JPH0392009A - Surface acoustic wave device - Google Patents

Surface acoustic wave device

Info

Publication number
JPH0392009A
JPH0392009A JP22998889A JP22998889A JPH0392009A JP H0392009 A JPH0392009 A JP H0392009A JP 22998889 A JP22998889 A JP 22998889A JP 22998889 A JP22998889 A JP 22998889A JP H0392009 A JPH0392009 A JP H0392009A
Authority
JP
Japan
Prior art keywords
acoustic wave
surface acoustic
series
inductance
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22998889A
Other languages
Japanese (ja)
Inventor
Mikio Morimoto
森本 幹夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP22998889A priority Critical patent/JPH0392009A/en
Publication of JPH0392009A publication Critical patent/JPH0392009A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To decrease the deterioration in the hand width characteristic due to an undesired inductance by forming a series capacitance of a nearly equivalent value so as to cancel the inductance of a bonding wire and a lead wire or the like. CONSTITUTION:Interdigital electrodes 2, 2a and 4, 4a forming a surface acoustic wave transducer, a capacitor 3 connecting in series with the interdigital electrode 2, and a capacitor 5 connecting in series with the interdigital electrode 4a are formed on a piezoelectric circuit board 1. The capacitors 3, 5 have a nearly equivalent capacitance to cancel the series inductance between the lead terminal and the interdigital electrode 2 or 4. Thus, amplitude distortion, delay distortion and deterioration in the insertion loss due to the effect of the undesired inductance are reduced.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は弾性表面波装置に関する. 〔従来の技術〕 従来の弾性表面波装置について図面を参照して説明する
. 第3図は従来の弾性表面波装置の一楕戒例を示す図であ
る. 第3図において、従来の弾性表面装置はパッケージ18
内の圧電回路基板13上に配置された交差指状電極14
と、リード線引出部5と、ボンディングワイヤ16と、
リード端子17とを有し、リード線引出部15,ボンデ
イングワイヤ16およびリード端子17は電気等価回路
的に弾性表面波トランスデューサに対して、直列のイン
ダクタンスが接続されていることと等価な構戒となって
いる。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a surface acoustic wave device. [Prior Art] A conventional surface acoustic wave device will be explained with reference to drawings. Figure 3 is a diagram showing an elliptical example of a conventional surface acoustic wave device. In FIG. 3, the conventional elastic surface device is packaged at 18.
interdigital electrodes 14 disposed on the piezoelectric circuit board 13 within the
, a lead wire pull-out section 5 , a bonding wire 16 ,
The lead wire extraction portion 15, the bonding wire 16, and the lead terminal 17 have a structure equivalent to connecting a series inductance to the surface acoustic wave transducer in terms of an electrical equivalent circuit. It has become.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の弾性表面波装置は、第3図に示すように
パッケージ18内の圧電回路基板13上に配置された交
差指状電極14と、リード線引出部15と、ボンディン
グワイヤl6と、リード端子17とを有して楕或されて
いて、リード線引出部15,ボンディングワイヤ16お
よびリード端子17は電気等価回路的に弾性表面波トラ
ンスデューサに対して、直列のインダクタンスが接続さ
れていることと等価な構成となっているので、この直列
インダクタンスは各4端子で発生し、特に超高周波帯に
おいてはこれ等のインダクタンスが特性に与える影響が
大きくなり、帯域幅の振幅歪,遅延歪,挿入損失の劣化
増大の原因となっている. 第5図は従来の弾性表面波装置の伝送特性の一例を示す
特性図である. 第5図において、不要インダクタンスの影響によって帯
域幅に2〜3dbのリプルが観測される. 〔課題を解決するための手段〕 本発明の弾性表面波装置は、弾性表面波トランスデュー
サを含む同一圧電回路基板上に前記弾性表面波トランス
デューサの出力端からリード端子までの直列インダクタ
ンスをほぼ打消すに等価な容量のキャパシタンスを形成
して或っている.〔実施例〕 次に、本発明について図面を参照して説明する. 第1図および第2図はそれぞれ本発明の第1および第2
の実施例の弾性表面波装置の圧電回路基′板を示す図で
ある. 第l図において、本第1の実施例の弾性表面波装置の圧
電回路基板1上には弾性表面波トランスデューサを構成
する交差指状電極2,2aおよび4.4aと、交差指状
電8li2と直列に接続して形成したキャパシタンス3
と、交差指状電極4aと直列に接続して形或したキャパ
シタンス5とを有し構成している. キャパシタンス3および5はそれぞれ本第1の実施例の
弾性表面波装置のリード端子(図示省略〉から交差指状
電極2または5間の直列のインダクタンスを打消すにほ
ぼ等価な容量を有するように形成されている. 第2図において、本第2の実施例の弾性表面波装置の圧
電回路基板6上には弾性表面波トランスデューサを構成
する交差指状電極7,7aおよび10.10aと、交差
