JPH041907A - Magneto-resistance effect type playback head - Google Patents

Magneto-resistance effect type playback head

Info

Publication number
JPH041907A
JPH041907A JP10406890A JP10406890A JPH041907A JP H041907 A JPH041907 A JP H041907A JP 10406890 A JP10406890 A JP 10406890A JP 10406890 A JP10406890 A JP 10406890A JP H041907 A JPH041907 A JP H041907A
Authority
JP
Japan
Prior art keywords
magneto
magnetic
resistance effect
layer
magnetoresistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10406890A
Other languages
Japanese (ja)
Inventor
Hidekazu Kanda
英一 神田
Hitoshi Kanai
均 金井
Kunio Hata
畑 邦夫
Kazumasa Hosono
細野 和眞
Susumu Aoyama
進 青山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10406890A priority Critical patent/JPH041907A/en
Publication of JPH041907A publication Critical patent/JPH041907A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To prevent the generation of Barkhausen noises and to improve reproducing characteristics by dividing the constituting layer of a magneto-resistance effect element to plural elements of a large aspect ratio by plural magnetic characteristic deteriorated layers. CONSTITUTION:The constituting layer of the magneto-resistance effect element 31 of the magneto-resistance effect type head constituted by disposing a pair of magnetic shield bodies respectively via nonmagnetic insulating layers on both sides of the magneto-resistance effect element 31 joined with drawing-out conductors 14a, 14b at both ends is divided to the plural elements 32a to 32f having the large aspect ratio by the plural magnetic characteristic deteriorated layers 33a to 33e. The magnetostatic energy by the diamagnetic fields generated in the respective divided MR elements 32a to 32f is lowered in this way, by which a monodomain structure is obtd. The generation of the Barkhausen noises is, therefore, prevented and the reproducing characteristics are improved.

Description

【発明の詳細な説明】 〔概 要〕 磁気ディスク装置、或いは磁気テープ装置などに用いら
れる磁気抵抗効果型再生ヘッドに関し、MR素子の素子
長を短くしても、該MR素子内に還流磁区が生じない構
成とし、磁壁移動に起因するバルクハウゼン雑音の発生
を防止して再生特性を向上することを目的とし、 両端に引き出し導体を接合した磁気抵抗効果素子の両側
にそれぞれ非磁性絶縁層を介して一対の磁気シールド体
を配設した磁気抵抗効果型再生ヘッドにおいて、前記磁
気抵抗効果素子の構成層を、複数の磁気特性劣化層によ
りアスペクト比の大きい複数の素子に分割した構成とす
る。
[Detailed Description of the Invention] [Summary] Regarding a magnetoresistive read head used in a magnetic disk device or a magnetic tape device, even if the element length of the MR element is shortened, a reflux magnetic domain is generated in the MR element. With the aim of preventing the occurrence of Barkhausen noise caused by domain wall movement and improving reproduction characteristics, a non-magnetic insulating layer is placed on both sides of the magnetoresistive element, which has conductors connected to both ends. In the magnetoresistive read head in which a pair of magnetic shields are arranged, the constituent layers of the magnetoresistive element are divided into a plurality of elements each having a large aspect ratio by a plurality of magnetic property deterioration layers.

〔産業上の利用分野〕[Industrial application field]

本発明は磁気ディスク装置、或いは磁気テープ装置など
に用いられる磁気抵抗効果型再生ヘッド(以下、MRへ
ンドと略称する)に関するものである。
The present invention relates to a magnetoresistive reproducing head (hereinafter abbreviated as MR head) used in a magnetic disk device, a magnetic tape device, or the like.

近年、コンピュータシステムの高速化、大容量化の要求
に伴い、その外部記憶装置である磁気ディスク装置に対
する高速化、高記録密度化の要求が益々高まっている。
In recent years, with the demand for higher speed and larger capacity of computer systems, there has been an increasing demand for higher speed and higher recording density for magnetic disk devices, which are external storage devices.

従って、再生用の磁気ヘッドとしても記録媒体の速度に
依存することなく高い再生出力が得られるMRヘッドが
注目されている。
Therefore, MR heads are attracting attention as magnetic heads for reproduction because they can provide high reproduction outputs without depending on the speed of the recording medium.

