JPH04152540A - Mounting method of semiconductor device - Google Patents
Mounting method of semiconductor deviceInfo
- Publication number
- JPH04152540A JPH04152540A JP27870490A JP27870490A JPH04152540A JP H04152540 A JPH04152540 A JP H04152540A JP 27870490 A JP27870490 A JP 27870490A JP 27870490 A JP27870490 A JP 27870490A JP H04152540 A JPH04152540 A JP H04152540A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor device
- resin
- conductive
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000000853 adhesive Substances 0.000 claims abstract description 13
- 230000001070 adhesive effect Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 abstract description 26
- 239000011347 resin Substances 0.000 abstract description 26
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 238000001816 cooling Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 206010008631 Cholera Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、半導体装置の実装方法に関するもので、特に
半導体装置を基板上にフェースダウン方式で直接実装す
る方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method for mounting a semiconductor device, and particularly to a method for directly mounting a semiconductor device on a substrate in a face-down manner.
〈従来の技術〉
半導体装置を実装する方法では、様々な方式が用いられ
ているが、集積回路の多ピン化に対応して、ワイヤーポ
ンディング方式からT A B (TapeAutom
ated Bonding )及びフリップチップ
ボンディング等の実装方式が用いられる。また、フェー
スダウンで実装する方式では、導電ペースト、異方性導
電接着剤を用いたスタンピング法が最近多く採用されは
じめているが、接着剤中の導電性成分は、常に粉−に分
散されるように配慮されている。<Prior art> Various methods are used for mounting semiconductor devices, but in response to the increasing number of pins in integrated circuits, there are various methods ranging from wire bonding to T A B (Tape Auto).
Mounting methods such as bonding (attached bonding) and flip chip bonding are used. In addition, for face-down mounting methods, stamping methods using conductive paste or anisotropic conductive adhesive have recently begun to be widely adopted, but the conductive component in the adhesive is always dispersed into powder. is taken into consideration.
〈発明が解決しようとする課題〉
上記フェースダウンでの実装方法に於いて、半導体装置
上の電極サイズが、高密度実装に伴って、縮小されてく
ると、導電樹脂中の導電性成分である粒子の存在する数
が低下し、接続の信頼性や品質が低下する。これに対応
する為に、樹脂中の粒子の濃度を高めると、電極間のリ
ークや半導体装置と基板との間の接着力の低下という問
題が生じる0
そこで、本発明は高密度実装において、接続の信頼性、
品質を保つことを目的とする。<Problems to be Solved by the Invention> In the face-down mounting method described above, when the size of the electrodes on the semiconductor device is reduced due to high-density mounting, the conductive component in the conductive resin The number of particles present decreases, reducing the reliability and quality of the connection. In order to cope with this, increasing the concentration of particles in the resin causes problems such as leakage between electrodes and a decrease in adhesive strength between the semiconductor device and the substrate. Therefore, the present invention has been developed to improve the connection reliability,
The purpose is to maintain quality.
〈課題を解決するための手段〉
上記課題を解決するために、本発明は、基板上に半導体
装置をフェースダウンの状態で実装する、半導体装置の
実装方法に於いて、半導体装置の電極上に導電性接着剤
を塗布し、該接着剤中の導電性成分を電極中央部に凝集
させた後、半導体装置上の電極と基板上の電極とを接続
する方法を用いる。<Means for Solving the Problems> In order to solve the above problems, the present invention provides a mounting method for a semiconductor device in which a semiconductor device is mounted face down on a substrate. A method is used in which a conductive adhesive is applied, a conductive component in the adhesive is aggregated at the center of the electrode, and then the electrode on the semiconductor device and the electrode on the substrate are connected.
〈作 用〉
上記手段を用いることで、半導体装置と基板上電極を接
続した場合に、!極中央部付近の導電性成分の濃度が高
くなり、良好な導通が得られる。<Function> By using the above means, when the semiconductor device and the electrode on the substrate are connected,! The concentration of the conductive component near the very center becomes high, resulting in good conduction.
〈実施例〉
以下、異方性導電接着剤を用いた場合の実施例を用いて
、本発明の詳細な説明する。<Example> The present invention will be described in detail below using an example in which an anisotropic conductive adhesive is used.
第1図は、本発明の実施例で、異方性導電樹脂(以下「
樹脂」という)lを半導体装置2の電極5に塗布し、前
記半導体装置2の表面を下に向けた状態で、前記樹脂l
の中央付近に導電性成分6が集まっているところを示し
ている。第2図は、前記電極5に前記樹脂lを塗布し、
導電性成分6を樹脂lの中央部に集中させた後、配線済
基板3上の電極4にボンディングしたところを示してい
る。導電性樹脂1としては、例えば、エポキシ系接着剤
中に、導電性成分であるCu、Cの微粒子にA g+
N i+ A uのメツキをしたものが分散したもので
ある。FIG. 1 shows an example of the present invention using an anisotropic conductive resin (hereinafter referred to as "
1) is applied to the electrode 5 of the semiconductor device 2, and with the surface of the semiconductor device 2 facing downward, the resin 1 is applied.
It shows that the conductive components 6 are gathered near the center of the figure. FIG. 2 shows that the resin l is applied to the electrode 5,
The conductive component 6 is shown concentrated in the center of the resin 1 and then bonded to the electrode 4 on the wired substrate 3. As the conductive resin 1, for example, in an epoxy adhesive, fine particles of Cu and C, which are conductive components, are mixed with A g+
This is a dispersion of N i + A u plating.
次に、実装手順について説明する。Next, the implementation procedure will be explained.
半導体装置2の電極5のある能動素子面を下に向ける。The active element surface of the semiconductor device 2 with the electrode 5 is faced down.
次に、第3図に示すように、樹脂lを回転皿8にのせ、
ヌキ−シフをあて、ペースト層を広げ、上記樹脂面に電
極5を押し付け、前記樹脂1を前記電極5の面、または
、能動素子面全体に塗布し、電極5が下を向いているこ
と及び瞬間的に電極5を加熱し樹脂lの粘度を低下させ
ることにより、導電性成分6を樹脂1の中央部付近に凝
集させる。加熱方法としては、半導体装置をチャックす
るコレラ1部にヒータ(タングステン、モリブデンヒー
タ)を設け、半導体装置2の裏面を昇温したコレットで
押すことにより、前記半導体装置2の裏面から150℃
〜tSO℃付近で数秒間加熱し、エアーブローでのクー
ルダウン等により、100℃以下に冷却する方法を用い
る。Next, as shown in FIG. 3, the resin l is placed on the rotating plate 8,
Apply Nuki-Sif to spread the paste layer, press the electrode 5 on the resin surface, apply the resin 1 to the surface of the electrode 5 or the entire active element surface, and make sure that the electrode 5 is facing downward and By momentarily heating the electrode 5 and lowering the viscosity of the resin 1, the conductive component 6 is aggregated near the center of the resin 1. As a heating method, a heater (tungsten, molybdenum heater) is provided in the cholera 1 part that chucks the semiconductor device, and the back surface of the semiconductor device 2 is pressed with a heated collet to heat the semiconductor device 2 from the back surface to 150°C.
A method is used in which the material is heated for a few seconds at around tSO°C and then cooled down to 100°C or less by cooling down with air blowing or the like.
能動面全体に樹脂lを塗布した場合も、電極5は凸状に
なっているので、前記電極5が下向きになると、塗布さ
れた樹脂lも下向きに凸状になるので、電極5を下に向
け、加熱することにより、導電性成分6を樹脂1の中央
に凝集させることは可能である。Even when the resin 1 is applied to the entire active surface, the electrode 5 has a convex shape, so when the electrode 5 faces downward, the applied resin 1 also becomes convex downward, so the electrode 5 should be moved downward. By directing and heating the conductive component 6, it is possible to aggregate the conductive component 6 in the center of the resin 1.
以上の手順により、導電性成分6を樹脂lの中央に凝集
させた後、該tFM5を基板電極4に位置合せをし、接
続させるために、上記に示した加熱冷却をくり返すバI
vス加熱により、接続を行う。After the conductive component 6 is aggregated in the center of the resin 1 by the above procedure, the heating and cooling described above are repeated to align and connect the tFM 5 to the substrate electrode 4.
Connection is made by vs heating.
また、等方性導電樹脂を接着剤として用いる場合は、電
極50面にのみ、前記等方性導電樹脂を塗布し、前記と
同様の方法で、中央に凝集させた後、接続を行う。In addition, when using an isotropic conductive resin as an adhesive, the isotropic conductive resin is applied only to the electrode 50 surface, and is made to aggregate in the center in the same manner as described above, and then connection is performed.
〈発明の効果〉
以上、詳細に説明した様に、本発明を用いることにより
、導電性成分の含有量を減らしても、中央に凝集させる
ことにより、電極中央部に於いて良好な電気的な接続が
行えると共に、導電性成分の少ない周辺部に於いて、機
械的接着強度を高めることができる。さらに、接着時に
、樹脂が電極の外ににじんだ場合でも、このにじみ成分
中の導電性成分中の濃度は低くなっているので、電極間
のリークの発生も防止されるものである。<Effects of the Invention> As explained in detail above, by using the present invention, even if the content of the conductive component is reduced, good electrical conductivity can be maintained at the center of the electrode by aggregating it in the center. Not only can connection be made, but also the mechanical adhesion strength can be increased in the peripheral area where there is little conductive component. Furthermore, even if the resin bleeds out of the electrodes during adhesion, the concentration of the conductive component in this bleed component is low, so that leakage between the electrodes is also prevented.
第1図は、本発明の実施例で、導電性成分が樹脂中央部
付近に集まっているところを示す図である。
第2図は、半導体装置の電極と基板の電極とのボンディ
ング状態を示す図である。
第3口伝)及びら)は、スキージ方式を゛示す図である
。
符号の説明
1:異方性導電樹脂、 2:半導体装置、 3:基板、
4:接続用基板上配線電極、 5:接続用半導体装置
上配線電極、 6:異方性導電樹脂中の導電性成分、
7:スキージ、 8:回転皿。
代理人 弁理士 梅 1) 勝(他2名ンb
第
■
図FIG. 1 is a diagram showing a conductive component concentrated near the center of the resin in an embodiment of the present invention. FIG. 2 is a diagram showing a bonding state between an electrode of a semiconductor device and an electrode of a substrate. 3rd oral history) and et al.) are diagrams showing the squeegee method. Explanation of symbols 1: Anisotropic conductive resin, 2: Semiconductor device, 3: Substrate,
4: Wiring electrode on connection substrate, 5: Wiring electrode on semiconductor device for connection, 6: Conductive component in anisotropic conductive resin,
7: Squeegee, 8: Rotating plate. Agent Patent attorney Ume 1) Katsu (and 2 others) Figure ■
Claims (1)
する、半導体装置の実装方法に於いて、半導体装置の電
極上に導電性接着剤を塗布し、該接着剤中の導電性成分
を電極中央部に凝集させた後、半導体装置上の電極と基
板上の電極とを接続することを特徴とする、半導体装置
の実装方法。1. In a semiconductor device mounting method in which a semiconductor device is mounted face down on a substrate, a conductive adhesive is applied onto the electrode of the semiconductor device, and the conductive component in the adhesive is applied to the center of the electrode. 1. A method for mounting a semiconductor device, which comprises connecting an electrode on the semiconductor device and an electrode on a substrate after agglomerating the semiconductor device into a portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27870490A JPH04152540A (en) | 1990-10-16 | 1990-10-16 | Mounting method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27870490A JPH04152540A (en) | 1990-10-16 | 1990-10-16 | Mounting method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04152540A true JPH04152540A (en) | 1992-05-26 |
Family
ID=17601030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27870490A Pending JPH04152540A (en) | 1990-10-16 | 1990-10-16 | Mounting method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04152540A (en) |
-
1990
- 1990-10-16 JP JP27870490A patent/JPH04152540A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Kristiansen et al. | Overview of conductive adhesive interconnection technologies for LCDs | |
JP3927759B2 (en) | Mounting electronic components on a circuit board | |
JP3711873B2 (en) | Bumpless IC chip manufacturing method | |
JPH08306738A (en) | Semiconductor device and its production | |
JPH0521523A (en) | Semiconductor device mounting substrate | |
JPS601849A (en) | Connecting method of electronic part | |
JPH04152540A (en) | Mounting method of semiconductor device | |
JPH114064A (en) | Anisotropic conductive resin and mounting structure for electronic component using the same | |
JPH08236578A (en) | Flip chip mounting method of semiconductor element and bonding agent used for this method | |
JP3923248B2 (en) | Method of mounting electronic component on circuit board and circuit board | |
JP2511909B2 (en) | Method for micro-forming electrical connection material | |
JPH0778847A (en) | Packaging method for semiconductor chip | |
JP3759305B2 (en) | IC bare chip mounting method on conductive paste printed circuit | |
JP2817425B2 (en) | Semiconductor device mounting method | |
JPH05235103A (en) | Ic mounting method | |
JPH10256306A (en) | Preparation of circuit board | |
JPH04317347A (en) | Connecting method for integrated circuit element | |
JPS6386442A (en) | Ic chip for tab | |
JP2780523B2 (en) | Semiconductor device mounting method | |
JP2002009110A (en) | Semiconductor device | |
JPH06244244A (en) | Substrate for semiconductor device mounting | |
JP2000208544A (en) | Bare ic chip and semiconductor device | |
JPH11232929A (en) | Anisotropic conductive resin and semiconductor device having the anisotropic conductive resin | |
KR100357837B1 (en) | Method of lead frame manufacturing | |
JP2000208907A (en) | Mounting method for electronic component |