JPH04133238A - Electron beam emitting device and image display/recorder using it - Google Patents

Abstract

PURPOSE:To simplify fabricating processes, give a sufficient amount of electron emission, and eliminate variation or unevenness in modulation by laminating electron emitting elements and modulation electrode one over another with an insulative base body interposed, and designing so that, the thickness of these elements or the distance from electrode to the electron emitting part lies within a certain range. CONSTITUTION:In an electron beam generating device, electron emitting elements 2, 3 as source of electron beam and a modulation electrode 4, which modulates electron beam emitted by these elements 2, 3, are laminated one over another with insulative base body 1 interposed, wherein the thickness T of the elements 2, 3 or the distance from electrode 4 to the electron emitting part 3 of the elements 2, 3 lies within the range 0.01-200mum. This facilitates alignment of the electrode 4 with element 2, 3, simplifies fabrication, and gives a sufficient amount of electron emission compared with conventional arrangement. Further, this improves remarkably the modulational unevenness between a plurality of electron beams or undeliberate variation of the amount of electron emission at the time of driving, and also provides an excellent modulation efficiency.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electron beam generating device that emits an electron beam in response to an information signal, and an image display device and a recording device using the electron beam generating device.

[Conventional technology]

Conventionally, image forming members (e.g., phosphors, resist materials, etc.) that form images by irradiating a plurality of electron-emitting devices spread out in a planar shape with electron beams emitted from the electron-emitting devices (for example, phosphors, resist materials, etc.) There is a thin image display device in which a member that emits light, changes color, is charged, changes in quality, etc. is placed opposite each other. As an example of such an image display device, FIGS. 11 and 12 show schematic configuration diagrams of a conventional electron beam display device.

First, FIG. 11 shows an electron beam display device having a configuration in which a modulation electrode is arranged between an electron-emitting device and an image forming member that are opposed to each other. In detail, 71 is a rear plate, 72 is a support body, 73 is a wiring electrode, 74 is an electron emission part, 75 is an electron passing hole, 76 is a modulation electrode, 77 is a glass plate, 78 is a transparent electrode, 79 is a fluorescent substance (image forming member), 8
0 is a face spread, and 81 is a bright spot of the phosphor. Electron-emitting section 7 of the electron-emitting device (composed of 72, 73, and 74)
4 is formed by thin film technology and has a hollow structure that does not come into contact with the rear plate 71. Further, the modulation electrode 76 is disposed in a space above the electron emission section 74 (in the electron emission direction), and therefore has a passage hole 75 for the emitted electron beam.

This electron beam display device emits thermoelectrons by applying a voltage to a wiring electrode 73 and heating an electron emitting part 74 having a hollow structure, and applies a voltage to a modulating electrode 76 that modulates the electron flow according to an information signal. By applying , electrons are taken out from the passage hole 75, the taken out electrons are accelerated, and are caused to collide with the phosphor 79. Further, an XY matrix is formed by the wiring electrode 73 and the modulation electrode 76, and an image is displayed on a phosphor 79 which is an image forming member.

In FIG. 12, 91 is a substrate, 92 is a modulation electrode,
93 is a thermionic beam source (electron emitting device); 94 is an upper deflection electrode; 95 is a lower deflection electrode; 96 is a face plate provided with a bright electrode and a phosphor (image forming member);
This is an electron beam display device having a structure in which a modulation electrode 92, an electron-emitting device 93, and an image forming member are sequentially arranged on the top of the modulation electrode 9.
2 and the electron emitting material 93L are arranged with a space between them. ) ξ, the thermal beam source is a tungsten wire coated with an electron emitting material (,7), and the outer diameter is approximately 3571 m.
The operation 21 degrees emits thermoelectrons to 700 -R501-,,:.

[Problem that the invention is trying to solve]

However, the conventional image display device described above has the following problems. In other words, ■ In Figure 1 CI, since the modulation electrode is placed in the space above the electron-emitting device (in the electron-emitting direction), it is difficult to align the electron-passing hole of the modulation electrode with the electron-emitting part, and as a result, , a sufficient amount of electron emission from the electron beam cannot be obtained.

■ In Figures 11 and 12, since there is a gap between the modulating electrode and the electron-emitting element that face each other, 1) it is difficult to maintain a constant distance between the modulating electrode and the electron-emitting part, resulting in Variations in distance (variations due to impact, thermal strain during driving, etc.) cause unintended variations in the amount of electrons emitted from the electron beam.

2) It is difficult to make the distances between all the modulation electrodes and the electron emission parts the same, and as a result, the difference in distance causes uneven modulation between electron beams emitted from different electron emission parts.

Furthermore, the above-mentioned problems cause problems such as insufficient contrast and uneven brightness of displayed images in image display devices (see 5).

Therefore, the present invention is an invention in which the above-mentioned problems are considered (1), and the purpose is to easily align the modulation electrode and the electron-emitting element, and (C') generate electron beams that are easy to manufacture. Equipment
It is also an object of the present invention to provide an image game, a display device, and a recording device using the same.A further object of the present invention is to obtain a sufficient amount of electron emission, and to prevent unintended fluctuations in the amount of electron emission and electron beams. It is an object of the present invention to provide an electron beam generating device with less modulation unevenness between the two and a high modulation efficiency, and an image display device and a recording device using the same. An object of the present invention is to provide an image display device with no unevenness in brightness and a recording device with excellent contrast of recorded images and capable of obtaining clear images.

