JPH0377463U - - Google Patents

Info

Publication number
JPH0377463U
JPH0377463U JP13913089U JP13913089U JPH0377463U JP H0377463 U JPH0377463 U JP H0377463U JP 13913089 U JP13913089 U JP 13913089U JP 13913089 U JP13913089 U JP 13913089U JP H0377463 U JPH0377463 U JP H0377463U
Authority
JP
Japan
Prior art keywords
conductivity type
region
impurity layer
base region
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13913089U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13913089U priority Critical patent/JPH0377463U/ja
Publication of JPH0377463U publication Critical patent/JPH0377463U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP13913089U 1989-11-30 1989-11-30 Pending JPH0377463U (US08124630-20120228-C00102.png)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13913089U JPH0377463U (US08124630-20120228-C00102.png) 1989-11-30 1989-11-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13913089U JPH0377463U (US08124630-20120228-C00102.png) 1989-11-30 1989-11-30

Publications (1)

Publication Number Publication Date
JPH0377463U true JPH0377463U (US08124630-20120228-C00102.png) 1991-08-05

Family

ID=31686190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13913089U Pending JPH0377463U (US08124630-20120228-C00102.png) 1989-11-30 1989-11-30

Country Status (1)

Country Link
JP (1) JPH0377463U (US08124630-20120228-C00102.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7217612B2 (en) 2000-12-07 2007-05-15 Sanyo Electric Co., Ltd. Manufacturing method for a semiconductor device with reduced local current
JP2007335881A (ja) * 1992-09-21 2007-12-27 Siliconix Inc BiCDMOS構造及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007335881A (ja) * 1992-09-21 2007-12-27 Siliconix Inc BiCDMOS構造及びその製造方法
US7217612B2 (en) 2000-12-07 2007-05-15 Sanyo Electric Co., Ltd. Manufacturing method for a semiconductor device with reduced local current

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