JPH04123307A - Magneto-resistance effect type head - Google Patents
Magneto-resistance effect type headInfo
- Publication number
- JPH04123307A JPH04123307A JP24234490A JP24234490A JPH04123307A JP H04123307 A JPH04123307 A JP H04123307A JP 24234490 A JP24234490 A JP 24234490A JP 24234490 A JP24234490 A JP 24234490A JP H04123307 A JPH04123307 A JP H04123307A
- Authority
- JP
- Japan
- Prior art keywords
- magnetoresistive
- film
- pair
- magnetoresistive film
- head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims abstract description 14
- 230000005291 magnetic effect Effects 0.000 claims abstract description 45
- 239000004020 conductor Substances 0.000 claims abstract description 25
- 230000004907 flux Effects 0.000 claims abstract description 8
- 239000012212 insulator Substances 0.000 claims abstract 7
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 31
- 239000010409 thin film Substances 0.000 claims 1
- 230000010485 coping Effects 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910003271 Ni-Fe Inorganic materials 0.000 description 6
- 239000000696 magnetic material Substances 0.000 description 6
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910018499 Ni—F Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は媒体に磁気的に記録された情報を読取るための
専用の感磁素子に係る。さらに詳しくは強磁性体膜の磁
気抵抗効果を利用した高感度の磁気抵抗効果型ヘッドに
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dedicated magnetically sensitive element for reading information magnetically recorded on a medium. More specifically, the present invention relates to a highly sensitive magnetoresistive head that utilizes the magnetoresistive effect of a ferromagnetic film.
従来の磁気抵抗効果型ヘッドは、例えば特開昭５０−６
５２１３号公報において記載されている６第４図に上記
従来の磁気抵抗効果型磁気ヘッドの構造を示す。基板１
上に下部シールド部材２を形成し、その上に絶縁層３を
基板上で全面に約２０００人程度の厚さに均一な膜厚と
なるように堆積する。A conventional magnetoresistive head is, for example, disclosed in Japanese Patent Application Laid-Open No. 50-6
FIG. 6, which is described in Japanese Patent No. 5213, shows the structure of the conventional magnetoresistive magnetic head. Board 1
A lower shield member 2 is formed thereon, and an insulating layer 3 is deposited over the entire surface of the substrate to a uniform thickness of about 2,000 layers.
その上に２００〜５００人の厚さの磁気抵抗効果素子４
を形成した後、その両端に電極５を接続する。再び絶縁
層６を基板全面で均一な膜厚となるように堆積した後、
上部シールド部材７を形成する。On top of that is a magnetoresistive element 4 with a thickness of 200 to 500 people.
After forming, electrodes 5 are connected to both ends thereof. After depositing the insulating layer 6 again to a uniform thickness over the entire surface of the substrate,
An upper shield member 7 is formed.
磁気記録密度の増加の要求にともなって記録ビット長を
減少させる必要が生じる。磁気抵抗効果型磁気ヘッドを
用いて再生を行う場合、前後に隣接した記録信号の影響
を除去し、ノイズを低減するためにはトラック部におけ
る上部シールド部材と下部シールド部材の間隔を記録ビ
ット長以下に狭めなけ九ばならない。そのためには、磁
気抵抗効果素子と絶縁層の膜厚を薄くする必要がある。With the demand for increased magnetic recording density, it becomes necessary to reduce the recording bit length. When performing reproduction using a magnetoresistive magnetic head, in order to eliminate the influence of adjacent recorded signals and reduce noise, the distance between the upper shield member and lower shield member in the track section must be equal to or less than the recording bit length. We have to narrow it down to nine. For this purpose, it is necessary to reduce the film thickness of the magnetoresistive element and the insulating layer.