指状電極7に直列に接続して形成したキャパシタンス8
と、交差指状電極7aに直列に接続して形或したキャパ
シタンス9と、同様に交差指状電極10.10aそれぞ
れに直列に接続して形或したキャパシタンス11.12
とを有して構或している. キャパシタンス8,9.11および12はそれぞれ本第
2の実施例の弾性表面波装置のリード端子(図示省略)
から各交差指状電極7.7a10.1Oa間の直列イン
ダクタンスを打消すにほぼ等価な容量を有するように形
成されている.第4図は第lおよび第2の実施例の弾性
表面波装置の伝送特性の一例を示す特性図である。
As shown in FIG. 3, the conventional surface acoustic wave device described above includes interdigital electrodes 14 disposed on the piezoelectric circuit board 13 in the package 18, a lead wire extraction portion 15, a bonding wire l6, and a lead. The lead wire extraction portion 15, the bonding wire 16, and the lead terminal 17 are connected to an inductance in series with the surface acoustic wave transducer in terms of an electrical equivalent circuit. Since they have an equivalent configuration, this series inductance is generated at each of the four terminals, and especially in ultra-high frequency bands, these inductances have a large effect on characteristics, causing amplitude distortion of the bandwidth, delay distortion, and insertion loss. This is the cause of increased deterioration. Figure 5 is a characteristic diagram showing an example of the transmission characteristics of a conventional surface acoustic wave device. In Fig. 5, a ripple of 2 to 3 db is observed in the bandwidth due to the influence of unnecessary inductance. [Means for Solving the Problems] The surface acoustic wave device of the present invention is provided on the same piezoelectric circuit board including the surface acoustic wave transducer so as to substantially cancel out the series inductance from the output end of the surface acoustic wave transducer to the lead terminal. This forms a capacitance of equivalent capacity. [Example] Next, the present invention will be explained with reference to the drawings. 1 and 2 are the first and second embodiments of the present invention, respectively.
FIG. 2 is a diagram showing a piezoelectric circuit board of a surface acoustic wave device according to an embodiment of the present invention. In FIG. 1, on the piezoelectric circuit board 1 of the surface acoustic wave device of the first embodiment, interdigital electrodes 2, 2a and 4.4a constituting a surface acoustic wave transducer, interdigital electrodes 8li2 and Capacitance 3 formed by connecting in series
and a capacitance 5 connected in series with the interdigital electrode 4a. The capacitances 3 and 5 are each formed to have a capacitance approximately equivalent to canceling the series inductance between the lead terminal (not shown) of the surface acoustic wave device of the first embodiment and the interdigital electrode 2 or 5. In FIG. 2, interdigital electrodes 7, 7a and 10.10a constituting the surface acoustic wave transducer are disposed on the piezoelectric circuit board 6 of the surface acoustic wave device of the second embodiment. A capacitance 8 formed by connecting in series to the shaped electrode 7
, a capacitance 9 connected in series to the interdigital electrodes 7a, and capacitances 11, 12 similarly connected in series to the interdigital electrodes 10, 10a, respectively.
It consists of the following. Capacitances 8, 9, 11 and 12 are lead terminals (not shown) of the surface acoustic wave device of the second embodiment, respectively.
The interdigital electrodes 7.7a and 10.1Oa are formed to have a capacitance approximately equivalent to canceling the series inductance between the interdigital electrodes 7.7a and 10.1Oa. FIG. 4 is a characteristic diagram showing an example of the transmission characteristics of the surface acoustic wave devices of the first and second embodiments.

第4図に示すように本第1および第2の実施例の弾性表
面波装置では、帯域幅のりプルは、第5図に示す従来例
に比べて1dB以下に低減されて改善の効果が得られる
. 〔発明の効果〕 以上説明したように本発明は、パッケージ内に発生する
ボンディングワイヤ、リード線等によるインダクタンス
を打消すにほぼ等価な同一圧電回路基板上に形或された
直列のキャパシタンスを有.することにより、不要イン
ダクタンスによる弾性表面波装置の帯域幅特性の劣化を
低減できる効果がある.
As shown in FIG. 4, in the surface acoustic wave devices of the first and second embodiments, the bandwidth ripple is reduced to 1 dB or less compared to the conventional example shown in FIG. 5, resulting in an improvement effect. It will be done. [Effects of the Invention] As explained above, the present invention has a series capacitance formed on the same piezoelectric circuit board that is almost equivalent to canceling the inductance caused by bonding wires, lead wires, etc. generated in the package. This has the effect of reducing deterioration of the bandwidth characteristics of the surface acoustic wave device due to unnecessary inductance.

【図面の簡単な説明】[Brief explanation of drawings]

第1図および第2図はそれぞれ本発明の第1および第2
の実施例の弾性表面波装置の圧電回路基板を示す図であ
る. 1・・・圧電回路基板、2.2a・・・交差指状電極、
3・・・キャパシタンス、4,4a・・・交差指状電極
、5・・・キャパシタンス、6・・・圧電基板、7,7
a・・・交差指状電極、8,9・・・キャパシタンス、
10.10a・・・交差指状電極、11.12・・・キ
ャパシタンス. 第3図は従来の弾性表面波装置の一楕或例を示す図であ
る. 13・・・圧電回路基板、14・・・交差指状電極、1
5・・・リード引出部、16・・・ボンデイングワイヤ
、17・・・リード端子、18・・・バ・ジケージ、第
4図は第1および第2の実施例の弾性表面波装置の伝送
特性の一例を示す特性図、第5図は従来の弾性表面波装
置の伝送特性の一例を示す特性図である.
1 and 2 are the first and second embodiments of the present invention, respectively.
FIG. 3 is a diagram showing a piezoelectric circuit board of a surface acoustic wave device according to an embodiment of the present invention. 1... Piezoelectric circuit board, 2.2a... Interdigital electrode,
3... Capacitance, 4, 4a... Interdigital electrode, 5... Capacitance, 6... Piezoelectric substrate, 7, 7
a... Interdigital electrodes, 8, 9... Capacitance,
10.10a... interdigital electrode, 11.12... capacitance. Figure 3 is a diagram showing an example of a conventional surface acoustic wave device. 13... Piezoelectric circuit board, 14... Interdigital electrode, 1
5... Lead extraction portion, 16... Bonding wire, 17... Lead terminal, 18... Bar cage, Fig. 4 shows the transmission characteristics of the surface acoustic wave devices of the first and second embodiments. FIG. 5 is a characteristic diagram showing an example of the transmission characteristics of a conventional surface acoustic wave device.

Claims (1)

【特許請求の範囲】[Claims]  弾性表面波トランスデューサを含む同一圧電回路基板
上に前記弾性表面波トランスデューサの出力端からリー
ド端子までの直列インダクタンスをほぼ打消すに等価な
容量のキャパシタンスを形成して成ることを特徴とする
弾性表面波装置。
A surface acoustic wave characterized by forming on the same piezoelectric circuit board containing a surface acoustic wave transducer a capacitance having a capacity equivalent to substantially canceling the series inductance from the output end of the surface acoustic wave transducer to the lead terminal. Device.
JP22998889A 1989-09-04 1989-09-04 Surface acoustic wave device Pending JPH0392009A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22998889A JPH0392009A (en) 1989-09-04 1989-09-04 Surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22998889A JPH0392009A (en) 1989-09-04 1989-09-04 Surface acoustic wave device

Publications (1)

Publication Number Publication Date
JPH0392009A true JPH0392009A (en) 1991-04-17

Family

ID=16900843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22998889A Pending JPH0392009A (en) 1989-09-04 1989-09-04 Surface acoustic wave device

Country Status (1)

Country Link
JP (1) JPH0392009A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4798319B1 (en) * 2010-05-13 2011-10-19 株式会社村田製作所 Elastic wave device
US8609806B2 (en) 2008-09-16 2013-12-17 Nippon Steel & Sumikin Chemical Co., Ltd. Phosphorus-containing phenol compound, production method therefor, and curable resin compositons and cured products using the compound

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62238654A (en) * 1986-04-09 1987-10-19 Toshiba Corp Package for microwave semiconductor device
JPS62272611A (en) * 1986-05-21 1987-11-26 Hitachi Ltd Elastic surface wave device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62238654A (en) * 1986-04-09 1987-10-19 Toshiba Corp Package for microwave semiconductor device
JPS62272611A (en) * 1986-05-21 1987-11-26 Hitachi Ltd Elastic surface wave device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8609806B2 (en) 2008-09-16 2013-12-17 Nippon Steel & Sumikin Chemical Co., Ltd. Phosphorus-containing phenol compound, production method therefor, and curable resin compositons and cured products using the compound
JP4798319B1 (en) * 2010-05-13 2011-10-19 株式会社村田製作所 Elastic wave device
WO2011142143A1 (en) * 2010-05-13 2011-11-17 株式会社村田製作所 Acoustic wave device
CN102823130A (en) * 2010-05-13 2012-12-12 株式会社村田制作所 Acoustic wave device
US8710940B2 (en) 2010-05-13 2014-04-29 Murata Manufacturing Co., Ltd. Elastic wave device having a capacitive electrode on the piezoelectric substrate

Similar Documents

Publication Publication Date Title
JP2004072411A (en) Saw filter and electronic device using the same
KR19980081296A (en) Surface acoustic wave device
JPS61220511A (en) Surface acoustic wave resonator
JP3887037B2 (en) Surface acoustic wave filter device
JP3244032B2 (en) Surface acoustic wave device
JPH0998056A (en) Surface acoustic wave device
EP0316836B1 (en) Surface-acoustic-wave device
JP3401408B2 (en) Surface acoustic wave filter
JPH0392009A (en) Surface acoustic wave device
JPH01109811A (en) Noise filter
JPH09261002A (en) Surface acoustic wave filter, method for setting block band in surface acoustic wave filter and surface acoustic wave element
JP3380417B2 (en) Polarized surface acoustic wave filter
JP3175581B2 (en) Surface acoustic wave device
JPH02237211A (en) Surface acoustic wave filter
RU2103806C1 (en) Surface-wave rejection filter
JPH0526822Y2 (en)
JP3253333B2 (en) Method of adjusting characteristics of surface acoustic wave filter
JPH1117486A (en) Saw filter and electronic equipment using the filter
JPH0435515A (en) Surface acoustic wave device
JPS60105310A (en) Surface acoustic wave filter
JPH1013183A (en) Surface acoustic wave device
JPH0720002B2 (en) Compound filter device
JPH11298283A (en) Surface acoustic wave filter
JPH04249907A (en) Surface acoustic wave filter
JP3161842B2 (en) Surface acoustic wave filter