JPH0416592A - Superconducting thin film of bi oxide - Google Patents
Superconducting thin film of bi oxideInfo
- Publication number
- JPH0416592A JPH0416592A JP2119235A JP11923590A JPH0416592A JP H0416592 A JPH0416592 A JP H0416592A JP 2119235 A JP2119235 A JP 2119235A JP 11923590 A JP11923590 A JP 11923590A JP H0416592 A JPH0416592 A JP H0416592A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- class
- superconductor
- axis length
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 36
- 239000002887 superconductor Substances 0.000 claims abstract description 22
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- -1 lO3 Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910002331 LaGaO3 Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 208000025865 Ulcer Diseases 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 102000054765 polymorphisms of proteins Human genes 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 231100000397 ulcer Toxicity 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000002424 x-ray crystallography Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野Ｊ 本発明はＢｉｉ酸化物超伝導薄膜に関し、特に。[Detailed description of the invention] [Industrial Application Field J The present invention relates to Bii oxide superconducting thin films, and more particularly.
超伝導特性を有し、高い臨界温度を有するＢ１−Ｐｂ−
５ｒ−Ｃａ−Ｃｕ−０系及びＢ１−５ｒ−Ｃａ−Ｃｕ−
０系を含むＢｉ系紐伝導潰膜に関するものである。B1-Pb- has superconducting properties and a high critical temperature
5r-Ca-Cu-0 system and B1-5r-Ca-Cu-
This relates to Bi-based string conductive ulcers including 0-based.
〔従来の技術］
Ｂｉ系超超伝導体、臨界温度が１００Ｋ以上の優れた材
料であることは広く知られている。この材料は、前圧ら
により発見ＩＪａｐａｎｅｓｅ Ｊｏｕｒｎａｌ ｏｆ
Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ、 ２７１１９８８１
．Ｌ２０９〜２１０１されて以来、電子材料及びデバイ
ス等へ応用するために。[Prior Art] It is widely known that Bi-based superconductors are excellent materials with critical temperatures of 100 K or higher. This material was discovered by Zeno et al. in the Japanese Journal of
Applied Physics, 27119881
．． Since L209-2101, it has been applied to electronic materials and devices.
各所で１ｉｉｌＩｌｉ化が行われている。IilIli conversion is being carried out in various places.
しかしながら、この材料には１１ＯＫ級、８ＯＫ級及び
半導体相の三種類の多形が存在し、しかも１１０に級超
伝導体の生成温度領域が狭いため単相化が難しい、従来
、単相１１０に縁起伝導薄膜を合成するには、熱処理前
の組成としてほぼＢｉ：Ｐｂ：Ｓｒ：Ｃａ：Ｃｕ＝１：
ｌ：Ｉ＋ｌ：１．５若しくはＣａを過剰に加えた薄膜を
約８５（１℃で熱処理していた（例えばＪａｐａｎｅｓ
ｅＪｏｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉ
ｃｓ、 ２８ｆ１９８９１． ＬａＩ３〜８２２）。However, this material has three types of polymorphism: 11OK class, 8OK class, and semiconductor phase.Moreover, the formation temperature range of 110 class superconductors is narrow, so it is difficult to make it into a single phase. To synthesize an edge-induced conductive thin film, the composition before heat treatment is approximately Bi:Pb:Sr:Ca:Cu=1:
l:I+l:1.5 or a thin film with excess Ca added was heat-treated at about 85℃ (1℃ (for example, Japanese
eJournal of Applied Physi
cs, 28f19891. LaI3-822).
〔発明が解決しようとする課ＨＪ
薄膜中に生成した板状の１１０に級超伝導体のＣ軸長と
臨界温度の関係についての報告は少ないが。[Problem to be solved by the invention HJ There are few reports on the relationship between the C-axis length and critical temperature of plate-like 110-class superconductors formed in thin films.
