JPH0413567A - Polishing device - Google Patents
Polishing deviceInfo
- Publication number
- JPH0413567A JPH0413567A JP2114543A JP11454390A JPH0413567A JP H0413567 A JPH0413567 A JP H0413567A JP 2114543 A JP2114543 A JP 2114543A JP 11454390 A JP11454390 A JP 11454390A JP H0413567 A JPH0413567 A JP H0413567A
- Authority
- JP
- Japan
- Prior art keywords
- carrier plate
- polishing
- plate
- polished
- guide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 65
- 239000000463 material Substances 0.000 claims abstract description 33
- 239000007788 liquid Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000004744 fabric Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 241000220317 Rosa Species 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007518 final polishing process Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体ウェーハ等、特に、５ｏｌ（Ｓｉｌｉ
ｃｏｎ Ｏｎ Ｉｎ５ｕｌａｔｅｒ）基板のような被研
磨材の表面を研磨する研磨装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention is applicable to semiconductor wafers, etc., particularly 5ol (Silicon
The present invention relates to a polishing apparatus for polishing the surface of a material to be polished, such as a substrate.
上面が研磨面となっている定盤が剛体である場合、被研
磨材を上記研磨面に接触する時点において、咳研磨材が
半導体ウェーハ等の硬脆性材料のために、上記被研磨材
に欠けが発生したり、あるいは強制駆動をかけた際に割
れが生じ易く、熟練した作業者の手動操作による研磨作
業に頼っていた。If the surface plate whose upper surface is a polishing surface is a rigid body, when the material to be polished comes into contact with the polishing surface, the material to be polished may be chipped due to the hard brittle material such as a semiconductor wafer. This tends to cause cracking or cracking when forced driving is applied, and the polishing work has been dependent on manual operations by skilled workers.
また、現在までの研磨布を使用したメカノケミカル研磨
においては、ウェーハと研磨布との間に摩擦熱が生じ、
キャリアプレートの熱歪みによるたわみが避けがたいと
いう問題があり、研磨布の代わりに剛体を使用する場合
には、剛体とウェーハとの間の摩擦熱の発生が少なく、
ケミカル研磨の能率を上げるために、研磨スラリー及び
剛体の下定盤を加温する必要がある。そして、研磨布を
使用したメカノケミカル研磨と同様に剛体の下定盤を使
用した研磨においても、キャリアプレートの上面とウェ
ーハ取付面との間とで温度差が生じ、キャリアプレート
の熱歪みによるたわみが発生する。この熱歪みによるキ
ャリアプレートのたわみは、キャリアプレートに吸着す
るウェー／％を弾性変形させ、その状態で研磨されるた
めに、研磨精度、特にＴ Ｔ Ｖ （Ｔｏｔａｌ Ｔｈ
１ｃｋｎｅｓｓ Ｖａｒｉａｔｉｏｎ）か悪いものにな
る（第２図参照、ここで符号１は下定盤、２はキャリア
プレート、３はウェーハ４は支持部材、５は加圧軸を示
している）。In addition, in mechanochemical polishing that uses a polishing cloth to date, frictional heat is generated between the wafer and the polishing cloth.
There is a problem that deflection due to thermal distortion of the carrier plate is unavoidable, and when a rigid body is used instead of a polishing cloth, there is less frictional heat generated between the rigid body and the wafer.
In order to increase the efficiency of chemical polishing, it is necessary to heat the polishing slurry and the rigid lower surface plate. Similar to mechanochemical polishing using a polishing cloth, polishing using a rigid lower surface plate also creates a temperature difference between the top surface of the carrier plate and the wafer mounting surface, causing the carrier plate to bend due to thermal distortion. Occur. The deflection of the carrier plate due to this thermal strain causes elastic deformation of the wafers adsorbed on the carrier plate, and the wafers adsorbed on the carrier plate are polished in that state.
1ckness Variation) or worse (see FIG. 2, where 1 is a lower surface plate, 2 is a carrier plate, 3 is a wafer 4 is a support member, and 5 is a pressurizing shaft).
