JPH0416106B2 - - Google Patents
Info
- Publication number
- JPH0416106B2 JPH0416106B2 JP60015949A JP1594985A JPH0416106B2 JP H0416106 B2 JPH0416106 B2 JP H0416106B2 JP 60015949 A JP60015949 A JP 60015949A JP 1594985 A JP1594985 A JP 1594985A JP H0416106 B2 JPH0416106 B2 JP H0416106B2
- Authority
- JP
- Japan
- Prior art keywords
- organic film
- resist
- water
- pattern
- contrast
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 36
- 229920005989 resin Polymers 0.000 claims description 19
- 239000011347 resin Substances 0.000 claims description 19
- 238000004061 bleaching Methods 0.000 claims description 15
- 238000005562 fading Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000002845 discoloration Methods 0.000 claims description 5
- 230000007261 regionalization Effects 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 description 14
- 230000009467 reduction Effects 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229920001218 Pullulan Polymers 0.000 description 3
- 239000004373 Pullulan Substances 0.000 description 3
- 229920005601 base polymer Polymers 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 150000008049 diazo compounds Chemical class 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 235000019423 pullulan Nutrition 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 150000004676 glycans Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- YPKJPFXVPWGYJL-UHFFFAOYSA-N naphthalene-1,4-dione;sulfuryl dichloride;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].ClS(Cl)(=O)=O.C1=CC=C2C(=O)C=CC(=O)C2=C1 YPKJPFXVPWGYJL-UHFFFAOYSA-N 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920001282 polysaccharide Polymers 0.000 description 2
- 239000005017 polysaccharide Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229920003169 water-soluble polymer Polymers 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 101100506034 Fibrobacter succinogenes (strain ATCC 19169 / S85) cel-3 gene Proteins 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 101150026317 cel3 gene Proteins 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
この発明は放射線たとえば紫外線に対して漂白
作用を付加させ完全に漂白した後の透過率が高く
なる〔横軸露光エネルギ（Ｘ）、縦軸透過率（Ｙ）
とした特性式、Ｙ＝AX＋Ｂとした場合Ａが大
で、Ｂが小なる傾向〕性質を有し、更に水溶性で
あるパターン形成有機膜を用いて、従来の露光方
法による解像度の向上を改善する微細パターン形
成に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention adds a bleaching action to radiation, such as ultraviolet rays, and increases the transmittance after complete bleaching [horizontal axis: exposure energy (X), vertical axis: transmittance] (Y)
Using the characteristic formula, Y = AX + B, A tends to be large and B tends to be small], and by using a pattern-forming organic film that is water-soluble, the improvement in resolution achieved by conventional exposure methods has been improved. This relates to the formation of fine patterns.
従来の技術
集積回路の高集積化、高密度化は従来のリソグ
ラフイ技術の進歩により増大してきた。その最小
線幅も1μｍ前後となつてきており、この加工線
幅を達成するためには、高開口レンズ（高NA）
を有した縮小投影法により紫外線露光する方法、
基板上に直線描画する電子ビーム露光法、Ｘ線を
用いたプロキシミテイ露光法があげられる。しか
し、スループツトを犠牲にすることなくパターン
形成するには前者の縮小投影法により紫外線露光
する方法が最良である。しかし紫外線露光の解像
度Ｒは、次式のレーレス則で示される。BACKGROUND OF THE INVENTION The increasing integration and density of integrated circuits has increased due to advances in conventional lithography techniques. The minimum line width has become around 1μm, and in order to achieve this processing line width, a high aperture lens (high NA) is required.
A method of exposing to ultraviolet light by a reduction projection method having
Examples include an electron beam exposure method that draws a straight line on a substrate, and a proximity exposure method that uses X-rays. However, in order to form a pattern without sacrificing throughput, the former method of ultraviolet exposure using a reduction projection method is best. However, the resolution R of ultraviolet exposure is expressed by the following Rayles law.
Ｒ＝0.6×λ／N.A×（１＋１／ｍ） ……(1)
λ；波長
N.A；レンズ開口度
ｍ；倍率
解像度を向上するには、短波長化、高N.A化が
考えられるが、現在可能な光学系の性能は例え
ば、波長λが356nｍ（ｉ−ライン）、N.Aが0.4と
すると解像度Ｒは0.6μｍとなり、電子ビーム露光
法、Ｘ線露光の解像度より劣るとされている。R=0.6×λ/NA×(1+1/m)...(1) λ; Wavelength NA; Lens aperture m; Magnification To improve resolution, shortening the wavelength and increasing NA can be considered, but currently this is not possible. For example, when the wavelength λ is 356 nm (i-line) and the NA is 0.4, the resolution R is 0.6 μm, which is said to be inferior to the resolution of electron beam exposure and X-ray exposure.
