JPH04116656A - Photomask and its production - Google Patents
Photomask and its productionInfo
- Publication number
- JPH04116656A JPH04116656A JP2237580A JP23758090A JPH04116656A JP H04116656 A JPH04116656 A JP H04116656A JP 2237580 A JP2237580 A JP 2237580A JP 23758090 A JP23758090 A JP 23758090A JP H04116656 A JPH04116656 A JP H04116656A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film layer
- transparent substrate
- photomask
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010409 thin film Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims description 43
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 23
- 239000011651 chromium Substances 0.000 claims description 15
- 229910052804 chromium Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 abstract description 37
- 238000000034 method Methods 0.000 abstract description 12
- 230000007547 defect Effects 0.000 abstract description 9
- 239000002356 single layer Substances 0.000 abstract description 7
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 7
- 229910000423 chromium oxide Inorganic materials 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 6
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体素子、ＩＣ，ＬＳＩ等の製造に用いら
れるフォトマスク及びその製造方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photomask used for manufacturing semiconductor devices, ICs, LSIs, etc., and a method for manufacturing the same.
第３図は例えば特開昭６３−５２１４１号公報に示され
た従来のフォトマスクを示す断面図であり、図において
、１は酸化クロム膜、２はクロム膜、３は透明基板であ
る。FIG. 3 is a sectional view showing a conventional photomask disclosed in, for example, Japanese Patent Application Laid-Open No. 63-52141. In the figure, 1 is a chromium oxide film, 2 is a chromium film, and 3 is a transparent substrate.
ＬＳＩの様に微細な回路パターンを精度良く半導体等の
ウェハ上に焼き付けるために原版として用いられるフォ
トマスクとしては、耐久性にすぐれたハードマスクであ
るクロムマスク、片面低反射クロムマスク（第３図（ｂ
））、両面低反射クロムマスク（第３図（ａ））金属シ
リサイドマスク等がある。Photomasks used as original plates to print fine circuit patterns such as LSI onto semiconductor wafers with high precision include chrome masks, which are hard masks with excellent durability, and single-sided low-reflection chrome masks (see Figure 3). (b
)), double-sided low-reflection chrome mask (Fig. 3(a)), metal silicide mask, etc.
一般に、解像力にすぐれたハードマスクが高憤夏用とし
て用いられるが、この中で単層のクロムマスクは表面反
射率が高いため、転写用の光源波長が短波長になればな
る程、マスク、ウェハ間で多重反射を生じ易い。これを
防ぐために、表面に酸化クロムからなる反射防止層を設
けた片面低反射クロムマスクが、そして、オートマスク
アライナ−の作動のためには裏面にも反射防止層を設け
た両面低反射クロムマスクが多層構造マスクとして用い
られている。しかしながら、これらの多層構造マスクは
、単層のクロムマスクに比較して、マスクのパターン形
成時に、パターン寸法精度や耐久性にすぐれたものを作
成することが難しい。Generally, hard masks with excellent resolution are used for high-temperature summers, but among these, single-layer chrome masks have high surface reflectance, so the shorter the light source wavelength for transfer, the harder the mask becomes. Multiple reflections are likely to occur between wafers. To prevent this, we use a single-sided low-reflection chrome mask with an anti-reflection layer made of chromium oxide on the front surface, and a double-sided low-reflection chrome mask with an anti-reflection layer on the back side for automatic mask aligner operation. is used as a multilayer mask. However, compared to single-layer chrome masks, it is difficult to create these multilayer masks with excellent pattern dimensional accuracy and durability during mask pattern formation.
