JPH04105402A - Integrated magnetostatic wave filter - Google Patents
Integrated magnetostatic wave filterInfo
- Publication number
- JPH04105402A JPH04105402A JP22330590A JP22330590A JPH04105402A JP H04105402 A JPH04105402 A JP H04105402A JP 22330590 A JP22330590 A JP 22330590A JP 22330590 A JP22330590 A JP 22330590A JP H04105402 A JPH04105402 A JP H04105402A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- integrated
- filters
- region
- magnetostatic wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 30
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 12
- 230000002238 attenuated effect Effects 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 244000137852 Petrea volubilis Species 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 230000005291 magnetic effect Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005338 frosted glass Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、マイクロ波通信機器に用いる静磁波フィルタ
に係わり、特に1枚の強磁性体薄膜の形成された単結晶
基板上に複数のフィルタを集積する静磁波フィルタに関
する。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a magnetostatic wave filter used in microwave communication equipment, and in particular, to a magnetostatic wave filter used in microwave communication equipment, and in particular, to a magnetostatic wave filter for use in microwave communication equipment. This invention relates to a magnetostatic wave filter that integrates.
(従来の技術) 従来の集積型静磁波フィルタを第3図に示す。(Conventional technology) A conventional integrated magnetostatic wave filter is shown in FIG.
図において、1は誘電体基板、2は強磁性体単結晶薄膜
を片面に形成した単結晶基板(以下試料という)、3は
誘電体基板1に形成された金属薄膜パターン、4は接地
導体、5はトランスジューサである。試料2としては、
例えばガドリニウム・ガリウム・ガーネット(G、G、
G、)基板上にイツトリウム・鉄・ガーネット(Y、
1.G、 )薄膜を形成したものであり、薄膜側を誘電
体基板1に対向するように配置される。誘電体基板1は
例えばアルミナセラミックスである。金属薄膜パターン
3、トランスジューサ5は例えば誘電体基板1上にフォ
トエツチング法を用いて形成されたものであり、金属薄
膜パターン3、誘電体基板1及び接地導体4によりマイ
クロストリップ線路を構成している。In the figure, 1 is a dielectric substrate, 2 is a single crystal substrate with a ferromagnetic single crystal thin film formed on one side (hereinafter referred to as a sample), 3 is a metal thin film pattern formed on the dielectric substrate 1, 4 is a ground conductor, 5 is a transducer. As sample 2,
For example, gadolinium, gallium, garnet (G, G,
G,) yttrium/iron/garnet (Y,
1. G, ) A thin film is formed, and the thin film side is arranged to face the dielectric substrate 1. The dielectric substrate 1 is made of, for example, alumina ceramics. The metal thin film pattern 3 and the transducer 5 are formed, for example, on the dielectric substrate 1 using a photoetching method, and the metal thin film pattern 3, the dielectric substrate 1, and the ground conductor 4 constitute a microstrip line. .
以上のような構成において、A点から入力された高周波
信号はマイクロストリップ線路に沿って試料2の下部に
設置されたトランスジューサ5に伝送される。ここで試
料2嘴直流磁界を印加して磁化させておく。トランスジ
ューサ5がら生じる高周波磁界により試料2の強磁性体
薄膜上の静磁波が励振され、対向するもう一方のトラン
スジューサ5の方向へ静磁波は伝搬する。次に、トラン
スジューサ5で静磁波のエネルギーは高周波磁界に変換
され、マイクロストリップ線路に沿ってB点に伝送され
る。しながって、A点からB点への伝送特性は印加した
直流磁界の大きさ、強磁性体薄膜の飽和磁化の大きさ及
び入出カドランスジューサの形状により決まる周波数帯
域のみが通過する帯域通過特性を示す。In the above configuration, the high frequency signal input from point A is transmitted along the microstrip line to the transducer 5 installed below the sample 2. Here, a DC magnetic field is applied to the sample 2 beak to magnetize it. The high frequency magnetic field generated by the transducer 5 excites magnetostatic waves on the ferromagnetic thin film of the sample 2, and the magnetostatic waves propagate in the direction of the other transducer 5. Next, the energy of the static magnetic wave is converted into a high-frequency magnetic field by the transducer 5, and transmitted to point B along the microstrip line. Therefore, the transmission characteristics from point A to point B are determined by the magnitude of the applied DC magnetic field, the magnitude of saturation magnetization of the ferromagnetic thin film, and the shape of the input/output quadrant transducer. Indicates passing characteristics.
