JPH04120275A - Microwave plasma device - Google Patents
Microwave plasma deviceInfo
- Publication number
- JPH04120275A JPH04120275A JP2209321A JP20932190A JPH04120275A JP H04120275 A JPH04120275 A JP H04120275A JP 2209321 A JP2209321 A JP 2209321A JP 20932190 A JP20932190 A JP 20932190A JP H04120275 A JPH04120275 A JP H04120275A
- Authority
- JP
- Japan
- Prior art keywords
- applicator
- plasma
- magnet
- substrate
- microwaves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 14
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 abstract description 9
- 230000005684 electric field Effects 0.000 abstract description 3
- 230000003993 interaction Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 241001448862 Croton Species 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野〕
本発明は、真空容器を共用したアプリケータ内にマイク
ロ波が投入され、ガスと反応して非平衡プラズマ（′＠
子サすクロトン共鳴プラズマ；ＥＣＲプラズマ）が発生
し、該プラズマの雰囲気中もしくは近傍に配置した基板
に対し、表面の改質、エツチング、デポジション等を行
うマイクロ波プラズマ装置に関する。Detailed Description of the Invention (Industrial Field of Application) The present invention is characterized in that microwaves are injected into an applicator that shares a vacuum container, and react with a gas to produce non-equilibrium plasma ('@
The present invention relates to a microwave plasma apparatus that generates croton resonance plasma (ECR plasma) and performs surface modification, etching, deposition, etc. on a substrate placed in or near the atmosphere of the plasma.
第２図は従来のこの種のマイクロ波プラズマ装置の一例
の構造を示す。FIG. 2 shows the structure of an example of a conventional microwave plasma device of this type.
図において１は導入管、２はマイクロ波導入窓、４は円
筒共振器形アプリケータ、５ａは電磁石、７はプラズマ
、８は基板、９は基板台である。In the figure, 1 is an introduction tube, 2 is a microwave introduction window, 4 is a cylindrical resonator type applicator, 5a is an electromagnet, 7 is a plasma, 8 is a substrate, and 9 is a substrate stand.
円筒共振器形アプリケータ４内を１０−７〜１Ｏ−８Ｔ
ｏｒｒ程度に排気し、反応ガスを導入し、圧力を１０−
’Ｔｏｒｒ程度に調整した後、マイクロ波を投入し、磁
界との相互作用により、円筒共振器形アプリケータ４内
にプラズマ７を発生させる。10-7 to 1O-8T inside the cylindrical resonator applicator 4
Evacuate to about
After adjusting the temperature to approximately 'Torr, microwaves are applied, and plasma 7 is generated within the cylindrical resonator applicator 4 due to interaction with the magnetic field.
発生したプラズマ７を発散磁界により基板台９上に載置
した基板８の方へ引き出し、基板８表面に照射し、反応
ガスを選択することにより、基板８表面にエツチング、
デポジション等の各種処理を行う。The generated plasma 7 is drawn toward the substrate 8 placed on the substrate table 9 by a divergent magnetic field, irradiated onto the surface of the substrate 8, and by selecting a reactive gas, the surface of the substrate 8 is etched.
Performs various processing such as deposition.
従来の上記のような構造のマイクロ波プラズマ構造であ
るため、プラズマ状態が変化した場合、マイクロ波との
整合がずれるという問題点があった。Since the conventional microwave plasma structure has the above-described structure, there is a problem in that when the plasma state changes, the matching with the microwave is shifted.
本発明は上記の問題点を解消するためになされたもので
、マイクロ波とプラズマの整合状態を常に最良の状態に
維持できるものを提供することを目的とする。The present invention has been made to solve the above problems, and an object of the present invention is to provide an apparatus that can always maintain the best matching state between microwaves and plasma.
（課題を解決するための手段〕
本発明のマイクロ波プラズマ装置は、真空容器を共有す
る円筒共振器形アプリケータ内に可変短絡器を設けると
ともに、該アプリケータを取り囲むように可動構造の磁
石を配置し、反応ガスの違いやプラズマ状態の違いによ
り整合のずれが生じた場合、可変短絡器および可動磁石
の位置を調整することにより、常に最適な整合状態を維
持できる構造としたものである。(Means for Solving the Problems) The microwave plasma device of the present invention includes a variable short circuit in a cylindrical resonator type applicator that shares a vacuum container, and a movable magnet that surrounds the applicator. The structure is such that when misalignment occurs due to differences in reactant gas or plasma state, the optimal alignment can be maintained at all times by adjusting the positions of the variable short circuit and movable magnet.
第１図は本発明の一実施例の構造を示す。 FIG. 1 shows the structure of one embodiment of the present invention.
図において１．２，４，７，８．９は第２図の同一符号
と同一または相当するものを示し、３は移動装置、１３
はガス導入部である。In the figure, 1.2, 4, 7, 8.9 are the same as or equivalent to the same reference numerals in FIG. 2, 3 is a moving device, 13
is the gas introduction part.
円筒共振器形アプリケータ４内を１０−７〜１０−”Ｔ
ｏｒｒ程度に排気し、ガス導入部１３より反応ガスを導
入し、圧力を１０−’Ｔｏｒｒ程度に調整し、次に、磁
石５を磁石移動装置６により円筒共振器形アプリケータ
４内の高電界発生位置に移動させる。10-7 to 10-”T inside the cylindrical resonator applicator 4
The reactant gas is introduced from the gas introduction part 13 and the pressure is adjusted to about 10-' Torr. Next, the magnet 5 is moved by the magnet moving device 6 to the high electric field inside the cylindrical resonator applicator 4. Move to the location where it occurred.
