JPH04137426A - Electron beam generator, and image display device and recording device using the same - Google Patents

Abstract

PURPOSE:To prevent crosstalk and the like resulting from a charge-up and the like by forming a modulating electrode to the nondischarging surface side of electron emitting elements through an insulating layer, and providing a projection projecting between electron emitting element electrodes stretched to a low potential side element wiring electrode. CONSTITUTION:Between a low potential electrode 2 and a high potential electrode 1, plural electron emitting elements furnishing electron emitters 17, and a modulating electrode 3 to modulate the electron beams discharged from the electron emitting elements are provided. In this case, the modulating electrode 3 is formed at the nondischarging side of the electron emitting elements through an insulating layer 16, and a projection 15 projecting between electron emitting element electrodes which are stretched to a low potential side element wiring electrode 7 is provided. The position to provide the projection 15 is preferably on the same surface with the electron emitting elements, and its film thickness is preferably formed of a conductive thin film, and furthermore, its film thickness is preferable to be same as or thinner than the film thickness of the element electrodes. Consequently, a variation of electron emitting amount or a modulation unevenness between plural electron beams are improved remarkably, and a crosstalk between neighboring elements can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electron beam generating device that emits an electron beam in response to an information signal, and an image display device and a recording device using the electron beam generating device.

[Prior Art] Conventionally, as an element that can emit electrons with a simple structure,
For example, M.I. Ellingson (M.

1, El Inson), etc., are known. [Radio Engineering Electron Physics (Radi.

Eng, Electron, Phys,)
Vol. 10, pp. 1290-1296, 1965] Examples of this type of electron-emitting device include one using the SnO> (Sb) thin film developed by Ellingson et al., and one using an Au thin film [G. Films” (G.

Dittmer: “Th1n SolidFil
ms), vol. 9, p. 317, (1972) Ko, IT
O thin film [M. Hartwell and C.G. Fonstad “I.E.I.E. Trans.”
and C,G,Fonstad:I EEETra
ns, ED Conf, ) 519 pages.

(1975) by carbon thin film [Hisashi Araki et al.: “Vacuum °°, No. 2, No. 26, p. 122.

(1983)] have been reported.

In addition to the above, many promising electron-emitting devices such as thin-film thermal cathodes and MIM-type emitting devices have been reported.

With the rapid progress of film-forming technology and photo-1,1 sogelography technology, it is becoming possible to form a large number of elements on a substrate. Application to various image forming apparatuses is expected.

When these devices are applied to image forming devices, they are generally used as a multi-electron beam source by arranging a large number of devices on a substrate and electrically wiring each device with thin or thick film electrodes. .

These electron beam display devices basically have the following structure.

5 and 6 show an outline of a conventional display device. In this figure, 11 is a substrate, 12 is a support, 1
3 is a wiring electrode, 17 is an electron emission part, 14 is an electron passage hole,
3 is a modulation electrode, 8 is a glass plate, and 9 is an image forming member, for example, a fluorescent substance, a resist material, etc., which emit light and change color when electrons collide with them.

Consists of members that are electrically charged, altered, etc. 5 is a face plate, and lO is a bright spot of the phosphor. The electron emitting section 17 is formed by thin film technology and has a hollow structure that does not come into contact with the substrate (glass) 11. The wiring electrode 13 may be formed using the same material as the electron emitting member or a different material, and generally a material with a high melting point (low electric resistance is used).The support 12 is made of an insulating material or a conductive material. Made of body material.

These electron beam display devices emit electrons from an electron emitting part having a hollow structure by applying a voltage to a wiring electrode 13, and by applying a voltage to a modulating electrode 3 that modulates the electron flow according to an information signal. The electrons taken out are accelerated and collided with the phosphor 9. Further, an XY matrix is formed by the wiring electrode 13 and the modulation electrode 3, and an image is displayed on the phosphor 9, which is an image forming member.

