JPH038209A - Composition for thick film - Google Patents
Composition for thick filmInfo
- Publication number
- JPH038209A JPH038209A JP1140474A JP14047489A JPH038209A JP H038209 A JPH038209 A JP H038209A JP 1140474 A JP1140474 A JP 1140474A JP 14047489 A JP14047489 A JP 14047489A JP H038209 A JPH038209 A JP H038209A
- Authority
- JP
- Japan
- Prior art keywords
- copper powder
- average particle
- particle size
- granular
- thick film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 81
- 239000002245 particle Substances 0.000 claims abstract description 43
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 claims abstract description 11
- 229920005989 resin Polymers 0.000 claims abstract description 7
- 239000011347 resin Substances 0.000 claims abstract description 7
- 239000002904 solvent Substances 0.000 claims abstract description 7
- 238000002156 mixing Methods 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 abstract description 25
- 238000005476 soldering Methods 0.000 abstract description 23
- 230000004907 flux Effects 0.000 abstract description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005065 mining Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000036541 health Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電子機器に用いられる印刷配線板の導体回路
形成に用いる厚膜用組成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thick film composition used for forming conductor circuits on printed wiring boards used in electronic devices.
従来の技術
従来の印刷配線板の製造方法を大別すると、サブトラク
ティブ法とアディティブ法に分類できる。現在の主流の
製造法は、サブトラクティブ法（−船釣にはエツチイン
グ法と呼ばれる）であるが、工程で化学処理を行なうた
め公害対策や安全衛生対策等が必要である。BACKGROUND OF THE INVENTION Conventional printed wiring board manufacturing methods can be broadly classified into subtractive methods and additive methods. The current mainstream manufacturing method is the subtractive method (also called the etching method for boat fishing), but since chemical treatment is performed during the process, pollution control and safety and health measures are necessary.
一方、アディティブ法は鋼の無電解メツキで配線パター
ンを形成する方法と銀ペースト又は銅ペーストを印刷す
ることにより配線パターンを形成し、はんだ付けの必要
な箇所は、はんだ付は可能な厚膜用組成物を印刷すると
いう完全なドライプロセスで行なう方法も近年提案され
ている。（例えば、特開昭５８−１０８８６号公報）こ
のドライプロセスの製造法では湿式１程を必要としない
ため、設備が安価でかつ公害対策や安全衛生対策等も必
要とせず、そのうえ、実装ラインとの４貫ライン化も可
能となり、リードタイムの短縮もできるものである。On the other hand, in the additive method, wiring patterns are formed by electroless plating of steel and by printing silver paste or copper paste. A completely dry process of printing the composition has also been proposed in recent years. (For example, Japanese Unexamined Patent Publication No. 58-10886) This dry process manufacturing method does not require as much as the wet process, so the equipment is inexpensive and does not require pollution control or safety and health measures. This makes it possible to create a four-piece line, which also shortens lead time.
この完全なドライプロセスに必要なはんだ付は可能な厚
膜用組成物としては、銅粉の形状として樹枝状と粒状の
ものを用いるとしたもの（特開昭６３〜８１７０６号公
報）や金属キレート形成剤とはんだ付は促進剤を添加す
るとしたもの（特開昭６２−２３０８７０号公報）等が
提案されている。なお、第２図は上記製造法による回路
基板上にチップ部品をリフローはんだした場合の説明図
であり、第２図（Ａ）ははんだ付前、第２図（Ｂ）はは
んだ釘抜を示している。Thick film compositions that can be soldered, which is necessary for this completely dry process, include those that use dendritic and granular copper powder shapes (Japanese Patent Application Laid-Open No. 1981-81706) and metal chelate. It has been proposed to add a forming agent and an accelerator for soldering (Japanese Patent Application Laid-Open No. 62-230870). Furthermore, Figure 2 is an explanatory diagram of the case where chip components are reflow soldered onto a circuit board using the above manufacturing method, with Figure 2 (A) showing before soldering and Figure 2 (B) showing solder nail removal. There is.