[Means to solve problems]

The above object is achieved by the present invention as described below.

That is, the present invention provides an electron beam generating device having an electron-emitting element and a modulation electrode that modulates an electron beam emitted from the electron-emitting element according to an information signal, in which the electron-emitting element and the modulation electrode are insulated. are laminated with a sexual substrate in between,
An electron beam generating device characterized in that the thickness of the electron-emitting device is 0.01 μm to 200 μm, an electron-emitting device, and modulation for modulating an electron beam emitted from the electron-emitting device according to an information signal. In the electron beam generating device having an electrode, the electron-emitting element and the modulating electrode are laminated with an insulating substrate interposed therebetween, and the distance from the modulating electrode to the electron-emitting part of the electron-emitting element is 0.01 μm or more. This is an electron beam generator characterized by having a diameter of 200 μm.

Furthermore, the present invention provides an image display comprising an electron-emitting device, a modulation electrode that modulates an electron beam emitted from the electron-emitting device according to an information signal, and an image forming member that forms an image by irradiating the electron beam. In the apparatus, the modulating electrode;
The electron-emitting device and the image forming member are sequentially arranged, the electron-emitting device and the modulation electrode are laminated with an insulating substrate interposed therebetween, and the electron-emitting device has a thickness of 0.01 μm to 20 μm.
0 μm; an electron-emitting device; a modulation electrode that modulates an electron beam emitted from the electron-emitting device according to an information signal; and forming an image by irradiation with the electron beam. In an image display device having an image forming member, the modulating electrode, the electron emitting device, and the image forming member are sequentially arranged, and the electron emitting device and the modulating electrode are laminated with an insulating substrate interposed therebetween, The distance from the modulation electrode to the electron-emitting part of the electron-emitting device is 0.0.
The image display device is characterized in that the thickness is 1 μm to 200 μm.

Furthermore, the present invention provides an electron-emitting device, a modulation electrode that modulates an electron beam emitted from the electron-emitting device according to an information signal, a light-emitting body that emits light when irradiated with the electron beam, and light emitted from the light-emitting body. In a recording device having a recording medium on which an image is recorded by irradiation of A recording device characterized in that the electron-emitting device is laminated with the electron-emitting device having a thickness of 0.01 μm to 200 μm, and an electron-emitting device, and an electron beam emitted from the electron-emitting device is modulated according to an information signal. A recording device comprising a modulating electrode that emits light, a light emitting body that emits light when irradiated with the electron beam, and a recording medium that records an image by being irradiated with light from the light emitter. light-emitting bodies are arranged in sequence, the electron-emitting device and the modulation electrode are laminated with an insulating substrate interposed therebetween;
A recording device characterized in that the distance from the modulation electrode to the electron emitting part of the electron emitting device is 0.01 μm to 200 μm; A recording device comprising a modulation electrode that modulates according to the electron beam, a light emitting body that emits light when irradiated with the electron beam, and a means for supporting a recording object whose image is recorded by the irradiation of light from the light emitting body. , the electron-emitting device and the light-emitting body are arranged in sequence, the electron-emitting device and the modulation electrode are laminated with an insulating substrate interposed therebetween,
A recording device characterized in that the thickness of the electron-emitting device is 0.01 μm to 200 μm, an electron-emitting device, and a modulation electrode that modulates an electron beam emitted from the electron-emitting device according to an information signal. , a recording device comprising a light-emitting body that emits light when irradiated with the electron beam, and a support means for a recording medium whose image is recorded by irradiation with light from the light-emitting body, the modulation electrode, the electron-emitting element, the light-emitting The electron-emitting device and the modulating electrode are stacked with an insulating substrate interposed therebetween, and the distance from the modulating electrode to the electron-emitting portion of the electron-emitting device is 0.01 μm to 200 μm. This is a recording device characterized by the following.

The present invention will be explained in detail below.

The main feature of the present invention is that the electron beam generator has the following two constituent requirements (1) and (2). That is, (1) an electron-emitting device that is an electron beam generation source and a modulation electrode that modulates the electron beam emitted from the electron-emitting device are laminated with an insulating substrate interposed therebetween; and (2) The thickness of the electron-emitting device or the distance from the modulation electrode to the electron-emitting part of the electron-emitting device is 0601 μm to 2
It is in the range of 00 μm.

First, to explain the requirement (1) above, an insulating substrate can hold an electron-emitting device and a modulating electrode on its surface in an electrically insulated state, and its shape, constituent material, etc. , but is not particularly limited. However, it is preferable that the insulating substrate has a uniform thickness, and such uniformity makes it possible to maintain a constant distance between the electron-emitting element and the modulation electrode. Here, the uniform thickness may be the level of uniformity that can be achieved using current film formation technology (for example, film formation technology as in the embodiments described below). The thickness of the insulating substrate is not particularly limited as long as it can maintain electrical insulation between the electron-emitting device and the modulation electrode, but is preferably 0.0
1 μm to 200 μm, particularly preferably 0.1 μm
~10 μm.

Furthermore, when a voltage corresponding to the information signal is applied to the modulation electrode, the electron beam emitted from the electron-emitting element is 0N1
It is an electrode for performing 0FF control and further analog control of the electron emission amount of the electron beam, and may be made of any conductive material.

