JPH0376122A - Device implanting device - Google Patents

Abstract

PURPOSE:To make it possible to detect the end of machining in a cutting work and the machining position with high precision and with high reliability by a method wherein when the cutting work of a specified device is performed with a device for implantation use, a machining control to utilize a signal from a machining part or at least one side of machining stages located at the rear of the machining part and transfer to use the static chuck of the device for implantation use are adopted. CONSTITUTION:An FIB(a focused ion beam) 1 is irradiated on an arm 21 and a device is cut off from a carrier frame 6. At this time, +10V, 0V and -10V are respectively given to the respective potentials Vd, Vs and Vm of the device for implantation use, a sample and a metal net 12 and emission secondary electrons from the arm (having a potential identical with that of the device for implantation use) are made to synchro nize with the deflection control of the FBI 1 using a detection signal of the secondary electrons only, whereby the secondary electrons are displayed on a CRT of a computer as an SIM image. Thereby, a remaining machining part is made clear and by applying a feedback to the deflection control so as to irradiate the FIB only on the region of the remaining machining part, a place to be machined can be machined correctly and neither too much nor too less.

Description

[Detailed description of the invention] [Conventional technology]

The prior art is described in Japanese Patent Publication No. 63-25660. FIG. 5(a) is a diagram showing the configuration of the prior art device, in which the ion beam emitted from the gallium liquid metal ion source 100 is deflected by a voltage signal applied to the electrostatic deflector 105, and then the objective electrostatic lens 106 is deflected. is focused onto the sample 200 by. When the secondary electrons generated from the sample 200 are detected in synchronization with the beam scanning as a brightness signal by the detector 107 and displayed on the display, a scanning ion microscope (hereinafter abbreviated as SIM) image is obtained, and the sample 200 is detected with a resolution similar to the beam diameter. The fine structure of can be observed. When a sample material is irradiated with a large amount of ion beam, the sample material can be etched by a sputtering phenomenon. Furthermore, when ion beam irradiation is performed in a metal gas atmosphere, the metal in the gas is deposited to form a conductive film. Prior art techniques combine these elements to modify wiring patterns within integrated circuits. In FIG. 5(b), a portion of the wiring pattern 10 is locally irradiated with an ion beam to form a wiring cutting portion 30 and electrically cutting the pattern. At this time, the above SIM is used for positioning the beam irradiation part, etc.
Statue available. In FIG. 5(C), a conductive film 7 is formed by locally irradiating an ion beam in a gas atmosphere, and it is possible to electrically connect the patterns.

[Problem to be solved by the invention]

According to the above-mentioned conventional technology, wiring patterns can be cut and connected with fineness comparable to the diameter of a beam, and wiring can be changed or repaired. However, the electrical resistance of the formed conductive film is still high1, and repair of passive elements and active elements other than the conductive film is not considered. The problem of the present invention is to cut a specific device from a single or multiple implantation devices manufactured in advance in device implantation that enables repair of all passive elements and active elements without limiting the repair to conductive films. The aim is to accurately and reliably determine the end point and position of the process, and to transport the implantable device with high operability.

[Means to solve the problem]

The above-mentioned problems include processing control using signals from at least one of the processing section or the processing stage located behind it when cutting a specific device from a single or multiple implanted devices that have been manufactured in advance; This is accomplished by incorporating electrostatic chuck-based delivery of the implantable device.