それは具体的には、多層構造の遮光膜を電子線リソグラ
フィ・プロセスによりエツチングしてパターン化する際
に、クロム膜とその上面又は下面に集積された酸化クロ
ム膜とのエツチング速度が異なることに起因するもので
ある。通常の場合、酸化クロム膜のエツチング速度がク
ロム膜に比較して数倍遅い。このため、二層構造の片面
反射クロムマスク及び三層構造の両面低反射クロムマス
クの場合、第３図（ａ）、（ｂ）に示す様に、最上部又
は最下部の酸化クロム膜１より、下層又は中間層のクロ
ム膜２の方かエツチング速度か早いため、クロム膜２の
アンダーカット量か大きくなり、両層間の断面形状に段
差を発生し、ひさしを形成してしまう。一方、エツチン
グ速度か膜の途中で大きく変化するため、膜全体か不均
一にエツチングされ易くなり、パターンのシャープさが
損われ、虫くい状のエツジが生じたり、厚さ数十ｎｍの
ひさしかパターンエツジにつき出しているため非常にも
ろく、かけ易く欠陥になりやすい。Specifically, this is due to the difference in the etching rate between the chromium film and the chromium oxide film accumulated on the top or bottom surface of the chromium film when etching and patterning a multilayered light shielding film using an electron beam lithography process. It is something to do. Normally, the etching rate of a chromium oxide film is several times slower than that of a chromium film. For this reason, in the case of a two-layer structured single-sided reflective chrome mask and a three-layer structured double-sided low-reflective chrome mask, as shown in FIGS. Since the etching speed of the lower or intermediate chromium film 2 is faster, the undercut amount of the chromium film 2 becomes larger, creating a step in the cross-sectional shape between the two layers and forming an eaves. On the other hand, since the etching speed changes greatly during the film, the entire film is likely to be etched unevenly, resulting in loss of sharpness of the pattern, the formation of insect-like edges, and the formation of patterns with only a few tens of nanometers of thickness. Because the edges stick out, it is extremely brittle, easily chipped, and prone to defects.
従来のフォトマスクは以上のように構成されているので
、酸化クロム膜の膜組成を酸化窒化クロム（Ｃｒ、Ｎア
Ｏｊ）にして、クロム膜とエツチング速度を一致させる
様にｘ、 ｙ、 ｚ値を選択したターゲットか必要
であり、また、エツチング方法で酸化クロム膜とクロム
膜とのエツチング条件を変えるなどの複雑な手順か必要
であるなとの問題点があった。Since the conventional photomask is constructed as described above, the film composition of the chromium oxide film is chromium oxynitride (Cr, NaOj), and x, y, z are set so that the etching rate matches that of the chromium film. There were problems in that it required a target with a selected value, and it required a complicated procedure such as changing the etching conditions for the chromium oxide film and the chromium film in the etching method.
この発明は、上記のような問題点を解消するためになさ
れたもので、パターン形成時に単層をパターン化するだ
けで最終的に片面低反射マスク又は両面低反射マスクと
なるフォトマスクを得ることを目的とする。This invention was made to solve the above-mentioned problems, and it is possible to obtain a photomask that ultimately becomes a single-sided low-reflection mask or a double-sided low-reflection mask by simply patterning a single layer during pattern formation. With the goal.
この発明に係るフォトマスクは、透明基板上または該透
明基板上全面に形成された第１の薄膜層上にパターニン
グされた第２の薄膜層と、上記透明基板の上記第２の薄
膜層が形成された面全面に成膜された第３の薄膜層とを
備えたものである。The photomask according to the present invention includes a second thin film layer patterned on a transparent substrate or a first thin film layer formed on the entire surface of the transparent substrate, and the second thin film layer of the transparent substrate. and a third thin film layer formed on the entire surface.
またこの発明に係るフォトマスクの製造方法は、透明基
板上または該透明基板上全面に形成された第１の薄膜上
に第２の薄膜層を成膜し、該第２の薄膜層をパターン化
した後、エツチングし、検査修正し、上記透明基板上の
上記第２の薄膜層が形成された面全面に第３の薄膜層を
成膜するようにしたものである。Further, the method for manufacturing a photomask according to the present invention includes forming a second thin film layer on a transparent substrate or a first thin film formed on the entire surface of the transparent substrate, and patterning the second thin film layer. After that, it is etched, inspected and corrected, and a third thin film layer is formed on the entire surface of the transparent substrate on which the second thin film layer is formed.
