the concave portion 406 where the deposited film had peeled off from the initial stage, resulting in a flat surface.
Comparative Example 1 In which the resin layer 403 remained in the shape of a slope where the head of the spherical protrusion 404 remained by about 5 μm, a three-layer deposited film was formed in the same manner as in Example 1.
The polishing process was carried out using the polishing apparatus shown in Fig. 1.However, dip coating of the resin was not performed after the deposited film was formed.The amorphous silicon photoconductor that had undergone the polishing process in this way was observed in the same manner as in Example 1.The result was a spherical shape. Example 2 In addition, it was confirmed that the number of four parts increased due to missing protrusions.Founds were also observed in the circumferential direction of the surface of the amorphous silicon photoreceptor due to fragments of missing spherical protrusions.Similar to Example 1, a three-layer structure was used. A deposited film was formed, a resin layer was formed, and polishing was performed. However, the resin layer was different from Example 1.
Light-cured acrylic urethane resin (product name: Sonne,
(manufactured by Kansai Paint Co., Ltd.) was reduced to a viscosity of 12 (Lcps) using a mixed solvent of methyl alcohol/methyl ethyl ketone (31).
After diluting it and applying it by dip coating at a speed of 120 mm/min,
5 using a UV drying device (not shown) with a furnace temperature of 100°C.
Dry for a minute, then irradiate with ultraviolet light for another 30 seconds to create a 30μm
Example 3 The surface and cross section of the amorphous silicon photoreceptor that had undergone the polishing process on which the resin layer was formed were observed under a microscope in the same manner as in Example 1, and the same results as in Example 1 were obtained. a1 Using the deposited film forming apparatus shown in Fig. 2, a microwave plasma CVD method was applied to an aluminum cylindrical substrate 1 with a surface roughness of ○ 15 seconds or less according to the conditions shown in Table 1, as shown in Fig. 7a. A three-layer structure of amorphous silicon is deposited.

In the process of forming the resin layer (Dai) 20 pieces of finely ground PTFE resin (product name: Nilbron L2, manufactured by Daikin Industries, Ltd.) 10 pieces of vinyl chloride-vinyl acetate copolymer (product name: VMCH1, manufactured by UCC Company)
After diluting 0 part with methyl ethyl ketone solvent to a viscosity of 240 cps, dip coating was performed using the dip coating device shown in Figure 3 at a speed of 120 mm/min, and drying was performed at 100° C. for 5 minutes to form a PTFE layer of 30 μm. In addition, in the polishing process, the polishing apparatus shown in FIG. 1 was used in Example 1.
The amorphous silicon photoreceptor that had undergone the polishing process was evaluated for its durability in an electrophotographic device as described below. The NP-7550 was installed in a copying machine modified for experimental purposes, and the process of creating images on 500,000 pieces of transfer paper using the normal copying process was performed continuously.As shown in Figure 6, this copying machine A cleaning device 602 having a separation claw 603 for peeling the transfer paper from the photoreceptor, a cleaning roller 604 for cleaning, and a blade 504 is provided.

The evaluation results are shown in Table 3. Each symbol in the table indicates the following.

1) Blade scratches ○・No damage is observed on the blade edge surface.

△・Small damage is observed on the blade edge surface.

×...Significant damage is observed on the blade edge surface.

2) Poor cleaning ○: Black streaks are observed on the white image.

Δ: 2 to 3 black streaks of several cm are observed on the white image.

×: Long black streaks are observed on the white image.

3) Wear of separation claw O: No wear is observed on the tip of the separation claw.

Δ: Wear is observed at the tip of the separation claw, but it does not affect the image.

× - The tip of the separation claw is worn out, and toner accumulates on the tip of the claw, falls onto the image, and hangs as a black dot on the image.

Comparative Example 2 A deposited film was formed by the microwave plasma CVD method in the same manner as in Example 3, except that no resin layer was formed, and a polishing process of an amorphous silicon photoreceptor was performed.

The amorphous silicon photoreceptor that had undergone the polishing process was evaluated in the same manner as in Example 3. The results are shown in Table 4.

Example 4 A deposited film having a four-layer structure was obtained under the conditions shown in Table 2 by the microwave plasma CVD method using the deposited film forming apparatus shown in FIG. As shown in the figure - Substrate 1 (same as in Example 3) Charge injection blocking layer 2 al Charge transport layer 2b-1, charge generation layer 2b-2 and surface protection layer 2C are formed in this order. Become.

Towards the human heart Soytyl alcohol/methyl ethyl ketone (3°
Dilute the viscosity to 120 cps with the mixed solvent of 1.
After coating the deposited film by dip coating at a speed of 120 mm/min, it was dried for 5 minutes using a UV drying device (not shown) with an oven temperature of 100°C, and then irradiated with ultraviolet light for 30 seconds to form a 30 pm resin layer. The same evaluation as in Example 3 was performed on the amorphous silicon photoreceptor which was further polished in the same manner as in Example 3. The results are shown in Table 5.

