JPH04157761A - Cutting method for tie bar - Google Patents

Cutting method for tie bar

Info

Publication number
JPH04157761A
JPH04157761A JP28283090A JP28283090A JPH04157761A JP H04157761 A JPH04157761 A JP H04157761A JP 28283090 A JP28283090 A JP 28283090A JP 28283090 A JP28283090 A JP 28283090A JP H04157761 A JPH04157761 A JP H04157761A
Authority
JP
Japan
Prior art keywords
resin
tie bar
dam
punch
bar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28283090A
Other languages
Japanese (ja)
Inventor
Toru Numata
徹 沼田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP28283090A priority Critical patent/JPH04157761A/en
Publication of JPH04157761A publication Critical patent/JPH04157761A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To cut a tie bar without generating a resin residue by irradiating a resin dam with a laser light ray from a generation source of a YAG or CO2, melting to remove the resin of the dam by heat, and then cutting to remove the bar by using a punch and a die. CONSTITUTION:A resin dam 3 is irradiated with a laser light ray 1 in a large area at each about 0.1mm of width at a periphery of the dam 3. About 50mum of thickness of the resin therein is removed though a lead frame 2 therearound is not changed at all in the dam 3 irradiated with the ray 1. This is repeated three to four times at each one position to remove all the resin. Then, a tie bar 5 is removed by a punch 4. The punch 4 is pectinated, and can simultaneously cut the bar 5 at a plurality of positions. A lead shape after the resin of the dam 3 and the bar 5 are removed has no resin residue in the dam 3 to complete cutting of the bar.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は樹脂封止型半導体素子(以下モールドICと記
す)の製造工程におけるタイバー切断方法に関し、特に
樹脂封止後にリード加工を行う工程の内、タイバーと樹
脂ダム部の樹脂の除去を行うタイバー切断方法に関する
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for cutting tie bars in the manufacturing process of resin-molded semiconductor devices (hereinafter referred to as molded ICs), and particularly relates to a method for cutting tie bars in the manufacturing process of resin-sealed semiconductor devices (hereinafter referred to as molded ICs), and particularly relates to a method for cutting tie bars in the manufacturing process of resin-sealed semiconductor devices (hereinafter referred to as molded ICs). The present invention relates to a tie bar cutting method for removing resin from a tie bar and a resin dam part.

〔従来の技術〕[Conventional technology]

従来、この種のタイバー切断方法は、第3図(a)、(
b)、(c)の説明区に示すように、プレス金型内にセ
ットされているパンチとそれに精密に嵌合するダイとを
用いて、第3図(a>に示すように、モールド樹脂9か
ら出ているリードフレーム2のリードとリードの間に生
じる樹脂ダム部3とタイバー部5とを同時に打ち抜く方
法であり、この方法は第3図(b)に示すように、複数
のパンチ7を樹脂ダム部とタイバー部の位置に合わせて
くし歯状に配置し、同時に複数箇所の樹脂ダム部とタイ
バー部とを打ち抜く方式が一般的であった。
Conventionally, this type of tie bar cutting method is as shown in Fig. 3(a), (
As shown in the explanation sections b) and (c), using a punch set in the press mold and a die that precisely fits into the punch, mold resin is molded as shown in Fig. 3 (a>). This is a method of simultaneously punching out the resin dam part 3 and tie bar part 5 that are produced between the leads of the lead frame 2 coming out from the lead frame 9, and this method uses a plurality of punches 7 as shown in FIG. 3(b). A common method was to arrange the resin dam part and the tie bar part in a comb-like shape to match the positions of the resin dam part and the tie bar part, and punch out the resin dam part and the tie bar part at a plurality of locations at the same time.

尚、パンチをくし歯状に配置する方法は、−本ずつのパ
ンチを一列に並べる方法と、一つの材料から複数本分同
時に加工しそれを並べる方法とがある。打ち抜きが終了
したタイバー部は、第3図(C)に示す様にクリアラン
スの関係で樹脂ダム部の周囲に樹脂残り部8が発生する
There are two methods for arranging punches in a comb-teeth pattern: a method in which punches are arranged one by one in a row, and a method in which a plurality of punches are processed simultaneously from one material and then arranged. In the tie bar part after punching, a resin residual part 8 is generated around the resin dam part due to the clearance, as shown in FIG. 3(C).

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のタイバー切断方法は、パンチとダイを用
いた機械式の打ち抜き方法であり、パンチ及びダイの製
作加工公差、モールドICの樹脂封止の位置ずれ、リー
ドフレームの公差等を加味して打ち抜きを考えると、樹
脂ダム部の打ち抜きには左右のリード側及びモールド樹
脂側にそれぞれ厚さ0.1mm程度の樹脂残り部を発生
させる。
The conventional tie bar cutting method described above is a mechanical punching method using a punch and die, and takes into account manufacturing tolerances of the punch and die, misalignment of the resin sealing of the molded IC, tolerances of the lead frame, etc. Considering punching, when punching out the resin dam portion, residual resin parts with a thickness of about 0.1 mm are generated on the left and right lead sides and the mold resin side, respectively.