例えばＪａｐａｎｅｓｅ Ｊｏｕｒｎａｌ ｏｆ Ａｐ
ｐｌｉｅｄ Ｐｈｙｓｉｃｓ、２８ｆ１９８９１． Ｌ
６４６〜６４９にＣ軸の格子定数が小さいほど臨界温度
が高いと報告されている。For example, Japanese Journal of Ap
plied Physics, 28f19891. L
646-649, it is reported that the smaller the lattice constant of the C axis, the higher the critical temperature.
本発明の目的は、多形の存在する超伝導薄膜について、
薄膜中の１１ＯＫ級超伝導体のＣ軸長と臨界温度との関
係から臨界温度の高いＢｉ系超伝導薄膜を提供しようと
するものである６
【課題を解決するための手段］
本発明者らは、製造した薄膜を種々条件で熱処理を行い
、得られた薄膜のＣ軸長と臨界温度の関係を調べた結果
、単相１１０に縁起伝導体の合成にこだわることなく、
生成薄膜中の１１ＯＫ級超伝導体相のＣ軸長によって、
高臨界温度の超伝導薄膜を選択できることを見出して１
本発明を完成するに到った。The purpose of the present invention is to provide superconducting thin films containing polymorphisms,
This is an attempt to provide a Bi-based superconducting thin film with a high critical temperature based on the relationship between the C-axis length of the 11OK class superconductor in the thin film and the critical temperature6 [Means for solving the problem] The present inventors conducted heat treatment on the manufactured thin film under various conditions and investigated the relationship between the C-axis length and critical temperature of the obtained thin film, and found that without being particular about the synthesis of an originating conductor in a single phase 110,
Depending on the C-axis length of the 11OK class superconductor phase in the produced thin film,
Discovering that it is possible to select superconducting thin films with high critical temperatures 1
The present invention has now been completed.
すなわち、本発明は、Ｂｉ、Ｐｂ、Ｓｒ、Ｃａ及びＣｕ
、又はＢｉ、Ｓｒ、Ｃａ及びＣｕを含む（ＢｕＰｂｌ
２ｓｒ２ｃａｚｃｕ３Ｄｍ構造の１１ＯＫ級酸化物超伝
導体と、 ｆＢｉ＋Ｐｂ１ｚｓｒ、ｃａ、Ｃｕ２低構
造の８ＯＫ級酸化物超伝導体から構成され、その組成が
。That is, the present invention provides Bi, Pb, Sr, Ca and Cu.
, or containing Bi, Sr, Ca and Cu (BuPbl
It is composed of an 11 OK class oxide superconductor with a 2sr2cazcu3Dm structure and an 8OK class oxide superconductor with a fBi+Pb1zsr, ca, Cu2 low structure, and its composition is as follows.
ＢｔａＰｂｂＳｒ＋ ｏｏｃａｃｃｕａ低であって１
組成中のａ、ｂ、ｃ及びｄが、０５≦ａ≦１．２
０．０≦ｂ≦１．２
０４≦ｃ≦１．３
１．３≦ｄ≦２．０
である薄膜において、 １１ＯＫ級酸化物超伝導体のＣ
軸長が３．７１００ｎｍ以上であることを特徴とする臨
界温度が１００に以上のＢｉ系超伝導薄膜である。BtaPbbSr+ oocaccua low and 1
In a thin film in which a, b, c and d in the composition are 05≦a≦1.2 0.0≦b≦1.2 04≦c≦1.3 1.3≦d≦2.0, 11OK C of class oxide superconductor
A Bi-based superconducting thin film having an axial length of 3.7100 nm or more and a critical temperature of 100 or more.
以下詳細に説明する。This will be explained in detail below.
〔作用１
１１０に縁起伝導体結晶の（Ｂｚ ＋ｐｂ） ｚｓｒｚ
ｃａｚｃｕ３０ｘ構造は、８ＯＫ縁起伝導体結晶の（Ｂ
ｉ＋Ｐｂｌ ｚｓｒｚｃａ１ｃｕｚ帆構造中のＣ軸方向
に垂直な面にＣａ層とＣｕ−０層が入り込んで構成され
る。その際、Ｃａ層とＣｕ−０層が十分に入り込まない
と、１１ＯＫ級超伝導体としての特性が発揮されない。[Effect 1 110 of (Bz + pb) zsrz of the originating conductor crystal
The cazcu30x structure consists of (B
i+Pbl zsrzca1cuz It is composed of a Ca layer and a Cu-0 layer inserted into a plane perpendicular to the C-axis direction in the sail structure. At that time, unless the Ca layer and the Cu-0 layer are sufficiently penetrated, the properties as an 11OK class superconductor will not be exhibited.
