JPH04153010A - Method for providing release layer on mold - Google Patents
Method for providing release layer on moldInfo
- Publication number
- JPH04153010A JPH04153010A JP28056690A JP28056690A JPH04153010A JP H04153010 A JPH04153010 A JP H04153010A JP 28056690 A JP28056690 A JP 28056690A JP 28056690 A JP28056690 A JP 28056690A JP H04153010 A JPH04153010 A JP H04153010A
- Authority
- JP
- Japan
- Prior art keywords
- mold
- nickel
- plating bath
- electroless
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 27
- 238000007747 plating Methods 0.000 claims abstract description 27
- 239000002131 composite material Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 238000005538 encapsulation Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 abstract description 20
- 239000004033 plastic Substances 0.000 abstract description 11
- 230000003287 optical effect Effects 0.000 abstract description 10
- 229920005989 resin Polymers 0.000 abstract description 8
- 239000011347 resin Substances 0.000 abstract description 8
- 239000011159 matrix material Substances 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 4
- 229910000990 Ni alloy Inorganic materials 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 2
- 229910052731 fluorine Inorganic materials 0.000 abstract 2
- 239000011737 fluorine Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 8
- 239000006082 mold release agent Substances 0.000 description 8
- -1 phosphate ester Chemical class 0.000 description 8
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 description 6
- JVTAAEKCZFNVCJ-REOHCLBHSA-N L-lactic acid Chemical compound C[C@H](O)C(O)=O JVTAAEKCZFNVCJ-REOHCLBHSA-N 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 235000019260 propionic acid Nutrition 0.000 description 4
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 3
- 229920002545 silicone oil Polymers 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000001444 catalytic combustion detection Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 239000002480 mineral oil Substances 0.000 description 2
- 235000010446 mineral oil Nutrition 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 239000012188 paraffin wax Substances 0.000 description 2
- 239000001632 sodium acetate Substances 0.000 description 2
- 235000017281 sodium acetate Nutrition 0.000 description 2
- 239000001509 sodium citrate Substances 0.000 description 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- RLJMLMKIBZAXJO-UHFFFAOYSA-N lead nitrate Chemical compound [O-][N+](=O)O[Pb]O[N+]([O-])=O RLJMLMKIBZAXJO-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- VILMUCRZVVVJCA-UHFFFAOYSA-M sodium glycolate Chemical compound [Na+].OCC([O-])=O VILMUCRZVVVJCA-UHFFFAOYSA-M 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Landscapes
- Moulds For Moulding Plastics Or The Like (AREA)
- Chemically Coating (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は半導体の封止用金型に離型層を設ける方法に関
する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for providing a release layer on a mold for encapsulating a semiconductor.
［従来の技術］
ＩＣ（集積回路）、例えばＬＳＩ（大規模集積回路）素
子の封止に使用されている黒樹脂には、離型剤が充分台
まれており、この黒樹脂を用いトランスファ成形法によ
ってＩＣ黒樹脂プラスチックパッケージが製造されてい
る。この場合、混入されている離型剤が金型表面にしみ
出すことによって脱型を容易にしている。[Prior Art] The black resin used for encapsulating IC (integrated circuit), for example, LSI (large scale integrated circuit) elements, is fully loaded with a mold release agent, and transfer molding is performed using this black resin. IC black resin plastic packages are manufactured according to the law. In this case, the mixed mold release agent oozes out onto the surface of the mold, thereby facilitating demolding.
他方、ＣＣＤ等の光学素子の封止には透明性の高い樹脂
が使用されている。この透明樹脂に離型剤を混入すると
、透過率が低下したり、撮像不良を生じたりするので、
光学素子の封止用樹脂には離型剤を含ませることが出来
ない。それ故、金型からの脱型を容易にする為に、金型
内面に、例えば、シリコーンオイル、鉱物油、パラフィ
ンワックス、フルオロアルキル含有リン酸エステルとシ
リコーンオイルとの混合物、又はポリテトラフルオロエ
チレン等の離型剤を塗布して離型性能を改善すること、
或いは金型内面に硬質クロムメツキ処理を施して、耐食
性と硬さをもたせることが知られている。On the other hand, highly transparent resin is used to seal optical elements such as CCDs. If a release agent is mixed into this transparent resin, the transmittance will decrease or imaging defects will occur.