Next, to explain the requirement (2) above, the electron-emitting device of the present invention has a thickness of 0.01 μm to
The element is in the range of 200 μm, or the distance from the modulation electrode to the electron emitting part of the electron emitting device is 0.01 μm to 2
This element is in the range of 00 μm. As long as the electron-emitting device satisfies the above conditions, it may be either a hot cathode or a cold cathode. Here, the thickness of an electron-emitting device in the present invention means the distance (vertical distance) from the insulating substrate surface to the top end of the electron-emitting device, regardless of the device form. Furthermore, the distance from the modulating electrode to the electron emitting part of the electron emitting device in the present invention refers to the shortest distance from the adjacent surface between the modulating electrode and the insulating substrate, regardless of the form of the electron emitting part. means the distance to the Furthermore, it is particularly preferable that the thickness or distance is 0.001 μm to 10 μm in order to further improve the modulation efficiency of the emitted electron beam.

The above requirements (1) and (2) are essential for the present invention, and the electron beam generating device of the present invention that has these requirements is capable of obtaining a sufficient amount of electron emission and unintended fluctuations in the amount of electron emission. There is little modulation unevenness between electron beams and electron beams, and therefore a display image with excellent contrast and no brightness unevenness is provided. That is, in the present invention, first, by adopting the arrangement of the electron-emitting device and the modulation electrode as described in (1) above,
This makes it possible to simultaneously solve the problem of alignment between the electron passing hole and the electron emitting part of the conventional modulating electrode, and the problem of variations and irregularities in the distance between the modulating electrode and the electron emitting part. Also, it is better if the modulation electrode is originally placed within the emission path of the electron beam.
Desirable in terms of modulation efficiency. In the present invention, the above (1)
), and by using the electron-emitting device of (2) above, it was possible to obtain an electron beam generating device that was further improved in terms of electron beam modulation efficiency.

Next, the electron-emitting device according to the present invention will be explained in more detail.

As mentioned above, the electron-emitting device in the present invention is as described above (2).
) Any electron-emitting device, generally called a hot cathode or a cold cathode, may be used as long as it satisfies the conditions of Because the electron emission efficiency and response speed are lower than
Preferably, a cold cathode such as a surface conduction type emission device or a semiconductor electron emission device, which will be described later, is used. In particular, among cold cathodes, it is better to use an electron-emitting device called a surface conduction-type emitting device because 1) - a higher electron emission efficiency can be obtained; 2) the structure is simple, so it is easier to manufacture; 3) ) It is particularly preferable because it has the following advantages: a large number of elements can be arrayed at high density on the same substrate; 4) response speed is fast; and 5) brightness contrast is even better. Here, the surface conduction type emitter is, for example, manufactured by MI Ellingson (M, 1.EIi
cold cathode device [radio/
Engineering Electron Physics (Ra
dio Eng, E]ectron.

Rhys, ) Volume 10, pp. 1290-1296, 1
965], which is a method in which a voltage is applied between a small area of a thin film (electron emission region) formed between electrodes (device electrodes) provided on the substrate surface, and the thin film surface is This is a device that emits electrons by passing a current parallel to the 5nO2 (Sb) thin film developed by Ellingson et al., as well as the device that uses an Au thin film. (G.Ditt
mer: “Th1n 5olid Films”)
, vol. 9, p. 317, (1972)], by ITO thin film [M. Hartwell and C.G.
E-day con 7'' (M, Hartw
e 11 a n d C, G, Fonstad: “
IEEE Trans,ED Conf,”)51
9, (1975) by carbon thin film [Hisashi Araki et al.: "Vacuum", Vol. 26, No. 1, p. 22.

(1983)] etc. have been reported.

In addition to the above, the surface conduction type emitting device used in the present invention may have an electron emitting portion formed by dispersing fine metal particles, as will be described later. In a preferred form of the surface conduction type emission device, the sheet resistance of the thin film (electron emitting portion) is 103Ω/portion to 10′Ω/portion, and the electrode spacing is 0.01 μm to 100 μm.

Further, in the present invention, voltage application means for applying voltages to the electron-emitting device and the modulation electrode are provided separately and independently, and each of the voltage application means is also provided with an applied voltage variable means.

Further, in the present invention, although it depends on the application, preferably the electron-emitting device is a line-electron-emitting device having a plurality of line-shaped electron-emitting portions, and the plurality of line-electron-emitting devices and the modulation electrode are preferably A plurality of these constitutes an XY matrix. As described above, in a multi-electron beam generator having a large number of electron-emitting parts, the above-mentioned (1)
) and (2) are preferable in order to prevent unevenness in the amount of electron emission and uneven modulation among the electron beams.

The electron beam generating device has been described in detail above as the basis of the present invention, and such an electron beam generating device is particularly suitably used as an electron source for an image display device and a recording device.

FIG. 3 shows an example of an embodiment of an image display device using the electron beam generator of the present invention.

FIG. 3 shows the structure of the display panel, and in the figure, numeral 17 is a glass vacuum container, which is a part thereof. Reference numeral 11 indicates a face plate on the display surface side. A transparent electrode made of, for example, ITO is formed on the inner surface of the face plate 11, and red, green, and blue phosphors (
The image forming member) is painted in a mosaic pattern, and is subjected to a metal back treatment known in the CRT field. (The transparent electrode, phosphor, and metal back are not shown.) Furthermore, the transparent electrode is electrically connected to the outside of the vacuum vessel through a terminal 13 in order to apply an accelerating voltage.

