JPH04114483A - Forming method of chalcopyrite thin film and thin film solar cell - Google Patents
Forming method of chalcopyrite thin film and thin film solar cellInfo
- Publication number
- JPH04114483A JPH04114483A JP2234284A JP23428490A JPH04114483A JP H04114483 A JPH04114483 A JP H04114483A JP 2234284 A JP2234284 A JP 2234284A JP 23428490 A JP23428490 A JP 23428490A JP H04114483 A JPH04114483 A JP H04114483A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- chalcopyrite
- forming
- elements
- evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052951 chalcopyrite Inorganic materials 0.000 title claims abstract description 64
- 239000010409 thin film Substances 0.000 title claims abstract description 64
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000001704 evaporation Methods 0.000 claims abstract description 30
- 230000008020 evaporation Effects 0.000 claims abstract description 28
- -1 chalcopyrite compound Chemical class 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 10
- 239000000956 alloy Substances 0.000 claims abstract description 10
- 238000007740 vapor deposition Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- NIFIFKQPDTWWGU-UHFFFAOYSA-N pyrite Chemical compound [Fe+2].[S-][S-] NIFIFKQPDTWWGU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052683 pyrite Inorganic materials 0.000 claims description 2
- 239000011028 pyrite Substances 0.000 claims description 2
- 239000006104 solid solution Substances 0.000 claims description 2
- 150000004770 chalcogenides Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 13
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 229910052738 indium Inorganic materials 0.000 abstract description 2
- 229910052798 chalcogen Inorganic materials 0.000 abstract 7
- 150000001787 chalcogens Chemical class 0.000 abstract 7
- 230000002411 adverse Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、カルコパイライト薄膜の形成方法及び薄膜太
陽に間するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for forming chalcopyrite thin films and to thin film solar cells.
従来の技術
従来、カルコパイライト薄膜を非晶質基板あるいは非晶
質薄膜あるいは金属薄膜上に形成する場合は、カルコパ
イライト化合物そのものを蒸発源として蒸着させる真空
蒸着法、カルコパイライト化合物そのものをターゲット
として用いるスパッタリング法、カルコパイライト化合
物の成分元素を別々に蒸着させる多元の真空蒸着法、カ
ルコパイライト化合物の成分元素を別々にターゲットと
して用いるマルチスパッタリング法、あるいは構成要素
金属の積層薄膜、例えばＣｕ−Ｉｎ薄膜のカルコゲナイ
ト化を行う法等の種々の方法によって形成している。Conventional technology Conventionally, when forming a chalcopyrite thin film on an amorphous substrate, an amorphous thin film, or a metal thin film, the vacuum evaporation method uses the chalcopyrite compound itself as an evaporation source, and the chalcopyrite compound itself is used as a target. A sputtering method, a multi-source vacuum evaporation method in which the component elements of the chalcopyrite compound are separately deposited, a multi-sputtering method in which the component elements of the chalcopyrite compound are separately used as targets, or a laminated thin film of component metals, such as a Cu-In thin film. It is formed by various methods such as chalcogenization.
発明が解決しようとする課題
しかし、成分元素の組成制御という点では、前記の従来
方法は、全て不都合が伴う。例えば、カルコパイライト
化合物そのものを蒸発源、あるいはターゲットとして用
いる場合は、カルコゲナイト元素の離脱による組成ずれ
が起こる。成分元素を別々に蒸着、スパッタする場合は
、個々の元素の蒸着速度の厳密な制御が難しいといった
具合である。Problems to be Solved by the Invention However, all of the above-mentioned conventional methods have disadvantages in terms of controlling the composition of component elements. For example, when a chalcopyrite compound itself is used as an evaporation source or target, a composition shift occurs due to the separation of chalcogenite elements. When component elements are deposited and sputtered separately, it is difficult to strictly control the deposition rate of each element.
また、構成要素金属の積層薄膜をカルコゲナイト化する
場合にも、各積層薄膜の量を所望の組成比にすることが
困難である。Furthermore, when forming laminated thin films of component metals into chalcogenite, it is difficult to adjust the amount of each laminated thin film to a desired composition ratio.
このように、従来の方法では、組成を厳密に制御して、
カルコパイライト薄膜の形成を行うことが困難である。In this way, conventional methods strictly control the composition and
It is difficult to form a chalcopyrite thin film.
このために、成分元素の、意図しない化学量論比からの
ずれが生じ、過剰成分の析出、カルコパイライト薄膜以
外の異相化合物の出現等、電気特性に悪影響を与える現
象が生ずる。For this reason, an unintended deviation of the component elements from the stoichiometric ratio occurs, and phenomena that adversely affect the electrical properties occur, such as the precipitation of excessive components and the appearance of different phase compounds other than the chalcopyrite thin film.
