JPH04187764A - Sputtering system - Google Patents

Abstract

PURPOSE:To improve the distribution and step coverage, to prevent the short circuit and wire breakage and to improve the wiring and yield by rotating a substrate holder fixing a wafer. CONSTITUTION:A sputtering chamber 1 is evacuated to a specified vacuum, a wafer 6 is fixed on a substrate holder 3, the holder 3 is rotated, Ar gas is introduced into the chamber 1, and the pressure in the chamber 1 is kept at a specified value. A voltage is impressed between a cathode 2 and the grounded holder 3 to generate a glow discharge. The cation of Ar is accelerated from plasma by the cathode dark space over the whole surface of the cathode 2, and metallic thin film atoms are sprung out of the surface of a target 5. A shutter 4 is then opened, a glow discharge is generated for a specified time, and a thin film is formed on the surface of the wafer 6.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of M-Rakudo] The present invention relates to a sputtering device used in semiconductor manufacturing equipment.

[Prior Art] As a conventional technique, sputtering was performed with a substrate holder holding a wafer fixed.

[The problem that the invention attempts to solve I! However, in the above-mentioned conventional technology, the distribution of the sputtered film is non-uniform and the step coverage is poor, resulting in short circuits and disconnections, resulting in poor wiring and a decrease in yield.

Therefore, in order to solve these conventional problems, the present invention improves wiring by rotating the substrate holder to improve distribution and step coverage, and prevent short circuits and disconnections. , and to improve yield.

[Means for Solving the Problems] The sputtering apparatus of the present invention is characterized in that a substrate holder fixing a wafer is rotated.

[Example] An embodiment of the present invention will be described based on the drawings.

FIG. 3 is a schematic cross-sectional view of a conventional sputter chamber. In the sputter chamber 1, a cathode 2 and a substrate holder 3 at ground potential are arranged facing each other, and a movable shutter 4 is provided between them. . A target 5 is attached to the cathode 2, and argon gas is flowed into the sputtering chamber 1, and the internal pressure of the sputtering chamber 1 is adjusted to 10-3 Torr ~ 10 by using a vacuum pump to balance the inflow gas amount and exhaust speed. -2To
Maintain around r r. After that, by applying a DC voltage of about 0.5 to IKV between the cathode 2 and the substrate holder 3 at ground potential to generate a glow discharge, argon cations from the plasma are accelerated in the dark part of the cathode in front of the cathode 2. The metal thin film atoms fly out from the surface of the target 5 by hitting the surface of the target 5. It is a well-known technique that a thin film of a predetermined thickness is then formed on the surface of the wafer 6 by opening the shutter 4 and performing glow discharge for a certain period of time.

Here, FIG. 1 is a schematic cross-sectional view of the sputter chamber of the present invention, in which the sputter chamber 1 is evacuated to 10-8 Torr to 10-7 Torr using a high vacuum pump, and then the wafer 6 is placed on the substrate. While rotating the substrate holder 3 while fixed on the holder 3, argon gas is introduced into the sputtering chamber 1, and the internal pressure of the sputtering chamber 1 is increased to 10-3 To while balancing the inflow gas amount and exhaust speed. r r ~10-2
When a voltage is applied between the cathode 2 and the substrate holder 3 at ground potential while maintaining the temperature at about T o r r, argon cations from the plasma are accelerated in the dark part of the cathode in front of the cathode 2 due to the generation of glow discharge. By hitting the surface of the target 5, metal thin film atoms fly out from the surface of the target 5, but the shutter 4 is kept closed for a short time to stabilize the discharge. Thereafter, by opening the shutter 4 and performing glow discharge for a certain period of time, the surface of the wafer 6 has a very good thin film distribution, and as shown in the stepped shapes of (a) and (b) in FIG. The step cover formed when the holder 3 and the wafer 6 are fixed (
In a), the step covering formed by rotating the substrate holder 3 to which the wafer 6 is fixed becomes as shown in FIG. 3B, making it possible to form a thin film with excellent step coverage.

Furthermore, by changing the rotational speed of the substrate holder 3 provided in the sputtering chamber 1 shown in FIG. 1, it becomes possible to form a thin film with even better thin film distribution and excellent step coverage.

[Effects of the Invention] As described above, the sputtering apparatus of the present invention rotates the substrate holder that fixes the wafer.
Improves thin film distribution on the wafer and improves step coverage.
By preventing the occurrence of short circuits and disconnections, it is effective to improve wiring and yield.

[Brief explanation of drawings]

FIG. 1 is a schematic cross-sectional view of the sputtering chamber of the present invention viewed from the side. FIG. 2(a) is a cross-sectional view of a thin film step covering formed by a conventional sputtering device. FIG. 2(b) is a sectional view of a thin film step covering formed by the sputtering apparatus of the present invention. FIG. 3 is a schematic cross-sectional view of a conventional sputtering chamber viewed from the side. 1... Sputter chamber 2... Cathode 3... Substrate holder 4... Shutter 5... Target 6... Wafer 7... Wiring metal coating Atomic Ko 3 (Fig.

Claims (1)

[Claims] A sputtering device characterized by rotating a substrate holder that fixes a wafer.