(発明が解決しようとする課題)
上記構成の従来のフィルタにおいては、誘電体基板1上
に複数個のトランスジューサ5を形成し、その上に複数
枚の試料2を設置する。これは、1枚の強磁性体薄膜上
に複数のフィルタを構成すると、フィルタにおいて励振
された静磁波が隣接するフィルタを混入し、フィルタの
通過特性にスプリアス応答を生じさせることを防ぐため
である。(Problems to be Solved by the Invention) In the conventional filter having the above configuration, a plurality of transducers 5 are formed on a dielectric substrate 1, and a plurality of samples 2 are placed thereon. This is to prevent the static magnetic waves excited in a filter from mixing with adjacent filters and causing spurious responses in the filter's pass characteristics when multiple filters are configured on a single ferromagnetic thin film. .
そのため、複数枚の強磁性体薄膜を誘電体基板上に設置
することになり、部品点数が増大し、組立工賃が増大す
るという問題点を有していた。Therefore, a plurality of ferromagnetic thin films must be placed on a dielectric substrate, resulting in an increase in the number of parts and an increase in assembly costs.
そこで、本発明の目的は、部品点数を多くしないで、す
なわち組立工数を多くしないで、複数の静磁波フィルタ
を1枚の回路基板上に形成することができる集積化静磁
波フィルタを提供することである。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide an integrated magnetostatic wave filter that can form a plurality of magnetostatic wave filters on one circuit board without increasing the number of parts, that is, without increasing the number of assembly steps. It is.
(問題を解決するための手段)
本発明は、上記目的を達成するために、強磁性体単結晶
薄膜が面上に形成された単結晶基板を用い、少なくとも
2組以上の送受信用トランスジューサが1枚の当該基板
上に形成された集積型静磁波フィルタにおいて、各フィ
ルタ素子の間に強磁性体薄膜の表面を機械的に荒した領
域を設けるようにしたものである。(Means for Solving the Problems) In order to achieve the above object, the present invention uses a single crystal substrate on which a ferromagnetic single crystal thin film is formed, and at least two or more sets of transmitting and receiving transducers are connected to one In the integrated magnetostatic wave filter formed on the two substrates, a region where the surface of the ferromagnetic thin film is mechanically roughened is provided between each filter element.
(作用)
上記のように構成された集積化静磁波フィルタは、強磁
性体薄膜の表面を機械的に荒すことにより、静磁波の伝
搬強度を大幅に減衰できることを積極的に利用したもの
である。静磁波はそのエネルギーを強磁性体薄膜内に集
中して伝搬するため、強磁性体薄膜の表面の機械的な状
態に敏感に反応する。従来の集積化静磁波フィルタでは
、フィルタ間の干渉を防ぐため、個別の強磁性体薄膜の
チップを並べていたが、本発明による各フィルタ間に強
磁性体薄膜の表面を機械的に荒した領域を設けることで
、静磁波のエネルギーを減衰させ、従来の場合と同様に
フィルタ間の干渉を防ぐことができる。(Function) The integrated magnetostatic wave filter configured as described above actively utilizes the fact that the propagation intensity of static magnetic waves can be significantly attenuated by mechanically roughening the surface of the ferromagnetic thin film. . Because magnetostatic waves concentrate their energy and propagate within the ferromagnetic thin film, they respond sensitively to the mechanical condition of the surface of the ferromagnetic thin film. In conventional integrated magnetostatic wave filters, individual ferromagnetic thin film chips are arranged in order to prevent interference between filters, but according to the present invention, between each filter there is an area where the surface of the ferromagnetic thin film is mechanically roughened. By providing this, it is possible to attenuate the energy of static magnetic waves and prevent interference between filters as in the conventional case.