本発明におけるフォトマスクは、透明基板上または該透
明基板上全面に形成された第１の薄膜層上にパターニン
グされた第２の薄膜層と、上記透明基板の上記第２の薄
膜層が形成された面全面に成膜された第３の薄膜層とを
備えた構成としたから、パターニングされているのが単
一の層であるためエツチング速度の違いによる欠陥を抑
え、両面または片面低反射のフォトマスクの精度を向上
できる。The photomask of the present invention includes a second thin film layer patterned on a transparent substrate or a first thin film layer formed on the entire surface of the transparent substrate, and the second thin film layer of the transparent substrate. Since the structure includes a third thin film layer formed on the entire surface of the etching surface, since only a single layer is patterned, defects due to differences in etching speed can be suppressed, and low reflection on both or one side can be achieved. The accuracy of photomasks can be improved.
また本発明によるフォトマスクの製造方法おいては、透
明基板上または該透明基板上全面に形成された第１の薄
膜上に第２の薄膜層を成膜し、該第２の薄膜層をパター
ン化した後、エツチングし、検査修正し、上記透明基板
上の上記第２の薄膜層が形成された面全面に第３の薄膜
層を成膜するようにしたから、複雑な手順を用いること
なく簡単な製造方法で、精度の高いフォトマスクを形成
できる。Further, in the method for manufacturing a photomask according to the present invention, a second thin film layer is formed on the transparent substrate or the first thin film formed on the entire surface of the transparent substrate, and the second thin film layer is patterned. After forming the film, it is etched, inspected and corrected, and the third thin film layer is deposited on the entire surface of the transparent substrate on which the second thin film layer has been formed, so there is no need to use complicated procedures. A highly accurate photomask can be formed using a simple manufacturing method.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例によるフォトマスクを示す部
分断面側面図であり、図において、３は合成石英などの
透明基板、５はシリコン酸化膜、２はクロム膜又は金属
シリサイド膜であり、シリコン酸化膜５の上に成膜する
。４は全面に成膜したフッ素樹脂膜である。FIG. 1 is a partial cross-sectional side view showing a photomask according to an embodiment of the present invention. In the figure, 3 is a transparent substrate such as synthetic quartz, 5 is a silicon oxide film, and 2 is a chromium film or metal silicide film. , is formed on the silicon oxide film 5. 4 is a fluororesin film formed on the entire surface.
次にこの発明の一実施例におけるフォトマスクの製造方
法を第２図について説明する。Next, a method for manufacturing a photomask according to an embodiment of the present invention will be explained with reference to FIG.
図において、十分に良く研磨、洗浄された合成石英等の
透明なガラス基板３上にスパッタ成膜法でシリコン酸化
膜５を約２０ｎｍの厚みに形成し、次に真空を保った状
態でクロム膜又は金属シリサイド膜２をスパッタ成膜法
て約８０ｎｍ〜１１００ｎの厚みに形成する（第２図（
ａ））。つぎに、その上に電子線（ＥＢ）レジストを塗
布して約５００ｎｍの膜厚６を形成し、ＥＢ描画装置で
所望のＬＳＩパターンを露光した後現像する（第２図（
ｂ））。クロム膜又は金属シリサイド膜２を塩素系のハ
ロゲンガス等で圧力２５０ｍＴｏｒｒ、０．１５ｗ／ｄ
、の条件で平行平板型（カソード方式）プラズマエツチ
ング装置でエツチングを行う。（第２図（Ｃ））この時
下地のシリコン酸化膜は、はとんどエツチングされない
。エツチングが完了した後、ＥＢレジストを酸素（０２
）プラズマにて全面除去した後、洗浄により異物を取り
除いてから、検査を行ない、欠陥があればその修正をレ
ーザーや集束イオンビームで行う（第２図（ｄ））。修
正が完了した後、洗浄し、ＨＭＤＳ （ヘキサメチルジ
シラザン）等で表面処理し、全面にフッ素樹脂、例えば
、サイトツブ（旭硝子社製）を厚さ約２０ｒｕｎに形成
できる様にスピンコーティングして、窒素雰囲気中で２
００°Ｃで１時間ベークする（第２図（ｅ））その後、
再検査を行なって欠陥がないことを確認する。もし欠陥
かあれば、サイトツブを酸素（０２）プラズマで全面除
去してから、第２図（ｄ）と第２図（ｅ）の工程を再度
行なう。このサイトツブは、酸、アルカリの薬品に強く
、通常の洗浄に対しても十分な耐性を有する。In the figure, a silicon oxide film 5 is formed to a thickness of about 20 nm by sputtering on a transparent glass substrate 3 made of synthetic quartz or the like that has been thoroughly polished and cleaned, and then a chromium film is formed while maintaining a vacuum. Alternatively, a metal silicide film 2 is formed to a thickness of approximately 80 nm to 1100 nm using a sputtering film forming method (see FIG. 2).
a)). Next, an electron beam (EB) resist is applied thereon to form a film thickness 6 of approximately 500 nm, and a desired LSI pattern is exposed using an EB drawing device and then developed (see Fig. 2).
b)). The chromium film or metal silicide film 2 is heated with chlorine-based halogen gas, etc. at a pressure of 250 mTorr and 0.15 w/d.
Etching is performed using a parallel plate type (cathode type) plasma etching apparatus under the following conditions. (FIG. 2(C)) At this time, the underlying silicon oxide film is hardly etched. After etching is completed, the EB resist is exposed to oxygen (02
) After the entire surface is removed using plasma, the foreign matter is removed by cleaning, and then inspected, and if any defects are found, they are corrected using a laser or focused ion beam (Figure 2 (d)). After the correction is completed, it is cleaned, the surface is treated with HMDS (hexamethyldisilazane), etc., and a fluororesin such as Cytotube (manufactured by Asahi Glass Co., Ltd.) is spin-coated on the entire surface to a thickness of about 20 runs. 2 in nitrogen atmosphere
Bake at 00°C for 1 hour (Fig. 2(e)), then
Re-inspect to ensure there are no defects. If there are any defects, the site lumps are completely removed using oxygen (02) plasma, and the steps shown in FIG. 2(d) and FIG. 2(e) are performed again. This cytotube is resistant to acid and alkaline chemicals and has sufficient resistance to ordinary cleaning.
本実施例においては、シリコン酸化膜５は厚さを上述の
ように適切に設定することにより、多重反射を利用した
反射防止膜となる。またフッ素樹脂膜４もは厚さを上述
のように適切に設定することにより、多重反射を利用し
た反射防止膜となる。In this embodiment, the silicon oxide film 5 becomes an antireflection film that utilizes multiple reflections by appropriately setting the thickness as described above. Furthermore, by appropriately setting the thickness of the fluororesin film 4 as described above, it becomes an antireflection film that utilizes multiple reflections.
従って従来のように多層膜を複雑な手順のエツチングで
バターニングすることなくパターン欠陥のない両面低反
射のフォトマスクを得ることかできる。Therefore, a double-sided low-reflection photomask without pattern defects can be obtained without patterning a multilayer film using complicated etching steps as in the prior art.
なお、上記実施例では、第３の薄膜層をフッ素樹脂とし
たが、シリコン酸化膜やダイヤモンド薄膜でも良い。In the above embodiment, the third thin film layer is made of fluororesin, but it may also be a silicon oxide film or a diamond thin film.
また、上記実施例では、第１の薄膜層の上に第２の薄膜
層を形成した構成としたが、第１の薄膜層かない場合で
も、片面低反射マスクとして形成できる。Further, in the above embodiment, the second thin film layer is formed on the first thin film layer, but even if the first thin film layer is not provided, a single-sided low reflection mask can be formed.
