JPH0376464A - Close contact type image sensor - Google Patents

Close contact type image sensor

Info

Publication number
JPH0376464A
JPH0376464A JP1213176A JP21317689A JPH0376464A JP H0376464 A JPH0376464 A JP H0376464A JP 1213176 A JP1213176 A JP 1213176A JP 21317689 A JP21317689 A JP 21317689A JP H0376464 A JPH0376464 A JP H0376464A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
correction
image sensor
output
operational amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1213176A
Other languages
Japanese (ja)
Inventor
Masayoshi Shiraishi
政良 白石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP1213176A priority Critical patent/JPH0376464A/en
Publication of JPH0376464A publication Critical patent/JPH0376464A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate the need for a correction circuit on the outside of a sensor by providing a correction means uniformizing nearly a photoelectric conversion characteristic and obtaining a desired output value and a correction coefficient storage means storing a correction coefficient in matching with each photoelectric conversion element and inputting the coefficient to the correction means. CONSTITUTION:A scanning circuit 2 uses a MOS transistor(TR) 14 to switch photo diodes 15 and inputs the diode to an operational amplifier 13 with sequential changeover. The amplification factor of the operational amplifier 13 is set to a predetermined value by using output data ma, mb, mc, md of a ROM 17 synchronously with a scanning circuit 2 with a synchronizing signal i to correct the dispersion of the photoelectric conversion characteristic of the photodiodes 15. Thus, the output of the operational amplifier 13 is not dependent on the dispersion of the photoelectric conversion characteristic of the photo diodes and amplified to a desired value.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 原稿情報を光学的に読取るD!!着型イメージセンサに
関するものである。
[Detailed Description of the Invention] [Industrial Application Field] D! that optically reads document information. ! The present invention relates to a wearable image sensor.

〔発明の概要〕[Summary of the invention]

本発明は複数の充電変換素子と、前記光電変換素子を順
次切換えて動作させる走査回路を有する密着型イメージ
センサにおいて、前記光電変換素子の光電変換特性のバ
ラツキを補正し、所望の値に増幅する補正手段と、前記
補正手段の補正係数を記憶する補正係数記憶手段を密着
型イメージセンサ基板上に搭載することにより、光電変
換特性のバラツキをほぼ均一に補正し、且つ、所望の値
に増幅されたセンサ出力を得ることができる。
The present invention provides a contact image sensor having a plurality of charging conversion elements and a scanning circuit that sequentially switches and operates the photoelectric conversion elements, and corrects variations in the photoelectric conversion characteristics of the photoelectric conversion elements and amplifies them to a desired value. By mounting the correction means and the correction coefficient storage means for storing the correction coefficient of the correction means on the contact type image sensor substrate, it is possible to almost uniformly correct variations in the photoelectric conversion characteristics and to amplify the photoelectric conversion characteristics to a desired value. sensor output can be obtained.

これにより、光電変換特性のバラツキに起因する読取り
原稿の明度の不均一や色再現での不均一などの悪影響を
抑え、且つセンサ出力の後処理が容易で、ノイズに強い
出力が得られる。
This suppresses adverse effects such as non-uniform brightness of the read document and non-uniform color reproduction caused by variations in photoelectric conversion characteristics, facilitates post-processing of sensor output, and provides an output that is resistant to noise.

〔従来の技術〕[Conventional technology]

従来の技術では、光電変換素子における光電変換特性の
バラツキはセンサ基板上では補正をせず、第2図のよう
な回路をセンサ外部に設け、基準となるデータを用いて
、光電変換特性をほぼ均一に補正している。
In conventional technology, variations in the photoelectric conversion characteristics of the photoelectric conversion elements are not corrected on the sensor board, but a circuit like the one shown in Figure 2 is provided outside the sensor, and standard data is used to approximately correct the photoelectric conversion characteristics. Corrected uniformly.

第2図について説明する。FIG. 2 will be explained.

イメージセンサ11から出力される微弱なセンサ出力j
を増幅器5で増幅し、増幅したセンサ出力kをS/H(
サンプル・ホールド)回路6でサンプリングし、A/D
変換回路7の入力とする。A/D変換回路7はアナログ
信号をデジタル信号に変換する公知のものである。また
、増幅器5はトランジスタやオペアンプ等から成る公知
のもので、S/H回路6についても公知のもので良い。
Weak sensor output j output from the image sensor 11
is amplified by the amplifier 5, and the amplified sensor output k is expressed as S/H (
sample/hold) sampled by circuit 6, A/D
It is input to the conversion circuit 7. The A/D conversion circuit 7 is a known one that converts an analog signal into a digital signal. Further, the amplifier 5 may be of a known type consisting of a transistor, an operational amplifier, etc., and the S/H circuit 6 may also be of a known type.

A/D変換回路7の出力信号は、基準とするデータeを
読取った場合には、補正係数テーブル8で逆数に変換さ
れ、補正用データとしてラインメモリ9に入力される。
When the output signal of the A/D conversion circuit 7 reads the reference data e, it is converted into a reciprocal number by the correction coefficient table 8 and inputted to the line memory 9 as correction data.

次に、原稿を読取った場合は、A/D変換回路7で、デ
ジタル信号に変換された後は、デジタル乗算器10に入
力される。この時、ラインメモリ9に記憶されている補
正用データgを、画像データfに乗算し、バラツキを補
正した出力信号りを得る。
Next, when the original is read, the signal is converted into a digital signal by the A/D conversion circuit 7 and then input to the digital multiplier 10 . At this time, the image data f is multiplied by the correction data g stored in the line memory 9 to obtain an output signal with variations corrected.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上記のような光電変換特性のバラツキを補正する方法で
は、密着型イメージセンサは光電変換素子の出力を補正
や増幅をせずに出力するので、微弱でバラツキのあるセ
ンサ出力となる。また、そのため外部に第2図に示すよ
うな複雑な回路を必要とする。
In the method of correcting variations in photoelectric conversion characteristics as described above, the contact image sensor outputs the output of the photoelectric conversion element without correction or amplification, resulting in a weak and uneven sensor output. Moreover, for this reason, a complicated circuit as shown in FIG. 2 is required externally.

それに、第2図に示すようにセンサ出力jは微弱で、バ
ラツキを含む信号のまま、増1Fg器5に入力されるが
、イメージセンサ11は$IIm信号lとして、デジタ
ル18号を用いているため、センサ出力jには輻射ノイ
ズ等のノイズ源が近傍にあることになる。よって、微弱
なセンサ出力jのS/Nを確保することは難しい。
In addition, as shown in FIG. 2, the sensor output j is weak and is input to the amplifier 1Fg unit 5 as a signal containing variations, but the image sensor 11 uses digital No. 18 as the $IIm signal l. Therefore, a noise source such as radiation noise is present in the vicinity of the sensor output j. Therefore, it is difficult to ensure the S/N ratio of the weak sensor output j.

〔!I8を解決するための手段〕 上記のLIBを解決するために、本発明においては、従
来の密着型イメージセンサ上に充電変換素子の光電変換
特性がほぼ均一で、所望の出力値となるようにする補正
手段と、個々の光電変換素子に合った補正係数を記憶し
、補正手段に入力する補正係数記憶手段を設けた。
[! Means for Solving I8] In order to solve the above-mentioned LIB, in the present invention, the photoelectric conversion characteristics of the charging conversion element on the conventional contact type image sensor are almost uniform and a desired output value is obtained. and a correction coefficient storage means for storing correction coefficients suitable for each photoelectric conversion element and inputting them to the correction means.

〔作用〕[Effect]

上記のような構成によれば、密着型イメージセンサ基板
内で、光電変換素子の光電変換特性がバラツキを補正し
、所望の出力値に増幅できる。
According to the above configuration, variations in the photoelectric conversion characteristics of the photoelectric conversion elements can be corrected and amplified to a desired output value within the contact type image sensor substrate.

〔実施例〕〔Example〕

以下に本発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.

第1図は本発明の実施例の密着型イメージセンサの一実
施例を示す構成ブロック図である。第1図において、光
電変換素子1はフォトトランジスタ、フォトダイオード
等から成る公知のもので、画像データを光から電気信号
に変換する。走査回路2はカウンタやシフトレジスタ等
から成る公知のもので、外部からの制御信号により、光
電変換lを順次切り換えて動作させ、光電変換素子1の
出力を補正手段3へ導<、補正手段3はトランジスタや
オペアンプ等から戒り、補正係数記憶手段4のデータに
より、各光電変換素子1の光電変換特性のバラツキを補
正し、はぼ均一な出力を得ることができる。補正係数記
憶手段4はROM、RAM、  レジスタ等の記憶素子
から成り、予め定められた補正係数を記憶している。
FIG. 1 is a configuration block diagram showing an embodiment of a contact type image sensor according to an embodiment of the present invention. In FIG. 1, a photoelectric conversion element 1 is a known type including a phototransistor, a photodiode, etc., and converts image data from light into an electrical signal. The scanning circuit 2 is a known type consisting of a counter, a shift register, etc., and operates by sequentially switching the photoelectric conversion elements 1 in accordance with an external control signal, and guides the output of the photoelectric conversion element 1 to the correction means 3. By using the data in the correction coefficient storage means 4, it is possible to correct variations in the photoelectric conversion characteristics of each photoelectric conversion element 1 and obtain a more or less uniform output. The correction coefficient storage means 4 consists of storage elements such as ROM, RAM, and registers, and stores predetermined correction coefficients.

第3図は本発明における一実施例の構成図である。FIG. 3 is a configuration diagram of an embodiment of the present invention.

第3図の動作について説明する。走査回路2はMO3型
トランジスタ14でフォトダイオード15をスイッチン
グし、順次切り換えてオペアンプ13に入力する。オペ
アンプ13は同期信号iによって走査回路2と同期され
たROM17の出力データma。
The operation shown in FIG. 3 will be explained. The scanning circuit 2 switches the photodiode 15 using the MO3 type transistor 14, and sequentially switches the photodiode 15 and inputs it to the operational amplifier 13. The operational amplifier 13 receives output data ma from the ROM 17, which is synchronized with the scanning circuit 2 by the synchronization signal i.

mb、me、mdによって予め定められた値に増幅率が
設定され、フォトダイオード15の光電変換特性のバラ
ツキを補正する。ここで、補正手段3はオペアンプ13
と抵抗18.19から成る反転増幅器及びMO3型トラ
ンジスタ16で構成される回路に相当し、補正係数記憶
手段4はROM17に相当する。
The amplification factor is set to a predetermined value by mb, me, and md, and variations in the photoelectric conversion characteristics of the photodiode 15 are corrected. Here, the correction means 3 is the operational amplifier 13
The correction coefficient storage means 4 corresponds to the ROM 17.

これにより、オペアンプ13の出力はフォトダイオード
の光電変換特性のバラツキに依存せず、且つ、所望の値
に増幅された出力となる。
As a result, the output of the operational amplifier 13 does not depend on variations in the photoelectric conversion characteristics of the photodiodes, and is amplified to a desired value.

また、第3図の実施例においてROM17をRAMに置
換することにより、補正係数の書き換えが可能となる。
Furthermore, by replacing the ROM 17 with RAM in the embodiment shown in FIG. 3, it becomes possible to rewrite the correction coefficients.

ただし、この場合前記RAMはデー夕を書き込む際に用
いるデータバスが必要である。
However, in this case, the RAM requires a data bus to be used when writing data.

前記データバスを密着型イメージセンサ外部に出すこと
により、外部から任意の補正データを書き込むことが可
能となる。
By taking the data bus outside the contact type image sensor, it becomes possible to write arbitrary correction data from the outside.

本発明は補正手段、及び補正記憶手段を光電変換素子と
同一のチンプ上に搭載することを特徴とする密着型イメ
ージセンサである。
The present invention is a contact image sensor characterized in that a correction means and a correction storage means are mounted on the same chip as a photoelectric conversion element.

第4図は第3図の実施例の配置図である。光電変換素子
1はフォトダイオード15に、補正手段3はオペアンプ
13.抵抗18と19.MO3型トランジスタ16に、
補正係数記憶手段4はROM17にそれぞれ相当し、第
4図に示されるように配置される。
FIG. 4 is a layout diagram of the embodiment of FIG. 3. The photoelectric conversion element 1 is a photodiode 15, and the correction means 3 is an operational amplifier 13. Resistors 18 and 19. MO3 type transistor 16,
The correction coefficient storage means 4 respectively correspond to the ROM 17 and are arranged as shown in FIG.

C発明の効果〕 以上のように本発明によれば、光電変換素子の光電変換
特性のバラツキを密着型イメージセンサ基板内で補正で
きるので、センサ外部に補正回路が不要となり、回路の
筒車化が図れる。また所望の出力値まで増幅でき、且つ
、密着型イメージセンサの出力インピーダンスは出力段
のオペアンプの出力インピーダンスとなり、非常に小さ
くなる。
C Effects of the Invention As described above, according to the present invention, variations in the photoelectric conversion characteristics of photoelectric conversion elements can be corrected within the contact type image sensor substrate, eliminating the need for a correction circuit outside the sensor and reducing the need for a circuit wheel. can be achieved. Furthermore, the output impedance of the contact type image sensor becomes the output impedance of the operational amplifier in the output stage, and becomes very small.

よって、ノイズの影響を受けにくい状態で、外部回路と
接続でき、S/N向上につながる。
Therefore, it can be connected to an external circuit in a state where it is not easily affected by noise, leading to an improvement in S/N.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の密着型イメージセンサの一実施例を示
す構成ブロック図、第2図は従来の光電変換特性バラツ
キ補正回路の一例を示すブロック図、第3図は本発明に
おける一実施例の構成国、第4図は第3図の実施例の配
置図である。 ・・光電変換素子 ・・補正手段 ・・増幅器 ・・A/D変換 ・・ラインメモリ 走査回路 補正係数記憶手段 S / H回路 補正係テーブル デジタル乗算器 以上
FIG. 1 is a configuration block diagram showing an embodiment of a contact type image sensor of the present invention, FIG. 2 is a block diagram showing an example of a conventional photoelectric conversion characteristic variation correction circuit, and FIG. 3 is an embodiment of the present invention. FIG. 4 is a layout diagram of the embodiment of FIG. 3.・Photoelectric conversion element ・Correction means ・Amplifier ・A/D conversion ・Line memory Scanning circuit Correction coefficient storage means S/H circuit correction table Digital multiplier or higher

Claims (1)

【特許請求の範囲】 複数の光電変換素子と、前記光電変換素子を順次切換え
て動作させる走査回路を有する密着型イメージセンサに
おいて、 前記光電変換素子の光電変換特性のバラツキを補正し、
所望の値に増幅する補正手段と、前記補正手段の補正係
数を記憶する補正係数記憶手段を密着型イメージセンサ
基板上に搭載したことを特徴とする密着型イメージセン
サ。
[Scope of Claims] A contact image sensor having a plurality of photoelectric conversion elements and a scanning circuit that sequentially switches and operates the photoelectric conversion elements, comprising: correcting variations in photoelectric conversion characteristics of the photoelectric conversion elements;
A contact type image sensor, characterized in that a correction means for amplifying to a desired value and a correction coefficient storage means for storing a correction coefficient of the correction means are mounted on a contact type image sensor substrate.
JP1213176A 1989-08-18 1989-08-18 Close contact type image sensor Pending JPH0376464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1213176A JPH0376464A (en) 1989-08-18 1989-08-18 Close contact type image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1213176A JPH0376464A (en) 1989-08-18 1989-08-18 Close contact type image sensor

Publications (1)

Publication Number Publication Date
JPH0376464A true JPH0376464A (en) 1991-04-02

Family

ID=16634804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1213176A Pending JPH0376464A (en) 1989-08-18 1989-08-18 Close contact type image sensor

Country Status (1)

Country Link
JP (1) JPH0376464A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5556048A (en) * 1993-09-14 1996-09-17 Daiwa Seiko, Inc. Backlash preventive device for use in a dual bearing type reel for fishing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5556048A (en) * 1993-09-14 1996-09-17 Daiwa Seiko, Inc. Backlash preventive device for use in a dual bearing type reel for fishing

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