JPH0375294A - Molecular beam epitaxial growth of silicon-germanium mixed crystal - Google Patents
Molecular beam epitaxial growth of silicon-germanium mixed crystalInfo
- Publication number
- JPH0375294A JPH0375294A JP21229189A JP21229189A JPH0375294A JP H0375294 A JPH0375294 A JP H0375294A JP 21229189 A JP21229189 A JP 21229189A JP 21229189 A JP21229189 A JP 21229189A JP H0375294 A JPH0375294 A JP H0375294A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- mixed crystal
- epitaxial growth
- molecular beam
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 21
- 239000013078 crystal Substances 0.000 title claims abstract description 20
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910000078 germane Inorganic materials 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000009413 insulation Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 30
- 239000000758 substrate Substances 0.000 description 17
- 239000007787 solid Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910006990 Si1-xGex Inorganic materials 0.000 description 1
- 229910007020 Si1−xGex Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、シリコンゲルマニウム混晶の分子線エピタキ
シャル成長方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for molecular beam epitaxial growth of silicon germanium mixed crystal.
（従来の技術）
シリコンゲルマニウム混晶の分子線エピタキシャル成長
法においては従来シリコンおよびゲルマニウム分子線の
発生方法として固体シリコンと固体ゲルマニウムを電子
線加熱する方法が用いられていた。こうした固体ソース
を用いたシリコンゲルマニウム混晶の分子線エピタキシ
ャル成長では、酸化膜等の絶縁膜上にも多結晶のシリコ
ンゲルマニウム膜が堆積してしまう。このため部分的に
絶縁膜で覆われたシリコンやゲルマニウム、シリコンゲ
ルマニウム等の半導体に対し露出部分だけに選択的にシ
リコンゲルマニウム混晶をエピタキシャル成長すること
は不可能であった。(Prior Art) In the molecular beam epitaxial growth method of silicon-germanium mixed crystal, a method of heating solid silicon and solid germanium with an electron beam has conventionally been used as a method for generating silicon and germanium molecular beams. In molecular beam epitaxial growth of a silicon germanium mixed crystal using such a solid source, a polycrystalline silicon germanium film is deposited even on an insulating film such as an oxide film. For this reason, it has been impossible to epitaxially grow silicon-germanium mixed crystal selectively only on the exposed portions of semiconductors such as silicon, germanium, and silicon-germanium that are partially covered with an insulating film.
（発明が解決しようとする課題）
本発明の目的は、従来の固体ソース分子線エピタキシャ
ル成長方法では不可能であったシリコンゲルマニウム混
晶の選択エピタキシャル成長を実現することである。(Problems to be Solved by the Invention) An object of the present invention is to realize selective epitaxial growth of silicon germanium mixed crystal, which has been impossible with conventional solid source molecular beam epitaxial growth methods.
（課題を解決するための手段）
本発明ではシリコンゲルマニウム混晶を分子線エピタキ
シャル成長させる際にシリコン、ゲルマニウムのソース
としていづれもガスソースを用いる。ゲルマニウムソー
スガスとしてはゲルマンなど、シリコンソースガスとし
てはジシランやシラン等を用いる。このようにすれば部
分的に酸化膜等の絶縁膜で覆われたシリコン、ゲルマニ
ウム、シリコンゲルマ・ニウム等の半導体露出部分だけ
に選択的にエピタキシャル成長できる。(Means for Solving the Problems) In the present invention, a gas source is used as a source of silicon and germanium when a silicon germanium mixed crystal is grown by molecular beam epitaxial growth. Germane or the like is used as the germanium source gas, and disilane, silane, or the like is used as the silicon source gas. In this way, epitaxial growth can be selectively performed only on exposed portions of semiconductors such as silicon, germanium, silicon germanium, etc. that are partially covered with an insulating film such as an oxide film.
（作用）
ガスソース分子線エピタキシャル成長では成長中の真空
度は１Ｏ−５Ｔｏｒｒ以下であり、このような高真空下
では気体は基板温度と熱平衡状態にない。(Function) In gas source molecular beam epitaxial growth, the degree of vacuum during growth is 10-5 Torr or less, and under such a high vacuum, the gas is not in thermal equilibrium with the substrate temperature.
また気体分子同士の衝突確率も極めて小さい。このため
気相中でソースガス分子が解離して基板にいたる通常の
化学気相反応成長法における成長過程は適用されない。Also, the probability of collision between gas molecules is extremely small. For this reason, the growth process in the usual chemical vapor phase reaction growth method, in which source gas molecules dissociate in the gas phase and reach the substrate, cannot be applied.
ガスソース分子線エピタキシャル成長ではソースガス分
子は全て気相中で分解することなしに基板に到達する。In gas source molecular beam epitaxial growth, all source gas molecules reach the substrate without being decomposed in the gas phase.