(実施例) 次に、実施例について図面を参照して説明する。(Example) Next, examples will be described with reference to the drawings.
第1図は本発明集積化静磁波フィルタの一実施例を示す
斜視図で、1は誘電体基板、2は後記するように、強磁
性体単結晶薄膜を片面に形成した単結晶基板(試料)、
3は誘電体基板1に形成された金属薄膜パターン、4は
接地導体、5はトランスジューサである。ここで、試料
2は、例えば2組以上の送受信用トランスジューサ5に
またがる適当な大きさで、G、G、G (ガドリニウ
ム・ガリウム・ガーネット)単結晶板上に液相成長法に
よりY、1.G (イツトリウム・鉄・ガーネット)
単結晶薄膜を形成したものである。また、トランスジュ
ーサ5は真空蒸着によりアルミニューム薄膜を形成後、
フォトエツチング法によりパターン形成される。そして
試料2の強磁性体単結晶膜の形成されている面とトラン
スジューサらとを対向するようにスペーサ(図示せず)
を介して設置されるが、各フィルタ素子の間に、各フィ
ルタ間の干渉を防ぐなめY、LG、薄膜の表面を機械的
に荒した領域6を設けるようにしたものである。なお−
例として600番の紙ヤスリにより領域6を形成しな。FIG. 1 is a perspective view showing an embodiment of the integrated magnetostatic wave filter of the present invention, in which 1 is a dielectric substrate, and 2 is a single crystal substrate (sample ),
3 is a metal thin film pattern formed on the dielectric substrate 1, 4 is a ground conductor, and 5 is a transducer. Here, the sample 2 is of an appropriate size spanning, for example, two or more sets of transmitting/receiving transducers 5, and is grown by liquid phase growth on a G, G, G (gadolinium gallium garnet) single crystal plate. G (yztrium, iron, garnet)
A single crystal thin film is formed. In addition, the transducer 5 is formed by forming an aluminum thin film by vacuum evaporation.
Patterns are formed by photoetching. A spacer (not shown) is placed so that the surface on which the ferromagnetic single crystal film of sample 2 is formed faces the transducer.
However, between each filter element, a region 6 is provided where the surface of Y, LG, and thin films are mechanically roughened to prevent interference between the filters. Note-
For example, area 6 is formed using 600-grit sandpaper.
この場合、荒した領域の程度は表面が白くなる程度又は
曇りガラス程度にする。このようにすると静磁波はY、
1.GJl端部で乱反射して減衰する。しかし剥ぎ取っ
てしまうと膜端部が反射面になり戻ってくるので効果は
ない。In this case, the roughness of the area should be such that the surface becomes white or frosted glass. In this way, the static magnetic wave becomes Y,
1. It is diffusely reflected at the GJl end and attenuated. However, if it is peeled off, the edge of the film becomes a reflective surface and returns to the surface, so there is no effect.
一例としてY、1.G膜端部の未処理のものと本発明の
ように#600の紙やすりで表面を荒したものの挿入損
失特性は第2図に示すように前者(8図〉はノイズが多
く、後者(b図)はノイズが全く現われず、良好なフィ
ルタが得られた。なお、各デバイスの主な寸法等は次の
とおりである。For example, Y, 1. As shown in Figure 2, the insertion loss characteristics of the untreated G membrane edge and the surface roughened with #600 sandpaper as in the present invention are as shown in Figure 2.The former (Figure 8) has a lot of noise, and the latter (Figure In the case of (Fig.), no noise appeared at all, and a good filter was obtained.The main dimensions of each device are as follows.
