JPH0380870B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an ion implantation apparatus used for manufacturing semiconductors or compound semiconductors or for modifying the surface of substances.

(Prior Art) A conventional ion implantation apparatus of this type has, for example, a first
As shown in the figure, a workpiece b such as a wafer is provided in an ion implantation chamber a by a platen f, a Faraday flag d is placed in the path of the ion beam c in front of the workpiece b, and a Faraday box c is placed on the side of the path. The current of the ion beam c is measured using a Faraday flag d, and after adjusting the beam scanning system to uniformly implant ions into the workpiece b, the flag b is moved to the side. The ion beam c is then irradiated onto the workpiece b, and when a predetermined dose is reached, the workpiece b is taken out from the ion implantation chamber a.

(Problems to be Solved by the Invention) In the conventional ion implantation apparatus as described above, the interior of the implantation chamber a is opened to the outside each time the workpiece B is taken out or put into the ion implantation chamber a, so the interior of the implantation chamber a is contaminated. Workpiece B itself is easily exposed to the atmosphere and contaminated, and if there is a difference between the temperature of the ion-implanted workpiece and the atmospheric temperature, the quality of the workpiece will deteriorate when Workpiece B is taken out of the ion implantation chamber A. There are disadvantages that cause changes in

It is an object of the present invention to eliminate these disadvantages and drawbacks of conventional ion implanters.

(Means for Solving the Problems) In the present invention, a wafer or other workpiece is placed in a vacuum ion implantation chamber, and the front surface of the workpiece is irradiated with an ion beam to perform ion implantation processing. A load lock chamber is provided on the side of the ion implantation chamber and communicates with the ion implantation chamber via a gate valve and can control vacuum pressure and atmospheric pressure, and inside the load lock chamber,
A work holder transport device that detachably holds a plate-shaped work holder with a work attached thereto and reciprocates it into an ion implantation chamber via the gate valve, and a radiation heating device that heats the work from the front of the work holder. , a workpiece cooling device that can be moved toward and away from the back of the work holder, and a lid that removably holds a lid that seals between the work and the work holder, and that is movable to bring the lid toward and away from the work holder. The above-mentioned problem is solved by providing a body moving device and further configuring the tip of the work holder conveying device to be able to be bent laterally for attachment and detachment of the work and the work holder.

(Function) A workpiece to be ion-implanted is selected from the evacuated load lock chamber through a gate valve into a vacuum ion-implantation chamber together with a workholder transport device, and the workpiece is transferred according to the ion implantation conditions. The ion beam is irradiated onto the workpiece while controlling the temperature of the workpiece. When a predetermined amount of ion implantation is completed, the gate valve is opened again, and the work holder transfer device returns the work together with the work holder from the ion implantation chamber to the load lock chamber. When the temperature of the processed workpiece is different from room temperature, it takes a long time to return the workpiece temperature to room temperature in a vacuum.In order to shorten this time, when the workpiece temperature is high, A workpiece cooling device comes in contact with the workpiece to forcibly cool the workpiece, and when the workpiece temperature is low, a radiant heating device heats the workpiece to return it to room temperature. Next, the lid moving device covers the work that has returned to room temperature with a lid to seal it between it and the work holder.
When the load lock chamber is returned to atmospheric pressure, the lid comes into airtight contact with the work holder due to the pressure difference within the lid, sealing the work in a vacuum state. The load lock chamber is opened and the work sealed between the work holder and the lid is taken out and transferred to the next process.
When taking out the work holder, the tip of the work holder transport device is bent to the side, so that the work holder can be easily removed from the work holder transport device and the next work holder can be attached.

(Example) An example of the present invention will be described with reference to the attached drawings.
In Fig. 2, reference numeral 1 denotes an ion implantation chamber that can be evacuated by a vacuum pump, 2 an ion beam introduced into the ion implantation chamber 1, and 3 an ion implantation chamber whose front surface is irradiated with the ion beam 2. Si applied
A workpiece 3 such as a wafer is shown, and the workpiece 3 is placed on the upper surface of a plate-shaped workholder 4 or is placed in close contact with it by mechanical means. The work holder 4
is detachably held in a work holder holding frame 5 in the ion implantation chamber 1. 6 is connected to the ion implantation chamber 1 through a gate valve 7 provided on the side of the ion implantation chamber 1.
The internal pressure is controlled to vacuum pressure and atmospheric pressure by evacuation by evacuation chamber 8 and introduction of air and other gases. In the load lock chamber 6, a work holder 4 on which a work 3 is placed or attached is mechanically or electrically held detachably, and the work holder holding frame 5 in the load lock chamber 6 and the ion implantation chamber 1 are connected to each other. a work holder transport device 9 that transfers and transfers the work holder between the work holder 4 and the radiant heating device 10 of an infrared heater or an infrared lamp that heats the work 3 from the front of the work holder 4;
A work cooling device 11 such as a cooling plate that comes into contact with and separates from the back surface of the work holder 4, and a dish-shaped lid 12 that seals the work 3 between the work holder 4 and the work holder 4 can be attached and detached by magnets or mechanical means. A reciprocating lid moving device 13 is provided to hold the lid 12 and move the lid 12 toward and away from the work holder 4 using a cylinder or the like. The work 3, work holder 4, and lid 12 are taken in and out by opening the door 14 of the load lock chamber 6, and the work holder 4 is attached to and removed from the tip of the work holder transfer device 9.
When the fixing pin 15 is removed, the tip 9a is bent laterally about the rotating shaft 16 as shown by the chain line, so that the work holder 4 can be attached and detached outside the load lock chamber 6.

Reference numeral 17 indicates a rod of the cooling device 11 which is inserted through the door 14 so as to be freely retractable, and reference numeral 18 is a vacuum sealing gasket provided at the front end periphery of the lid body 12.

To explain its operation, first, load lock chamber 6
The door 14 is opened, the tip 9a of the work holder transfer device 9 is bent sideways, the work holder 4 with the work 3 attached thereto is held there, and the lid moving device 13 is made to hold the lid 12. Work holder transport device 9
Return the tip to its original position, close the door 14, and evacuate the inside of the load lock chamber 6 through the vacuum exhaust hole 8. Next, the gate valve 7 is opened to advance the work holder transfer device 9 into the vacuum ion implantation chamber 1, and after transferring the work holder 4 and work 3 held therein to the work holder holding frame 5, the gate valve 7 is moved back. is closed, and the workpiece 3 is irradiated with the ion beam 2 inside the ion implantation chamber 1. When a predetermined amount of ion implantation is completed, the gate valve 7 is opened again, and the work holder transfer device 9 advances from the load lock chamber 6 to receive the work 3 and work holder 4, and these are transferred to the load lock chamber 6.
When returning to , the gate valve 7 is closed. The work 3 and work holder 4 are in a high or low temperature state depending on the ion implantation conditions, and it takes time in a vacuum to return them to room temperature. The work 3 can be brought to room temperature in a short time by heating the low temperature work 3 to room temperature or by bringing the work cooling device 11 into contact with the work holder 4 and cooling the high temperature work 3 to room temperature by heat conduction. When the work 3 returns to room temperature, the lid moving device 13 brings the lid 12 into contact with the work holder 4 so as to cover the work 3 as shown by the chain line, and the inside of the load lock chamber 6 is returned to atmospheric pressure. As a result, the lid body 12 has a vacuum pressure inside and an atmospheric pressure outside, so the workpiece 3 is pressed against the workpiece holder 4 so as to be sealed, and in this state, the door 14 of the load lock chamber 6 can be opened. If the work holder 4 is removed, the work 3 can be transferred to the next processing step without being exposed to the atmosphere, thereby preventing deterioration in the quality of the ion-implanted work.

If some inert gas is introduced into the chamber before returning the load lock chamber 6 to atmospheric pressure, the work 3 and the work holder 4 can be sealed with the lid 12 in an inert gas atmosphere. Also, load lock room 1
The workpiece 3 brought in for ion implantation is
The work holder 4 and the lid 12 may be sealed in advance at another location. In this case, when the work holder 4 is held by the work holder transfer device 9, the lid moving device 13 is moved forward to abut the lid 12 to hold it, and when the load lock chamber 6 is emptied, the lid is moved forward. 12 becomes balanced, the lid 12 that was in close contact with the work holder 4 is easily removed, and the lid moving device 1 holding the lid 12 is removed.
When the workpiece 3 is moved backward, the workpiece 3 and the workpiece holder 4 can be carried into the ion implantation chamber 1 as shown in the first diagram.

(Effects of the Invention) As described above, according to the present invention, a load lock chamber is provided on the side of the ion implantation chamber that communicates with the vacuum pressure and atmospheric pressure through a gate valve, and the workpiece is heated by radiation therein. Since the device is equipped with a workpiece cooling device and a lid moving device, it is possible to quickly return the ion-implanted workpiece to room temperature, improving processing capacity, and sealing the workpiece with the workpiece holder and lid. This makes it possible to transfer the ion-implanted workpiece to the next process without exposing it to the outside air, preventing changes in the quality of the workpiece, and bending the tip of the workpiece holder transfer device to the side. Since the structure is freely configured, the work holder can be easily attached and detached, and work efficiency is improved.

[Brief explanation of drawings]

Figure 1 is a cutaway side view of a conventional ion implanter.
FIG. 2 is a cutaway side view of an embodiment of the invention. 1...Ion implanter, 2...Ion beam,
3... Work, 4... Work holder, 6... Load lock chamber, 7... Gate valve, 9... Work holder transfer device, 10... Radiation heating device, 11... Work cooling device, 12... Lid body , 13... Lid moving device, 9a... Tip.

[Claims]

1. A method in which a gas is adsorbed on a substrate surface in a reaction chamber, the adsorbed molecules and/or the substrate surface are activated by radiation and/or heat, and a target substance is deposited on the substrate surface, which method includes: A photochemical thin film manufacturing method characterized by including steps b, c, d, and e. a. A step in which the reaction chamber is evacuated to degas molecules adsorbed on the substrate surface. b. A process of filling the reaction chamber with the gas in order to adsorb the gas after degassing the surface of the substrate; c) A process of maintaining the substrate at a predetermined temperature in order to control the amount of adsorption of the gas. d. A process of exhausting the gas remaining in the reaction chamber after the gas is adsorbed onto the surface of the substrate. e. A process of irradiating the temperature-controlled substrate with radiation of a selected wavelength and/or wavelength band emitted from a light source such as a lamp, laser, and/or infrared radiation plate to deposit a target substance on the surface of the substrate. 2. A method for producing a photochemical thin film, characterized in that the degassing in step a described in claim 1 brings the degree of vacuum in the reaction chamber to a pressure of 10-5 Torr or less. 3. A method for producing a photochemical thin film, characterized in that the degassing in step a described in claim 1 is carried out by heating the substrate to 100° C. or higher.

Claims (1)

An ion implantation device characterized by the following.