【Example】

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a basic configuration diagram of the FIB device used in the example. An ion beam emitted from a liquid metal ion source 100 is focused onto a sample 200 by a condenser lens 101 and an objective lens 106. Aperture 10 between the lenses
2. Aligner Stigma 103. Plunker 104
．． A deflector 105 is arranged. The sample 200 is fixed on a stage 111 that is movable in two axes (X, Y) directions. Gas generated from the gas source 110 is guided to the vicinity of the FIB irradiation section by the gas nozzle 108. Secondary electrons from the implantation device or sample on the processing stage are detected by the secondary electron detector 107 through the energy filter metal mesh 112 by FIB irradiation, and are transferred to the SIM on the CRT of the computer by synchronizing with deflection control. displayed as an image. A three-axis (x, y, z) manipulator 109 is the most distinctive part of this apparatus and serves to transport the device to be implanted to the desired location on the sample. Beam deflection, signal detection, manipulators, stage, gas, etc. are controlled by the computer via the system bus. The implantation device, sample, and metal mesh 112 include a second
As shown in the figure, independent potentials are applied to each by the processing control section. Thereby, the secondary electrons detected by the secondary electron detector 107 can be limited to those from the implantation device or the sample, or from both. FIG. 3 is an embodiment that best represents the present invention, and is an attempt to implant a field effect transistor (hereinafter abbreviated as FET). FIG. 3(d) shows a part of the circuit configuration of the sample, in which four FETs constitute a three-man power NOR. As a result of testing this device, it was found that the FET 20c was defective, so this FET was electrically disconnected and a good one was replaced. This procedure will be described below. Figure 3(a) shows the state of sputtering processing by FIBI irradiation, and for reference, the top view is shown in Figure 3(e).
). First, in order to electrically disconnect the defective FET, the wiring pattern 10 connected to the FEJ is cut using the wiring cutting hole 3. This is hole machining that penetrates the Ifi edge layer line pattern on the sample surface. Next, a contact hole 2 is opened on the premise of electrical connection between the wiring pattern 10 and the implanted device. this is,
This is sputtering processing of only the sample surface layer. In addition, a pit hole 4 is made in order to alleviate the displacement of the transplant device 5. This is shallow sputtering processing of the insulating film on the sample surface. FIG. 3(b) shows a method for transporting the implantation device 5 into the pit hole 4. The implantation device is an F having the element structure shown in FIG. 3(f).
In the ET method, 1. After manufacturing the diffusion layer and electrodes using a normal process, the outer side of the element isolation layer is processed to be sloped, and the back surface is etched to form a thin film. The reason why the outer periphery of the device is sloped is to prevent breakage during wiring formation later. The implantation device 5 is fixed to the device carrier frame 6 via a thin arm 21. This frame is connected to a three-axis manipulator 109 in FIG. Therefore, by activating the manipulator and the stage, the implantation device can be transported to a desired location (here, the pit hole 4). After transportation, the arm 21 is irradiated with FIBI and the device is separated from the carrier frame 6. At this time, the potentials of the implantation device, the sample, and the metal mesh 112 are V a
= V s −V −IC1+10V, OV. - IOV and synchronized with the FIBI deflection control using the detection signal of only the emitted secondary electrons from the arm (same potential as the implanted device), the computer's CR
It is displayed as a SIM image on T. This makes the remaining machining area clear, and only that area has F.
By applying feedback to the deflection control to perform IB irradiation, the area to be processed could be processed accurately and without excess or deficiency. FIG. 3(c) shows how a conductive deposit film 7 is formed by FIB 1 irradiation in an atmosphere of a metal gas 9, and electrical connection is made between the wiring pattern 10 and the implanted device through the contact hole 2. Repairs have been completed. The above is the device porting procedure. FIG. 4(a) shows a panoramic view of the device carrier frame and the connection portion with the manipulator. The method using a carrier frame uses a chuck 40 that connects the frame and the manipulator even if the device is minute.
Since it may be large, fine devices can be transported with a simple configuration. Furthermore, by opening and moving the manipulator using a piezoelectric element or the like, positioning at a submicron level is possible. Figure 4(b) shows a part of the device carrier, with a resistor attached to the frame through a thin arm. Passive components such as capacitors, insulating films, conductive patterns, FE