そこで、この問題を解決するために、第３図に示すよう
に、キャリアプレート２と支持部材４との間にＯリング
６を配置して、キャリアプレート２の上面に空隙を設け
て断熱を図ると、キャリアプレート２の加圧時に、キャ
リアプレート２が弾性変形して良好な研磨面を得られな
いという問題がある。Therefore, in order to solve this problem, as shown in FIG. 3, an O-ring 6 is disposed between the carrier plate 2 and the support member 4, and a gap is provided on the upper surface of the carrier plate 2 for heat insulation. Then, when the carrier plate 2 is pressurized, the carrier plate 2 is elastically deformed and a good polishing surface cannot be obtained.
このため、キャリアプレートの上面に均一な所定の流体
圧力を作用して、キャリアプレート上面の押圧力を等分
布として研磨精度の向上を達成するものが提案されてい
る（特開昭６４−２８５７号、実開昭６２−１６５８４
９号及び特開昭６４４５５６６号公報参照）。For this reason, it has been proposed to apply a uniform predetermined fluid pressure to the upper surface of the carrier plate to uniformly distribute the pressing force on the upper surface of the carrier plate to improve polishing accuracy (Japanese Patent Laid-Open No. 64-2857). , Utsukai Sho 62-16584
9 and Japanese Patent Application Laid-Open No. 6445566).
しかしながら、」１記いずれの方法にあっても、研磨時
の下定盤とウェーハとの間に発生する摩擦力（ラジアル
荷重）を支持案内できず、加圧力及び回転速度を大きく
てきないという問題があった。However, with any of the methods described in 1., there is a problem that the frictional force (radial load) generated between the lower surface plate and the wafer during polishing cannot be supported and guided, and the pressing force and rotation speed cannot be increased. there were.
また、キャリアプレートの側面で熱か放散し易く、熱歪
みが発生し易い状態となり、研磨温度を高く上げられな
い問題があった。In addition, heat is easily dissipated on the side surface of the carrier plate, resulting in a state where thermal distortion is likely to occur, and there is a problem that the polishing temperature cannot be raised to a high temperature.
本発明は、上記事情に鑑みてなされたもので、その目的
とするところは、研磨時に定盤と被研磨材（ウェーハ）
との間に発生するラジアル荷重を円滑にかつ確実に支持
案内することができ、加圧力及び回転速度を大幅に上げ
ることができる上に、キャリアプレートでの熱放散を低
減することかできて、熱歪みを抑制することができ、か
つ研磨温度を高く上げることができると共に、被研磨材
と定盤との接触時あるいは強制駆動時においても、被研
磨材に欠け１割れ等が生じることを防止できる研磨装置
を提供することにある。The present invention has been made in view of the above circumstances, and its purpose is to remove the surface plate and the material to be polished (wafer) during polishing.
It is possible to smoothly and reliably support and guide the radial load generated between the carrier plate, significantly increase the pressing force and rotation speed, and reduce heat dissipation in the carrier plate. It is possible to suppress thermal distortion, raise the polishing temperature to a high level, and prevent the occurrence of chips, cracks, etc. on the polished material even when the polished material contacts the surface plate or is forced to drive. Our goal is to provide a polishing device that can.
上記目的を達成するために、本発明の研磨装置は、下面
に被研磨材が固定されたキャリアプレートを、上面か研
磨面となっている定盤に、押圧した状態で上記キャリア
プレート及び定盤を同一方向に回転させて、上記被研磨
材の表面と上記定盤の研磨面との間に相対運動を与えつ
つ上記定盤の研磨面に研磨液を供給して、被研磨材表面
を研磨する研磨装置において、上記キャリアプレートの
上面にベローズを配置し、かつ上記キャリアプレートの
側面に、研磨時のラジアル負荷を保持するガイドを設け
たものである。In order to achieve the above object, the polishing apparatus of the present invention includes a carrier plate having a material to be polished fixed to the lower surface thereof, and the carrier plate and the surface plate being pressed against the surface plate whose upper surface is the polishing surface. are rotated in the same direction to provide relative motion between the surface of the material to be polished and the polishing surface of the surface plate while supplying a polishing liquid to the polishing surface of the surface plate to polish the surface of the material to be polished. In the polishing apparatus, a bellows is arranged on the upper surface of the carrier plate, and a guide is provided on the side surface of the carrier plate to hold the radial load during polishing.
