JPH0411024B2 - - Google Patents
Info
- Publication number
- JPH0411024B2 JPH0411024B2 JP59274518A JP27451884A JPH0411024B2 JP H0411024 B2 JPH0411024 B2 JP H0411024B2 JP 59274518 A JP59274518 A JP 59274518A JP 27451884 A JP27451884 A JP 27451884A JP H0411024 B2 JPH0411024 B2 JP H0411024B2
- Authority
- JP
- Japan
- Prior art keywords
- development
- resist
- pattern
- photoresist
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000011161 development Methods 0.000 claims description 69
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000018109 developmental process Effects 0.000 description 61
- 229920002120 photoresistant polymer Polymers 0.000 description 25
- 238000005530 etching Methods 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- -1 tetramethylammonium hydride Chemical compound 0.000 description 2
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-naphthoquinone Chemical compound C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000012089 stop solution Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
- G03C5/18—Diazo-type processes, e.g. thermal development, or agents therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明はプリグルーブパターン形成方法、特に
光デイスク用原盤の製造においてフオトレジスト
を用いてシヤープなパターンを形成する方法に係
る。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for forming a pregroove pattern, particularly to a method for forming a sharp pattern using a photoresist in the production of a master for an optical disk.
光デイスク用原盤としては、フオトレジストを
フオトリソグラフ技術でパターニングしたものが
用いられ、その凹凸パターンを利用して凹凸パタ
ーンを有する金属膜製スタンパ（金型）を作成し
ている。光デイスクのプリグループのパターン精
度は一般的に非常に高い必要があるため、原盤を
なすフオトレジストパターンの精度も非常に高い
ことが要求される。 As a master for an optical disk, a photoresist patterned by photolithographic technology is used, and the uneven pattern is used to create a metal film stamper (mold) having an uneven pattern. Since the pattern precision of the pre-group of an optical disk generally needs to be very high, the precision of the photoresist pattern forming the master disc is also required to be very high.
従来の技術
光デイスク用原盤の作成に用いるフオトレジス
トのパターンであつてもその形成方法はIC用等
と基本的に同様であり、ガラス等の基板上にフオ
トレジストを塗布し、プリベーク後、グルーブの
形状に選択的に露光し、現像液で現像し、洗浄し
てから、最後にポストベークするが、フオトレジ
ストの厚さに応じて露光量と現像液濃度を決めて
一段階の現像を行なつている。Conventional technology The method of forming photoresist patterns used to create optical disk masters is basically the same as that for ICs, etc. The photoresist is applied onto a substrate such as glass, and after prebaking, grooves are formed. The shape of the photoresist is selectively exposed to light, developed with a developer, washed, and finally post-baked. One-step development is performed by determining the exposure amount and developer concentration depending on the thickness of the photoresist. It's summery.
発明が解決しようとする問題点
しかしながら、従来のパターン形成方法による
と、パターンの解像度が悪く、露光部と未露光部
のコントラストが低い、あるいはパターンの溝底
部にフオトレジストの未現像部分が残り、これら
がノイズの原因になり、光デイスクの信号品質向
上の妨げになつているという問題がある。Problems to be Solved by the Invention However, with conventional pattern forming methods, the resolution of the pattern is poor, the contrast between exposed and unexposed areas is low, or undeveloped portions of the photoresist remain at the bottom of the grooves of the pattern. There is a problem in that these causes noise and are an impediment to improving the signal quality of optical discs.
第５図に、上記の如く従来の方法で形成したフ
オトレジストのパターンの要部を模式的に示す。
ガラス基板１上に当初、図において破線で示した
H0の高さにフオトレジストを塗布し、幅Ｗで露
光した後（例えば、Ho（150nｍ、Ｗ＝0.5μｍ）、
これを現像すると、図に示す如きフオトレジスト
パターン２′が得られる。この膜厚Ｈは例えば
80nｍ程度になる。また、パターンの溝底部に未
現像部分３が残つている。 FIG. 5 schematically shows the main part of a photoresist pattern formed by the conventional method as described above.
On the glass substrate 1, initially indicated by a broken line in the figure
After applying photoresist to a height of H 0 and exposing it to a width W (for example, Ho (150 nm, W = 0.5 μm),
When this is developed, a photoresist pattern 2' as shown in the figure is obtained. For example, this film thickness H is
It will be about 80nm. Furthermore, an undeveloped portion 3 remains at the bottom of the groove of the pattern.