Further, an electron beam generator of the present invention is fixed to the bottom surface of the vacuum container 17. l is a glass substrate (insulating base)
On the upper surface thereof, N electron-emitting devices are arranged in X1 rows. The electron-emitting device groups are electrically connected in parallel in each column, and the positive electrode side wiring 14 (negative electrode side wiring 15) of each column has terminals 1 to D, (terminals 1 to D, ,
) is electrically connected to the outside of the vacuum vessel.

Further, a grid electrode (modulation electrode) is provided on the back surface of the substrate through the substrate. N such grid electrodes (modulation electrodes) 4 are provided perpendicularly to the element array, and each grid electrode (modulation electrode) 4 is electrically connected to the outside of the vacuum vessel through a terminal 16 (G, -GN). connected.

This display panel uses one electron-emitting device row (line electron-emitting device) and N grid electrode (modulation electrode) rows.
An XY matrix is constructed. By sequentially driving (scanning) the electron-emitting device arrays one by one and simultaneously applying modulation signals for one line of the image to the grid electrode (modulation electrode) according to the information signal, the fluorescence of each electron beam is It controls the irradiation to the body and displays the image line by line.

The above-mentioned image display device is an image display device that can obtain display images with high resolution, uniform brightness, high brightness, and high contrast due to the advantages of the electron beam generator of the present invention described above. becomes.

Next, FIG. 8 shows an example of an embodiment of a recording apparatus using the electron beam generator of the present invention.

Figure 8 shows the schematic structure of an optical printer, and in the figure,
Reference numeral 47 indicates a glass vacuum container, and 41, which is a part of the vacuum container, indicates a face plate from which a light beam is emitted toward the recording medium 45. A transparent electrode made of ITO, for example, is formed on the inner surface of the face plate 4], and a phosphor (light emitting material) is disposed inside the transparent electrode.
A well-known metal back treatment is applied in the field. (
Transparent electrodes, phosphors, and metal backs are not shown. )Also,
The transparent electrode is electrically connected to the outside of the vacuum container through a terminal 43 in order to apply an accelerating voltage.

Further, the electron beam generating device of the present invention described above is fixed to the bottom surface of the vacuum container 47. 1 is a glass substrate (insulating base), on the top surface of which electron-emitting devices are arranged in a row. The positive electrode side wiring (negative electrode side wiring) 44 of the electron-emitting device group is electrically connected to the outside of the vacuum container through terminals D P ND, rl.

Further, grid electrodes (modulation electrodes) are laminated with the substrate 1 interposed therebetween. N such grid electrodes (modulation electrodes) 4 are provided perpendicularly to the element array, and each grid electrode (modulation electrode) 4 is connected to a terminal 46 (G 1 to GN
) is electrically connected to the outside of the vacuum vessel.

In this optical printer, the phosphor of each electron beam is The irradiation to the (light emitter) is controlled to form a light emission pattern for 1542 images. The light beam emitted from the light emitting body according to the light emitting pattern is irradiated onto the recording medium, and when the recording medium is a photosensitive material, a photosensitive pattern is formed, and when the recording medium is a heat sensitive material, a photosensitive pattern is formed. A heat-sensitive pattern is formed on the surface of the recording medium. The above operation is repeated sequentially for all image lines while scanning the recording medium or the light emitting source 51 (FIG. 8, 48) line by line, as shown in FIGS. 9(a) and 9(b). An image is recorded on the surface of the recording medium.The recording medium is as shown in FIG.
As shown in a) and (b), it may be a photosensitive (thermosensitive) sheet 54 (in this case, the recording device has a support (for example, a drum 52, a conveyance roller 53) for supporting the sheet. Further, the recording medium may be a photosensitive drum 64 as shown in FIG.

To explain the apparatus shown in FIG. 10, the drum-shaped recording medium 64
In addition to the light emitting source 61, a developing device 65, a static eliminator 66, a cleaner 67, and a charger 68 are provided in this order along the rotational direction.

First, the recording medium 64 is charged by the charger 68 .

Next, an image is displayed by the light emitted from the light source 61, and the light of this image is irradiated onto the recording medium 64, thereby exposing the recording medium 64 to light. The photosensitive portion of the recording medium 64 is neutralized, and the non-exposed portion attracts toner supplied from the developing device 65.

The toner-adsorbed portion moves as the recording medium 64 rotates, and when the static eliminator 66 releases the charge, the adsorbed toner falls. At this time, a paper 69 on which an image is to be formed is located between the recording medium 64 and the static eliminator 66, and the toner is dropped onto this paper 69.

The paper 69 that has received the toner moves to a fixing device (not shown), where the toner is fixed on the paper 69,
The image represented by the light emitting source 61 is reproduced and recorded on the paper 69.

On the other hand, the drum-shaped recording medium 64 further rotates and moves to a cleaner 67, where the remaining toner is removed, and is further charged by a charger 68.

Due to the advantages of the electron beam generating device of the present invention described above, the recording device described above has particularly high resolution, high speed, no exposure unevenness, and can obtain clear recorded images with high contrast.

Hereinafter, the present invention will be explained in further detail using Examples.

Embodiment 1 FIG. 1 is a diagram showing a first embodiment of the apparatus of the present invention. 8
4 is a rear plate, 4 is a modulation electrode, 1 is an insulating substrate, 5 is an element wiring electrode, 2 is an element electrode, and 3 is an electron emission part.

