JPH04167577A - Manufacture of superconductive wiring - Google Patents
Manufacture of superconductive wiringInfo
- Publication number
- JPH04167577A JPH04167577A JP2294294A JP29429490A JPH04167577A JP H04167577 A JPH04167577 A JP H04167577A JP 2294294 A JP2294294 A JP 2294294A JP 29429490 A JP29429490 A JP 29429490A JP H04167577 A JPH04167577 A JP H04167577A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- barrier layer
- superconducting
- oxide
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000010409 thin film Substances 0.000 claims abstract description 48
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000012466 permeate Substances 0.000 claims description 2
- 239000012212 insulator Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 25
- 239000011241 protective layer Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は＾超電導配線の作製方法に関する。より詳細に
は、本発明は、基板上に搭載された酸化物超電導薄膜に
より形成された超電導配線を作製する方法であって、配
線の平坦化に有利な新規な方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for producing superconducting wiring. More specifically, the present invention relates to a method for manufacturing a superconducting wiring formed of an oxide superconducting thin film mounted on a substrate, and relates to a novel method that is advantageous for flattening the wiring.
従来の技術
従来知られていた超電導材料は、一般に液体ヘリウムの
沸点以下の極低温でしか超電導体にならなかったので、
これを実用的に利用することはあまり考えられていなか
った。しかしながら、［：Ｌａ。Conventional technology Previously known superconducting materials generally became superconductors only at extremely low temperatures below the boiling point of liquid helium.
Little thought has been given to putting this to practical use. However, [:La.
Ｂａ） ２ＣＬＩ０４あるいはＣＬａ、 ＳｒＥ ２Ｃ
ＬＩ０４等の複合酸化物焼結体が高い臨界温度を有する
超電導材料であることが１９８６年に見出されて以来、
Ｙ −Ｂａ −Ｃｕ系あるいはＢｉ −Ｃａ−３ｒ−Ｃ
ｕ系等の複合酸化物が極めて高い温度範囲で超電導特性
を示すことが次次に確認された。このような高い温度で
超電導特性を示す超電導材料は廉価な液体窒素を冷却媒
体として使用することができるので、超電導技術の応用
が俄かに現実的な課題として検討されるようになった。Ba) 2CLI04 or CLa, SrE 2C
Since it was discovered in 1986 that composite oxide sintered bodies such as LI04 are superconducting materials with high critical temperatures,
Y-Ba-Cu system or Bi-Ca-3r-C
It has been confirmed one after another that composite oxides such as U-based oxides exhibit superconducting properties in extremely high temperature ranges. Superconducting materials that exhibit superconducting properties at such high temperatures can use inexpensive liquid nitrogen as a cooling medium, so the application of superconducting technology suddenly began to be considered as a realistic issue.
当初、これらの複合酸化物系超電導材料は、固相反応法
による焼結体として合成されていたが、その後の研究の
進捗により、今日では、種々の方法により薄膜として作
製することで、極狛で品質の高いものが得られるように
なってきた。そこで、酸化物超電導薄膜により、赤外線
センサ、トランジスタ等の種々の素子や、これらの素子
を組み合わせて構成される集積回路等の開発が各方面で
検討されている。Initially, these composite oxide-based superconducting materials were synthesized as sintered bodies using a solid-phase reaction method, but with the progress of subsequent research, today they can be fabricated as thin films using various methods, making them extremely durable. It has become possible to obtain high quality products. Therefore, the development of various elements such as infrared sensors and transistors and integrated circuits constructed by combining these elements using oxide superconducting thin films is being studied in various fields.
発明が解決しようとする課題
酸化物超電導薄膜により形成された超電導電流路を含む
超電導回路においては、その配線も酸化物超電導薄膜に
より形成することが考えられるが、実際には、集積回路
中の配線を酸化物超電導薄膜により形成する具体的な技
術は確立されていない。Problems to be Solved by the Invention In a superconducting circuit including a superconducting current path formed of an oxide superconducting thin film, it is conceivable that the wiring is also formed of an oxide superconducting thin film, but in reality, the wiring in an integrated circuit A specific technology for forming oxide superconducting thin films has not been established.
そこで、本発明は、上ｇ己従来技術の問題点を解決し、
酸化物超電導薄膜を材料として形成された超電導配線の
新規な作製方法を提供することをその目的としている。Therefore, the present invention solves the problems of the prior art, and
The purpose of this invention is to provide a novel method for manufacturing superconducting interconnects formed using oxide superconducting thin films.