飽和磁化・・・1520G、 YIG Jli厚・・・
19μm、表面を荒した領域の幅・・・IWll、外部
磁界・・・7000e、伝搬路長・・・6.5m、トラ
ンスジューサ・・・シングルストリップでストリップ幅
0.4mm
(発明の効果)
以上述べた通り、本発明によれば、集積化静磁波フィル
タの各フィルタ間の干渉を防ぐために、複数の強磁性体
基板を用いずに、各フィルタの間に強磁性体薄膜の表面
を荒した領域を設けることで、各フィルタ間の干渉を防
ぎ、なおかつフィルタの構成部品点数を大幅に削減する
ことができる。Saturation magnetization...1520G, YIG Jli thickness...
19μm, Width of the area where the surface is roughened...IWll, External magnetic field...7000e, Propagation path length...6.5m, Transducer...Single strip, strip width 0.4mm (Effects of the invention) As described above As described above, according to the present invention, in order to prevent interference between the filters of an integrated magnetostatic wave filter, a region with a roughened surface of a ferromagnetic thin film is provided between each filter without using a plurality of ferromagnetic substrates. By providing this, it is possible to prevent interference between the respective filters and to significantly reduce the number of component parts of the filter.
そのため製作コストを大幅に軽減でき、経済的にも大き
な効果がある。Therefore, the production cost can be significantly reduced, and there is a great economic effect.
第1図は本発明集積化静磁波フィルタの一実施例を示す
斜視図、第2図(a)及び(b)はそれぞれY、1.G
膜端部の未処理のものと、本発明のものとの挿入損失特
性を示す図、第3図は従来の集積化静磁波フィルタの斜
視図である。
1・・・誘電体基板、2・・・強磁性体単結晶薄膜を片
面に形成した単結晶基板(試料)、3・・・金属薄膜パ
ターン、4・・・接地導体、5・・・トランスジューサ
、6・・・強磁性体薄膜の表面を機械的に荒した領域。
図(0)
n級l大
、GHz
図(b)
声阪我
、GHzFIG. 1 is a perspective view showing an embodiment of the integrated magnetostatic wave filter of the present invention, and FIGS. 2(a) and 2(b) are Y, 1. G
FIG. 3 is a perspective view of a conventional integrated magnetostatic wave filter. DESCRIPTION OF SYMBOLS 1... Dielectric substrate, 2... Single crystal substrate (sample) with a ferromagnetic single crystal thin film formed on one side, 3... Metal thin film pattern, 4... Ground conductor, 5... Transducer , 6...A region where the surface of the ferromagnetic thin film is mechanically roughened. Figure (0) N class l large, GHz Figure (b) Voice Sakaga, GHz
Claims (1)
用い、少なくとも2組以上の送受信用トランスジューサ
が1枚の当該基板上に形成された集積型静磁フィルタに
おいて、各フィルタ素子間の強磁性体薄膜の表面を機械
的に荒した領域を設けることを特徴とする集積化静磁波
フイルタ。In an integrated magnetostatic filter in which a single-crystal substrate on which a ferromagnetic single-crystal thin film is formed, and at least two sets of transmitting and receiving transducers are formed on the single substrate, there is a gap between each filter element. An integrated magnetostatic wave filter characterized by providing a mechanically roughened area on the surface of a ferromagnetic thin film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22330590A JPH04105402A (en) | 1990-08-25 | 1990-08-25 | Integrated magnetostatic wave filter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22330590A JPH04105402A (en) | 1990-08-25 | 1990-08-25 | Integrated magnetostatic wave filter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04105402A true JPH04105402A (en) | 1992-04-07 |
Family
ID=16796068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22330590A Pending JPH04105402A (en) | 1990-08-25 | 1990-08-25 | Integrated magnetostatic wave filter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04105402A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100405916B1 (en) * | 2001-08-06 | 2003-11-21 | 안호열 | A halogen lamp socket |
-
1990
- 1990-08-25 JP JP22330590A patent/JPH04105402A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100405916B1 (en) * | 2001-08-06 | 2003-11-21 | 안호열 | A halogen lamp socket |
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