Further, in FIG. 6(8), 91 is a substrate, 92 is a modulating electrode, 93 is a thermionic beam source (emitting element), 94 is an upper direction electrode, and 95 is a lower deflection! A pole 96 is a face plate provided with a transparent electrode and a phosphor (image forming member), and is an electron beam display having a configuration in which a modulating electrode 92, an electron emitting device 93, and an image forming member are sequentially arranged on a substrate 91. It is a device. Further, a side view of portion A in FIG. 6(a) is shown in FIG. 6(b). As shown in the figure, the modulation electrode 92 and thermionic beam source 93 are arranged with a space therebetween.

The thermionic beam source 93 is a tungsten wire coated with an electron emitting material, and has an outer diameter of about 35 μm, for example, and emits thermoelectrons at an operating temperature of 700 to 850°C.

[Group 1 to be Solved by the Invention] However, based on the principle of the above-mentioned conventional example, an XY Regarding the image display devices that make up the matrix, there were the following points to consider.

(2) Since the modulation electrode is arranged above the electron-emitting device in the electron-emitting direction, it is difficult to align the t8i and the electron-emitting device, making it difficult to produce a large-screen, high-definition image display device.

(2) Since the modulation t8i is placed with a space between it and the electron emission part, it is difficult to keep the distances between the modulation electrode and the emission part constant, making it difficult to create a large-screen, high-definition image display device. hard.

(2) When an attempt is made to manufacture a large-screen, high-definition image display device, the brightness unevenness of the displayed image becomes noticeable.

That is, an object of the present invention is to solve the above-mentioned manufacturing problems, facilitate alignment of a plurality of electron-emitting elements and modulation electrodes, and further reduce crosstalk caused by charge-up. An object of the present invention is to provide an electron beam generating device that can prevent the above problems, and an image display device and a recording device that can generate high-density, high-Pf18I using the same.

[Means for Solving the Problems] The present inventors have solved the above-mentioned manufacturing problem in conventional image display devices, which is the difficulty of alignment between the modulation electrode and the electron-emitting portion of the electron-emitting device, and We focused on the relationship between the occurrence of display unevenness in high-definition image display devices when they were manufactured, and as a result of intensive research, we clarified the following.

First, a slight misalignment between the electron beam passing hole of the modulation electrode and the electron emitting part of the electron emitting element has a large effect on the flight of the electron beam that reaches the image forming member, resulting in uneven brightness on the surface of the image forming member. It will happen. Furthermore, the difference in the distance between the individual modulation electrodes and the electron-emitting portions of the electron-emitting elements has a large effect on the flight of the electron beams that reach the image-forming member, resulting in uneven brightness on the surface of the image-forming member. Put it away. Based on the above findings, we have arrived at the present invention having the configuration described below.

That is, the features of the present invention include, firstly, a plurality of electron-emitting devices having an electron-emitting portion between a low-potential electrode and a high-potential electrode, and modulation for modulating an electron beam emitted from the electron-emitting devices. The modulating electrode is formed on the non-emitting surface side of the electron-emitting device with an insulating layer interposed therebetween, and the low-potential side device wiring electrode has a protrusion that protrudes between consecutive electron-emitting device electrodes. The object of the present invention is to provide an electron beam generator having the following characteristics. The position where the protrusion is provided is preferably on the same plane as the electron-emitting device. Further, the protruding portion is preferably formed of a conductive thin film, and preferably has a film thickness equal to or thinner than that of the element electrode.

Second, the image display device is provided with an image forming member that forms an image by colliding with at least the electrons on the electron emitting side of the electron beam generating device.

'tS3, the electron beam generator, and a light emitting body that emits light by irradiation with the electron beam emitted from the electron beam generator;
The object of the present invention is to provide a recording apparatus having a recording medium on which an image is recorded by irradiation of light from the light emitting body.

Fourthly, the electron beam generating device, a light emitting body that emits light by irradiation with the electron beam emitted from the electron beam generating device, and means for supporting a recording medium whose image is recorded by the irradiation of light from the light emitting body. An object of the present invention is to provide a recording device having the following features.

Hereinafter, the components and operations of the present invention will be explained in detail.