また、 Ｃａ層とＣｕ−０層が理論組成よりも多く結晶
構造中に取り込まれると、１１０に縁起伝導体の特性よ
りも落ちる。すなわち。In addition, when more Ca layers and Cu-0 layers are incorporated into the crystal structure than the theoretical composition, the properties fall below that of an originating conductor to 110. Namely.
１１０に縁起伝導体の結晶構造であっても、Ｃ軸長が３
．７１００ｎｍ以上でないと部分的に８ＯＫ縁起伝導体
が含まれることになり、抵抗曲線は低温側に裾を弓き、
臨界温度が低下する。Even if the crystal structure of an originating conductor is 110, the C-axis length is 3.
．． If it is not 7100 nm or more, 8OK fringe conductor will be partially included, and the resistance curve will curve toward the low temperature side.
Critical temperature decreases.
得られるＢｉ系超伝導薄膜の１１ＯＫ級超伝導体結晶と
してそのＣ軸長が３．７１０（ｌｎ５１以上のものを合
成する超伝導薄膜製造方法については、後記する製造方
法において、薄膜組成、特にＣａ／Ｓｒ原子比、焼成温
度、焼成時間等が相互に影響しあっていると考えられる
。The resulting Bi-based superconducting thin film has a C-axis length of 3.710 (ln51 or more) as an 11OK-class superconductor crystal. It is considered that the /Sr atomic ratio, firing temperature, firing time, etc. influence each other.
本発明における薄膜の製造方法は、スパッタリング法、
蒸着法等の物理的手法により行われる。The thin film manufacturing method in the present invention includes sputtering method,
This is done by physical methods such as vapor deposition.
薄膜を製造する際、スパッタリングターゲットの数及び
蒸着源の数は特に限定しない、つまり、基板上に堆積し
た薄膜の組成が上記の範囲であればよい。When manufacturing a thin film, the number of sputtering targets and the number of evaporation sources are not particularly limited, as long as the composition of the thin film deposited on the substrate is within the above range.
Ｂｉは０．５より少ないと超伝導体の結晶構造が構成さ
れにくく、１．２より多いと８ＯＫ縁起伝導体と半導体
相を生成する。ｐｂも１．２より多いと８ＯＫ縁起伝導
体と半導体相を生成し易い、 Ｃａは０．４より少ない
と半導体相を生成し、１．３より多いと１１０に相は生
成するが、ＣａＣｕｚＬやＣａ−Ｃｕｂ、などの不純物
相が同時に生成するため、臨界１度が低下する。Ｃｕは
１．３より少ないと８ＯＫ縁起伝導体を生成し、２．０
より多いと８ＯＫ縁起伝導体と半導体を生成する。When Bi is less than 0.5, it is difficult to form a superconductor crystal structure, and when it is more than 1.2, an 8OK originating conductor and a semiconductor phase are generated. When pb is more than 1.2, it is easy to form an 8OK conductor and a semiconductor phase, when Ca is less than 0.4, a semiconductor phase is formed, and when it is more than 1.3, a 110 phase is formed, but CaCuzL and Since impurity phases such as Ca-Cub are generated at the same time, the critical degree is lowered. Cu less than 1.3 produces an 8OK fringe conductor, and less than 2.0
If the amount is larger, 8OK originating conductors and semiconductors are produced.
用いられる基板としては、熱処理中に４Ｍ中の元素と反
応しないＭｇＯ、ＳｒＴｉＯ３、ＬａＧａＯ３、ＬａＡ
ｌＯ３等の酸化物単結晶、Ａｇ、 Ａｕ、・Ｐｊ、Ｃｕ
等の多結晶金属、Ｓｌ、ＧａＡｓ等の半導体、又はこれ
らを組み合わせたものなどが使用される。The substrates used include MgO, SrTiO3, LaGaO3, and LaA, which do not react with the elements in 4M during heat treatment.
