JPH04106986A - N-type semiconductor film, manufacture thereof and semiconductor device - Google Patents
N-type semiconductor film, manufacture thereof and semiconductor deviceInfo
- Publication number
- JPH04106986A JPH04106986A JP2222510A JP22251090A JPH04106986A JP H04106986 A JPH04106986 A JP H04106986A JP 2222510 A JP2222510 A JP 2222510A JP 22251090 A JP22251090 A JP 22251090A JP H04106986 A JPH04106986 A JP H04106986A
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- semiconductor film
- range
- group
- carrier concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 239000002994 raw material Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 14
- GZUXJHMPEANEGY-UHFFFAOYSA-N bromomethane Chemical group BrC GZUXJHMPEANEGY-UHFFFAOYSA-N 0.000 claims description 12
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 11
- 229910052740 iodine Inorganic materials 0.000 claims description 11
- 239000011630 iodine Substances 0.000 claims description 11
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 7
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052794 bromium Inorganic materials 0.000 claims description 7
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical group IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 claims description 7
- 229940102396 methyl bromide Drugs 0.000 claims description 6
- 150000001347 alkyl bromides Chemical class 0.000 claims description 3
- 150000001351 alkyl iodides Chemical class 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 229910021476 group 6 element Inorganic materials 0.000 claims 3
- 230000007547 defect Effects 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 10
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 6
- 229910000058 selane Inorganic materials 0.000 description 6
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- KURZCZMGELAPSV-UHFFFAOYSA-N [Br].[I] Chemical compound [Br].[I] KURZCZMGELAPSV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- HVTICUPFWKNHNG-UHFFFAOYSA-N iodoethane Chemical compound CCI HVTICUPFWKNHNG-UHFFFAOYSA-N 0.000 description 2
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- KRHPBWNETCEFGS-UHFFFAOYSA-N 4-methyl-n-methyl-n-(2-phenyl-2h-pyrazol-3-yl)benzenesulfonamide Chemical compound C=1C=C(C)C=CC=1S(=O)(=O)N(C)C1=CC=NN1C1=CC=CC=C1 KRHPBWNETCEFGS-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000010944 pre-mature reactiony Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ｎ型半導体膜、その製造方法及びそれを用い
た半導体装置に係り、特にｎ型ＺｎＳＳｅ半導体膜、そ
の製造方法及びそれを用いた平導体装置に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an n-type semiconductor film, a method for manufacturing the same, and a semiconductor device using the same, and particularly relates to an n-type ZnSSe semiconductor film, a method for manufacturing the same, and a semiconductor device using the same. This paper relates to a flat conductor device.
ＩＩ−ＶＩ族化合物半導体であるｎ型Ｚ ｎ Ｓ ｘＳ
ｅ□−、（０≦ｘく１）膜は、青色発光素子材料として
注目されている。この材料系でｐｈ１合を形成し、電流
注入による高輝度発光素子を作製するためには、良好な
電気特性を有するρ型、ｎ壁画伝導型のｚ ｎ ＳＸＳ
１１−ｘ （０≦Ｘ〈１）膜が必要不可欠である。n-type Z n S x S, which is a II-VI group compound semiconductor
The e□-, (0≦x1) film is attracting attention as a material for blue light emitting devices. In order to form a ph1 combination with this material system and produce a high-brightness light emitting device by current injection, it is necessary to use z n SXS of ρ type and n wall conduction type, which have good electrical properties.
11-x (0≦X<1) film is essential.
ｎ型ｚｎＳｅ膜の製造方法は、ジャパニーズジャーナル
オブ アプライド フィジックス。The method for manufacturing n-type znSe film is described in the Japanese Journal of Applied Physics.
第２７巻第２号第Ｌ２５１頁〜第Ｌ２５３頁（ｔ９ｇ８
） （Ｊｐｎ、 Ｊ、Ａｐｐｌ、 Ｐｈｙｓ、 Ｖｏｌ
、 ２７． Ｎ（１２，１９８ｇ、 ｐｐＬ２５１〜
Ｌ２５３）に開示されている。これによると、ｎ族元素
の原料にジエチル亜鉛（ＤＥＺ）、ＶＪ族元素の原料に
セレン化水素（Ｈ２Ｓｅ）を用いて、モル流量比（Ｈ２
Ｓｅ）／ ［ＤＥＺ）≦１６．反応時圧力４０ Ｔｏｒ
ｒでｎ型Ｚｎ５ｅ膜を成長させている。また、ヨウ素原
料としてヨウ化エチルが用いられている。Volume 27, Issue 2, Pages L251 to L253 (t9g8
) (Jpn, J, Appl, Phys, Vol.
, 27. N (12,198g, ppL251~
L253). According to this, when diethyl zinc (DEZ) is used as the raw material for the N group element and hydrogen selenide (H2Se) is used as the raw material for the VJ group element, the molar flow rate ratio (H2Se) is used as the raw material for the VJ group element.
Se)/[DEZ)≦16. Pressure during reaction: 40 Torr
An n-type Zn5e film is grown at r. Additionally, ethyl iodide is used as an iodine raw material.
なお、室温で良好なｐ型伝導性を有する窒素トープのＺ
ｎＳｘＳｅ１−ｘ （０≦ｘ＜１）膜及びその製造方法
については、本願発明者等により、すでに特願平１−５
７７９７として出頭されている。In addition, nitrogen-topped Z has good p-type conductivity at room temperature.
The nSxSe1-x (0≦x<1) film and its manufacturing method have already been disclosed in Japanese Patent Application No. 1-5 by the present inventors.
He has been cited as 7797.
上記従来の製造方法においては、Ｈ２ＳｅとＤＥＺは非
常に反応性が高く、また、ヨウ化エチルとＤＥＺ及びＨ
２Ｓｅも反応性が比較的高いために、結晶性の良好でな
いＺｎ５ＸＳ ｅｌ−ｘ： Ｉ膜しか得られないという
問題があった。In the conventional production method described above, H2Se and DEZ have very high reactivity, and ethyl iodide, DEZ and H
Since 2Se also has relatively high reactivity, there is a problem in that only a Zn5XS el-x:I film with poor crystallinity can be obtained.
