JPH04111419A - Method and apparatus for vapor growth of compound semiconductor - Google Patents
Method and apparatus for vapor growth of compound semiconductorInfo
- Publication number
- JPH04111419A JPH04111419A JP23141490A JP23141490A JPH04111419A JP H04111419 A JPH04111419 A JP H04111419A JP 23141490 A JP23141490 A JP 23141490A JP 23141490 A JP23141490 A JP 23141490A JP H04111419 A JPH04111419 A JP H04111419A
- Authority
- JP
- Japan
- Prior art keywords
- doping
- growth
- compound semiconductor
- raw material
- material gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 150000001875 compounds Chemical class 0.000 title claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 239000002994 raw material Substances 0.000 claims description 26
- 238000001947 vapour-phase growth Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 42
- 239000013078 crystal Substances 0.000 abstract description 12
- 238000000354 decomposition reaction Methods 0.000 abstract description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract description 3
- 150000004678 hydrides Chemical class 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- -1 hydrogen compound Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002483 hydrogen compounds Chemical class 0.000 description 1
- JXFIGDZFRYFEJJ-UHFFFAOYSA-N indium(3+);phosphane Chemical compound P.[In+3] JXFIGDZFRYFEJJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は化合物半導体の気相成長法において、低成長温
度での高濃度ドーピング技術に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a high concentration doping technique at a low growth temperature in a compound semiconductor vapor phase growth method.
（従来の技術）
化合物半導体気相成長法は、母体半導体結晶の原料ガス
や母体半導体結晶中へのドーピング用原料ガスとして有
機金属や水素化合物あるいは塩化物が供給されている。(Prior Art) In the compound semiconductor vapor phase growth method, an organic metal, a hydrogen compound, or a chloride is supplied as a raw material gas for a base semiconductor crystal or a raw material gas for doping into the base semiconductor crystal.
この場合、化合物半導体のキャリア濃度は、ドーピング
用原料ガスの供給量を調節することによって制御するこ
とができ、ヘテロ・バイポーラトランジスタ（以下ＨＢ
Ｔと呼ぶ）や電界効果型トランジスタなどのデバイス作
製上重要な化合物半導体成長技術の一つである。In this case, the carrier concentration of the compound semiconductor can be controlled by adjusting the supply amount of the doping raw material gas, and the carrier concentration of the compound semiconductor can be controlled by adjusting the supply amount of the doping raw material gas.
It is one of the compound semiconductor growth techniques that are important for manufacturing devices such as (referred to as T) and field effect transistors.
（発明が解決しようとする課題）
このように化合物半導体気相成長法では、ドーピング量
の制御が容易に行われるわけであるが、例えば代表的な
化合物半導体であるガリウム砒素（ＧａＡｓ）やインジ
ウムガリウム砒素（ＩｎＧａＡｓ ）結晶中にドーピン
グを行う場合には、ドーピング元素によっては拡散が起
こりドーピング・プロファイルの急峻性が損なわれると
いう問題が生ずる。(Problem to be Solved by the Invention) As described above, in the compound semiconductor vapor phase growth method, the doping amount can be easily controlled. When doping an arsenic (InGaAs) crystal, a problem arises in that some doping elements cause diffusion, which impairs the steepness of the doping profile.
これは、ＨＢＴ等の急峻なｐ−ｎ接合を必要とするデバ
イスにとって、デバイス設計上大きな支障をもたらす、
半導体中でのドーピング元素の拡散は一般に成長温度が
高い程大きく、従ってこれを防止する為には成長温度の
低温化が必要とされる。This poses a major problem in device design for devices such as HBTs that require steep p-n junctions.
In general, the higher the growth temperature, the greater the diffusion of doping elements in a semiconductor, and therefore, in order to prevent this, it is necessary to lower the growth temperature.
しかしながら成長温度を低温化してゆくと、代表的なｎ
形ドーピング原料ガスであるシラン（Ｓｉｇｎ）等の水
素化合物は、その分解効率が低下する為にドーピング固
溶量も低下し、高濃度ドーピングが困難になるという問
題が生ずる０本発明は上記の欠点を改善するために提案
されたもので、その目的は、ドーピング元素の拡散抑制
に有効な低温成長においても分解効率の小さいドーピン
グ原料ガスを高濃度にドーピングさせることにある。However, as the growth temperature is lowered, the typical n
Hydrogen compounds such as silane (Sign), which are raw material gases for type doping, have a problem in that their decomposition efficiency decreases, so the amount of doping solid solution also decreases, making high concentration doping difficult. The purpose of this method is to dope the doping material gas at a high concentration with low decomposition efficiency even during low-temperature growth, which is effective in suppressing the diffusion of doping elements.
（課題を解決するための手段）
上記の目的を達成するため、本発明は化合物半導体の気
相成長法において、ｎ型、ｐ型ドーピング用原料ガスを
各々母体半導体結晶用原料ガスとは独立のガス導入管に
よって成長室に供給し、特にＳｉＨ４等の低温度では分
解効率の小さいドーピング原料ガスの導入管に予備加熱
炉を設け、ドーピング原料ガスを常温以上の温度に加熱
することによって活性化された原料ガスを成長領域に直
接供給することを特徴とする。従来技術とは、ドーピン
グ原料ガス用のガス導入管に予備加熱炉を設けているこ
とが本質的に異なるものである。(Means for Solving the Problems) In order to achieve the above object, the present invention provides a vapor phase growth method for compound semiconductors in which raw material gases for n-type and p-type doping are separated from raw material gases for host semiconductor crystals. The doping material gas is supplied to the growth chamber through a gas introduction pipe, and a preheating furnace is installed in the introduction pipe for the doping material gas, which has low decomposition efficiency at low temperatures, such as SiH4, and is activated by heating the doping material gas to a temperature above room temperature. It is characterized by directly supplying raw material gas to the growth region. This method is essentially different from the prior art in that a preheating furnace is provided in the gas introduction pipe for doping raw material gas.
（作用）
本発明においては、気相成長法による化合物半導体の成
長方法において、ｎ型もしくはｐ型ドーピング用原料ガ
スを反応室に導入する際に、ｎ型もしくはｐ型ドーピン
グ用原料ガスを常温以上の温度に加熱し、成長室に供給
することにより、活性化されたドーピング原料ガスを気
相成長室に供給するので、これによって高濃度のドーピ
ングを可能とすることができる。(Function) In the present invention, in the method for growing a compound semiconductor using a vapor phase growth method, when introducing the raw material gas for n-type or p-type doping into the reaction chamber, the raw material gas for n-type or p-type doping is heated to a temperature higher than room temperature. The activated doping material gas is supplied to the vapor phase growth chamber by heating the doping material gas to a temperature of 1 and supplying it to the growth chamber, thereby making it possible to perform high-concentration doping.
（実施例）
次に本発明の実施例について説明する。なお、実施例は
一つの例示であって、本発明の精神を逸脱しない範囲で
、種々の変更あるいは改良を行いうることは言うまでも
ない。(Example) Next, an example of the present invention will be described. Note that the embodiments are merely illustrative, and it goes without saying that various changes and improvements can be made without departing from the spirit of the present invention.
本発明の下記実施例では、■−■族化合物半導体結晶の
有機金属気相成長法（以下ＭＯＣＶＤ法と呼ぶ）に限っ
て述べているが、本発明の主旨を逸脱しない範囲におい
て、ＩＩ−ＶＩ族化合物半導体結晶等へのドーピング方
法やＭＯＣＶＤ法以外のクロライド気相成長法やハイド
ライド気相成長法等の化合物半導体気相成長法にも適用
できることは言うまでもない。In the following embodiments of the present invention, only the metal organic chemical vapor deposition method (hereinafter referred to as MOCVD method) of group ■-■ compound semiconductor crystals is described, but within the scope of the gist of the present invention, II-VI Needless to say, the present invention can also be applied to methods for doping group compound semiconductor crystals, etc., and to compound semiconductor vapor phase growth methods other than MOCVD, such as chloride vapor phase growth and hydride vapor phase growth.
第１図は本発明の方法によるＭＯＣＶＤ装置の成長室部
分の断面模式図である０本発明においては、原料ガスと
してトリメチルインジウム（ＴＭＩ）。FIG. 1 is a schematic cross-sectional view of a growth chamber portion of an MOCVD apparatus according to the method of the present invention. In the present invention, trimethylindium (TMI) is used as the raw material gas.
トリエチルガリウム（τｆ！Ｇ） 、ホスフィン（ＰＨ
ｆｆ）。Triethyl gallium (τf!G), phosphine (PH
ff).
アルシン（Ａｓｈｓ）を用いている。インジウム燐（Ｉ
ｎＰ）。Arsine (Ashs) is used. Indium phosphorus (I)
nP).
インジウムガリウム砒素（ｌｎＧａＡｓ） 、インジウ
ムガリウム砒素燐（ＩｎＧａＡｓＰ） 等の結晶成長
に用いられ、ドーピング原料ガスとしてはジメチル亜鉛
（ＤＭＺｎ ）と１００１）Ｐ＠水素希釈の５ｉ１１４
を用いている。It is used for crystal growth of indium gallium arsenide (lnGaAs), indium gallium arsenide phosphide (InGaAsP), etc., and the doping raw material gases are dimethyl zinc (DMZn) and 5i114 diluted with 1001)P@hydrogen.
is used.
ＴＭｌ、 ＴＥＧの■族原料ガス供給の為の導入管ｌ及
びＰｉｌｌ、Ａｓｈｓの■族原料ガス供給のための導入
管２とは独立にＤＭＺｎ、 ＳｉＨ４のガス導入管３．
４が設けられており、各原料ガスはこれらのガス導入管
から成長室６に直接供給される。特に低成長温度で分解
効率の小さい５ｆＨ４の導入管４には、常温から４００
°Ｃまでの温度範囲で温度制御が可能である予備加熱炉
５が設けられている。 ＤＭＺｎは低温度でも分解効率
が高いので予備加熱炉は必要としない。DMZn, SiH4 gas introduction pipe 3.Independently from the introduction pipe 1 for supplying group Ⅰ raw material gas of TMl and TEG and the introduction pipe 2 for supplying group Ⅰ raw material gas of Pill and Ashs.3.
4 are provided, and each source gas is directly supplied to the growth chamber 6 from these gas introduction pipes. In particular, the introduction pipe 4 of 5fH4, which has a low growth temperature and low decomposition efficiency, has a temperature of 400
A preheating furnace 5 is provided, the temperature of which can be controlled in the temperature range up to °C. DMZn has high decomposition efficiency even at low temperatures, so a preheating furnace is not required.
予備加熱炉５を成長室６に可能な限り近づける為に成長
室６はスチール製で作られている。成長室６の内部には
基板７を置く為のモリブデン・サセプタ８が設置されて
おり、基板７はサセプタ日直下のカーボン・ヒータ９に
より加熱されるようになっている。In order to bring the preheating furnace 5 as close as possible to the growth chamber 6, the growth chamber 6 is made of steel. A molybdenum susceptor 8 for placing a substrate 7 is installed inside the growth chamber 6, and the substrate 7 is heated by a carbon heater 9 directly under the susceptor.
この装置で、成長温度を５５０℃と低温度に設定し、ｒ
ｎＧａＡｓへのＳｉｎ、によるｎ型ドーピングを、予備
加熱炉５を設けた時と設けない時とで行い、成長後のＩ
ｎＧａＡｓ中のキャリア濃度を室温でパンデルバアウ（
ｖａｎ ｄｅｒ ｐａｕ＠）法によるホール効果測定に
より求めた。With this equipment, the growth temperature was set at a low temperature of 550°C, and r
N-type doping of nGaAs with Sin was performed with and without the preheating furnace 5, and the I
The carrier concentration in nGaAs was determined by Panderbau (
It was determined by Hall effect measurement using the van der pau method.
第２図は第１図に示したＭＯＣＶＤ装置を用いてＩｎＧ
ａＡａ結晶中へのＳｉドーピングを行った結果である。Figure 2 shows how InG is produced using the MOCVD apparatus shown in Figure 1.
This is the result of doping Si into aAa crystal.
横軸はドーピング原料ガスである５ｉｎ４の供給量を、
また縦軸はキャリア濃度を示す、黒丸は本発明によるも
のを示し、加熱温度は約３００℃〜３５０°Ｃである。The horizontal axis is the supply amount of 5in4, which is the doping raw material gas,
Further, the vertical axis indicates the carrier concentration, the black circles indicate those according to the present invention, and the heating temperature is about 300°C to 350°C.
図に示す様に、予備加熱炉５を用いない時のＳｉドーピ
ング量が３ ＸＩＯ”ｃ■−３で飽和したのに対して、
予備加熱炉５を設けた場合には２ ＸＩＯ”ａｍ−”と
−桁高い高濃度ｎ型ドーピングが達成され、本発明の効
果が確認された。また、このＩｎＧａＡｓ結晶中のＳｉ
濃度を二次イオン買置分析法によって測定した結果、キ
ャリア濃度とは良い一致を示すことも確認された。As shown in the figure, while the Si doping amount when the preheating furnace 5 was not used was saturated at 3XIO"c■-3,
When the preheating furnace 5 was provided, a high concentration of n-type doping of 2 XIO "am-" was achieved, which was an order of magnitude higher, and the effect of the present invention was confirmed. Moreover, the Si in this InGaAs crystal
As a result of measuring the concentration using a secondary ion analysis method, it was also confirmed that the concentration showed good agreement with the carrier concentration.