しかし、磁気抵抗効果素子として一般に用いられている
ＮｉＦｅ合金等は、膜厚が約４０ｎｍ以下になると表面
の構造が不均一になり、磁気特性が急激に低下する。そ
のため、磁気抵抗効果膜の膜厚限界は制限されてしまう
。そこで、絶縁層の膜厚を出来る限り薄くしなければな
らない、しかし。However, when the film thickness of NiFe alloys and the like commonly used as magnetoresistive elements becomes less than about 40 nm, the surface structure becomes non-uniform and the magnetic properties rapidly deteriorate. Therefore, the thickness limit of the magnetoresistive film is limited. Therefore, the thickness of the insulating layer must be made as thin as possible.
上述した磁気抵抗効果型磁気ヘッドでは、絶縁層の膜厚
が基板全面で均一となるように基板面にほぼ垂直な方向
から堆積されている。そのため、磁気抵抗効果素子と電
極の接続部４１や、電極が磁気抵抗効果素子に乗り上げ
る部分４２などに生じる段差では、絶縁層の膜厚が薄く
なってしまい電極と上下シールド間で短絡するおそれが
あった。In the above-described magnetoresistive magnetic head, the insulating layer is deposited in a direction substantially perpendicular to the substrate surface so that the thickness of the insulating layer is uniform over the entire surface of the substrate. Therefore, the thickness of the insulating layer becomes thinner at the step 42 where the magnetoresistive element and the electrode connect, or the part 42 where the electrode rides on the magnetoresistive element, and there is a risk of a short circuit between the electrode and the upper and lower shields. there were.
本発明の目的は、上記従来技術における問題点を解消す
るものであって、トラック部における狭ギャップ化を図
りつつ、段差部において短絡しない磁気抵抗効果型磁気
ヘッドを提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems in the prior art, and to provide a magnetoresistive magnetic head that does not short-circuit at step portions while achieving a narrow gap at the track portion.
上記本発明を達成するために、本発明は磁気抵抗効果膜
と、該磁気抵抗効果膜に電流を流す為に上記磁気抵抗効
果膜に接続された一対の導体部と。In order to achieve the above-mentioned present invention, the present invention includes a magnetoresistive film, and a pair of conductor portions connected to the magnetoresistive film for flowing current through the magnetoresistive film.
上記磁気抵抗効果膜の上下に設けられたシールド層と、
該シールド層と上記磁気抵抗効果膜の間に設けられた絶
縁体層を有し、上記一対の導体部の間隔を磁気記録媒体
からの磁束信号を検出するトラック部とした磁気抵抗効
果型ヘッドにおいて、上記トラック部における絶縁体膜
の厚さと、トラック部以外の絶縁体膜の厚さが異なる磁
気抵抗効果型ヘッドとして構成される。A shield layer provided above and below the magnetoresistive film;
A magnetoresistive head including an insulating layer provided between the shield layer and the magnetoresistive film, the distance between the pair of conductor portions being a track portion for detecting a magnetic flux signal from a magnetic recording medium. The head is constructed as a magnetoresistive head in which the thickness of the insulating film in the track portion is different from the thickness of the insulating film other than the track portion.
磁気抵抗効果素子のトラック部の上下には設計値に従っ
た膜厚の絶縁層を薄く堆積でき、高記録密度化に対応し
た磁気ヘッドを作製できる。そして、トラック部以外の
部分では絶縁層の膜厚を厚くできるため、断差部におけ
る導線とシールド部材の短絡を防止できる。A thin insulating layer having a film thickness according to a design value can be deposited above and below the track portion of the magnetoresistive element, and a magnetic head compatible with high recording density can be manufactured. Furthermore, since the thickness of the insulating layer can be made thicker in parts other than the track part, it is possible to prevent a short circuit between the conducting wire and the shield member in the difference part.
以下に本発明の一実施例を挙げ、図面に基づいてさらに
詳細に説明する。An embodiment of the present invention will be described below in more detail based on the drawings.
（実施例１）
第１図（ａ）、（ｂ）は、本実施例において例示する磁
気抵抗効果型磁気ヘッドの概略を示す。(Example 1) FIGS. 1(a) and 1(b) schematically show a magnetoresistive magnetic head exemplified in this example.