発明が解決しようとする課題
しかしながら上記の従来の構成では、手はんだやデイツ
プはんだのようにはんだが充分供給される場合ははんだ
付は可能であるが、リフローはんだ付けで、はんだの濡
れ性の良い電極をもつチップ部品をはんだ付けする場合
は、第２図（Ｂ）に示すようにはんだがチップ部品の電
極部に集中し厚膜用組成物部には、はんだが付きにくか
ったり、また、はんだの濡れ性が充分ではなく、はんだ
が完全に付かない箇所が発生する可能性があった。Problems to be Solved by the Invention However, with the above-mentioned conventional configuration, soldering is possible if sufficient solder is supplied, such as with hand soldering or dip soldering, but reflow soldering requires good solder wettability. When soldering chip parts with electrodes, as shown in Figure 2 (B), the solder concentrates on the electrode parts of the chip parts, making it difficult for the solder to adhere to the thick film composition parts, or The wettability of the solder was not sufficient, and there was a possibility that there would be places where the solder did not completely adhere.
本発明は、上記従来の課題を解決するもので、はんだの
濡れ性が良く、高密度実装を行なうにおいて欠かすこと
ができないリフローはんだ付けを可能にすることができ
る厚膜用組成物を提供するものである。The present invention solves the above-mentioned conventional problems, and provides a thick film composition that has good solder wettability and can enable reflow soldering, which is indispensable for high-density mounting. It is.
課題を解決するための手段
この目的を達成するために本発明の厚膜用組成物は、平
均粒子径が４〜１０μｍで比表面積が（Ｋ＝１．０−１
．６．ｒ ：平均粒子径、ｄ：鋼の密度）
で表わされる粒状銅粉と、平均粒子径１〜４μ銅の粒状
銅粉と、平均粒子径５〜ＩＳμｍ、タップ密度３．０〜
５．０ｇ／ｃｃの樹枝状銅粉と、樹脂と、溶剤によって
厚膜用組成物を形成したものである。Means for Solving the Problems To achieve this object, the thick film composition of the present invention has an average particle diameter of 4 to 10 μm and a specific surface area of (K=1.0-1
．． 6. r: average particle size, d: density of steel), granular copper powder with an average particle size of 1 to 4 μm copper, average particle size of 5 to IS μm, and tap density of 3.0 to
A thick film composition was formed using 5.0 g/cc of dendritic copper powder, a resin, and a solvent.
作用
上記のように構成したことにより、焼付時およびはんだ
何時の銅粉の酸化を少な（し、はんだの濡れ性を向上し
、リフローはんだ付けを可能にしたものである。Function: The structure described above reduces oxidation of copper powder during baking and soldering, improves solder wettability, and enables reflow soldering.
実施例 まず、本発明の実施例の概要について説明する。Example First, an outline of an embodiment of the present invention will be explained.
厚膜用組成物のはんだの濡れ性は、焼付時及びはんだ付
は時に銅粉の表面の酸化の差に起因する。本発明は酸化
しにくい銅粉として比表面積の小さい銅粉について検討
した。なお、最も小さな比表面積を持つ形状は球であり
、その値は（１）式で与えられる。The solder wettability of thick film compositions is due to the difference in oxidation of the surface of the copper powder during baking and sometimes during soldering. In the present invention, copper powder with a small specific surface area was studied as a copper powder that is difficult to oxidize. Note that the shape with the smallest specific surface area is a sphere, and its value is given by equation (1).
球−個の表面積−４πｒ２ （ｍ２）球−個の体積−
４πｒ３ （ｍ３）
従って、比表面積は
４πｒ２÷（’πｒ３Ｘｄ）
ｒｘｄ （ｍ２／ｇ） ・・・・・・（１）
式ここで、ｒ；球の半径
ｄ；粒子の密度
通常の銅粉は、完全な球ではなく表面が凸凹しているた
め最終的に比表面積はＣ）式で表される。Surface area of spheres - 4πr2 (m2) Volume of spheres -
4πr3 (m3) Therefore, the specific surface area is 4πr2÷('πr3Xd) rxd (m2/g) (1)
Equation Here, r: Radius of sphere d: Density of particles Since ordinary copper powder is not a perfect sphere but has an uneven surface, the final specific surface area is expressed by the formula C).