In this embodiment, the modulation electrode between the conventional electron-emitting device and the phosphor shown in FIG. and a modulation electrode 4 are laminated with an insulating substrate 1 interposed therebetween.

Figure 2 is a sectional view taken along line A-A' in Figure 1, and Figure 4 is a cross-sectional view taken along line A-A' in Figure 1.
A' shows the manufacturing process of the electron beam generator of this example in cross section. Here, a method for manufacturing the image display device of this example will be explained.

(1) First, the rear plate 8 is thoroughly cleaned, and four groups of line-shaped modulation electrodes are formed using commonly used vapor deposition and photolithography techniques (FIG. 4A). The rear plate 8 may be made of an insulator such as glass or alumina ceramics. Further, the modulation electrode 4 may be made of any conductive material such as gold, nickel, or tungsten, but it is preferably made of a material whose coefficient of thermal expansion is as close as possible to that of the substrate.

The modulation electrode in this example is made of nickel material and has a width of 1.6
A modulation electrode group with a pitch of 2 mm was fabricated.

(2) Next, an insulating substrate 1 was formed of SiO□ using a vapor deposition technique (FIG. 4B). The material of the insulating substrate 1 is Si.
O□, glass, and other ceramic materials are suitable.

Further, the thickness thereof was set to 10 μm in this embodiment.

(2) Next, element electrodes 2 and element wiring electrodes 5 (not shown in the sectional view) were made of Ni material by vapor deposition and etching techniques (FIG. 4C). However, the thickness of the element electrode 2 is OJμn
It was set to 1. The element wiring electrode 5 may be made of any material as long as it is made to have sufficiently low electrical resistance. The element electrode 2 is connected to the element wiring electrodes 5-a and 5-b.
The device electrodes 2 are connected to each other to form an electron emitting section 3 facing each other. The electrode gap (G) is 0.1 μm to 10
It is preferable to have a thickness of 2 μm in this example. The length corresponding to the electron emission part 3 (I!: see Figure 1) is 300 μm.
was formed. It is desirable that the width of the element electrode 2 be narrow, but in reality it is preferably 18 m to 100 μm, more preferably 1 μm to 1 μm.
0 μm is optimal. Further, the electron emitting section 3 has a modulation electrode 4
It is made near the center of the width. 5 groups of element wiring electrodes (a,
The pitch of the pair (b) was 2 mm, and the pitch of the electron emitting portions 3 was 2 mm.

(2) Next, an electron emitting region 3 was formed by providing an ultrafine particle film between opposing electrodes using a gas deposition method (FIG. 4D). Although Pd was used as the material for the ultrafine particles, other materials include metal materials such as Ag+Au and SnO2.
, In 203 oxide materials are preferred, but are not limited thereto. In this example, the diameter of the Pd particles was set to about 5 OA, but the diameter is not limited to this.

In addition to the gas deposition method, desired characteristics can also be obtained by forming an ultrafine particle film between the electrodes, for example, by dispersing and coating an organic metal and then heat-treating it. In this example, the distance between the electron beam emitting part and the modulation electrode of the electron-emitting device is 10 μm, and the thickness of the electron-emitting device is 0.4 μm.
It was μm.

A face plate having a phosphor (image forming member) was placed 5 mm apart from a rear plate of an electron beam generator formed by the above-described process, and an image display device shown in FIG. 3 was manufactured.

Next, the driving method of this embodiment will be explained.

The voltage on the phosphor surface is set to 0.8 kV to 1.5 kV.

In FIG. 1, a voltage pulse of 14 V is applied to a pair of device wiring electrodes 5-a and 5-b to cause electrons to be emitted from a plurality of linearly arranged electron-emitting devices. The emitted electrons control the electron beam in a 0N10FF manner by applying a voltage to the modulation electrode group in response to the information signal. The electrons extracted by the modulation electrode 4 are accelerated and collide with the phosphor. The phosphor displays one line according to the information signal. Next, a voltage pulse of 14 V is applied to the adjacent element wiring electrodes 5-a, 5-b to display one line as described above. By performing this sequentially, one screen image was formed. In other words, the device wiring electrode group is used as a scan electrode, and the scan electrode and modulation electrode
A Y matrix was formed and an image was displayed.

Since the surface conduction electron-emitting device of this example can be driven in response to a voltage pulse of 100 picoseconds or less, one screen can be
If an image is displayed in one-tenth of a second, more than 10,000 scanning lines can be formed.

Furthermore, the voltage applied to the four groups of modulation electrodes was such that the electron beam was turned off at −40 V or lower, and turned on at 30 V or higher. Further, the amount of electron beam changed continuously between -40V and 30V. Therefore, gradation display was possible by applying the voltage to the modulation electrode.

The reason why the electron beam can be controlled by the voltage applied to the modulation electrode 4 is that the potential near the electron emission part 3 changes from positive to negative depending on the voltage of the modulation electrode, and the electron beam is accelerated or decelerated.

As explained above, in this example, the electron-emitting device and the modulation electrode are laminated via an insulating substrate, so alignment is easy, and since it is manufactured using thin film manufacturing technology, it can be used for large screens and high performance. It was possible to obtain a highly detailed display at a low price. Furthermore, the distance between the electron emitting section 3 and the modulation electrode 4 could be manufactured with extremely high precision, and a high-resolution image display device could be obtained.