第２図は本実施例において例示する磁気抵抗効果型磁気
ヘッドの製造工程を示す図である。FIG. 2 is a diagram showing the manufacturing process of the magnetoresistive magnetic head exemplified in this embodiment.
本実施例においては、非磁性基板１上にＮｉ−Ｆｅ合金
などの軟磁性体膜よりなる磁気シールド２を０．５〜３
μｍの厚さに、真空蒸着法やスパッタ法などの手段で積
層し、ホトリソグラフィの手法により、所定の形状にパ
ターニングした。その上に絶縁層３ａとなる５ｉｎ２や
ＡＱ、Ｏ，を０．０５〜０．５μｍの厚さに、スパッタ
法を用いて積層した。In this embodiment, a magnetic shield 2 made of a soft magnetic material film such as Ni-Fe alloy is placed on a non-magnetic substrate 1 with a thickness of 0.5 to 3
The layers were laminated to a thickness of μm by means such as vacuum evaporation or sputtering, and patterned into a predetermined shape by photolithography. On top of that, 5in2, AQ, and O, which will become the insulating layer 3a, are laminated to a thickness of 0.05 to 0.5 μm using a sputtering method.
磁気抵抗効果膜４ａとなるＮｉ−Ｆｅ合金膜とＮｂなど
からなるシャント膜４ｂを真空蒸着法やスパッタ法など
を用いて絶縁層３ａの上に積層した後、ホトリソグラフ
ィの手法により所定の形状にパターニングした。なお、
磁気抵抗効果膜４ａとしてはＮｉ−Ｆｅ合金のほかに、
例えばＮｉ−Ｃ０合金など磁気抵抗効果をもつ他の合金
系材料を使用してもなんら差し支えない。After laminating a Ni-Fe alloy film, which will become the magnetoresistive film 4a, and a shunt film 4b made of Nb or the like on the insulating layer 3a using a vacuum evaporation method or a sputtering method, they are formed into a predetermined shape using a photolithography method. patterned. In addition,
As the magnetoresistive film 4a, in addition to Ni-Fe alloy,
For example, there is no problem in using other alloy-based materials that have a magnetoresistive effect, such as a Ni-C0 alloy.
次に絶縁層３ｂとなるＳ ｉ Ｏ，やＡｌ２Ｏ，を、０
．０５〜０．５μｍの厚さに磁気抵抗効果素子４以外の
部分に堆積する。このとき、磁気抵抗効果素子４の上に
マスクとしてレジストパターンを形成してからＳ ｉ
Ｏ，やＡｌ２Ｏ，などをイオンビームスパッタ法を用い
て堆積し、その後レジストパターンを有機溶剤などで除
去するりフトオフ法を用いる。Next, SiO, Al2O, which will become the insulating layer 3b, is
．． The film is deposited on parts other than the magnetoresistive element 4 to a thickness of 0.05 to 0.5 μm. At this time, a resist pattern is formed as a mask on the magnetoresistive element 4, and then Si
A lift-off method is used in which O, Al2O, or the like is deposited using an ion beam sputtering method, and then the resist pattern is removed using an organic solvent or the like.
そして引き続き、磁気抵抗効果膜４ａとシャント膜４ｂ
の端部に検出電流を流すための導体部５と絶縁層６ａを
、ＣｕやＡｕ、Ａｇなどの良導体を０ 、１〜０ 、５
ｐ ｍの厚さに、Ｓｉｎ、やＡＱ、Ｏ。Then, the magnetoresistive film 4a and the shunt film 4b
The conductor part 5 and the insulating layer 6a for passing a detection current through the end of the
Sin, AQ, O to the thickness of pm.
などの絶縁材料を０．１〜１μｍの厚さに連続して積層
し、ホトリソグラフィの手法により２層同時にパターニ
ングして作製した。ここで、２本の導体部５の間隔すな
わちトラックｌｉＴｗは５μｍとした。また、導体部５
の材料としてＣｕを用いた場合には、酸化防止のために
Ｃｒ層を上下に設けると良い。The insulating materials were successively laminated to a thickness of 0.1 to 1 μm, and the two layers were simultaneously patterned using photolithography. Here, the interval between the two conductor parts 5, that is, the track liTw was set to 5 μm. In addition, the conductor portion 5
When Cu is used as the material, it is preferable to provide Cr layers above and below to prevent oxidation.
次に、絶縁層６ｂとなるＳｉＯ□やＡＪｘＯａを基板全
面で均一に形成するためにスパッタ法などにより０．０
５〜１．０μｍの厚さに積層した。Next, in order to uniformly form SiO□ or AJxOa, which will become the insulating layer 6b, on the entire surface of the substrate, a sputtering method or the like is used to
The layers were laminated to a thickness of 5 to 1.0 μm.
最後に、Ｎｉ−Ｆｅ合金などの軟磁性体膜よりなる磁気
シールド７を０．５〜３μｍの厚さに。Finally, the magnetic shield 7 made of a soft magnetic film such as Ni-Fe alloy is made to have a thickness of 0.5 to 3 μm.
真空蒸着法やスパッタ法などの手段で積層し、ホトリソ
グラフィの手法により、所定の形状にパタニングした。The layers were laminated by means such as vacuum evaporation or sputtering, and patterned into a predetermined shape by photolithography.
なお、本実施例においては、バイアス印加手段としてシ
ャントｌ［４ｂ （Ｎｂ膜りを設ける場合を示したが、
その他に電流線あるいは永久磁石などを用いても本発明
の効果は変わらない、また、磁気シールド２，７に軟磁
性体膜を使用する例を挙げたが、これの代りにバルクの
軟磁性体を用いても上記と同様の効果が得られることは
言うまでもない。In addition, in this example, the case where a shunt l[4b (Nb film) is provided is shown as a bias application means, but
The effect of the present invention does not change even if other current wires or permanent magnets are used. Also, although the example of using a soft magnetic material film for the magnetic shields 2 and 7 has been given, instead of this, a bulk soft magnetic material can be used. It goes without saying that the same effect as above can be obtained by using .
（実施例２）
第３図は第２の実施例である磁気抵抗効果型磁気ヘッド
の製造工程を示す図である。(Example 2) FIG. 3 is a diagram showing a manufacturing process of a magnetoresistive magnetic head according to a second example.
本実施例においては、非磁性基板１上にＮｉ−Ｆｅ合金
などの軟磁性体膜よりなる磁気シールド２を０．５〜３
μｍの厚さに、真空蒸着法やスパッタ法などの手段で積
層し、ホトリソグラフィの手法により、所定の形状にパ
ターニングした。その上に絶縁層３ａとなるＳｉＯ，や
Ａ Ｑ ａ Ｏｘを０．０５〜０．５μｍの厚さに、ス
パッタ法を用いて積層した後、次の工程で形成する磁気
抵抗効果膜４ａの幅と同等以上の部分をイオンミリング
法などを用いて除去した。In this embodiment, a magnetic shield 2 made of a soft magnetic material film such as Ni-Fe alloy is placed on a non-magnetic substrate 1 with a thickness of 0.5 to 3
The layers were laminated to a thickness of μm by means such as vacuum evaporation or sputtering, and patterned into a predetermined shape by photolithography. After laminating SiO or AQ a Ox to a thickness of 0.05 to 0.5 μm on top of the insulating layer 3a using a sputtering method, the width of the magnetoresistive film 4a to be formed in the next step is determined. A portion equivalent to or larger than that was removed using ion milling method.
次にＪｌ！縁層３ｂとなるＳ ｉ Ｏ２やＡρ、０３を
、スパッタ法などにより０．０５〜１．０μｍの厚さに
積層した。ついで、磁気抵抗効果膜４ａとなるＮｉ−Ｆ
ｅ合金膜とＮｂよりなるに＝Ｍシャント膜４ｂを真空蒸
着法やスパッタ法などを用いて絶縁層３ｂの上に積層し
た後、ホトリソグラフィの手法により所定の形状にパタ
ーニングした。なお、磁気抵抗効果膜４ａとしてはＮ
ｉ −Ｆ ｅ合金のほかに、例えばＮｉ−Ｃｏ合金など
磁気抵抗効果をもつ他の合金系材料を使用してもなんら
差し支えない。Next Jl! S i O 2 and Aρ,03, which will become the edge layer 3b, are laminated to a thickness of 0.05 to 1.0 μm by sputtering or the like. Next, Ni-F, which becomes the magnetoresistive film 4a, is
An =M shunt film 4b made of an e-alloy film and Nb was laminated on the insulating layer 3b using a vacuum evaporation method or a sputtering method, and then patterned into a predetermined shape using a photolithography method. Note that the magnetoresistive film 4a is made of N.
In addition to the i-Fe alloy, there is no problem in using other alloy-based materials that have a magnetoresistive effect, such as a Ni-Co alloy.
そして引き続き、磁気抵抗効果膜４ａの端部に検出電流
を流すための導体部５としてＣｕやＡｕ。Subsequently, Cu or Au is used as the conductor portion 5 for flowing a detection current to the end of the magnetoresistive film 4a.
Ａｇなどの良導体を、絶縁層６ａとして５ｉｎ２やＡＪ
２０．などの絶縁材料を連続して積層し、ホトリソグラ
フィの手法によりパターニングして作製した。ここで、
２本の導体部５の間隔すなわちトラック幅Ｔｗは５μｍ
とした。また、導体部５の材料としてＣｕを用いた場合
には、酸化防止のためにＣｒ層を上下に設けると良い。A good conductor such as Ag is used as the insulating layer 6a for 5in2 or AJ.
20. It was fabricated by successively laminating insulating materials such as and patterning them using photolithography. here,
The distance between the two conductor parts 5, that is, the track width Tw is 5 μm.
And so. Further, when Cu is used as the material for the conductor portion 5, it is preferable to provide upper and lower Cr layers to prevent oxidation.
次に、絶縁層６ｂとなる５ｉ０２やＡｆｉ、Ｏ，を基板
全面で均一に形成するためにスパッタ法などにより０．
０５〜１．０μｍの厚さに積層した。Next, in order to uniformly form 5i02, Afi, and O, which will become the insulating layer 6b, on the entire surface of the substrate, a sputtering method or the like is used.
The layers were laminated to a thickness of 0.05 to 1.0 μm.
最後に、Ｎｉ−Ｆｅ合金などの軟磁性体膜よりなる磁気
シールド７を０．５〜３μｍの厚さに、真空蒸着法やス
パッタ法などの手段で積層し、ホトリソグラフィの手法
により、所定の形状にパターニングした。Finally, a magnetic shield 7 made of a soft magnetic material film such as Ni-Fe alloy is laminated to a thickness of 0.5 to 3 μm by means such as vacuum evaporation or sputtering, and a predetermined shape is formed by photolithography. Patterned into a shape.
なお、本実施例においても、バイアス印加手段としてシ
ャント膜４ｂ（Ｎｂ膜）を設ける場合を示したが、その
他に電流線あるいは永久磁石などを用いても本発明の効
果は変わらない、また、磁気シールド２，７に軟磁性体
膜を使用する例を挙げたが、これの代わりにバルクの軟
磁性体を用いても上記と同様の効果が得られることは言
うまでもない。Although this embodiment also shows the case where the shunt film 4b (Nb film) is provided as the bias applying means, the effect of the present invention does not change even if a current wire or a permanent magnet is used in addition. Although an example has been given in which soft magnetic films are used for the shields 2 and 7, it goes without saying that the same effect as described above can be obtained even if a bulk soft magnetic material is used instead.
以上詳細に説明したごとく本発明の磁気抵抗効果型磁気
ヘッドは、磁気抵抗効果素子のトラック部の上下には設
計値に従った膜厚の絶縁層を堆積でき、高記録密度化に
対応した磁気ヘッドを作製できる。そして、トラック部
以外の部分では絶縁層の膜厚を厚くできるため、断差部
における導線とシールド層の短絡を防止できる効果があ
る。As explained in detail above, the magnetoresistive magnetic head of the present invention is capable of depositing an insulating layer with a film thickness according to the design value above and below the track portion of the magnetoresistive element, and has a magnetic head that supports high recording density. Heads can be made. Furthermore, since the thickness of the insulating layer can be made thicker in parts other than the track part, short circuits between the conducting wire and the shield layer in the difference part can be prevented.
第１図（ａ）、（ｂ）は本発明の磁気抵抗効果型磁気ヘ
ッドの概略を示す斜視図と断面図、第２図は本発明の磁
気抵抗効果型ヘッドの製造工程を示した断面図、第３図
は本発明の磁気抵抗効果型磁気ヘッドの他の製造工程を
示した断面図、第４図は従来の磁気抵抗効果型磁気ヘッ
ドの概略を示す斜視図である。
’ｆ）＋ 凹
（メ〕
猶
図1(a) and (b) are a perspective view and a cross-sectional view schematically showing the magnetoresistive head of the present invention, and FIG. 2 is a cross-sectional view showing the manufacturing process of the magnetoresistive head of the present invention. 3 is a sectional view showing another manufacturing process of the magnetoresistive magnetic head of the present invention, and FIG. 4 is a perspective view schematically showing a conventional magnetoresistive magnetic head. 'f) + concave (me)
Claims (1)
果素子と、該磁気抵抗効果素子に電流を流して同時にそ
の両端の電圧を読み取るため磁気抵抗効果素子に接続さ
れた２本の導体部と、上記磁気抵抗効果素子に接続した
２本の導体部の間隔をトラック部とし、さらに上記磁気
抵抗効果素子を磁気的にシールドするための一対の磁気
シールド部材と、該シールド部材と上記磁気抵抗効果素
子の間の絶縁層を有する磁気抵抗効果型ヘッドにおいて
、少なくともトラック部における絶縁層の厚さと、トラ
ック部以外の部分における絶縁層の厚さが異なることを
特徴とする磁気抵抗効果型ヘッド。 ２、請求項１記載の磁気抵抗効果型ヘッドにおいて、導
体部が形成されている部分の磁気シールド部材の間隔は
トラック部における磁気シールド部材の間隔よりも広い
ことを特徴とする磁気抵抗効果型ヘッド。 ３、請求項１または２記載の磁気抵抗効果型ヘッドにお
いて、その両側に薄膜あるいはバルクの磁気シールド部
材を設置したことを特徴とする磁気抵抗効果型ヘッド。 ４、請求項１〜３のうちいずれかに記載の磁気抵抗効果
型ヘッドにおいて、バイアス印加手段としてシャント膜
や電流線あるいは永久磁石などを１つあるいは２つ以上
を組合せて用いたことを特徴とする磁気抵抗効果型ヘッ
ド。 ５、磁気抵抗効果膜と、該磁気抵抗効果膜に電流を流す
為に上記磁気抵抗効果膜に接続された一対の導体部と、
上記磁気抵抗効果膜の上下に設けられたシールド層と、
該シールド層と上記磁気抵抗効果膜の間に設けられた絶
縁体層を有し、上記一対の導体部の間隔を磁気記録媒体
からの磁束信号を検出するトラック部とした磁気抵抗効
果型ヘッドにおいて、上記トラック部における絶縁体膜
の厚さと、トラック部以外の絶縁体膜の厚さが異なる磁
気抵抗効果型ヘッド。 ６、磁気抵抗効果膜と、該磁気抵抗効果膜に電流を流す
為に上記磁気抵抗効果膜に接続された一対の導体部と、
上記磁気抵抗効果膜の上下に設けられたシールド層と、
該シールド層と上記磁気抵抗効果膜の間に設けられた絶
縁体層を有し、上記一対の導体部の間隔を磁気記録媒体
からの磁束信号を検出するトラック部とした磁気抵抗効
果型ヘッドにおいて、上記絶縁体層の厚さが不均一な磁
気抵抗効果型ヘッド。 ７、磁気抵抗効果膜と、該磁気抵抗効果膜に電流を流す
為に上記磁気抵抗効果膜に接続された一対の導体部と、
上記磁気抵抗効果膜の上下に設けられたシールド層と、
該シールド層と上記磁気抵抗効果膜の間に設けられた絶
縁体層を有し、上記一対の導体部の間隔を磁気記録媒体
からの磁束信号を検出するトラック部とした磁気抵抗効
果型ヘッドにおいて、上記トラック部以外の部分で上記
シールド層と絶縁体層が平行となっている磁気抵抗効果
型ヘッド。 ８、磁気抵抗効果膜と、該磁気抵抗効果膜に電流を流す
為に上記磁気抵抗効果膜に接続された一対の導体部と、
上記磁気抵抗効果膜の上下に設けられたシールド層と、
該シールド層と上記磁気抵抗効果膜の間に設けられた絶
縁体層を有し、上記一対の導体部の間隔を磁気記録媒体
からの磁束信号を検出するトラック部とした磁気抵抗効
果型ヘッドの製造方法において、絶縁物をマスクを用い
て複数回積層することによって上記絶縁体膜を形成し、
上記絶縁体膜の厚さを場所によって異ならせる磁気抵抗
効果型ヘッドの製造方法。 ９、磁気抵抗効果膜と、該磁気抵抗効果膜に電流を流す
為に上記磁気抵抗効果膜に接続された一対の導体部と、
上記磁気抵抗効果膜の上下に設けられたシールド層と、
該シールド層と上記磁気抵抗効果膜の間に設けられた絶
縁体層を有し、上記一対の導体部の間隔を磁気記録媒体
からの磁束信号を検出するトラック部とした磁気抵抗効
果型ヘッドの製造方法において、上記磁気抵抗効果膜の
上に絶縁物を表面が平坦になるように堆積した後、少な
くともトラック部の一部の上記絶縁物に溝を設け、その
上に上記シールド層を形成する磁気抵抗効果型ヘッドの