本発明の目的は、結晶中の欠陥の少ない、良好な電気特
性を有するｎ型Ｚ ｎ Ｓ、Ｓ ｅｌ−８（０≦Ｘく１
）半導体膜を提供することにある。The object of the present invention is to produce n-type Z n S, S el-8 (0≦X1
) To provide a semiconductor film.
本発明の第２の目的は、その半導体膜の製造方法を提供
することにある。A second object of the present invention is to provide a method for manufacturing the semiconductor film.
本発明の第３の目的は、その半導体膜を用いたｐｎ接合
を持った半導体装置を提供することにある。A third object of the present invention is to provide a semiconductor device having a pn junction using the semiconductor film.
上記目的は、（１）式Ｚ ｎ ＳｘＳ ｅｌ−ｘ （た
だしＸは０≦ｘ ＜ １の範囲の値である）で表わされ
、室温でＩ Ｘ １０１Ｓａｌ＋−３以上Ｉ Ｘ Ｉ
Ｏ”ｃｍ−３以下の範囲のキャリア濃度を有するｎ型半
導体膜において、該ｎ型半導体膜は８．３Ｘ１０−”Ω
■以丁の比抵抗を有することを特徴とするｒ）型半導体
摸、（２）式Ｚ ｎ Ｓｘｓ ｅ、−ｘ （ただしＸは
Ｏ≦ｘ＜Ｌの範囲の値である）で表わされ、室温で１×
１０１６ｃｍ−’以上Ｉ Ｘ １０１７ｃｍ−３以下ノ
範”ＪＡノキャリア濃度を有するｎ型半導体膜において
、該ｎ”１半導体膜は１．０×１０’−１Ω■以下の比
抵抗を仔することを特徴とするｎ型半導体膜、（３；式
Ｚ ｎ ＳｘＳ ｅｌ−ｘ （ただしＸはＯ≦ｘ ＜
１の範囲の値である）で表わされ、室温でＩ Ｘ １０
”ｃｍ−”以上Ｉ Ｘ １０１＋ｃｍ−３以下の範囲
のキャリア濃度を有するｎ型半導体膜において、該ｎ型
半導体膜は１．２Ｘ１０−２Ω国以下の比抵抗を有する
ことを特徴とするｎ型半導体膜、（４）式Ｚｎ５ｘＳｅ
□−Ｘ（ただしＸはＯ≦ｘ ＜ １の範囲の値である）
で表わされ、室温で１×１０”９■−１以上１×１０”
Ｏｎ”−３以下の範囲のキャリア濃度を有するｎ型半導
体膜において、該ｎ型半導体膜は２．０×１０−３Ω■
以下の比抵抗を有することを特徴とするｎ型半導体膜、
（５）式Ｚ ｎ Ｓ ｘＳ ｅ １．−８（ただしＸは
Ｏ≦ｘ ＜ １の範囲の値である）で表わされ。The above purpose is expressed by the formula (1) ZnSxSel-x (where X is a value in the range of 0≦x<1), and at room temperature IX101Sal+-3 or more IXI
In an n-type semiconductor film having a carrier concentration in the range of O"cm-3 or less, the n-type semiconductor film has a carrier concentration of 8.3X10-"Ω
■An r) type semiconductor model characterized by having a specific resistance of , 1× at room temperature
In an n-type semiconductor film having a carrier concentration in the range of 1016cm-' or more I Characteristic n-type semiconductor film, (3; Formula Z n SxS el-x (where X is O≦x<
1) and at room temperature I x 10
An n-type semiconductor film having a carrier concentration in the range of "cm-" to I x 101+cm-3, characterized in that the n-type semiconductor film has a specific resistance of 1.2X10-2Ω or less. Film, (4) formula Zn5xSe
□-X (However, X is a value in the range O≦x<1)
It is expressed as 1×10”9■-1 or more 1×10” at room temperature.
In an n-type semiconductor film having a carrier concentration in the range of On''-3 or less, the n-type semiconductor film has a resistance of 2.0×10-3Ω■
An n-type semiconductor film characterized by having the following specific resistance:
(5) Formula Z n S x S e 1. −8 (where X is a value in the range O≦x<1).
室温でｌ Ｘ Ｉ Ｏ１ｊｃｘｎ−”以上Ｌ Ｘ １０
２０ｃｎ−３以下の範囲のキャリア濃度を有するｎ型半
導体膜において、該ｎ型半導体膜は２．５Ｘ１０−４Ω
ｌ以下の比抵抗を有することを特徴とするｎ型半導体膜
、（６）上記１から５のいずれかに記載のｎ型半導体膜
において、ドーパントは臭素及びヨウ素の少なくとも１
元素であることを特徴とするｎ型′Ｐ−導体膜により達
成される。l X I O1jcxn-" or more L X 10 at room temperature
In an n-type semiconductor film having a carrier concentration in the range of 20cn-3 or less, the n-type semiconductor film has a resistance of 2.5X10-4Ω.
(6) In the n-type semiconductor film according to any one of 1 to 5 above, the dopant is at least one of bromine and iodine.
This is achieved by an n-type 'P-conductor film, which is characterized in that it is an element.
