JPH0411773A - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPH0411773A JPH0411773A JP2114504A JP11450490A JPH0411773A JP H0411773 A JPH0411773 A JP H0411773A JP 2114504 A JP2114504 A JP 2114504A JP 11450490 A JP11450490 A JP 11450490A JP H0411773 A JPH0411773 A JP H0411773A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- opening
- recess
- front surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 abstract description 46
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 239000012790 adhesive layer Substances 0.000 abstract description 2
- 238000001579 optical reflectometry Methods 0.000 abstract 2
- 239000007769 metal material Substances 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- KXJGSNRAQWDDJT-UHFFFAOYSA-N 1-acetyl-5-bromo-2h-indol-3-one Chemical compound BrC1=CC=C2N(C(=O)C)CC(=O)C2=C1 KXJGSNRAQWDDJT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はファクシミリ、ハンディコピー等に使用される
イメージセンサに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an image sensor used in facsimiles, handy copies, and the like.
〔従来の技術］
一般に、ファクシミリやハンディコピー等は紙面に表現
した文字２図形等の被検出物を電子化された情報に置き
換えるためのイメージセンサを備えており、電子化され
た情報を印刷、電送等の種々の処理を行って使用目的を
達成している。このようなイメージセンサは蛍光管と受
光素子とを有し、蛍光管からの光線を被検出物に照射し
、その反射光の強弱あるいは有無を受光素子で感知して
電子化し、順次被検出物の検出位置を変えることによっ
て被検出物全体のイメージを電子化情報化するものであ
る。[Prior Art] In general, facsimile machines, handy copiers, etc. are equipped with an image sensor to replace objects to be detected, such as letters, figures, etc. expressed on paper, with electronic information. Various processes such as electrical transmission are performed to achieve the purpose of use. Such an image sensor has a fluorescent tube and a light-receiving element.The light beam from the fluorescent tube is irradiated onto the object to be detected, and the light-receiving element senses the intensity or presence of the reflected light and converts it into electronic data. By changing the detection position of the object, the image of the entire object to be detected is converted into electronic information.
上記従来技術においては、イメージセンサの光源として
蛍光管を用いているため、ファクシミリやハンディコピ
ー等の機器の小型化、軽量化の要求に対応できないとい
う問題があり、これを解決するために光源として小型化
された発光ダイオードを用いた場合には光強度が低下し
てしまい受光素子による感知特性が低下するという問題
があった。In the above conventional technology, since a fluorescent tube is used as the light source of the image sensor, there is a problem that it cannot meet the demands for miniaturization and weight reduction of equipment such as facsimiles and handy copies. When a miniaturized light emitting diode is used, there is a problem in that the light intensity decreases and the sensing characteristics of the light receiving element deteriorates.
そこで本発明は小型化を可能にしたイメージセンサを提
供することを目的とする。Therefore, an object of the present invention is to provide an image sensor that can be miniaturized.
本発明のイメージセンサは、基板の片面に凹所を形成し
、この凹所内にこの幅方向に向かって少なくとも透光層
と、左右対向電極と、この電極間に配置する発光層とを
並列的に配設し、前記基板の片面に前記透光層に対応し
た開口部を有する光反射層を形成し、前記開口部に対応
して受光素子を設けたものである。In the image sensor of the present invention, a recess is formed on one side of a substrate, and in the recess, at least a light-transmitting layer, left and right opposing electrodes, and a light-emitting layer disposed between the electrodes are arranged in parallel in the width direction of the recess. A light reflecting layer having an opening corresponding to the light transmitting layer is formed on one side of the substrate, and a light receiving element is provided corresponding to the opening.
上記構成によって、電圧印加された対向電極間の発光層
が発光し、この発光光線が基板後方の被検出物に照射し
、この反射光線が透光層を透過することにより開口部を
通して受光素子に感知される。With the above configuration, the light-emitting layer between the opposing electrodes to which a voltage is applied emits light, the emitted light rays illuminate the object to be detected behind the substrate, and the reflected light passes through the light-transmitting layer and reaches the light-receiving element through the opening. be sensed.
〔実施例］
以下、本発明の一実施例を添付図面を参照して説明する
。[Example] Hereinafter, an example of the present invention will be described with reference to the accompanying drawings.