In the present invention, an electron-emitting device that is an electron source and a modulation electrode that modulates an electron beam emitted from the electron-emitting device are held on the same substrate, that is, an insulating layer is provided on the non-emitting surface side of the electron-emitting device. A modulation electrode is formed therebetween.

The electron-emitting device in the present invention may be a hot cathode, a hot cathode,
Any type of cold cathode may be used, but in the case of a hot cathode, electron emission efficiency decreases due to heat diffusion to the substrate, so a cold cathode is preferable.Furthermore, among cold cathodes, surface conduction electron By using an electron-emitting device called an electron-emitting device, the electron beam generating device, image display device, and Fuji Recording device of the present invention have the following advantages: 1) Higher electron emission efficiency can be obtained; 2) The structure is simpler. 3) Many elements can be arrayed on the same substrate; 4) Response speed is fast; 5) 1! This is particularly preferable since it has advantages such as excellent contrast. Among the above advantages, especially 5) is largely due to the fact that the surface conduction electron-emitting device is a thin film device. That is, since the modulation electrode according to the present invention is arranged on the side surface of the electron-emitting device opposite to the electron-emitting side, if the thickness of the electron-emitting device (thickness in the electron beam emission direction) is extremely thick, Since the distance between the variable m electrode and the electron emitting surface of the electron emitting device is too large, the emitted electron beam cannot be modulated sufficiently, resulting in new problems such as poor brightness contrast. Therefore,
The electron-emitting device used in the present invention has a thickness of 100 mm.
It is preferably 200μm, particularly preferably 100μm to 10μm to obtain excellent brightness contrast.
It is desirable that it is m. Here, the surface conduction type electron-emitting device is, for example, manufactured by MI Ellingson (M, 1.E
A cathode device [Radio Engineering Electron Physics (Radi.

Eng, Electron, Phys,) Volume 10, 1
290-1296, 1965], in which a voltage is applied between electrodes (device electrodes) that sandwich a small-area thin film (electron-emitting region) provided on the substrate surface, and the voltage is applied parallel to the film surface. This is an element that emits electrons when a current is passed through it. Such devices include those using a SnO2 (Sb) thin film developed by Ellingson et al., as well as those using an Au thin film [G.
Films''' (G, Dittmer: “-Th
inSolid Films”), 9 volumes.

317, - (1972)], by ITO thin film [M. Hartwell and C.G. Fonstad: ``I.E.E. Trans.E.D.
C,G.

Fonstad: “IEEE Trans, EDCo
nf,” p. 519, (1975)], by carbon thin film [Hisashi Araki et al.: “Vacuum”.

Vol. 26, No. 1, p. 22 (1983)], etc. have been reported.

In addition, we first disclosed the technology of a new type of surface conduction electron-emitting device, which we achieved after intensive study.

Surface conduction electron-emitting devices that can be used in the present invention include:
In addition to the above, the surface conduction type electron-emitting device described here may be one in which the electron-emitting portion is formed by dispersing metal fine particles, as will be described later.
．． A device having an electrode spacing of 0.01 μm to 100 μm and a thin film between the electrodes with a sheet resistance of 10 3 to 10 9 Ω/hole is shown.

Furthermore, the variable mt8i according to the present invention is an electrode for ONloFFlIJm of an electron beam emitted from an electron-emitting device by applying a voltage according to an information signal, and can be made of any conductive material. It may be formed from.

Furthermore, the insulating layer according to the present invention can be modulated with an electron-emitting device!
The base body for holding both the poles may be made of any insulating material.

In addition, such an insulating layer can be modulated! It is desirable that the thickness be uniform so that the distance between the pole and the electron emitting surface of the electron emitting device is the same for all electron emitting devices.

As described above, by integrally forming the electron-emitting device and the modulation electrode using the substrate as a medium, alignment accuracy can be improved and the problems seen in the conventional example can be solved.

Next, the protrusion of the low potential side electrode, which is the main feature of the present invention, will be explained in detail based on FIG.

As shown in the figure, the feature of the present invention is that the low-potential side element wiring electrode has a protruding part, and a plurality of electron emitting parts connected in parallel are formed on both sides of the protruding part.

