JPH04130629A - Etchant mixer - Google Patents
Etchant mixerInfo
- Publication number
- JPH04130629A JPH04130629A JP25250690A JP25250690A JPH04130629A JP H04130629 A JPH04130629 A JP H04130629A JP 25250690 A JP25250690 A JP 25250690A JP 25250690 A JP25250690 A JP 25250690A JP H04130629 A JPH04130629 A JP H04130629A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- gas
- mixing vessel
- bubbling
- ultrasonics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 claims abstract description 33
- 238000002156 mixing Methods 0.000 claims abstract description 23
- 230000005587 bubbling Effects 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 abstract description 31
- 239000000243 solution Substances 0.000 abstract description 18
- 238000001914 filtration Methods 0.000 abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 10
- 238000010790 dilution Methods 0.000 abstract description 5
- 239000012895 dilution Substances 0.000 abstract description 5
- 239000010419 fine particle Substances 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000011550 stock solution Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000007865 diluting Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000004887 air purification Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010907 mechanical stirring Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概 要〕
エツチング液調合装置の構造に関し、
調合後のエツチング液のエッチレートを早期に安定化さ
せることが可能なエツチング液調合装置を提供すること
を目的とし、
調合槽と、該調合槽内の薬液に超音波振動を与える超音
波加振手段と、該薬液中にガスを供給するバブリング手
段とを有するように構成する。[Detailed Description of the Invention] [Summary] Regarding the structure of an etching liquid blending device, an object of the present invention is to provide an etching solution blending device that can quickly stabilize the etch rate of the etching solution after blending. The device is configured to include a tank, an ultrasonic vibration means for applying ultrasonic vibration to the chemical liquid in the mixing tank, and a bubbling means for supplying gas into the chemical liquid.
本発明は、エツチング液調合装置の構造に関する。 The present invention relates to the structure of an etching liquid preparation device.
近年、半導体装置のパターンの微細化が進み、その製造
工程、特にウェーハ処理工程において°は、ウェーハ上
への微粒子の付着が製品歩留りに及ぼす影響は益々大き
くなって来た。それ故、ウェーハ処理工程で頻繁に行わ
れる5iftエツチングにおいてもウェーハへの微粒子
付着の防止は重要な課題となっており、その対策として
エツチング液のフィルタリングや空気の清浄化を強化す
る等の他、ウェーハへの微粒子付着を抑制する目的で界
面活性剤を添加したエツチング液が使用されるようにな
っている。このエツチング液は例えば濃度50%の弗酸
に弗素系の界面活性剤を添加したものであり、通常これ
に純水を加えて所望の濃度(例えば5%)に希釈して使
用する。In recent years, as the patterns of semiconductor devices have become finer and finer, the influence of the adhesion of fine particles on the wafer on the product yield has become increasingly large in the manufacturing process, particularly in the wafer processing process. Therefore, even in 5ift etching, which is frequently performed in the wafer processing process, preventing fine particles from adhering to the wafer is an important issue, and countermeasures include filtering the etching solution and strengthening air purification. Etching liquids containing surfactants are now being used to suppress the adhesion of fine particles to wafers. This etching solution is made by adding a fluorine-based surfactant to, for example, 50% hydrofluoric acid, and is usually used after adding pure water to dilute it to a desired concentration (eg, 5%).
従来のエツチング液調合装置の例を第3図を参照しなが
ら説明する。第3図は従来のエツチング液調合装置の概
略構成図である。図中、■は調合液、11は調合槽、1
2は原液供給手段、13は純水供給手段、14はポンプ
、フィルタ、配管等からなる循環ろ過手段である。An example of a conventional etching liquid preparation device will be described with reference to FIG. FIG. 3 is a schematic diagram of a conventional etching liquid preparation device. In the figure, ■ is the blended liquid, 11 is the blending tank, and 1
2 is a stock solution supply means, 13 is a pure water supply means, and 14 is a circulation filtration means consisting of a pump, a filter, piping, etc.