課題を解決するための手段
即ち、本発明に従うと、基板上に搭載された酸化物超電
導薄膜により形成された超電導電配線を作製する方法で
あって、基板上全体に、該基板の成膜面に対して結晶の
ａ軸が直角に配向した酸化物超電導薄膜を成膜する工程
と、該酸化物超電導薄膜上に、酸素を透過しない材料に
より形成され、所望の配線パターンに従ってパターニン
グされた障壁層を形成する工程と、該障壁層を搭載した
酸化物超電導薄膜を脱酸素処理に付す工程とを含むこと
を特徴とする超電導配線の作製方法が提供される。Means for Solving the Problems According to the present invention, there is provided a method for producing a superconducting wiring formed of an oxide superconducting thin film mounted on a substrate, the method comprising: forming a superconducting wiring layer on the entire surface of the substrate; a step of forming an oxide superconducting thin film in which the a-axis of the crystal is oriented at right angles to the oxide superconducting thin film, and a barrier layer formed of a material that does not permeate oxygen and patterned according to a desired wiring pattern on the oxide superconducting thin film. Provided is a method for producing a superconducting interconnection, comprising the steps of: forming a barrier layer; and subjecting an oxide superconducting thin film carrying the barrier layer to deoxidation treatment.
作用
本発明に係る超電導配線の作製方法は、基板上全体に一
旦形成された酸化物超電導薄膜に対して、所望のパター
ンに従ってパターニングした障壁層を形成した上で脱酸
素処理を行ってパターニングすることをその主要な特徴
としている。Function: The method for producing superconducting wiring according to the present invention involves forming a barrier layer patterned according to a desired pattern on an oxide superconducting thin film once formed on the entire substrate, and then performing deoxidation treatment and patterning. is its main feature.
即ち、酸化物超電導薄膜を材料として超電導配線を作製
する場合、一般的には、超電導薄膜自体をエツチング等
によりパターニングして配線化することが一般的である
。しかしながら、このような方法で作製した超電導配線
は、表面が平坦ではなく、更に、−旦作製した後に配線
の表面を平坦化することは難しい。That is, when producing superconducting wiring using an oxide superconducting thin film as a material, generally the superconducting thin film itself is patterned by etching or the like to form the wiring. However, the surface of the superconducting interconnect produced by such a method is not flat, and furthermore, it is difficult to flatten the surface of the interconnect after it has been produced.
これに対して、本発明に係る方法は、酸化物超電導薄膜
上に、酸素の透過に対して有効な障壁となる材料により
、所望の配線パターンに従ってパターニングされた障壁
層を形成した後、酸化物超電導薄膜の脱酸素処理を行っ
て超電導配線のパターニングを行う。In contrast, the method according to the present invention involves forming a barrier layer patterned according to a desired wiring pattern on an oxide superconducting thin film using a material that is an effective barrier to oxygen permeation, and then The superconducting thin film is deoxidized and superconducting wiring is patterned.
このような方法によれば、−旦形成した酸化物超電導薄
膜を物理的に除去するような加工を伴わないので、超電
導配線の表面は平坦である。従って、この超電導配線上
に他の層を形成する場合にも、また、他の素子を搭載す
る場合にも、取扱いは非常に容易である。According to such a method, the surface of the superconducting wiring is flat because no processing such as physically removing the oxide superconducting thin film once formed is required. Therefore, handling is very easy even when forming other layers on this superconducting wiring or when mounting other elements.
ここで、本発明者等の知見によれば、酸化物超電導薄膜
内での酸素の拡散速度は、Ｃ軸方向には遅く、Ｃ軸方向
に速いことが判明している。そこで、上述のような本発
明に係る超電導配線の作製方法においては、超電導配線
となる酸化物超電導薄膜として、ａ軸配向膜を使用する
ことが有利である。即ち、ａ軸配向膜を使用することに
より、処理時間を短縮することができると共に、微細な
パターニングが可能になる。According to the findings of the present inventors, it has been found that the diffusion rate of oxygen within the oxide superconducting thin film is slow in the C-axis direction and fast in the C-axis direction. Therefore, in the method for manufacturing a superconducting interconnect according to the present invention as described above, it is advantageous to use an a-axis oriented film as the oxide superconducting thin film that becomes the superconducting interconnect. That is, by using the a-axis alignment film, processing time can be shortened and fine patterning can be achieved.