第１図に示すように、ガラス等の透明絶縁基板１の前面
に切削加工またはエツチング処理等の手段により凹所２
を形成し、この凹所２内にこの幅方向に向かって、透明
樹脂フィルムまたは透明ガラス等からなる透光層３と、
この透光層３を中心としてその両側面に形成されたアル
ミ等の光反射性を有する金属導電性薄膜からなる電極４
と、各電極４の側面に形成された発光層５と、各発光層
５の側面に形成された絶縁層６と、各絶縁層６の側面に
形成された光反射性を有する金属導電性薄膜からなる電
極７とを並列的に配設し、前記透明絶縁基板１の前面に
透明シリコーン樹脂等の接着材料からなる透光性接着層
８を形成するとともに、この接着層８により各層３．５
．６および電極４゜７からなる発光部９を前記凹所２内
に接着封止し、前記透光性接着層８の前面にアルミ等の
光反射性を有する金属材料からなる光反射層１０を前記
透光層３に対応する開口部１１を有するようにして蒸着
等の手段により形成し、この光反射層１０の前面にガラ
ス等の透明板１２を接着し、この透明板１２の前面に前
記開口部１１に対応して受光素子１３を形成してなるも
のである。この場合、絶縁層６は省略してもよく、また
透明板１２は透明樹脂等により形成してもよく、開口部
１１にも透明板１２の一部を配設するようにしてもよい
。As shown in FIG. 1, a recess 2 is formed on the front surface of a transparent insulating substrate 1 made of glass or the like by cutting or etching.
A light-transmitting layer 3 made of a transparent resin film, transparent glass, etc. is formed in the recess 2 in the width direction, and
Electrodes 4 made of a light-reflective metal conductive thin film such as aluminum formed on both sides of the light-transmitting layer 3.
, a light-emitting layer 5 formed on the side surface of each electrode 4, an insulating layer 6 formed on the side surface of each light-emitting layer 5, and a metal conductive thin film having light reflective properties formed on the side surface of each insulating layer 6. A transparent adhesive layer 8 made of an adhesive material such as a transparent silicone resin is formed on the front surface of the transparent insulating substrate 1.
．． A light emitting section 9 consisting of a light emitting section 6 and an electrode 4.degree. A transparent plate 12 such as glass is adhered to the front surface of the light-reflecting layer 10 so as to have an opening 11 corresponding to the light-transmitting layer 3 . A light receiving element 13 is formed corresponding to the opening 11. In this case, the insulating layer 6 may be omitted, the transparent plate 12 may be formed of transparent resin, etc., and a portion of the transparent plate 12 may also be provided in the opening 11.
製造に際しては、透光層３を中心として電極４゜７は蒸
着するとともに発光層５および絶縁層６はドクターブレ
ード法等の手段で塗布することにより積層形成され、こ
のように形成された発光部９を凹所２内に配置して接着
封止するものである。During manufacture, the electrodes 4.7 are deposited around the light-transmitting layer 3, and the light-emitting layer 5 and the insulating layer 6 are layered by coating by means such as a doctor blade method. 9 is placed in the recess 2 and sealed with adhesive.
前記絶縁層６はシアノエチルセルローズ等の高誘電率誘
電体物質からなる有機バインダにチタン酸バリウム粉末
等の高誘電率誘電体物質を混合させたものからなり、ま
た、発光層５はシアノエチルセルローズ等の高誘電率誘
電体物質からなる有機バインダにＳｎｓ ： Ｃｅ系、
ＣａＳ：Ｅｕ系等の蛍光体物質粉末を分散させたものか
らなる。前記受光素子１３は透明板１２上にＩＴＯある
いはＳｎＯ□等の透明導電材料による電極１４が蒸着、
スパッタ等により形成され、この電極１４上にアモルフ
ァスシリコン層からなる光電変換膜１５がプラズマＣＶ
Ｄ法により形成され、この光電変換膜１５上にＣｒ （
クロム）や八ｉ（アルミ）等の金属導電材料による電極
１６が蒸着。The insulating layer 6 is made of a mixture of an organic binder made of a high permittivity dielectric material such as cyanoethyl cellulose and a high permittivity dielectric material such as barium titanate powder, and the light emitting layer 5 is made of a high permittivity dielectric material such as barium titanate powder. Sns: Ce-based, organic binder made of high-permittivity dielectric material,
CaS: Consists of dispersed Eu-based phosphor material powder. The light receiving element 13 has an electrode 14 made of a transparent conductive material such as ITO or SnO□ deposited on a transparent plate 12.
A photoelectric conversion film 15 made of an amorphous silicon layer is formed on this electrode 14 by sputtering, etc.
It is formed by the D method, and Cr (
An electrode 16 made of a metal conductive material such as chrome) or aluminum (aluminum) is deposited.
スパッタ等により形成されるものである。It is formed by sputtering or the like.
そして、対向電極４．７間に電圧を印加することにより
画電極４，７間の発光層５の蛍光体物質粉末が励起され
て発光し、この発光光線Ａが前面側の光反射層１０に反
射して分散が防止されながら後方の紙等の被検出物Ｂに
照射され、その反射光線Ｃが透光層３．透明板１２を透
過し受光素子１３に入射して被検出物Ｂの当該位置の反
射状況つまり図形や文字等の構成が電気信号に変換され
る。このようにして被検出物Ｂの光反射位置を移動する
ことにより被検出物Ｂの全体のイメージが電子情報化す
るものである。By applying a voltage between the opposing electrodes 4 and 7, the phosphor material powder in the light emitting layer 5 between the picture electrodes 4 and 7 is excited and emits light, and this emitted light ray A is directed to the light reflecting layer 10 on the front side. The reflected light beam C is irradiated onto the object B to be detected such as paper at the rear while being reflected and prevented from dispersing. The light passes through the transparent plate 12 and enters the light-receiving element 13, and the reflection state of the detected object B at the relevant position, that is, the configuration of figures, characters, etc., is converted into an electrical signal. By moving the light reflection position of the object B in this manner, the entire image of the object B is converted into electronic information.
