JPH04182396A - Crystal growing method - Google Patents
Crystal growing methodInfo
- Publication number
- JPH04182396A JPH04182396A JP30415690A JP30415690A JPH04182396A JP H04182396 A JPH04182396 A JP H04182396A JP 30415690 A JP30415690 A JP 30415690A JP 30415690 A JP30415690 A JP 30415690A JP H04182396 A JPH04182396 A JP H04182396A
- Authority
- JP
- Japan
- Prior art keywords
- reaction pipe
- supplied
- growth
- raw material
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000002994 raw material Substances 0.000 claims abstract description 14
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 10
- 239000011572 manganese Substances 0.000 claims description 37
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- 239000000696 magnetic material Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims description 5
- 238000002109 crystal growth method Methods 0.000 claims description 5
- CRDYYRDPRXAYHD-UHFFFAOYSA-N C(C)(C)C1(C=CC=C1)[Mn]C1(C=CC=C1)C(C)C Chemical compound C(C)(C)C1(C=CC=C1)[Mn]C1(C=CC=C1)C(C)C CRDYYRDPRXAYHD-UHFFFAOYSA-N 0.000 claims description 4
- 125000002524 organometallic group Chemical group 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 230000005587 bubbling Effects 0.000 abstract description 6
- 239000012159 carrier gas Substances 0.000 abstract description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 2
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- QMMFVYPAHWMCMS-UHFFFAOYSA-N Dimethyl sulfide Chemical compound CSC QMMFVYPAHWMCMS-UHFFFAOYSA-N 0.000 description 1
- 229910017231 MnTe Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- LCGVCXIFXLGLHG-UHFFFAOYSA-N cyclopenta-1,3-diene;manganese(2+) Chemical compound [Mn+2].C1C=CC=[C-]1.C1C=CC=[C-]1 LCGVCXIFXLGLHG-UHFFFAOYSA-N 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- ILXWFJOFKUNZJA-UHFFFAOYSA-N ethyltellanylethane Chemical compound CC[Te]CC ILXWFJOFKUNZJA-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はマンガンを含む半導体おるいは磁性体等の化合
物結晶の結晶成長方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for growing compound crystals such as semiconductors or magnetic substances containing manganese.
［従来の技術およびその課題］
結晶を構成する元素の１つがマンガン（Ｍｎ）である半
導体としては、Ｚｎ１．、ｘＭｎｘＳ（Ｏくｘ＜１ ）
、Ｚｎ１．ＭｎｘＳｅ （０＜ｘ＜１ ）。[Prior art and its problems] As a semiconductor whose crystal is composed of manganese (Mn) as one of its elements, Zn1. , xMnxS (Ox<1)
, Zn1. MnxSe (0<x<1).
Ｃｄ １−ｘ Ｍ ｎ ｘ Ｔ ｅ （０＜ ｘ ＜
１ ＞など、他にも多くの種類の混晶がある。これらは
、Ｍｎが磁性材料であるため、希釈磁性半導体と呼ばれ
ている。Cd 1-x M n x T e (0< x <
There are many other types of mixed crystals such as 1>. These are called diluted magnetic semiconductors because Mn is a magnetic material.
これらの結晶に磁界を印加すると、バンドギャップが磁
界強度とともに変化したり、光の偏光特性が変化すると
いう特異な特徴かあり、近年非常に注目されている材料
でおる。When a magnetic field is applied to these crystals, the bandgap changes with the magnetic field strength, and the polarization characteristics of light change, making them unique materials that have attracted much attention in recent years.
一方、故意に添加する不純物の１つがＭｎである半導体
の代表的なものとして、ＭｎドープＺｎＳやｚｎ３ｅが
ある。ＺｎＳやＺ ｎ Ｓ ｅ ハ周知のように可視領
域で発光する材料であり、発光ダイオード、半導体レー
９９やフラン１〜パネルデイスプレーの′）ｌΔ利とし
て結晶成長からデバイス応用まで１１市力的に仙究聞発
が進められている。これらの（Ａ別にＭｎをドーピング
すると、結晶性が改善されるとともに、発光特性が改善
されることか近年明らかとなっている。On the other hand, Mn-doped ZnS and zn3e are typical semiconductors in which Mn is one of the intentionally added impurities. As is well known, ZnS and ZnS are materials that emit light in the visible region, and are widely used in light-emitting diodes, semiconductor lasers, and panel displays, from crystal growth to device applications. Senkyokumonbatsu is in progress. In recent years, it has become clear that doping Mn separately from these (A) improves the crystallinity and the light emission characteristics.