以上のように、この発明によれば、透明基板上または該
透明基板上全面に形成された第１の薄膜上にバターニン
グされた第２の薄膜層と、上記透明基板上の上記第２の
薄膜層か形成された面全面に成膜された第３の薄膜層を
備えた構成とし、エツチングは単層に対してのみ行うの
で、エツチング速度の違いによるパターン欠陥が生じず
、単層膜の場合と同様に高精度の両面低反射または片面
低反射のフォトマスクが簡単な工程で形成できる効果か
ある。As described above, according to the present invention, the second thin film layer patterned on the first thin film formed on the transparent substrate or the entire surface of the transparent substrate, and the second thin film layer patterned on the transparent substrate. The configuration includes a third thin film layer formed on the entire surface on which the thin film layer was formed, and etching is performed only on the single layer, so pattern defects due to differences in etching speed do not occur, and the single layer film is etched. As in the case of the present invention, a high-precision photomask with low reflection on both sides or low reflection on one side can be formed in a simple process.
第１図はこの発明の一実施例によるフォトマスクを示す
部分断面側面図、第２図はこの発明のフォトマスクの製
造工程を示す断面側面図、第３図は従来の多層構造フォ
トマスクの部分断面側面図である。
ｌは酸化クロム膜、２はクロム又は金属シリサイド膜、
３は透明基板、４はフッ素樹脂、５はシリコン酸化膜、
６は電子線（ＥＢ）レジスト。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a partial cross-sectional side view showing a photomask according to an embodiment of the present invention, FIG. 2 is a cross-sectional side view showing the manufacturing process of the photomask of the present invention, and FIG. 3 is a portion of a conventional multilayer photomask. FIG. l is a chromium oxide film, 2 is a chromium or metal silicide film,
3 is a transparent substrate, 4 is a fluororesin, 5 is a silicon oxide film,
6 is an electron beam (EB) resist. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (3)
第１の薄膜上にパターニングされた第２の薄膜層と、 上記透明基板上の上記第２の薄膜層が形成された面全面
に成膜された第３の薄膜層とを備えたことを特徴とする
フォトマスク。(1) A second thin film layer patterned on a transparent substrate or a first thin film formed on the entire surface of the transparent substrate, and a second thin film layer patterned on the entire surface of the transparent substrate on which the second thin film layer is formed. A photomask comprising a third thin film layer.
第２の薄膜層はクロムまたは金属シリサイド膜であり、
前記第３の薄膜層はフッ素樹脂であることを特徴とする
請求項１記載のフォトマスク。(2) the first thin film layer is a silicon oxide film, the second thin film layer is a chromium or metal silicide film,
2. The photomask according to claim 1, wherein the third thin film layer is a fluororesin.
第１の薄膜上に第２の薄膜層を成膜する第１の工程と、 該第２の薄膜層をパターン化した後、エッチングし、検
査修正する第２の工程と、 上記透明基板上の上記第２の薄膜層が形成された面全面
に第３の薄膜層を成膜する第３の工程とを含むことを特
徴とするフォトマスクの製造方法。(3) A first step of forming a second thin film layer on the transparent substrate or the first thin film formed on the entire surface of the transparent substrate, and after patterning the second thin film layer, etching. and a third step of forming a third thin film layer on the entire surface of the transparent substrate on which the second thin film layer is formed. Method of manufacturing a photomask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2237580A JPH04116656A (en) | 1990-09-07 | 1990-09-07 | Photomask and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2237580A JPH04116656A (en) | 1990-09-07 | 1990-09-07 | Photomask and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04116656A true JPH04116656A (en) | 1992-04-17 |
Family
ID=17017426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2237580A Pending JPH04116656A (en) | 1990-09-07 | 1990-09-07 | Photomask and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04116656A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5455380A (en) * | 1977-10-12 | 1979-05-02 | Mitsubishi Electric Corp | Defect part correcting method of photo mask |
| JPS56130748A (en) * | 1980-03-17 | 1981-10-13 | Matsushita Electric Ind Co Ltd | Formation of inert protective film |
-
1990
- 1990-09-07 JP JP2237580A patent/JPH04116656A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5455380A (en) * | 1977-10-12 | 1979-05-02 | Mitsubishi Electric Corp | Defect part correcting method of photo mask |
| JPS56130748A (en) * | 1980-03-17 | 1981-10-13 | Matsushita Electric Ind Co Ltd | Formation of inert protective film |
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