That is, by making the element wiring 1t8i protrude from the surface of the element forming substrate between a plurality of arrayed electron-emitting elements, the influence of the electron beam emitted from electron emission on adjacent elements is suppressed, and crosstalk between adjacent elements is suppressed. The main purpose is to prevent

Furthermore, it is possible to effectively suppress charge-up due to accumulation of electrons or ions irradiated onto the element formation substrate, and to realize a good electron beam generating device that suppresses distortion of the electric field due to charge-up near the electron emission part. .

In FIG. 1, 1 and 2 are element electrodes connected to element wiring electrodes 6 and 7, respectively. A conductive thin film 4 is formed between a pair of device electrodes so as to partially protrude onto the device electrodes, and the thin film between the device electrodes is an electron emitting portion 17 . 15
is a 1-shaped protrusion and is provided on the element wiring electrode 7 on the low potential side. In this way, by making the protrusion protrude from the low-potential side wiring electrode between the electron-emitting elements, the electric field on the electron-emitting element is controlled and the electron beam is shaped. Furthermore, if falling electrons fall onto this protrusion, they are grounded as they are, which also has the effect of suppressing charge-up. In order to enhance this charge-up suppression effect, the protrusion 15
In Fig. 1, 3 is a variable m electrode, which is not shown in Fig. 1, but is shown in Fig. 2 (AA' cross-sectional view). As shown, element electrodes are formed on this with an insulator 16 in between.

The manufacturing method and material of the electron beam generator of the present invention are not limited as long as it has the above configuration.

Next, an image display device using the electron beam generator of the present invention will be described with reference to FIG.

FIG. 7 shows the structure of the display panel. In the figure, 47 is a glass vacuum container, and 41, which is a part of the vacuum container, is a face plate on the display surface side. face plate 4
A transparent electrode made of ITO, for example, is formed on the inner surface of the electrode 1, and red, green, and blue phosphors (image forming members) are painted on the inside in a mosaic pattern, which is well known in the CRT field. Metal back treatment has been applied.

Further, the transparent electrode is connected to a terminal 4 for applying an accelerating voltage.
3, it is electrically connected to the outside of the vacuum vessel.

Furthermore, the electron beam generator of the present invention is fixed to the bottom surface of the vacuum container 47. Reference numeral 16 denotes an insulator, and on its upper surface, N electron-emitting devices are arranged in one row. The electron-emitting device groups are electrically connected in parallel in each column, and the positive electrode side wiring (negative electrode side wiring) 44 of each column is connected to the terminal D.
It is electrically connected to the outside of the vacuum container through P+ to DpA (terminals Dm, to DmJ2).

Further, a grid electrode (modulation electrode) 3 is provided on the back surface of the insulator 16 with the insulator 16 interposed therebetween. N such grid electrodes (modulated electrodes 8i) 3 are provided perpendicularly to the element array, and each grid electrode (modulated electrode 8i)
The poles) 3 are electrically connected to the outside of the vacuum vessel through terminals 46 (Gl to GN).

This display panel has A rows of electron-emitting devices (line electron-emitting devices) and N rows of grid electrodes (modulation electrodes).
An XY matrix is constructed. By sequentially driving (scanning) the electron-emitting device rows one by one and simultaneously applying a modulation signal for one line of the image to the grid electrode (modulation electrode) according to the information signal, the fluorescence of each electron beam is It controls the irradiation to the body and displays the image line by line.

The above-mentioned image display device is an image display device that can obtain display images with high resolution, uniform brightness, high brightness, and high contrast due to the advantages of the electron beam generator of the present invention described above. becomes.

Next, the recording device using the electron beam generating device of the present invention was installed in the eighth
As shown in the figure.

Figure 8 shows the schematic structure of an optical printer, and in the figure,
Reference numeral 47 designates a glass vacuum container, and 41, which is a part of the container, represents a face plate from which a light beam is emitted toward the recording medium 45. A transparent electrode made of, for example, ITO is formed on the inner surface of the face plate 41, and a phosphor (light-emitting material) is disposed inside the electrode, and a metal back treatment known in the CRT field is applied. 6 (
(The transparent electrode, phosphor, and metal back are not shown.) Furthermore, the transparent electrode is electrically connected to the outside of the vacuum vessel through a terminal 43 for applying an accelerating voltage.