上に挙げた半導体材料を成長する方法としては、有機金
属気相成長方法（ＭＯＣＶＤ）や分子線エピタキシー法
（ＭＢＦ）か必るが、一般にはＭＢ「が用いられている
。その理由は、次に述べるようである。つまり、従来、
Ｍｎの有機金属原料としては、ジシクロペンタジェニル
マンガン（Ｍｎ（Ｃ５［」５）２）や１〜リカルボニル
メチルシクロペンタジエ−ルマンカン（Ｃ６ＨＢ Ｍｎ
（Ｃｏ）３）がおる。前者においては、融点か１５８
°Ｃと高いため、通常ＭＯＣＶＤで用いられる有機金属
のバブリング輸送法では輸送量を精密に制御することが
困難でおるという欠点かあった。一方、後者は室温にお
いて液体であるため、バブリングには適しているが、原
料中に酸素を含むため成長膜か酸化してしまい、良質な
膜か得られないという欠点があった。つまり、従来では
ＭＯＣＶＤを行うのに適したＭｎの有機金属原料かなか
ったわけで必る。Methods for growing the semiconductor materials listed above include metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBF), but MB is generally used.The reason is as follows. In other words, conventionally,
Examples of organic metal raw materials for Mn include dicyclopentadienylmanganese (Mn(C5['5)2) and 1-licarbonylmethylcyclopentadiene mankane (C6HB Mn
(Co)3) is here. In the former case, the melting point is 158
Because the temperature is as high as .degree. C., it is difficult to precisely control the amount of transport using the bubbling transport method of metal organics normally used in MOCVD. On the other hand, since the latter is a liquid at room temperature, it is suitable for bubbling, but since the raw material contains oxygen, the grown film will oxidize, making it impossible to obtain a high-quality film. In other words, this is necessary because conventionally there was no Mn organic metal raw material suitable for MOCVD.
ところで、前述した材料であるｃｄ丁ｅやＺｎＳを結晶
成長するには基板が必要であるが、これらの材料の基板
は非常に高価であり、かつ結晶性が低い。このため、基
板としては安価で結晶性に優れたＧａＡＳやＩｎＳｂな
どの■−■族化合物半導体基板が多く用いられている。Incidentally, a substrate is required for crystal growth of the above-mentioned materials CDD and ZnS, but substrates of these materials are very expensive and have low crystallinity. For this reason, 1-2 group compound semiconductor substrates such as GaAS and InSb, which are inexpensive and have excellent crystallinity, are often used as substrates.
このような基板上に成長する場合には、成長層の結晶性
を高めるため、基板と同一組成のバッファ層を成長し、
連続してＱｄ丁ｅやＺｎＳ等を成長するのが望ましい。When growing on such a substrate, a buffer layer with the same composition as the substrate is grown to improve the crystallinity of the growth layer.
It is desirable to continuously grow Qd, ZnS, etc.
このように、■−■族化合物半導体と■−Ｖｌ族化合物
半導体を連続して成長させることは■−Ｖ族とｎ −ｖ
ｉ族がお互いに不純物元素の関係にあることから、成長
室が閉じた系で必るＭＢＥでは非常に難しい。ところか
、ＭＯＣＶＤは成長系が開管系でおるため個々の成長ガ
スを完全に成長系から排気することかできる。この結果
、■−ｖ族化合物半導体バッファ層上にｎ−ｖｉ族化合
物半導体を連続成長でき、更には■−ｖ族とＩｒ−Ｖｌ
族の多層連続成長も可能である。このようにＭＯＣＶＤ
は上）ホした材料を成長する手法として極めて重要な方
法でおる。In this way, the continuous growth of the ■-■ group compound semiconductor and the ■-Vl group compound semiconductor is similar to that of the ■-V group compound semiconductor and the n-v group compound semiconductor.