この樹脂残り部は、リードとリードの間にはさまってい
るだけであり、次工程以降落下する可能性があり、リー
ドを所望の形状に曲げるリード加工用の金型内に落下し
た場合はリードにくいこみ、傷を生じさせなり、金型内
のパンチあるいはダイを破損させたりする原因になると
いう欠点がある。又、樹脂残り部が有ると、リードの樹
脂ダム部側面に次工程で付けるめっきが付かず、リード
の保護ができないといった欠点もある。
This residual resin is only caught between the leads and may fall off in the next process. It has the disadvantage that it can cause bites and scratches, which can cause damage to the punch or die in the mold. Furthermore, if there is a residual resin, the plating that will be applied in the next step will not adhere to the side surface of the resin dam portion of the lead, and the lead will not be protected.

上述した従来のタイバー切断方法に対し、本発明のタイ
バー切断方法は、樹脂ダム部の樹脂除去にYAGレーザ
やCO2レーザ等のレーザ光線を用い、レーザ光線を樹
脂ダム部より大きな面積に照射し、樹脂残り部を発生さ
せないように樹脂ダム部の全ての樹脂を溶融除去し、そ
の後、パンチとダイを用いてタイバー部を切断するとい
う相違点を有する。
In contrast to the conventional tie bar cutting method described above, the tie bar cutting method of the present invention uses a laser beam such as a YAG laser or a CO2 laser to remove the resin from the resin dam part, and irradiates the laser beam to an area larger than the resin dam part. The difference is that all the resin in the resin dam part is melted and removed so as not to generate residual resin, and then the tie bar part is cut using a punch and die.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のタイバー切断方法は、樹脂ダム部にYAG又は
C02を発生源とするレーザ光線を照射し、その熱でダ
ム部の樹脂を溶融除去し、その後、パンチとダイを用い
てタイバー部を切断除去する方法である。
The tie bar cutting method of the present invention involves irradiating a resin dam with a laser beam whose source is YAG or C02, melting and removing the resin in the dam with the heat, and then cutting the tie bar using a punch and die. This is a method of removing it.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図(a)、(b)、(c)は本発明の実施例1の説
明図である。レーザ光線1はYAG又はC02を発生源
とするものであり、照射面積は樹脂ダム部3より周囲に
幅0.1mm程度大きい。
FIGS. 1(a), (b), and (c) are explanatory diagrams of Embodiment 1 of the present invention. The laser beam 1 is generated from YAG or C02, and the irradiation area is larger than the resin dam part 3 by about 0.1 mm in width around the periphery.

照射エネルギーはリードフレーム2を切断できる程強く
はなく、数W/cm2程度であり、1回の照射で樹脂を
厚さ50μm程度除去できるものである。
The irradiation energy is not strong enough to cut the lead frame 2, but is about several W/cm 2 , and a thickness of about 50 μm of resin can be removed with one irradiation.

照射方法は、所望の照射面積に合わせるようにレンズ等
を用いてレーザ光線を絞り、所望の樹脂ダム部にミラー
等で誘導し照射して行くものである。照射回数は、1回
の照射で除去できる樹脂は厚さ50μm程度であるので
3回から4回程度照射する。リードフレーム2は42合
金や銅でできでおり、その厚みは0−15mmから0.
2mm程度である。樹脂ダム部3に流れ込んだ樹脂はモ
ールドICを封止している樹脂と同じ材料であり、厚み
はリードフレーム2と同じである。パンチ4は超硬合金
でできており、長さはタイバー部5のみを切断する長さ
であり、幅は切断時にリードへのくい込みを発生させな
いようにタイバーの幅より両側を0.1mm程度ずつ狭
くしである。
The irradiation method involves focusing the laser beam using a lens or the like to match the desired irradiation area, and guiding the laser beam to the desired resin dam portion using a mirror or the like and irradiating the laser beam. The number of irradiations is about 3 to 4 times, since the thickness of the resin that can be removed by one irradiation is about 50 μm. The lead frame 2 is made of 42 alloy or copper, and its thickness ranges from 0-15mm to 0.5mm.
It is about 2 mm. The resin that has flowed into the resin dam portion 3 is the same material as the resin sealing the molded IC, and has the same thickness as the lead frame 2. The punch 4 is made of cemented carbide, and the length is long enough to cut only the tie bar portion 5, and the width is about 0.1 mm on both sides from the width of the tie bar to prevent it from digging into the lead during cutting. It's narrow.