また、−船釣に、カルコパイライト薄膜は、成分元素の
組成比を化学量論比からずらすことで、電気的性質、例
えば、導電率、伝導型を制御することができる。しかし
、前記のように、組成制御が困難であるため、例えば、
伝導型の制御では、必要以上に組成比を変えるために、
同じく過剰成分の析出、カルコパイライト薄膜以外の異
相化合物の出現等、電気特性に悪影響を与える現象が生
ずる。このために、太陽電池等のデバイス特性を劣化さ
せていた。In addition, for boat fishing, the electrical properties of the chalcopyrite thin film, such as electrical conductivity and conductivity type, can be controlled by shifting the composition ratio of the component elements from the stoichiometric ratio. However, as mentioned above, it is difficult to control the composition, so for example,
In conduction type control, in order to change the composition ratio more than necessary,
Similarly, phenomena that adversely affect electrical properties occur, such as the precipitation of excessive components and the appearance of different phase compounds other than the chalcopyrite thin film. For this reason, the characteristics of devices such as solar cells have been degraded.
本発明は、このような従来の方法の課題を解決するもの
であって、品質のよいカルコパイライト薄膜の形成方法
及び薄膜太陽を提供することを目的とするものである。The present invention solves the problems of the conventional methods, and aims to provide a method for forming a high-quality chalcopyrite thin film and a thin film solar panel.
課題を解決するための手段
請求項１の本発明は、カルコゲナイト元素を除くカルコ
パイライト化合物の成分元素の化学量論比の合金と、カ
ルコゲナイト元素と、カルコゲナイト元素を除くカルコ
パイライト化合物の成分元素の１つ、あるいは複数の元
素を蒸発源とする、多元蒸着法でカルコパイライト薄膜
を形成することを特徴とするカルコパイライト薄膜の形
成方法である。Means for Solving the Problems The present invention as claimed in claim 1 provides an alloy having a stoichiometric ratio of component elements of a chalcopyrite compound excluding the chalcogenite element, and an alloy having a stoichiometric ratio of the component elements of the chalcopyrite compound excluding the chalcogenite element. This method of forming a chalcopyrite thin film is characterized in that the chalcopyrite thin film is formed by a multi-component evaporation method using one or more elements as evaporation sources.
請求項２の本発明は、請求項１の本発明において、形成
時に基板を加熱する工程を含むことを特徴とするカルコ
パイライト薄膜の形成方法である。The present invention according to claim 2 is a method for forming a chalcopyrite thin film, which is characterized in that the method according to the present invention according to claim 1 includes a step of heating the substrate during formation.
請求項３の本発明は、請求項２の本発明において、形成
時の基板温度を、化学量論比に対して、過剰のカルコゲ
ナイト元素が再蒸発する温度以上の温度とすることを特
徴とするカルコパイライト薄膜の形成方法である。The present invention according to claim 3 is characterized in that, in the present invention according to claim 2, the substrate temperature at the time of formation is set to a temperature higher than the temperature at which excess chalcogenite element reevaporates with respect to the stoichiometric ratio. This is a method for forming a chalcopyrite thin film.
請求項４の本発明は、請求項３の本発明において、蒸着
時に、カルコゲナイト元素を除くカルコパイライト化合
物の成分元素の到達量に対して、カルコゲナイト元素の
基板への到達量を化学量論比以上にすることを特徴とす
るカルコパイライト薄膜の形成方法である。The present invention according to claim 4 is the present invention according to claim 3, in which, during vapor deposition, the amount of the chalcogenite element reaching the substrate is set at a stoichiometric ratio or more with respect to the amount of component elements of the chalcopyrite compound excluding the chalcogenite element. This is a method of forming a chalcopyrite thin film characterized by the following steps.
請求項５の本発明は、請求項２又は４０本発明において
、蒸着時に、蒸着源の１つであるカルコゲナイト元素を
除くカルコパイライト化合物の成分元素の合金を、全て
蒸発させることを特徴とするカルコパイライト薄膜の形
成方法である。The present invention according to claim 5 is the chalcopyrite compound according to claim 2 or 40, characterized in that during vapor deposition, all alloys of component elements of the chalcopyrite compound except for chalcogenite element, which is one of the vapor deposition sources, are evaporated. This is a method for forming a pyrite thin film.