本発明の研磨装置にあっては、ベローズによって、キャ
リアプレートを上下方向に移動自在に支持すると共に、
ガイドによって、研磨時に定盤と被研磨材との間に発生
する摩擦力（ラジアル荷重）を保持して安定した研磨状
態を得ると共に、ガイドによりキャリアプレートの側面
を保持することによって、キャリアプレートの側面での
熱の放散を抑制し、かつベローズとガイドとによって支
持されたキャリアプレートによって、被研磨材と定盤と
の接触時あるいは強制駆動時に、被研磨材に急激に大き
な負荷かかかることかなく、被研磨材の欠け１割れ等の
損傷か未然に防止される。In the polishing apparatus of the present invention, the carrier plate is movably supported in the vertical direction by the bellows, and
The guide maintains the frictional force (radial load) generated between the surface plate and the material to be polished during polishing to obtain a stable polishing condition, and the guide also holds the sides of the carrier plate. The carrier plate, which suppresses heat dissipation on the sides and is supported by bellows and guides, prevents sudden large loads from being applied to the material to be polished when it comes into contact with the surface plate or when it is forced to drive. This prevents damage such as chipping or cracking of the material to be polished.
以下、第１図に基ついて本発明の一実施例を説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図において符号１０は、回転軸線ｅ、を中心にして
回転自在に設けられた剛体製の定盤であり、この定盤１
０の上面１０ａか研磨面とされている。In FIG. 1, reference numeral 10 denotes a rigid surface plate that is rotatably provided around the rotation axis e, and this surface plate 1
The upper surface 10a of 0 is a polished surface.
そして、上記定盤１０の上方には、円盤状のキャリアプ
レート１１か接近、離間自在に設けられており、このキ
ャリアプレート１１の下部は上部に比べて小径に形成さ
れている。また、上記キャリアプレート］】の小径の下
部の外周面には環状のガイド部材１２が設けられ、かつ
このガイド部材１２の上面には筒状のガイド部材１３が
取付けられている。そして、これらのガイド部材１２，
１３によって、上記キャリアプレート１１は、上下動可
動にかつ水平面に対してキャリアプレート１１の軸線を
中心にして若干傾斜可能に支持されている。さらに、上
記キャリアプレート１１の上面外縁部には、連結プレー
ト１４を介して、金属へローズ１５が取付けられており
、この金属ベローズ１５の上端及び上記ガイド部材１３
の上面には、リング状の支持部材１６を介して、加圧軸
１７が取付られている。A disk-shaped carrier plate 11 is provided above the surface plate 10 so as to be able to approach and move away from the carrier plate 11, and the lower part of the carrier plate 11 is formed to have a smaller diameter than the upper part. Further, an annular guide member 12 is provided on the outer peripheral surface of the small diameter lower part of the carrier plate, and a cylindrical guide member 13 is attached to the upper surface of this guide member 12. And these guide members 12,
13, the carrier plate 11 is supported so as to be vertically movable and slightly tiltable about the axis of the carrier plate 11 with respect to a horizontal plane. Further, a metal bellows 15 is attached to the outer edge of the upper surface of the carrier plate 11 via a connecting plate 14, and the upper end of the metal bellows 15 and the guide member 13
A pressurizing shaft 17 is attached to the upper surface of the pressurizing shaft 17 via a ring-shaped support member 16.
上記加圧軸１７は、その回転軸線１を中心にして回転自
在に設けられており、この加圧軸１７には、上記定盤１
０と同一方向に加圧軸１７を回転させる回転駆動機構（
図示せず）が設けられている。また、上記加圧軸１７の
内部には、金属ベローズ１５．連結プレート１４及びキ
ャリアプレート１１で構成された空間内に加圧気体を供
給するエア通路１８が形成されていると共に、上記空間
内を通る配管１９及びキャリアプレー１−１１の中央内
部を貫通して形成された挿通孔２０を介して、上記キャ
リアプレート１１の下面１１Ｈにシリコンウェーハ（被
研磨材）２１を吸着するための吸引通路２２が形成され
ている。そして、上記エア通路１８には、加圧気体源及
び真空吸引源かそれぞれ切換可能に連結され、かつ吸引
通路２２には、真空吸引源が連結されている。The pressure shaft 17 is rotatably provided around the rotation axis 1, and the pressure shaft 17 is provided with the surface plate 1.
A rotational drive mechanism (
(not shown) is provided. Further, inside the pressure shaft 17, a metal bellows 15. An air passage 18 for supplying pressurized gas is formed in the space formed by the connection plate 14 and the carrier plate 11, and an air passage 18 is formed that passes through the space and the center of the carrier plate 1-11. A suction passage 22 for suctioning a silicon wafer (material to be polished) 21 is formed on the lower surface 11H of the carrier plate 11 through the formed insertion hole 20. The air passage 18 is connected to a pressurized gas source and a vacuum suction source in a switchable manner, and the suction passage 22 is connected to a vacuum suction source.
上記のように構成された研磨装置を用いてシリコンウェ
ーハ２１の表面を研磨する場合には、まず、定盤１０と
キャリアプレート１１を離間した状態において、加圧軸
１７の吸引通路２２．配管１９、キャリアプレート１１
の挿通孔２０を介して真空吸引によってキャリアプレー
ト１１の下面１１ａにシリコンウェーハ２１を吸着する
と共に、加圧軸１７のエア通Ｆ！＠１８に真空吸引源を
連結して真空吸引することにより、キャリアプレート１
１及び金属ベローズ１５を加圧軸１７方向に吸弓して、
キャリアプレート１１及び金属ベローズ１５の荷重をほ
ぼＯとした状態において、加圧軸１７を定盤１０に高速
で接近させる。この場合、キャリアプレート１１及び金
属ベローズ１５の荷重が真空吸引の吸引力によって相殺
されているので、キャリアプレート１１の下面１１Ｈに
吸着されているシリコンウェーハ２１は、定盤１０に衝
撃を与えられることな（円滑に接触し、／リコンウェー
ハ２１か欠ける等の不具合か発生しない。When polishing the surface of the silicon wafer 21 using the polishing apparatus configured as described above, first, with the surface plate 10 and the carrier plate 11 separated from each other, the suction passage 22 of the pressurizing shaft 17. Piping 19, carrier plate 11
The silicon wafer 21 is attracted to the lower surface 11a of the carrier plate 11 by vacuum suction through the insertion hole 20 of the pressurizing shaft 17, and the air is passed through the pressurizing shaft 17 F! By connecting a vacuum suction source to @18 and applying vacuum suction, the carrier plate 1
1 and metal bellows 15 in the direction of the pressure shaft 17,
With the load on the carrier plate 11 and metal bellows 15 being approximately O, the pressure shaft 17 is brought close to the surface plate 10 at high speed. In this case, since the loads on the carrier plate 11 and the metal bellows 15 are offset by the suction force of the vacuum suction, the silicon wafer 21 adsorbed on the lower surface 11H of the carrier plate 11 is not subjected to impact on the surface plate 10. (Smooth contact occurs, and no problems such as chipping of the silicon wafer 21 occur.
次いて、定盤１０と加圧軸１７とを、それぞれ各回転軸
線（１，、Ｑ、を中心にして同一方向に強制回転サセ、
滑かに設定回転数まで上昇させる。この場合にも、キャ
リアプレー）１１及び金属へローズ１５の荷重かほぼＯ
とされているから、強制駆動時に７リコンウエーハ２１
か割れることかない。Next, the surface plate 10 and the pressure shaft 17 are forcibly rotated in the same direction around each rotation axis (1, Q,
Smoothly increase the rotation speed to the set speed. In this case as well, the load of the carrier play) 11 and the metal rose 15 is approximately O
Therefore, when forced driving, 7 recon wafers 21
It will never break.
そして、加圧軸１７のエア通路１８に加圧気体源を連結
して、金属ベローズ１５．連結プレート１４及びキャリ
アプレート１１とて構成される空間内に加圧気体を供給
して、キャリアプレート１１を定盤１０９１１１に押し
付けると共に、スラリーを定盤１０ ノ研磨面１０ ａ
に供給してメカノケミカル研磨を行う。この場合、キャ
リアプレート１】は、そのランアル荷重をガイド部材１
２によって支持され、かつ上下動可能にかつ水平面に対
して若干傾斜可能に設けられているから、定盤１ｏの研
磨面１０ａに追従して動き回転することができる。Then, a pressurized gas source is connected to the air passage 18 of the pressurizing shaft 17, and the metal bellows 15. Pressurized gas is supplied into the space constituted by the connection plate 14 and the carrier plate 11 to press the carrier plate 11 against the surface plate 109111, and to apply slurry to the polishing surface 10a of the surface plate 10.
is supplied to perform mechanochemical polishing. In this case, the carrier plate 1] transfers the runal load to the guide member 1.