Oxide single crystals such as lO3, Ag, Au, ・Pj, Cu
Polycrystalline metals such as, semiconductors such as Sl, GaAs, or a combination thereof are used.
薄膜の厚さは、使用目的に合わせて製造し、好ましくは
０．１〜１ＯＩＩ１１程度がよい。薄膜の厚さが０、ｌ
ｌＩ＋ｍ以下だと熱処理後、超伝導粒子同志の結合が弱
くなり、ｌＯμ−以上だと膜の配向性が著しく低下し、
臨界電ｆｉＬ密度等の超伝導特性が低下する。The thickness of the thin film is determined depending on the purpose of use, and is preferably about 0.1 to 1OII11. The thickness of the thin film is 0, l
If it is less than lI+m, the bond between superconducting particles becomes weak after heat treatment, and if it is more than lOμ-, the orientation of the film will be significantly reduced.
Superconducting properties such as critical electric fiL density deteriorate.
薄膜製造の際、基板加熱は行っても行わなくてもよい。During thin film production, substrate heating may or may not be performed.
また、ターゲットの原料は、＃化物、炭酸化物、硝酸化
物等の無機化合物、又は、各単体の金属、二種類以上の
合金が用いられる。Further, as the raw material for the target, inorganic compounds such as oxides, carbonates, and nitrates, individual metals, or alloys of two or more types are used.
作製された薄膜は、結晶化させるために８００〜８６０
℃で５〜ｌ口０時間熱処理し、１１ＯＫ級超伝導体を合
成する。また、熱処理の前に７００〜８００℃で２〜Ｉ
Ｏ時間予め仮焼すると膜の特性が安定する。The produced thin film was heated to 800 to 860 to crystallize it.
Heat treatment is performed at ℃ for 5 to 1 hour to synthesize an 11 OK class superconductor. Also, before heat treatment, 2-I at 700-800℃
Preliminary calcination for O hours stabilizes the properties of the film.
熱処理後は、炉内で冷却する。熱処理は、空気中もしく
はＰｂＯの蒸気が存在する雰囲気等の酸素存在化で行う
。After heat treatment, it is cooled in a furnace. The heat treatment is performed in the presence of oxygen, such as in air or in an atmosphere containing PbO vapor.
［実施例１
以下の測定において１１ＯＫ級超伝導体結晶のＣ軸長は
、ｘ！１回折装置を用い、試料の回折線のうち１００２
１ 、１００６１ 、 ＋００８１ 、１００１０）
、 １００１４１ 、１００１６１ 。[Example 1 In the following measurements, the C-axis length of the 11OK class superconductor crystal is x! 1002 out of the diffraction lines of the sample using a diffractometer
1, 10061, +0081, 10010)
, 100141 , 100161 .
１００２４） 、 ＋００２６１ 、１００３２＋ 、
＋００３４１の回折ピーク位置を、Ｓｉ粉末を標準試
料として、その＋２２０１．１３１１１゜＋４００１
、 ＋３３１１ 、 ＋４２２１ 、 ＋３３３１の回
折角度から補正した。補正したピーク位置を面間隔ｄに
直して最小二乗法で計算した。計算には、Ｘ線結晶解析
用プロゲラ１ｈＵＮＩｃｓ Ｒ５ＬＣ−３を用イタ。10024) , +00261 , 10032+ ,
The diffraction peak position of +00341 is determined by +2201.13111°+4001 using Si powder as a standard sample.
, +3311, +4221, +3331 diffraction angles. The corrected peak position was converted into a surface spacing d and calculated using the least squares method. For calculations, Progera 1hUNIcs R5LC-3 for X-ray crystallography was used.
また、臨界温度は、クライオスタット中で四端子法によ
り測定した。Further, the critical temperature was measured in a cryostat using the four-terminal method.