問題点を解決するための手段
本発明は、上記問題点を解決するために、基板
上に厚さ0.15μｍ以下のキノンジアザイド系のポ
ジレジスト膜を形成し、該レジスト膜をレーザー
光で選択的に露光して潜像を形成した後、アルカ
リ現像液で該潜像を不完全にしかしレジスト膜の
パターンが基板表面に達するまで現像（一次現
像）した段階で、水で現像途中の該レジスト膜を
処理して現像を一旦停止し、それから該レジスト
を乾燥させることなく再びアルカリ現像液を用い
て現像（二次現像）を完了し、かつ、一次現像の
現像時間が一次及び二次現像の合計時間の10〜40
％であることを特徴とする光デイスク用原盤のプ
リグルーブパターン形成方法を提供する。Means for Solving the Problems In order to solve the above problems, the present invention forms a quinone diazide positive resist film with a thickness of 0.15 μm or less on a substrate, and selectively selectively coats the resist film with a laser beam. After exposing to light to form a latent image, the latent image is incompletely developed with an alkaline developer (primary development) until the pattern of the resist film reaches the substrate surface, and then the resist film in the middle of development is removed with water. After processing, development is temporarily stopped, and then development (secondary development) is completed using an alkaline developer again without drying the resist, and the development time of the first development is the total time of the first and second development. 10~40
% of a pregroove pattern on a master disc for an optical disc.
本発明は、レジストを現像停止液で処理する
と、レジストの未露光部（ポジ形レジストの場
合）の現像液によるエツチング速度が低減し、レ
ジストの露光部とのエツチング速度比が増大する
という性質を利用したものである。ただし、露光
後のレジストを何ら現像することなく最初に現像
停止液で処理してから現像した場合には初期の成
果が得られない。必ず、露光後のレジストを一旦
一定程度不完全に現像してから現像停止液で処理
することによつてはじめて、レジストの未露光部
（ポジ形の場合）のエツチング速度が低下する。
こうしてレジストの露光部と未露光部の間のエツ
チング速度の比が増大すれば、あとは普通に残り
の現像を完了することによつて、全体として解像
度が向上し、かつパターンの溝底部のレジスト残
渣もきれいに除去すことが可能になる。また、パ
ターン形成のコントロール性が容易になる。 The present invention has a property that when a resist is treated with a development stop solution, the etching rate of the unexposed areas of the resist (in the case of a positive resist) by the developer is reduced, and the etching rate ratio with the exposed areas of the resist is increased. It was used. However, if the exposed resist is first treated with a development stopper and then developed without any development, the initial results will not be obtained. The etching rate of the unexposed portions of the resist (in the case of positive type) is necessarily reduced only by developing the exposed resist to a certain extent incompletely and then treating it with a development stopper.
In this way, if the ratio of etching speed between the exposed and unexposed areas of the resist increases, the remaining development can be completed normally, improving the overall resolution and removing the resist at the bottom of the grooves of the pattern. Residues can also be removed cleanly. Furthermore, pattern formation can be easily controlled.
現像停止液による処理が、露光後一旦不完全に
現像したレジストに対して行なわなければ有効で
ない理由については、必ずしも明らかでないが、
本発明者らは後で述べる実験結果等から次のよう
に考えている。すなわち、塗布されたレジストは
表面層とその下の本体層の２層構造を有してお
り、現像停止液による処理でレジストのエツチン
グ速度を低下させるには、その表面層を除去して
からその下の本体層に対して現像停止液を直接に
作用させなければ効果がないのである。 Although it is not necessarily clear why treatment with a development stopper is not effective unless it is performed on a resist that has been incompletely developed after exposure,
The inventors of the present invention have the following idea based on the experimental results described later. In other words, the applied resist has a two-layer structure: a surface layer and a main body layer below it, and in order to reduce the etching rate of the resist by treatment with a development stopper, the surface layer must be removed first. It has no effect unless the developer stopper is applied directly to the underlying main layer.