(Hereinafter referred to as margins/blanks) Table 2 Table 3 Table 4 Table 5 As a result of the above results, in Examples 3 and 4, not only the blade 5° 4 of the cleaning device 602 shown in FIG. 6 but also the separation claw 603 Even after 500,000 sheets of printing, good images were obtained with no toner droplets due to abrasion of the separating claw 603. However, in Comparative Example 2, the spherical shape shown in FIG. The number of missing protrusions 406 has increased since the beginning of durability, and the photoreceptor surface is damaged by fragments of missing spherical protrusions, and the blade 50
The tip of the separation claw 603 of the cleaning device 602 shown in FIG. , a good image could not be obtained.Although the resin filled the recesses and made it uniform by polishing, a sloped resin layer was formed even on the convex parts with steps of several micrometers, so the rigidity was particularly high. A remarkable effect was observed in Examples 3 and 4 on the wear of the separation claws.In addition, the spherical protrusions are small white (0.1 m in diameter) in the image.
m~2. If the head of the spherical protrusion is missing or half of it is missing (approximately 0 mm), there will be a shape called a dot shadow, which will be several mm to several tens of mm around the white spot due to the bias of the charged corona discharge. The image appears at the same time as the white spot. However, in Examples 3 and 4, no breakage of the spherical protrusions occurred, so there was an unexpected effect that image defects, which are images of the above shape, were drastically reduced.Furthermore, by incorporating carbon into the deposited film, the spherical protrusions were It has been found that the effects of the present invention are further enhanced. [Effects of the Invention] The deposited film for electrophotography of the present invention is polished by a polishing method in which a resin layer is provided on the surface and a polishing step is performed. Do it! Even if foreign matter adheres to the surface of the deposited film for electrophotography and grows abnormally as a spherical protrusion, uniform polishing is possible without missing the head of the spherical protrusion. There is little wear on blades, separation claws, etc. during use, which has a great effect on reducing service costs. In addition, an unexpected effect was obtained in that image defects, which are shaped images that occur when copying in halftone mode, photo mode, etc., were drastically reduced.

[Brief explanation of the drawing]

FIG. 1 shows a polishing apparatus for carrying out the method of polishing an electrophotographic photoreceptor of the present invention. Figure 2 [a> and Figure 2 (b)
1 is a schematic diagram of a deposited film forming apparatus for forming a deposited film on a cylindrical substrate by a microwave plasma CVD method. FIG. 3 is a schematic diagram of the dip coating apparatus used in the examples. FIGS. 4(a) to 4(C) are schematic cross-sectional views of the resin layer and the deposited film to show the polishing situation during the polishing process in the present invention. FIG. 5 is an enlarged view of the vicinity of the missing portion of the spherical protrusion. FIG. 6 is a schematic diagram of a cleaning device in an electrophotographic apparatus for evaluation used in Examples. FIG. 7 is a schematic cross-sectional view of the deposited film formed in the example. Substrate 2. Deposited film 2a: Charge injection blocking layer 2b' Photoconductive layer 2b-1:
Charge transport layer 2b-2: Charge generation layer 2C: Surface protective layer 3: Resin layer 5 Photoreceptor 101, polishing device main body 102, polishing unit 103,
302 Clamp 104 Support 106 Shaft 107 Pressure roller 108 Polishing tape 109° Springs 110, 111, 210, 305 Motor 112: Polishing tape roll 113: Polishing tape take-up roll, 114, 115: Belt 201゛Reaction vessel 202'' Microwave Inlet window 203, waveguide 204. Exhaust pipe 206' discharge space 207. Heater 209' Rotating shaft 2
11 DC power supply 212 Bias electrode 303. Resin paint 304: Stirrer 306: Cylinder 307
: Application pot 403: Resin layer 404 Spherical projection
405: Nucleus of spherical protrusion 406: Missing part of spherical protrusion 504: Blade 602° Cleaning device 603 Difficult to separate type 604' Cleaning roller Patent attorney Canon Co., Ltd. representative Patent attorney Tadashi Kukai

Claims (3)

[Claims] 1. In a method for polishing a deposited film for electrophotography made of a non-single crystal substance with silicon atoms as a matrix formed on a substrate by microwave plasma CVD method, a resin layer is formed on the deposited film before polishing the deposited film. A method for polishing a deposited film for electrophotography. 2. The polishing step is carried out by rotating the base on which the electrophotographic deposited film and the resin layer are formed around its center, and applying polishing at a speed different from the peripheral speed of the base while a polishing member is brought into contact with the circumferential surface of the base. The method of polishing a deposited film for electrophotography according to claim 1, which is carried out by sending a polishing member. 3. A step of forming a deposited film for electrophotography consisting of a non-single crystal substance with silicon atoms as a matrix on a substrate by a microwave plasma CVD method, a step of forming a resin layer on the deposited film, and the resin layer and the deposited film. A method for manufacturing an electrophotographic photoreceptor, comprising the step of polishing.