Further, the electron beam generating device of the present invention described above is fixed to the bottom surface of the vacuum container 47. Reference numeral 16 denotes an insulator, and electron-emitting devices are arranged in a row on the upper surface of the insulator. The positive electrode side wiring (negative electrode side wiring 44) of the electron-emitting device group is electrically connected to the outside of the vacuum container through terminals Dp...Dm.

Furthermore, grid electrodes (modulation electrodes) are laminated with an insulator 16 in between. Such a grid electrode (variable m electrode) 3 is
N grid electrodes (modulation electrodes) 3 are provided perpendicularly to the element array, and each grid electrode (modulation electrode) 3 is electrically connected to the outside of the vacuum vessel through a terminal 46 (G, to GN).

In this optical printer, the phosphor of each electron beam is Controls irradiation to the (light-emitting body) and forms a light-emitting pattern for one line of the image. The light beam emitted from the light emitting body according to the light emitting pattern is irradiated onto the recording medium, and when the recording medium is a photosensitive material, a photosensitive pattern is formed, and when the recording medium is a heat sensitive material, a photosensitive pattern is formed. A heat-sensitive pattern is formed on the surface of the recording medium. By sequentially repeating the above operations for all image lines while scanning the recording medium or the light emitting source 51 line by line as shown in FIGS. 9(a) and 9(b), the surface of the recording medium is covered. Record images. Here, the recording medium may be a photosensitive (/lA thermal) sheet 54, and in this case, the recording device has a support (for example, a drum 52, a conveyance roller 53) for supporting the sheet. ing. Further, the recording medium may be a photosensitive drum 64 as shown in FIG.

$10 To explain the apparatus shown in the figure, in addition to the light emitting source 61, a developing device 65, a static eliminator 66, a cleaner 67, and a charger 68 are installed around the photosensitive drum 64, which is a recording medium, in order along the rotational direction. is provided.

First, the recording medium 64 is charged by the charger 68 . ;w
The appropriate voltage for it is 100 to 500V, but it is not limited to this. An image is displayed by the light emitted from the zero-order light source 61, and the light of this image is irradiated onto the photosensitive drum 64, causing the photosensitive drum 64 is exposed. The photosensitive portion of the photosensitive drum 64 is neutralized, and the non-exposed portion attracts toner supplied from the developing device 65.

The portion that has attracted the toner moves as the photosensitive drum 64 rotates, and when the IF charge is canceled by the static eliminator 66,
The adsorbed toner falls out.

At this time, a paper 69 on which an image is to be formed is located between the photosensitive drum 64 and the static eliminator 66, and the toner is transferred to the paper 69.
be dropped above.

The paper 69 that has received the toner moves to a fixing device (not shown), where the toner is fixed on the paper 69,
The image represented by the light emitting source 61 is reproduced and recorded on the paper 69.

On the other hand, the photosensitive drum 64 further rotates and is driven to a cleaner 67, where the remaining toner is removed, and the photosensitive drum 64 is further charged by a charger 68.

Due to the advantages of the electron beam generating device of the present invention described above, the recording device described above has particularly high resolution, high speed, no exposure unevenness, and can obtain clear recorded images with high contrast.

Next, regarding the specific dimensions of the constituent elements of the electron beam generator of the present invention, the thickness of the substrate does not particularly affect the element characteristics, but from the viewpoint of mechanical strength etc.
, E1mm to 1mm is preferable, and for the modulation electrode,
Film thickness: 0.01 μm to 1 mm % Width: 0.05 μm or more, preferably 0.1 μm to 200 μm for insulators
μm is preferable, and the film thickness of the protruding portion 15 of the low potential side electrode according to the present invention may be equal to or less than the element electrode thickness, specifically, 0.05 μm to 10 μm, or The shape can be appropriately selected such as rectangular, square, or T-shape, but if the protrusion overlaps the modulation electrode formed through the insulating layer, the modulation voltage may increase. It is desirable that there is less overlap with the electrodes.