上記第２の目的は、（８）■族元素の原料と、■族元素
の原料と、ドーパント原料とを用いて気相成長法により
基板上にＩＩ−ＶＩ族化合物半導体を結晶成長させるｎ
型半導体膜の製造方法において、上記■族元素と上記■
族元素の原料供給比を、結晶成長速度が、■族元素の原
料の供給量に律速される条件とし、かつ結晶成長時の反
応槽内圧力が１０−３Ｔｏｒｒ以下の条件の下にｎ型Ｚ
ｎ Ｓ ｘｓ ｅ １−ｘ（ただしＸは０≦ｘ ＜
１の範囲の値である）で表わされるｎ型半導体膜を結晶
成長させることを特徴とするｎ型半導体膜の製造方法、
（９）上記８記載のｎ型半導体膜の製造方法において、
上記ドーパント原料は、ヨウ化アルキル及び臭化フルキ
ルの少なくとも一種であることを特徴とするｎ型半導体
膜の製造方法、（１０）上記９記載のｎ型半導体膜の製
造方法において、上記ヨウ化アルキルはヨウ化メチルで
あることを特徴とするｎ型半導体膜の製造方法、（１１
）上記９記載のｎ型半導体膜の製造方法において、上記
臭化アルキルは臭化メチルであることを特徴とするｎ型
半導体膜の製造方法、（１２）上記８から１１のいずれ
かに記載のｎ型半導体膜の製造方法において、上記基板
の温度は２５０℃から４５０℃の範囲の温度でｎ型半導
体膜を結晶成長させることを特徴とするｎ型半導体膜の
製造方法により達成される。The second purpose is to (8) grow crystals of a group II-VI compound semiconductor on a substrate by vapor phase growth using a group Ⅰ element raw material, a group Ⅰ element raw material, and a dopant raw material.
In the method for manufacturing a type semiconductor film, the above-mentioned group (■) element and the above-mentioned (■)
The n-type Z
n S xs e 1-x (X is 0≦x<
A method for producing an n-type semiconductor film, the method comprising crystal-growing an n-type semiconductor film having a value in the range of 1.
(9) In the method for manufacturing an n-type semiconductor film according to 8 above,
(10) A method for producing an n-type semiconductor film as described in 9 above, wherein the dopant raw material is at least one of alkyl iodide and furkyl bromide; is methyl iodide, a method for producing an n-type semiconductor film, (11)
) The method for producing an n-type semiconductor film as described in 9 above, wherein the alkyl bromide is methyl bromide, (12) the method for producing an n-type semiconductor film as described in any one of 8 to 11 above. In the method for manufacturing an n-type semiconductor film, the temperature of the substrate described above is achieved by crystal growth of the n-type semiconductor film at a temperature in the range of 250°C to 450°C.
上記第３のし的は、（７）上記１から６のいずれかに記
載のｎ型半導体膜と、式（Ｚ ｎ ｙＣｄ ０．−Ｙ）
（Ｓ ｚＳ ｅ ｔＴ ｅ １−ｚ−ｔ） （ただし
ｙ、ｚ、ｔはそれぞれ０≦ｙ≦１．０≦ｚ＋ｔ≦１．０
≦Ｚ≦１．０≦ｔ≦１の範囲の値である）ｎ型半導体膜
とを積層したｐｎ接合を基板上に有することを特徴とす
る半導体装置により達成される。The third target is (7) the n-type semiconductor film according to any one of 1 to 6 above and the formula (Z n yCd 0.-Y).
(S zS e tT e 1-z-t) (However, y, z, and t are each 0≦y≦1.0≦z+t≦1.0
This is achieved by a semiconductor device characterized in that it has a pn junction on a substrate, in which n-type semiconductor films (with a value in the range of ≦Z≦1.0≦t≦1) are stacked.
本発明のｎ型半導体膜の製造方法では、結晶成長時の圧
力をｌ ０−ＪＴｏｒｒ以下、好ましくは１０Ｔｏｒｒ
以下にする。また、ある程度の結晶成長速度を得るため
には１０−５Ｔｏｒｒ以上の圧力とすることが好ましい
。また、結晶成長時の基板温度は、２５０℃以上４５０
℃以下の範囲が好ましい。In the method for manufacturing an n-type semiconductor film of the present invention, the pressure during crystal growth is 10-JTorr or less, preferably 10Torr or less.
Do the following. Further, in order to obtain a certain level of crystal growth rate, it is preferable to use a pressure of 10 −5 Torr or more. In addition, the substrate temperature during crystal growth is 250°C or higher and 450°C.
The range below ℃ is preferable.
さらに、Ｚ ｎ Ｓ ｘ Ｓ ｅニー８膜のＸの値は○
≦ｘ ＜ １の範囲の値であるが、基板との格子定数を
揃えるためには０≦Ｘ≦０．５の範囲の値であることが
好ましい。Furthermore, the value of X of Z n S x S e knee 8 film is ○
Although the value is in the range of ≦x<1, the value is preferably in the range of 0≦X≦0.5 in order to align the lattice constant with the substrate.
気相成長法によるＺ ｎ ＳｘＳ ｅｌ−ｘ （０≦Ｘ
〈１）膜の結晶成長時に、■族元素の原料が■族元素の
原料よりも過剰に供給されている場合、■族元素の空孔
を生成しやすい。本発明においてはこのような条件下に
■族元素の原料を供給することが好ましい。Z n SxS el-x (0≦X
(1) During crystal growth of the film, if the raw material of the group (2) element is supplied in excess of the raw material of the group (2) element, vacancies of the group (2) element are likely to be generated. In the present invention, it is preferable to supply the group (I) element raw material under such conditions.
このａ族元素の原料が■族元素の原料よりも過剰に供給
されている条件というのは、各結晶成長装置の構造や形
状に依存する。いま、■族元素の原料の供給量を一定と
してＺｎＳＳｅ膜を成長させ、■族元素の原料の供給量
と成長速度の関係を調へると、■族元素の原料の供給量
が少ない範囲では成長速度は■族元素の原料の供給量に
比例する。■族元素の原料の供給量がある量を越えると
、成長速度は■族元素の原料の供給量に依存せず、一定
となる。前者が■族元素の原料の供給律速の範囲であり
、■族元素の原料が■族元素の原料よりも過剰に供給さ
れている条件に相当する。The conditions under which the raw materials for group A elements are supplied in excess of the raw materials for group Ⅰ elements depend on the structure and shape of each crystal growth apparatus. Now, if we grow a ZnSSe film with the supply amount of the group ■ element raw material constant and investigate the relationship between the supply amount of the group ■ element raw material and the growth rate, we find that in the range where the supply amount of the group ■ element raw material is small, The growth rate is proportional to the supply amount of the raw material of the group ■ element. When the supply amount of the group (III) element raw material exceeds a certain amount, the growth rate does not depend on the supply amount of the group (III) element raw material and becomes constant. The former is the range that determines the rate of supply of the raw material for the group (2) element, and corresponds to a condition in which the raw material for the group (2) element is supplied in excess of the raw material for the group (2) element.