このようなMRヘッドも高トラツク密度化により磁気抵
抗効果素子(以下、MR素子と略称する)のアスペクト
比が小さくなると、素子内の反磁界が強められて該素子
の磁区構造が不安定となり、再生特性が低下する傾向に
ある。このため、そのようなMR素子のアスペクト比が
小さくなっても素子内の反磁界を強めることなく、磁区
構造が安定に維持される再生特性の良いMRヘッドが必
要とされている。
In such an MR head, when the aspect ratio of the magnetoresistive element (hereinafter referred to as MR element) becomes smaller due to higher track density, the demagnetizing field within the element becomes stronger and the magnetic domain structure of the element becomes unstable. Reproduction characteristics tend to deteriorate. Therefore, there is a need for an MR head with good reproduction characteristics that maintains the magnetic domain structure stably without increasing the demagnetizing field within the element even if the aspect ratio of such an MR element becomes small.

〔従来の技術〕[Conventional technology]

従来のMRヘッドは第3図の要部概略斜視図に示すよう
に、両端にCu、Aj!等からなる引出し導体14a、
 14bを接合したNi−FeからなるMR素子13の
両側に、それぞれ5i(h等からなる非磁性絶縁層12
a。
The conventional MR head has Cu, Aj!, on both ends, as shown in the schematic perspective view of the main part in FIG. A drawer conductor 14a consisting of, etc.
Non-magnetic insulating layers 12 made of 5i (h, etc.) are placed on both sides of the MR element 13 made of Ni-Fe to which 14b is bonded.
a.

12bを介してNi−Znフェライト等からなる磁気シ
ルト体11とNi−Fe等からなるシールド磁性層15
が配設された構造となっている。
A magnetic silt body 11 made of Ni-Zn ferrite or the like and a shield magnetic layer 15 made of Ni-Fe or the like are connected to each other via 12b.
The structure is equipped with.

そしてかかるMR素子13の両端に設けた2本の引出し
導体14a、 14bを通して該MR素子13にセンス
電流を供給し、そのMR素子13の出力検知領域13a
で検知する記録媒体からの信号磁界の変化を電圧の変化
として検出することにより再生している。
Then, a sense current is supplied to the MR element 13 through two lead-out conductors 14a and 14b provided at both ends of the MR element 13, and an output detection area 13a of the MR element 13 is supplied.
Reproduction is performed by detecting changes in the signal magnetic field from the recording medium as changes in voltage.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところで上記のような従来のMRヘッドは、記録媒体の
高トラツク密度化に伴って、そのMR素子13の素子長
を短くしていくと、該MR素子13の内部には素子長方
向の容易軸の磁化方向とは、逆向きに生じる反磁界(H
d)が強くなり、該MR素子13の磁区構造が、磁束を
閉し込めると共に、その反磁界(Hd)によって誘起さ
れた静磁気的なエネルギーを低下させるような、第4図
に示す複数の磁区21に分割された還流磁区構造となり
、また各磁区21の境界に磁壁22が生じるようになる
By the way, in the conventional MR head as described above, when the element length of the MR element 13 is shortened as the track density of the recording medium becomes higher, an easy axis in the element length direction is formed inside the MR element 13. The demagnetizing field (H
d) becomes strong and the magnetic domain structure of the MR element 13 confines the magnetic flux and reduces the magnetostatic energy induced by the demagnetizing field (Hd). A reflux magnetic domain structure is obtained which is divided into magnetic domains 21, and domain walls 22 are generated at the boundaries of each magnetic domain 21.

また、Ni−Fe膜からなるMR素子13は、一般に成
膜時の不完全さから結晶粒界、格子欠陥、不純物介在な
どの不均一性があり、このため、記録媒体からの信号磁
界によりMR素子13内の磁区21間の磁壁22が引っ
掛かるように不連続的に移動するので、各磁区21の磁
化回転が不連続となって再生信号にバルクハウゼン雑音
が生じ、再生特性が劣化するという問題があった。
Furthermore, the MR element 13 made of the Ni-Fe film generally has non-uniformities such as crystal grain boundaries, lattice defects, and impurity inclusions due to imperfections during film formation. Since the domain walls 22 between the magnetic domains 21 in the element 13 move discontinuously as if caught, the magnetization rotation of each magnetic domain 21 becomes discontinuous, causing Barkhausen noise in the reproduced signal and deteriorating the reproduction characteristics. was there.