[Example] Example 1 The electron beam generator of the present invention shown in Fig. 1.2 was manufactured in the following manner.

First, a quartz glass serving as the insulating substrate 11 was sufficiently cleaned, and then a resist pattern for forming a modulation electrode was formed on the quartz glass using a normal photolithography technique.

Next, 50 thick Ti and 950 thick Ni were formed on the entire surface of the glass on which a resist pattern had been formed by vacuum evaporation, and then the resist pattern was peeled off to form the modulating electrode 3.

Next, using RF sputtering method, a 5i02 thin film of 1.5
The insulator 16 was obtained by forming the insulator 16 to have a thickness of μm.

Using a method similar to the method for forming the modulation electrode on the above-mentioned insulator, an element wiring electrode 1.2 having a thickness of 50N7i and a thickness of 950Ni and a protrusion 15 similar to the modulation electrode &6,
7 was formed. All electrode widths are 15 μm, element electrodes 1 and 2
The gap between them was 2 μm.

Next, in order to form a conductive thin film including an electron-emitting region, first, a Cr thin film with a thickness of 1000 nm was formed on the entire surface of the substrate on which the device electrodes were formed by vacuum evaporation, and then a desired shape was formed using photolithography technology. Cr in the conductive thin film formation region of
The thin film was removed by etching.

After spin-coating an organic solvent containing an organic palladium compound (Catapaste CCP manufactured by Okuno Pharmaceutical Co., Ltd.),
C. for 12 minutes to form a conductive thin film made of palladium. Thereafter, the remaining Cr thin film was removed to obtain an electron beam generator of the present invention.

The electron beam generator and fluorescent screen thus obtained were heated to ~2xlO
Place the element electrode 1 in a vacuum container at -6 torr and connect it to +14V.
When an electron beam was generated with the element electrode 2 at ground potential and the fluorescent screen at +IKV, and the modulation electrode 3 at ground potential, spot light emission corresponding to the electron emitting portion was observed on the fluorescent screen.

Further, when a voltage of -4OV to +30V was applied to the modulation electrode 3 under the above conditions, the amount of electron beam reaching the fluorescent screen varied continuously depending on the applied voltage, confirming the function of the modulation electrode 3.

Further, by providing the protrusion 15, the spread of the electron beam in the direction perpendicular to the element gap was suppressed to a small extent, and crosstalk with adjacent elements did not occur.

Example 2 FIG. 3 shows a second embodiment of the invention.

The manufacturing process of the electron beam generator in this example used the same method as in Example 1.

In addition, in this embodiment, in order to prevent charge-up of the insulating substrate portion near the electron-emitting part, an attempt was made to provide a protrusion 15 to regulate the potential.
As shown in FIG.
The conductive thin film forming the electron emitting portion 17 was formed in the gap between the device electrodes and on the device electrode.

When the luminescent spot of the thus obtained electron beam generator was observed under the same conditions as in Example 1, a circular luminescent spot was obtained, and a good electron beam generator without crosstalk was obtained. .

Example 3 An image display device shown in FIG. 7 was manufactured.

A plurality of electron-emitting devices are arranged in a line at a pitch of 2 mm.
A rear plate (substrate) was prepared in exactly the same manner as in Example 1, except that a plurality of modulation electrodes 3 were arranged perpendicularly to the line-shaped electron-emitting devices, and Cu, which was the wiring electrode 6.7, was laminated to a thickness of 2 μm. 42 blue plate glass (manufactured by Ichikawa Special Glass Co., Ltd.)
An electron beam generator was formed on top.

Next, the face plate 41 having the phosphor, which is an image forming member, is attached to the rear plate 42 by 65 mm (-111 iL,
An image display device was fabricated.