■族元素の原料の供給律速の範囲は、各結晶成長装置の
構造や形状に依存するため、外部から供給した■族元素
及び■族元素の原料の供給量の比と直接は関係しないが
、多くの装置では［■族元素の原料／■族元素の原料］
の値が５以下であり、より好ましくは４以下である。ま
た、この比の値があまり小さくても結晶成長速度が遅く
なるので。The rate-determining range of supply of group (III) element raw materials depends on the structure and shape of each crystal growth apparatus, so it is not directly related to the ratio of the supply amount of group (III) elements and group (III) elements supplied from the outside. In many devices, [raw material of group ■ element/raw material of group ■ element]
The value of is 5 or less, more preferably 4 or less. Also, if the value of this ratio is too small, the crystal growth rate will be slow.
０．１以上であることが好ましい。It is preferable that it is 0.1 or more.
前述のように、気相成長法によるＺ ｎ Ｓ ｘＳｅ□
−、（０≦ｘく１）膜の結晶成長時に、■族元素の原料
が■族元素の原料よりも過剰に供給されている場合、■
族元素の空孔を生成しやすい。As mentioned above, Z n S x Se□ by vapor phase growth method
−, (0≦x×1) When the raw material of the group ■ element is supplied in excess than the raw material of the group ■ element during crystal growth of the film, ■
Easily generates vacancies of group elements.
この■族元素の原料が■族元素の原料よりも過剰に供給
されている条件というのは、■族元素の原料の供給量を
一定とし、■族元素の原料の供給量を変化させたとき、
結晶成長速度が■族元素の原料の供給量に比例する範囲
、すなわち、■族元素の原料の供給律速の範囲である。The condition under which the raw materials for group ■ elements are supplied in excess than the raw materials for group ■ elements is when the supply amount of raw materials for group ,
This is the range in which the crystal growth rate is proportional to the supply amount of the raw material for the group Ⅰ element, that is, the range that determines the rate of supply of the raw material for the group Ⅰ element.
このように結晶成長速度が■族元素の原料の供給量に律
速されでいる条件の下に■族元素の原料を供給した場合
、■族元素の格子位置に■族元素が置換され、この置換
された■族元素がトナーとして作用することにより、効
率良く低抵抗のｎ型半導体層が得られる。When a raw material for a group ■ element is supplied under conditions in which the crystal growth rate is determined by the amount of raw material supplied for the group ■ element, the group ■ element is substituted at the lattice position of the group By the group Ⅰ element acting as a toner, an n-type semiconductor layer with low resistance can be obtained efficiently.
また、結晶成長中の成長室の圧力は低いほど■族元素の
格子位置に空孔が生成しやすく、その上、過剰な反応（
ｐｒｅｍａｔｕｒｅ ｒｅａｃｔｉｏｎ）を抑制し、結
晶性を改善できるので良好なｎ型伝導層を形成できる。In addition, the lower the pressure in the growth chamber during crystal growth, the more likely vacancies are generated in the lattice positions of group
Premature reaction) can be suppressed and crystallinity can be improved, so a good n-type conductive layer can be formed.
■族元素がＳｅであり、ドーパントとしてヨウ素を単独
に用いる場合、Ｓｅ位置を置換するヨウ素は、原子価半
径がＳｅよりも１４，７％大きいために、添加濃度の増
加に伴ない結晶中に欠陥が導入されやすい。そのため臭
素を同時に添加することが好ましい。両者の好ましい混
合比は、臭素５９％〜１００％、ヨウ素０％〜４１％（
原子％、以下同じ）の範囲であり、より好ましい混合比
は、臭素８６％〜９３％、ヨウ素７％〜１４％の範囲で
ある。前者が格子不整５％の範囲、後者が格子不整０．
５％の範囲である。特に、臭素８９．５％とヨウ素１０
．５％を含有するＺ ｎ ＳｘＳ ｅよ。When the Group Ⅰ element is Se and iodine is used alone as a dopant, the iodine substituting the Se position has a valence radius 14.7% larger than that of Se, so as the dopant concentration increases, the iodine enters the crystal. Defects are easily introduced. Therefore, it is preferable to add bromine at the same time. The preferred mixing ratio of both is 59% to 100% bromine and 0% to 41% iodine (
A more preferable mixing ratio is 86% to 93% of bromine and 7% to 14% of iodine. The former is a lattice mismatch range of 5%, and the latter is a lattice mismatch range of 0.
It is in the range of 5%. In particular, bromine 89.5% and iodine 10%
．． Z n SxS e containing 5%.
（０≦ｘく１）膜は良好な電気特性を有する。(0≦x×1) The film has good electrical properties.
（実施例１）
以下、本発明の一実施例を示す。第１図は、有機金属分
子線エピタキシー（ＭＯＭＢＥ）装置の概略図である。(Example 1) An example of the present invention will be shown below. FIG. 1 is a schematic diagram of a metal organic molecular beam epitaxy (MOMBE) apparatus.
チャンバ１はポンプ２により超高真空まで排気される。The chamber 1 is evacuated to an ultra-high vacuum by a pump 2.
チャンバ１内には、基板サセプタ３に保持された基板４
と、ガスセル５．６．７．８．９が配置される。恒温槽
２ｏで一定温度に保たれたシリンダ１５．１８．１９及
びボンベ１６．１７からマスフローコントローラ１ｏ、
１１．１２．１３．１４を通してガスセル５．６．７．
８．９に原料ガスが導入され、このガスセルからガスが
基板４に向けて照射される。基板サセプタ３は抵抗加熱
によりｓ ｏ ｏ ℃まで加熱できる。Inside the chamber 1 is a substrate 4 held by a substrate susceptor 3.
and gas cells 5.6.7.8.9 are arranged. Mass flow controller 1o from cylinders 15, 18, 19 and cylinders 16, 17 kept at a constant temperature in constant temperature bath 2o,
11.12.13.14 through gas cell 5.6.7.