超伝導薄膜の製造
スパッタリングターゲット
■ Ｂｉｏ、５Ｐｂｏ ｓＯ＋＋
第一のターゲットとしてＢ１２０−とＰｂＯの粉末を、
原子比でＢｉ：Ｐｂ＝ ｌ：１となるように配合し、メ
タノール中で２４時間混合して乾燥したもの。Superconducting thin film production sputtering target■ Bio, 5Pbo sO++ B120- and PbO powders are used as the first target.
Blend in an atomic ratio of Bi:Pb=l:1, mixed in methanol for 24 hours, and dried.
■ ＣａＣｕｏ、 ｙｓＬ
第二のターゲットとして、 ＣａＣＯ５とＣｕＯの粉末
を、原子比でＣａ：Ｃｕ＝１：０．７５に配合し、上記
方法と同様に混合した粉末を、９５０℃で１０時間空気
中で焼成し粉砕したもの。■ CaCuo, ysL As the second target, powders of CaCO5 and CuO were mixed in an atomic ratio of Ca:Cu=1:0.75, and the mixed powder was heated in the air at 950℃ for 10 hours. calcined and crushed.
■ ５ｒＣｕｏ、 ｙｓＯ＋＋
第三のターゲットとして、ＳｒＣＯ３とＣｕＯの粉末を
、原子比でＳｒ：Ｃｕ＝ ｌ：０．７５となる様に配合
し、上記方法と同様に混合した粉末を、９５０℃で１０
時間空気中で焼成し粉砕したもの。■ 5rCuo, ysO++ As the third target, powders of SrCO3 and CuO were blended so that the atomic ratio was Sr:Cu=l:0.75, and the mixed powder was heated at 950°C for 10
Calcined in air for an hour and then ground.
加熱されていないＭｇＯ単結晶基板上に、上記３種類の
ターゲットを用い、ＲＦパワーを１００ｗとして。The above three types of targets were used on an unheated MgO single crystal substrate, and the RF power was set to 100 W.
Ａ「ガスでスパッタリングし、各ターゲットの堆積が一
巡したら、これを４００回くり返して約２ｕ■の薄膜を
得た。A: After sputtering with a gas and completing one cycle of deposition for each target, this process was repeated 400 times to obtain a thin film of about 2u.
各ターゲットの一回の堆積時間は
■ Ｂｔｏ、５Ｐｂｎ ａＯ＋＋ ８秒■
ＣａＣｕｏ ｔｓＯ＋１ （５３，５÷Ｘ）秒■
５ｒＣｕｏ ｙｓＬ ！５３．５−Ｘ１秒とし、Ｘ
としてｌ０１５及び０を選び１次の三種類の組成の薄膜
を得た。The time for one deposition of each target is ■ Bto, 5Pbn aO++ 8 seconds■
CaCuo tsO+1 (53,5÷X) seconds■
5rCuoysL! 53.5-X1 seconds, X
1015 and 0 were selected as the 1015 and 0, and thin films with three types of first-order compositions were obtained.
Ａ） Ｘ：ｌＯ：ｌＢｉ＋Ｐｂｌ＋、ａ＊Ｓｒ＋、ｏｏ
Ｃａ＋ ＋ｔＣ１ｌ＋、ａｔＯ。A) X:lO:lBi+Pbl+, a*Sr+, oo
Ca+ +tC1l+, atO.
Ｂ） Ｘ” ５： ｌＢｉ＋Ｐｂ） １． ＊ｙＳｒ＋
、 ｏｏｃａｎ、 ５ｚｃｕ＋、 ｇｏｏ。B) X” 5: lBi+Pb) 1. *ySr+
, oocan, 5zcu+, goo.
ＣＩ Ｘ＝ ０： ｌＢｉ＋Ｐｂｌ ＋、 １ａｓｒ＋
、 ｏｏｃａｏ、 ５ｏｃｕ＋、 ｓＪｘ得られたそれ
ぞれの薄膜を８５０℃で、 １５時間。CI X= 0: lBi+Pbl+, 1asr+
, oocao, 5ocu+, sJx The obtained thin films were heated at 850°C for 15 hours.
