JPH04118833A - High voltage processing method for cathode-ray tube - Google Patents

High voltage processing method for cathode-ray tube

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Publication number
JPH04118833A
JPH04118833A JP23770590A JP23770590A JPH04118833A JP H04118833 A JPH04118833 A JP H04118833A JP 23770590 A JP23770590 A JP 23770590A JP 23770590 A JP23770590 A JP 23770590A JP H04118833 A JPH04118833 A JP H04118833A
Authority
JP
Japan
Prior art keywords
electrode
high voltage
projections
voltage
quasi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23770590A
Other languages
Japanese (ja)
Inventor
Wataru Imanishi
今西 渉
Tetsuo Matsuo
松尾 哲夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP23770590A priority Critical patent/JPH04118833A/en
Publication of JPH04118833A publication Critical patent/JPH04118833A/en
Pending legal-status Critical Current

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  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)

Abstract

PURPOSE:To effectively remove burr-like projections by causing electrical discharge to occur between the burr-like projections at the peripheral portions of a hole in a low-voltage electrode and a quasi-electrode inserted into a hole portion of an electrode applied with a positive high voltage, through application of a high voltage between the quasielectrode and the low-voltage electrode. CONSTITUTION:The vacuum vessel 33 is evacuated to a substantially wholly vacuum state. Thereafter, a high voltage of 40KV or so and an earth voltage are applied to a quasi-electrode 34 and a second grid member 15, respectively. At this time, since a high electric field is applied to burr-like projections 31 at the peripheral portion of a hole 28 of the second grid member 15, the field emission from the burr-like projections 31 collides against a distal end of the quasi-electrode 34 to cause the gaseous material adsorbed on the surface thereof to give forth or to cause metal vapor to generate from the quasi-electrode 34. Resultantly, electric discharge takes place in the vicinity of the projections 31 to effectively remove these projections 31. Then, an electron gun is taken out from the vacuum vessel 33 and, at the same time, the quasi-electrode 34 is drawn off. By sealing the electron gun into a glass bulb of a cathode-ray tube, assembling thereof is completed.

Description

【発明の詳細な説明】[Detailed description of the invention]

[産業上の利用分野l この発明は、たとえばカラー陰極線管の耐電圧特性を改
良するために適用される陰極線管の高電圧処理方法に関
するものである。 [従来の技術] 第2図はカラー陰極線管の一般的な構成を示す一部切欠
き側面図であり、同図において、(4)はガラスバルブ
で、パネル部(1)、ファンネル部(2)およびネック
部(3)とからなり、その内外面には内部導電膜(5)
および外部導電膜(6)が設けられている。F配向部導
電1ll(51はネック部(3)の内面まて延出されて
いるとともに、ファンネル(2)の一部に絶縁被膜(7
)により覆われて設けられた陽極端子(8)に電気的に
接続されている。 (9)は上記ネック部(3)に収納された電子銃である
。 第3図は上記ネック部(3)付近の拡大縦断面図であり
、上記電子銃(9)は、陽極(1))、W5格子(12
)、第4格子(+31.第3格子(14)、第2格子(
15)、第1格子(16)およびカソード(17)の各
電極を一体に保持するビードガラス(18)とカップ状
体(19)とバルブスペーサ(20)とを具備している
。上記陽極(It)とI!4格子(13)とは、コネク
タ(21A3で接続され、陽極端子(8)、内部導電膜
(51tl+よびバルブスペーサ(20)を通じて外部
より高圧が印加される。 また、第5格子(12)と第3格子(14)とはコネク
タ(2−1’ll )で接続され、ステム(23)に植
立させたリード#I(24^)を通じて外部より副高圧
が印加される。さらに、第2格子(15)、第1格子(
I6)およびカソード(17)は別のコネクタ12]C
1で接続され、ステム(23)に植立させたリード線(
24B)を通じて外部よりそれぞれ電圧が印加される。 マルチステップフォーカス電子銃の動作電圧は、第3格
子(14)が9KV、第2格子(15)が数+00Vで
あるから、第2格子(15)と第3格子(14)との間
には従来のパイポテンシャル電子銃の2倍近い電圧が印
加される。 第4図は第3格子(I4)、第2格子(+5)iSよび
第1格子
[Industrial Field of Application 1] This invention relates to a high voltage treatment method for cathode ray tubes, which is applied, for example, to improve the withstand voltage characteristics of color cathode ray tubes. [Prior Art] Fig. 2 is a partially cutaway side view showing the general configuration of a color cathode ray tube. ) and a neck part (3), with an internal conductive film (5) on its inner and outer surfaces.
and an external conductive film (6). The F-oriented conductive part 1ll (51 extends to the inner surface of the neck part (3), and an insulating coating (7) is provided on a part of the funnel (2).
) is electrically connected to an anode terminal (8) provided covered by. (9) is an electron gun housed in the neck part (3). FIG. 3 is an enlarged longitudinal sectional view of the vicinity of the neck portion (3), and the electron gun (9) includes an anode (1)), a W5 grating (12
), 4th lattice (+31. 3rd lattice (14), 2nd lattice (
15), a bead glass (18), a cup-shaped body (19), and a bulb spacer (20) that hold the first grid (16) and cathode (17) electrodes together. The above anode (It) and I! The fourth grid (13) is connected to the connector (21A3), and high pressure is applied from the outside through the anode terminal (8), the internal conductive film (51tl+) and the valve spacer (20). It is connected to the third lattice (14) through a connector (2-1'll), and an auxiliary high voltage is applied from the outside through the lead #I (24^) planted on the stem (23). lattice (15), first lattice (
I6) and cathode (17) are separate connectors 12]C
1 and the lead wire (
24B), a voltage is applied from the outside. The operating voltage of the multi-step focusing electron gun is 9 KV for the third grating (14) and several +00 V for the second grating (15), so there is a voltage between the second grating (15) and the third grating (14). A voltage nearly twice that of a conventional pi-potential electron gun is applied. Figure 4 shows the third grating (I4), the second grating (+5) iS, and the first grating.