以上のような本発明に係る方法は、Ｙ −Ｂａ −［：
ｕ−〇系、Ｂｉ −３ｒ −Ｃａ−Ｃｕ−○系、ＴＩ
−Ｂａ −Ｃａ −Ｃｕ−０系等の複合酸化物超電導材
料の薄膜による超電導配線の作製に適用することができ
る。The method according to the present invention as described above is characterized in that Y-Ba-[:
u-○ system, Bi-3r-Ca-Cu-○ system, TI
It can be applied to the production of superconducting wiring using a thin film of composite oxide superconducting material such as -Ba-Ca-Cu-0 system.
以下、実施例を挙げて本発明をより具体的に説明するが
、以下の開示は本発明の一実施例に過ぎず、本発明の技
術的範囲を何ら限定するものではない。EXAMPLES Hereinafter, the present invention will be described in more detail with reference to Examples, but the following disclosure is merely an example of the present invention and does not limit the technical scope of the present invention in any way.
実施例
第１図は、本発明に係る超電導配線の作製方法を工程毎
に示した図である。Embodiment FIG. 1 is a diagram showing each step of a method for manufacturing a superconducting wiring according to the present invention.
まず、第１図（ａ）に示すような平坦な基板１を用意す
る。本実施例では、ＭｇＯ単結晶基板を、（１００）面
を成膜面として使用したが、その他、ＣｄＮｄＡ１０．
（００１）基板等を使用できる。また、適切なバッフ
ァ層を搭載した８１基板等も使用できる。First, a flat substrate 1 as shown in FIG. 1(a) is prepared. In this example, the (100) plane of the MgO single crystal substrate was used as the film formation surface, but the CdNdA10.
(001) substrate etc. can be used. Further, an 81 substrate or the like equipped with an appropriate buffer layer can also be used.
上述のような基板１に対して、第１図（ｂ）に示すよう
に、厚さ２００ｎｍ以上の酸化物超電導薄膜２を成膜し
た。成膜は、オファクシススバッタリング法や反応性蒸
着法により成膜することができるが、本実施例では、＾
ｒと０２とを９＝１の割合で混合した１０Ｐａのスパッ
タガスの下で、オファクシススバッタリング法により成
膜した。基板温度は６５０℃を越えないようにし、形成
された酸化物超電導薄膜がａ軸配向するようにした。As shown in FIG. 1(b), an oxide superconducting thin film 2 having a thickness of 200 nm or more was formed on the substrate 1 as described above. The film can be formed by oxidation sputtering method or reactive vapor deposition method, but in this example,
A film was formed by an off-axis sputtering method under a sputtering gas of 10 Pa in which r and 02 were mixed at a ratio of 9=1. The substrate temperature was set not to exceed 650° C. so that the formed oxide superconducting thin film was oriented along the a-axis.
次に、第１図（Ｃ）に示すように、酸化物超電導薄膜２
上に、障壁層３を成膜する。障壁層３の材料としては、
ＭｇＯ、ＳｉＮ、＾Ｕ等を適宜選択して使用することが
できる。Next, as shown in FIG. 1(C), the oxide superconducting thin film 2
A barrier layer 3 is formed thereon. As the material of the barrier layer 3,
MgO, SiN, ^U, etc. can be appropriately selected and used.
次に、第１図（６）に示すように、公知のフォトリソグ
ラフィ法により、障壁層３をパターニングする。ここで
障壁層３に形成するパターンは、二連的に必要な超電導
配線の配線パターンと同じものである。こうして、酸化
物超電導薄膜２上には、超電導配線と同じパターンにパ
ターニングされた障壁層３ａが形成される。Next, as shown in FIG. 1(6), the barrier layer 3 is patterned by a known photolithography method. The pattern formed in the barrier layer 3 here is the same as the wiring pattern of the superconducting wiring that is required in two series. In this way, a barrier layer 3a patterned in the same pattern as the superconducting wiring is formed on the oxide superconducting thin film 2.
続いて、パターニングされた障壁層３ａを搭載した酸化
物超電導薄膜２に対して、第１図（ｅ）に示すように脱
酸素処理を行う。本実施例では、脱酸素処理として、超
高真空雰囲気中で基板を４００℃未満に加熱して１時間
保持する処理を行った。このような処理により、酸化物
超電導薄膜２中には絶縁化領域２ａが形成される。換言
すれば、障壁層３ａによりマスクされていた領域は絶縁
化されず、この領域が超電導配線となる。Subsequently, the oxide superconducting thin film 2 carrying the patterned barrier layer 3a is subjected to deoxidation treatment as shown in FIG. 1(e). In this example, as deoxidation treatment, the substrate was heated to less than 400° C. in an ultra-high vacuum atmosphere and held for one hour. Through such treatment, an insulating region 2a is formed in the oxide superconducting thin film 2. In other words, the region masked by the barrier layer 3a is not insulated, and this region becomes a superconducting wiring.
