JPH04177819A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH04177819A JPH04177819A JP30684290A JP30684290A JPH04177819A JP H04177819 A JPH04177819 A JP H04177819A JP 30684290 A JP30684290 A JP 30684290A JP 30684290 A JP30684290 A JP 30684290A JP H04177819 A JPH04177819 A JP H04177819A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum device
- dust
- charged
- negatively
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000428 dust Substances 0.000 claims abstract description 31
- 239000002245 particle Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 10
- 239000011521 glass Substances 0.000 abstract description 2
- 238000010894 electron beam technology Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】 〔概 要〕 真空装置を用いる処理工程に関し。[Detailed description of the invention] 〔overview〕 Regarding processing processes using vacuum equipment.
該真空装置内に残留する塵埃による被処理試料の汚染を
防止することを目的とし。The purpose is to prevent contamination of the sample to be processed by dust remaining in the vacuum device.
正または負の電荷を帯電させた部材を真空装置内に設置
して該真空装置内に存在する負または正に帯電した塵埃
粒子を静電吸着させて除去したのち該真空装置内に被処
理試料を送入して所定の処理を行う工程を含むように構
成する。A positively or negatively charged member is installed in a vacuum device to electrostatically adsorb and remove negatively or positively charged dust particles present in the vacuum device, and then the sample to be processed is placed inside the vacuum device. The structure is configured to include a step of sending in and performing predetermined processing.
本発明は、真空装置を用いる処理工程、とくに。 The present invention particularly relates to a processing process using a vacuum device.
電子ビーム露光装置内における残留塵埃の除去方法に関
する。The present invention relates to a method for removing residual dust in an electron beam exposure apparatus.
電子ビーム露光装置においても、半導体ウェハやレチク
ル基板等の被処理物体に付着して持ち込まれる塵埃、露
光装置内を大気圧に戻すときのパージガスに混入して持
ち込まれる塵埃、露光装置内において被処理物体を移動
および搬入上させるための機械的可動部の摩耗によって
生じる塵埃等による汚染が問題となる。とくに、電子ビ
ーム露光装置によって作製されるレチクルは、多数の半
導体ウェハに対する光学的露光において繰り返し用いら
れるために、そのパターンに、上記のような塵埃による
欠損が内在することを極力避けなければならない。In electron beam exposure equipment, there are also dust that adheres to objects to be processed such as semiconductor wafers and reticle substrates and is brought in, dust that is mixed into the purge gas when returning the inside of the exposure equipment to atmospheric pressure, and dust that is brought in to be processed inside the exposure equipment. Contamination caused by dust and the like caused by wear of mechanical movable parts for moving and loading objects becomes a problem. In particular, since a reticle produced by an electron beam exposure apparatus is used repeatedly in optical exposure of a large number of semiconductor wafers, it is necessary to avoid the defects caused by dust in the pattern as much as possible.
従来から、電子ビーム露光装置の内部に蓄積する上記の
ような塵埃の除去は、一般に、アルコール等を含ませた
クリーニングペーパーにより拭き取る方法によって行わ
れているようであるが、この方法では、完全な除去を期
し難い。また７ クリーニングペーパー自体から塵埃か
発生する可能性もある。Conventionally, the above-mentioned dust that accumulates inside an electron beam exposure device has generally been removed by wiping it with a cleaning paper soaked in alcohol, but this method does not completely remove the dust. Difficult to remove. There is also a possibility that dust may be generated from the cleaning paper itself.
本発明は、上記従来の問題点を解決し、真空装置内の塵
埃を効果的に除去可能であり、かつ、それ自身からの発
塵のない除去方法を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional problems and provide a method for removing dust within a vacuum apparatus effectively and without generating dust from the vacuum apparatus itself.
上記目的は、正または負の電荷を帯電させた部材を真空
装置内に設置して該真空装置内に存在する負または正に
帯電した塵埃粒子を静電吸着させて除去したのち該真空
装置内に被処理試料を送入して所定の処理を行う工程を
含むことを特徴とする本発明に係る半導体装置の製造方
法によって達成される。The above purpose is to install a positively or negatively charged member in a vacuum device, electrostatically attract and remove negatively or positively charged dust particles present in the vacuum device, and then remove the negatively or positively charged dust particles present in the vacuum device. This is achieved by the method for manufacturing a semiconductor device according to the present invention, which includes the step of sending a sample to be processed into a sample and performing a predetermined process.