【16)付近の拡大図で、第1格子(16)の
3つの穴(27)にそれぞれ対向する個所に、R,G、
Bのカソード(17)が配置され、これらカソード(1
7)の先端にはカソードコーティング(25)が施され
ているとともに、内部にはヒータ(26)が配置されて
いる。 (28)および(29)は上記第2格子(15
)および第3格子(14)にそれぞれ上記第1格子(1
6)の穴(27)に対応させて形成された穴である。 ところで1.F記カラー陰極線管において、第2格子(
15)の穴128)はプレス金型により打抜き形成され
ているので、その穴(28)の周辺に第5図に示すよう
に、パリ状の突起(31)ができる、このパリ状突起(
31)を、たとえば薬品を使って研磨したとしても、電
子銃の組立時に治具等によって傷をつけられ、その傷に
よる微小突起(31)が存在することが多い。さらに、
陰極線管の製造工程におけるエージングなどによりカソ
ードコーティング(25)から蒸発したB a O(3
0)が上記突起(31)および穴(28)の周面に付着
する。 上記第2格子(I5)、第3格子(14)の間には電子
銃の動作中に上記したように9KV近くの電圧が印加さ
れるので、第2格子(15)の穴(28)周辺のパリ状
突起(3I)の先端からフィールドエミッション(32
)が発生する。このフィールドエミッションは、Fow
ler−Nordheimの関係式により、突起(31
)の先端の形状によって決まる電界倍増系数βと、その
表面の仕事函数中で決定され、βが大きくなるほど、ま
た中が小さくなるほど大きなフィールドエミッション(
32)が放出される。 このようなフィールドエミッション(32)を取り除く
ために、従来ではステム(23)を高絶縁の液体や気体
中に入れ、リード線(24A)から第3格子(14)に
たとえば40KV程度の高電圧を印加して、高電圧処理
をおこなっていた。この場合、第3格子(14)の穴(
291は第2格子(151の穴(28)より相当に大き
いので、第2格子(15)の穴(28)の周辺のパリ状
突起(31)からでたフィールドエミッション(32)
は第5図のように、第3格子(14)の穴(29)を通
過して、第3格子(14)の側面に衝突するため、電気
学会論文誌A、昭55−9、鶴田浩−著、「陰極加熱お
よび陽極加熱説による真空放電開始シュミレーション」
の中で記載されている陽極加熱説によって、パリ状突起
(31)附近で放電を起こすことができず、したがって
高電圧処理をおこなっても有効にパリ状突起(31)を
取り除くことができない。 【発明が解決しようとする課題1 以上のような従来の陰極線管の高電圧処理方法によれば
、第2格子(15)の周辺のパリ状突起(3])および
その表面に付着したBaOを取り除くために、第2格子
(15)と第3格子(14)との間に高電圧を印加した
とき、第3格子c14)の穴(29)の径が第2格子(
15)の穴(28)の径より大きいために、第2格子(
15)の穴(28)の周辺のパリ状突起(31)から放
出されたフィールドエミッション(32)が第3格子(
14)に衝突せず、したがって、強制放電を起こすこと
ができないで、パリ状突起(31)を有効に取り除くこ
とができないという問題があった。 この発明は上記のような問題点を解消するためになされ
たもので、正の高電圧が印加される電極の穴周辺に存在
するパリ状突起を有効に取り除くことができる陰極線管
の高電圧処理方法を提供することを目的とする。 「課題を解決するための手段J この発明に係る陰極線管の高電圧処理方法は、陰極線管
に封入する前の電子銃の陽極部がら正の高電圧が印加さ
れる電極の穴部に疑似電極を挿入して、この疑似電極を
低電圧の印加される電極に接近させたのち、電子銃を真
空状態として、疑似電極と低電圧電極との間に高電圧を
印加することを特徴とする。 〔作用] この発明によれば、正の高電圧が印加される電極の穴部
に挿入した疑似電極と低電圧電極との間に高電圧を印加
することにより、低電圧電極の穴周辺のパリ状突起と疑
似電極との間で放電を起こして、パリ状突起が有効に取
り除かれる。 【発明の実施例】 以下、この発明の一実施例を図面にもとづいて説明する
。なお、この実施例が対象とするカラー陰極線管の構成
は第2図ないし第4図に示すものと同一であるため、説
明を省略する。 第1図はこの発明の一実施例による陰極線管の高電圧処
理方法を示す要部の拡大縦断面図であり、同図において
、(33)は陰極線管へ封入する前の電子銃を収容する
真空容器、 (15)は第2格子、(14)は第3格子
、 (31)は第2格子(15)の穴(28)の周辺に
存在するパリ状突起、(34)は、第3格子(14)の
穴(29)から挿入してその先端を第2格子(15)に
接近させた疑似電極である。 上記の準備工程ののちに、上記真空容器(33)内の空
気を排気してほぼ真空状態としたのち、製似電極(34
)に40KV程度の高電圧を、また、第2格子(15)
にアース電圧を印加する。このとき、第2格子(15)
の穴(28)周辺のパリ状突起(31)には高電界が印
加されるので、このパリ状突起(31)から放出したフ
ィールドエミッションは、疑似電極(34)の先端部に
衝突し、その表面に吸着されたガス、さらには、疑似電
極(34)から金属蒸気が発生し、既述した陽極加熱段
により、パリ状突起(31)附近で放電が起り、これに
よりパリ状突起(31)を有効に取り除くことができる
。また、上記疑似電極(34)は、第2格子(15)に
相当に近づけることができる。たとえば、第3格子(1
4)と第2格子(15)との間隔の1/4に近づけるこ
とができる。これにより、高電圧としての印加電圧を1
0KVとしても、従来の40KVの場合とほぼ同等な働
きをさせることができる。したがって、小型軽量の電源
を用いての高電圧処理可能となり、安全上も有利になる
。 上記の処理工程のあと、真空容器(33)から電子銃を
取り出すとともに、疑似電極(34)を抜き取り、その
後は、従来の工程どおり、電子銃を陰極線管のガラスバ
ルブ(4)に封入することで、陰極線管を所定どおりに
完成する。 なお、上記疑似電極(34)の材料としては、アルミな
どのやわらかい材料の方が、低い印加電圧で放電させる
ことができて、−層有利である。 また、上記の実施例では、第2格子(15)と第3格子
(14)との高電圧処理について説明したが、第3格子
(14)と第4格子(13)との間でもよく、正の高電
圧が印加される電極の穴径がそれよりも低い電圧が印加
される穴径より大きい場合に対して適用することができ
る。 また、上記実施例では、電子銃1本の高電圧処理につい
て説明したが、同時に複数本、たとえば50〜lOO本
の処理をおこなうことも可能で、この場合は作業性を非
常に高くすることができる。 また、上記実施例では、マルチステップフォーカスの電
子銃について説明したが、これ以外の電子銃に対しても
適用できる。
[16] In the enlarged view of the vicinity, R, G,
B cathodes (17) are arranged and these cathodes (1
7) has a cathode coating (25) applied to its tip, and a heater (26) is arranged inside. (28) and (29) are the second lattice (15)
) and the third grating (14), respectively.
This hole is formed to correspond to the hole (27) in 6). By the way, 1. In the F color cathode ray tube, the second grating (
Since the hole 128) of 15) is formed by punching with a press die, a pars-like protrusion (31) is formed around the hole (28) as shown in FIG.