A mold release agent cannot be included in a resin for sealing an optical element. Therefore, in order to facilitate demolding from the mold, the inner surface of the mold is coated with, for example, silicone oil, mineral oil, paraffin wax, a mixture of a fluoroalkyl-containing phosphate ester and silicone oil, or polytetrafluoroethylene. Improving mold release performance by applying a mold release agent such as
Alternatively, it is known to provide corrosion resistance and hardness by applying hard chrome plating to the inner surface of the mold.
［発明が解決しようとする課題］
これら従来のシリコーンオイル系離型剤、鉱物油及びパ
ラフィンワックス等離型剤は良好な離型性能を示すけれ
ども、離型剤がプラスチックパッケージの表面に付着し
たり、パッケージ樹脂中に混入したりして、得られるプ
ラスチックパッケージの光学特性の低下を引き起したり
、離型寿命が短いという欠点がある。ポリテトラフルオ
ロエチレンは、離型性能及び離型寿命には優れているも
のの、離型剤を金型内面に塗布する為に加熱して焼付け
をしなければならず手間がかかり、また再塗布する場合
にも多大の手間を要する。また硬質クロムメツキ処理は
、離型性能が充分ではないので、離型の際製品内に引張
り応力が加わり外観上の不良品となる。[Problems to be Solved by the Invention] Although these conventional mold release agents such as silicone oil-based mold release agents, mineral oil, and paraffin wax exhibit good mold release performance, the mold release agents may adhere to the surface of the plastic package. However, they have disadvantages such as being mixed into the package resin, causing deterioration of the optical properties of the resulting plastic package, and having a short mold release life. Polytetrafluoroethylene has excellent mold release performance and mold release life, but in order to apply the mold release agent to the inner surface of the mold, it must be heated and baked, which is time-consuming and requires reapplication. In some cases, a great deal of effort is required. Furthermore, since the hard chrome plating treatment does not have sufficient mold release performance, tensile stress is added to the product during mold release, resulting in a defective product in appearance.
本発明は上述した欠点を解消することを目的とし、優れ
た離型性能と離型寿命を有し、且つ異物の混入が極めて
少なく、優れた光学特性を有するプラスチックパッケー
ジを製造することの出来る離型剤付半導体封止用金型を
提供するものである。The present invention aims to eliminate the above-mentioned drawbacks, and is capable of producing a plastic package that has excellent mold release performance and mold release life, has very little foreign matter contamination, and has excellent optical properties. The present invention provides a mold for semiconductor encapsulation with a molding agent.
［課題を解決するための手段］
本発明者等の鋭意研究の結果、半導体封止用金型内面に
無電解複合ニッケル・メッキ法でニッケルとフッ素樹脂
との複合材膜を形成することによって、離型性能が優れ
、離型寿命が長い、且つ光学特性の優れたプラスチック
パッケージを製造し得ることを見出し、この知見に基い
て本発明を成すに至った。[Means for solving the problem] As a result of intensive research by the present inventors, by forming a composite film of nickel and fluororesin on the inner surface of a mold for semiconductor encapsulation using an electroless composite nickel plating method, We have discovered that it is possible to produce a plastic package that has excellent mold release performance, long mold release life, and excellent optical properties, and based on this knowledge, we have accomplished the present invention.
［作用］
本発明の半導体封止用金型の内面に塗布されている複合
材膜は、ニッケル・マトリックスにフッ素系樹脂粒子が
分散しているニッケル・メッキ層で、無電解ニッケル・
メッキ浴中にフッ素系樹脂粒子を添加したものをメツキ
浴とし、該メツキ浴に攪拌下半導体封止用金型を浸漬す
ることによって、金型内面に添加された粒子が付着する
と同時に析出中のニッケル合金中に取り込まれてメツキ
が形成される無電解複合ニッケル・メッキ法によって得
られたものである。本発明の金型内面の複合材膜の厚さ
は３０μｍ程度まで形成可能であるが、好ましくは４〜
６μｍである。[Function] The composite film coated on the inner surface of the semiconductor encapsulation mold of the present invention is a nickel plating layer in which fluororesin particles are dispersed in a nickel matrix.
A plating bath is prepared by adding fluororesin particles to the plating bath, and by immersing a mold for semiconductor encapsulation in the plating bath while stirring, the added particles adhere to the inner surface of the mold and at the same time the precipitated particles are removed. It was obtained using an electroless composite nickel plating method in which nickel is incorporated into a nickel alloy to form a plating. The thickness of the composite film on the inner surface of the mold of the present invention can be formed up to about 30 μm, but preferably 4 to 30 μm.
It is 6 μm.
本発明で使用されるニッケル・メッキ浴は、公知の酸性
メツキ浴であれば良く、その−例を挙げると以下の通り
である。The nickel plating bath used in the present invention may be any known acidic plating bath, examples of which are as follows.
（１）組成：
硫酸（塩化）ニッケル ２０〜３０ｇ／Ａ’次亜リン酸
ナトリウム ＩＯ〜２３ｇ／ｌ乳酸
２５〜３３ｇ／ｌプロピオン酸 １．８〜２．
５ｇ／１（２）ｐＨ４，０〜６．０
（３）温度 ８０〜ｂ上記組成中、乳
酸及びプロピオン酸のかわりに、酢酸ナトリウム、２４
〜２７ｇ／ｌとクエン酸ナトリウム：１３〜］ ７ ｇ
／ ｌとの混合液、酢酸ナトリウム１０〜１２ｇ／Ｉ
ｌ、クエン酸ナトリウム：１０〜１２ｇ／１１又はヒド
ロキシ酢酸ナトリウム：４８〜５２ｇ／ｌを使用しても
良い。(1) Composition: Nickel sulfate (chloride) 20-30g/A' Sodium hypophosphite IO-23g/l lactic acid
25-33g/l propionic acid 1.8-2.
5g/1 (2) pH 4,0-6.0 (3) Temperature 80-b In the above composition, in place of lactic acid and propionic acid, sodium acetate, 24
~27g/l and sodium citrate: 13~] 7 g
/ l, sodium acetate 10-12 g/l
1, sodium citrate: 10-12 g/11 or sodium hydroxyacetate: 48-52 g/l may be used.
上記のニッケル・メッキ浴に添加されるフッ素系樹脂粒
子は、０．０１〜０．８μｍ１好ましくは０．１〜０．
３μｍの粒径のものが使用し得る。The fluororesin particles added to the above nickel plating bath are 0.01 to 0.8 μm, preferably 0.1 to 0.8 μm.
A particle size of 3 μm can be used.
本発明のフッ素樹脂粒子の無電解ニッケル・メッキ浴へ
の添加量は２３０〜８００ｇ／Ａ’である。The amount of the fluororesin particles of the present invention added to the electroless nickel plating bath is 230 to 800 g/A'.
本発明のフッ素系樹脂としては、ガラス転移点が２６０
℃以上のもので、その−例として、ポリテトラフルオロ
エチレン、ポリクロルトリフルオロエチレン、ポリフッ
化ビニリデン、ヘキサフルオルプロピレン−テトラフル
オロエチレン共重合体及びクロルトリフルオロエチレン
−フッ化ビニリデン共重合体が挙げられ、その中でもポ
リテトラフルオロエチレンが好ましい。The fluororesin of the present invention has a glass transition point of 260
℃ or higher, such as polytetrafluoroethylene, polychlorotrifluoroethylene, polyvinylidene fluoride, hexafluoropropylene-tetrafluoroethylene copolymer, and chlorotrifluoroethylene-vinylidene fluoride copolymer. Among them, polytetrafluoroethylene is preferred.
半導体封止用金型の内面をニッケルとフッ素樹脂粒子と
の複合材膜の離型層を設ける方法としては、従来の無電
解ニッケル・メッキ法を適用し得る。その−例を以下に
示す。A conventional electroless nickel plating method can be used to provide a release layer of a composite film of nickel and fluororesin particles on the inner surface of a semiconductor encapsulation mold. An example is shown below.
前述のニッケル・酸性メツキ浴に粒径０．０１〜０．８
μｍのフッ素系樹脂粒子を２３０〜８００ｇ／ｌの割合
で添加し、攪拌をしてフッ素系樹脂粒子を均一に懸濁さ
せる。添加した粒子の分散性、懸濁性を向上させる為に
、必要に応じて公知の界面活性剤又は解こう剤を添加し
ても良い。また添加した粒子の水素イオン吸着によりｐ
Ｈが変動することがあるので、必要に応じて、乳酸又は
プロピオン酸を懸濁液に加えてｐＨを調整する。Particle size 0.01 to 0.8 in the aforementioned nickel/acid plating bath
Pm-sized fluororesin particles are added at a rate of 230 to 800 g/l and stirred to uniformly suspend the fluororesin particles. In order to improve the dispersibility and suspension properties of the added particles, a known surfactant or peptizer may be added as necessary. In addition, due to hydrogen ion adsorption of the added particles, p
Since H may vary, add lactic acid or propionic acid to the suspension to adjust the pH, if necessary.
添加したフッ素系樹脂粒子が均一に分散・懸濁した無電
解複合ニッケル・酸性メツキ浴（ｐＨ＋４．０〜６，０
、温度：８０〜１００℃）に、攪拌下で被メツキ物であ
る半導体封止用金型を浸漬することによって、該金型の
内面に３０μｍ以下、好ましくは４〜６μｍの均一の厚
さのニッケル・マトリックス中にフッ素樹脂粒子が分散
している複合材膜が形成される。Electroless composite nickel/acid plating bath (pH+4.0 to 6.0) in which the added fluororesin particles are uniformly dispersed and suspended.
, temperature: 80 to 100°C) by immersing a mold for semiconductor encapsulation, which is the object to be plated, under stirring, to coat the inner surface of the mold with a uniform thickness of 30 μm or less, preferably 4 to 6 μm. A composite film is formed with fluoropolymer particles dispersed in a nickel matrix.
本発明の方法によって離型層として複合材膜が金型内面
に形成された半導体封止用金型は、離型性能に優れ、且
つ長い離型寿命（型が汚染されるまでに連続何回の成形
が可能か）を有するとともに、長期間にわたって光学特
性の損われないプラスチックパッケージを製造し得るも
のである。A mold for semiconductor encapsulation in which a composite film is formed as a mold release layer on the inner surface of the mold by the method of the present invention has excellent mold release performance and a long mold release life (how many times can the mold be continuously used before it becomes contaminated). In addition, it is possible to manufacture plastic packages whose optical properties are not impaired over a long period of time.
［実施例コ
以下、実施例により本発明を具体的に説明するが、本発
明はこれら実施例に限定されるものではない。[Examples] The present invention will be specifically explained below with reference to Examples, but the present invention is not limited to these Examples.
実施例 下記組成のニッケル・メッキ浴ＩＩを調製した。Example A nickel plating bath II having the following composition was prepared.
硫酸ニッケル ２４ｇ／１
次亜リン酸ナトリウム ２１ｇ／ｌ
乳酸 ３０ｇ／Ａ’プロピオン酸
２ ｇ ／ １硝酸鉛
０．ＯＨ１ｇ／ｌ調製されたニッケル・メッキ浴に、攪
拌しなから粒径０．１μｍのポリテトラフルオロエチレ
ン８００ｇを添加し、均一の懸濁液を得た。得られた無
電解複合ニッケル・メッキ浴（温度：９０℃）のｐＨは
５．０であった。Nickel sulfate 24g/1 Sodium hypophosphite 21g/l Lactic acid 30g/A'propionic acid
2 g/1 lead nitrate
0. 800 g of polytetrafluoroethylene having a particle size of 0.1 μm was added to a nickel plating bath prepared with 1 g/l of OH without stirring to obtain a uniform suspension. The pH of the resulting electroless composite nickel plating bath (temperature: 90°C) was 5.0.
無電解複合ニッケル・メッキ浴に攪拌下で半導体封止用
金型を浸漬して、金型内面に４〜６μｍのニッケル・マ
トリックスにポリテトラフルオロエチレン粒子が分散し
ている均一な複合材膜を形成した。A semiconductor encapsulation mold is immersed in an electroless composite nickel plating bath under stirring to form a uniform composite film with polytetrafluoroethylene particles dispersed in a 4-6 μm nickel matrix on the inside of the mold. Formed.
得られた金型を用いて、ＣＯＤチップをリードフレーム
にダイボンド、ワイヤボンドし、透明エポキシ樹脂（屈
折率： １．５５、透過率＝９０％以上）でトランスフ
ァ成形した。成形条件は、金型温度１５０℃、成形圧力
１５０ｋｇ／ｃｄ、型内硬化時間２１０秒、ボストキュ
ア１２０℃／ｈｒである。Using the obtained mold, the COD chip was die-bonded and wire-bonded to a lead frame, and transfer molded with a transparent epoxy resin (refractive index: 1.55, transmittance = 90% or more). The molding conditions were a mold temperature of 150° C., a molding pressure of 150 kg/cd, an in-mold curing time of 210 seconds, and a boss cure of 120° C./hr.
得られたプラスチックパッケージは外観上の欠陥はなく
、すべて光学特性の損われないものであった。The obtained plastic package had no defects in appearance and all optical properties were intact.
［発明の効果］
本発明は、離型性能に優れ、離型寿命の長い、且つ長期
間にわたって光学特性の損なわれないＣＣＤプラスチッ
クパッケージを成形することの出来る離型層の設けられ
た半導体封止用金型を調製し得る。[Effects of the Invention] The present invention provides a semiconductor encapsulation provided with a mold release layer that can be used to mold a CCD plastic package that has excellent mold release performance, has a long mold release life, and whose optical properties are not impaired over a long period of time. A mold for use can be prepared.
Claims (1)
法でニッケルとフッ素樹脂との複合材膜を形成すること
を特徴とする型に離型層を設ける方法。A method for providing a mold release layer on a mold, characterized by forming a composite film of nickel and fluororesin on the inner surface of a mold for semiconductor encapsulation using an electroless composite nickel plating method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28056690A JPH04153010A (en) | 1990-10-18 | 1990-10-18 | Method for providing release layer on mold |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28056690A JPH04153010A (en) | 1990-10-18 | 1990-10-18 | Method for providing release layer on mold |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04153010A true JPH04153010A (en) | 1992-05-26 |
Family
ID=17626820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28056690A Pending JPH04153010A (en) | 1990-10-18 | 1990-10-18 | Method for providing release layer on mold |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04153010A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001060591A1 (en) * | 2000-02-15 | 2001-08-23 | Dow Global Technologies Inc. | Mold for reaction injection molding and reaction injection molding process |
| US20110070974A1 (en) * | 2009-09-22 | 2011-03-24 | Bridgestone Sports Co., Ltd. | Mold for forming golf ball and golf ball manufactured using the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55123441A (en) * | 1979-03-15 | 1980-09-22 | Hitachi Ltd | Metal mold for molding resin sealing insert |
| JPH01186309A (en) * | 1988-01-20 | 1989-07-25 | Nomura Tokin:Kk | Resin injection metal mold |
| JPH01235620A (en) * | 1988-03-16 | 1989-09-20 | T & K Internatl Kenkyusho:Kk | Resin encapsulation mold for electronic part |
-
1990
- 1990-10-18 JP JP28056690A patent/JPH04153010A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55123441A (en) * | 1979-03-15 | 1980-09-22 | Hitachi Ltd | Metal mold for molding resin sealing insert |
| JPH01186309A (en) * | 1988-01-20 | 1989-07-25 | Nomura Tokin:Kk | Resin injection metal mold |
| JPH01235620A (en) * | 1988-03-16 | 1989-09-20 | T & K Internatl Kenkyusho:Kk | Resin encapsulation mold for electronic part |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001060591A1 (en) * | 2000-02-15 | 2001-08-23 | Dow Global Technologies Inc. | Mold for reaction injection molding and reaction injection molding process |
| US6610239B2 (en) | 2000-02-15 | 2003-08-26 | Dow Global Technologies Inc. | Injection molding process using a coated mold |
| US20110070974A1 (en) * | 2009-09-22 | 2011-03-24 | Bridgestone Sports Co., Ltd. | Mold for forming golf ball and golf ball manufactured using the same |
| US8388882B2 (en) * | 2009-09-22 | 2013-03-05 | Bridgestone Sports Co., Ltd. | Mold for forming golf ball and golf ball manufactured using the same |
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