このエツチング液調合装置は、原液供給手段12と純水
供給手段13によりそれぞれ所定量の原液と純水とを調
合槽11に入れて調合液Iとし、これを循環ろ過手段1
4により微粒子を除去すると共に液を攪拌して、所望の
濃度の希釈エツチング液を得るように構成されている。In this etching liquid preparation device, a predetermined amount of the stock solution and pure water are put into a mixing tank 11 by a stock solution supply means 12 and a pure water supply means 13, respectively, to form a preparation solution I, and this is supplied to a circulating filtration means 1.
4 to remove fine particles and stir the solution to obtain a diluted etching solution with a desired concentration.
尚、循環ろ過手段14の代わりに機械的攪拌手段(図示
はない)を調合槽1】内に備えている例もある。There is also an example in which a mechanical stirring means (not shown) is provided in the mixing tank 1 instead of the circulation filtering means 14.
ところが、このような装置を用いて50%弗酸に弗素系
の界面活性剤を添加したエツチング液を純水で希釈する
と、5iOzに対するエッチレートが希釈直後は低く、
その後徐々に高(なり、長日時を経て安定するという現
象を生じ、希釈後、長期にわたり使用出来ず、従って希
釈済のエツチング液を大量に保管しなければならない、
という問題があった。However, when using such an apparatus and diluting an etching solution made of 50% hydrofluoric acid with a fluorine-based surfactant added with pure water, the etch rate for 5 iOz is low immediately after dilution.
After that, the etching solution gradually becomes high (and becomes stable over a long period of time), and after dilution, it cannot be used for a long period of time, so a large amount of diluted etching solution must be stored.
There was a problem.
本発明は、このような問題を解決して、希釈後早期にエ
ッチレートが安定するエツチング液を得ることが可能な
エツチング液調合装置を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to solve these problems and provide an etching solution preparation device that can obtain an etching solution whose etch rate is stabilized quickly after dilution.
この目的は、本発明によれば、調合槽と、該調合槽内の
薬液に超音波振動を与える超音波加振手段と、該薬液中
にガスを供給するバブリング手段とを有することを特徴
とするエツチング液調合装置とすることで、達成される
。According to the present invention, this object is characterized by comprising a mixing tank, an ultrasonic vibration means for applying ultrasonic vibration to the chemical liquid in the mixing tank, and a bubbling means for supplying gas into the chemical liquid. This can be achieved by using an etching liquid preparation device that does this.
超音波加振とバブリングに攪拌、脱泡等の作用があり、
界面活性剤の分散を促進するものと思われる。Ultrasonic vibration and bubbling have effects such as stirring and defoaming.
It seems to promote the dispersion of the surfactant.
本発明に基づくエツチング液調合装置の実施例を、第1
図及び第2図を参照しながら説明する。A first embodiment of the etching liquid preparation device according to the present invention is described below.
This will be explained with reference to the figures and FIG.
第1図は本発明の実施例のエツチング液調合装置の概略
構成図である。図中、lは調合液、11は調合槽、12
は原液供給手段、13は純水供給手段、14は循環ろ過
手段、15は超音波加振手段、16はバブリング手段で
ある。FIG. 1 is a schematic diagram of an etching liquid preparation apparatus according to an embodiment of the present invention. In the figure, l is the blended liquid, 11 is the blending tank, and 12
13 is a pure water supply means, 14 is a circulating filtration means, 15 is an ultrasonic vibration means, and 16 is a bubbling means.
循環ろ過手段14はポンプ、フィルタ、配管等がらなっ
ており、調合槽11に連通して調合液I中の微粒子を除
去すると共に液を攪拌する。超音波加振手段15は超音
波発生装置15a 、振動子15b等がらなり、振動子
15bは調合槽11底部に固着されている。バブリング
手段16はガス供給手段(図示は省略)に連通しており
、多数の小孔からガスを調合液1中に放出する。The circulation filtration means 14 is composed of a pump, a filter, piping, etc., and communicates with the mixing tank 11 to remove particulates from the mixed liquid I and to stir the liquid. The ultrasonic excitation means 15 includes an ultrasonic generator 15a, a vibrator 15b, etc., and the vibrator 15b is fixed to the bottom of the mixing tank 11. The bubbling means 16 communicates with a gas supply means (not shown) and releases gas into the liquid mixture 1 from a large number of small holes.
この装置によりエツチング液を希釈するには、それぞれ
所定量の原液と純水とを調合槽IIに入れ、これに超音
波振動を加えると共にガスのバブリングを行いつつ、循
環ろ過を所定の時間続ける。To dilute the etching solution using this device, predetermined amounts of the stock solution and pure water are placed in a mixing tank II, and while applying ultrasonic vibration and gas bubbling, circulation filtration is continued for a predetermined period of time.
本発明者がこの装置により50%弗酸に弗素系の界面活
性剤を添加したエツチング液の原液を純水で5%弗酸に
希釈した結果を第2図に示す。これは、超音波の周波数
41kH2、高周波出力35Wの超音波発生装置を用い
た超音波加振と、清浄化したヘリウムガスのバブリング
とを行いつつ、液量51の調合液を2時間にわたり循環
ろ過を続けたものであり、5iftに対するエッチレー
トの経時変化を実線で記した。参考のため、従来の装置
で液量51の前記調合液を2時間にわたり循環ろ過を続
けた結果を同図に点線で記した。点線では安定化するま
でに約20日を要しているのに対して、実線では約2日
で安定している。同図から明らかなように、本発明のエ
ツチング液調合装置により希釈したエツチング液の5i
02に対するエッチレートは、希釈後極めて短期間で安
定し、使用可能となる。FIG. 2 shows the results of diluting a stock solution of an etching solution prepared by adding a fluorine-based surfactant to 50% hydrofluoric acid with pure water to 5% hydrofluoric acid using this apparatus. This involves circulating filtration of a blended liquid with a liquid volume of 51 for 2 hours while performing ultrasonic vibration using an ultrasonic generator with an ultrasonic frequency of 41 kHz and a high-frequency output of 35 W, and bubbling purified helium gas. The change in etch rate over time with respect to 5 ift is shown by a solid line. For reference, the result of continuous circulation filtration of the above-mentioned liquid mixture with a liquid volume of 51 for 2 hours using a conventional device is shown in the same figure with a dotted line. The dotted line takes about 20 days to stabilize, while the solid line takes about 2 days to stabilize. As is clear from the figure, 5i of the etching solution diluted by the etching solution preparation device of the present invention.
The etch rate for 02 becomes stable in a very short period of time after dilution and becomes usable.
本発明は以上の実施例に限定されることなく、更に種々
変形して実施出来る。例えば、バブリングのガスにヘリ
ウム以外のガスを使用することが可能である。The present invention is not limited to the above embodiments, but can be implemented with various modifications. For example, it is possible to use a gas other than helium as the bubbling gas.
〔発明の効果〕
以上説明したように、本発明によれば、調合後のエツチ
ング液のエッチレートを早期に安定化させることが可能
なエツチング液調合装置を提供することが出来、大量の
希釈済エツチング液を保管する必要がなくなる。[Effects of the Invention] As explained above, according to the present invention, it is possible to provide an etching liquid preparation device that can quickly stabilize the etch rate of the etching liquid after preparation, and to process a large amount of diluted etching liquid. There is no need to store etching solution.
第1図は本発明の実施例のエツチング液調合装置の概略
構成図、
第2図はエッチレートの経時変化を示すグラフ、第3図
は従来のエツチング液調合装置の概略構成図、である。
図中、■は調合液、
11 ま調合槽、
12 ま原液供給手段、
13は純水供給手段、
14 ま循環ろ過手段、
は超音波加振手段、
はバブリング手段、
である。
12Jヨ夜イタミr臼+j2
末光帆の大先例の工、千−ブ歳調令IJ/Mu4;構成
図軽逓−1記(ロ)
玉、ッ+L−ト/7経峙裳化範汀、′T7゛つフ第
図
名T又〆)王、ッ今ンフ”液ハg合オ之屓/フ看1βイ
ノ糞ハd昭哨
関FIG. 1 is a schematic diagram of an etching liquid preparation apparatus according to an embodiment of the present invention, FIG. 2 is a graph showing changes in etching rate over time, and FIG. 3 is a schematic diagram of a conventional etching liquid preparation apparatus. In the figure, ■ is a mixed liquid, 11 is a mixing tank, 12 is a stock solution supply means, 13 is a pure water supply means, 14 is a circulating filtration means, is an ultrasonic vibration means, and is a bubbling means. 12J yo night damage r mortar + j2 Suemitsuho's great precedent work, 1000 years old survey order IJ/Mu4; Composition diagram light transmission - 1 record (b) ball, + L - / 7 transverse modelization standard, 'T7゛゛゛゛゛ 〆〆〆)〆゛゛゛゛゛゛゛ 〆〆〆)〆〆゛゛゛゛゛゛゛ 〆〆〆)
Claims (1)
音波加振手段と、該薬液中にガスを供給するバブリング
手段とを有することを特徴とするエッチング液調合装置
。An etching solution mixing device comprising: a mixing tank; ultrasonic vibration means for applying ultrasonic vibration to a chemical solution in the mixing tank; and bubbling means for supplying gas into the chemical solution.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25250690A JPH04130629A (en) | 1990-09-20 | 1990-09-20 | Etchant mixer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25250690A JPH04130629A (en) | 1990-09-20 | 1990-09-20 | Etchant mixer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04130629A true JPH04130629A (en) | 1992-05-01 |
Family
ID=17238323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25250690A Pending JPH04130629A (en) | 1990-09-20 | 1990-09-20 | Etchant mixer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04130629A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0708981A1 (en) * | 1993-07-16 | 1996-05-01 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
KR20000067106A (en) * | 1999-04-23 | 2000-11-15 | 구본준 | An apparatus for etching a glass substrate |
JP2011077364A (en) * | 2009-09-30 | 2011-04-14 | Hitachi Cable Ltd | Method of manufacturing printed circuit board, and manufacturing apparatus for the printed wiring board |
WO2011099089A1 (en) * | 2010-02-15 | 2011-08-18 | パナソニック株式会社 | Method for producing semiconductor device and device for producing semiconductor device using same |
CN105293938A (en) * | 2015-11-30 | 2016-02-03 | 吕建平 | Ultrasonic frosting device and operation process thereof |
CN113257661A (en) * | 2021-04-14 | 2021-08-13 | 中环领先半导体材料有限公司 | Method for improving rinsing effect of 8-inch abrasive washing FO tank |
-
1990
- 1990-09-20 JP JP25250690A patent/JPH04130629A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0708981A1 (en) * | 1993-07-16 | 1996-05-01 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
EP0708981A4 (en) * | 1993-07-16 | 1997-03-12 | Legacy Systems Inc | Process and apparatus for the treatment of semiconductor wafers in a fluid |
KR20000067106A (en) * | 1999-04-23 | 2000-11-15 | 구본준 | An apparatus for etching a glass substrate |
JP2011077364A (en) * | 2009-09-30 | 2011-04-14 | Hitachi Cable Ltd | Method of manufacturing printed circuit board, and manufacturing apparatus for the printed wiring board |
WO2011099089A1 (en) * | 2010-02-15 | 2011-08-18 | パナソニック株式会社 | Method for producing semiconductor device and device for producing semiconductor device using same |
CN105293938A (en) * | 2015-11-30 | 2016-02-03 | 吕建平 | Ultrasonic frosting device and operation process thereof |
CN113257661A (en) * | 2021-04-14 | 2021-08-13 | 中环领先半导体材料有限公司 | Method for improving rinsing effect of 8-inch abrasive washing FO tank |
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