Even if 31) is polished using a chemical, for example, it is often scratched by a jig or the like during assembly of the electron gun, and microprotrusions (31) are often present due to the scratches. moreover,
B a O (3
0) adheres to the circumferential surfaces of the protrusion (31) and hole (28). As mentioned above, a voltage of nearly 9 KV is applied between the second grid (I5) and the third grid (14) during operation of the electron gun, so around the hole (28) of the second grid (15). Field emission (32
) occurs. This field emission is
According to the ler-Nordheim relation, the protrusion (31
) is determined by the electric field multiplication coefficient β, which is determined by the shape of the tip of the tip, and the work function of its surface.
32) is released. In order to eliminate such field emissions (32), conventionally the stem (23) is placed in a highly insulating liquid or gas, and a high voltage of about 40 KV is applied from the lead wire (24A) to the third grid (14). high voltage processing was performed. In this case, the hole (
Since 291 is considerably larger than the hole (28) in the second grid (151), the field emission (32) from the paris-like protrusion (31) around the hole (28) in the second grid (15).
passes through the hole (29) of the third grid (14) and collides with the side of the third grid (14), as shown in Figure 5. -Author, "Vacuum discharge initiation simulation using cathode heating and anode heating theory"
According to the anodic heating theory described in , it is not possible to cause discharge in the vicinity of the Paris-like protrusion (31), and therefore, even if high voltage treatment is performed, the Paris-like protrusion (31) cannot be effectively removed. Problem to be Solved by the Invention 1 According to the conventional high-voltage treatment method for cathode ray tubes as described above, it is possible to remove BaO attached to the Paris-like protrusions (3) around the second grating (15) and the surface thereof. When a high voltage is applied between the second grating (15) and the third grating (14) in order to remove the
15), the diameter of the hole (28) in the second lattice (
The field emission (32) emitted from the paris-shaped protrusion (31) around the hole (28) in the third grid (15)
14), therefore, a forced discharge cannot be caused, and the parry-like protrusion (31) cannot be effectively removed. This invention was made to solve the above-mentioned problems, and it is a high-voltage treatment for cathode ray tubes that can effectively remove the pars-like protrusions that exist around the holes in the electrodes to which high positive voltage is applied. The purpose is to provide a method. ``Means for Solving the Problems J'' A method for high voltage treatment of a cathode ray tube according to the present invention provides a pseudo electrode in a hole of an electrode to which a positive high voltage is applied from an anode part of an electron gun before being sealed in a cathode ray tube. is inserted and the pseudo electrode is brought close to an electrode to which a low voltage is applied, and then a high voltage is applied between the pseudo electrode and the low voltage electrode with the electron gun in a vacuum state. [Function] According to the present invention, by applying a high voltage between the low voltage electrode and the pseudo electrode inserted into the hole of the electrode to which a positive high voltage