比表面積＝ＫＸ−ニー （ｍ２／ｇ）ｒＸｄ’
・・・・・・（２）式
ここで、Ｋは１．０以上の値をもつ
本実施例２〜４は、Ｋ＝１．３４の粒状銅粉とに−４，
６１の粒状銅粉と樹枝状銅粉を混合したものであり、比
較例２はに＝１．６１の粒状銅粉と樹枝銅粉を混合した
ものである。両者のはんだ付は部の欠点数（はんだ付は
箇所８０個中のはんだの濡れ不良のある箇所の数）を比
較すると、明らかにに＝１．３４の粒状銅粉を混合した
ものの方が不良が少なく、はんだの濡れ性が大幅に向上
したことがわかる。なお、比表面積の測定は窒素吸着法
を用いた。Specific surface area=KX-knee (m2/g)rXd' (2) where K has a value of 1.0 or more. Granular copper powder Toni-4,
Comparative Example 2 is a mixture of granular copper powder of 1.61 and dendritic copper powder, and comparative example 2 is a mixture of granular copper powder of 1.61 and dendritic copper powder. Comparing the number of defects in the soldering parts (the number of places with poor solder wetting out of 80 soldering parts), it is clear that the one mixed with granular copper powder of = 1.34 is defective. It can be seen that the solder wettability was significantly improved. Note that the specific surface area was measured using a nitrogen adsorption method.
Ｋの値と銅粉の酸化のしにくさの関係を以下に示す。第
１図にイ平均粒子径５μｍ、に＝１．３４と口平均粒子
半５μｍ、に＝２．６０の２つの銅粉の熱重量分析（以
下ＴＧと呼ぶ）及び示差熱分析（以下ＤＴＡと呼ぶ）の
データを示すが、明らかにＫの値が小さいほうが酸化に
よる発熱も少なく、酸化による重量変化も少ないことが
確認された。オージェ電子分光分析では、イは３３Ａの
表面酸化膜であり、口は５００人の表面酸化膜であった
。The relationship between the value of K and the resistance to oxidation of copper powder is shown below. Figure 1 shows thermogravimetric analysis (hereinafter referred to as TG) and differential thermal analysis (hereinafter referred to as DTA) of two copper powders with an average particle size of 5 μm and 1.34 and an average particle size of half 5 μm and 2.60. It was confirmed that the smaller the value of K, the less heat generated by oxidation and the less weight change due to oxidation. Auger electron spectroscopy showed that A was a 33A surface oxide film, and the mouth was a 500 surface oxide film.
以上のように、ｋの値の小さい銅粉は酸化されに＜＜、
また酸化されても酸化膜が薄く、はんだ付は時のフラッ
クスにより容易に酸化膜が除去され、はんだの濡れ性が
良くなる。また、表層がはんだ付けされる時、厚膜用組
成物の皮膜内部粒子の酸化もゆっくり進むため、第一層
目がはんだに食われても第二層目の粒子が酸化されてお
らず、はんだの濡れ性が良いと考えられる。As mentioned above, copper powder with a small value of k is not easily oxidized.
Even when oxidized, the oxide film is thin, and during soldering, the oxide film is easily removed by flux, improving solder wettability. In addition, when the surface layer is soldered, the oxidation of the particles inside the film of the thick film composition progresses slowly, so even if the first layer is eaten by the solder, the particles in the second layer are not oxidized. It is thought that the solder wettability is good.
また、粒子径も４〜１０μｍと大きくすることによりは
んだ食われも少ないと考えられる。Further, it is thought that by increasing the particle size to 4 to 10 μm, there is less solder erosion.
銅粉の混合については、２つの効果目的をもっている。The mixing of copper powder has two purposes.
第一の混合効果は、低抵抗を出すことであり、そのため
最密充填となるように平均粒子径を５〜１５μ銅の樹枝
状銅粉と１〜１４銅の粒状銅粉を混合する。その混合比
は、９０／１０〜１０／９０が望ましい。樹枝状銅粉の
上限平均粒子径を越えるとスクリーン印刷性が悪くなる
。下限未満になると導電性が悪くなる。粒状銅粉の上限
平均粒子径を越えると樹枝状銅粉との第一の混合効果が
なくなり、下限未満になると耐酸化性が著しく悪くなる
ことが確認された。The first mixing effect is to produce low resistance, and therefore, dendritic copper powder with an average particle diameter of 5 to 15 μm copper and granular copper powder of 1 to 14 μm copper are mixed to achieve close packing. The mixing ratio is preferably 90/10 to 10/90. If the upper limit average particle diameter of the dendritic copper powder is exceeded, screen printability will deteriorate. If it is less than the lower limit, the conductivity will deteriorate. It was confirmed that when the upper limit average particle diameter of the granular copper powder was exceeded, the first mixing effect with the dendritic copper powder was lost, and when it was less than the lower limit, the oxidation resistance deteriorated significantly.
第二の混合効果は、はんだの濡れ性を良くすることであ
り、そのため平均粒子径４〜１０μｍ。The second mixing effect is to improve solder wettability, and therefore the average particle size is 4-10 μm.
比表面積が（２）式で表される粒状銅粉を混合する。Granular copper powder having a specific surface area expressed by formula (2) is mixed.
この粒状銅粉の上限平均粒子径を越えると、樹枝状銅粉
との第一の混合効果がなくなり抵抗値が高くなり、下限
未満になると酸化されやすくかつ、銅食われが起こり易
くなり、はんだの濡れ性が悪くなる。この粒状銅粉の混
合比は、全銅粉の１０％〜９ｏ％が望ましい。上限値を
越えると、樹枝状銅粉との第一の混合効果がなくなり抵
抗値が高くなる。下限未満になると第二の混合効果がな
くなり、はんだの濡れ性が低下することが確認された。If the upper limit average particle diameter of the granular copper powder is exceeded, the first mixing effect with the dendritic copper powder will be lost, and the resistance value will increase; if it is less than the lower limit, it will be easy to oxidize and copper corrosion will occur, and the solder wettability deteriorates. The mixing ratio of this granular copper powder is preferably 10% to 90% of the total copper powder. When the upper limit is exceeded, the first mixing effect with the dendritic copper powder disappears and the resistance value increases. It was confirmed that below the lower limit, the second mixing effect disappears and the wettability of the solder decreases.
以下本発明の実施例について説明する。Examples of the present invention will be described below.
下記に本実施例１に使用した材料を示す。The materials used in Example 1 are shown below.
（１）銅粉
１）粒状銅粉■
（日中貴金属工業■ＴＦＣ−５０００）平均粒子径
５μｍ
比表面積 ０．１８ｍ２／ｇ
Ｋ＝１．３４
２）粒状銅粉■
（三井金属鉱業（ｍ Ｓ −８６０６０３’）平均粒子
径 ３μｍ
比表面積 ０．３６ｍ２／＋；ｒＫ＝ １．６１
タップ密度 ４．３ｇ／ｃｃ
３）樹枝状銅粉■
（三井金属鉱業■ＭＦ−Ｄ２）
平均粒子径 ７μｍ
タップ密度 ４．４ｇ／ｃｃ
（２） 樹脂
レゾール型フェノ−樹脂
（郡栄化学工業（８）ＰＬ−２２１１）（３）溶剤
ブチルセロソルブ
上記の材料を第１表のように配合した後、ロールミルを
用いて混練した。その時、スクリーン印刷適性を出すた
め若干量の溶剤を添加した。その組成物をステンレス製
２００メツシユのスクリーンマスクを用いて２Ｉｌｌｌ
Ｉ口のパターンを、紙フエノール基板（住人ベークライ
ト■製ＰＬＣ−２１２０）上ニ印刷した後、１６０℃、
３Ｃ１間窒素雰囲気中で熱風循環乾燥機にて乾燥硬化さ
せた。(1) Copper powder 1) Granular copper powder■ (Nichinoki Kikinzoku Kogyo ■TFC-5000) Average particle size
5μm Specific surface area 0.18m2/g K=1.34 2) Granular copper powder■ (Mitsui Mining & Smelting Co., Ltd. (mS-860603') Average particle size 3μm Specific surface area 0.36m2/+; rK=1.61 Tap density 4 .3g/cc 3) Dendritic copper powder (Mitsui Kinzoku Kogyo MF-D2) Average particle size 7μm Tap density 4.4g/cc (2) Resin resol type pheno resin (Gunei Chemical Industry (8) PL- 2211) (3) Solvent Butyl Cellosolve The above materials were blended as shown in Table 1 and then kneaded using a roll mill. At that time, a small amount of solvent was added to make it suitable for screen printing. The composition was mixed using a 200-mesh stainless steel screen mask.
After printing the I-port pattern on a paper phenol substrate (PLC-2120 manufactured by Juju Bakelite ■), it was heated at 160°C.
It was dried and cured in a hot air circulating dryer in a nitrogen atmosphere for 3C1.
次にクリームはんだ（日本スベリア■ＳｎＳｎ６３ＲＡ
３Ａを０．３ｍ銅のメタルマスクを用いて印刷し、赤外
線リフロー炉にてはんだ付けを行なった。Next, cream solder (Nippon Suberia ■SnSn63RA
3A was printed using a 0.3 m copper metal mask, and soldering was performed in an infrared reflow oven.
以下に本実施例２〜４及び比較例１〜３に使用した材料
を示す。The materials used in Examples 2 to 4 and Comparative Examples 1 to 3 are shown below.
（１） 銅粉
１）銀被覆粒状銅粉■
（山中貴金属工業■ＴＦＣ−５０００）平均粒子径
５μｍ
比表面積 ０．１８ｍ２／ｇ
Ｋ＝１．３４
銀被覆量 ２重量％
２）銀被覆粒状銅粉■
（三井金属鉱業■Ｓ−８６０６０３）
平均粒子径 ３μｍ
比表面積 ０．３６ｍ２／ｇ
Ｋ＝１．６１
タップ密度 ４．３ｇ／ｃｃ
銀被覆量 ２Ｍ量％
３）銀被覆樹枝状銅粉■
（三井金属鉱業＠ＭＦ−Ｄ２）
平均粒子径 ７μｍ
タップ密度 ４．４ｇ／ｃｃ
銀被覆量 ２重量％
以下樹脂、溶剤及び配合、混練、印刷、乾燥硬化、はん
だ付けは、実施例１に同じ。但し、乾燥硬化は空気中に
て行なった。(1) Copper powder 1) Silver-coated granular copper powder ■ (Yamanaka Kikinzoku Kogyo ■ TFC-5000) Average particle size
5μm Specific surface area 0.18m2/g K=1.34 Silver coating amount 2% by weight 2) Silver-coated granular copper powder■ (Mitsui Mining & Co., Ltd. S-860603) Average particle size 3μm Specific surface area 0.36m2/g K=1 .61 Tap density 4.3g/cc Silver coating amount 2M amount% 3) Silver-coated dendritic copper powder■ (Mitsui Mining & Coating @MF-D2) Average particle diameter 7μm Tap density 4.4g/cc Silver coating amount 2% by weight The following resin, solvent, blending, kneading, printing, dry curing, and soldering are the same as in Example 1. However, dry curing was performed in air.
本実施例５は、銅粉にニッケル被覆した後銀被覆を施し
た以外は、実施例２〜４及び比較例１〜３に同じである
。This Example 5 is the same as Examples 2 to 4 and Comparative Examples 1 to 3 except that the copper powder was coated with nickel and then coated with silver.
本発明および比較例によるはんだ付けの結果を第１表に
示す。Table 1 shows the results of soldering according to the present invention and comparative examples.
以上のように実施例１〜５と比較例２を比較すると、粒
状銅粉■を添加することによりはんだ付は時の欠点数が
著しく向上したことが明白である。また、比較例１では
粒状銅粉■の添加量が少ないと添加効果が少なく、比較
例３では、粒状銅粉■のみであれば、抵抗値が高（なる
ことが明らかである。Comparing Examples 1 to 5 and Comparative Example 2 as described above, it is clear that the addition of granular copper powder (3) significantly improved the number of defects during soldering. Furthermore, in Comparative Example 1, it is clear that when the amount of granular copper powder (2) added is small, the effect of addition is small, and in Comparative Example 3, when only granular copper powder (2) is added, the resistance value is high.
なお、粒状銅粉■は平均粒子径４〜１０μｍでに＝１．
０〜１．６粒状銅粉■も平均粒子径１〜４μｍ、樹枝状
銅粉■も平均粒子径５〜１５μｍ、タップ密度３．０〜
５．０ｇ／ｃｃの間で各種実験を行なったが表１と同様
の結果が得られた。In addition, the granular copper powder (2) has an average particle diameter of 4 to 10 μm and has an average particle size of 1.
0-1.6 granular copper powder ■ also has an average particle diameter of 1-4 μm, dendritic copper powder ■ also has an average particle diameter of 5-15 μm, and tap density 3.0-
Various experiments were conducted between 5.0 g/cc and results similar to those shown in Table 1 were obtained.
また、実施例５のニッケル被覆に代えてクロム被覆を行
なったものも表１と同様の結果が得られた。Furthermore, results similar to those shown in Table 1 were also obtained when chromium coating was applied in place of the nickel coating in Example 5.
（以 下 余 白）
発明の効果
以上のように本発明は、上記実施例より明らかなように
、■平均粒子径４〜１０μｍ、比表面積が次式で表わさ
れる粒状銅粉
比表面積−ＫＸ７７丁
ここでに＝ １．０〜１．６
ｒ＝平均粒子径
ｄ＝鋼の密度
と■平均粒子径１〜４μ銅の粒状銅粉、■平均粒子径５
〜１５μｍ、タップ密度３．０〜５．０ｇ／ＣＣの樹枝
状銅粉とで構成される銅粉を用いることにより、半田の
濡れ性が向上し、リフローによるはんだ付けが可能な厚
膜用組成物を提供し得るものであり産業上極めて有用で
ある。(The following is a blank space) Effects of the Invention As is clear from the above examples, the present invention has the following advantages: ■ Particulate copper powder specific surface area -K Where = 1.0 to 1.6 r = average particle size d = density of steel ■ granular copper powder with average particle size of 1 to 4 μ copper, ■ average particle size 5
By using copper powder composed of dendritic copper powder of ~15 μm and tap density of 3.0 to 5.0 g/CC, the wettability of solder is improved, and the composition for thick films allows reflow soldering. It is extremely useful industrially.
第１図はＤＴＡおよびＴＧ曲線を示す図である。第２図
は厚膜用組成物上にチップ部属をリフローはんだ付けす
る前とはんだ付は後の状態を示す図である。
１・・・・・・チップ部品、２・・・・・・チップ部品
電極部、３・・・・・・クリームはんだ、４・・・・・
・厚膜用組成物、５・・・・・・基板、６・・・・・・
はんだ。FIG. 1 is a diagram showing DTA and TG curves. FIG. 2 is a diagram showing the state before and after reflow soldering of chip parts on the thick film composition. 1... Chip component, 2... Chip component electrode section, 3... Cream solder, 4...
・Thick film composition, 5...substrate, 6...
Solder.
Claims (4)
３／（ｒ×ｄ） （Ｋ＝１．０〜１．６，ｒ：平均粒子径，ｄ：銅の密度
） で表わされる粒状銅粉と、平均粒子径１〜４μｍの粒状
銅粉と、平均粒子径５〜１５μｍ，タップ密度３．０〜
５．０ｇ／ｃｃの樹枝状銅粉と、樹脂と、溶剤より成る
厚膜用組成物。(1) Average particle diameter is 4 to 10 μm and specific surface area is K×
3/(r×d) (K = 1.0 to 1.6, r: average particle diameter, d: density of copper) Granular copper powder represented by: and granular copper powder with an average particle diameter of 1 to 4 μm, Average particle diameter 5-15μm, tap density 3.0-
A thick film composition comprising 5.0 g/cc of dendritic copper powder, a resin, and a solvent.
の混合重量比が９０／１０〜１０／９０であって、平均
粒子径４〜１０μｍであって比表面積が Ｋ×３／（ｒ×ｄ） （Ｋ＝１．０〜１．６，ｒ：平均粒子径，ｄ：銅の密度
） である粒状銅粉と（樹枝状銅粉＋平均粒径１〜４の粒状
銅粉）の混合重量比が９０／１０〜１０／９０であるこ
とを特徴とする請求項１記載の厚膜用組成物。(2) The mixing weight ratio of granular copper powder with an average particle diameter of 1 to 4 μm and dendritic copper powder is 90/10 to 10/90, the average particle diameter is 4 to 10 μm, and the specific surface area is K×3/ (r×d) (K = 1.0 to 1.6, r: average particle diameter, d: density of copper) and (dendritic copper powder + granular copper powder with average particle diameter of 1 to 4) 2. The composition for thick films according to claim 1, wherein the weight ratio of the components is from 90/10 to 10/90.
方が銀で被覆されていることを特徴とする請求項１記載
の厚膜用組成物。(3) The thick film composition according to claim 1, wherein at least one of the dendritic copper powder and the granular copper powder is coated with silver.
方がニッケル又はクロムで被覆されたのち銀で被覆され
たものであることを特徴とする請求項１記載の厚膜用組
成物。(4) The thick film composition according to claim 1, wherein at least one of the dendritic copper powder and the granular copper powder is coated with nickel or chromium and then coated with silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14047489A JP2754733B2 (en) | 1989-06-01 | 1989-06-01 | Thick film composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14047489A JP2754733B2 (en) | 1989-06-01 | 1989-06-01 | Thick film composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH038209A true JPH038209A (en) | 1991-01-16 |
| JP2754733B2 JP2754733B2 (en) | 1998-05-20 |
Family
ID=15269444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14047489A Expired - Lifetime JP2754733B2 (en) | 1989-06-01 | 1989-06-01 | Thick film composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2754733B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03176906A (en) * | 1989-12-05 | 1991-07-31 | Furukawa Electric Co Ltd:The | Copper paste |
| JPH05151821A (en) * | 1991-11-28 | 1993-06-18 | Tokuyama Soda Co Ltd | Hardenable conductive composition |
| JPH10208547A (en) * | 1997-01-28 | 1998-08-07 | Sumitomo Bakelite Co Ltd | Conductive copper paste composition |
| JPH113619A (en) * | 1997-06-10 | 1999-01-06 | Sumitomo Bakelite Co Ltd | Conductive copper paste composition |
| WO2015194347A1 (en) * | 2014-06-16 | 2015-12-23 | 三井金属鉱業株式会社 | Copper powder, method for producing same and conductive composition comprising same |
| US11270809B2 (en) | 2017-03-16 | 2022-03-08 | Asahi Kasei Kabushiki Kaisha | Dispersing element, method for manufacturing structure with conductive pattern using the same, and structure with conductive pattern |
| US11328835B2 (en) | 2017-03-16 | 2022-05-10 | Asahi Kasei Kabushiki Kaisha | Dispersing element, method for manufacturing structure with conductive pattern using the same, and structure with conductive pattern |
-
1989
- 1989-06-01 JP JP14047489A patent/JP2754733B2/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03176906A (en) * | 1989-12-05 | 1991-07-31 | Furukawa Electric Co Ltd:The | Copper paste |
| JPH05151821A (en) * | 1991-11-28 | 1993-06-18 | Tokuyama Soda Co Ltd | Hardenable conductive composition |
| JPH10208547A (en) * | 1997-01-28 | 1998-08-07 | Sumitomo Bakelite Co Ltd | Conductive copper paste composition |
| JPH113619A (en) * | 1997-06-10 | 1999-01-06 | Sumitomo Bakelite Co Ltd | Conductive copper paste composition |
| WO2015194347A1 (en) * | 2014-06-16 | 2015-12-23 | 三井金属鉱業株式会社 | Copper powder, method for producing same and conductive composition comprising same |
| JP6001796B2 (en) * | 2014-06-16 | 2016-10-05 | 三井金属鉱業株式会社 | Copper powder, method for producing the same, and conductive composition containing the same |
| KR20170008744A (en) * | 2014-06-16 | 2017-01-24 | 미쓰이금속광업주식회사 | Copper powder, method for producing same and conductive composition comprising same |
| JPWO2015194347A1 (en) * | 2014-06-16 | 2017-04-20 | 三井金属鉱業株式会社 | Copper powder, method for producing the same, and conductive composition containing the same |
| US11270809B2 (en) | 2017-03-16 | 2022-03-08 | Asahi Kasei Kabushiki Kaisha | Dispersing element, method for manufacturing structure with conductive pattern using the same, and structure with conductive pattern |
| US11328835B2 (en) | 2017-03-16 | 2022-05-10 | Asahi Kasei Kabushiki Kaisha | Dispersing element, method for manufacturing structure with conductive pattern using the same, and structure with conductive pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2754733B2 (en) | 1998-05-20 |
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