しかし、1983年、米国GE社のB.F.Griffingら
はパターン形成用のレジスト上に光強度プロフア
イルのコントラストを促進させるコントラスト・
エンハンスド層を積層することにより、解像度及
びパターン形状の改善を図る方法を発表した
（Contrast Enhancecl Photolithography、B.F.
Griffing et al、IEEE−ED、VOL.EDL−４、No.
１、Jan.1983）。彼らによると通常の縮小撮影法
（λ；436nｍ、N.A；0.32）で0.4μｍまでの解像
が可能と報告している。 However, in 1983, BFGriffing et al. of GE in the United States developed a contrast film that promotes the contrast of the light intensity profile on the resist for pattern formation.
We announced a method to improve resolution and pattern shape by stacking enhanced layers (Contrast Enhancecl Photolithography, BF
Griffing et al, IEEE-ED, VOL.EDL-4, No.
1, Jan. 1983). They report that it is possible to resolve down to 0.4 μm using the normal reduction imaging method (λ: 436 nm, NA: 0.32).
発明者らの研究の結果、コントラストをエンハ
ンスするためのパターン形成有機膜の特性は次の
ようでなければならないことが判明した。 As a result of research by the inventors, it has been found that the characteristics of a patterned organic film to enhance contrast must be as follows.
第３図にて、まず、光による露光たとえば一般
的に縮小投影法における問題点につい述べる。縮
小投影露光法における出力の光強度プロフアイル
は、その光学レンズ系により加工される。説明す
るとレチクル５を通し露光４した場合〔第３図
Ａ〕、回折のない理想的な入力光強度プロフアイ
ルは完全な矩形波といえ、そのコントラストＣは
次式で
Ｃ＝Inax−Inio／Inax＋Inio×100（％） ……(2)
示される。その時、コントラストＣは100％とあ
る〔第３図Ｂ〕。その入力波形は光学レンズを通
過することで、その光学レンズ系の伝達関数によ
つて〔第３図Ｃ〕、フーリエ変換された後、出力
波形として余弦波の形状に近くなりコントラスト
Ｃも劣化する。このコントラストの劣化はパター
ン形状、例えば解像度及びパターン形状に大きく
影響する。ちなみにレジストパターン解像に要す
るコントラストは、レジスト自身の特性により60
％以上とされ、コントラストＣ値が60％以下とな
りパターン形成が不能となる。 Referring to FIG. 3, we will first discuss the problems associated with light exposure, such as the reduction projection method in general. The output light intensity profile in the reduction projection exposure method is processed by the optical lens system. To explain, in the case of exposure 4 through reticle 5 [Figure 3A], the ideal input light intensity profile without diffraction can be said to be a perfect rectangular wave, and its contrast C is given by the following formula: C = I nax - I nio /I nax +I nio ×100 (%) ...(2) Shown. At that time, the contrast C is 100% [Figure 3B]. When the input waveform passes through an optical lens, it is Fourier transformed by the transfer function of the optical lens system [Figure 3C], and the output waveform becomes close to the shape of a cosine wave, and the contrast C also deteriorates. . This deterioration of contrast greatly affects pattern shape, such as resolution and pattern shape. By the way, the contrast required for resist pattern resolution is 60% due to the characteristics of the resist itself.
% or more, the contrast C value becomes less than 60%, and pattern formation becomes impossible.
そこで、第４図に示す特性曲線、つまり露光時
間（露光エネルギー）の小なる領域では紫外線に
対する透過率が小さく（Inioの増加が少ない）、露
光エネルギーの大なる領域では紫外線に対する透
過率が大きい（Inaxの増加が多い）傾向のレジス
ト膜を用い、この膜に前述の第３図Ｄに示す出力
波形を通過させることによりコントラストＣ値が
増大する傾向が発見される。これを更に定量的に
説明するため、米国IBM者のF.H.Dillらの報告
（Characterization of Positive Phctcresist、F.