Since the i-group members are in a relationship with each other as impurity elements, MBE, which is necessary in a closed growth chamber, is extremely difficult. On the other hand, in MOCVD, since the growth system is an open tube system, each growth gas can be completely exhausted from the growth system. As a result, it is possible to continuously grow the n-vi group compound semiconductor on the ■-v group compound semiconductor buffer layer, and furthermore, the n-vi group compound semiconductor and the Ir-Vl group
Multilayer continuous growth of families is also possible. In this way MOCVD
(above) This is an extremely important method for growing such materials.
本発明の目的は、成長原料のうち少なくとも１種でも有
機金属原料を用いる成長法において、（ｉも成元素の１
つがＭｎであるような半導体または磁性体、おるいは故
意に添加する不純物の１つかＭｎであるような半導体ま
たは磁性体を結晶成長可能にさせることにある。An object of the present invention is to provide a growth method using at least one organometallic material among the growth materials (where i is one of the constituent elements).
The object of the present invention is to enable crystal growth of semiconductors or magnetic materials in which one of the impurities is Mn, or a semiconductor or magnetic material in which Mn is one of the intentionally added impurities.
［課題を解決するための手段］
本発明は、結晶を構成する構成元素の１つがマンガン（
Ｍｎ）でおる半導体あるいは磁性体の結晶成長を、少な
くとも１種以上の有機金属原料を用いて行う結晶成長方
法において、マンガンの有機金属原料としてビス（イソ
プロピルシクロペンタジェニル）マンガン［Ｍ ｎ （
ｉ Ｃ３）−１７Ｃ５町）２］を用いることを特徴と
する結晶成長方法、および結晶に故意に添加する不純物
の１つがマンガン（Ｍｎ）である半導体あるいは磁性体
の結晶成長を、少なくとも１種以上の有機金属原料を用
いて行う結晶成長方法において、マンガンの有機金属原
料としてビス（イソプロピルシクロペンタジェニル）マ
ンガン［Ｍ ｎ （ｉ −０３Ｈ７Ｃ５Ｈ４）２］を用
いることを特徴とする結晶成長方法である。[Means for Solving the Problems] The present invention provides a method in which one of the constituent elements constituting the crystal is manganese (
In a crystal growth method in which crystal growth of a semiconductor or magnetic material made of Mn (Mn
i C3)-17C5 Town) 2], and at least one crystal growth method of a semiconductor or magnetic material in which one of the impurities intentionally added to the crystal is manganese (Mn). A crystal growth method using bis(isopropylcyclopentadienyl)manganese [Mn(i-03H7C5H4)2] as an organometallic raw material for manganese. .
１作用］
本発明で用いられるビス（イソプロピルシクロペンタジ
ェニル）マンガン［Ｍｎ （１−Ｃ３１−１゜Ｃ３Ｈ４
）２］は室温において液体である。また、８０°Ｃに加
熱すれば１０ Ｔｏｒｒ程度の蒸気圧が得られる。従っ
て輸送量の精密な制御が可能である。1 action] Bis(isopropylcyclopentadienyl)manganese [Mn (1-C31-1゜C3H4
)2] is a liquid at room temperature. Further, if heated to 80°C, a vapor pressure of about 10 Torr can be obtained. Therefore, precise control of the transport amount is possible.
また、原料中に酸素を含まないため、成長膜が酸化する
ことがなく、良質な膜が得られる。Furthermore, since the raw material does not contain oxygen, the grown film is not oxidized and a high quality film can be obtained.
以上のことから、有機金属原料を用いる成長方法、例え
ばＭＯＣＶＤや有機金属を分子線源とするＭＢＥ （Ｍ
ＯＭＢＥ）といった成長法に用いることかできる。From the above, growth methods using organometallic raw materials, such as MOCVD and MBE (M
It can be used for growth methods such as OMBE).
［実施例］
次に、本発明の実施例について、図面を用いて詳細に説
明する。[Example] Next, an example of the present invention will be described in detail using the drawings.