（発明の効果）
以上述べたように本発明によれば、気相成長法による化
合物半導体の成長方法において、ｎ型もしくはＰ型ドー
ピング用原料ガスを反応室に導入する際に、ｎ型もしく
はｐ型ドーピング用原料ガスを常温以上の温度に加熱し
、成長室に供給することにより、低成長温度において分
解効率が低く高濃度ドーピングが困難なドーピング原料
ガスでも、成長室直前に設けた予備加熱炉を通し原料ガ
スを常温以上に予備加熱させることによって、低成長温
度でも高濃度ドーピングが可能となる効果を有する。(Effects of the Invention) As described above, according to the present invention, in the method for growing a compound semiconductor by vapor phase growth, when introducing the raw material gas for n-type or p-type doping into the reaction chamber, By heating the raw material gas for mold doping to a temperature higher than room temperature and supplying it to the growth chamber, even if the doping raw material gas has low decomposition efficiency and is difficult to perform high concentration doping at low growth temperatures, it can be used in a preheating furnace installed just before the growth chamber. By preheating the raw material gas to room temperature or higher through the process, it is possible to achieve high concentration doping even at low growth temperatures.
第１図は本発明に用いるＭＯＣＶＤ装置の成長室部分の
断面模式図である。第２図はＩｎＧａＡｓ結晶中のＳｔ
ドーピングを行った結果を示す。
１・・・ＴＭＩやＴＥＧ等の■族原料ガス導入管２・・
・ＰＨ，やＡｓＨｚ等のＶ族原料ガス導入管３・・・ド
ーピング原料ガスであるＤＭＺｎの導入管４・・・ドー
ピング原料ガスである５１ｇ４の導入管５・・・予備加
熱炉
６・・・成長室
７・・・基板
８・・・サセプタ
９・・・加熱ヒータ
ｌＯ・・・サセプタ支持棒FIG. 1 is a schematic cross-sectional view of the growth chamber portion of the MOCVD apparatus used in the present invention. Figure 2 shows St in the InGaAs crystal.
The results of doping are shown. 1... Group III raw material gas inlet pipe such as TMI or TEG 2...
・Introduction tube 3 for V group raw material gas such as PH, AsHz...Introduction tube 4 for DMZn which is doping raw material gas...Introduction tube 5 for 51g4 which is doping raw material gas...Preheating furnace 6... Growth chamber 7... Substrate 8... Susceptor 9... Heater lO... Susceptor support rod
Claims (2)
て、ｎ型もしくはｐ型ドーピング用原料ガスを反応室に
導入する際に、ｎ型もしくはｐ型ドーピング用原料ガス
を常温以上の温度に加熱し、成長室に供給することを特
徴とする化合物半導体気相成長法。(1) In a method for growing compound semiconductors by vapor phase growth, when introducing the raw material gas for n-type or p-type doping into the reaction chamber, the raw material gas for n-type or p-type doping is heated to a temperature above room temperature. , a compound semiconductor vapor phase growth method characterized by supplying a compound semiconductor to a growth chamber.
導入管を設け、少なくとも１つのガス導入管に予備加熱
炉を設けたことを特徴とする化合物半導体気相成長装置
。(2) A compound semiconductor vapor phase growth apparatus characterized in that a growth chamber provided with a heater for heating a substrate is provided with a plurality of gas introduction pipes, and at least one gas introduction pipe is provided with a preheating furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23141490A JPH04111419A (en) | 1990-08-31 | 1990-08-31 | Method and apparatus for vapor growth of compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23141490A JPH04111419A (en) | 1990-08-31 | 1990-08-31 | Method and apparatus for vapor growth of compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04111419A true JPH04111419A (en) | 1992-04-13 |
Family
ID=16923222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23141490A Pending JPH04111419A (en) | 1990-08-31 | 1990-08-31 | Method and apparatus for vapor growth of compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04111419A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011136077A1 (en) | 2010-04-28 | 2011-11-03 | シャープ株式会社 | Vapor deposition device, vapor deposition method, and semiconductor element manufacturing method |
| JP2015122540A (en) * | 2015-03-16 | 2015-07-02 | 住友電気工業株式会社 | Silicon carbide semiconductor, and method and apparatus for manufacturing the same |
-
1990
- 1990-08-31 JP JP23141490A patent/JPH04111419A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011136077A1 (en) | 2010-04-28 | 2011-11-03 | シャープ株式会社 | Vapor deposition device, vapor deposition method, and semiconductor element manufacturing method |
| JP2015122540A (en) * | 2015-03-16 | 2015-07-02 | 住友電気工業株式会社 | Silicon carbide semiconductor, and method and apparatus for manufacturing the same |
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