本発明では、ポジ形フオトレジストであるキノ
ンジアザイド系のフオトレジストをアルカリ現像
液、例えば、テトラメチルアンモニウムハイドラ
イドのような有機アルカリあるいは水酸化ナトリ
ウムのような無機アルカリで現像し、現像停止液
として水を用いる。 In the present invention, a quinone diazide photoresist, which is a positive type photoresist, is developed with an alkaline developer, for example, an organic alkali such as tetramethylammonium hydride or an inorganic alkali such as sodium hydroxide, and water is used as a development stopper. use
キノンジアザイド系フオトレジストの代表的な
例には、２，３，４−トリオキシベンゾフエノン
−３，４−ビス〔ナフトキノン−１，２−ジアジ
ド−５−スルホン酸〕エステル、２−〔ナフトキ
ノン−１，２−ジアジド−５−スルホニルオキ
シ〕−７−オキシナフタリン、ナフトキノン−１，
２−ジアジド−５−スルフアニリド、ナフトキノ
ン−１，２−ジアジド−５−スルホン酸ノボラツ
クエステルなどがある。 Typical examples of quinonediazide photoresists include 2,3,4-trioxybenzophenone-3,4-bis[naphthoquinone-1,2-diazide-5-sulfonic acid] ester, 2-[naphthoquinone- 1,2-Diazido-5-sulfonyloxy]-7-oxynaphthalene, naphthoquinone-1,
Examples include 2-diazide-5-sulfanilide and naphthoquinone-1,2-diazide-5-sulfonic acid novolaque ester.
本発明のレジストパターは光デイスク用原盤の
プリグルーブパターンである。そのため、基板上
にレジストを膜厚0.15μｍ以下に形成する。これ
以上の膜厚は必要でもないし、また厚すぎると現
像後にパターンの溝部に残渣が残るおそれがあ
る。この膜厚0.15μｍ以下のレジストをプリグル
ーブパターンにレーザー露光後、本発明の上記原
理に従い２段階現像し、かつ一次現像時間を総現
像時間の10〜40％とする。これによつて所望の膜
厚（溝深さ）のシヤープはパターンが形成され、
光デイスクの高い信号品質が得られる。 The resist pattern of the present invention is a pregroove pattern for an optical disc master. Therefore, a resist is formed on the substrate to a thickness of 0.15 μm or less. It is not necessary for the film to be thicker than this, and if it is too thick, there is a risk that residue will remain in the grooves of the pattern after development. After this resist having a film thickness of 0.15 μm or less is exposed to laser light in a pregroove pattern, it is developed in two steps according to the above-mentioned principle of the present invention, and the primary development time is set to 10 to 40% of the total development time. As a result, a sharp pattern of the desired film thickness (groove depth) is formed.
High signal quality of optical discs can be obtained.
例 １
第１図を参照して説明する。下記式を有するキ
ノンジアザイド系フオトレジスト（シツプレイ社
の商品AZ1350J）
をエチルセロソルブアセテートで希釈し、14イン
チ径のガラス基板１１上にスピンコート後90℃30
分間プリベークして厚さho約95nｍの乾燥フオト
レジスト膜１２を形成した。Example 1 This will be explained with reference to FIG. Quinonediazide photoresist having the following formula (product AZ1350J of Situplay) was diluted with ethyl cellosolve acetate, spin-coated on a 14-inch diameter glass substrate 11, and heated at 90℃30.
A dry photoresist film 12 having a thickness of about 95 nm was formed by prebaking for 1 minute.
次いで、ガラス円板１１を所定の回転数で回転
させてAr+レーザ（波長457nｍ）で露光幅ｗ＝
0.5μｍに円周状に露光した（第１図Ａ）。 Next, the glass disk 11 is rotated at a predetermined number of rotations, and the exposure width w=
Circumferential exposure was performed to 0.5 μm (Figure 1A).
露光したフオトレジスト膜１２に0.25規定のテ
トラメチルアンモニウムハイドライド（シツプレ
イ社の商品MF312）を５〜10秒間スプレーして
第１次現像を行なつた。このとき、フオトレジス
ト１２′は、第１図Ｂに示す如く、主に露光部が
エツチングされるが、未露光部でも表面近くが僅
かにエツチングされている。この部分的に現像さ
れたフオトレジスト１２′に水をスプレーしてフ
オトレジストに数10秒間水を吸収させた。 The exposed photoresist film 12 was sprayed with 0.25 normal tetramethylammonium hydride (MF312, manufactured by Shipley Co., Ltd.) for 5 to 10 seconds to perform primary development. At this time, as shown in FIG. 1B, the exposed portions of the photoresist 12' are etched mainly, but even the unexposed portions are slightly etched near the surface. Water was sprayed onto the partially developed photoresist 12' and the photoresist was allowed to absorb water for several tens of seconds.
次に、再び上記と同じ現像液をスプレーして第
２次現像を行なつた。第２次現像は40〜100秒程
度であつた。それから、水をスプレーして現像を
停止した。その後、140℃30分間のポストベーク
を行なつた。 Next, the same developer as above was sprayed again to perform a second development. The second development took about 40 to 100 seconds. The development was then stopped by spraying water. Thereafter, post-baking was performed at 140°C for 30 minutes.