実施例１
第１図は実施例に用いた結晶成長装置の概略構成図であ
る９、用いた成長装置（３上、反応管１１内に設置され
た基板１２を高周波」イル１３の誘導加熱によって加熱
するようになっている。また、反応管１１には、ト１２
をキャリアガスとしてＡ Ｓ Ｌ−１３の他、複数の有
機原料がＨ２のバブリングによって供給されるようにな
っている。本実施例では基板としてＧａＡＳを用い、Ｇ
ａＡｓバッファ層を成長したのら、連続してＣｄＭｎＴ
ｅを成長した場合について説明する。成長の手順は以下
の様で必る。Example 1 Figure 1 is a schematic diagram of the crystal growth apparatus used in the example. The reaction tube 11 is also equipped with a tray 12.
In addition to ASL-13, a plurality of organic raw materials are supplied by bubbling H2 as a carrier gas. In this example, GaAS is used as the substrate, and G
After growing the aAs buffer layer, CdMnT is continuously grown.
The case where e is grown will be explained. The growth procedure is as follows.
Ａ Ｓ Ｈ３を反応管１１に供給しながら基板１２を５
８０ ’Ｃまで昇温した。バブラー１ａに納められたト
リメデルカリウム（Ｇａ （ＣＨ３＞３ ： ＴＭＧａ
）を町でバブリングし、バブリングか安定した時点でＴ
ＭＧａを反応管１１に供給した。この時の丁ＭＧａの流
ｆｉ１．Ｊ ０．５ ｓｅｃｍ 、 Ａ ｓ Ｈ３の流
量は１５ ＳＣＣｍであり、キレリア１−１２は５００
０ ｓｅｃｍ。While supplying A S H3 to the reaction tube 11, the substrate 12 is
The temperature was raised to 80'C. Trimedel potassium (Ga (CH3>3: TMGa) stored in bubbler 1a
) in town, and when the bubbling becomes stable, T
MGa was supplied to the reaction tube 11. At this time, Ding MGa's style fi1. J 0.5 secm, the flow rate of A s H3 is 15 SCCm, and the flow rate of Killeria 1-12 is 500 SCCm.
0 seconds.
反応管の圧力は７６ Ｔｏｒｒに設定した。The pressure in the reaction tube was set at 76 Torr.
（３ａＡｓバッファ層を５００ ｎｍ成長したのち、直
ちに基板温度を４００ ’Ｃまで降温し、連続してＣｄ
ＭｎＴｅの成長を行った。バブラー１ｂに納められたジ
メチルカドミウム（Ｃｄ（ＣＨ３）２ ：ＤＭＣｄ）を
０．４ ｓｅｃｍ 、バブラー１０に納められたジエチ
ルテルル（Ｔｅ （Ｃ２１−１５）２ ； ＤＥ−ｒ
ｅ ＞を１．６ ＳＣＣｍ 、バフ′ラ−］ｄに納め
られたビス（イソプロピルシクロペンタジェニル）マン
ガンを０．Ｉ ＳＣＣｍ 、それぞれ反応管１１に供給
し１こ 。(After growing the 3aAs buffer layer to a thickness of 500 nm, the substrate temperature was immediately lowered to 400'C, and Cd
MnTe was grown. The dimethyl cadmium (Cd(CH3)2:DMCd) stored in the bubbler 1b was 0.4 sec, and the diethyl tellurium (Te(C21-15)2; DE-r) stored in the bubbler 10.
e > 1.6 SCCm, bis(isopropylcyclopentagenyl) manganese stored in the buffer was 0. I SCCm were each supplied to the reaction tube 11.
得られた膜の表面は鏡面でおった。膜表面からの深さ方
向組成分布をオージェ電子分光法で測定した結果、Ｍｎ
の深さ分布は完全に均一であり、かつＣｄＭｎＴｅと（
３ａＡｓの界面は極めて急峻なものであった。また、Ｃ
ｄＭｎＴｅの電気的および光学的特性もＣｄＴｅ基板上
に成長した場合と同等の良質なものであった。１
実施例２
基板に５ｉ（１１１）基板を用い、Ｍ ｎをドーピング
した７「ＩＳ膜の成長を行った場合について説明する。The surface of the obtained membrane was mirror-finished. As a result of measuring the composition distribution in the depth direction from the film surface using Auger electron spectroscopy, it was found that Mn
The depth distribution of CdMnTe and (
The interface of 3aAs was extremely steep. Also, C
The electrical and optical properties of dMnTe were also of good quality, comparable to those grown on a CdTe substrate. 1 Example 2 A case will be described in which a 7" IS film doped with Mn is grown using a 5i (111) substrate as the substrate.
用いた成長装置は第１図に示した実施例１と同様のもの
である。成長開始前、反応管内に設置したＳｉ基板をＨ
２気流中、９５０°Ｃ１５分間アニールした。これによ
り、Ｓｉ基板表面の酸化膜は除去される。基板温度を５
００℃に設定し、バブラー１ａに納められたジメチル亜
鉛（７ｎ（ＣＩ−１） ；０Ｍ７ｎ）を０．４ ＳＣ
Ｃｍ 、バブラ一１ｂに納められたジメチルイオウ（Ｓ
（Ｃ１−１３＞２：ＤＭＳ）を１．６ ＳＣＣｍ 、そ
レソｊｎ 反応管ニ供給した。同時にバブラー１０より
ビス（インプロピルシクロペンタジェニル〉マンガンを
ＤＭＳ流流
量５対して１０ 倍から１０−３倍までそれぞれ変え
ながら成長を行った。The growth apparatus used was the same as in Example 1 shown in FIG. Before the start of growth, the Si substrate placed in the reaction tube was heated with H
Annealing was performed at 950° C. for 15 minutes in 2 air currents. As a result, the oxide film on the surface of the Si substrate is removed. Set the board temperature to 5
Set at 00℃, dimethyl zinc (7n (CI-1); 0M7n) stored in bubbler 1a was heated to 0.4 SC.
Cm, dimethyl sulfur (S) stored in bubbler 1b
1.6 SCCm of (C1-13>2:DMS) was supplied to the reaction tube. At the same time, growth was carried out using a bubbler 10 while changing bis(inpropylcyclopentagenyl)manganese from 10 times to 10 −3 times the DMS flow rate of 5 times.
ドーピング濃度をそれぞれ変えて得られた試料に対し、
２次イオン質量分光法を用いで、膜表面−Ｑ ＝
からの深さ方向Ｍｎ濃度分布を測定した。Ｍｎのドーピ
ング濃度ハ５ｘｌｏ ｃｍ から３ Ｘ １０１１
０１９Ｃまで変化できた。また、各試料のＭｎの深さ方
向濃度分布は均一なもので必った。得られた膜のホトル
ミネッセンス特性を調べた結果、Ｍｎのドーピング濃度
の上昇とともに発光強度の改善が見られ、発光強度、半
値全幅とも良好なものであった。For samples obtained with different doping concentrations,
The Mn concentration distribution in the depth direction from the film surface -Q = was measured using secondary ion mass spectroscopy. Mn doping concentration from 5 x lo cm to 3 x 1011
I was able to change it to 019C. Furthermore, the Mn concentration distribution in the depth direction of each sample was required to be uniform. As a result of examining the photoluminescence properties of the obtained film, it was found that the emission intensity improved as the Mn doping concentration increased, and both the emission intensity and full width at half maximum were good.
上記実施例１では、結晶を構成する構成元素の１つかＭ
ｎて必る半導体として、ＣｄＭｎＴｅを取り上げたが、
本発明ではこれに限定されず、ＺｎＭｎ５．ＺｎＭｎＳ
ｅ、ＣｄＭｎＴｅ、ＩｎＭｎＡＳなど他の材料でもよい
のは明らかでおる。In Example 1 above, one of the constituent elements constituting the crystal or M
I mentioned CdMnTe as an essential semiconductor,
The present invention is not limited to this, and ZnMn5. ZnMnS
It is obvious that other materials such as E, CdMnTe, and InMnAS may also be used.
