JPH0391981A - Frequency variable type stabilized light source - Google Patents
Frequency variable type stabilized light sourceInfo
- Publication number
- JPH0391981A JPH0391981A JP22958589A JP22958589A JPH0391981A JP H0391981 A JPH0391981 A JP H0391981A JP 22958589 A JP22958589 A JP 22958589A JP 22958589 A JP22958589 A JP 22958589A JP H0391981 A JPH0391981 A JP H0391981A
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- laser
- semiconductor laser
- light
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 230000031700 light absorption Effects 0.000 claims abstract description 21
- 230000003287 optical effect Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 abstract 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 7
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000000862 absorption spectrum Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 230000000087 stabilizing effect Effects 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 206010041662 Splinter Diseases 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000035559 beat frequency Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、気体が持つ光吸収ピークや共振器の共振周波
数などを周波数基準にすることにより、第１の半導体レ
ーザのレーザ光の周波数を高精度に安定化し、さらにこ
の安定化したレーザ光の周波数を基準とし、その周波数
から任意の周波数だけずらして第２の半導体レーザのレ
ーザ光の周波数を固定することによって任意に周波数を
選べるようにした周波数可変型安定化光源に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention allows the frequency of the laser beam of the first semiconductor laser to be adjusted by using the optical absorption peak of a gas, the resonant frequency of a resonator, etc. as a frequency standard. The frequency of the laser beam of the second semiconductor laser is fixed by stabilizing it with high precision, and by shifting the frequency of the stabilized laser beam as a reference by an arbitrary frequency from that frequency, the frequency can be arbitrarily selected. This invention relates to a frequency variable stabilized light source.
本発明の光源は、各種光計測用光源を始め、高精度光周
波数基準光源、物理・化学計測用安定化光源、光通信用
光源などに広く利用できる。The light source of the present invention can be widely used as a light source for various optical measurements, a high-precision optical frequency reference light source, a stabilized light source for physical/chemical measurements, a light source for optical communication, and the like.
特に、例えば、高度なコヒーレント性が要求されるヘテ
ロダイン光通信用光源等に利用できる。In particular, it can be used, for example, as a light source for heterodyne optical communications that requires a high degree of coherence.
半導体レーザは、駆動電流と周囲温度を変えることによ
ってレーザ光の周波数と光強度を可変することができる
という他のレーザ光源にない特徴を有している．
その可変範囲は、周波数が一数Ｇ ＨＺ／ＩＩＡ，
１０数Ｇ ＨＺ／Ｋであり、光強度が０．数ｍＷ／ｍＡ
，一数１０μＷ／Ｋであることが知られている。Semiconductor lasers have a feature that other laser light sources do not have: the frequency and intensity of laser light can be varied by changing the driving current and ambient temperature. Its variable range is several GHz/IIA frequencies,
10-odd GHz/K, and the light intensity is 0. Several mW/mA
, is known to be several 10 μW/K.
（発明が解決しようとする課題〕
しかし、以上に述べた長所は反面、駆動電流と周囲温度
の変動によって周波数と光強度が不安定になるという短
所にもなっている。この短所をなくすため従来において
は、光吸収セルを用いて所定の周波数に安定させていた
。例えば、同一出園人等による発明「波長安定化光源Ｊ
ｌｉｌ昭６３− ２４８２５０号）では周囲温度を、任
意に設定した温度の±０．１〜１ｍＫ程度の範囲内まで
安定に保ち、その上で周波数を光吸収セル中のガスの光
吸収スペクトル等の周波数基準と比較し、その差分に対
応する駆動電流を半導体レーザに負帰還させ、周波数を
安定化しているため光吸収スペクトルのピーク位置の周
波数のレーザ光しか得られない。また半導体レーザのレ
ーザ光の周波数を固定しただけでは、周波数基準となる
周波数のレーザ光しか得られず、外部変調器を用いなけ
れば、レーザ光の周波数変調ができないという課題があ
った。(Problems to be Solved by the Invention) However, despite the above-mentioned advantages, there is also a disadvantage that the frequency and light intensity become unstable due to fluctuations in drive current and ambient temperature. In the 1990s, a light absorption cell was used to stabilize the frequency at a predetermined level.For example, the wavelength stabilized light source J
lil No. 63-248250), the ambient temperature is kept stable within a range of approximately ±0.1 to 1 mK of the arbitrarily set temperature, and then the frequency is adjusted to match the light absorption spectrum of the gas in the light absorption cell. Since the frequency is stabilized by comparing it with a frequency reference and feeding a driving current corresponding to the difference negatively back to the semiconductor laser, it is possible to obtain only laser light at the frequency at the peak position of the optical absorption spectrum. In addition, simply fixing the frequency of the laser beam of a semiconductor laser results in obtaining only a laser beam with a frequency that serves as a frequency reference, and there is a problem in that the frequency of the laser beam cannot be modulated without using an external modulator.
（参考文献）
（１）橋本 実．大津 元一；
ｊ ｊ１７Ｒ ｂ原子発振器のためのレーザ分光及び半
導体レーザの周波数制御Ｊ ． Ｔｒａｎｓ． ＩＥ
Ｅ ＪａｐａｎＶｏｌ．１０８−Ｃ，’８８ ｐＴ
１．７０６−７１２（２）橋本 実，小沢 英隆，大津
元一；「半導体レーザ励起ルビジウム原子発振器」、
電子情報通信学会 ＯＱＥ８５−３ ｐｐ．１５−
２２〔課題を解決するための手段及び作用〕そこで、本
発明では、上記の課題に対して、気体が持つ光吸収ピー
クや共振器の共振周波数などを周波数基準にすることに
より第１の半導体レーザのレーザ光の周波数を安定化し
、その周波数から任意の周波数だけずらして第２の半導
体レーザのレーザ光の周波数を安定にすることで周波数
可変型安定化光源を実現するものである。(References) (1) Minoru Hashimoto. Motoichi Otsu; j j17R b Laser spectroscopy for atomic oscillators and frequency control of semiconductor lasers J. Trans. IE
E Japan Vol. 108-C,'88 pT
1.706-712 (2) Minoru Hashimoto, Hidetaka Ozawa, Genichi Otsu; “Semiconductor laser pumped rubidium atomic oscillator”,
Institute of Electronics, Information and Communication Engineers OQE85-3 pp. 15-
22 [Means and effects for solving the problem] Therefore, in the present invention, in order to solve the above problem, the first semiconductor laser A frequency-variable stabilized light source is realized by stabilizing the frequency of the laser light of the second semiconductor laser and shifting it by an arbitrary frequency from that frequency to stabilize the frequency of the laser light of the second semiconductor laser.
この実現により、
（１）第１の半導体レ〜ザのレーザ光の周波数から任意
の周波数だけずらした第２の半導体レーザのレーザ光を
出力光として用いることにより、任意の周波数のレーザ
光を得ることかで゛きる。By realizing this, (1) Laser light of an arbitrary frequency can be obtained by using the laser light of the second semiconductor laser, which is shifted by an arbitrary frequency from the frequency of the laser light of the first semiconductor laser, as output light. I can do that.
（２）電気光学効果を利用した周波数シフターを用いて
レーザ光の周波数を変澗させた場合、変調周波数の精度
はあまり良くないが、ビート周波数をカウンタすること
により変調周波数を制御することとすれば、デジタル的
に制御できるために、高精度な制御ができる。(2) When changing the frequency of laser light using a frequency shifter that utilizes the electro-optic effect, the accuracy of the modulation frequency is not very good, but it is possible to control the modulation frequency by countering the beat frequency. For example, since it can be controlled digitally, highly accurate control is possible.
第１図は本発明の周波数可変型安定化光源の一実施例を
示したものである。FIG. 1 shows an embodiment of the frequency variable stabilized light source of the present invention.
第工の半導体レーザ１から出力されたレーザ光を、第１
のレーザ光取出用ビームスプリッタ８を？して周波敗弁
別器２に入射する。The laser beam output from the first semiconductor laser 1 is
Beam splitter 8 for extracting laser light? and enters the frequency discriminator 2.
周波数弁別器２は、所定の周波数だけを吸収する特性（
光吸収特性）を有し、所望の光吸収特性が得られるよう
にしたエタロン．干渉装置，フィルタ，光吸収セルなど
を用いることができる。The frequency discriminator 2 has a characteristic of absorbing only a predetermined frequency (
An etalon that has the desired light absorption properties (light absorption properties). Interference devices, filters, light absorption cells, etc. can be used.
本実施例では光吸収セルを用いた場合について説明する
。In this example, a case will be explained in which a light absorption cell is used.
光吸収セルの中には、ルビジウム（１？ｂ） ，セシウ
ム（Ｃｓ），アセチレンガス（Ｃ．Ｈ２），水蒸気（Ｈ
２０），炭酸ガス（Ｇｏ■）等のガスが単独でまたは複
数種類封入されており、特定光の周波数において封入物
質で定まる吸収スペクトルを有する。The light absorption cell contains rubidium (1?b), cesium (Cs), acetylene gas (C.H2), and water vapor (H2).
20), gas such as carbon dioxide (Go) is sealed singly or in plural types, and has an absorption spectrum determined by the sealed substance at a specific frequency of light.
第２図は、光吸収ガスとしてアセチレンガスを封入した
場合の光吸収セルにおける吸収スペクトルの一例を示し
たものである。この図から明らかなように，レーザ光の
周波数（横軸）が変化するのに対応してレーザ光が光吸
収セルを透過（実施例がエタロン．干渉装置等の場合は
通過）する透過光強度（縦軸）も変化する。FIG. 2 shows an example of an absorption spectrum in a light absorption cell when acetylene gas is sealed as a light absorption gas. As is clear from this figure, as the frequency of the laser light (horizontal axis) changes, the intensity of the transmitted light as the laser light passes through the light absorption cell (in the example is an etalon, and in the case of an interference device, etc.) (vertical axis) also changes.
先ず、第１の周波数安定化光′／Ｒ９について説明する
。First, the first frequency stabilized light '/R9 will be explained.
第１の半導体レーザｌのレーザ光の周波数をｉに安定化
することを考える。この場合、実際の周波数がｆｌであ
ったとして、周波数ｆ１は周波数ｆｍの近傍にあるとす
る。第２図から、周波数ｆｍ， ｆｌにおける透過光強
度は、それぞれＰｍ， ＰＩである。Consider stabilizing the frequency of the laser light from the first semiconductor laser l to i. In this case, assuming that the actual frequency is fl, it is assumed that the frequency f1 is near the frequency fm. From FIG. 2, the transmitted light intensities at frequencies fm and fl are Pm and PI, respectively.
この透過光強度Ｐ１のときの透過光を、第１図に示すよ
うに、第１の受光器３で電圧に変換し、さらに第１の増
幅器４で増幅する。その増幅した後の電圧をｖ１とする
。同様に透過光強度ＰＩＩ１のときの透過光の第１の増
幅器４における出力電圧はＶｍである。基準電圧源５の
出力電圧をＶｍに固定し、差動増幅器６で基準電圧源５
の出力と第１の増幅器４の出力との差分をとる。その差
出力を第１の駆動電流ａ７に負帰還すれば、常にＶｍ−
Ｖｌの関係となり、第１の半導体レ〜ザ１のレーザ光
は、周波数ｆｍに固定されることになる。The transmitted light at the transmitted light intensity P1 is converted into a voltage by the first light receiver 3, and further amplified by the first amplifier 4, as shown in FIG. The voltage after the amplification is assumed to be v1. Similarly, the output voltage of the transmitted light at the first amplifier 4 when the transmitted light intensity is PII1 is Vm. The output voltage of the reference voltage source 5 is fixed at Vm, and the differential amplifier 6 outputs the reference voltage source 5.
The difference between the output of the first amplifier 4 and the output of the first amplifier 4 is calculated. If the difference output is negatively fed back to the first drive current a7, Vm-
Vl, and the laser beam from the first semiconductor laser 1 is fixed at the frequency fm.
このレーザ光は、第１のレーザ光取出用ビームスプリッ
タ８によって外部に出力される。This laser light is outputted to the outside by the first laser light extraction beam splitter 8.
つぎに、第２の周波数安定化光源１９について説゛明す
る。Next, the second frequency stabilized light source 19 will be explained.
第２の半導体レーザ１０から出力されたレーザ光と第１
の周波数安定化光源９つまり．第１のレーザ光取出用ビ
ームスプリッタ８から出力されたレーザ光とを合波器１
１で合波することによって光ビト信号を発生させ、その
光ビート信号を第２の受光器１２で電気ビート信号に変
換する。この電気ビート信号を第２の増幅器１３で増幅
し、その出力をブリスケーラ１４でｄ分のｌまで分周す
る。The laser light output from the second semiconductor laser 10 and the first
Frequency stabilized light source 9 ie. The laser beam output from the first laser beam extraction beam splitter 8 is combined with the multiplexer 1.
1 generates an optical beat signal, and the second optical receiver 12 converts the optical beat signal into an electric beat signal. This electric beat signal is amplified by a second amplifier 13, and its output is frequency-divided by d/l by a brise scaler 14.
仮に、得たいレーザ光の周波数をｆｓであるとすれば１
可変信号発生器１５から出力される周波数信号は、ｆｓ
ｇ ＝ （ ｆｓ − ｆｍ） ／ｄ となる。If the frequency of the desired laser beam is fs, then 1
The frequency signal output from the variable signal generator 15 is fs
g = (fs - fm)/d.
この出力ｆｓｇとプリスケーラ１４からの出力ｆｐとを
周波数差信号発生器ｌ６に人力する。This output fsg and the output fp from the prescaler 14 are input to a frequency difference signal generator l6.
この周波数差信号発生器１６は、ブリスケ〜ラ１４の出
力ｆｐと可変信号発生器ｌ５の出力ｆｓｇとの差（ｆｐ
−ｆａｇ）に対応した信号を出力するので、この信号が
常にＯとなるように第２の駆動電流源１７に負帰還すれ
ば、第２の半導体レーザ１０からのレーザ光の周波数は
、ｆｓ＝ ｆｍ ＋ ｆｓｇＸ ｄに安定化することに
なり、第２のレーザ光取出用ビームスプリッタｌ８によ
って、外部に出力することができる。This frequency difference signal generator 16 generates a difference (fp
-fag), so if this signal is negatively fed back to the second drive current source 17 so that it is always O, the frequency of the laser light from the second semiconductor laser 10 will be fs= It is stabilized to fm + fsgX d, and can be output to the outside by the second laser beam extraction beam splitter l8.
第２の周波数安定化光源１９の構威要素であるブリスケ
ーラ１４，可変信号発生器１５，周波数差信号発生器１
６はディジタル的に信号処理ができるため高精度な周波
数制御ができる。The structural elements of the second frequency stabilized light source 19 are a brise scaler 14, a variable signal generator 15, and a frequency difference signal generator 1.
6 can perform digital signal processing, so highly accurate frequency control is possible.
ブリスケーラ１４の帯域は、数ＧＨｚ程度であるので，
周波数の可変範囲もそれと同じとなる。Since the band of the brise scaler 14 is about several GHz,
The frequency variable range is also the same.
アセチレンの光吸収ピークは半値全幅が数百ＭＨｚであ
り、ピーク間隔は数ＧＨｚである。The full width at half maximum of the light absorption peak of acetylene is several hundred MHz, and the peak interval is several GHz.
そこで、例えば、周波数が『ａのレーザ光を得たい場合
には、第１の周波数安定化光源９の周波数をｆａ近傍の
アセチレンの光吸収ピークに安定化し、そこから周波数
差を与えて第２の周波数安定化光源１９の周波数をｆａ
に安定させる。このように光吸収ピークを変えることに
より，数百ＧＨｚにわたって周波数を可変することがで
きる。Therefore, for example, if you want to obtain a laser beam with a frequency of a, the frequency of the first frequency stabilized light source 9 is stabilized to the light absorption peak of acetylene near fa, and a frequency difference is given therefrom to obtain a second laser beam. The frequency of the frequency stabilized light source 19 is fa
stabilize it. By changing the optical absorption peak in this way, the frequency can be varied over several hundred GHz.
第３図は、アセチレン（Ｃ２＋１２）の光吸収特性を示
す。横軸は波長（μｍ）．縦軸は光吸収率を示す。FIG. 3 shows the light absorption characteristics of acetylene (C2+12). The horizontal axis is wavelength (μm). The vertical axis shows the light absorption rate.
図から判るように、一般に分子の光吸収には周波数スケ
ール上に、周期的に吸収ピークがいくつも出現すること
が知られている。As can be seen from the figure, it is generally known that a number of absorption peaks appear periodically on the frequency scale in light absorption by molecules.
このような分子の吸収特性を利用して吸収セルを構威し
、この発明の周波数可変形安定化光源を実現するときは
、ピーク１ ， ２， ３．・−・・・．９のいずれの
ピークの近傍で第ｌの周波数安定化光源を安定化させる
ことができる。例えば、第３のピークの右側を用いて、
ｆｍ３＝１．９４１３７４Ｘ １０” ＋１２の発振を
させることができる。When implementing the variable frequency stabilized light source of the present invention by constructing an absorption cell by utilizing the absorption characteristics of such molecules, peaks 1, 2, 3.・－・・・． The l-th frequency-stabilized light source can be stabilized near any of the peaks of 9. For example, using the right side of the third peak,
It is possible to oscillate fm3=1.941374×10”+12.
この場合、第２の周波数安定化光源１９においては、ビ
ート信号検出系の帯域がＩＯｃ；Ｆｉｚであるとすれば
、ｌ．９４１３７４ｘ １０” Ｈｚから１．９４１３
８４Ｘ １０” Ｈｚの範囲で発振周波数を可変できる
。基準電圧源５と第ｌの駆動電流源７を調整すれば、第
１の周波数安定化光源９の発振周波数はｆｍ４． ｆｍ
５， ｆｒｓ６にも調整可能である。In this case, in the second frequency stabilized light source 19, if the band of the beat signal detection system is IOc;Fiz, then l. 941374x 10” Hz to 1.9413
The oscillation frequency can be varied in the range of 84×10” Hz. By adjusting the reference voltage source 5 and the first drive current source 7, the oscillation frequency of the first frequency stabilized light source 9 becomes fm4.fm
5. Can also be adjusted to frs6.
発振周波数ｆ＋＋ｉとｆｍｉ＋１の間隔は、数Ｃｌｌｚ
であり、ビート信号検出系の帯域よりも小さい。そのた
め、安定化に用いるピークを変えることにより第１の半
導体レーザ１の発振可能な周波数の範囲内の全ての周波
数において第２の半導体レーザ１０のレーザ光の周波数
を安定にすることができる。The interval between the oscillation frequencies f++i and fmi+1 is several Cllz
, which is smaller than the band of the beat signal detection system. Therefore, by changing the peak used for stabilization, the frequency of the laser light from the second semiconductor laser 10 can be stabilized at all frequencies within the range of frequencies that the first semiconductor laser 1 can oscillate.
さらに、第２の周波数安定化光源の構戒要素である、ブ
リスケーラ１４、可変信号発生８１５、周波数差信号発
生器１６の出力はいずれも、ディジタル信号処理ができ
るので、この発明の周波数可変型安定化光源はマイクロ
コンピュータを用いたディジタル制御になしみ易い構戒
である。Furthermore, the outputs of the brise scaler 14, the variable signal generator 815, and the frequency difference signal generator 16, which are the control elements of the second frequency stabilized light source, can all be subjected to digital signal processing. The integrated light source is a structure that is easy to adapt to digital control using a microcomputer.
以上、述べるように、本発明による周波数可変型安定化
光源は、第１の半導体レーザから任意の周波数だけずら
し′て第２の半導体レーザのレーザ光の周波数を安定化
することにより、次に示すような固有の効果を有する。As described above, the frequency-variable stabilized light source according to the present invention stabilizes the frequency of the laser light of the second semiconductor laser by shifting the frequency from the first semiconductor laser by an arbitrary frequency. It has such unique effects.
（１）任意の周波数に．安定にしたレーザ光が得られた
。(1) To any frequency. A stable laser beam was obtained.
（２）電気光学素子などの外部変調素子を用いず、ディ
ジタル的に変調周波数を選べるため、高精度な周波数変
調が実現できた。(2) Since the modulation frequency can be selected digitally without using an external modulation element such as an electro-optical element, highly accurate frequency modulation can be achieved.
第ｌ図は本発明による周波数可変型安定化光源の一実施
例の構戒を、第２図は吸収セル中のアセチレンガスの光
吸収スペクトルを、第３図はアセチレンの光吸収特性を
それぞれ示す。
図において、■は第１の半導体レーザ、２は周波数弁別
器、３は第ｌの受光器、４は第１の増幅器、５は基準電
圧源、６は差動増幅器、７は第１の駆動電流源、８は第
１のレーザ光取出用ビームスプリツタ、９は第１の周波
数安定化光源、ＩＯは第２の半導体レーザ、１１は合波
器、１２は第２の受光器、ｌ３は第２の増幅器、１４は
ブリスケーラ、１５は可変信号発生器、ｌ６は周波数差
信号発生器、１７は第２の駆動電流源、ｌ８は第２のレ
ーザ光取出用ビームスプリンタ、１９は第２の周波数安
定化光源をそれぞれ示す。Figure 1 shows the structure of an embodiment of the frequency variable stabilized light source according to the present invention, Figure 2 shows the light absorption spectrum of acetylene gas in the absorption cell, and Figure 3 shows the light absorption characteristics of acetylene. . In the figure, ■ is a first semiconductor laser, 2 is a frequency discriminator, 3 is a first photoreceiver, 4 is a first amplifier, 5 is a reference voltage source, 6 is a differential amplifier, and 7 is a first drive A current source, 8 is a beam splitter for extracting the first laser beam, 9 is a first frequency stabilizing light source, IO is a second semiconductor laser, 11 is a multiplexer, 12 is a second light receiver, l3 is a 14 is a brise scaler, 15 is a variable signal generator, l6 is a frequency difference signal generator, 17 is a second drive current source, l8 is a second laser beam extraction beam splinter, 19 is a second Each shows a frequency stabilized light source.
Claims (1)
ら発振したレーザ光を受ける所定波長範囲の光吸収特性
を利用した周波数弁別器（２）と、該周波数弁別器を通
過させた光を検出する第１の受光器（３）と、該第１の
受光器からの信号により該第１の半導体レーザへの駆動
電流を制御する第１の駆動電流源（７）とからなる第１
の周波数安定化光源（９）と； 第２の半導体レーザ（１０）と、該第２の半導体レーザ
からのレーザ光と該第１の周波数安定化光源（９）から
のレーザ光とを合波する合波器（１１）と、該合波器で
合波することにより発生した光ビート信号を所定範囲の
周波数を持つ電気ビート信号に変換する第２の受光器（
１２）と、該所定範囲内の任意の周波数の信号を発生す
る可変信号発生器（１５）と、該電気ビート信号と該可
変信号発生器からの信号とを受けてそれらの周波数差に
対応した信号を出力する周波数差信号発生器（１６）と
、該周波数差信号発生器からの出力を受けて該第２の半
導体レーザへの駆動電流を制御する第２の駆動電流源（
１７）とからなる第２の周波数安定化光源（１９）とを
備えて成る周波数可変型安定化光源。[Scope of Claims] A first semiconductor laser (1), a frequency discriminator (2) that utilizes light absorption characteristics in a predetermined wavelength range that receives laser light oscillated from the first semiconductor laser, and a frequency discriminator (2) that uses light absorption characteristics in a predetermined wavelength range. a first photodetector (3) that detects the light that has passed through the device; and a first drive current source (7) that controls the drive current to the first semiconductor laser based on the signal from the first photodetector. ) and the first
a frequency-stabilized light source (9); a second semiconductor laser (10); combining the laser light from the second semiconductor laser and the laser light from the first frequency-stabilized light source (9); a second optical receiver (11) that converts the optical beat signal generated by multiplexing in the multiplexer into an electric beat signal having a frequency within a predetermined range.
12), a variable signal generator (15) that generates a signal of any frequency within the predetermined range, and a variable signal generator (15) that receives the electric beat signal and the signal from the variable signal generator and responds to the frequency difference between them. a frequency difference signal generator (16) that outputs a signal; and a second drive current source (16) that receives the output from the frequency difference signal generator and controls the drive current to the second semiconductor laser.
17) and a second frequency stabilized light source (19).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22958589A JPH0391981A (en) | 1989-09-05 | 1989-09-05 | Frequency variable type stabilized light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22958589A JPH0391981A (en) | 1989-09-05 | 1989-09-05 | Frequency variable type stabilized light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0391981A true JPH0391981A (en) | 1991-04-17 |
Family
ID=16894490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22958589A Pending JPH0391981A (en) | 1989-09-05 | 1989-09-05 | Frequency variable type stabilized light source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0391981A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009117101A1 (en) * | 2008-03-18 | 2009-09-24 | Alcatel-Lucent Usa Inc. | Self-calibrating integrated photonic circuit and method of control thereof |
-
1989
- 1989-09-05 JP JP22958589A patent/JPH0391981A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009117101A1 (en) * | 2008-03-18 | 2009-09-24 | Alcatel-Lucent Usa Inc. | Self-calibrating integrated photonic circuit and method of control thereof |
| US7688872B2 (en) | 2008-03-18 | 2010-03-30 | Alcatel-Lucent Usa Inc. | Self-Calibrating integrated photonic circuit and method of control thereof |
| JP2011515853A (en) * | 2008-03-18 | 2011-05-19 | アルカテル−ルーセント ユーエスエー インコーポレーテッド | Self-calibrating integrated optical circuit and control method thereof |
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