こうして第１図Ｃに示す如きフオトレジストの
パターン１２″が得られた。電子顕微鏡で観察し
たところ、膜厚ｈは約80nｍであり、パターンの
肩部のだれは殆どなく、しかもパターンの溝の底
部に未現像フオトレジストの残渣は全く見られな
かつた。 In this way, a photoresist pattern 12'' as shown in FIG. No undeveloped photoresist residue was observed on the bottom.
第２図に、こうして得られたレジストパターン
の膜厚ｈおよび溝幅ｗを第２次現像の時間に関し
てグラフ化して示す。但し、このグラフでは第２
次現像が40秒未満の場合のデータも含まれてい
る。 FIG. 2 shows a graph of the film thickness h and groove width w of the resist pattern thus obtained with respect to the time of the second development. However, in this graph, the second
Data when the next development time is less than 40 seconds is also included.
第２図を見ると、パターンの溝幅ｗは、当初、
第２次現像の時間の増加と共に大きくなるが、第
２次現像が30秒付近で溝幅ｗは0.5μｍに達し、
（露光幅Ｗ＝0.5μｍである）、その後第２次現像を
それ以上長く、例えば100秒以上にしても溝幅ｗ
は0.5μｍのまま不変であり、また、膜厚ｈは第２
次現像の時間にかかわりなく当初から80nｍで一
定である。これらの結果はフオトレジストの未露
光部でかつ水で処理された部分は第２次現像によ
つて全くエツチングされていないこと、すなわ
ち、第１次現像後水で処理することによつて、フ
オトレジストの未露光部がもはや現像液でエツチ
ングされないかあるいはエツチング速度が大幅に
低下したことを示している。 Looking at Figure 2, the groove width w of the pattern is initially
The groove width w increases as the second development time increases, and reaches 0.5 μm when the second development takes about 30 seconds.
(Exposure width W = 0.5 μm), and even if the second development is made longer, for example, 100 seconds or more, the groove width W
remains unchanged at 0.5 μm, and the film thickness h remains unchanged at the second
It remains constant at 80 nm from the beginning regardless of the time of the next development. These results indicate that the unexposed areas of the photoresist that were treated with water were not etched at all by the second development; that is, by treating with water after the first development, the photoresist This indicates that the unexposed areas of the resist are no longer etched by the developer or the etching rate has been significantly reduced.
例 ２
例１と同様に但し膜厚を150nｍに作成し、例
１と同様に露光したフオトレジストを例１と同様
に、但し第１次現像と第２次現像の時間の比を変
えて現像した。こうして得たグルーブ付きレジス
ト原盤に反射膜をコーテイングし、光デイスク再
生機からのRF信号をスペクトラアナライザに入
れて、ノイズを測定した。パターンのフラツト部
（未露光部）に対するグルーブのノイズ増加量を
求めた結果を第３図に示す。同図中、横軸の０％
は第１次現像を行なわず、最初に水で処理してか
ら第２次現像を行なつたことを、そして100％は
第１次現像だけを行なつて第２次現像を行なわな
いこと、すなわち、従来の現像プロセスと同じで
あるを意味している。図から、第１次現像時間を
総現像時間の10〜40％にすると、グルーブ部のノ
イズを低減するのに有効であることが認められ
る。Example 2 A photoresist prepared in the same manner as in Example 1, but with a film thickness of 150 nm and exposed in the same manner as in Example 1, was developed in the same manner as in Example 1, but with a different time ratio between the first development and the second development. did. The grooved resist master thus obtained was coated with a reflective film, and the RF signal from the optical disc player was input into a spectrum analyzer to measure noise. FIG. 3 shows the results of determining the amount of noise increase in the groove relative to the flat portion (unexposed portion) of the pattern. In the same figure, 0% of the horizontal axis
100% did not perform the primary development, but first treated with water and then performed the secondary development, and 100% performed only the primary development and did not perform the secondary development; That is, it means that it is the same as the conventional development process. From the figure, it is recognized that setting the first development time to 10 to 40% of the total development time is effective in reducing noise in the groove portion.