is applied, the area around the hole of the low voltage electrode is reduced. A discharge is generated between the protrusion and the pseudo electrode, and the pariform protrusion is effectively removed. [Embodiment of the Invention] An embodiment of the present invention will be described below based on the drawings.This embodiment The structure of the color cathode ray tube to which this invention is applied is the same as that shown in Figs. 2 to 4, so a description thereof will be omitted. Fig. 1 shows a high voltage processing method for a cathode ray tube according to an embodiment of the present invention. 2 is an enlarged vertical cross-sectional view of the main parts shown in FIG. (31) is a pariform protrusion existing around the hole (28) of the second lattice (15), and (34) is inserted through the hole (29) of the third lattice (14) and its tip is inserted into the second lattice. (15). After the above preparation process, the air in the vacuum container (33) is evacuated to create an almost vacuum state, and then the manufactured electrode (34) is
), apply a high voltage of about 40KV to the second grid (15).
Apply earth voltage to. At this time, the second grid (15)
Since a high electric field is applied to the Paris-like protrusion (31) around the hole (28), the field emission emitted from the Paris-like protrusion (31) collides with the tip of the pseudo electrode (34), and its Gas adsorbed on the surface and furthermore, metal vapor is generated from the pseudo electrode (34), and due to the anode heating stage described above, a discharge occurs near the Paris-like protrusion (31), which causes the Paris-like protrusion (31) to can be effectively removed. Moreover, the pseudo electrode (34) can be placed quite close to the second grating (15). For example, the third lattice (1
4) and the second grating (15). This allows the applied voltage as a high voltage to be reduced to 1
Even at 0KV, it is possible to perform almost the same function as the conventional 40KV. Therefore, it becomes possible to process high voltage using a small and lightweight power supply, which is also advantageous in terms of safety. After the above processing steps, the electron gun is taken out from the vacuum container (33) and the pseudo electrode (34) is extracted, and then the electron gun is sealed in the glass bulb (4) of the cathode ray tube as in the conventional process. Then, the cathode ray tube is completed as specified. Note that, as the material for the pseudo electrode (34), a soft material such as aluminum is more advantageous than a soft material because it can cause discharge at a low applied voltage. Further, in the above embodiment, high voltage treatment was explained between the second grating (15) and the third grating (14), but the high voltage treatment may also be performed between the third grating (14) and the fourth grating (13). This can be applied to cases where the hole diameter of the electrode to which a positive high voltage is applied is larger than the hole diameter to which a lower voltage is applied. Further, in the above embodiment, high voltage processing of one electron gun was explained, but it is also possible to process multiple electron guns at the same time, for example, 50 to 100 electron guns, and in this case, workability can be extremely high. can. Further, in the above embodiment, a multi-step focus electron gun has been described, but the present invention can also be applied to other electron guns.