本発明は上記した従来の問題点に鑑み、MR素子の素子
長を短(しても、該MR素子内に還流磁区が生じない構
成とし、磁壁移動に起因するバルクハウゼン雑音の発生
を防止した再生特性の良い磁気抵抗効果型再生ヘッドを
提供することを目的とするものである。
In view of the above-mentioned conventional problems, the present invention has a structure in which a reflux magnetic domain does not occur in the MR element even if the element length of the MR element is shortened, thereby preventing the occurrence of Barkhausen noise caused by domain wall movement. It is an object of the present invention to provide a magnetoresistive reproducing head with good reproducing characteristics.

〔課題を解決するための手段] 本発明は上記した目的を達成するため、両端に引き出し
導体を接合した磁気抵抗効果素子の両側にそれぞれ非磁
性絶縁層を介して一対の磁気シールド体を配設した磁気
抵抗効果型再生ヘッドにおいて、前記磁気抵抗効果素子
の構成層を、複数の磁気特性劣化層によりアスペクト比
の大きい複数の素子に分割した構成とする。
[Means for Solving the Problems] In order to achieve the above-mentioned object, the present invention provides a pair of magnetic shields each disposed on both sides of a magnetoresistive element having a lead-out conductor connected to both ends via a non-magnetic insulating layer. In the magnetoresistive reproducing head, the constituent layers of the magnetoresistive element are divided into a plurality of elements each having a large aspect ratio by a plurality of magnetic property deterioration layers.

〔作 用〕[For production]

本発明ではMRヘッドにおけるMR素子構成層の長さ方
向に、例えば電子ビーム、またはレーザー・ビームを所
定間隔をもって選択的に照射して熱的に磁気特性を劣化
させるか、またはイオン注入により不純物を所定間隔を
もって選択的に注入して磁気特性を劣化させた複数の磁
気特性劣化層を設け、該MR素子をアスペクト比の大き
い複数の素子に分割した構成とすることにより、各分割
MR素子内に発生する反磁界による静磁エネルギーを下
げることが可能となって単磁区構造となるため、バルク
ハウゼン雑音の発生が防止され再生特性が向上する。
In the present invention, for example, electron beams or laser beams are selectively irradiated at predetermined intervals in the length direction of the MR element constituent layer in the MR head to thermally degrade the magnetic properties, or impurities are implanted by ion implantation. By providing a plurality of magnetic property deterioration layers whose magnetic properties have been degraded by selectively injecting them at predetermined intervals, and by dividing the MR element into a plurality of elements with large aspect ratios, each divided MR element has Since it becomes possible to lower the magnetostatic energy due to the generated demagnetizing field and obtain a single magnetic domain structure, the generation of Barkhausen noise is prevented and the reproduction characteristics are improved.

〔実施例〕〔Example〕

以下図面を用いて本発明の実施例について詳細に説明す
る。
Embodiments of the present invention will be described in detail below with reference to the drawings.

第1図は本発明に係るMRヘッドにおけるMR素子の一
実施例を示す要部斜視図である。
FIG. 1 is a perspective view of essential parts showing an embodiment of an MR element in an MR head according to the present invention.

図において、31は両端にCu、^1等からなる引き出
し導体14a、 14bを接合したNi−Fe膜からな
るMR素子であり、該MR素子31の長さ方向に所定間
隔をもって例えば電子ビーム、またはレーザー・ビーム
を選択的に照射して熱的に磁気特性を劣化させた複数の
磁気特性劣化層33を設ける。
In the figure, reference numeral 31 denotes an MR element made of a Ni-Fe film with lead-out conductors 14a and 14b made of Cu, ^1, etc. bonded to both ends. A plurality of magnetic property deterioration layers 33 whose magnetic properties have been thermally degraded by selective irradiation with a laser beam are provided.

