JPH0384502A - Grid polarizer - Google Patents
Grid polarizerInfo
- Publication number
- JPH0384502A JPH0384502A JP22233789A JP22233789A JPH0384502A JP H0384502 A JPH0384502 A JP H0384502A JP 22233789 A JP22233789 A JP 22233789A JP 22233789 A JP22233789 A JP 22233789A JP H0384502 A JPH0384502 A JP H0384502A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- grid
- patterns
- transmittance
- grid polarizer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000002834 transmittance Methods 0.000 claims abstract description 22
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims 1
- 230000010287 polarization Effects 0.000 abstract description 15
- PGAPATLGJSQQBU-UHFFFAOYSA-M thallium(i) bromide Chemical compound [Tl]Br PGAPATLGJSQQBU-UHFFFAOYSA-M 0.000 abstract 3
- 229910018487 Ni—Cr Inorganic materials 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
A 産業上の利用分野
本発明は赤外域で有効な偏光素子であるグリッド偏光子
に関する。DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to a grid polarizer which is a polarizing element effective in the infrared region.
B 従来技術とその問題点
グリッド偏光子は第3図に示すように導体細線七対象党
の波長以下のピッチdでグリグド状に平行に配列させた
もので、導体グリッドと平行な方向に振動して−7)光
の電界成分はこのグリッド偏光子Gで反射され、導体グ
リアトと垂直な方向に振動している光の電界成分はグリ
7ド偏光子を透過する性質を有する。グリブト偏光子G
は導体グリッドのピッチdと幅aがその偏光特性に影響
するピッチ間隔dが小さい程偏光特性が良くなシ、a/
dは0.5〜0.7が良いとされている。従って使用波
長が短かくなAげなる程、導体グリッドGのピッチdy
z小さくしなければならないが、小さくすれば、導体グ
リッド単独で導体間の隙間を中空状態に維持することが
難しくなるので透明基板上に導体グリブト金形成してい
るウ
グリッド偏光子は可視域と異なシ適当な偏光材料のない
赤外域では有効な偏光素子であるが可視域の偏光プリズ
ム等に比べると偏光度や消光比等偏光特性が劣るという
欠点があシ、純度の高い偏光光を必要とする測定等の分
野ではよシー層の偏光特性の改善が望まれている。また
。B. Prior art and its problems As shown in Fig. 3, a grid polarizer is a grid polarizer in which fine conductor wires are arranged in parallel in a grid pattern with a pitch d that is less than the wavelength of seven conductor grids, and the polarizer vibrates in a direction parallel to the conductor grid. -7) The electric field component of the light is reflected by this grid polarizer G, and the electric field component of the light vibrating in the direction perpendicular to the conductor grid has a property of being transmitted through the grid polarizer. Gribut polarizer G
The pitch d and width a of the conductor grid affect its polarization characteristics.The smaller the pitch distance d is, the better the polarization characteristics are.A/
It is said that d is preferably 0.5 to 0.7. Therefore, the shorter the wavelength A, the pitch dy of the conductor grid G.
z must be made small, but if it is made small, it will be difficult to maintain the gap between the conductors in a hollow state with the conductor grid alone. Although it is an effective polarizing element in the infrared region where there is no suitable polarizing material, it has the disadvantage that it has inferior polarization properties such as polarization degree and extinction ratio compared to polarizing prisms in the visible region, and requires highly pure polarized light. In the field of measurement, etc., it is desired to improve the polarization properties of the optical shield layer. Also.
可視域の長波長域から赤外域筐で金1枚でカバーできる
グリッド偏光子が望まれていた。There was a desire for a grid polarizer that could cover the long wavelength range of the visible range to the infrared range with a single piece of gold.
の長波長側1でカバーするためには、ピッチ0゜1μm
8度のグリッド偏光子が必要であシ、現在の製作技術で
は非常に困難であった。In order to cover the long wavelength side 1, the pitch is 0°1 μm.
An 8 degree grid polarizer is required, which is extremely difficult with current manufacturing technology.
本発明は、1枚のグリッド偏光子で広い波長範囲上カバ
ーし、入射角に対する偏光特性の劣下が少ないという特
徴を有した壕ま、飛躍的に偏光特性の優れたグリ1ド偏
党子乞提供することを目的とする。The present invention is a grid polarizer that covers a wide wavelength range with a single grid polarizer and has the characteristics of little deterioration of polarization characteristics depending on the incident angle. The purpose is to provide a solicitation.
C発明の構成
本発明のグリブト偏光子は、測定光に対して高透A率の
基板の両面に、導体の高密度の平行線パターンに形成し
、かつ基板の両面のグリッドの配列方向が平行になるよ
う形成したものである。C Structure of the Invention The Glybut polarizer of the present invention is formed by forming a conductor in a high-density parallel line pattern on both sides of a substrate that has a high transmittance to measurement light, and in which the grids on both sides of the substrate are arranged in parallel. It was formed to be.
中空のグリッド偏光子のグリ1ド方向に垂直な偏光(S
偏i)の熾過率金Tl、平行な偏光(P偏光)の透過率
’kTzとする。基板の片面にのみグリッドを形成した
従来のグリッド偏光子では基板透過率をTとすれば、S
@九透過率#iT HT。Polarized light perpendicular to the grid direction of the hollow grid polarizer (S
Let the transmission rate of polarized i) be gold Tl, and the transmittance of parallel polarized light (P-polarized light) 'kTz. In a conventional grid polarizer in which a grid is formed only on one side of the substrate, if the substrate transmittance is T, then S
@9 Transmittance #iT HT.
P偏光透過率はT2Tとなシ。P polarized light transmittance is T2T.
今1本発明によシ基板両面にグリッドの配列方向が基板
両型で平行になるようグリクド全形戎したグリッド偏光
子の場合、S偏光透過率はT、 XTXT、 4= T
? T、 、同様にP偏光透過率ハT未Tとなう。In the case of a grid polarizer according to the present invention in which the entire grid is cut out on both sides of the substrate so that the grid arrangement direction is parallel to both sides of the substrate, the S-polarized light transmittance is T, XTXT, 4=T
? Similarly, the P-polarized light transmittance becomes T and T.
ここで従来の片面グリッド偏光子の代表的な′ii値で
あル基板透過率T = 0.7 、 T+ =0.98
。Here, the typical 'ii values of a conventional single-sided grid polarizer are substrate transmittance T = 0.7, T+ = 0.98.
.
’r2= 0.02で両君の偏光度を比べると、従来品
ではS偏光透過率は0.69 (69%)、P偏光透過
率は0.014 (1,4%)、偏′y、度は0.96
(96%)となる。他方1本発明のグリッド偏光子の場
合。Comparing the degrees of polarization for both at 'r2 = 0.02, the conventional product has an S polarization transmittance of 0.69 (69%), a P polarization transmittance of 0.014 (1.4%), and a polarization 'y , the degree is 0.96
(96%). On the other hand, in the case of the grid polarizer of the present invention.
S偏51e透過率H0,67(674) 、 P偏ft
、透過率ハ2.8 X 10−’ (0,028隼)、
偏光度は0.999 (99,9%)となシ、従来品に
比べてS偏光透過率の減少はほとんどなく、それに比し
てP偏光透過率が著しく低減でき、偏光度もほとんどl
となシ著しく性能が向上した。S-biased 51e transmittance H0,67(674), P-biased ft
, transmittance 2.8 x 10-' (0,028 Hayabusa),
The degree of polarization is 0.999 (99.9%), and compared to conventional products, there is almost no decrease in S-polarized light transmittance, and compared to that, P-polarized light transmittance can be significantly reduced, and the polarization degree is almost l.
Performance has improved significantly.
D実施例
第1図は本発明の一実施例の構成を示す。両面研磨した
KH2−5基板1(厚さ2 m 、外径30nφ)の両
面にAuのグリッドパターン3がそのパターンの配列方
向が基板の両面で平行になるように配列して形成した。Embodiment D FIG. 1 shows the structure of an embodiment of the present invention. Au grid patterns 3 were formed on both sides of a double-sided polished KH2-5 substrate 1 (thickness: 2 m, outer diameter: 30 nφ) so that the directions of the patterns were parallel to each other on both sides of the substrate.
基板とAuグリッドパターンの付着力を強めるため、
KH2−5基板1とAuグリッドパターン3の間に厚さ
20′にのNi−Crパターン2を形成している。 K
H2−5基板1は赤外域全体で透過率がよく、かつ可夜
域にかいても透過率がよ<0.6μm〜60μ冨あたシ
の領域で透明であシ、その透過率は7096程度である
。グリッドパターン3のピッチは0.4μ鳳とした。従
来はピッチ0,4μmでは使用波長範囲は2μ鳳よシ長
い方であったが。In order to strengthen the adhesion between the substrate and the Au grid pattern,
A Ni--Cr pattern 2 with a thickness of 20' is formed between the KH2-5 substrate 1 and the Au grid pattern 3. K
The H2-5 substrate 1 has good transmittance in the entire infrared region, and also has good transmittance in the night range. That's about it. The pitch of the grid pattern 3 was 0.4μ. Conventionally, with a pitch of 0.4 μm, the wavelength range used was longer than 2 μm.
本発明によう0.6μmよシ長い波長範囲でも使用でき
るようになった。According to the present invention, it has become possible to use the wavelength range longer than 0.6 μm.
第2図に本発明の実施例の製作工程を示す。FIG. 2 shows the manufacturing process of an embodiment of the present invention.
四 KH2−5基板1の片面にN1−CR層2に厚さ2
0 Aで、AU層3を厚さ1000 Aで順に真空蒸着
しさらにフォトレジスト4として0FPR5000M2
O3人にスビンコー)L、90℃で30分間フレツシエ
エアオーブンでプリベークt−行った。4 N1-CR layer 2 with a thickness of 2 on one side of the KH2-5 board 1
At 0 A, AU layer 3 was sequentially vacuum-deposited to a thickness of 1000 A, and then photoresist 4 was deposited with 0FPR5000M2.
Pre-baked in a fresh air oven at 90°C for 30 minutes.
(B) 上記−で形成したフォトレジスト4上にホロ
グラフイクジ露光法により2九束干渉縞乞焼き付けた1
党源にばHe −Cdレーザー(λ=4416A)i用
い、スベイシャルフイμターと411外放吻面睨により
平行光束に作シ、ピクチ間隔は0.4 Plnl<25
00X/Ml) 、!: L7’c。次Kifi’kf
l’k。(B) Two nine-bundle interference fringes were printed on the photoresist 4 formed in step - above by the holographic exposure method.
For the source, a He-Cd laser (λ = 4416A) is used, a parallel light beam is created by a sub-spatial filter and a 411 external radial lens, and the picture interval is 0.4 Plnl<25
00X/Ml),! : L7'c. NextKifi'kf
l'k.
フォトレジスト4の断面形状が正弦半波状、即チa /
dが0.5となるようにした。この断面形状の調gは
、露光時間と現像時間の調整によって行うことができる
。The cross-sectional shape of the photoresist 4 is a half-sine wave, that is, a /
d was set to 0.5. The cross-sectional shape can be adjusted by adjusting the exposure time and development time.
(C)次に、上記フォトレジストパターン4をマスクと
してArイオンビームエ7チング金行い。(C) Next, Ar ion beam etching was performed using the photoresist pattern 4 as a mask.
N1−CrJ曽2.AU層3のグリフドパターンに形r
況した。N1-CrJ So2. The glyphed pattern of AU layer 3 has a shape r.
There was a situation.
上記人rイオンビームエグチングは加速電圧500ev
、ガス圧1.6 X 10−’ Torr o条件下テ
行ッた。The above human r ion beam etching has an acceleration voltage of 500ev.
, under gas pressure of 1.6 x 10-' Torro.
(鵡 次に・エツチングガスクとして用いたフォトレジ
スト4會バレμタイププラズマエツチング装置を用いて
02プラズマで灰化除去した。(Next, the photoresist used as an etching gas was removed by ashing with 02 plasma using a 4-hole μ type plasma etching device.
この後再びグリフドパターンが形成されていない裏面に
、上記(A) (B) (C)(ロ)の同じ行程@(ト
)(q(ロ)を行い、グリッド偏光子を完成させた。上
記実施例では片面にグリフドを形成して次にもう片面に
グリ7ド金形成させたが、各工程を両面同時に行うこと
もできる。Thereafter, the same steps of (A), (B), (C), and (b) above were performed again on the back surface on which the glyphed pattern was not formed, to complete a grid polarizer. In the above embodiment, the graffiti was formed on one side and then the graffiti was formed on the other side, but each step can also be performed on both sides simultaneously.
上記実施例では、導体グリフド3にAu f用い導体付
着膜2は不要である。また、導体グリフド5にλ11に
用いた場合はエツチングガスとして四塩化炭酸ガス(C
C14)を用する。In the above embodiment, the Au f conductor attachment film 2 is not required on the conductor glyph 3. In addition, when using λ11 in the conductor glyph 5, carbon dioxide gas (C
C14) is used.
また、上記実施例でばKH2−5基板を用いているがこ
れに限定されるものではなく、所望の波長範囲で透明な
基板音用いればよいことはいうまでもない。さらに、透
明率が悪い基板の場合吸収が少ないものに関しては両面
に反射防止膜上形成した基板を使用すればよい。これに
よう狭い波長範囲にかいては透明率をほぼ100形にす
ることができ、さらに偏光性能の向上が期待できる。Further, although the KH2-5 substrate is used in the above embodiment, the present invention is not limited to this, and it goes without saying that a transparent substrate sound within a desired wavelength range may be used. Furthermore, in the case of a substrate with poor transparency and low absorption, a substrate coated with an antireflection film on both sides may be used. In such a narrow wavelength range, the transparency can be made approximately 100, and further improvement in polarization performance can be expected.
、E 発明の効果
本発明のグリッド偏光子は、基板の両面に配列方向が等
しくなるように高密度で平行な導体パターン會形成した
構成であるので、グリッド偏光子の性能が飛躍的に同上
し、可視域の長波長#J″&で使用できるようになった
。, E Effects of the Invention Since the grid polarizer of the present invention has a configuration in which high-density, parallel conductor patterns are formed on both sides of the substrate so that the arrangement direction is the same, the performance of the grid polarizer is dramatically improved. , can now be used at long wavelengths #J''& in the visible range.
第1図d本発明の一実施例の構成図、第2図は本発明の
一実施例の製作工程図、第3図はグリッド偏光子の原理
園である。FIG. 1d is a block diagram of an embodiment of the present invention, FIG. 2 is a manufacturing process diagram of an embodiment of the present invention, and FIG. 3 is a diagram of the principle of a grid polarizer.
Claims (1)
長域で高透過率の、あるいは広い波長域にわたって透過
域をもつ基板の両面に金属導体の高密度の平行線パター
ンを、その配列方向が基板の両面で平行になるようにし
て形成したことを特徴とするグリッド偏光子。(1) A high-density parallel line pattern of metal conductors is arranged on both sides of a substrate that has high transmittance in a desired wavelength range in the infrared or visible long wavelength range, or has a transmittance range over a wide wavelength range. A grid polarizer characterized by being formed so that the directions are parallel on both sides of a substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1222337A JP2659024B2 (en) | 1989-08-29 | 1989-08-29 | Grid polarizer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1222337A JP2659024B2 (en) | 1989-08-29 | 1989-08-29 | Grid polarizer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0384502A true JPH0384502A (en) | 1991-04-10 |
JP2659024B2 JP2659024B2 (en) | 1997-09-30 |
Family
ID=16780766
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1222337A Expired - Fee Related JP2659024B2 (en) | 1989-08-29 | 1989-08-29 | Grid polarizer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2659024B2 (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994011766A1 (en) * | 1992-11-09 | 1994-05-26 | Honeywell Inc. | A reflective polarizer |
US6108131A (en) * | 1998-05-14 | 2000-08-22 | Moxtek | Polarizer apparatus for producing a generally polarized beam of light |
US6243199B1 (en) * | 1999-09-07 | 2001-06-05 | Moxtek | Broad band wire grid polarizing beam splitter for use in the visible wavelength region |
EP1158319A2 (en) * | 2000-05-22 | 2001-11-28 | Jasco Corporation | Wire grid type polarizer and method of manufacturing the same |
US6714350B2 (en) * | 2001-10-15 | 2004-03-30 | Eastman Kodak Company | Double sided wire grid polarizer |
JP2009157071A (en) * | 2007-12-26 | 2009-07-16 | Cheil Industries Inc | Wire grid polarizer and its manufacturing method |
JP2011070219A (en) * | 2000-01-11 | 2011-04-07 | Moxtek Inc | Imbedded wire-grid polarizer for visible spectrum |
JP2011141574A (en) * | 1999-06-22 | 2011-07-21 | Moxtek Inc | Broadband wire grid polarizer for visible spectrum |
US8913321B2 (en) | 2010-09-21 | 2014-12-16 | Moxtek, Inc. | Fine pitch grid polarizer |
US8913320B2 (en) | 2011-05-17 | 2014-12-16 | Moxtek, Inc. | Wire grid polarizer with bordered sections |
US8922890B2 (en) | 2012-03-21 | 2014-12-30 | Moxtek, Inc. | Polarizer edge rib modification |
US8947772B2 (en) | 2006-08-31 | 2015-02-03 | Moxtek, Inc. | Durable, inorganic, absorptive, ultra-violet, grid polarizer |
JP2015200677A (en) * | 2011-10-31 | 2015-11-12 | 日本精工株式会社 | optical scale and optical encoder |
US9632223B2 (en) | 2013-10-24 | 2017-04-25 | Moxtek, Inc. | Wire grid polarizer with side region |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4289381A (en) * | 1979-07-02 | 1981-09-15 | Hughes Aircraft Company | High selectivity thin film polarizer |
JPS5842003A (en) * | 1981-09-07 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | Polarizing plate |
JPS6066203A (en) * | 1983-09-22 | 1985-04-16 | Matsushita Electric Ind Co Ltd | Polarizing element |
JPS61155801U (en) * | 1985-03-19 | 1986-09-27 |
-
1989
- 1989-08-29 JP JP1222337A patent/JP2659024B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4289381A (en) * | 1979-07-02 | 1981-09-15 | Hughes Aircraft Company | High selectivity thin film polarizer |
JPS5842003A (en) * | 1981-09-07 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | Polarizing plate |
JPS6066203A (en) * | 1983-09-22 | 1985-04-16 | Matsushita Electric Ind Co Ltd | Polarizing element |
JPS61155801U (en) * | 1985-03-19 | 1986-09-27 |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994011766A1 (en) * | 1992-11-09 | 1994-05-26 | Honeywell Inc. | A reflective polarizer |
US6108131A (en) * | 1998-05-14 | 2000-08-22 | Moxtek | Polarizer apparatus for producing a generally polarized beam of light |
JP2011141574A (en) * | 1999-06-22 | 2011-07-21 | Moxtek Inc | Broadband wire grid polarizer for visible spectrum |
US6243199B1 (en) * | 1999-09-07 | 2001-06-05 | Moxtek | Broad band wire grid polarizing beam splitter for use in the visible wavelength region |
JP2011070219A (en) * | 2000-01-11 | 2011-04-07 | Moxtek Inc | Imbedded wire-grid polarizer for visible spectrum |
EP1158319A3 (en) * | 2000-05-22 | 2003-10-15 | Jasco Corporation | Wire grid type polarizer and method of manufacturing the same |
EP1158319A2 (en) * | 2000-05-22 | 2001-11-28 | Jasco Corporation | Wire grid type polarizer and method of manufacturing the same |
US6714350B2 (en) * | 2001-10-15 | 2004-03-30 | Eastman Kodak Company | Double sided wire grid polarizer |
US8947772B2 (en) | 2006-08-31 | 2015-02-03 | Moxtek, Inc. | Durable, inorganic, absorptive, ultra-violet, grid polarizer |
JP2009157071A (en) * | 2007-12-26 | 2009-07-16 | Cheil Industries Inc | Wire grid polarizer and its manufacturing method |
US8913321B2 (en) | 2010-09-21 | 2014-12-16 | Moxtek, Inc. | Fine pitch grid polarizer |
US8913320B2 (en) | 2011-05-17 | 2014-12-16 | Moxtek, Inc. | Wire grid polarizer with bordered sections |
JP2015200677A (en) * | 2011-10-31 | 2015-11-12 | 日本精工株式会社 | optical scale and optical encoder |
US9410858B2 (en) | 2011-10-31 | 2016-08-09 | Nsk Ltd. | Optical scale having wires, method for manufacturing optical scale having wires,and optical encode |
US8922890B2 (en) | 2012-03-21 | 2014-12-30 | Moxtek, Inc. | Polarizer edge rib modification |
US9632223B2 (en) | 2013-10-24 | 2017-04-25 | Moxtek, Inc. | Wire grid polarizer with side region |
Also Published As
Publication number | Publication date |
---|---|
JP2659024B2 (en) | 1997-09-30 |
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