A raw material gas is introduced at 8.9, and the gas is irradiated toward the substrate 4 from this gas cell. The substrate susceptor 3 can be heated up to s o o C by resistance heating.
ガスセル５〜９は抵抗加熱により１０００’Ｃまで加熱
でき、ガスを基板に到達する前に予め分解することが可
能である。The gas cells 5-9 can be heated up to 1000'C by resistance heating, making it possible to decompose the gas before it reaches the substrate.
以上の装置を用いて、シリンダ１５に■族元素の原料と
してジメチル亜鉛（（ＣＨ３）３Ｚｎ、以下ＤＭＺと略
す）、ボンベ１６に■族元素の原料としてセレン化水素
（Ｈ２Ｓｅ）、シリンダ１８゜１９にドーパントである
■族元素の原料としてヨウ化メチル、臭化メチルを入れ
て、Ｚｎ５ｅ：Ｉ、Ｚｎ５ｅ：Ｂｒ、Ｚｎ５ｅ： Ｉ、
Ｂｒ膜の結晶成長をそれぞれ行い、その特性を測定した
。基板４にはＧａＡｓを用いた。各原料ガスは、３５０
’Ｃ〜８００℃に加熱したガスセルを通して成長室へ導
入した。ＤＭＺとＨ２Ｓｅの流量はそれぞれ２０．４３
μｍｏｌ／ｍｉｎであり、この条件では、成長速度が■
族元素の原料の供給量によって律速される。このとき、
アンドープのＺｎ５ｅの伝導型はｎ型である。これは、
■族元素の原料過剰の条件下では■族原子の格子位置に
空孔を生しやすく、Ｓｅ空孔がトナーとして作用してい
ることによるものである。Using the above apparatus, dimethylzinc ((CH3)3Zn, hereinafter abbreviated as DMZ) is placed in the cylinder 15 as a raw material for group Ⅰ elements, hydrogen selenide (H2Se) is placed in cylinder 16 as a raw material for group Ⅰ elements, and cylinders 18, 19 By adding methyl iodide and methyl bromide as raw materials for the group ■ elements which are dopants, Zn5e: I, Zn5e: Br, Zn5e: I,
Crystal growth of each Br film was performed and its characteristics were measured. GaAs was used for the substrate 4. Each raw material gas is 350
It was introduced into the growth chamber through a gas cell heated to 800°C. The flow rates of DMZ and H2Se are 20.43 each.
μmol/min, and under these conditions, the growth rate is
The rate is determined by the supply amount of group element raw materials. At this time,
The conductivity type of undoped Zn5e is n-type. this is,
This is because vacancies are likely to be formed at the lattice positions of group ① atoms under conditions where there is an excess of raw materials of group Ⅰ elements, and the Se vacancies act as toner.
表−にＺｎ５ｅ：Ｉ膜の結晶成長時の基板温度、ヨウ化
メチルとＨ２Ｓｅの流量比（（１）／ （Ｓｅ）と記
載）及び圧力を、表２に得た膜の特性を示す。Table 2 shows the substrate temperature, flow rate ratio of methyl iodide and H2Se (written as (1)/(Se)), and pressure during crystal growth of the Zn5e:I film, and Table 2 shows the characteristics of the film obtained.
Ｎａ 基板温度
（’Ｃ）
ｌ ３５０
ｖ３５０
（以下余白）
表−
（Ｉ）／ （Ｓｅ） 圧力
（Ｔｏｒｒ）
０．０１ １×１０−’
０．０２ １×１０−’
０．２ １×１０−４
２２Ｘ１０−’
２０ ５ｘｌＯ−’
表−
Ｎａ キャリア濃度 比抵抗 移動度（ｃｍ−
３） （ΩＣ２１１） （ｔｙｊ ／ Ｖ
ｓ ）ｉ １０１５〜１０” ≦８．３×１０
−１＞７００ｉｉ １０”〜１０１７ ≦１．Ｏ
ｘ １０−” ＞６３０市 １０１７〜１０１９
≦１．２Ｘ１０−２＞５００ｉｖ １０”−１
０” ≦２．Ｏｘ １０−’ ＞ ３００■１０
１ｇ〜１０２０ ≦２，５ Ｘ １０−４＞ ２５０
第２図に、このｎ型Ｚｎ５ｅ膜の室温でのキャリア濃度
と移動度との関係を示す。（ａ）は上記表−１表二に示
したドーパントとしてヨウ素単独のもの、（ｂ）はドー
パントとしてヨウ素（１０％）−臭素（９０％）混合添
加のものである。後者は、ドーパント原料としてヨウ化
メチル（１１％）−臭化メチル（８９％）混合原料を用
いて作製した。また同図中に従来例を○で示した。これ
から明らかに、本発明のｎ型Ｚｎ５ｅ膜は優れた特性が
得られたことが分かる。Na Substrate temperature ('C) l 350 v350 (blank below) Table - (I) / (Se) Pressure (Torr) 0.01 1x10-' 0.02 1x10-' 0.2 1x10- 4 22X10-' 20 5xlO-' Table - Na Carrier concentration Specific resistance Mobility (cm-
3) (ΩC211) (tyj / V
s)i 1015~10” ≦8.3×10
-1>700ii 10”~1017 ≦1.O
x 10-” >630 City 1017-1019
≦1.2X10-2>500iv 10”-1
0" ≦2.Ox 10-'> 300■10
1g~1020 ≦2,5 X 10-4> 250
FIG. 2 shows the relationship between carrier concentration and mobility of this n-type Zn5e film at room temperature. (a) is a case in which iodine is used alone as a dopant as shown in Table 1 and Table 2 above, and (b) is a case in which a mixture of iodine (10%) and bromine (90%) is added as a dopant. The latter was produced using a mixed raw material of methyl iodide (11%) and methyl bromide (89%) as a dopant raw material. In addition, the conventional example is indicated by a circle in the same figure. It is clear from this that the n-type Zn5e film of the present invention has excellent characteristics.