2 and is provided so as to be movable up and down and slightly tilted with respect to the horizontal plane, so that it can move and rotate following the polishing surface 10a of the surface plate 1o.
従って、キャリアプレート１１に吸着されたシリコンウ
ェーハ２１は定盤１ｏの研磨面１０ａに密着して良好に
研磨される。Therefore, the silicon wafer 21 adsorbed to the carrier plate 11 comes into close contact with the polishing surface 10a of the surface plate 1o and is polished well.
また、上記研磨中においては、ステ１ノー及び定盤１０
は、所定温度に加温されており、この熱がシリコンウェ
ーハ２１及びキャリアプレート１１に伝わるが、上記キ
ャリアプレート１１の側方は、ガイド部材１２．１３に
よって保温され、かつキャリアフレート１１の上方は、
金属へローズ１５内の空間により断熱されているため、
連結プレート１４及び金属へローズ１５を介して放熱す
るのみであり、従って、迅速にかつ確実にキャリアプレ
ート１１の上下面は同−ｉ１ｔに保持できて、手中リア
プレート１１か熱歪みにより変形することがなく、シリ
コンウェーハ２１が高精度に支持される。Also, during the above polishing, the step 1 no and the surface plate 10
is heated to a predetermined temperature, and this heat is transmitted to the silicon wafer 21 and the carrier plate 11, but the sides of the carrier plate 11 are kept warm by the guide members 12, 13, and the upper part of the carrier plate 11 is ,
Because it is insulated by the space inside the metal rosette 15,
Heat is only radiated through the connecting plate 14 and the metal rose 15, so the upper and lower surfaces of the carrier plate 11 can be held at the same level quickly and reliably, and the rear plate 11 in the hand can be prevented from deforming due to thermal distortion. The silicon wafer 21 is supported with high precision.
続いて、研磨最終工程（仕上げ工程）においては、今ま
で加圧軸１７のエア通路１８を介して供給していた加圧
気体の量をほぼＯとすることにより、キャリアプレート
１１側の加圧力を軽減して、シリコンウェーハ２Ｉに極
めて良好な鏡面を形成することができる。Subsequently, in the final polishing process (finishing process), the amount of pressurized gas that has been supplied through the air passage 18 of the pressurizing shaft 17 is set to approximately O, thereby increasing the pressurizing force on the carrier plate 11 side. With this reduction, an extremely good mirror surface can be formed on the silicon wafer 2I.
以上説明したように、本発明の研磨装置は、下面に被研
磨材が固定されたキャリアプレートを、上面が研磨面と
なっている定盤に、押圧した状態で上記キャリアプレー
ト及び定盤を同一方向に回転させて、上記被研磨材の表
面と上記定盤の研磨面との間に相対運動を与えつつ上記
定盤の研磨面に研磨液を供給して、被研磨材表面を研磨
する研磨装置において、上記キャリアプレートの上面に
ベローズを配置し、かつ上記キャリアプレートの側面に
、研磨時のラジアル負荷を保持するガイドを設けたもの
であるから、キャリアプレートが、上記ガイドによって
保諷され、かつ上記ベローズの構成する空間によって断
熱されることにより、キャリアプレートの上下面におけ
る温度差を小さく抑制できて、熱歪みを軽減することが
でき、従って、被研磨材をより高精度に支持することが
できる上に、ガイドによって、キャリアプレートにかか
るラジアル荷重を低く保持することにより、研磨ユニッ
ト全体の傾きもなく、定盤に対して被研磨材か浮上しに
くくて、キャリアプレートかカイトによって保持されな
から上下方向に円滑に昇降することかでき、かつベロー
ズによって下方に加圧されることによって、被研磨材か
定盤に円滑に密着するため、被研磨材の研磨精度か、剛
体あるいは半剛体の定盤の場合、著しく良好になると共
に、被研磨材を定盤に接触する際に、上記へローズ内を
吸引することにより、ベローズ及びキャリアプレートの
荷重をほぼＯとした状態で、キャリアプレートに吸着し
た被研磨材を定盤に円滑に接触でき、従って、被研磨材
に欠けが生しることを防止でき、しかも仕上げ研磨時に
は、キャリアプレート側の加圧をほぼＯとした状態で保
持てきるため、極めて良好な鏡面仕上げを行うことがで
きる。これにより、研磨時の加圧力及び回転速度研磨温
度を上昇させることができ、研磨効率を同上させること
ができる。As explained above, in the polishing apparatus of the present invention, the carrier plate and the surface plate are held in a state in which the carrier plate, on which the material to be polished is fixed on the lower surface, is pressed against the surface plate whose upper surface is the polishing surface. Polishing the surface of the material to be polished by supplying a polishing liquid to the polishing surface of the surface plate while rotating the surface of the material to be polished in a direction to provide relative motion between the surface of the material to be polished and the polishing surface of the surface plate. In the apparatus, a bellows is arranged on the upper surface of the carrier plate, and a guide is provided on the side surface of the carrier plate to hold the radial load during polishing, so that the carrier plate is protected by the guide, In addition, by being insulated by the space formed by the bellows, the temperature difference between the upper and lower surfaces of the carrier plate can be suppressed to a small extent, and thermal distortion can be reduced, thereby supporting the material to be polished with higher precision. In addition, by keeping the radial load on the carrier plate low with the guide, there is no tilting of the entire polishing unit, and the material to be polished is difficult to float relative to the surface plate, and is held by the carrier plate or kite. Because of this, it can move up and down smoothly in the vertical direction, and because it is pressurized downward by the bellows, it comes into close contact with the material to be polished and the surface plate. In the case of the surface plate, the condition is significantly improved, and when the material to be polished is brought into contact with the surface plate, the inside of the bellows is suctioned, and the carrier plate The material to be polished can be brought into smooth contact with the surface plate, thereby preventing chipping of the material to be polished, and during final polishing, the pressure on the carrier plate side is maintained at approximately O. Because of this, an extremely good mirror finish can be achieved. Thereby, it is possible to increase the pressing force and the rotational speed during polishing and the polishing temperature, thereby increasing the polishing efficiency.
第１図は本発明の一実施例を示す断面図、第２図は従来
の研磨装置の一例を示す断面図、第３図は従来の研磨装
置の他の一例を示す断面図である。
第２図
０・・定盤、１トキャリアプレート、１２ ガド部材、
１５・金属へローズ、２１ ンリコンエーハ（被研磨材
）、１０ａ 上面（研磨面）、１ａ ・下面。FIG. 1 is a sectional view showing an embodiment of the present invention, FIG. 2 is a sectional view showing an example of a conventional polishing apparatus, and FIG. 3 is a sectional view showing another example of a conventional polishing apparatus. Fig. 2 0: surface plate, 1 carrier plate, 12 guide member,
15.Metal alloy, 21. Recon fer (material to be polished), 10a upper surface (polishing surface), 1a.lower surface.