即ち、具体的には第2図の部分拡大斜視図で示すように
Ni−Fe膜からなるMR素子31の長さ方向に所定間
隔をもって、例えば電子ビーム、またはレーザー・ビー
ムを選択的に照射して該Ni−Fe膜のキュリー(Cu
rie)点以上の温度(460°C)に部分的に加熱し
て磁気特性を劣化させた複数の磁気特性劣化層33a〜
33eを設けるか、または同じ< Ni−Fe膜からな
るMR素子31の長さ方向に所定間隔をもって、例えば
プロトン(Hつイオン、或いはヘリウム(He’)イオ
ン等からなる不純物イオンをイオン注入法により選択的
に注入して部分的に磁気特性を劣化させた複数の磁気特
性劣化層33a〜33eを設けることにより、該MR素
子31をアスペクト比の大きい複数の素子部分32a〜
32fに分割した構成とする。
Specifically, as shown in the partially enlarged perspective view of FIG. 2, an MR element 31 made of a Ni-Fe film is selectively irradiated with, for example, an electron beam or a laser beam at predetermined intervals in the length direction. Curie (Cu) of the Ni-Fe film
A plurality of magnetic property deterioration layers 33a~ whose magnetic properties are deteriorated by partially heating to a temperature (460°C) higher than the rie) point.
33e, or by implanting impurity ions such as protons (H ions or helium (He') ions) at predetermined intervals in the length direction of the MR element 31 made of the same Ni-Fe film. By providing a plurality of magnetic property deterioration layers 33a to 33e whose magnetic properties are partially degraded by selective implantation, the MR element 31 is formed into a plurality of element portions 32a to 33e having a large aspect ratio.
The configuration is divided into 32f.

そしてかかる複数の分割素子部分32a〜32fを有す
るMR素子31を組み込んだ構成のMRヘッドとするこ
とで、該複数に分割された各MR素子部分32a〜32
fはそれぞれ単一磁区構造となるため、バルクハウゼン
雑音の発生が防止され、再生波形の歪みも無くなるので
再生特性が向上する。
By providing an MR head that incorporates the MR element 31 having such a plurality of divided element parts 32a to 32f, each of the divided MR element parts 32a to 32
Since each of f has a single magnetic domain structure, generation of Barkhausen noise is prevented and distortion of the reproduced waveform is also eliminated, so that the reproduction characteristics are improved.

なお、以上の実施例では2端子型のMR素子を用いたセ
ルフバイアス方式のMRヘッドの場合の例について説明
したが、本発明はそのようなバイアス方式のMRヘッド
に限定されるものではなく、2端子型のMR素子を用い
た各種バイアス方式のMRヘッドに適用した場合にも同
様な効果が得られる。
In the above embodiment, an example of a self-bias type MR head using a two-terminal type MR element has been described, but the present invention is not limited to such a bias type MR head. Similar effects can be obtained when applied to various bias type MR heads using two-terminal MR elements.

〔発明の効果〕〔Effect of the invention〕

以上の説明から明らかなように、本発明に係る磁気抵抗
効果型再生ヘッドによれば、高トランク密度化に対応し
てMR素子の素子長を短くしても還流磁区の発生及びそ
れに起因するバルクハウゼン雑音の発生が防止され、記
録媒体に対する再生特性が向上する等、実用上価れた効
果を奏する。
As is clear from the above description, according to the magnetoresistive read head according to the present invention, even if the element length of the MR element is shortened in response to the increase in trunk density, the generation of freewheeling magnetic domains and the bulk This has practical effects such as preventing the occurrence of Hausen noise and improving the reproduction characteristics of the recording medium.

第4図は従来の磁気抵抗効果型再生ヘッドにおけるMR
素子の問題点を説明するため の部分拡大斜視図である。
Figure 4 shows MR in a conventional magnetoresistive read head.
FIG. 3 is a partially enlarged perspective view for explaining problems with the device.

第1図及び第2図において、 14a、 14bは引出し導体、31はMR素子、32
a〜32fは分割されたMR素子部分、33a〜33e
は磁気特性劣化層をそれぞれ示す。
In FIGS. 1 and 2, 14a and 14b are lead-out conductors, 31 is an MR element, and 32
a to 32f are divided MR element parts, 33a to 33e
indicate layers with deteriorated magnetic properties.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係る磁気抵抗効果型再生ヘッドにおけ
るMR素子の一実施例を示す 要部斜視図、 第2図は本発明に係る磁気抵抗効果型再生ヘッドにおけ
るMR素子を説明するための 部分拡大斜視図、 第3図は従来の磁気抵抗効果型再生ヘッドを示す要部概
略斜視図、
FIG. 1 is a perspective view of essential parts showing an embodiment of the MR element in the magnetoresistive read head according to the present invention, and FIG. 2 is a perspective view for explaining the MR element in the magnetoresistive read head according to the present invention. A partially enlarged perspective view; FIG. 3 is a schematic perspective view of the main parts of a conventional magnetoresistive read head;