このように上記実施例においては、対向電極４゜７間の
発光層７の発光光線Ａを透明絶縁基板１を通して被検出
物Ｂに照射し、その反射光線Ｃを開口部１１を通して受
光素子１３に入射させるものであるため、薄肉で小型化
された光源を備えたイメージセンサとなり、ファクシミ
リやハンディコピー等の機器の小型化、軽量化を図るこ
とができる。In the above embodiment, the emitted light beam A of the light emitting layer 7 between the opposing electrodes 4°7 is irradiated onto the object B through the transparent insulating substrate 1, and the reflected light beam C is directed to the light receiving element 13 through the opening 11. Since the light is incident on the image sensor, it becomes an image sensor equipped with a thin and compact light source, and it is possible to reduce the size and weight of devices such as facsimiles and handy copies.
また、発光層７の発光光線Ａを分散を防止しながら被検
出物Ｂに向かって放射できるため光強度が高められ受光
素子１３による惑知を良好に行うことができる。Further, since the emitted light beam A of the light emitting layer 7 can be emitted toward the object B while preventing dispersion, the light intensity can be increased and the light receiving element 13 can be used to better sense the light.
なお本発明は上記実施例に限定されるものではなく本発
明の要旨の範囲内において種々の変形実施が可能である
。例えば発光層、絶縁層、あるいは受光素子を形成する
材料は適宜選定すればよい。Note that the present invention is not limited to the above-mentioned embodiments, and various modifications can be made within the scope of the gist of the present invention. For example, materials for forming the light-emitting layer, the insulating layer, or the light-receiving element may be selected as appropriate.
また凹所の深さ寸法や各層の厚み等は任意に選定すれば
よい。Further, the depth of the recess, the thickness of each layer, etc. may be arbitrarily selected.
本発明は、基板の片面に凹所を形成し、この凹所内にこ
の幅方向に向かって少なくとも透光層と、左右対向電極
と、この電極間に配置する発光層とを並列的に配設し、
前記基板の片面に前記透光層に対応した開口部を有する
光反射層を形成し、前記開口部に対応して受光素子を設
けたことにより、小型化を可能にしたイメージセンサを
提供できる。In the present invention, a recess is formed on one side of a substrate, and at least a light-transmitting layer, left and right opposing electrodes, and a light-emitting layer disposed between the electrodes are arranged in parallel in the recess in the width direction. death,
By forming a light-reflecting layer having an opening corresponding to the light-transmitting layer on one side of the substrate and providing a light-receiving element corresponding to the opening, it is possible to provide an image sensor that can be miniaturized.
第１図は本発明の一実施例を示す断面図である。 １−透明絶縁基板（基板） ２−凹所 ３−・・透光層 ７−電極 発光層 光反射層 受光素子 特許出願人 日本精機株式会社 FIG. 1 is a sectional view showing one embodiment of the present invention. 1-Transparent insulating substrate (substrate) 2-Recess 3-...Transparent layer 7-electrode light emitting layer light reflective layer Light receiving element Patent applicant: Nippon Seiki Co., Ltd.
Claims (1)
方向に向かって少なくとも透光層と、左右対向電極と、
この電極間に配置する発光層とを並列的に配設し、前記
基板の片面に前記透光層に対応した開口部を有する光反
射層を形成し、前記開口部に対応して受光素子を設けた
ことを特徴とするイメージセンサ。(1) A recess is formed on one side of the substrate, and in the recess, at least a light-transmitting layer and left and right opposing electrodes are formed in the width direction of the recess.
A light-emitting layer disposed between the electrodes is arranged in parallel, a light-reflecting layer having an opening corresponding to the light-transmitting layer is formed on one side of the substrate, and a light-receiving element is arranged corresponding to the opening. An image sensor characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2114504A JPH0411773A (en) | 1990-04-28 | 1990-04-28 | Image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2114504A JPH0411773A (en) | 1990-04-28 | 1990-04-28 | Image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0411773A true JPH0411773A (en) | 1992-01-16 |
Family
ID=14639411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2114504A Pending JPH0411773A (en) | 1990-04-28 | 1990-04-28 | Image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0411773A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10240350B2 (en) | 2013-12-03 | 2019-03-26 | National Institute Of Advanced Industrial Science And Technology | Free access floor structure, and manufacturing apparatus and carrier apparatus adapted for floor structure |
-
1990
- 1990-04-28 JP JP2114504A patent/JPH0411773A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10240350B2 (en) | 2013-12-03 | 2019-03-26 | National Institute Of Advanced Industrial Science And Technology | Free access floor structure, and manufacturing apparatus and carrier apparatus adapted for floor structure |
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