JPH04154308A - Microwave band signal generator - Google Patents
Microwave band signal generatorInfo
- Publication number
- JPH04154308A JPH04154308A JP28038190A JP28038190A JPH04154308A JP H04154308 A JPH04154308 A JP H04154308A JP 28038190 A JP28038190 A JP 28038190A JP 28038190 A JP28038190 A JP 28038190A JP H04154308 A JPH04154308 A JP H04154308A
- Authority
- JP
- Japan
- Prior art keywords
- varactor diode
- frequency
- varied
- resonance circuit
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010355 oscillation Effects 0.000 claims abstract description 19
- 238000010586 diagram Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はマイクロ波帯信号発生器に関し、特に小型で外
部より周波数可変できる発振器に係るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a microwave band signal generator, and particularly to a small oscillator whose frequency can be varied from the outside.
従来マイクロ波帯固体発振器としてはガンダイオード、
インバットダイオード、ＦＥＴ等を使用した発振器がよ
く知られている。これらの発振器において、外部より発
振周波数を可変する手段には機械的同調機構を設けたも
の、共振回路にバラクタダイオードを結合させその印加
電圧を変える電圧制御型等がある。Conventional microwave band solid-state oscillators include Gunn diodes,
Oscillators using invat diodes, FETs, etc. are well known. In these oscillators, means for externally varying the oscillation frequency include those provided with a mechanical tuning mechanism, and those of a voltage control type in which a varactor diode is coupled to a resonant circuit and the applied voltage is varied.
第４図に従来の電圧制御型発振器の回路図を示す０発振
素子１．共振回路２．バラクタダイオード３及び直流電
源４より構成されている。電源４の電圧を変えることに
よりバラクタの容量が変り発振周波数を可変できる。こ
のような構成では発振器の外部に直流電源を必ず必要と
し、装置が大型になりかつ高価という欠点がある。一方
周波数同調棒の挿入長により共振周波数を変える方法は
、周波数の再現性という点に問題があり、又温度特性も
悪いという欠点があった。FIG. 4 shows a circuit diagram of a conventional voltage controlled oscillator with 0 oscillation elements 1. Resonant circuit 2. It is composed of a varactor diode 3 and a DC power supply 4. By changing the voltage of the power source 4, the capacitance of the varactor changes and the oscillation frequency can be varied. Such a configuration necessarily requires a DC power supply external to the oscillator, which has the disadvantage that the device becomes large and expensive. On the other hand, the method of changing the resonant frequency by changing the insertion length of the frequency tuning rod has problems in terms of frequency reproducibility and also has the drawbacks of poor temperature characteristics.
本発明のマイクロ波帯信号発生器は、発振器：と、前記
発振素子に結合する共振回路と、前記Ｊ振回路の等値線
路長を可変させるバラクタダイ】−ドとを有し、前記共
振回路の線路インピーダンスを低くし、かつ前記バラク
タダイオードと直夕又は並列に抵抗器が接続されている
というものズある。The microwave band signal generator of the present invention includes an oscillator, a resonant circuit coupled to the oscillation element, and a varactor diode for varying the equal line length of the J-oscillation circuit, There is a method in which the line impedance is lowered and a resistor is connected directly or in parallel with the varactor diode.
以下本発明について図面を参照して説明する。 The present invention will be explained below with reference to the drawings.
第１図は本発明の第１の実施例を示す発振器グ回路図で
ある。FIG. 1 is an oscillator circuit diagram showing a first embodiment of the present invention.
発振素子１（ＧａＡｓ ＭＥＳ ＦＥＴ）のフート
に共振回路２（線路長約１／２波長のマイクロストリッ
プ線路などの平面形導波路）が接続され、その他端には
バラクタダイオード３が接続されているが、そのバラク
タダイオードと並列に抵抗器５が接続されている０発振
素子１は、各電極間の寄生容量、寄生インダクタンスな
どにより負性抵抗を示すが、そのマイクロ波電力がバラ
クタダイオード３を励振し端子６に整流電圧が生ずる。A resonant circuit 2 (a planar waveguide such as a microstrip line with a line length of approximately 1/2 wavelength) is connected to the foot of the oscillation element 1 (GaAs MES FET), and a varactor diode 3 is connected to the other end. , the zero oscillation element 1 to which the resistor 5 is connected in parallel with the varactor diode exhibits negative resistance due to the parasitic capacitance, parasitic inductance, etc. between each electrode, but the microwave power excites the varactor diode 3. A rectified voltage is produced at terminal 6.
端子６に接続されている抵抗器５の抵抗値を変えること
により端子６の電圧が変わりバラクタダイオードの容量
値が変化し共振回路の等値線路長を変えることにより発
振周波数が変わるものである０例えば図において抵抗５
を大きくすると端子６の電圧は下がり発振周波数は高い
方ヘシフトする。又可変抵抗による周波数可変幅を広く
とるためには共振回路の線路インピーダンスを５０Ωよ
り小さくすることが有効である。By changing the resistance value of the resistor 5 connected to the terminal 6, the voltage at the terminal 6 changes, the capacitance value of the varactor diode changes, and the oscillation frequency changes by changing the equal line length of the resonant circuit. For example, in the figure, resistance 5
When the voltage is increased, the voltage at the terminal 6 decreases and the oscillation frequency shifts to a higher side. Further, in order to widen the frequency variable range by the variable resistor, it is effective to make the line impedance of the resonant circuit smaller than 50Ω.
本発明の具体例について数値を上げて説明する。第１図
において発振素子にＦＥＴを用いた場合で、共振回路の
線路インピーダンスを２０Ωとしたときの抵抗５の抵抗
値対発振周波数の特性を第２図に示す、１５ＧＨｚ帯に
て周波数可変範囲２ＧＨｚ弱が得られており、この特性
は電圧制御発振器とした場合とほぼ同等である。Specific examples of the present invention will be explained using numerical values. In Figure 1, when a FET is used as the oscillation element and the line impedance of the resonant circuit is 20Ω, Figure 2 shows the resistance value of the resistor 5 versus the oscillation frequency, and the frequency variable range is 2 GHz in the 15 GHz band. This characteristic is almost the same as that of a voltage controlled oscillator.
第２図は本発明の第２の実施例を示す回路図である。共
振回路２とバラクタダイオード３とがキャパシタ７で結
合されており、バラクタダイオードの両端に抵抗８が接
続されている。この実施例では、第１の実施例よりＱが
大きくなるので周波数可変範囲はやや狭くなるが位相雑
音及び周波数安定度が良くなるという利点がある。FIG. 2 is a circuit diagram showing a second embodiment of the present invention. The resonant circuit 2 and the varactor diode 3 are coupled through a capacitor 7, and a resistor 8 is connected to both ends of the varactor diode. In this embodiment, since the Q is larger than in the first embodiment, the frequency variable range is slightly narrower, but there are advantages in that phase noise and frequency stability are improved.
以上説明したように本発明によれば簡単な構造で外部よ
り容易に周波数を可変できるマイクロ波帯信号発生器を
実現でき、計測器或いは中継器用局部発振器等に用いて
小型かつ安価という実用的効果は非常に大きいものがあ
る。As explained above, according to the present invention, it is possible to realize a microwave band signal generator with a simple structure whose frequency can be easily varied from the outside, and it has the practical effect of being small and inexpensive when used as a local oscillator for measuring instruments or repeaters. There are very large ones.
第１図は本発明の第１の実施例を示す回路図、第２図は
第１図のものより得られる具体例の特性図、第３図は本
発明の第２の実施例を示す回路図、第４図は従来の電圧
Ｍ御型発振器を示す回路図である。
１・・・発振素子、２・・・共振回路、３・・・バラク
タダイオード、４・・・直流電源、５・・・抵抗器、６
・・・端子、７・・・キャパシタ、８・・・抵抗器。FIG. 1 is a circuit diagram showing a first embodiment of the present invention, FIG. 2 is a characteristic diagram of a specific example obtained from that in FIG. 1, and FIG. 3 is a circuit diagram showing a second embodiment of the present invention. 4 are circuit diagrams showing a conventional voltage M-controlled oscillator. DESCRIPTION OF SYMBOLS 1... Oscillation element, 2... Resonance circuit, 3... Varactor diode, 4... DC power supply, 5... Resistor, 6
...Terminal, 7...Capacitor, 8...Resistor.
Claims (1)
前記共振回路の等価線路長を可変させるバラクタダイオ
ードとを有し、前記共振回路の線路インピーダンスを低
くし、かつ前記バラクタダイオードと直列又は並列に抵
抗器が接続されていることを特徴とするマイクロ波帯信
号発生器。 ２、発振素子は、ＭＥＳＦＥＴである請求項１記載のマ
イクロ波帯信号発生器。[Claims] 1. An oscillation element, a resonant circuit coupled to the oscillation element,
A microwave characterized by comprising: a varactor diode for varying the equivalent line length of the resonant circuit, lowering the line impedance of the resonant circuit, and further comprising a resistor connected in series or parallel to the varactor diode. band signal generator. 2. The microwave band signal generator according to claim 1, wherein the oscillation element is a MESFET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28038190A JPH04154308A (en) | 1990-10-18 | 1990-10-18 | Microwave band signal generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28038190A JPH04154308A (en) | 1990-10-18 | 1990-10-18 | Microwave band signal generator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04154308A true JPH04154308A (en) | 1992-05-27 |
Family
ID=17624230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28038190A Pending JPH04154308A (en) | 1990-10-18 | 1990-10-18 | Microwave band signal generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04154308A (en) |
-
1990
- 1990-10-18 JP JP28038190A patent/JPH04154308A/en active Pending
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