T, gate, flip-flop, decoder. It is equipped with active components such as a multiplexer, CPU, and memory. These parts are used selectively depending on the purpose. FIG. 4(C) is an enlarged view of the device carrier frame 6 and the arm 21. The arm has a constriction, and its width is wide on the frame 6 side and narrow on the device 41 side. This increases the frame's retention on the device,
While maintaining high impact resistance, we were able to shorten the length of the beam cutting section and shorten the processing time required for transplantation. In addition, in this example, the sputtering phenomenon of the FIB was used for processing and cutting, but especially if the device itself is large, it is also possible to mechanically break it off by pressing it with a holding jig or picking it with tweezers. It is. In this case, it is preferable that the arm supporting the device on the frame has a locally constricted shape as shown in FIG. 4(c). For example, after the device 41 is transported to a desired transplantation site, the device portion is fixed with a holding jig from above and the frame 6 is pulled up, so that the device 41 and the frame 6 can be separated at the constriction of the arm with good reproducibility. In the above embodiment, secondary electrons are used as processing monitor signals, but similar effects can be obtained by using absorbed current, secondary ions, or light. When absorption current is used, the charged particle detector 107 is not required, and there is an advantage that the spatial arrangement of gas nozzles, manipulators, etc. near the beam irradiation part becomes easier. When using secondary ions, the charged particle detector 107 is a small mass spectrometer, and although the signal-to-noise ratio is generally poorer than in the case of secondary electrons, it monitors the compositional element ions of the sample or the arm itself. Therefore, it is effective when the processed parts of the sample and arm are made of structures with different elemental compositions. When using light, the charged particle detector 107 is a photodetector and detects the surface potential (
(charge-up, etc.) can be removed. Also, by placing a filter in front of the photodetector,
It is also possible to detect only light in a specific wavelength range that corresponds to a specific element. Furthermore, similar effects can be obtained by combining these signals (secondary electrons, absorbed current, secondary ions, and light) as processing monitor signals. In the above embodiments, an ion beam was used as the focused beam, but similar effects can be obtained using an electron beam or a laser beam. Position and shape of sample and implantation device using electron beam 11!
When used for inspection, it has the advantage of causing less radiation damage compared to ion beams. Further, when processing is performed using an electron beam, an etching gas such as chlorine gas is introduced during sputtering, and a metal gas such as w(c○)6 is introduced during deposition. When an electron beam is used as a processing beam, secondary electrons or reflected electrons are used as a processing monitor signal. Furthermore, when a laser beam is used as a processing beam, it cannot be expected to have the same focusing characteristics as ion or electron beams, but since it can be implanted in the atmosphere, it can be implanted into biological systems, for example. Furthermore, an optical microscope can be used to observe the position and shape of the sample and device. In this case, reflected light is used as a processing monitor signal. As an example of a method for transporting a transplanted device to a predetermined position on a sample (implanted device), in FIG. 3(b), the device carrier frame was transported by a manipulator, and the desired implanted device was cut off there using a focused beam. . FIG. 6 shows an embodiment of another transportation method, in which the implanted device is cut in advance at a different location and transported using an electrostatic microchuck for implantation. The arm 301 of the microchuck is made of an insulator, and is charged by irradiating the tip of the arm with an FIB or a charged focused beam 1 of electrons. By bringing this close to the already separated transplant device 41, the transplant device can be attracted by electrostatic force. On the other hand, the adsorbed implantation device can be dropped by bringing the implantation device into contact with a ground potential part, for example a sample, to dissipate the charge. Of course, it is also possible to neutralize the charging by irradiating a focused beam with a polarity opposite to that of the charged focused beam. The arm body is opened and moved using a piezoelectric element, etc., and positioning at the submicron level is possible. Moving and transporting a transplanted device using an electrostatic microchuck is simple in principle and has the advantage of high operability. In particular, as the implantation device becomes smaller and thinner, the electrostatic adsorption force becomes stronger compared to the weight of the device, making it suitable for delicate implantation work.

【Effect of the invention】

According to the present invention, prefabricated high-quality implantation devices, regardless of whether they are passive elements, active elements, or micromechanical parts, can be cut with high precision and reliability from the frame to which they are fixed. It also has the advantage of being highly operable and allowing the transplantation device to be transported.

[Brief explanation of drawings]

FIG. 1 is a schematic configuration diagram of a device implantation apparatus using an ion beam according to the present invention, and FIG. 2 is an explanatory diagram of potential control applied to the implantation device, sample, and metal mesh according to an embodiment of the present invention. FIG. 3 is an explanatory diagram of the device implantation process according to an embodiment of the present invention, FIG. 4 is a top view showing the carrier frame carrying the implantation device and the connection part with the manipulator, and FIG. 5 is a pattern according to the prior art. A configuration diagram of a modification device, a top view of a modified device, and FIG. 6 are explanatory diagrams of the operation of an electrostatic microchuck for transplantation that adsorbs and conveys a transplantation device according to an embodiment of the present invention. Explanation of symbols 1... Focused ion beam, 2... Contact hole, 3... Wiring cutting hole, 4... Pit hole, 5...
- Transplant device, 6... Device carrier frame, 7... Conductive deposit film, 8... Nozzle, 9... Metal gas, 10... Wiring pattern, 21... Arm,
30...Wiring cutting part, 40...Chuck, 41...
・Insulating film, 42...Conductive pattern, 50...Redeposition film, 112...Metal net $1 field ・L body surface, genus 2 (to) 6... TeN,,Iku Hoshiiri i'7L-to 4th-II! J Dito... t81 Sagun P 11. 4 prostitute-'no/ Rod I-figure (ko) Kayaro figure

Claims (1)

[Claims] 1. A means for transporting a prefabricated device to a desired location on a sample, a means for observing the sample and device using a focused beam, and at least an electrical or mechanical connection between the device and the sample. A device implantation apparatus comprising a processing means for making connections, which has a processing monitor control device that uses as a signal what is emitted by the focused beam irradiation from at least one of the processing section of the device or the processing stage located behind it. A device implantation device characterized by: 2. Using a focused ion beam (hereinafter abbreviated as FIB), a specific device is cut from a frame on which one or more implanted devices are mounted, which has been manufactured in advance, by the sputtering phenomenon caused by FIB irradiation. During the etching process or assisted etching process using FIB irradiation in a gas atmosphere, data from the implantation device detected in synchronization with beam deflection scanning, or from the processing stage located behind the implantation device as seen from the FIB. Processing using image observation of the implantation device based on at least one of secondary charged particle signals, absorption current signals to the implantation device or processing stage, or emitted light signals from the implantation device or processing stage. Claim 1 characterized in that the control is performed.
Device implantation apparatus as described in Section. 3. Using a focused electron beam (hereinafter abbreviated as FEB), assist etching with FEB irradiation to cut a specific device from a frame on which one or more implantation devices are manufactured in advance. During processing, secondary electron signals or backscattered electron signals from the implantation device detected in synchronization with beam deflection scanning, or from the processing stage located behind the implantation device when viewed from the FEB, the implantation device or the processing stage 2. The device implantation apparatus according to claim 1, wherein processing control is performed using image observation of the implantation device based on at least one type of signal among the absorbed current signals. 4. When using a focused laser beam to cut a specific device from a prefabricated frame carrying one or more implantation devices, the relative position of the beam irradiation part and the frame can be determined. Processing control is performed by observing the image of the implantation device using reflected light signals from the implantation device detected in synchronization with the scanning of the changing beam or frame, or from the processing stage located behind the implantation device when viewed from the laser beam. The device implantation apparatus according to claim 1, characterized in that the device implantation apparatus performs the following: 5. The device implantation apparatus according to claim 1, characterized in that processing control using ions, electrons, and laser light according to claims 2, 3, and 4 is performed in combination. 6. A device implantation method characterized by using a device carrier frame for implantation in which an arm of the device carrier frame on which the implantation device is mounted has a constriction. 7. A device implantation method characterized by using an electrostatic microchuck in which an arm made of an insulator is charged by irradiation with a charged beam and has a suction effect on a microscopic device brought close to the chuck.