また、同様にして、硫黄（Ｓ）原料として、硫化水素（
Ｈ２Ｓ）をボンベ１７から導入し、ＺｎＳ、Ｓ ｅｌ−
ｘ（０≦Ｘ〈１）膜を作製し、トービンクを行った。得
られたｎ型半導体膜も優れた特性を示した。Similarly, hydrogen sulfide (
H2S) was introduced from cylinder 17, and ZnS, Sel-
x (0≦X<1) film was prepared and Tobink was performed. The obtained n-type semiconductor film also showed excellent characteristics.
従来の方法により製造したヨウ素が添加されたＺｎ５ｅ
膜は結晶中に欠陥が導入され、フォトルミネッセンスス
ペクトル中に深い準位からの発光が見られるが１本実施
例のｎ型半導体膜のフォトルミネッセンススペクトルに
は、４．７〜３００ｋにおいて深い準位からの発光は抑
制されていた。Iodine-doped Zn5e produced by conventional method
Defects are introduced into the crystal of the film, and light emission from a deep level can be seen in the photoluminescence spectrum. However, the photoluminescence spectrum of the n-type semiconductor film of this example shows that a deep level is observed between 4.7 and 300k. The luminescence from was suppressed.
（実施例２）
第３図は、本発明の一実施例の半導体発光素子の断面模
式図である。実施例１とほぼ同様な方法で、ｐ型ＧａＡ
ｓ（１００）基板２１上に、窒素を添加したｐ型Ｚ ｎ
Ｓ［１，０７３ｅｏ、ｑｙ層２２、臭素−ヨウ素（８
９：１１）をドープしたｎ型ＺｎＳ ｏ、ｏｔｓ ｅｏ
、９３層２３を形成した。Ｚｎ原料、５ｅｆｊＫ料とし
ては、それぞれＤＭＺ、Ｈ２Ｓｅを用い、ｎ型ドーパン
ト原料としてはヨウ化メチル及び臭化メチル、ｐ型ドー
パントとしてはアンモニアを用いた。基板温度３５０℃
で、ＤＭＺ、Ｈ２Ｓｅ、Ｈ２Ｓ、ヨウ化メチル及び臭化
メチルの流量はそれぞれ２０．４１．２．５．４０μｍ
ｏｌ／ ｍ ｉ ｎである。アンモニアは４３μｍｏｌ
／ｍｉｎである。(Example 2) FIG. 3 is a schematic cross-sectional view of a semiconductor light emitting device according to an example of the present invention. Using almost the same method as in Example 1, p-type GaA
p-type Zn doped with nitrogen on the s(100) substrate 21
S[1,073eo, qy layer 22, bromine-iodine (8
9:11) doped n-type ZnSO, otseo
, 93 layers 23 were formed. DMZ and H2Se were used as the Zn raw material and 5efjK material, respectively, methyl iodide and methyl bromide were used as the n-type dopant raw material, and ammonia was used as the p-type dopant. Substrate temperature 350℃
The flow rates of DMZ, H2Se, H2S, methyl iodide, and methyl bromide are 20.41.2.5.40 μm, respectively.
ol/min. Ammonia is 43μmol
/min.
この条件下では、■族元素の原料が不足しているため、
ヨウ素（臭素）はＳｅ原子の格子位置に置換されやすく
、しかも、格子欠陥の生成が抑制されているので、比抵
抗４Ｘ１０−’Ω】、キャリア濃度、３×１０１ｇ、移
動度５２０ ｃｉ ／ Ｖ ｓのｎ型Ｚ ｎ Ｓｏ、０
７Ｓ ｅｏ、ｑｘが得られ、良好なｐｎ接合が得られた
。Under these conditions, there is a shortage of raw materials for group ■ elements, so
Iodine (bromine) is easily substituted at the lattice positions of Se atoms, and the generation of lattice defects is suppressed, so the specific resistance is 4 x 10-'Ω], the carrier concentration is 3 x 101 g, and the mobility is 520 ci/V s. n-type Z n So, 0
7S eo, qx were obtained, and a good pn junction was obtained.
以下、通常の方法により電極２４を形成し、半導体発光
素子とした。Thereafter, electrodes 24 were formed using a conventional method to obtain a semiconductor light emitting device.
窒素を添加したｐ型Ｚ ｎ Ｓ ｏ、ｏ７Ｓ ｅ Ｏ，
９３層２２に代えて、同様に窒素を添加したｐ型Ｚｎ５
ｅＷ！ｊ、ｐ型ＺｎＴｅ層、ｐ型ＣｄＴｅ層、ｎ型Ｚｎ
Ｓ ｏ、ｏ＆ｓ ｅｎ、９４層、ｐ型Ｚ ｎ Ｓ ｏ、
ｂｙ Ｓ ｅ ａ、ｉ７Ｍ、ｐ型Ｃｄ Ｑ、４３ Ｚ
ｎ Ｏ，５？ Ｓ層を用いたが同様に良好なｐｎ接合が
得られた。Nitrogen-doped p-type Z n So, o7S e O,
93 layer 22, p-type Zn5 similarly added with nitrogen
eW! j, p-type ZnTe layer, p-type CdTe layer, n-type Zn
So, o&s en, 94 layers, p-type Z n So,
by S e a, i7M, p-type Cd Q, 43 Z
n O, 5? Although the S layer was used, a similarly good pn junction was obtained.
本発明によれば、結晶中の欠陥の少ない、良好な電気特
性を有するｎ型Ｚ ｎ ＳｘＳ ｅ 、−ｘ （０≦Ｘ
く１）半導体膜を得ることができた。また、その半導体
膜の製造方法が明らかになった。さらにまた、その半導
体膜を用いて、良好な電気特性を有するｐｎ接合半導体
装置を得る二とができた。According to the present invention, n-type Z n SxS e , -x (0≦X
(1) A semiconductor film could be obtained. In addition, a method for manufacturing the semiconductor film has been revealed. Furthermore, by using the semiconductor film, it was possible to obtain a pn junction semiconductor device having good electrical characteristics.
第１図は本発明を行なうためのＭ Ｏ′ｖｉ Ｂ Ｅ装
置の一例を示す概略図、第２図は本発明を説明するため
のキャリア濃度と移動度の関係を示す図、第３図は本発
明の一実施例の半導体発光素子の構造を示す断面模式図
である。
１・・・チャンバ ２・ポンプ３・・基板サセ
プタ ４．２１・・基板５．６，７．８，９・・・
ガスセル
１０．１１．１２．１３．１４ ・マスフローコントロ
ーラ
１５．１８．１９・・シリンダー
１６．１７・・ボンベ
２０ ・恒温槽
２２ ｐ型ＺｎＳ。
２３− ｎ型ＺｎＳ。
２４・・・電極FIG. 1 is a schematic diagram showing an example of an M O'vi BE apparatus for carrying out the present invention, FIG. 2 is a diagram showing the relationship between carrier concentration and mobility for explaining the present invention, and FIG. 3 is a diagram showing the relationship between carrier concentration and mobility. 1 is a schematic cross-sectional view showing the structure of a semiconductor light emitting device according to an embodiment of the present invention. 1...Chamber 2.Pump 3...Substrate susceptor 4.21...Substrate 5.6, 7.8, 9...
Gas cell 10.11.12.13.14 Mass flow controller 15.18.19 Cylinder 16.17 Cylinder 20 Constant temperature chamber 22 P-type ZnS. 23- n-type ZnS. 24...electrode
Claims (1)
＜１の範囲の値である）で表わされ、室温で１× １０＾１＾５ｃｍ＾−＾３以上１×１０＾１＾６ｃｍ＾
−＾３以下の範囲のキャリア濃度を有するｎ型半導体膜
において、該ｎ型半導体膜は８．３×１０＾−＾１Ωｃ
ｍ以下の比抵抗を有することを特徴とするｎ型半導体膜
。 ２、式ＺｎＳｘＳｅ＿１＿−＿ｘ（ただしｘは０≦ｘ＜
１の範囲の値である）で表わされ、室温で１× １０＾１＾６ｃｍ＾−＾３以上１×１０＾１＾７ｃｍ＾
−＾３以下の範囲のキャリア濃度を有するｎ型半導体膜
において、該ｎ型半導体膜は１．０×１０＾−＾１Ωｃ
ｍ以下の比抵抗を有することを特徴とするｎ型半導体膜
。 ３、式ＺｎＳｘＳｅ＿１＿−＿ｘ（ただしｘは０≦ｘ＜
１の範囲の値である）で表わされ、室温で１× １０＾１＾７ｃｍ＾−＾３以上１×１０＾１＾８ｃｍ＾
−＾３以下の範囲のキャリア濃度を有するｎ型半導体膜
において、該ｎ型半導体膜は１．２×１０＾−＾２Ωｃ
ｍ以下の比抵抗を有することを特徴とするｎ型半導体膜
。 ４、式ＺｎＳｘＳｅ＿１＿−＿ｘ（ただしｘは０≦ｘ＜
１の範囲の値である）で表わされ、室温で１× １０＾１＾８ｃｍ＾−＾３以上１×１０＾１＾９ｃｍ＾
−＾３以下の範囲のキャリア濃度を有するｎ型半導体膜
において、該ｎ型半導体膜は２．０×１０＾−＾３Ωｃ
ｍ以下の比抵抗を有することを特徴とするｎ型半導体膜
。 ５、式ＺｎＳｘＳｅ＿１＿−＿ｘ（ただしｘは０≦ｘ＜
１の範囲の値である）で表わされ、室温で１× １０＾１＾９ｃｍ＾−＾３以上１×１０＾２＾０ｃｍ＾
−＾３以下の範囲のキャリア濃度を有するｎ型半導体膜
において、該ｎ型半導体膜は２．５×１０＾−＾４Ωｃ
ｍ以下の比抵抗を有することを特徴とするｎ型半導体膜
。 ６、請求項１から５のいずれかに記載のｎ型半導体膜に
おいて、ドーパントは臭素及びヨウ素の少なくとも１元
素であることを特徴とするｎ型半導体膜。 ７、請求項１から６のいずれかに記載のｎ型半導体膜と
、式（Ｚｎ＿ｙＣｄ＿１＿−＿ｙ）（Ｓ＿ｚＳｅ＿ｔＴ
ｅ＿１＿−＿２＿−＿ｔ）（ただしｙ、ｚ、ｔはそれぞ
れ０≦ｙ≦１、０≦ｚ＋ｔ≦１、０≦ｚ≦１、０≦ｔ≦
１の範囲の値である）ｐ型半導体膜とを積層したｐｎ接
合を基板上に有することを特徴とする半導体装置。 ８、II族元素の原料と、VI族元素の原料と、ドーパント
原料とを用いて気相成長法により基板上にII−VI族化合
物半導体を結晶成長させるｎ型半導体膜の製造方法にお
いて、上記II族元素と上記VI族元素の原料供給比を、結
晶成長速度が、VI族元素の原料の供給量に律速される条
件とし、かつ結晶成長時の反応槽内圧力が１０＾−＾３
Ｔｏｒｒ以下の条件の下にｎ型ＺｎＳ＿ｘＳｅ＿１＿−
＿ｘ（ただしｘは０≦ｘ＜１の範囲の値である）で表わ
されるｎ型半導体膜を結晶成長させることを特徴とする
ｎ型半導体膜の製造方法。 ９、請求項８記載のｎ型半導体膜の製造方法において、
上記ドーパント原料は、ヨウ化アルキル及び臭化アルキ
ルの少なくとも一種であることを特徴とするｎ型半導体
膜の製造方法。 １０、請求項９記載のｎ型半導体膜の製造方法において
、上記ヨウ化アルキルはヨウ化メチルであることを特徴
とするｎ型半導体膜の製造方法。 １１、請求項９記載のｎ型半導体膜の製造方法において
、上記臭化アルキルは臭化メチルであることを特徴とす
るｎ型半導体膜の製造方法。 １２、請求項８から１１のいずれかに記載のｎ型半導体
膜の製造方法において、上記基板の温度は２５０℃から
４５０℃の範囲の温度でｎ型半導体膜を結晶成長させる
ことを特徴とするｎ型半導体膜の製造方法。[Claims] 1. Formula ZnS_xSe_1_-_x (where x is 0≦x
<1) at room temperature from 1 x 10^1^5 cm^-^3 to 1 x 10^1^6 cm^
In an n-type semiconductor film having a carrier concentration in the range of -^3 or less, the n-type semiconductor film has a carrier concentration of 8.3 x 10^-^1 Ωc.
An n-type semiconductor film having a specific resistance of m or less. 2. Formula ZnSxSe_1_-_x (where x is 0≦x<
It is a value in the range of 1), and is expressed as 1 × 10^1^6 cm^-^3 or more 1 × 10^1^7 cm^ at room temperature.
In an n-type semiconductor film having a carrier concentration in the range of -^3 or less, the n-type semiconductor film has a carrier concentration of 1.0 x 10^-^1 Ωc.
An n-type semiconductor film having a specific resistance of m or less. 3. Formula ZnSxSe_1_-_x (where x is 0≦x<
It is a value in the range of 1), and is expressed as 1 × 10^1^7 cm^-^3 or more 1 × 10^1^8 cm^ at room temperature.
In an n-type semiconductor film having a carrier concentration in the range of −^3 or less, the n-type semiconductor film has a carrier concentration of 1.2×10^-^2Ωc
An n-type semiconductor film having a specific resistance of m or less. 4. Formula ZnSxSe_1_-_x (where x is 0≦x<
It is a value in the range of 1), and is expressed as 1 × 10^1^8 cm^-^3 or more 1 × 10^1^9 cm^ at room temperature.
In an n-type semiconductor film having a carrier concentration in the range of -^3 or less, the n-type semiconductor film has a carrier concentration of 2.0 x 10^-^3 Ωc.
An n-type semiconductor film having a specific resistance of m or less. 5. Formula ZnSxSe_1_-_x (where x is 0≦x<
1), at room temperature 1 x 10^1^9 cm^-^3 or more 1 x 10^2^0 cm^
In an n-type semiconductor film having a carrier concentration in the range of −^3 or less, the n-type semiconductor film has a carrier concentration of 2.5×10^-^4Ωc
An n-type semiconductor film having a specific resistance of m or less. 6. The n-type semiconductor film according to claim 1, wherein the dopant is at least one element of bromine and iodine. 7. The n-type semiconductor film according to any one of claims 1 to 6 and the formula (Zn_yCd_1_-_y)(S_zSe_tT
e_1_-_2_-_t) (y, z, t are respectively 0≦y≦1, 0≦z+t≦1, 0≦z≦1, 0≦t≦
1. A semiconductor device comprising, on a substrate, a pn junction in which p-type semiconductor films (having a value in the range of 1) are laminated. 8. A method for producing an n-type semiconductor film in which a group II-VI compound semiconductor is crystal-grown on a substrate by a vapor phase growth method using a group II element raw material, a group VI element raw material, and a dopant raw material, the method described above. The raw material supply ratio of the Group II element and the above Group VI element is such that the crystal growth rate is determined by the supply amount of the Group VI element raw material, and the pressure inside the reaction tank during crystal growth is 10^-^3
n-type ZnS_xSe_1_- under conditions below Torr
1. A method for manufacturing an n-type semiconductor film, comprising growing an n-type semiconductor film represented by _x (where x is a value in the range of 0≦x<1). 9. The method for manufacturing an n-type semiconductor film according to claim 8,
A method for producing an n-type semiconductor film, wherein the dopant raw material is at least one of alkyl iodide and alkyl bromide. 10. The method of manufacturing an n-type semiconductor film according to claim 9, wherein the alkyl iodide is methyl iodide. 11. The method for manufacturing an n-type semiconductor film according to claim 9, wherein the alkyl bromide is methyl bromide. 12. The method for manufacturing an n-type semiconductor film according to any one of claims 8 to 11, characterized in that the n-type semiconductor film is crystal-grown at a temperature of the substrate ranging from 250°C to 450°C. A method for manufacturing an n-type semiconductor film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2222510A JPH04106986A (en) | 1990-08-27 | 1990-08-27 | N-type semiconductor film, manufacture thereof and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2222510A JPH04106986A (en) | 1990-08-27 | 1990-08-27 | N-type semiconductor film, manufacture thereof and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04106986A true JPH04106986A (en) | 1992-04-08 |
Family
ID=16783565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2222510A Pending JPH04106986A (en) | 1990-08-27 | 1990-08-27 | N-type semiconductor film, manufacture thereof and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04106986A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007036300A (en) * | 2006-11-13 | 2007-02-08 | Sumitomo Electric Ind Ltd | Semiconductor optical element, and method for forming contact |
| KR100789078B1 (en) * | 2003-10-22 | 2007-12-26 | 스미토모덴키고교가부시키가이샤 | Semiconductor optical device and method for forming contact |
-
1990
- 1990-08-27 JP JP2222510A patent/JPH04106986A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100789078B1 (en) * | 2003-10-22 | 2007-12-26 | 스미토모덴키고교가부시키가이샤 | Semiconductor optical device and method for forming contact |
| JP2007036300A (en) * | 2006-11-13 | 2007-02-08 | Sumitomo Electric Ind Ltd | Semiconductor optical element, and method for forming contact |
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