In surface conduction electron-emitting devices, electrons with an initial velocity of several volts are emitted into a vacuum, and the present invention is extremely effective for modulating such devices. Further, the entire displayed image had high brightness and high contrast, and there was no uneven brightness.

Example 2 The electron-emitting device in Example 1 was made with a thickness (T) of 0.
．． Except for changing to a surface conduction type emitter with a diameter of 0.01 μm.
An electron beam generator and an image display device similar to those in Example 1 were manufactured. The device of the present example was also capable of displaying images of almost the same quality as that of the first example.

Example 3 The electron-emitting device in Example 1 had a thickness (T) of 2
An electron beam generating device and an image display device similar to those in Example I were manufactured except that a surface conduction type emission device having a diameter of 0.00 μm was used. The device of the present example was also capable of displaying images of almost the same quality as that of the first example.

Example 4 FIG. 5 is a diagram showing another embodiment of the device of the present invention.

FIG. 6 is an explanatory diagram of the manufacturing process in a cross section taken along line c-c' in FIG. 5. Here, the manufacturing method of this example will be explained. 9 is a contact hole.

(2) Four groups of linear modulation electrodes were formed in the same manner as in Example 1 (FIG. 6A).

(2) An insulating substrate 1 was formed in the same manner as in Example 1. However, the thickness of the insulating substrate 1 was set to 3 μm (FIG. 6B).

(2) A contact hole 9 as shown in FIGS. 5 and 6C is provided by etching technology. Such contact holes were formed by removing the insulating substrate 1 at positions sandwiching the element electrodes 2 (FIG. 6C). That is, the modulation electrode 4 is exposed through the contact hole.

■Element electrode 2 was created in the same manner as in Example 1 (Fig. 6D)
.

■Next, organic palladium is applied to the entire surface of the substrate by dipping. By baking this at 300° C. for 1 hour, palladium fine particles 7 were deposited on the entire surface of the substrate (FIG. 6E). Organic palladium is CCP-423 manufactured by Jitsukei Pharmaceutical Co., Ltd.
0 was used. In this process, not only ultrafine particles mainly composed of palladium, which are electron emitters, are provided between the opposing device electrodes 20, but also conductive fine particles are provided on the inner wall of the contact hole 9 and the surface of the insulating substrate 1. is precipitated. At this time, the sheet resistance of the surface of the insulating substrate is 0.
A value of 5×10 5 Ω/mouth to 1×10 9 Ω/mouth is preferable, and a range of I×10 5 Ω/mouth to I×1 O′ Ω/mouth is optimal.

The device electrode 2 was formed to have a thickness of 0.1 μm. In this example, the distance between the electron-emitting surface of the electron-emitting device and the modulation electrode is 3 μm, and the thickness of the electron-emitting device is 0.1 μm.

An image display device was manufactured in the same manner as in Example 1 using the electron beam generator formed by the process described above.

The size of the contact hole 9 in this embodiment is preferably about the same as the length (1) of the electron emitting section 3, as shown in FIG. Further, the distance (S) of the contact hole element electrode is preferably 108 m to 500 m, more preferably 25 m to 1 m.
00 μm is optimal.

In this embodiment, when a voltage is applied to the modulation electrode 4, a current flows through the contact hole 9 to change the potential on the surface of the insulating substrate, thereby controlling the surface potential of the insulating substrate near the element electrode 2.

In this example, the voltage applied to the modulation electrode 4 is -2
The electron beam is turned off at 5V or less and turned on at IOV or more.
I was able to control it.

This example has the same effect as Example 1, but in addition, compared to Example 1, the voltage applied to the modulation electrode is changed to about 2.
We were able to reduce it to 1/2.

This made it possible to significantly reduce the cost of the transistor for applying voltage to the modulation electrode.

Example 5 A similar image display device was produced in the same manner as in Example 1, except that the electron beam generator was changed to the device shown in FIG. 7. In FIG. 7, 31 is a glass substrate, 33 is an insulating substrate, 35 is an element electrode, 36 is an electron emitting portion, and 32 is a modulation electrode. Also, although not shown, as in Example 1, a group of linear electron emitting devices in which a plurality of electron emitting parts are arranged by device wiring electrodes on the surface of the substrate 33 and a group of modulating electrodes constitute an XY matrix and are arranged side by side. has been done. In this example, the thickness H of the electron-emitting device is 300 μm.
The distance from the modulation electrode to the electron emission part was 200 μm.

Also in the image display device of this example, a display image having substantially the same quality as that of Example 1 was obtained.

The toner-adsorbed portion moves as the recording medium 64 rotates, and when the static eliminator 66 releases the charge, the adsorbed toner falls. At this time, a paper 69 on which an image is to be formed is located between the recording medium 64 and the static eliminator 66, and the toner is dropped onto this paper 69.

The paper 69 that has received the toner moves to a fixing device (not shown), where the toner is fixed on the paper 69,
The image represented by the light emitting source 61 is reproduced and recorded on the paper 69.

On the other hand, the drum-shaped recording medium 64 further rotates and moves to a cleaner 67, where the remaining toner is removed, and is further charged by a charger 68.

Due to the advantages of the electron beam generating device of the present invention described above, the recording device described above has particularly high resolution, high speed, no exposure unevenness, and can obtain clear recorded images with high contrast.