第４図は、上記の操作における２段階の現像が
終了した後のレジストの膜厚の変化を示す。第１
次現像時間が短かいほど現像後のレジストの膜厚
が厚くなること、しかし、第１次現像が短時間で
あるが存在しなければ水による処理の効果が殆ん
ど見られないことがわかる。ここでも、第１次現
像後に行なう現像停止用の水がレジスト膜に吸水
されてフラツト部（未露光部）の現像速度が第２
次現像では遅くなり、１段階の現像法に比べて露
光部と未露光部のエツチング速度比がより大きく
なつていることが示されている。 FIG. 4 shows the change in the resist film thickness after the two-stage development in the above operation is completed. 1st
It can be seen that the shorter the next development time, the thicker the resist film after development becomes. However, if the first development is short but absent, the effect of water treatment is hardly seen. . Here too, the water used to stop the development after the first development is absorbed by the resist film, and the development speed of the flat area (unexposed area) is increased to the second level.
It has been shown that the subsequent development is slower and the etching rate ratio between exposed and unexposed areas is larger than in the one-step development method.
例 ３
例２の現像液濃度を0.2〜0.24Nにした他は例２
と同様の検討を行い同様に第１次現像時間10〜40
％がノイズ低減に効果が認められた。Example 3 Example 2 except that the developer concentration in Example 2 was changed to 0.2 to 0.24N.
The same study was carried out and the first development time was 10 to 40.
% was found to be effective in reducing noise.
例 ４
例２の現像液濃度を0.26〜0.27Nにした他は例
２と同様の検討を行い、例２と同様の結果が得ら
れた。Example 4 The same study as in Example 2 was conducted except that the developer concentration in Example 2 was changed to 0.26 to 0.27N, and the same results as in Example 2 were obtained.
例 ５
例２の現像液を水酸化ナトリウム（シツプレイ
社351デベロツパー）に代え、濃度0.23N、0.30N
で行つた他は例２と同様の実験を行い、同様の結
果を得た。Example 5 The developer in Example 2 was replaced with sodium hydroxide (Shipley Co., Ltd. 351 Developer), and the concentration was 0.23N and 0.30N.
The same experiment as in Example 2 was carried out except that the same results were obtained.
例 ６
例２とレジストを下記式を有するキノン−ジア
ザイド系レジスト（東京応化製OFPR800）に代
え、例２と同様の検討を行ない、同様の結果を得
た。Example 6 The same study as in Example 2 was conducted except that the resist in Example 2 was replaced with a quinone-diazide resist having the following formula (OFPR800 manufactured by Tokyo Ohka Co., Ltd.), and similar results were obtained.
例 ７
例２の第２次現像時間をさらに二段階に分けて
現像したが、例２と同様の結果が得られた。 Example 7 Although the secondary development time in Example 2 was further divided into two stages, the same results as in Example 2 were obtained.
発明の効果
本発明によりレジストの露光部と未露光部のエ
ツチング速度比が大きくなるので、解像度が増
し、コントラストが良くなり、パターンの溝底部
におけるレジストの未現像残渣がなくなり、また
パターン形成の制御性がよくなる。Effects of the Invention The present invention increases the etching rate ratio between exposed and unexposed areas of the resist, thereby increasing resolution, improving contrast, eliminating undeveloped resist residue at the bottom of pattern grooves, and controlling pattern formation. Sexuality improves.
第１図は本発明によるパターン形成工程を説明
する図、第２図は現像パターンの膜厚ｈとグルー
ブ幅ｗの第２次現像時間に関するグラフ図、第３
図は第１次現像時間の占める割合に関する現像パ
ターンのフラツト部に対するグルーブ部ノイズを
表わすグラフ図、第４図は第１次現像時間の占め
る割合に関する現像後のレジストの膜厚を表わす
グラフ図、第５図は従来の現像法で得られるレジ
ストパターンの模式断面図である。
１……ガラス基板、２……塗布レジスト、２′
……現像後のレジスト、３……レジスト残渣、１
１……ガラス基板、１２……塗布レジスト、１
２′……第１次現像後のレジスト、１２″……第２
次現像後のレジスト。
FIG. 1 is a diagram explaining the pattern forming process according to the present invention, FIG. 2 is a graph diagram regarding the second development time of the film thickness h of the developed pattern and the groove width w, and FIG.
The figure is a graph showing the noise in the groove part of the flat part of the development pattern in relation to the proportion occupied by the first development time, and FIG. 4 is a graph showing the film thickness of the resist after development in relation to the proportion occupied by the first development time. FIG. 5 is a schematic cross-sectional view of a resist pattern obtained by a conventional development method. 1...Glass substrate, 2...Coating resist, 2'
...Resist after development, 3...Resist residue, 1
1...Glass substrate, 12...Coating resist, 1
2'...Resist after first development, 12''...Second
Resist after next development.