製造方法。[Claims] 1. A magnetoresistive element for detecting a magnetic flux signal from a magnetic recording medium, and a magnetoresistive element connected to the magnetoresistive element in order to flow a current through the magnetoresistive element and simultaneously read the voltage at both ends thereof. The distance between the two conductor parts and the two conductor parts connected to the magnetoresistive element is defined as a track part, and further a pair of magnetic shield members for magnetically shielding the magnetoresistive element, and the shield. A magnetoresistive head having an insulating layer between a member and the magnetoresistive element, characterized in that the thickness of the insulating layer at least in the track portion is different from the thickness of the insulating layer in a portion other than the track portion. Resistance effect head. 2. The magnetoresistive head according to claim 1, wherein the distance between the magnetic shield members in the portion where the conductor portion is formed is wider than the distance between the magnetic shield members in the track portion. . 3. A magnetoresistive head according to claim 1 or 2, characterized in that thin film or bulk magnetic shielding members are provided on both sides of the magnetoresistive head. 4. The magnetoresistive head according to any one of claims 1 to 3, characterized in that one or a combination of a shunt film, a current line, a permanent magnet, or the like is used as the bias applying means. Magnetoresistive head. 5. a magnetoresistive film; a pair of conductor portions connected to the magnetoresistive film to allow current to flow through the magnetoresistive film;
A shield layer provided above and below the magnetoresistive film;
A magnetoresistive head including an insulating layer provided between the shield layer and the magnetoresistive film, the distance between the pair of conductor portions being a track portion for detecting a magnetic flux signal from a magnetic recording medium. . A magnetoresistive head in which the thickness of the insulating film in the track portion is different from the thickness of the insulating film other than the track portion. 6. a magnetoresistive film; a pair of conductor portions connected to the magnetoresistive film to allow current to flow through the magnetoresistive film;
A shield layer provided above and below the magnetoresistive film;
A magnetoresistive head including an insulating layer provided between the shield layer and the magnetoresistive film, the distance between the pair of conductor portions being a track portion for detecting a magnetic flux signal from a magnetic recording medium. , a magnetoresistive head in which the thickness of the insulating layer is non-uniform. 7. a magnetoresistive film; a pair of conductor portions connected to the magnetoresistive film to allow current to flow through the magnetoresistive film;
A shield layer provided above and below the magnetoresistive film;