Claims (1)
面が研磨面となっている定盤に、押圧した状態で上記キ
ャリアプレート及び定盤を同一方向に回転させて、上記
被研磨材の表面と上記定盤の研磨面との間に相対運動を
与えつつ上記定盤の研磨面に研磨液を供給して、被研磨
材表面を研磨する研磨装置において、上記キャリアプレ
ートの上面にベローズを配置し、かつ上記キャリアプレ
ートの側面に、研磨時のラジアル負荷を保持するガイド
を設けたことを特徴とする研磨装置。A carrier plate, on which the material to be polished is fixed on the lower surface, is pressed against a surface plate whose upper surface is a polishing surface, and the carrier plate and the surface plate are rotated in the same direction, so that the surface of the material to be polished and the surface of the material to be polished are pressed. In a polishing device that polishes the surface of a workpiece by supplying a polishing liquid to the polishing surface of the surface plate while applying relative motion to the polishing surface of the surface plate, a bellows is disposed on the upper surface of the carrier plate. , and a polishing apparatus characterized in that a guide is provided on a side surface of the carrier plate to hold a radial load during polishing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2114543A JPH0413567A (en) | 1990-04-27 | 1990-04-27 | Polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2114543A JPH0413567A (en) | 1990-04-27 | 1990-04-27 | Polishing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0413567A true JPH0413567A (en) | 1992-01-17 |
Family
ID=14640408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2114543A Pending JPH0413567A (en) | 1990-04-27 | 1990-04-27 | Polishing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0413567A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5441444A (en) * | 1992-10-12 | 1995-08-15 | Fujikoshi Kikai Kogyo Kabushiki Kaisha | Polishing machine |
| US5851140A (en) * | 1997-02-13 | 1998-12-22 | Integrated Process Equipment Corp. | Semiconductor wafer polishing apparatus with a flexible carrier plate |
| US6422928B1 (en) | 1999-02-17 | 2002-07-23 | Fujikoshi Kikai Kogyo Kabushiki Kaisha | Abrasive machine |
| US6695687B2 (en) * | 2001-05-25 | 2004-02-24 | Infineon Technologies Ag | Semiconductor substrate holder for chemical-mechanical polishing containing a movable plate |
| JP2014108511A (en) * | 2012-12-04 | 2014-06-12 | Fujikoshi Mach Corp | Wafer polishing head and wafer polishing device |
-
1990
- 1990-04-27 JP JP2114543A patent/JPH0413567A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5441444A (en) * | 1992-10-12 | 1995-08-15 | Fujikoshi Kikai Kogyo Kabushiki Kaisha | Polishing machine |
| US5851140A (en) * | 1997-02-13 | 1998-12-22 | Integrated Process Equipment Corp. | Semiconductor wafer polishing apparatus with a flexible carrier plate |
| US6422928B1 (en) | 1999-02-17 | 2002-07-23 | Fujikoshi Kikai Kogyo Kabushiki Kaisha | Abrasive machine |
| US6695687B2 (en) * | 2001-05-25 | 2004-02-24 | Infineon Technologies Ag | Semiconductor substrate holder for chemical-mechanical polishing containing a movable plate |
| JP2014108511A (en) * | 2012-12-04 | 2014-06-12 | Fujikoshi Mach Corp | Wafer polishing head and wafer polishing device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100488301B1 (en) | Apparatus and method for polishing a flat surface using a belted polishing pad | |
| US6261958B1 (en) | Method for performing chemical-mechanical polishing | |
| EP0953409B1 (en) | Wafer surface machining method and apparatus | |
| US6168506B1 (en) | Apparatus for polishing using improved plate supports | |
| JPH077755B2 (en) | Wafer polishing method | |
| US6213855B1 (en) | Self-powered carrier for polishing or planarizing wafers | |
| US5980366A (en) | Methods and apparatus for polishing using an improved plate stabilizer | |
| EP0860238B1 (en) | Polishing apparatus | |
| JP2011009747A (en) | Method of manufacturing semiconductor wafer | |
| KR20020018186A (en) | Wafer polishing method and wafer polishing device | |
| US6296550B1 (en) | Scalable multi-pad design for improved CMP process | |
| JPH0413567A (en) | Polishing device | |
| KR20100088143A (en) | Polishing head, polishing apparatus and work removing method | |
| US6273794B1 (en) | Apparatus and method for grinding a semiconductor wafer surface | |
| US6913516B1 (en) | Dummy process and polishing-pad conditioning process for chemical mechanical polishing apparatus | |
| US7025854B2 (en) | Method and apparatus for aligning and setting the axis of rotation of spindles of a multi-body system | |
| JPH1126404A (en) | Polishing apparatus | |
| JPH09246218A (en) | Polishing method/device | |
| JP3575944B2 (en) | Polishing method, polishing apparatus, and method of manufacturing semiconductor integrated circuit device | |
| JP2011025338A (en) | Plate-like object fixing method | |
| JPH11333677A (en) | Polishing device for substrate | |
| JP2612012B2 (en) | Polishing equipment | |
| JP4907298B2 (en) | Polishing head, polishing apparatus, and workpiece peeling method | |
| JPH1094958A (en) | Substrate polishing method and polishing device used therefor | |
| JP2002254305A (en) | Polishing head |