Embodiment 6 FIG. 8 is a schematic diagram of an optical printer according to an embodiment of the present invention.

In the figure, 47 is a glass vacuum container, 41 is a face plate, 43 is an electrode for applying voltage to the phosphor, 42 is a rear plate, 1 is a glass substrate (insulating base), and 3 is a surface conduction electron-emitting device. , 4 is a modulation electrode, and 44 is an electrode for applying voltage to the electron-emitting device (DPSDff).
i), 46 is an electrode (G
t to GN), 48 is a light emitting source, and 45 is a recording medium.

The recording medium 45 was prepared by uniformly applying a photosensitive composition having the following composition onto a polyethylene terephthalate film to a thickness of 2 μm. The photosensitive composition includes: a, binder: 10 parts by weight of polyethylene methacrylate (trade name: Dyanal BR, Mitsubishi Rayon), b, monomer: trimethylolpropane triacrylate (trade name: TMPT).
A, Shin Nakamura Chemical) 10 parts by weight, C1 polymerization initiator: 2-methyl-2-morpholino(4-thiomethylphenyl)propan-1-one (trade name Irugaki Core 907, Ciba Geigy) 2.2 parts by weight. It was prepared using 70 parts by weight of methyl ethyl ketone as a solvent.

The phosphor of the face plate 41 is a silicate phosphor (Ba
, Mg5Zn) 3 Si 207 : Pb2+ was used.

Further, the light emitting source 48 was manufactured in the same manner as in Example 1.

Next, the driving method of this embodiment will be explained using FIG. 9(a). In the figure, 51 is the light emitting source 48.54 is the recording object 45.52
is a support body for the recording medium 45, and 53 is a conveyance roller for the recording medium 45. Here, the light emitting source 51 is the recording medium 5.
4 and at a position of 1 mm or less away from each other.

In this embodiment, the irradiation of each electron beam onto the phosphor is controlled by simultaneously applying modulation signals for l lines of the image to the modulation electrode according to the information signal in synchronization with driving the electron-emitting device array. , a light emitting pattern for l lines of the image is formed. The light beam emitted from the light emitter according to the light emission pattern is irradiated onto the recording medium, and the recording medium irradiated with the light is photopolymerized and hardened.

Next, the conveyance roller 53 is moved and similar driving is performed.

By performing such driving, a photopolymerization pattern corresponding to the information signal is formed on the recording medium as a photopolymerization pattern. An optical recording pattern was formed on polyethylene terephthalate by developing this photopolymerized pattern with methyl ethyl ketone.

The optical printer of this example produced a uniform, high-speed, high-contrast, and clear optical recording pattern.

Embodiment 7 FIG. 10 is a schematic diagram of an optical printer according to another embodiment. 61 is the same light emitting source as in Example 6, 64 is an electrophotographic photoreceptor which is a recording medium, 68 is a charger,
65 is a developer, 66 is a static eliminator, 67 is a cleaner, 69
is the paper on which the image is to be formed. Further, in this example, a yellow-green emitting phosphor of Zn 2 SiO 4 :Mn (PI phosphor) was used as the phosphor, and an amorphous silicon photoreceptor was used as the electrophotographic photoreceptor.

Next, a method of driving the optical printer of this embodiment will be explained.

First, the recording medium 64 is charged to a positive voltage by the charger 68. The charging voltage is suitably 100V to 500V, but is not limited to this. Next, the light emitting source 61 irradiates the recording medium 64 with a light emitting pattern corresponding to the information signal to eliminate electricity from the light irradiated portion and form an electrostatic latent image pattern. Next, the recording medium 64 is developed with toner particles by the developing device 65 .

〔effect〕

The electron beam generating device of the present invention described above is easy to manufacture because the modulation electrode and the electron-emitting device are easily aligned, and a sufficient amount of electron emission can be obtained compared to the conventional method. Unintended fluctuations in the amount of electron emission during driving and uneven modulation between multiple electron beams have been significantly improved. Furthermore, the electron beam generator of the present invention was excellent in modulation efficiency of the emitted electron beam.

Further, in an image display device using the electron beam generator of the present invention, the contrast of the displayed image was excellent, and the image display device had high brightness and little brightness unevenness.

Also, in the recording apparatus using the electron beam generator of the present invention, the contrast of recorded images was excellent and clear images could be provided.

Furthermore, in the above-mentioned image display device and recording device, the electron beam generating device of the present invention allows the electron-emitting devices to be arranged in a high density because the modulation electrode and the electron-emitting device can be easily aligned as described above. However, it does not interfere with the electron emission and modulation of the electron beam, as in the case of conventional methods.
High-definition, high-speed display images and recorded images can be formed.