また、上記実施例２では、結晶に故意に添加する不純物
の１つがＭｎでおる半導体として、１ｖｌｎドープＺｎ
Ｓを取り上げたが、本発明はこれに限定されず、Ｚｎ５
ｅ、 ／ｎ丁ｅ、Ｊｎｐ、ＱａＡＳなど他の材料でもよ
いのは明らかである。In addition, in the above Example 2, 1vln-doped Zn was used as a semiconductor in which Mn was one of the impurities intentionally added to the crystal.
Although Zn5 is taken up, the present invention is not limited thereto.
Obviously, other materials such as e, /n, Jnp, QaAS, etc. may also be used.
上記実施例では、成長装置として気相成長装置を用いた
か、本発明はこれに限定されず、有機金属原料を分子線
源として結晶成長を行うＭＯＭＢＦなどでもにい。In the above embodiments, a vapor phase growth apparatus was used as the growth apparatus, but the present invention is not limited thereto, and MOMBF, which performs crystal growth using an organic metal raw material as a molecular beam source, may also be used.
Ｌ発明の効果コ
以上説明したように、本発明の方法を用いれば、有機金
属原料を用いる成長方法によりＭｎを構成元素の１つと
する結晶膜、およびＭｎを故意にドーピングさせた結晶
膜が得られる。この方法では、結晶成長系が安価でおり
、かつ容易に再現性良く結晶成長か可能である。本発明
を用いて得られたこれらの膜は、光アイソレータヤ高輝
度の可視光発光素子として用いられる。L Effects of the Invention As explained above, by using the method of the present invention, a crystal film containing Mn as one of the constituent elements and a crystal film intentionally doped with Mn can be obtained by a growth method using an organic metal raw material. It will be done. In this method, the crystal growth system is inexpensive and crystal growth can be easily performed with good reproducibility. These films obtained using the present invention are used as optical isolators and high-brightness visible light emitting devices.
第１図は本発明の方法に用いられる成長装置の一例の概
略構成図である。
１８〜１ｄ・・・バブラー
１１・・・反応管
１２・・・基板
１３・・・高周波コイルFIG. 1 is a schematic diagram of an example of a growth apparatus used in the method of the present invention. 18-1d...Bubbler 11...Reaction tube 12...Substrate 13...High frequency coil
Claims (2)
）である半導体あるいは磁性体の結晶成長を、少なくと
も１種以上の有機金属原料を用いて行う結晶成長方法に
おいて、マンガンの有機金属原料としてビス（イソプロ
ピルシクロペンタジエニル）マンガン［Ｍｎ（ｉ−Ｃ＿
３Ｈ＿７Ｃ＿５Ｈ＿４）＿２］を用いることを特徴とす
る結晶成長方法。(1) One of the constituent elements that make up the crystal is manganese (Mn
) in a crystal growth method of a semiconductor or magnetic material using at least one organic metal raw material, bis(isopropylcyclopentadienyl)manganese [Mn(i-C_
3H_7C_5H_4)_2].
Ｍｎ）である半導体あるいは磁性体の結晶成長を、少な
くとも１種以上の有機金属原料を用いて行う結晶成長方
法において、マンガンの有機金属原料としてビス（イソ
プロピルシクロペンタジエニル）マンガン［Ｍｎ（ｉ−
Ｃ＿３Ｈ＿７Ｃ＿５Ｈ＿４）＿２］を用いることを特徴
とする結晶成長方法。(2) One of the impurities intentionally added to crystals is manganese (
In a crystal growth method in which crystal growth of a semiconductor or magnetic material (Mn) is performed using at least one organometallic raw material, bis(isopropylcyclopentadienyl)manganese [Mn(i-
C_3H_7C_5H_4)_2].
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30415690A JP2646841B2 (en) | 1990-11-13 | 1990-11-13 | Crystal growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30415690A JP2646841B2 (en) | 1990-11-13 | 1990-11-13 | Crystal growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04182396A true JPH04182396A (en) | 1992-06-29 |
| JP2646841B2 JP2646841B2 (en) | 1997-08-27 |
Family
ID=17929733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30415690A Expired - Lifetime JP2646841B2 (en) | 1990-11-13 | 1990-11-13 | Crystal growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2646841B2 (en) |
-
1990
- 1990-11-13 JP JP30415690A patent/JP2646841B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2646841B2 (en) | 1997-08-27 |
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