A voltage of 1.5 KV is applied to the phosphor surface, and a pair of wiring electrodes 6. ), a voltage pulse of 14 V was applied to cause electrons to be emitted from a plurality of electron-emitting devices arranged in a line. At the same time, the electron beam was controlled 0N10FF by applying a voltage to the modulated 1it8i group as an information signal.

Further, a voltage pulse was applied to the adjacent wiring electrode to perform the above-mentioned one-line display. This was done sequentially to form one screen image. In other words, wiring! It was possible to display images by forming an XY matrix with the scanning electrodes and modulation electrodes using the poles as scanning electrodes.

The surface conduction electron-emitting device used in this example can be driven in response to voltage pulses of 100 picoseconds or less, so if one screen is displayed in 1/30th of a second, the number of scanning lines will be more than 10,000. can be formed.

Further, the voltage applied to the modulation electrode 46 was controlled to turn off the electron beam at −4 OV or less, and turned on at 30 V or more.

Further, the amount of electron beam changed continuously between -4Ov and 30V. Therefore, gradation display was possible by changing the voltage applied to the modulation electrode.

The reason why the electron beam can be controlled by the voltage applied to the modulation electrode 3 is that the electron beam is controlled by the voltage applied to the modulation electrode 3.
It is based on the fact that the nearby potential changes from positive to negative, causing the electron beam to accelerate or decelerate.

As explained above, in this example, the electron-emitting device and the modulation electrode are laminated via an insulating substrate, so alignment is easy, and since they are manufactured using thin film manufacturing technology,
It was possible to obtain a large, high-definition display at a low price. Furthermore, the distance between the electron emitting section 17 and the modulation electrode 3 can be manufactured with extremely high precision, and a high-resolution image display device can be obtained.

In surface conduction electron-emitting devices, electrons with an initial velocity of several volts are emitted into a vacuum, and the present invention is extremely effective for modulating such devices. Additionally, the entire displayed image has high brightness and high contrast, with no uneven brightness.

Example 4 An optical printer shown in FIG. 8 was manufactured.

The recording medium 45 was prepared by uniformly applying a photosensitive composition having the following composition onto a polyethylene terephthalate film to a thickness of 2 μm. The photosensitive composition is a, binder: polyethylene methacrylate (trade name DIANAL BR, Mitsubishi Rayon) 10! Quantity parts, b, 1,000 mercotrimethylolbroban triacrylate (trade name: TMPT
A.

Shin Nakamura Chemical) 10! Parts by weight, C0 Polymerization initiator: 2.2 parts by weight of 2-methyl-2-morpholino(4-thiomethylphenyl)propan-1-quine (trade name Irgacure 907, Ciba Geigy), methyl ethyl ketone as a solvent. It was prepared using 70 parts by weight.

The phosphor of the face plate 41 is a silicate phosphor (Ba
, Mg, Zn)s Si, o,: pb" was used.

Further, the light emitting source 48 was manufactured in the same manner as in Example 1.

Next, the driving method of this embodiment will be explained using FIG. 9(a). In FIG.
is a support body for the recording medium 45, and 53 is a conveyance roller for the recording medium 45. Here, the light emitting source 51 is the recording medium 5.
4 and at a position of 1 mm or less away from each other.

In this example, the irradiation of each electron beam onto the phosphor is controlled by simultaneously applying a modulation signal for one line of the image to the modulation electrode according to the information signal in synchronization with driving the electron-emitting device array. Then, a light emitting pattern for one line of the image is formed. The light beam emitted from the light emitter according to the light emitting pattern is irradiated onto the recording medium, and the irradiated recording medium is photopolymerized and hardened.Next, the transport roller 53 is moved to perform a similar drive. By performing such driving, a photopolymerization pattern corresponding to the information signal is formed on the recording medium as a photopolymerization pattern. An optical recording pattern was formed on polyethylene terephthalate by developing this photopolymerized pattern with methyl ethyl ketone.

The optical printer of this example produced a uniform, high-speed, high-contrast, and clear optical recording pattern.

Example 5 An optical printer shown in FIG. 10 was manufactured. The wood example is
A yellow-green emitting phosphor of Zn and 5in4:Mn (Pi phosphor) was used as the phosphor, and an amorphous silicon photoreceptor was used as the electrophotographic photoreceptor.