マイクロ波発振器より放射されたマイクロ波を導波管ｌ
、マイクロ波導入窓２を経て円筒共振器形アプリケータ
４に導入し、磁石５による磁界との相互作用によりプラ
ズマを発生させる。The microwaves emitted from the microwave oscillator are passed through the waveguide l.
, is introduced into a cylindrical resonator applicator 4 through a microwave introduction window 2, and plasma is generated by interaction with a magnetic field from a magnet 5.
この時、プラズマとマイクロ波の整合状態が最適になる
ように可変短絡器１０、磁石５の位置を調整する（具体
的には、システムに組込まれたマイクロ波電力計の反射
電力の値が最小になるように、各々の位置を決定する。At this time, the positions of the variable short circuit 10 and the magnet 5 are adjusted so that the matching state between the plasma and the microwave is optimal (specifically, the value of the reflected power of the microwave power meter built into the system is the minimum Determine each position so that
）。).
第１図では、プラズマ７は基板８より離れているが、基
板８近傍にプラズマを発生させたい時は、基板８近傍の
高電界発生位置に磁石５を配置することにより、実現で
きる。In FIG. 1, the plasma 7 is located away from the substrate 8, but if it is desired to generate plasma near the substrate 8, this can be achieved by placing the magnet 5 at a high electric field generation position near the substrate 8.
以上のように、円筒共振器形アプリケータ４内部に可変
短絡器１０を設け、外部に該アプリケータ４を取り囲み
可動構造に磁石５を配置することにより、常に最適な整
合状態を実現でき、さらに、プラズマの発生位置を自由
に選択することができる。As described above, by providing the variable short circuit 10 inside the cylindrical resonator type applicator 4 and arranging the magnet 5 outside in a movable structure surrounding the applicator 4, it is possible to always achieve an optimal alignment state. , the plasma generation position can be freely selected.
以上説明したように、本発明によれば、プラズマ状態の
違いによるマイクロ波の整合のずれに対し、容易に最適
な整合状態に調整することができるとともに、アプリケ
ータの円筒軸方向のプラズマの発生位置を制御すること
ができる。As explained above, according to the present invention, it is possible to easily adjust to the optimum matching state in response to mismatching of microwaves due to differences in plasma state, and to generate plasma in the cylindrical axis direction of the applicator. The position can be controlled.
第１図は本発明の一実施例の構造を示す説明図、第２図
は従来のこの種のマイクロ波プラズマ装置の一例の構造
を示す説明図である。
入
１・・・導横管、２・・・マイクロ波導入窓、３・・・
０リング、４・・・円筒共振器形アプリケータ、５・・
・磁石、６・・・磁石移動装置、７・・・プラズマ、８
・・・基板、９・・・基板台、１０・・・可変短絡器、
１１・・・ベローズ、１２・・・可変短絡器移動装置、
１３・・・ガス導入部、なお図中において同一符号は同
一または相当するものを示す。FIG. 1 is an explanatory diagram showing the structure of an embodiment of the present invention, and FIG. 2 is an explanatory diagram showing the structure of an example of a conventional microwave plasma apparatus of this type. Inlet 1...Transverse guiding pipe, 2...Microwave introduction window, 3...
0 ring, 4...Cylindrical resonator type applicator, 5...
・Magnet, 6... Magnet moving device, 7... Plasma, 8
... Board, 9... Board stand, 10... Variable short circuit,
11... Bellows, 12... Variable short circuit moving device,
13...Gas introduction part, and the same reference numerals in the drawings indicate the same or equivalent parts.
Claims (1)
入され、ガスと反応してプラズマが発生し、該プラズマ
の雰囲気中もしくは近傍に配置した基板表面の改質、エ
ッチング、デポジション等を行うマイクロ波プラズマ装
置において、 真空容器を共用し、可変短絡器を有する円筒共振器形ア
プリケータと、該アプリケータを取り囲むように配置さ
れた可動構造の磁石を備えたことを特徴とするマイクロ
波プラズマ装置。[Claims] Microwaves are injected into an applicator that shares a vacuum container, and react with gas to generate plasma, which can modify, etch, or deform the surface of a substrate placed in or near the plasma atmosphere. A microwave plasma device for performing positioning, etc., which shares a vacuum container and is characterized by being equipped with a cylindrical resonator type applicator having a variable short circuit, and a movable magnet arranged to surround the applicator. microwave plasma equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2209321A JPH04120275A (en) | 1990-08-09 | 1990-08-09 | Microwave plasma device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2209321A JPH04120275A (en) | 1990-08-09 | 1990-08-09 | Microwave plasma device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04120275A true JPH04120275A (en) | 1992-04-21 |
Family
ID=16571016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2209321A Pending JPH04120275A (en) | 1990-08-09 | 1990-08-09 | Microwave plasma device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04120275A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH059742A (en) * | 1991-07-01 | 1993-01-19 | Nippon Telegr & Teleph Corp <Ntt> | Plasma treating device and constituting method |
-
1990
- 1990-08-09 JP JP2209321A patent/JPH04120275A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH059742A (en) * | 1991-07-01 | 1993-01-19 | Nippon Telegr & Teleph Corp <Ntt> | Plasma treating device and constituting method |
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