請求項６の本発明は、請求項１〜５のいずれかの本発明
において、蒸着法が抵抗加熱蒸着法であることを特徴と
するカルコパイライト薄膜の形成方法である。A sixth aspect of the present invention is a method for forming a chalcopyrite thin film according to any one of the first to fifth aspects, characterized in that the vapor deposition method is a resistance heating vapor deposition method.
請求項７の本発明は、請求項１〜６のいずれかの本発明
において、カルコパイライト薄膜が、ＣｕＩｎＳｅ２、
ＣｕＩｎＳ２、あるいは、それらの固溶体であること
を特徴するカルコパイライト薄膜の形成方法である。The present invention according to claim 7 is the invention according to any one of claims 1 to 6, wherein the chalcopyrite thin film is CuInSe2, CuInSe2,
This is a method for forming a chalcopyrite thin film characterized by CuInS2 or a solid solution thereof.
請求項８の本発明は、請求項１〜７のいずれかのカルコ
パイライト薄膜の形成方法によって得られたカルコパイ
ライト薄膜を用いることを特徴とする薄膜太陽電池であ
る。The present invention according to claim 8 is a thin film solar cell characterized by using a chalcopyrite thin film obtained by the method for forming a chalcopyrite thin film according to any one of claims 1 to 7.
作用
本発明においては、カルコゲナイト元素を除くカルコパ
イライト化合物の成分元素の１つ、あるいは複数の元素
は、カルコパイライト化合物の成分元素というより、む
しろ、カルコパイライト化合物にドーピングされる不純
物として扱われる。Function In the present invention, one or more of the component elements of the chalcopyrite compound other than the chalcogenite element is treated as an impurity doped into the chalcopyrite compound rather than a component element of the chalcopyrite compound.
このようにして、組成を厳密に制御して、カルコパイラ
イト薄膜の形成を行うことが可能となり、所望の電気特
性を有するカルコパイライト薄膜の形成を行うことがで
き、過剰成分の析出、カルコパイライト薄膜以外の異相
化合物の出現等、電気特性に悪影響を与える現象が起こ
らず、太陽電池等のデバイス特性が改善される。In this way, it is possible to form a chalcopyrite thin film by strictly controlling the composition, and it is possible to form a chalcopyrite thin film with desired electrical properties, preventing the precipitation of excess components and preventing the formation of a chalcopyrite thin film. Phenomena that adversely affect electrical properties, such as the appearance of other out-of-phase compounds, do not occur, and device properties such as solar cells are improved.
実施例
以下、本発明の実施例について図面を参照して説明する
。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例にかかるカルコパイライト薄
膜の形成方法を説明するための模式的断面図である。FIG. 1 is a schematic cross-sectional view for explaining a method of forming a chalcopyrite thin film according to an embodiment of the present invention.
第１図に示すように、内部に、カルコパイライト化合物
Ｃｏ１ｎＳｅ２の成分元素であるＣｕとＩｎの、原子比
が１対１の合金の蒸着Ｒ２と、カルコゲナイト元素であ
るＳｅの蒸発源３と、Ｃｕの蒸発源４の、３元の蒸着源
を備えた真空容器１を用意する。As shown in FIG. 1, inside, an evaporated alloy R2 of Cu and In, which are component elements of the chalcopyrite compound Co1nSe2, in an atomic ratio of 1:1, an evaporation source 3 of Se, which is a chalcogenite element, and a Cu A vacuum vessel 1 equipped with a ternary evaporation source 4 is prepared.
そして、蒸着前に、あらかじめ基板５を４００℃に加熱
しておく。その後、蒸発源２、蒸発源３、蒸発源４て同
時蒸着を行なう。この際、蒸発源２は温度を１３００℃
として、積めた合金が全て蒸発するまで蒸着を行なった
。また、この間、蒸発源３、蒸発源４は、温度をそれぞ
れ３５０℃、１１００℃として、Ｓｅ、Ｃｕの蒸着を続
けた。これらの蒸着条件は、カルコゲナイト元素を除く
カルコパイライト化合物の成分元素の到達量に対して、
カルコゲナイト元素の基板５への到達量が化学量論比以
上になり、基板５上で、化学量論比に対して、過剰のカ
ルコゲナイト元素が再蒸発するように設定した。Then, before vapor deposition, the substrate 5 is heated to 400° C. in advance. Thereafter, simultaneous vapor deposition is performed using evaporation source 2, evaporation source 3, and evaporation source 4. At this time, the evaporation source 2 has a temperature of 1300°C.
The deposition was continued until all of the deposited alloy was evaporated. During this time, the evaporation sources 3 and 4 continued to evaporate Se and Cu at temperatures of 350° C. and 1100° C., respectively. These deposition conditions are based on the amount of component elements of the chalcopyrite compound excluding chalcogenite elements.
The setting was made such that the amount of chalcogenite element reaching the substrate 5 was greater than the stoichiometric ratio, and the chalcogenite element in excess of the stoichiometric ratio was reevaporated on the substrate 5.
表１は上記の方法で形成したＣｕＩｎＳｅ２の組成比並
びに導電率、伝導型である。Table 1 shows the composition ratio, conductivity, and conductivity type of CuInSe2 formed by the above method.
表１
この表から明かなように、形成した膜は、はぼ化学量論
比のＣｕＩｎＳｅ２薄膜であるが、蒸発源４から不純物
として膜に導入した微小量のＣｕのために、低抵抗ｐ型
となフている。Table 1 As is clear from this table, the formed film is a nearly stoichiometric CuInSe2 thin film, but due to the minute amount of Cu introduced into the film as an impurity from the evaporation source 4, it has a low resistance p-type. Tonafutaru.
第２図は上記の形成方法で形成したＣｕＩｎＳｅ２の薄
膜を用いた太陽電池の１例を示す断面図である。第２図
に示したように、金属薄膜６上の所定領域に、本発明の
方法により、組成比が、Ｃｕ／Ｉｎ＞１のｐ型のＣｕＩ
ｎＳｅ２薄膜７を形成する。その上にペテロｐ−ｎ接合
を形成するためにＣｄＳ薄膜８を形成する。その上の所
定領域に、上部電極９を形成する。このようにして、形
成したＣｕＩｎＳｅ２には過剰成分の析出、薄膜以外の
異相化合物の出現等、電気特性に悪影響を与える現象が
ないために、太陽電池の高効率化が図れる。FIG. 2 is a cross-sectional view showing an example of a solar cell using a CuInSe2 thin film formed by the above-described forming method. As shown in FIG. 2, p-type CuI with a composition ratio of Cu/In>1 is applied to a predetermined region on the metal thin film 6 by the method of the present invention.
An nSe2 thin film 7 is formed. A CdS thin film 8 is formed thereon to form a Peter p-n junction. An upper electrode 9 is formed in a predetermined region thereon. In this way, the formed CuInSe2 is free from phenomena that adversely affect electrical properties, such as precipitation of excessive components and appearance of different phase compounds other than thin films, so that higher efficiency of the solar cell can be achieved.
なお、蒸発源４から蒸発させる元素は、Ｃｕに限らず、
カルコゲナイト元素を除くカルコパイライト化合物の成
分元素の１つ、あるいは複数の元素でありさえすればよ
い。Note that the elements to be evaporated from the evaporation source 4 are not limited to Cu;
It only needs to be one or more of the component elements of the chalcopyrite compound other than the chalcogenite element.
発明の詳細
な説明したところから明らかなように、本発明によフて
、組成を厳密に制御して、カルコパイライト薄膜の形成
を行うことが可能となる。As is clear from the detailed description of the invention, the present invention makes it possible to form a chalcopyrite thin film while strictly controlling the composition.
従って、過剰成分の析出、カルコパイライト薄膜以外の
異相化合物の出現等、電気特性に悪影響を与える現象が
起こらないカルコパイライト薄膜を形成できる。Therefore, it is possible to form a chalcopyrite thin film in which phenomena that do not adversely affect electrical properties, such as precipitation of excessive components or appearance of different phase compounds other than the chalcopyrite thin film, occur.
また、このようなカルコパイライト薄膜を用いた薄膜太
陽電池のデバイス特性を改善出来る。Further, the device characteristics of a thin film solar cell using such a chalcopyrite thin film can be improved.
第１図は本発明の一実施例にかかるカルコパイライト薄
膜の形成方法を説明するための模式的断面図、第２図は
同カルコパイライト薄膜を利用した薄膜太陽電池の略示
断面図である。
１・・・真空容器、２・・・ＣｕとＩｎの合金の蒸着源
、３・・・Ｓｅの蒸発源、４・・・Ｃｕの蒸発源、５・
・・基板、６・・・金属薄膜、７・・・組成比がＣｕ／
Ｉｎ＞ １のｐ型のＣｕＩｎＳｅ２薄膜、８−−−Ｃｄ
Ｓ薄膜、９・φ・上部電極。
代理人 弁理士 松 １）正 道
第１図
１・・・真空容器
２・・・Ｃｕ／ｌｎ＝１の合金の蒸発源３・・・Ｓｅの
蒸発源
４・・・Ｃｕの蒸発源
５・・・基板FIG. 1 is a schematic cross-sectional view for explaining a method of forming a chalcopyrite thin film according to an embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view of a thin-film solar cell using the same chalcopyrite thin film. DESCRIPTION OF SYMBOLS 1... Vacuum container, 2... Cu and In alloy evaporation source, 3... Se evaporation source, 4... Cu evaporation source, 5...
... Substrate, 6... Metal thin film, 7... Composition ratio is Cu/
p-type CuInSe2 thin film with In > 1, 8---Cd
S thin film, 9 φ upper electrode. Agent Patent Attorney Matsu 1) Tadashi Michi Figure 1 1...Vacuum container 2...Evaporation source of Cu/ln=1 alloy 3...Evaporation source of Se 4...Evaporation source of Cu 5. ··substrate
Claims (8)
物の成分元素の化学量論比の合金と、カルコゲナイト元
素と、カルコゲナイト元素を除くカルコパイライト化合
物の成分元素の１つ、あるいは複数の元素を蒸発源とす
る、多元蒸着法でカルコパイライト薄膜を形成すること
を特徴とするカルコパイライト薄膜の形成方法。(1) Using an alloy in a stoichiometric ratio of the component elements of the chalcopyrite compound excluding the chalcogenite element, the chalcogenite element, and one or more elements of the component elements of the chalcopyrite compound excluding the chalcogenite element as an evaporation source; A method for forming a chalcopyrite thin film, characterized by forming the chalcopyrite thin film by a multi-dimensional vapor deposition method.
する請求項１記載のカルコパイライト薄膜の形成方法。2. The method for forming a chalcopyrite thin film according to claim 1, further comprising the step of: (2) heating the substrate during formation.
のカルコゲナイト元素が再蒸発する温度以上の温度とす
ることを特徴とする請求項２記載のカルコパイライト薄
膜の形成方法。(3) The method for forming a chalcopyrite thin film according to claim 2, characterized in that the substrate temperature during formation is set to a temperature higher than the temperature at which an excess of chalcogenite elements reevaporates relative to the stoichiometric ratio.
ライト化合物の成分元素の到達量に対して、カルコゲナ
イト元素の基板への到達量を化学量論比以上にすること
を特徴とする請求項３記載のカルコパイライト薄膜の形
成方法。(4) The chalcogenide according to claim 3, characterized in that during vapor deposition, the amount of the chalcogenite element reaching the substrate is set to a stoichiometric ratio or higher relative to the amount of component elements of the chalcopyrite compound excluding the chalcogenite element. Method of forming pyrite thin film.
素を除くカルコパイライト化合物の成分元素の合金を、
全て蒸発させることを特徴とする請求項２又は４記載の
カルコパイライト薄膜の形成方法。(5) During vapor deposition, an alloy of the component elements of the chalcopyrite compound excluding the chalcogenite element, which is one of the vapor deposition sources,
The method for forming a chalcopyrite thin film according to claim 2 or 4, characterized in that all of the chalcopyrite is evaporated.
請求項１〜５のいずれかに記載のカルコパイライト薄膜
の形成方法。(6) The method for forming a chalcopyrite thin film according to any one of claims 1 to 5, wherein the vapor deposition method is a resistance heating vapor deposition method.
ｕＩｎＳ＿２、あるいは、それらの固溶体であることを
特徴する請求項１〜６のいずれかに記載のカルコパイラ
イト薄膜の形成方法。(7) The chalcopyrite thin film is CuInSe_2, C
The method for forming a chalcopyrite thin film according to any one of claims 1 to 6, characterized in that uInS_2 or a solid solution thereof is used.
の形成方法によって得られたカルコパイライト薄膜を用
いることを特徴とする薄膜太陽電池。(8) A thin film solar cell characterized by using a chalcopyrite thin film obtained by the method for forming a chalcopyrite thin film according to any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2234284A JPH04114483A (en) | 1990-09-04 | 1990-09-04 | Forming method of chalcopyrite thin film and thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2234284A JPH04114483A (en) | 1990-09-04 | 1990-09-04 | Forming method of chalcopyrite thin film and thin film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04114483A true JPH04114483A (en) | 1992-04-15 |
Family
ID=16968568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2234284A Pending JPH04114483A (en) | 1990-09-04 | 1990-09-04 | Forming method of chalcopyrite thin film and thin film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04114483A (en) |
-
1990
- 1990-09-04 JP JP2234284A patent/JPH04114483A/en active Pending
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