Claims (1)
ド系のポジレジスト膜を形成し、該レジスト膜を
レーザー光で選択的に露光して潜像を形成した
後、アルカリ現像液で該潜像を不完全にしかしレ
ジスト膜のパターンが基板表面に達するまで現像
（一次現像）した段階で、水で現像途中の該レジ
スト膜を処理して現像を一旦停止し、それから該
レジストを乾燥させることなく再びアルカリ現像
液を用いて現像（二次現像）を完了し、かつ、一
次現像の現像時間が一次及び二次現像の合計時間
の10〜40％であることを特徴とする光デイスク用
原盤のプリグルーブパターン形成方法。1 Form a positive quinonediazide resist film with a thickness of 0.15 μm or less on a substrate, selectively expose the resist film to laser light to form a latent image, and then incompletely remove the latent image with an alkaline developer. However, at the stage where the resist film pattern has been developed (primary development) until it reaches the substrate surface, the resist film in the middle of development is treated with water to temporarily stop the development, and then the resist is again developed with alkaline without drying. A pre-groove pattern for an optical disk master, characterized in that development (secondary development) is completed using a solution, and the development time of the first development is 10 to 40% of the total time of the first and second development. Formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27451884A JPS61156125A (en) | 1984-12-28 | 1984-12-28 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27451884A JPS61156125A (en) | 1984-12-28 | 1984-12-28 | Pattern forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61156125A JPS61156125A (en) | 1986-07-15 |
| JPH0411024B2 true JPH0411024B2 (en) | 1992-02-27 |
Family
ID=17542814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27451884A Granted JPS61156125A (en) | 1984-12-28 | 1984-12-28 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61156125A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196285A (en) * | 1990-05-18 | 1993-03-23 | Xinix, Inc. | Method for control of photoresist develop processes |
| JP2006344310A (en) * | 2005-06-09 | 2006-12-21 | Sony Corp | Development method and development apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5159634A (en) * | 1974-09-16 | 1976-05-24 | Rca Corp | Denshibiimukanjuseitaishokuhimakuno genzoho |
| JPS57112747A (en) * | 1980-12-29 | 1982-07-13 | Fujitsu Ltd | Developing method for positive type radiation resist film |
-
1984
- 1984-12-28 JP JP27451884A patent/JPS61156125A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5159634A (en) * | 1974-09-16 | 1976-05-24 | Rca Corp | Denshibiimukanjuseitaishokuhimakuno genzoho |
| JPS57112747A (en) * | 1980-12-29 | 1982-07-13 | Fujitsu Ltd | Developing method for positive type radiation resist film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61156125A (en) | 1986-07-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2731516B2 (en) | Method of forming resist pattern | |
| US5413898A (en) | Method of forming a pattern on a substrate having a step change in height | |
| JPS6029936B2 (en) | Pattern formation method | |
| JPH0669120A (en) | Formation of fine resist pattern | |
| US6562550B2 (en) | Preparation of optical disk master | |
| JPH0638299B2 (en) | Manufacturing method of optical disk with guide groove | |
| JPH10504599A (en) | Reduction of metal ions in novolak resin solution using anion exchange resin | |
| JPH0411024B2 (en) | ||
| JPH0143450B2 (en) | ||
| US20240012327A1 (en) | Method for forming a lift-off mask structure | |
| JPS5984426A (en) | Patterning method of positive resist | |
| JP2888683B2 (en) | Method of forming resist mask pattern by light exposure | |
| JPH02247647A (en) | Production of phase shift mask | |
| JPH02971A (en) | Formation of resist pattern | |
| JPS61159731A (en) | Method of forming fine pattern | |
| JPH06151351A (en) | Method of electrode formation | |
| JPH0594945A (en) | Method of forming pattern | |
| JP3264424B2 (en) | Patterning method for photoresist layer | |
| JPS61241745A (en) | Negative type photoresist composition and formation of resist pattern | |
| JP2712407B2 (en) | Method of forming fine pattern using two-layer photoresist | |
| JP2779528B2 (en) | Method for manufacturing semiconductor device | |
| JPH0263056A (en) | Formation of resist pattern | |
| JP2551117B2 (en) | Resist pattern formation method | |
| JPH10282677A (en) | Production of master disk for optical disk and substrate of optical disk | |
| JPH049954A (en) | Development method by wet process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |