JPH0391341A - Phase modulator - Google Patents
Phase modulatorInfo
- Publication number
- JPH0391341A JPH0391341A JP22896189A JP22896189A JPH0391341A JP H0391341 A JPH0391341 A JP H0391341A JP 22896189 A JP22896189 A JP 22896189A JP 22896189 A JP22896189 A JP 22896189A JP H0391341 A JPH0391341 A JP H0391341A
- Authority
- JP
- Japan
- Prior art keywords
- line
- adjustment
- phase
- diodes
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 230000010355 oscillation Effects 0.000 claims abstract description 8
- 230000005540 biological transmission Effects 0.000 claims abstract description 7
- 239000002131 composite material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 241001061264 Astragalus Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000006533 astragalus Nutrition 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 210000004233 talus Anatomy 0.000 description 1
Landscapes
- Digital Transmission Methods That Use Modulated Carrier Waves (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は直接方式による並列パスレンゲ型２相位相変調
器に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a direct-type parallel-pass Astragalus type two-phase phase modulator.
一般にマイクロ波帯における直接方式による２相位相変
調器は、第３図に示すように、ダイオド１，１と、その
周波数帯に見合ったλ／２（但し、λは波長）線路２か
ら構成されているものを展開したものが殆どである。な
お、第３図において、３は変調信号出力線路、６は低周
波信号電圧印加線路である。In general, a two-phase phase modulator using the direct method in the microwave band is composed of diodes 1 and 1 and a λ/2 (where λ is the wavelength) line 2 suitable for the frequency band, as shown in Figure 3. Most of them are expanded versions of what is currently available. In addition, in FIG. 3, 3 is a modulation signal output line, and 6 is a low frequency signal voltage application line.
上記構成の相位相変調器は、理論的には回路として動作
するものであるが、現実には製造上のバラツキやバラツ
キから生じる調整によって理論上のパターンに更に後付
けのスタブ等を加えることによって特性を引き出すもの
であった。The phase modulator with the above configuration theoretically operates as a circuit, but in reality, the characteristics can be changed by adding post-installed stubs, etc. to the theoretical pattern through manufacturing variations and adjustments resulting from variations. It brought out the
そして、これらを行なうことは、直接方式による２位相
変調器の特性の評価の基準となる変調位相誤差・ローカ
ルリーク抑圧・ゲート抑圧比・変調帯域平坦特性等の特
性を損なうことが非常に多しかしながら、上記の如くマ
イクロ波帯においてダイオードを利用して直接方式によ
る２相位相変調器を構成した場合に、所望の特性を引き
出すことが難しいうえ、再現性が得られに＜＜、また調
整個所に目安がつきにくいという欠点があった。However, doing these things very often impairs the characteristics such as modulation phase error, local leak suppression, gate suppression ratio, and modulation band flatness characteristics, which are the criteria for evaluating the characteristics of a two-phase modulator using the direct method. As mentioned above, when constructing a direct two-phase phase modulator using diodes in the microwave band, it is difficult to bring out the desired characteristics, it is difficult to obtain reproducibility, and it is difficult to adjust the adjustment points. The drawback was that it was difficult to determine a guideline.
本発明は上述の点に鑑みてなされたもので上記欠点を除
去し、特性の再現性が良く、定量的に調整を行なうこと
ができ、且つ特性の向上が図れる上記課題を解決するた
め本発明は、２つのダイオードと周波数帯域に見合った
線路パターンを具備するマイクロ波帯における直接方式
によ並列パスレングス型２相位相変調器において、前記
ダイオードのアノード及びカソードに調整線路を設け、
２つのλ／２（入は使用周波数の波長）のインピーダン
ス変換線路を配置し、該インピーダンス変換線路の中点
であるλ／４の点にアノード又はカソード接続した前記
２つのダイオードを並列に続すると共に、該ダイオード
の他方のカソード又はアノードに低周波信号電圧を印加
する線路を配置し、一方の前記変換線路の端にＯ。The present invention has been made in view of the above points, and in order to solve the above problems, the present invention eliminates the above drawbacks, has good reproducibility of characteristics, allows quantitative adjustment, and improves characteristics. In the direct method parallel path length type two-phase phase modulator in the microwave band, which is equipped with two diodes and a line pattern suitable for the frequency band, an adjustment line is provided at the anode and cathode of the diode,
Two λ/2 (input is the wavelength of the frequency used) impedance conversion lines are arranged, and the two diodes whose anodes or cathodes are connected to the λ/4 point, which is the midpoint of the impedance conversion lines, are connected in parallel. At the same time, a line for applying a low frequency signal voltage is arranged to the other cathode or anode of the diode, and an O is placed at one end of the conversion line.
位相の局部発振信号入力線路をもう一方の変換線路に該
局部発振信号入力線路と更にλ／２分延長したことによ
って局部発振信号入力信号の位相を１８０°遅らせた線
路を接続し、前記２つの変換線路の他端には合成線路と
して入線路を接続し、該合成線路の入／２の点に伝送線
路を配置することによって２値の位相変調信号を出力す
ることを特徴とする。A line in which the phase of the local oscillation signal input signal is delayed by 180° by extending the local oscillation signal input line by λ/2 further than the local oscillation signal input line is connected to the other conversion line, and the above two The present invention is characterized in that an input line is connected to the other end of the conversion line as a composite line, and a transmission line is placed at the input/2 point of the composite line, thereby outputting a binary phase modulation signal.
上記の如くダイオードのアノード及びカソードに調整線
路を設けることにより、マイクロ波帯においてダイオー
ドが持つリアクタンス成分が打ち消されるので、ダイオ
ードの特性を充分に生かすことができる。By providing the adjustment line at the anode and cathode of the diode as described above, the reactance component of the diode in the microwave band is canceled out, so that the characteristics of the diode can be fully utilized.
また、２つのλ／２のインピーダンス変換線路の中点に
２つのダイオードのアノード又はカソードを接続するの
で、ダイオードの０Ｎ−ＯＦＦ時の抵抗値の違いから信
号線路との間に生ずる不整合に基づく、振幅のアンバラ
ンス及び位相誤差を防ぐことができる。In addition, since the anodes or cathodes of the two diodes are connected to the midpoint of the two λ/2 impedance conversion lines, there is a mismatch between the diodes and the signal line due to the difference in resistance value when the diodes are turned on and off. , amplitude unbalance and phase error can be prevented.
また、合成線路のλ／２の点に伝送線路を配置するので
、変調出力信号に影響を与えることがない。Furthermore, since the transmission line is placed at the λ/2 point of the composite line, it does not affect the modulated output signal.
以下、本発明の一実施例を図面に基づいて説明する。 Hereinafter, one embodiment of the present invention will be described based on the drawings.
第１図は本発明に係る位相変調器の構成を示す図である
。図示するように、位相変調器は、ダイオード１，１、
該ダイオード１，１のアノード又はカソードが接続され
たインピーダンス変換路４．４、該インピーダンス変換
路４，４の一端に接続された３人７２線路５、該インピ
ーダンス変換路４，４の他端に接続された出力合成線路
１１、低周波信号電圧印加線路６，６、局発入力信号線
７、変調信号出力線路８、調整−１線路９及び調整−２
線路１０より構成される。FIG. 1 is a diagram showing the configuration of a phase modulator according to the present invention. As shown, the phase modulator includes diodes 1,1,
An impedance conversion path 4.4 to which the anodes or cathodes of the diodes 1, 1 are connected, a three-person 72 line 5 connected to one end of the impedance conversion path 4, 4, and an impedance conversion path 4.4 connected to the other end of the impedance conversion path 4, 4. The connected output synthesis line 11, low frequency signal voltage application lines 6, 6, local input signal line 7, modulation signal output line 8, adjustment-1 line 9 and adjustment-2
It is composed of a line 10.
上記構成の位相変調器において、ダイオード１の周辺の
パターンは、第２図に示す様に高周波的にダイオード１
が持つリアクタンス成分であるインダクタンス１２及び
浮遊容量１３を打ち消すことにより、マイクロ波帯にお
いて充分にダイオードのスイッチング動作が行なえるよ
うに、調整１線路９及び調整−２線路１０を配置する。In the phase modulator with the above configuration, the pattern around the diode 1 is such that the pattern around the diode 1 is high-frequency, as shown in FIG.
The adjustment 1 line 9 and adjustment 2 line 10 are arranged so that the switching operation of the diode can be performed sufficiently in the microwave band by canceling out the inductance 12 and the stray capacitance 13 which are reactance components of the adjustment 1 line 9 and the adjustment 2 line 10.
そしてさらに、低周波信号電圧印加線路６に加えられる
低周波信号電圧が比較的高速である２相位相変調器にお
いて、広帯域化が要求される場合等に、位相変調誤差を
低減させたり、ダイオード１．１をバランス良く駆動さ
せるため、局発入力信号線７と変調信号出力線路８の間
に使用する周波数帯の波長λのλ／２長のインピーダン
ス変換路４，４を配置し、変換インピーダンス値を設定
する。この人／２長のインピーダンス変換路４゜４の中
点であるλ／４長の点にダイオード１，１を配置するこ
とにより、マイクロ波帯の伝送線路のインピーダンスに
対して忠実にダイオードが動作するように各線路を設定
する。Furthermore, in a two-phase phase modulator in which the low-frequency signal voltage applied to the low-frequency signal voltage application line 6 is relatively high-speed, when a wide band is required, the phase modulation error can be reduced, and the diode 1 In order to drive .1 in a well-balanced manner, an impedance conversion path 4, 4 with a length of λ/2 of the wavelength λ of the frequency band to be used is arranged between the local oscillator input signal line 7 and the modulated signal output line 8, and the converted impedance value is Set. By placing the diodes 1 and 1 at the point of λ/4 length, which is the midpoint of this length of impedance conversion path 4°4, the diodes operate faithfully to the impedance of the transmission line in the microwave band. Set each line so that
また、２相位相変調器としての構成は従来は第３図に示
すように、使用周波数帯域のλ／２線路２を用いること
によって局部発振信号を１８０″′位相を遅らせてダイ
オード１，１に低周波電圧を印加するものと、λ／２線
路２を介さないでＯ。Conventionally, the configuration of a two-phase phase modulator is as shown in Fig. 3, by using a λ/2 line 2 in the frequency band used, the local oscillation signal is delayed by 180'' phase and sent to the diodes 1 and 1. One that applies a low frequency voltage and one that does not go through the λ/2 line 2.
位相を低周波電圧を印加した信号を合成することによっ
て２値の位相変調出力を得ていたが、ダイオード１，１
の実装上の問題から、第１図に示すように１波長分を長
くすることによって、等倒曲にλ／２線路を構成し、３
λ／２線路５を使用している。また、２つのダイオード
１，１を使用するため、伝送線路のハイブリット合成を
考慮してλ長の出力合成線路１１を接続しその中点であ
る入／２に変調信号出力線路８を接続することによって
、変調出力信号に影響を与えないよう構成している。Binary phase modulation output was obtained by combining signals with low frequency voltage applied to the phase, but the diode 1, 1
Due to the implementation problem, as shown in Figure 1, by increasing the length by one wavelength, a λ/2 line is constructed with equal inclination, and 3
A λ/2 line 5 is used. In addition, since two diodes 1 and 1 are used, in consideration of hybrid synthesis of transmission lines, a λ-long output synthesis line 11 is connected, and the modulation signal output line 8 is connected to the input/2 which is the midpoint of the output synthesis line 11. The configuration is such that it does not affect the modulated output signal.
第４図は上記構成の位相変調器の動作を説明するための
図である。同図において、ＢＢはベースバンド信号、ｆ
’ｔｏは局発入力信号である。ベースバンド信号ＢＢは
デジタル信号のデータ信号で様々な伝送速度があり、低
周波信号電圧印加線路６．６に入力される。また、局発
入力信号ｆ’Ｌｏは局発入力信号線７に入力される。局
発入力信号ｆＬＯに重畳されたベースバンド信号ＢＢが
変調信号として、変調信号出力線路８から出力される。FIG. 4 is a diagram for explaining the operation of the phase modulator having the above configuration. In the figure, BB is a baseband signal, f
'to is a local input signal. The baseband signal BB is a digital data signal with various transmission speeds, and is input to the low frequency signal voltage application line 6.6. Further, the local input signal f'Lo is input to the local input signal line 7. Baseband signal BB superimposed on local input signal fLO is output from modulation signal output line 8 as a modulation signal.
なお、上記インピーダンス変換路４，４．３λ／２線路
５、出力合成線路１１、低周波信号電圧印加線路６，６
、局発入力信号線７、変調信号出力線路８、調整−１線
路９及び調整−２線路１０は、例えばアルミナ等のセラ
ミックス基板の上に金等の金属で形成している。In addition, the impedance conversion path 4, 4.3λ/2 line 5, output synthesis line 11, low frequency signal voltage application line 6, 6
, the local input signal line 7, the modulation signal output line 8, the adjustment-1 line 9, and the adjustment-2 line 10 are formed of metal such as gold on a ceramic substrate such as alumina.
以上説明したように本発明によれば、下記のような優れ
た効果が得られる。As explained above, according to the present invention, the following excellent effects can be obtained.
■マイクロ波帯において直接位相変調器の設計が理論的
に行なえる。■Direct phase modulator design can be theoretically performed in the microwave band.
■特性の再現性が図れる。■Reproducibility of characteristics can be achieved.
■調整を定量的に行なうことができる。■Adjustments can be made quantitatively.
■直接位相変調器の特性の向上が図れる。■It is possible to improve the characteristics of the direct phase modulator.
■パターン設計の時間を短縮することができる。- Pattern design time can be shortened.
■準ミリ波領域においても使用することができる′。■It can also be used in the sub-millimeter wave range.
来の位相変調器の構成を示す図、第４図は本発明に係る
位相変調器の動作を説明するための図である。
図中、１・・・・ダイオード、２・・・・λ／２線路、
３・・・・変調信号出力線路、４・・・・インピーダン
ス変換路、５・・・・３λ／２線路、６・・・・低周波
信号電圧印加線路、７・・・・局発入力信号線、８・・
・・変調信号出力線路、９・・・・調整−１線路、１０
・・・調整−２線路、１１・・・・出力合成線路、１２
インダクタンス、１３・・・・浮遊容量。FIG. 4 is a diagram showing the configuration of a conventional phase modulator, and is a diagram for explaining the operation of the phase modulator according to the present invention. In the figure, 1...diode, 2...λ/2 line,
3...Modulation signal output line, 4...Impedance conversion path, 5...3λ/2 line, 6...Low frequency signal voltage application line, 7...Local input signal Line, 8...
...Modulation signal output line, 9...Adjustment-1 line, 10
... Adjustment-2 line, 11... Output composite line, 12
Inductance, 13... Stray capacitance.
Claims (1)
を具備するマイクロ波帯における直接方式による並列パ
スレングス型２相位相変調器において、 前記ダイオードのアノード及びカソードに調整線路を設
け、２つのλ／２（λは使用周波数の波長）のインピー
ダンス変換線路を配置し、 該インピーダンス変換線路の中点であるλ／４の点にア
ノード又はカソード接続した前記２つのダイオードを並
列に接続すると共に、該ダイオードの他方のカソード又
はアノードに低周波信号電圧を印加する線路を配置し、 一方の前記変換線路の端に０゜位相の局部発振信号入力
線路をもう一方の変換線路に該局部発振信号入力線路と
更にλ／２分延長したことによって局部発振信号入力信
号の位相を１８０゜遅らせた線路を接続し、 前記２つの変換線路の他端には合成線路としてλ線路を
接続し、該合成線路のλ／２の点に伝送線路を配置する
ことによって２値の位相変調信号を出力することを特徴
とする位相変調器。[Claims] A parallel path length two-phase phase modulator using a direct method in the microwave band, which is equipped with two diodes and a line pattern suitable for the frequency band, comprising: providing an adjustment line at the anode and cathode of the diode; Arrange two λ/2 (λ is the wavelength of the frequency used) impedance conversion lines, and connect the two diodes whose anodes or cathodes are connected in parallel to the λ/4 point, which is the midpoint of the impedance conversion lines. At the same time, a line for applying a low frequency signal voltage is arranged to the other cathode or anode of the diode, and a 0° phase local oscillation signal input line is connected to one end of the conversion line, and the local oscillation signal input line is connected to the other conversion line. A line that is further extended by λ/2 to delay the phase of the local oscillation signal input signal by 180 degrees is connected to the signal input line, and a λ line is connected as a composite line to the other end of the two conversion lines. A phase modulator that outputs a binary phase modulation signal by arranging a transmission line at a point λ/2 of a composite line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22896189A JPH0391341A (en) | 1989-09-04 | 1989-09-04 | Phase modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22896189A JPH0391341A (en) | 1989-09-04 | 1989-09-04 | Phase modulator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0391341A true JPH0391341A (en) | 1991-04-16 |
Family
ID=16884577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22896189A Pending JPH0391341A (en) | 1989-09-04 | 1989-09-04 | Phase modulator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0391341A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5574409A (en) * | 1994-10-25 | 1996-11-12 | Nec Corporation | Apparatus and method for adjusting microwave BPSK modulator and mixer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6181057A (en) * | 1984-09-28 | 1986-04-24 | Toshiba Corp | 0-pi phase modulator |
| JPS6261401A (en) * | 1985-09-11 | 1987-03-18 | Sumitomo Electric Ind Ltd | Pin diode switch |
| JPS63161701A (en) * | 1986-12-25 | 1988-07-05 | Nippon Telegr & Teleph Corp <Ntt> | Microwave switch |
-
1989
- 1989-09-04 JP JP22896189A patent/JPH0391341A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6181057A (en) * | 1984-09-28 | 1986-04-24 | Toshiba Corp | 0-pi phase modulator |
| JPS6261401A (en) * | 1985-09-11 | 1987-03-18 | Sumitomo Electric Ind Ltd | Pin diode switch |
| JPS63161701A (en) * | 1986-12-25 | 1988-07-05 | Nippon Telegr & Teleph Corp <Ntt> | Microwave switch |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5574409A (en) * | 1994-10-25 | 1996-11-12 | Nec Corporation | Apparatus and method for adjusting microwave BPSK modulator and mixer |
| EP0709991A3 (en) * | 1994-10-25 | 1997-11-26 | Nec Corporation | Apparatus and method for adjusting microwave BPSK modulator and mixer |
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