A magnetoresistive head including an insulating layer provided between the shield layer and the magnetoresistive film, the distance between the pair of conductor portions being a track portion for detecting a magnetic flux signal from a magnetic recording medium. . A magnetoresistive head, wherein the shield layer and the insulator layer are parallel to each other in a portion other than the track portion. 8. a magnetoresistive film; a pair of conductor portions connected to the magnetoresistive film to allow current to flow through the magnetoresistive film;
A shield layer provided above and below the magnetoresistive film;
A magnetoresistive head comprising an insulating layer provided between the shield layer and the magnetoresistive film, the distance between the pair of conductor parts being a track part for detecting a magnetic flux signal from a magnetic recording medium. In the manufacturing method, the insulator film is formed by laminating the insulator multiple times using a mask,
A method of manufacturing a magnetoresistive head in which the thickness of the insulating film is varied depending on the location. 9. a magnetoresistive film; a pair of conductor portions connected to the magnetoresistive film to allow current to flow through the magnetoresistive film;
A shield layer provided above and below the magnetoresistive film;
A magnetoresistive head comprising an insulating layer provided between the shield layer and the magnetoresistive film, the distance between the pair of conductor parts being a track part for detecting a magnetic flux signal from a magnetic recording medium. In the manufacturing method, after depositing an insulator on the magnetoresistive film so that the surface thereof is flat, a groove is provided in the insulator in at least a part of the track portion, and the shield layer is formed thereon. A method for manufacturing a magnetoresistive head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24234490A JPH04123307A (en) | 1990-09-14 | 1990-09-14 | Magneto-resistance effect type head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24234490A JPH04123307A (en) | 1990-09-14 | 1990-09-14 | Magneto-resistance effect type head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04123307A true JPH04123307A (en) | 1992-04-23 |
Family
ID=17087804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24234490A Pending JPH04123307A (en) | 1990-09-14 | 1990-09-14 | Magneto-resistance effect type head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04123307A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5701221A (en) * | 1994-04-06 | 1997-12-23 | Hitachi, Ltd. | Magnetoresistive thin-film magnetic head and method of fabrication thereof |
| US5792546A (en) * | 1993-11-22 | 1998-08-11 | Fujitsu Limited | Magneto-resistive head and method of producing the same |
-
1990
- 1990-09-14 JP JP24234490A patent/JPH04123307A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5792546A (en) * | 1993-11-22 | 1998-08-11 | Fujitsu Limited | Magneto-resistive head and method of producing the same |
| US5701221A (en) * | 1994-04-06 | 1997-12-23 | Hitachi, Ltd. | Magnetoresistive thin-film magnetic head and method of fabrication thereof |
| US5897969A (en) * | 1994-04-06 | 1999-04-27 | Hitachi, Ltd. | Method of fabricating a magnetoresistive thin-film magnetic head |
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