こうして形成された超電導配線をそのまま単層で使用す
る場合は、第１図（ｆ−１） に示すように、障壁層３
ａを除去した後に、適切な保護層４により酸化物超電導
薄膜２の表面を被覆して使用することが好ましい。When using the superconducting wiring formed in this way as a single layer, as shown in Figure 1 (f-1), the barrier layer 3
After removing a, it is preferable to cover the surface of the oxide superconducting thin film 2 with a suitable protective layer 4 before use.
一方、更に上層に酸化物超電導薄膜を成膜して多層構造
の回路を作製する場合は、以下のような形成方法も実施
できる。On the other hand, in the case where a multilayer structure circuit is produced by further forming an oxide superconducting thin film as an upper layer, the following formation method can also be implemented.
即ち、第１図（ｅ）に示した工程の後に、第１図（ｆ−
２） に示すように、障壁層３ａを残したまま、保護層
４を全体に形成する。続いて、第１図（（イ）に示すよ
うに、保護層４と障壁層３ａとを併せてエッチバックし
表面を平坦化する。このとき、表面に残る保護層４およ
び障壁層３ａは、できるだけ薄くすることが有利である
。尚、エッチバック処理は、反応性イオンエツチングや
イオンミリング等の方法を有利に適用することができる
。That is, after the step shown in FIG. 1(e), the step shown in FIG.
2) As shown in 2), the protective layer 4 is formed on the entire surface while leaving the barrier layer 3a. Subsequently, as shown in FIG. 1 (A), the protective layer 4 and the barrier layer 3a are etched back together to flatten the surface. At this time, the protective layer 4 and the barrier layer 3a remaining on the surface are It is advantageous to make it as thin as possible. Note that methods such as reactive ion etching and ion milling can be advantageously applied to the etch-back treatment.
最後に、第１図口に示すように、上層の配線または素子
の材料となる第２の酸化物超電導薄膜を成膜する。Finally, as shown in the opening of FIG. 1, a second oxide superconducting thin film is formed, which will become the material for the upper wiring or element.
このとき、保護層４は、層間絶縁膜として機能する。ま
た、第１の酸化物超電導薄膜２上に残る障壁層３ａを充
分に薄くしておくことにより、第１の酸化物超電導薄膜
２による超電導配線ど、第２の超電導薄膜５とを、近接
効果で実質的に接続させることもできる。このためには
、残留する障壁層３ａの厚さを充分に薄くする必要があ
る。また、障壁層３ａの材料として絶縁体を使用した場
合は、トンネル効果が得られるように、残留する障壁層
３ａの厚さをｌＱｎｍ以下とすることが望ましい。At this time, the protective layer 4 functions as an interlayer insulating film. Furthermore, by making the barrier layer 3a remaining on the first oxide superconducting thin film 2 sufficiently thin, the proximity effect between the first oxide superconducting thin film 2 and the second superconducting thin film 5, such as superconducting wiring, etc. It is also possible to make a substantial connection. For this purpose, it is necessary to make the remaining barrier layer 3a sufficiently thin. Furthermore, when an insulator is used as the material for the barrier layer 3a, it is desirable that the thickness of the remaining barrier layer 3a be 1Q nm or less so that a tunnel effect can be obtained.
発明の詳細
な説明したように、本発明によれば、酸化物超電導薄膜
により形成された超電導配線を、簡単な工程で作製する
ことが可能になる。DETAILED DESCRIPTION OF THE INVENTION As described in detail, according to the present invention, a superconducting wiring formed of an oxide superconducting thin film can be manufactured through a simple process.
ここで、本発明の方法に従って作製された超電導配線は
、その表面が平坦で取扱いが容易である。Here, the superconducting wiring produced according to the method of the present invention has a flat surface and is easy to handle.
また、超電導配線相互の間が、超電導配線と実質的に同
じ材料によって充填されているので、超電導配線の機械
的な強度も高く、この点げも取扱いに便利である。In addition, since the spaces between the superconducting wires are filled with substantially the same material as the superconducting wires, the mechanical strength of the superconducting wires is high, and the blemishes are also convenient to handle.