[Brief explanation of drawings]

Fig. 1 is a diagram showing an embodiment of the electron beam generator of the present invention, Fig. 2 is a cross-sectional view taken along line A-A' in Fig. 1, and Fig. 3 is an image display using the electron beam generator of the present invention. Figures 4A to 4A to 4C are diagrams illustrating the manufacturing process of the electron beam generator of the present invention shown in Figure 1, and Figure 5 is a diagram showing an embodiment of the electron beam generator of the present invention. 6 AB to E are diagrams for explaining the manufacturing process of the electron beam generator of the present invention shown in FIG. 5, and FIG. 7 is a diagram showing another embodiment of the electron beam generator of the present invention. Figures 8, 9(a), 10, and 10 are diagrams showing another embodiment of the recording apparatus using the electron beam generator of the present invention, and Figure 11 and FIG. 12 is a diagram showing a conventional image display device. 1.33...Insulating base 2.35...Element electrode 3.36.74...Electron emission part 4.32.76.92...Modulation electrode 5.73...Element wiring electrode 8 .12.31.42.71.91... Substrate (rear plate) 9... Contact holes 11.41, 80.96... Face plate 14.
15.16.44.46... Wiring 17.47... Vacuum container 48.51.61... Light emitting source 45.54.64... Recorded object 52.53... Support means 65.・Developer 66 ・Static eliminator 67 ・Cleaner 68 ・Charger 69 ・Paper 72 ・Support 75 ・Electron passing hole 82 ・・Bright spot 93 of phosphor・・Thermionic beam source 94 ・・Upper deflection electrode 95 ・・Lower deflection electrode 33 ・Zen (b)

Claims (10)

[Claims] (1) In an electron beam generating device having an electron-emitting element and a modulation electrode that modulates an electron beam emitted from the electron-emitting element according to an information signal, the electron-emitting element and the modulation electrode are formed on an insulating substrate. An electron beam generating device characterized in that the electron emitting elements are stacked with each other with a thickness of 0.01 μm to 200 μm. (2) In an electron beam generating device having an electron-emitting element and a modulation electrode that modulates an electron beam emitted from the electron-emitting element according to an information signal, the electron-emitting element and the modulation electrode are formed on an insulating substrate. The distance from the modulating electrode to the electron emitting part of the electron emitting device is 0.0.
An electron beam generator characterized in that the particle size is 1 μm to 200 μm. (3) The electron-emitting device is a line-electron-emitting device having a plurality of line-shaped electron-emitting portions, and the plurality of line-electron-emitting devices and the plurality of modulation electrodes constitute an XY matrix. 3. The electron beam generator according to any one of 1 and 2. (4) In an image display device including an electron-emitting device, a modulation electrode that modulates an electron beam emitted from the electron-emitting device according to an information signal, and an image forming member that forms an image by irradiating the electron beam. , the modulation electrode, the electron-emitting device, and the image forming member are arranged in this order, the electron-emitting device and the modulation electrode are laminated with an insulating substrate in between, and the electron-emitting device has a thickness of 0. An image display device characterized in that the diameter is 01 μm to 200 μm. (5) In an image display device including an electron-emitting device, a modulation electrode that modulates an electron beam emitted from the electron-emitting device according to an information signal, and an image forming member that forms an image by irradiating the electron beam. , the modulation electrode, the electron-emitting device, and the image forming member are arranged in this order, and the electron-emitting device and the modulation electrode are laminated with an insulating substrate interposed therebetween, and the electrons of the electron-emitting device are transferred from the modulation electrode to the modulation electrode. An image display device characterized in that the distance to the emission part is 0.01 μm to 200 μm. (6) The electron-emitting device is a line-electron-emitting device having a plurality of line-shaped electron-emitting portions, and the plurality of line-electron-emitting devices and the plurality of modulation electrodes constitute an XY matrix. 4. The image display device according to any one of 4 and 5. (7) An electron-emitting device, a modulation electrode that modulates the electron beam emitted from the electron-emitting device according to an information signal, a light-emitting body that emits light when irradiated with the electron beam, and irradiation of light from the light-emitting body In a recording device having a recording medium on which an image is recorded by a recording medium, the modulation electrode, the electron-emitting device, and the light-emitting body are arranged in sequence, and the electron-emitting device and the modulation electrode are connected to each other through an insulating substrate. A recording device characterized in that the electron-emitting elements are stacked and have a thickness of 0.01 μm to 200 μm. (8) An electron-emitting device, a modulation electrode that modulates the electron beam emitted from the electron-emitting device according to an information signal, a light-emitting body that emits light when irradiated with the electron beam, and irradiation of light from the light-emitting body In a recording device having a recording medium on which an image is recorded by a recording medium, the modulation electrode, the electron-emitting device, and the light-emitting body are arranged in sequence, and the electron-emitting device and the modulation electrode are connected to each other through an insulating substrate. stacked, and the distance from the modulation electrode to the electron emitting part of the electron emitting device is 0.01 μm to
A recording device characterized in that the thickness is 200 μm. (9) An electron-emitting device, a modulation electrode that modulates the electron beam emitted from the electron-emitting device according to an information signal, a light-emitting body that emits light when irradiated with the electron beam, and irradiation of light from the light-emitting body In the recording apparatus, the modulation electrode, the electron-emitting device, and the light-emitting body are arranged in sequence, and the electron-emitting device and the modulation electrode are connected to an insulating substrate. are laminated through
A recording device characterized in that the thickness of the electron-emitting device is 0.01 μm to 200 μm. (10) an electron-emitting device; a modulation electrode that modulates an electron beam emitted from the electron-emitting device according to an information signal;
A recording device comprising a light-emitting body that emits light when irradiated with the electron beam, and a support means for a recording medium whose image is recorded by being irradiated with light from the light-emitting body, the modulation electrode, the electron-emitting element, and the light-emitting body. are arranged in sequence, the electron-emitting device and the modulation electrode are laminated via an insulating substrate, and the distance from the modulation electrode to the electron-emitting part of the electron-emitting device is 0.01 μm to 200 μm. A recording device characterized by: