JPH04168279A - Microwave plasma treating device - Google Patents

Abstract

PURPOSE:To form high-density plasma and to allow a high-speed treatment by providing waveguides and a microwave matching part larger than the internal size of the microwave introducing port of a treating chamber which generates plasma near the above-mentioned port. CONSTITUTION:The microwaves from a magnetron 3 are introduced through the waveguides 4a, 4b into the microwave introducing part 5 and are further supplied through a quartz window 6 into the treating chamber 1. A coil 2 is provided on the outside of this treating chamber 1 and the chamber is internally vacuum evacuated. An etching gas is supplied into the chamber and is maintained under a prescribed pressure. The plasma is formed in the treating chamber 1 and a material 8 to be treated on a sample base 7 connected to a high-frequency power source 9 is etched. The microwave matching part 5 of the above-mentioned microwave plasma treating device is disposed near the microwave introducing port of the treating chamber 1 and is constituted of a pipe having the size larger than the internal size of the waveguide 4a and the internal size of the above-mentioned port. The microwaves are efficiently supplied to the plasma in the treating chamber 1 to form the high-density plasma, by which the speed of the etching treatment is increased.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a microwave plasma device.

[Conventional technology]

Conventional devices are made of a waveguide for transmitting microwave power and a microwave-transparent material for introducing the microwave power into a reaction vessel, for example, as described in Ordinance No. 62-266820. The Hie reaction vessel had a structure in which a microwave cavity resonance chamber with a geometric structure that resonated with microwaves in an atmospheric pressure atmosphere was provided between the microwave introduction window that also served as the wall of the Hie reaction vessel. .

[Problem to be solved by the invention]

The above conventional technology does not take into consideration the matching of microwaves in a situation where plasma is generated in the reaction vessel, and there is a problem that the microwaves are not efficiently supplied to the plasma in the reaction vessel. there were.

The present invention enables high-density plasma to live by efficiently supplying microwaves to plasma in a reaction vessel, and enables high-speed plasma processing.
The purpose is to provide R.

c) Means for Solving the Problems] In order to achieve the above object, the internal dimensions of the waveguide and the inside of the microwave inlet of the processing chamber are adjusted in the vicinity of the microwave inlet of the processing chamber where microwaves are introduced and plasma is generated. A microwave matching means is provided which is constituted by a tube having an internal dimension larger than the dimensions.

[For production]

Microwave matching means (microwave matching section or microwave The wave matching device (wave matching device) functions so that microwaves are efficiently supplied to the plasma generated within the processing chamber. This generates high-density plasma and enables high-speed plasma processing.

In the case of cylindrical microwave matching parts and microwave matching devices that have an inner diameter larger than the inner diameter of the waveguide and the inner diameter of the microwave inlet of the processing chamber, the cross-sectional structure is U-shaped with respect to the central axis. It has a structure surrounded by conductive walls.

In other words, it has a structure similar to that of an EH tuner in a rectangular waveguide, and it can be easily understood that the cylindrical shape described above functions as a microwave matching section or a microwave matching device in a circular waveguide.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG.

FIG. 1 shows a magnetic field microwave dry filling apparatus which is an embodiment of the present invention. Container 1a.

Processing chamber l divided by discharge block tb and quartz window 6
After reducing the pressure inside the chamber using a vacuum evacuation device (not shown),
Etching gas is introduced into the processing chamber 1 by a gas supply device (not shown) and adjusted to a desired pressure. Also, processing room 1
is within the field of the magnetic field generated by the coil 2. Microwaves emitted from the magnetron 3, in this case 2.45 GHz, propagate within the waveguides 4a and 4b, pass through the cylindrical microwave matching s5, pass through the quartz window 6, and enter the processing chamber 1.
is injected into the interior. The material to be processed 8 placed on the sample stage 7 is etched by the plasma generated by the microwave. In addition, in order to control the etching shape of the material 8 to be processed, a high frequency [#9] is connected to the sample stage 7.
A high frequency voltage is applied.

In the case of this embodiment, since a circular waveguide is used as the waveguide 4b, the microwave matching section 5 has the inner diameter of the waveguide 4b and the processing chamber! It is constituted by a cylinder having an inner diameter larger than the inner diameter of the microwave introduction port b. The cross-sectional structure of the microwave matching section 5 is such that the central axis is surrounded by a U-shaped conductor wall. In other words, it has a structure similar to that of an EH tuner in a rectangular waveguide, and it can be easily understood that the cylindrical shape described above functions as a microwave matching section.

According to this embodiment, the microwave junction 5 can efficiently supply microwaves to the plasma generated in the processing chamber l, so that high-density plasma is generated and high-speed plasma processing is possible. .

Although not shown in the drawings, in the above embodiment, if the height or inner diameter of the cylindrical microwave matching section 5 can be adjusted, it can function as a microwave matching device.
For example, if it is necessary to frequently change plasma generation conditions such as gas pressure, matching can be easily achieved.

In the case of the above embodiment, a part of the conductor wall of the processing chamber 1 was used to constitute the microwave matching section 5, but as in the case of the second embodiment shown in FIG. Even if a microwave matching device 5' is configured and connected to the processing chamber l via the quartz window 6, the same effects as in the above embodiment can be obtained.

Furthermore, in the case of the embodiments - and 'M2 above, the cross-sectional shape of the microwave matching section 5 was made into a U-shape with respect to the central axis, but in the case of the third embodiment shown in FIG. Even if the microwave propagation region in the cross-sectional view of the microwave matching section 5' is L-shaped with respect to the central axis, or T-shaped (not shown), the same effect as in the above embodiment can be obtained. is obtained.

Further, in each of the above embodiments, a magnetic field dry etching apparatus has been described, but similar effects can be obtained with other plasma processing apparatuses such as dry etching apparatuses, plasma CVD apparatuses, and ashing apparatuses that utilize microwaves. .

〔Effect of the invention〕

According to the present invention, efficient microwaves can be supplied to plasma generated in a processing chamber, so that high-density plasma is generated and high-speed plasma processing becomes possible.

[Brief explanation of drawings]

FIG. 1 is a longitudinal sectional view of a processing chamber of a magnetic field microwave dry etching apparatus according to an embodiment of the present invention, and FIGS. FIG. 7 is a longitudinal cross-sectional view of a processing chamber of a magnetic field microwave dry etching sIH according to a third embodiment; 1...processing chamber, 2...coil, 3...
Listening magnetron, 4... Waveguide, 5...
・Microwave matching section, 6...Quartz window, 7...
... Sample stand, 8... Material to be treated, 9...
・High frequency power supply, - Agent Patent attorney Masaru Ogawa Ojino' = t/ Figure';

Claims (4)

[Claims] 1. In a plasma processing device that consists of a plasma generator that uses microwaves, a processing chamber that can reduce pressure, a gas supply device, and a vacuum exhaust device, a waveguide is installed near the microwave inlet of the processing chamber where microwaves are introduced and plasma is generated. 1. A microwave plasma processing apparatus comprising a microwave matching means constituted by a tube having an internal dimension larger than that of the microwave inlet of the processing chamber. 2. The microwave plasma processing apparatus according to claim 1, wherein the microwave matching means has a cylindrical shape having an inner diameter larger than the inner diameter of the waveguide and the inner diameter of the microwave inlet of the processing chamber. 3. 3. The microwave plasma processing apparatus according to claim 2, wherein in the microwave matching means having a cylindrical shape, matching is achieved by adjusting the height of the cylinder. 4. 3. The microwave plasma processing apparatus according to claim 2, wherein in the microwave matching means having a cylindrical shape, matching is achieved by adjusting the inner diameter of the cylinder.