レーザ光線1を、第1図(a>のように樹脂ダム部3よ
り周囲に幅0.1mm程度ずつ大きな面積で樹脂ダム部
3に1箇所ずつ照射する。レーザ光線1を照射された樹
脂ダム部3では、周囲のリードフレーム2は何も変化し
ないが中の樹脂のみが厚さ50μm程度除去される。こ
れを1m所につき3回から4回程度繰返すことにより、
樹脂のみを全て除去する。次に、第1図<b>に示すよ
うにタイバー部5をパンチ4で除去する。尚、パンチ4
はくし歯状になっており、タイバー部5を複数箇所同時
に切断加工できる。樹脂ダム部3の樹脂とタイバー部5
を除去した後のリード形状は、第1図(c)に示すよう
に樹脂ダム部3には樹脂残り部がない状態でタイバー切
断を終了する。
The laser beam 1 is irradiated on the resin dam part 3 one by one in an area larger than the resin dam part 3 by about 0.1 mm in width as shown in FIG. 1 (a).The resin dam irradiated with the laser beam 1 In section 3, the surrounding lead frame 2 does not change at all, but only the resin inside is removed to a thickness of about 50 μm.By repeating this about 3 to 4 times per 1 meter section,
Remove only the resin. Next, as shown in FIG. 1<b>, the tie bar portion 5 is removed with a punch 4. In addition, punch 4
It has a comb tooth shape, and the tie bar portion 5 can be cut at multiple locations at the same time. Resin of resin dam part 3 and tie bar part 5
After the lead shape is removed, as shown in FIG. 1(c), the tie bar cutting is completed with no resin remaining in the resin dam portion 3.

第2図は本発明の実施例2の説明図である。レーザ光線
6は実施例1と同様にYAG又はco2を発生源とする
が、その照射面積は、第2図に示す様に複数の樹脂ダム
部3を同時に照射できる様に幅広く、かつ奥行き方向は
実施例1と同様にモールド樹脂9の本体側へ0.1mm
、タイバー部5側へ0.1mm程度入った斯道とする。
FIG. 2 is an explanatory diagram of Embodiment 2 of the present invention. The laser beam 6 uses YAG or CO2 as the source as in Example 1, but its irradiation area is wide so that multiple resin dam parts 3 can be irradiated simultaneously, as shown in FIG. 2, and the depth direction is wide. 0.1 mm toward the main body side of the mold resin 9 as in Example 1
, the path is about 0.1 mm into the tie bar portion 5 side.

照射エネルギー、照射回数は実施例1と同様である。Irradiation energy and number of irradiations are the same as in Example 1.

複数箇所の樹脂ダム部3へ同時にレーザ光線6を照射す
ると、リードフレーム2に当っなレーザ光線6は反射さ
れるが、樹脂ダム部3に当ったレーザ光線6は樹脂を1
回で厚さ50μm程度除去する。これを3回から4回繰
返し、厚さ150μmから200μmの樹脂を除去する
。その後のタイバー部5の切断は実施例1と同様である
。この実施例2では、複数箇所の樹脂ダム部に同時にレ
ーザ光線を照射するので、レーザ光線の照射時間を短縮
できるといった利点がある。
When laser beams 6 are irradiated to multiple resin dam portions 3 at the same time, the laser beams 6 that hit the lead frame 2 are reflected, but the laser beams 6 that hit the resin dam portions 3 hit the resin at one time.
A thickness of approximately 50 μm is removed in each step. This is repeated 3 to 4 times to remove the resin with a thickness of 150 μm to 200 μm. The subsequent cutting of the tie bar portion 5 is the same as in the first embodiment. In this second embodiment, since the resin dam portions at a plurality of locations are irradiated with the laser beam at the same time, there is an advantage that the irradiation time of the laser beam can be shortened.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、樹脂ダム部の樹脂除去に
レーザ光線を用いることにより、樹脂残りを発生させず
タイバー切断を行うことができる効果がある。
As described above, the present invention has the advantage that by using a laser beam to remove resin from the resin dam portion, tie bar cutting can be performed without generating resin residue.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例1の説明図で、図(a)はレー
ザ光線の照射位置を示す図、図(b)はタイバー切断の
位置を示す図、図(C)はタイバー切断後のリードの形
状を示す図、第2図は本発明の実施例2の説明図、第3
図は従来のタイバー切断方法の説明図で、図(a)は樹
脂ダム部を示す図、図(b)はタイバー切断の位置を示
す図、図(c)はタイバー切断後のリードの形状を示す
図である。 1・・・レーザ光線、2・・・リードフレーム、3・・
・樹脂ダム部、4・・・パンチ、5・・・タイバー部、
6・・・レーザ光線、7・・・パンチ、8・・・樹脂残
り部、9・・・モールド樹脂。
Figure 1 is an explanatory diagram of Embodiment 1 of the present invention, where Figure (a) shows the irradiation position of the laser beam, Figure (b) shows the tie bar cutting position, and Figure (C) shows the tie bar after cutting. Figure 2 is an explanatory diagram of the second embodiment of the present invention, Figure 3 is a diagram showing the shape of the lead.
The figure is an explanatory diagram of the conventional tie bar cutting method. Figure (a) shows the resin dam part, Figure (b) shows the tie bar cutting position, and Figure (c) shows the shape of the lead after the tie bar is cut. FIG. 1... Laser beam, 2... Lead frame, 3...
・Resin dam part, 4... punch, 5... tie bar part,
6... Laser beam, 7... Punch, 8... Resin remainder, 9... Mold resin.