H.Dill et al、IEEE−ED、VOL.ED−22、No.７、
July.1975）の中でポジレジストの露光吸収項Ａ
にあらわされるパラメータを使用する。一般的に
Ａは
Ａ＝１／ｄln〔Ｔ（∝）／Ｔ（ｏ）〕……(3
)
示され、コントラストエンハンスにはＡ値が大な
る傾向が望ましい。Ａを大なる傾向にするにはｄ
（膜厚）を薄く、Ｔ（ｏ）（初期透過率）Ｔ（∝）
（最終透過率）の比が大になることが必要である。 Therefore, in the characteristic curve shown in Figure 4, in the region where the exposure time (exposure energy) is small, the transmittance to ultraviolet rays is small (increase in I nio is small), and in the region where the exposure energy is large, the transmittance to ultraviolet rays is large. By using a resist film that tends to increase I nax and passing the output waveform shown in FIG. 3D above through this film, it is discovered that the contrast C value tends to increase. To further explain this quantitatively, a report by FHDill et al. from IBM (USA) (Characterization of Positive Phctcresist, F.
H. Dill et al, IEEE-ED, VOL.ED-22, No.7,
Exposure absorption term A of positive resist in July.1975)
Use the parameters shown in . Generally, A is A=1/dln[T(∝)/T(o)]...(3
), and it is desirable for contrast enhancement to have a large A value. To make A a great tendency, d
(film thickness), T(o) (initial transmittance) T(∝)
It is necessary that the ratio of (final transmittance) be large.
ところで、前記GE社の発表ではコントラスト
エンハンスド層の材料に関しては未だ公表はされ
ていない。第２図を用いて従来のGE社の
Griffingらのコントラストエンハンスドリソグラ
フイー（略、CEL）を用いたパターン形成プロ
セスについて説明する。基板１上にレジスト２を
回転塗布する〔第２図Ａ〕。次にレジスト２上に
コントラストエンハンスドレイヤー（CEL）３
を回転塗布する〔第２図Ｂ〕。そして、縮小投影
法により選択的に紫外線露光４する〔第２図ｃ〕。
このとき、レジスト２の一部も選択露光される。
そして、CEL３全体を除去する〔第２図Ｄ〕。そ
して最後に通常の現像処理を施こしレジスト２の
パター形成を行なう〔第２図Ｅ〕。なおGE社の出
願にかかる特開昭59−104642号に記載された
CEL工程においても、CEL膜をトリクロロエチ
レンで全面除去したのちその下のレジストの露光
部分を除去するという複雑な工程が示されてい
る。以上のような方法ではCELの具備すべき条
件は、コントラストエンハンスする特性ともに下
層であるパターン形成用のレジスト２との溶解を
防止することと、CEL３を除去する際の除去液
がレジスト２の特性を劣化させないことがあげら
れる。この具備すべき条件によつて材料構成に多
大なる別約をうける。さらに、CELの除去工程
というプロセス的観点よりみて、複雑かつ危険な
工程が存在する。 By the way, in the above-mentioned announcement by GE, the material of the contrast enhanced layer has not yet been disclosed. Using Figure 2, the conventional GE company
We will explain the pattern formation process using contrast-enhanced lithography (abbreviated as CEL) by Griffing et al. A resist 2 is spin-coated onto the substrate 1 (FIG. 2A). Next, contrast enhanced layer (CEL) 3 is applied on resist 2.
Rotate and apply [Fig. 2B]. Then, it is selectively exposed to ultraviolet light 4 using a reduction projection method (FIG. 2c).
At this time, a part of the resist 2 is also selectively exposed.
Then, the entire CEL3 is removed [Fig. 2D]. Finally, a normal development process is performed to form a pattern of resist 2 (FIG. 2E). In addition, it was described in Japanese Patent Application Laid-open No. 104642/1989 filed by GE.
The CEL process also involves a complicated process in which the entire CEL film is removed with trichlorethylene and then the exposed portion of the resist underneath is removed. In the above method, the conditions that CEL must have are that it has contrast-enhancing characteristics and that it prevents dissolution with the underlying pattern forming resist 2, and that the removal liquid used to remove CEL 3 has the characteristics of resist 2. One example is that it does not cause deterioration. This condition that must be met imposes significant restrictions on the material composition. Furthermore, from a process point of view, the CEL removal process is complicated and dangerous.