Due to the above-described advantages of the electron beam generator of the present invention, this recording apparatus was able to provide high resolution, high speed, no exposure unevenness, high contrast, and clear recorded images.

[Effects of the Invention] The electron beam generating device of the present invention described above can obtain a sufficient amount of electron emission compared to the conventional one, and can prevent unintended fluctuations in the amount of electron emission during driving and modulation between multiple electron beams. The unevenness has been significantly improved. Furthermore, the electron beam generator of the present invention prevents crosstalk between adjacent elements, resulting in an extremely high-definition electron beam generator.

Furthermore, in the image display device using the electron beam generator of the present invention, the contrast of the displayed image was excellent, and the image display device had high brightness and little brightness unevenness.

Further, even in a recording device using the electron beam generating device of the present invention, the contrast of the recorded image was excellent and a clear image could be provided.

Furthermore, in the image display device and recording device, the electron beam generating device of the present invention does not cause problems in electron emission and modulation of the electron beam as in the past even if the electron-emitting devices are arranged in high density. High-resolution, high-definition, high-speed display images and recorded images can be formed.

[Brief explanation of drawings]

FIG. 1 is a diagram showing an embodiment of the electron beam generator of the present invention,
FIG. 2 is a sectional view along line AA', FIG. 3 is a diagram showing a different embodiment, FIG. 4 is a sectional view along BB', and FIGS. 5 and 6 are image display devices using conventional electron-emitting devices. FIG. 7 is a diagram showing an embodiment of the image display device of the present invention, and FIG.
9 and 10 are diagrams showing an embodiment of the recording apparatus of the present invention. 1: High potential side element electrode 2: Low potential side element electrode 3: Modulation electrode 4: Conductive thin film 5: Face plate 6: High potential side element wiring electrode 7: Low potential side element wiring electrode 8 Glass plate 9: Image formation Member 10: Bright spot of phosphor 1 Substrate 12: Support 13: Wiring electrode 14: Electron passage hole 15: Projection 16: Insulator 17: Electron emission section 41: Face plate 42: Substrate 43: Accelerating voltage application terminal 44: Wiring terminal 45: Recorded object 46: Modulating electrode terminal 47: Vacuum container 51; Light emitting source 52 Ni drum 53: Conveying roller 54: Photosensitive sheet 61: Light emitting source
64: Photosensitive drum 65: Developing device 66: Static eliminator 67: Cleaner 68: Charger 69: Paper 91: Substrate 92: Modulation electrode 93: Thermionic beam source 94: Upper deflection 1
Pole 95: Lower deflection electrode 96: Face plate

Claims (6)

[Claims] (1) A plurality of electron-emitting devices having electron-emitting parts between a low-potential electrode and a high-potential electrode, and a modulation electrode that modulates an electron beam emitted from the electron-emitting devices, and the modulation electrode is an electron-emitting device. It is formed on the non-emission side of the
An electron beam generating device characterized in that the low potential side element wiring electrode has a protrusion projecting between consecutive electron emitting element electrodes. (2) The electron beam generating device according to claim (1), wherein the protrusion is provided at a position on the same surface as the electron-emitting device. (3) The protrusion is formed from a conductive thin film, and
The electron beam generating device according to claim 1 or 2, wherein the film thickness of the protrusion is equal to or thinner than that of the element electrode. (4) An image characterized in that the electron beam generating device according to any one of claims (1) to (3) is provided with at least an image forming member that forms an image by collision with the electrons on the electron emission side. Display device. (5) The electron beam generator according to claims (1) to (3);
A recording device comprising: a light-emitting body that emits light when irradiated with an electron beam emitted from the electron beam generator; and a recording medium on which an image is recorded by irradiation with light from the light-emitting body. (6) The electron beam generator according to claims (1) to (3);
A recording device comprising: a light-emitting body that emits light when irradiated with an electron beam emitted from the electron beam generator; and means for supporting a recording medium on which an image is recorded by irradiation with light from the light-emitting body.