第１図は本発明の原理説明図であって、真空装置ｌの内
部は１図示しない排気装置によって真空排気可能にされ
ている。同図において符号２は。FIG. 1 is a diagram illustrating the principle of the present invention, in which the inside of a vacuum device 1 can be evacuated by an evacuation device (not shown). In the figure, numeral 2 is.
被処理物体を送人出するための１例えばゲートバルブ２
である。真空装置１内部は、パージガスか導入されて大
気圧の状態にあるものとする。1 for sending out the object to be processed, for example, a gate valve 2
It is. It is assumed that the inside of the vacuum device 1 is at atmospheric pressure after a purge gas is introduced therein.
いま９例えばガラス板等の絶縁性の部材３に。Now 9, for example, an insulating member 3 such as a glass plate.
例えば、イオナイザ４によりイオン化された空気を照射
する。イオナイザ４により１例えば正に帯電させた部材
３を真空装置ｌ内に送入すると、真空装置１内の負に帯
電した塵埃５は、静電引力により部材３に吸着され９部
材３とともに真空装置１の外部に取り出される。同様に
して２部材３を負に帯電させることにより、真空装置１
内の正に帯電した塵埃が除去される。For example, air ionized by the ionizer 4 is irradiated. When a member 3 that has been positively charged by the ionizer 4 is fed into the vacuum apparatus l, the negatively charged dust 5 in the vacuum apparatus 1 is attracted to the member 3 by electrostatic attraction, and together with the member 3, the vacuum apparatus 1. By similarly charging the second member 3 negatively, the vacuum device 1
The positively charged dust inside is removed.
以下本発明の実施例を図面を参照して説明する。 Embodiments of the present invention will be described below with reference to the drawings.
上記部材３として、レチクル用の乾板と同じ縦横寸法１
２５ｍｍ、厚さ２．３ｍｍの石英ガラス板の一表面にク
ロム膜を１μｍの厚さに被着したものを用いる。これを
、第２図に示すように、前記乾板用のム膜が被着された
石英ガラス板から成る部材３か装着されたホルダ６の平
面図、同図（ｂ）は、同図（ａｌにおけるＸ−Ｘ断面図
である。ホルダ６は９通常。As the above member 3, the vertical and horizontal dimensions 1 are the same as the dry plate for the reticle.
A quartz glass plate having a size of 25 mm and a thickness of 2.3 mm and having a chromium film adhered to a thickness of 1 μm on one surface is used. As shown in FIG. 2, a plan view of a holder 6 equipped with a member 3 made of a quartz glass plate coated with a film for dry plates, and FIG. 9 is a sectional view taken along line XX in FIG.
金属から成るため２部材３とホルダ６との間に。Between the two members 3 and the holder 6 because it is made of metal.
例えば弗素樹脂から成る絶縁性のガイド７を挿入して２
両者を電気的に絶縁する。なお、前記クロム膜は１石英
ガラス板表面に蓄積する電荷の分布を均一にするために
設けられるものであって、必須ではない。したがって１
石英ガラス板のような部材３をそのままホルダ６に装着
する場合には。For example, by inserting an insulating guide 7 made of fluororesin,
Electrically insulate both. Note that the chromium film is provided to make uniform the distribution of charges accumulated on the surface of the quartz glass plate, and is not essential. Therefore 1
When a member 3 such as a quartz glass plate is attached to the holder 6 as is.
絶縁性ガイド７は不要であることは言うまでもない。Needless to say, the insulating guide 7 is unnecessary.
次いで、第３図に示すように、ホルダ６の窓から表出し
ている部材３表面をイオナイザ４からのイオンにより照
射する。これにより９部材３表面か正または負に帯電す
る。このようにして帯電した部材３を、支持枠６に装着
したまま、ゲートバルブ２を通じて真空装置１ （とも
に第１図参照）内に設置する。これにより、真空装置１
内の塵埃が部材３に静電引力により集められる。Next, as shown in FIG. 3, the surface of the member 3 exposed through the window of the holder 6 is irradiated with ions from the ionizer 4. As a result, the surface of the member 9 is charged positively or negatively. The member 3 charged in this manner is placed in the vacuum device 1 (see FIG. 1) through the gate valve 2 while being attached to the support frame 6. As a result, the vacuum device 1
Dust inside is collected on the member 3 by electrostatic attraction.