Claims (1)

【特許請求の範囲】[Claims]  樹脂封止した後樹脂ダム部とタイバー部とを同時に切
断除去するタイバー切断方法において、樹脂ダム部にレ
ーザ光線を照射し、その熱でダム部の樹脂を溶融して除
去し、その後パンチを用いてタイバー部を切断除去する
ことを特徴とするタイバー切断方法。
In the tie bar cutting method, in which the resin dam part and the tie bar part are cut and removed at the same time after resin sealing, the resin dam part is irradiated with a laser beam, the heat melts the resin in the dam part and removed, and then a punch is used to remove the resin. A tie bar cutting method characterized by cutting and removing a tie bar portion using a method.
JP28283090A 1990-10-19 1990-10-19 Cutting method for tie bar Pending JPH04157761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28283090A JPH04157761A (en) 1990-10-19 1990-10-19 Cutting method for tie bar

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28283090A JPH04157761A (en) 1990-10-19 1990-10-19 Cutting method for tie bar

Publications (1)

Publication Number Publication Date
JPH04157761A true JPH04157761A (en) 1992-05-29

Family

ID=17657635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28283090A Pending JPH04157761A (en) 1990-10-19 1990-10-19 Cutting method for tie bar

Country Status (1)

Country Link
JP (1) JPH04157761A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10063041A1 (en) * 2000-12-18 2002-07-04 Infineon Technologies Ag Method of making an integrated circuit
JP2010080913A (en) * 2008-08-28 2010-04-08 Sanyo Electric Co Ltd Resin sealing type semiconductor device and method for manufacturing the same, and resin sealing type electronic device
CN102044451A (en) * 2009-10-22 2011-05-04 瑞萨电子株式会社 Method of manufacturing semiconductor device and method of manufacturing electronic device
US8377751B2 (en) 2010-02-12 2013-02-19 Renesas Electronics Corporation Method for manufacturing semiconductor device
US9087850B2 (en) 2009-07-06 2015-07-21 Renesas Electronics Corporation Method for manufacturing semiconductor device
WO2016076179A1 (en) * 2014-11-11 2016-05-19 株式会社ミツバ Insert-molded article and method for producing insert-molded article

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10063041A1 (en) * 2000-12-18 2002-07-04 Infineon Technologies Ag Method of making an integrated circuit
US6649450B2 (en) 2000-12-18 2003-11-18 Infineon Technologies Ag Method of producing an integrated circuit and an integrated circuit
DE10063041B4 (en) * 2000-12-18 2012-12-06 Infineon Technologies Ag A method of manufacturing an integrated leadless package circuit and integrated leadless package circuit
JP2010080913A (en) * 2008-08-28 2010-04-08 Sanyo Electric Co Ltd Resin sealing type semiconductor device and method for manufacturing the same, and resin sealing type electronic device
US8502360B2 (en) 2008-08-28 2013-08-06 Sanyo Semiconductor Co., Ltd. Resin sealing type semiconductor device and method of manufacturing the same, and resin sealing type electronic device
US9087850B2 (en) 2009-07-06 2015-07-21 Renesas Electronics Corporation Method for manufacturing semiconductor device
US9263274B2 (en) 2009-07-06 2016-02-16 Renesas Electronics Corporation Method for manufacturing semiconductor device
CN102044451A (en) * 2009-10-22 2011-05-04 瑞萨电子株式会社 Method of manufacturing semiconductor device and method of manufacturing electronic device
US8435867B2 (en) 2009-10-22 2013-05-07 Renesas Electronics Corporation Method of manufacturing semiconductor device and method of manufacturing electronic device
US8377751B2 (en) 2010-02-12 2013-02-19 Renesas Electronics Corporation Method for manufacturing semiconductor device
WO2016076179A1 (en) * 2014-11-11 2016-05-19 株式会社ミツバ Insert-molded article and method for producing insert-molded article

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