【発明の効果】【Effect of the invention】

以上のように、この発明によれば、正の高電圧が印加さ
れる電極の穴径が、低電圧が印加される穴径より大きな
電子銃に対して、低電圧が印加される電極の穴周辺に存
在する突起と疑似電極との間で確実に放電を起こして、
そのパリ状突起を有効に取り除くことができ、したがっ
て、信頼性の高い陰極線管を得ることができる。
As described above, according to the present invention, for an electron gun, the hole diameter of the electrode to which a positive high voltage is applied is larger than the hole diameter to which a low voltage is applied. By reliably causing a discharge between the protrusions and pseudo electrodes that exist in the periphery,
The pariform projections can be effectively removed, and a highly reliable cathode ray tube can therefore be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例による陰極線管の高電圧処
理方法を、示す要部の拡大縦断面図、第2図は陰極線管
の一般的な構成を示す一部切欠き側面図、第3図は陰極
線管のネック附近の拡大縦断面図、第4図はその第2格
子附近の拡大図、第5図は従来の陰極線管の高電圧処理
方法を示す縦断面図である。 (9)・・・電子銃、(14)・・・第3格子、(15
)・・・第2格子、 +31)・・・第2格子穴周辺に
存在するパリ状突起、  +32)−・・フィールドエ
ミッション、(33)・・・真空容器、+341−・・
疑似電極。 なお、図中の同一符号は同一または相当部分を示す。
FIG. 1 is an enlarged vertical sectional view of the main parts showing a high voltage processing method for a cathode ray tube according to an embodiment of the present invention, FIG. 2 is a partially cutaway side view showing the general configuration of a cathode ray tube, FIG. 3 is an enlarged vertical cross-sectional view of the vicinity of the neck of the cathode ray tube, FIG. 4 is an enlarged view of the vicinity of the second grid, and FIG. 5 is a vertical cross-sectional view showing a conventional high voltage processing method for the cathode ray tube. (9)...Electron gun, (14)...Third grating, (15
)...Second grid, +31)...Parid-like projections existing around the second grid holes, +32)-...Field emission, (33)...Vacuum vessel, +341-...
Pseudo electrode. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] (1)陰極線管に封入する前の電子銃の陽極部から正の
高電圧が印加される電極の穴部へ疑似電極を挿入してこ
れを低電圧の印加される電極に接近させる工程と、この
疑似電極を含む電子銃を真空状態とする工程と、上記疑
似電極と低電圧電極との間に高電圧を印加する工程とか
らなることを特徴とする陰極線管の高電圧処理方法。
(1) A step of inserting a pseudo electrode into the hole of the electrode to which a high positive voltage is applied from the anode part of the electron gun before being sealed in the cathode ray tube and bringing it close to the electrode to which a low voltage is applied; A method for high voltage processing of a cathode ray tube, comprising the steps of: placing an electron gun including the pseudo electrode in a vacuum state; and applying a high voltage between the pseudo electrode and the low voltage electrode.
JP23770590A 1990-09-06 1990-09-06 High voltage processing method for cathode-ray tube Pending JPH04118833A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23770590A JPH04118833A (en) 1990-09-06 1990-09-06 High voltage processing method for cathode-ray tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23770590A JPH04118833A (en) 1990-09-06 1990-09-06 High voltage processing method for cathode-ray tube

Publications (1)

Publication Number Publication Date
JPH04118833A true JPH04118833A (en) 1992-04-20

Family

ID=17019290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23770590A Pending JPH04118833A (en) 1990-09-06 1990-09-06 High voltage processing method for cathode-ray tube

Country Status (1)

Country Link
JP (1) JPH04118833A (en)

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