上記のように帯電した部材３を真空装置ｌ内に送入する
時期および時間は任意であるか、被処理物体を真空装置
１内に送入する直前に行うのかもっとも効果的であるこ
とは言うまでもない。また。It goes without saying that the timing and time for feeding the charged member 3 into the vacuum device 1 as described above is arbitrary, or it is most effective to do it immediately before feeding the object to be processed into the vacuum device 1. stomach. Also.
真空装置ｌの休止期間に、上記帯電した部材３を真空装
置ｌ内に放置しておくことも、残留塵埃を除去する上で
有効である。It is also effective to leave the charged member 3 in the vacuum device 1 during the period when the vacuum device 1 is not in use, in order to remove residual dust.
本発明は、電子ビーム露光装置内の塵埃除去に留まらず
、その他の真空装置内の塵埃除去にも有効に適用できる
ことは言うまでもない。It goes without saying that the present invention can be effectively applied not only to removing dust within an electron beam exposure apparatus but also to removing dust within other vacuum apparatuses.
本発明によれば、真空装置を用いる処理工程における塵
埃の除去に対して次のような利点を有する。According to the present invention, the following advantages are provided for removing dust in a processing process using a vacuum device.
■作業者の手が入らないような狭くまたは複雑な空間に
残留する塵埃を除去できる。■It is possible to remove dust remaining in narrow or complicated spaces where workers cannot reach.
■それ自身からの発塵による汚染がない。■No contamination due to dust generation from itself.
■真空装置の休止期間においても塵埃除去が自動的に行
われる。■Dust removal is performed automatically even when the vacuum equipment is not operating.
以上により、従来によりも清浄な環境での処理を可能と
し、かつ、塵埃除去のための保守能率を向上可能とする
効果かある。As described above, it is possible to perform processing in a cleaner environment than before, and the maintenance efficiency for removing dust can be improved.
第１図は本発明の原理説明図。
第２図および第３図は本発明の詳細な説明図である。
図において。
１は真空装置、 ２はゲートバルブ。
３は部材、 ４はイオナイザ。
６はホルダ、 ７は絶縁性ガイド
である。
本発明の虚工里へえ明図
￥＋１Ｉ２１
水忙岨の突流０゛）説明図（ｔの１）
’３ｆ５Ｚ 図
水荒哨の突旋（り゛］説哨口（チの２）犀 ３
図FIG. 1 is a diagram explaining the principle of the present invention. 2 and 3 are detailed illustrations of the present invention. In fig. 1 is a vacuum device, 2 is a gate valve. 3 is a component, 4 is an ionizer. 6 is a holder, and 7 is an insulating guide. To the empty village of the present invention, a clear map ¥ + 1I21 Suicheng Stream 0゛) explanatory diagram (T no 1) '3f5Z diagram Shui Rau Sho's rush (Ri゛) Sentou entrance (Chi no 2) 犀 3
figure
Claims (1)
して該真空装置内に存在する負または正に帯電した塵埃
粒子を静電吸着させて除去したのち該真空装置内に被処
理試料を送入して所定の処理を行う工程を含むことを特
徴とする半導体装置の製造方法。A positively or negatively charged member is installed in a vacuum device to electrostatically adsorb and remove negatively or positively charged dust particles present in the vacuum device, and then the sample to be processed is placed inside the vacuum device. 1. A method of manufacturing a semiconductor device, the method comprising the step of delivering a semiconductor device and performing a predetermined process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30684290A JPH04177819A (en) | 1990-11-13 | 1990-11-13 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30684290A JPH04177819A (en) | 1990-11-13 | 1990-11-13 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04177819A true JPH04177819A (en) | 1992-06-25 |
Family
ID=17961913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30684290A Pending JPH04177819A (en) | 1990-11-13 | 1990-11-13 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04177819A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0790642A2 (en) * | 1996-02-02 | 1997-08-20 | Applied Materials, Inc. | Method and apparatus for removing contaminant particles from surfaces in semiconductor processing equipment |
| JP2002110515A (en) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | Dust collection method for pattern-drawing device |
-
1990
- 1990-11-13 JP JP30684290A patent/JPH04177819A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0790642A2 (en) * | 1996-02-02 | 1997-08-20 | Applied Materials, Inc. | Method and apparatus for removing contaminant particles from surfaces in semiconductor processing equipment |
| EP0790642A3 (en) * | 1996-02-02 | 1998-04-01 | Applied Materials, Inc. | Method and apparatus for removing contaminant particles from surfaces in semiconductor processing equipment |
| JP2002110515A (en) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | Dust collection method for pattern-drawing device |
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