発明が解決しようとする問題点
本発明は、下層のパターン形成用レジスト（感
光性樹脂）とのマツチングを考慮し、コントラス
トエンハンスド層とレジストとの溶解及び除去の
際の除去液による影響を排除し、複雑な除去工程
を省略することを目的とする。Problems to be Solved by the Invention The present invention considers matching with the underlying pattern forming resist (photosensitive resin) and eliminates the influence of the removal liquid when dissolving and removing the contrast enhanced layer and the resist. , the purpose is to omit the complicated removal process.
問題点を解決するための手段
本発明は前記問題点を解決するために、基板に
感光性樹脂を塗布する工程、前記感光性樹脂上に
退色性あるいは漂白性を有した化合物を含む水溶
性有機膜を、前記樹脂と溶解することなく積層形
成する工程、前記感光性樹脂と前記退色性あるい
は漂白性を有した化合物を含む水溶性有機膜を選
択的に露光する工程、前記選択的に露光した感光
性樹脂およびこの上の水溶性有機膜の積層構造を
前記感光性樹脂の水溶液系現像液にて現像するこ
とにより、前記退色性あるいは漂白性を有した化
合物を含む水溶性有機膜全体を溶解させるととも
に前記感光性樹脂の露光部を除去することを特徴
とするパターン形成方法を提供するものである。Means for Solving the Problems In order to solve the above problems, the present invention includes a step of coating a photosensitive resin on a substrate, and a water-soluble organic compound containing a compound having discoloration or bleaching properties on the photosensitive resin. a step of laminating a film with the resin without dissolving it; a step of selectively exposing the water-soluble organic film containing the photosensitive resin and the compound having fading or bleaching properties; By developing the laminated structure of the photosensitive resin and the water-soluble organic film thereon with an aqueous developer of the photosensitive resin, the entire water-soluble organic film containing the compound having discoloration or bleaching properties is dissolved. The present invention provides a pattern forming method characterized in that the exposed portions of the photosensitive resin are removed at the same time.
作 用
本発明に用いるパターン形成用有機膜では下層
の感光性樹脂の現像液あるいはリンス液に易溶性
である水溶性の性質を有しなければならない。そ
こでたとえば通常用いられるノボラツク系キノン
ンジアジドポジレジストの紫外線の透過率はセン
シタイザーであるナフトキノンジアジドスルホニ
ルクロライドのノボラツク樹脂に対する重量パー
セントで制限されるといえる。本発明者らはパタ
ーン形成有機膜自身はパターンとして残存させな
くてもかまわないため、ナフトキノンジアジドス
ルホニルクロライドの重量パーセント増加するこ
とは可能であり、アルカリ水溶液に対しても溶解
速度も増すという結果となるとを見い出した。Function The organic film for pattern formation used in the present invention must have water-soluble properties that are easily soluble in the developer or rinse solution of the underlying photosensitive resin. For example, commonly used novolak quinones It can be said that the ultraviolet transmittance of a diazide positive resist is limited by the weight percentage of naphthoquinonediazide sulfonyl chloride, which is a sensitizer, to the novolak resin. The present inventors found that since the pattern-forming organic film itself does not need to remain as a pattern, it is possible to increase the weight percentage of naphthoquinonediazide sulfonyl chloride, and as a result, the dissolution rate also increases in an alkaline aqueous solution. I found out that.
更に別の方法として、ベースポリマーとして水
溶性ポリマーを使用しその溶液に紫外線に対して
退色性あるいは漂白作用を有した化合物例えば退
色性染料を含ませることによる有機膜により、コ
ントラストエンハンス及び水溶性の性質を付加さ
せることができる。 Yet another method is to use a water-soluble polymer as a base polymer, and to add contrast enhancement and water-soluble Properties can be added.
本発明に用いる水溶性でかつ漂白あるいは退色
作用を有したパターン形成有機膜の材料構成は、
本発明の実施例のかぎりではない。 The material composition of the pattern-forming organic film that is water-soluble and has a bleaching or fading effect used in the present invention is as follows:
This is not limited to the embodiments of the present invention.
実施例
（その１）
ベースポリマーとしての水溶性ポリマーには、
例えば多糖体、たんぱく質、ポリビニルピロリド
ン、ポニビニルアルコールなどがあげられるが、
本実施例では、多糖体であるプルラン（林原生物
化学研究所製）を脱イオン水100c.c.に10ｇ溶解さ
せたものを用いる。更に436nｍから36nｍの波長
域に対して漂白作用を有したジアゾ化合物を0.2
ｇ程度溶解した。この際の水溶液はゲル状あるい
は不溶物で沈殿物はなく非常にクリーンなもので
あつた。この水溶液を、通常のレジストを1.5μｍ
に塗布形成した上に0.5μｍ塗布積層した２層構造
とした。Example (Part 1) The water-soluble polymer as the base polymer includes:
Examples include polysaccharides, proteins, polyvinylpyrrolidone, ponyvinyl alcohol, etc.
In this example, 10 g of pullulan (manufactured by Hayashibara Biochemical Research Institute), a polysaccharide, dissolved in 100 c.c. of deionized water is used. Furthermore, 0.2% of a diazo compound that has a bleaching effect in the wavelength range from 436nm to 36nm is added.
About g was dissolved. The aqueous solution at this time was gel-like or insoluble, with no precipitates and was very clean. Apply this aqueous solution to a normal resist with a thickness of 1.5 μm.
A two-layer structure was obtained by coating and laminating the layer with a thickness of 0.5 μm.
なお、塗布膜とした有機膜のＡ値は５と高い値
を示した。この値はジアゾ化合物の添加により10
以上まで可能であつた。漂白あるいは退色作用を
発揮させる物質としてジアゾ化合物を用いると、
光の吸収効率が良く、水に対する溶解性が高く反
応速度も早い。また、プルランとの相溶性が特に
すぐれている。 Note that the A value of the organic film used as a coating film was as high as 5. This value increases by adding diazo compound to 10
The above was possible. When a diazo compound is used as a substance that exhibits a bleaching or fading effect,
It has good light absorption efficiency, high solubility in water, and fast reaction rate. In addition, it has particularly good compatibility with pullulan.
さらに、ベースポリマーとしてプルランを用い
ると、冷水に溶けやすく、安定で塗布も容易であ
り、半導体フオトリソ工程に極めて有効である。 Furthermore, when pullulan is used as a base polymer, it is easily soluble in cold water, stable, and easy to apply, making it extremely effective in semiconductor photolithography processes.
次に前述の作製したパターン形成有機膜を使用
したパターン形成方法を第１図を用いて説明す
る。 Next, a pattern forming method using the pattern-forming organic film prepared above will be explained with reference to FIG.
半導体等の基板１上にレジスト２を1.0〜2.0μ
ｍ厚に塗布形成する〔第１図Ａ〕。次にレジス２
上に前に説明した水溶性で放射線に対し漂白作用
あるいは退色作用を付加したパターン形成有機膜
５を積層する〔第１図Ｂ〕。この際下層であるレ
ジスト２と上層のパターン形成有機膜５との溶解
はまつたく観察されなかつた。次に紫外線による
縮小投影露光法４により選択的に露光を施こす
〔第１図Ｃ〕。この時、第３図に説明したように入
射光はフーリエ変換されコントラスト値Ｃは劣化
し、例えば436nｍのN.A（ニユーメリカルアパー
チヤ）0.32であると、0.6μｍラインアンドスペー
スのマスクを通過したあとコントラストＣ値は50
％であり、通常解像はしない。しかしパターン形
成有機膜５のＡパラメータを５とした場合、パタ
ーン形成有機膜５を通過したコントラスト50％の
入射光はコントラスト70％にエンハンスされ、下
層のレジスト層２に入る結果となつた。その後、
レジスト２の現像液例えばアルカリ現像液により
現像する際にパターン形成有機膜５全体に瞬間時
に溶解した。そして前記現像を引きつづき行う
と、通常のコントラストをエンハンスした入射光
により感光したレジスト２の一部を現像除去する
〔第１図Ｄ〕。この結果0.5μｍのラインアンドスペ
ースを鮮明に解像することが出来た。 Resist 2 with a thickness of 1.0 to 2.0μ on substrate 1 of semiconductor etc.
Coat it to a thickness of m (Fig. 1A). Next, Regis 2
The pattern-forming organic film 5 which is water-soluble and has a bleaching or fading action against radiation as described above is laminated (FIG. 1B). At this time, no dissolution of the resist 2 as the lower layer and the pattern-forming organic film 5 as the upper layer was observed. Next, selective exposure is performed using ultraviolet rays using a reduction projection exposure method 4 (FIG. 1C). At this time, as explained in Figure 3, the incident light undergoes Fourier transformation and the contrast value C deteriorates.For example, if the NA (numerical aperture) of 436 nm is 0.32, it will pass through a 0.6 μm line-and-space mask. Also, the contrast C value is 50.
% and usually does not resolve. However, when the A parameter of the pattern-forming organic film 5 was set to 5, the incident light having a contrast of 50% that passed through the pattern-forming organic film 5 was enhanced to a contrast of 70% and entered the resist layer 2 below. after that,
When developing the resist 2 with a developer such as an alkaline developer, it was instantly dissolved in the entire pattern-forming organic film 5. When the development is continued, a portion of the resist 2 exposed to the normal contrast-enhanced incident light is developed and removed (FIG. 1D). As a result, we were able to clearly resolve lines and spaces of 0.5 μm.
なお、露光波長に関して、有機膜の漂白作用あ
るいは退色作用のマツチングを行なうことにより
任意に設定することは本発明のかぎりでない。 Note that the present invention does not limit the exposure wavelength to be arbitrarily set by matching the bleaching action or fading action of the organic film.
以上のように、本発明の方法によれば感光性樹
脂であるレジスト２上に直接退色性あいは漂白性
を有する有機膜５を積層するに際し、この有機膜
５が水溶液に溶解する水溶性であるため、通常使
用される有機溶媒系の感光性樹脂であるレジスト
２とは互いに溶解しない。すなわち、レジスト２
と水溶性含機膜５との溶解は生じないため、レジ
スト２上への水溶性有機膜５の塗布の実現が可能
となり、単にレジスト２上に有機膜５を塗布する
ので漂白又は退色性を有する有機膜とレジストの
積層体の確実な形成が可能となる。 As described above, according to the method of the present invention, when the organic film 5 having discoloration or bleaching properties is directly laminated on the resist 2 which is a photosensitive resin, the organic film 5 is a water-soluble film that dissolves in an aqueous solution. Therefore, it does not dissolve in the resist 2, which is a commonly used organic solvent-based photosensitive resin. That is, resist 2
Since no dissolution occurs between the water-soluble organic film 5 and the water-soluble organic film 5, it is possible to apply the water-soluble organic film 5 on the resist 2. Since the organic film 5 is simply applied on the resist 2, there is no possibility of bleaching or fading. It becomes possible to reliably form a laminate of the organic film and the resist.
さらに、有機膜５は水溶性であるため、レジス
トの露光部の現像除去に使用されるアルカリ水溶
液等の水溶液系の現像液にて有機膜５は溶解す
る。したがつて、通常のレジスト２の現像工程に
て役割の終わつた有機膜５を溶解することがで
き、現像工程は何ら複雑化しない。 Further, since the organic film 5 is water-soluble, the organic film 5 is dissolved in an aqueous developer such as an alkaline aqueous solution used to develop and remove the exposed portion of the resist. Therefore, the organic film 5 whose role has been completed can be dissolved in the normal developing process of the resist 2, and the developing process is not complicated at all.
このように、本発明の方法では、単に水溶性有
機膜５の塗布工程を追加するのみで、コントラス
トエンハンス効果を使用して微細レジストパター
ンを形成することが可能となり、半導体装置等の
製造において大切なプロセスの容易性、スループ
ツトの向上を確保することができ、通常の露光、
現像を用いて安定かつ微細なパターンを形成する
ことができる。 As described above, in the method of the present invention, by simply adding the step of coating the water-soluble organic film 5, it is possible to form a fine resist pattern using the contrast enhancement effect, which is important in the manufacture of semiconductor devices, etc. Normal exposure, which can ensure process ease and throughput improvement
A stable and fine pattern can be formed using development.
なお、本発明の実施に際し、レジスト２は、露
光部が水あるいはアルカリなどの水溶液系の現像
液にて現像除去される性質のものを使用すればよ
く、例えば通常使用するジアゾ系のボジ形レジス
トが代表的なものである。 In carrying out the present invention, the resist 2 may be one in which the exposed portion is developed and removed by an aqueous developer such as water or an alkali, such as a commonly used diazo positive resist. is a typical example.
発明の効果
以上のように、本発明は、従来の縮小投影法の
光学系で制限されていた解像度の劣化によるパタ
ーン形状の劣化を、コントラストエンハンスする
ことで改善し、工程が少なくてすみかつレジスト
との溶解が生じない水溶性の性質を有する有機膜
を用いることで、容易に微細なレジストパターン
を形成できるとともに、紫外線露光の微細化への
道つまり寿命を延ばすことができる。そしてま
た、高価なEB露光機、Ｘ線露光機の導入の必要
性をへらすことができ、半導体装置の微細化等に
すぐれた工業的価値を発揮することができる。Effects of the Invention As described above, the present invention improves the deterioration of the pattern shape due to the deterioration of resolution, which was limited by the optical system of the conventional reduction projection method, by enhancing the contrast. By using an organic film that is water-soluble and does not dissolve in water, it is possible to easily form a fine resist pattern, and it is also possible to make ultraviolet ray exposure finer, thereby extending the life of the resist. Furthermore, it is possible to reduce the need for introducing expensive EB exposure machines and X-ray exposure machines, and it is possible to exhibit excellent industrial value in miniaturization of semiconductor devices.
第１図Ａ〜Ｄは本発明の一実施例のパターン形
成工程断面図、第２図Ａ〜Ｅは従来のコントラス
トエンハンスプロセスフロー断面図、第３図Ａ〜
Ｄは縮小投影法の光学プロフアイルの変換説明
図、第４図は本発明のパターン形成有機膜の透過
特性図である。
１……基板、２……レジスト（感光性樹脂）、
５，７……パターン形成有機膜。
1A to 1D are sectional views of a pattern forming process according to an embodiment of the present invention, 2A to 2E are sectional views of a conventional contrast enhancement process flow, and 3A to 3D are sectional views of a conventional contrast enhancement process flow.
D is an explanatory diagram of conversion of the optical profile by the reduction projection method, and FIG. 4 is a transmission characteristic diagram of the patterned organic film of the present invention. 1...Substrate, 2...Resist (photosensitive resin),
5, 7... Pattern-forming organic film.
Claims (1)
性樹脂上に退色性あるいは漂白性を有した化合物
を含む水溶性有機膜を、前記樹脂と溶解すること
なく積層形成する工程、前記感光性樹脂と前記退
色性あるいは漂白性を有した化合物を含む水溶性
有機膜に選択的に露光する工程、前記選択的に露
光した感光性樹脂およびこの上の水溶性有機膜の
積層構造を前記感光性樹脂の水溶液系現像液にて
現像することにより、前記退色性あるいは漂白性
を有した化合物を含む水溶性有機膜全体を溶解さ
せるとともに前記感光性樹脂の露光部を除去する
ことを特徴とするパターン形成方法。1. A step of applying a photosensitive resin to a substrate, a step of laminating a water-soluble organic film containing a compound with fading or bleaching properties on the photosensitive resin without dissolving it with the resin, and the photosensitive resin. and a step of selectively exposing the water-soluble organic film containing the compound having discoloration or bleaching properties to light, and forming a layered structure of the selectively exposed photosensitive resin and the water-soluble organic film thereon to Pattern formation characterized in that the entire water-soluble organic film containing the compound having discoloration or bleaching properties is dissolved and the exposed portion of the photosensitive resin is removed by developing with an aqueous developer. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60015949A JPS61179535A (en) | 1985-01-30 | 1985-01-30 | Layered structure resist and pattern forming method applying it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60015949A JPS61179535A (en) | 1985-01-30 | 1985-01-30 | Layered structure resist and pattern forming method applying it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61179535A JPS61179535A (en) | 1986-08-12 |
| JPH0416106B2 true JPH0416106B2 (en) | 1992-03-23 |
Family
ID=11903007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60015949A Granted JPS61179535A (en) | 1985-01-30 | 1985-01-30 | Layered structure resist and pattern forming method applying it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61179535A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62133444A (en) * | 1985-12-04 | 1987-06-16 | Matsushita Electric Ind Co Ltd | Pattern-forming organic material |
| JPH06255016A (en) * | 1993-03-01 | 1994-09-13 | Afuiniteii Kk | Autonomously answering laminate, its production and window used therewith |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60238829A (en) * | 1984-05-14 | 1985-11-27 | Toshiba Corp | Formation of pattern |
| JPS6184644A (en) * | 1984-09-04 | 1986-04-30 | マイクロサイ，インコーポレイテッド | Photoengraving and combination containing barrier layer |
-
1985
- 1985-01-30 JP JP60015949A patent/JPS61179535A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60238829A (en) * | 1984-05-14 | 1985-11-27 | Toshiba Corp | Formation of pattern |
| JPS6184644A (en) * | 1984-09-04 | 1986-04-30 | マイクロサイ，インコーポレイテッド | Photoengraving and combination containing barrier layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61179535A (en) | 1986-08-12 |
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