第１図は、本発明に係る超電導配線の作製方法を工程毎
に示す図である。
〔主な参照番号〕
１・・・基板、
２．５・・・酸化物超電導薄膜、
２ａ・・・絶縁化領域、
３．３ａ・・・障壁層、
４・・・保護層
特許出願人 住友電気工業株式会社FIG. 1 is a diagram showing each step of a method for manufacturing a superconducting wiring according to the present invention. [Main reference numbers] 1...Substrate, 2.5...Oxide superconducting thin film, 2a...Insulating region, 3.3a...Barrier layer, 4...Protective layer Patent applicant Sumitomo Denki Kogyo Co., Ltd.
Claims (1)
た超電導電配線を作製する方法であって、基板上全体に
、該基板の成膜面に対して結晶のａ軸が直角に配向した
酸化物超電導薄膜を成膜する工程と、該酸化物超電導薄
膜上に、酸素を透過しない材料により形成され、所望の
配線パターンに従ってパターニングされた障壁層を形成
する工程と、該障壁層を搭載した酸化物超電導薄膜を脱
酸素処理に付す工程とを含むことを特徴とする超電導配
線の作製方法。A method for producing a superconducting wiring formed by an oxide superconducting thin film mounted on a substrate, the method comprising: forming an oxide on the entire substrate with the a-axis of the crystal oriented perpendicular to the film formation surface of the substrate; a step of forming a superconducting thin film, a step of forming a barrier layer made of a material that does not permeate oxygen and patterned according to a desired wiring pattern on the oxide superconducting thin film, and an oxide on which the barrier layer is mounted. 1. A method for producing a superconducting wiring, comprising the step of subjecting a superconducting thin film to deoxidation treatment.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2294294A JP2703403B2 (en) | 1990-10-31 | 1990-10-31 | Superconducting wiring fabrication method |
| EP91402931A EP0484248B1 (en) | 1990-10-31 | 1991-10-31 | A novel superconducting circuit and a process for fabricating the same |
| EP95108249A EP0671764A2 (en) | 1990-10-31 | 1991-10-31 | A process for fabricating a superconducting circuit |
| CA002185936A CA2185936A1 (en) | 1990-10-31 | 1991-10-31 | Process for fabricating a superconducting circuit |
| CA002054597A CA2054597C (en) | 1990-10-31 | 1991-10-31 | Superconducting circuit and a process for fabricating the same |
| DE69124072T DE69124072T2 (en) | 1990-10-31 | 1991-10-31 | Superconducting circuit and method for its production |
| US08/400,813 US5672569A (en) | 1990-10-31 | 1995-03-08 | Process for fabricating a superconducting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2294294A JP2703403B2 (en) | 1990-10-31 | 1990-10-31 | Superconducting wiring fabrication method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04167577A true JPH04167577A (en) | 1992-06-15 |
| JP2703403B2 JP2703403B2 (en) | 1998-01-26 |
Family
ID=17805837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2294294A Expired - Lifetime JP2703403B2 (en) | 1990-10-31 | 1990-10-31 | Superconducting wiring fabrication method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2703403B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017500756A (en) * | 2013-11-12 | 2017-01-05 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | Integrated superconductor device and manufacturing method thereof |
| US10158061B2 (en) | 2013-11-12 | 2018-12-18 | Varian Semiconductor Equipment Associates, Inc | Integrated superconductor device and method of fabrication |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01106492A (en) * | 1987-10-20 | 1989-04-24 | Mitsubishi Electric Corp | Manufacture of superconductive wiring substrate |
| JPH01161789A (en) * | 1987-12-17 | 1989-06-26 | Mitsubishi Electric Corp | Formation of josephson junction |
| JPH01183496A (en) * | 1988-01-14 | 1989-07-21 | Nec Corp | Production of single crystal oxide superconducting thin film |
-
1990
- 1990-10-31 JP JP2294294A patent/JP2703403B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01106492A (en) * | 1987-10-20 | 1989-04-24 | Mitsubishi Electric Corp | Manufacture of superconductive wiring substrate |
| JPH01161789A (en) * | 1987-12-17 | 1989-06-26 | Mitsubishi Electric Corp | Formation of josephson junction |
| JPH01183496A (en) * | 1988-01-14 | 1989-07-21 | Nec Corp | Production of single crystal oxide superconducting thin film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017500756A (en) * | 2013-11-12 | 2017-01-05 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | Integrated superconductor device and manufacturing method thereof |
| US10158061B2 (en) | 2013-11-12 | 2018-12-18 | Varian Semiconductor Equipment Associates, Inc | Integrated superconductor device and method of fabrication |
| US10290399B2 (en) | 2013-11-12 | 2019-05-14 | Varian Semiconductor Equipment Associates, Inc. | Integrated superconductor device and method of fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2703403B2 (en) | 1998-01-26 |
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