Claims (3)

【特許請求の範囲】[Claims] (1)両端に引き出し導体(14a、14b)を接合し
た磁気抵抗効果素子(31)の両側にそれぞれ非磁性絶
縁層を介して一対の磁気シールド体を配設したヘッド構
成において、 前記磁気抵抗効果素子(31)の構成層を、複数の磁気
特性劣化層(33a〜33e)によりアスペクト比の大
きい複数の素子(32a〜32f)に分割して成ること
を特徴とする磁気抵抗効果型再生ヘッド。
(1) In a head configuration in which a pair of magnetic shields are disposed on both sides of a magnetoresistive element (31) with lead-out conductors (14a, 14b) connected to both ends thereof, with a nonmagnetic insulating layer interposed therebetween, the magnetoresistive effect described above is achieved. A magnetoresistive reproducing head characterized in that a constituent layer of an element (31) is divided into a plurality of elements (32a to 32f) having a large aspect ratio by a plurality of magnetic property deterioration layers (33a to 33e).
(2)前記磁気特性劣化層(33a〜33e)は、磁気
抵抗効果素子(31)の構成層の一部が熱処理により劣
化された層からなることを特徴とする請求項1記載の磁
気抵抗効果型再生ヘッド。
(2) The magnetoresistive effect according to claim 1, wherein the magnetic property deteriorated layer (33a to 33e) is a layer in which a part of the constituent layers of the magnetoresistive element (31) has been deteriorated by heat treatment. mold playback head.
(3)前記磁気特性劣化層(33a〜33e)は、磁気
抵抗効果素子(31)の構成層の一部がイオン注入によ
り劣化された層からなることを特徴とする請求項1記載
の磁気抵抗効果型再生ヘッド。
(3) The magnetoresistance according to claim 1, wherein the magnetic property deteriorated layer (33a to 33e) is a layer in which a part of the constituent layer of the magnetoresistive element (31) is deteriorated by ion implantation. Effect type playback head.
JP10406890A 1990-04-18 1990-04-18 Magneto-resistance effect type playback head Pending JPH041907A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10406890A JPH041907A (en) 1990-04-18 1990-04-18 Magneto-resistance effect type playback head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10406890A JPH041907A (en) 1990-04-18 1990-04-18 Magneto-resistance effect type playback head

Publications (1)

Publication Number Publication Date
JPH041907A true JPH041907A (en) 1992-01-07

Family

ID=14370849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10406890A Pending JPH041907A (en) 1990-04-18 1990-04-18 Magneto-resistance effect type playback head

Country Status (1)

Country Link
JP (1) JPH041907A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002207071A (en) * 2001-01-10 2002-07-26 Tohoku Ricoh Co Ltd Magnetic sensing element and azimuth-sensing system using the element
US6510031B1 (en) 1995-03-31 2003-01-21 International Business Machines Corporation Magnetoresistive sensor with magnetostatic coupling to obtain opposite alignment of magnetic regions
US8666696B2 (en) 2009-07-09 2014-03-04 Khoi Hanai Reed testing device for single-reed instrument

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6510031B1 (en) 1995-03-31 2003-01-21 International Business Machines Corporation Magnetoresistive sensor with magnetostatic coupling to obtain opposite alignment of magnetic regions
US6775109B2 (en) 1995-03-31 2004-08-10 International Business Machines Corporation Magnetoresistive sensor with magnetostatic coupling of magnetic regions
US6914761B2 (en) 1995-03-31 2005-07-05 International Business Machines Corporation Magnetoresistive sensor with magnetic flux paths surrounding non-magnetic regions of ferromagnetic material layer
JP2002207071A (en) * 2001-01-10 2002-07-26 Tohoku Ricoh Co Ltd Magnetic sensing element and azimuth-sensing system using the element
JP4575602B2 (en) * 2001-01-10 2010-11-04 東北リコー株式会社 Magnetic sensing element
US8666696B2 (en) 2009-07-09 2014-03-04 Khoi Hanai Reed testing device for single-reed instrument

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