２４時間及び６５時間熱処理した。Heat treatment was performed for 24 hours and 65 hours.
得られた超伝導薄膜について、各試料の１１０に縁起伝
導体のＣ軸長及び臨界温度を測定した結果を表−１に示
す。Regarding the obtained superconducting thin films, the C-axis length and critical temperature of the originating conductor of each sample were measured and the results are shown in Table 1.
表−１
（以下余白）
〔発明の効果Ｊ
本発明のＢＩ系酸化物超伝導薄換は、その薄膜を構成す
る１１ＯＫ級超伝導体結晶のＣ軸長が３．７１００ｎｍ
以上の場合、その臨界温度はＩｆｌＯＫ以上あり、優れ
た超伝導特性を示す。Table 1 (blank below) [Effects of the invention J The BI-based oxide superconducting thin film of the present invention has a C-axis length of 3.7100 nm of the 11OK class superconductor crystal constituting the thin film.
In the above case, the critical temperature is higher than IflOK, and exhibits excellent superconducting properties.
Claims (1)
ｒ、Ｃａ及びＣｕを含む（Ｂｉ＋Ｐｂ）＿２Ｓｒ＿２Ｃ
ａ＿２Ｃｕ＿３Ｏ＿ｘ構造の１１ＯＫ級酸化物超伝導体
と、（Ｂｉ＋Ｐｂ）＿２Ｓｒ＿２Ｃａ＿１Ｃｕ＿２Ｏ＿
ｘ構造の８ＯＫ級酸化物超伝導体から構成され、以下の
組成を有する薄膜において、１１ＯＫ級酸化物超伝導体
のｃ軸長が３．７１００ｎｍ以上であることを特徴とす
る臨界温度が１００ｋ以上のＢｉ系超伝導薄膜。 Ｂｉ＿ａＰｂ＿ｂＳｒ＿１＿．＿０＿０Ｃａ＿ｃＣｕ＿
ｄＯ＿ｘ０．５≦ａ≦１．２０．０≦ｂ≦１．２ ０．４≦ｃ≦１．３ １．３≦ｄ≦２．０(1) Bi, Pb, Sr, Ca and Cu, or Bi, S
(Bi+Pb)_2Sr_2C containing r, Ca and Cu
11OK class oxide superconductor with a_2Cu_3O_x structure and (Bi+Pb)_2Sr_2Ca_1Cu_2O_
A thin film composed of an 8 OK class oxide superconductor with an Bi-based superconducting thin film. Bi_aPb_bSr_1_. _0_0Ca_cCu_
dO_x0.5≦a≦1.20.0≦b≦1.2 0.4≦c≦1.3 1.3≦d≦2.0
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2119235A JP3038485B2 (en) | 1990-05-09 | 1990-05-09 | Bi-based oxide superconducting thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2119235A JP3038485B2 (en) | 1990-05-09 | 1990-05-09 | Bi-based oxide superconducting thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0416592A true JPH0416592A (en) | 1992-01-21 |
| JP3038485B2 JP3038485B2 (en) | 2000-05-08 |
Family
ID=14756310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2119235A Expired - Lifetime JP3038485B2 (en) | 1990-05-09 | 1990-05-09 | Bi-based oxide superconducting thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3038485B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110777434A (en) * | 2019-11-12 | 2020-02-11 | 中国工程物理研究院化工材料研究所 | Mixed anion infrared nonlinear optical crystal/powder and preparation method thereof |
-
1990
- 1990-05-09 JP JP2119235A patent/JP3038485B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110777434A (en) * | 2019-11-12 | 2020-02-11 | 中国工程物理研究院化工材料研究所 | Mixed anion infrared nonlinear optical crystal/powder and preparation method thereof |
| CN110777434B (en) * | 2019-11-12 | 2020-07-28 | 中国工程物理研究院化工材料研究所 | Mixed anion infrared nonlinear optical crystal/powder and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3038485B2 (en) | 2000-05-08 |
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