これらのソースガス分子は基板において熱エネルギーを
受は取り解離吸着することによって成長に寄与する。基
板表面の解離吸着は半導体表面の化学的に活性なダング
リングボンドと気体分子の反応によって起こる。この解
離吸着過程に必要な活性なダングリングボンドは清浄な
半導体表面には存在するが絶縁膜上には存在しない。従
って選択的にエピタキシャル膜を形成することが可能と
なる。シリコンゲルマニウム混晶の選択エピタキシャル
成長を行う場合にはシリコンソースガスとしてジシラン
やシラン等ゲルマニウムソースガスとしてゲルマン等を
用い、これらのソースガスは半導体表面が露出した部分
のみ表面のダングリングボンドにより解離吸着してシリ
コンゲルマニウム混晶の選択成長が開始され、その後も
成長じたシリコンゲルマニウム混晶表面のダングリング
ボンドによって解離吸着が進行するため絶縁膜パターン
の開口部分にはシリコンゲルマニウム混晶が成長する。These source gas molecules contribute to growth by receiving and dissociating and adsorbing thermal energy on the substrate. Dissociative adsorption on the substrate surface occurs due to the reaction between chemically active dangling bonds on the semiconductor surface and gas molecules. The active dangling bonds necessary for this dissociation and adsorption process exist on the clean semiconductor surface, but not on the insulating film. Therefore, it becomes possible to selectively form an epitaxial film. When selective epitaxial growth of silicon germanium mixed crystal is performed, disilane or silane is used as a silicon source gas, and germane is used as a germanium source gas, and these source gases are dissociated and adsorbed by dangling bonds on the surface only where the semiconductor surface is exposed. Selective growth of the silicon germanium mixed crystal is started, and thereafter, dissociation and adsorption proceed due to dangling bonds on the surface of the grown silicon germanium mixed crystal, so that the silicon germanium mixed crystal grows in the opening portion of the insulating film pattern.
一方絶縁膜上には化学的に活発なダングリングボンドが
存在しないためにジシラン、シラン、ゲルマンともに解
離吸着せず、結果としてシリコンゲルマニウム混晶の選
択エピタキシャル成長が実現される。On the other hand, since there are no chemically active dangling bonds on the insulating film, neither disilane, silane, nor germane are dissociated and adsorbed, and as a result, selective epitaxial growth of silicon-germanium mixed crystal is realized.
（実施例）
第１図は、本発明の詳細な説明するためのガスソース分
子線成長装置の概要図である。基板として表面に厚さ５
０００Ａの酸化膜パターンが形成された４インチｎ型５
ｉ（１００）基板１を用いた。この基板はガスソースシ
リコン分子線成長装置２にロードされる。(Example) FIG. 1 is a schematic diagram of a gas source molecular beam growth apparatus for explaining the present invention in detail. Thickness 5 on the surface as a substrate
4 inch n-type 5 with 000A oxide film pattern formed
i(100) substrate 1 was used. This substrate is loaded into a gas source silicon molecular beam growth apparatus 2.
このシリコン基板に対して超高真空の分子線成長装置内
で基板裏側のヒーター３により９００°Ｃ，１０分間の
加熱を行う。このプロセスによって基板表面の初期清浄
化が実現される。表面の清浄さは高速電子銃４と蛍光ス
クリーン５で構成される反射高速電子線回折装置の回折
パターンにおいて、清浄な５ｉ（１００）面に特徴的な
２×１表面超構造と酸化膜に起因するハローな回折パタ
ーンが観察されることで確認した。この基板に対して基
板温度を５５０°Ｃに保ってシリコンソースガスである
ジシランおよびゲルマニウムソースガスであるゲルマン
の混合ガスをガスセル６から供給する。混合ガスのゲル
マンとジシランの混合比はサブチェンバー７に供給され
るジシランガス流量とゲルマンガス流量の比で決定され
る。今回サブチェンバーに供給されるジシラン流量は７
ｓｅｃｍ、ゲルマン流量はｌｓｅｃｍとした。This silicon substrate is heated at 900° C. for 10 minutes using a heater 3 on the back side of the substrate in an ultra-high vacuum molecular beam growth apparatus. This process provides initial cleaning of the substrate surface. The cleanliness of the surface is due to the 2×1 surface superstructure and oxide film characteristic of the clean 5i (100) plane in the diffraction pattern of the reflection high-speed electron diffractometer, which consists of a high-speed electron gun 4 and a fluorescent screen 5. This was confirmed by observing a halo diffraction pattern. A mixed gas of disilane, which is a silicon source gas, and german, which is a germanium source gas, is supplied from the gas cell 6 to this substrate while maintaining the substrate temperature at 550°C. The mixing ratio of germane and disilane in the mixed gas is determined by the ratio of the disilane gas flow rate and the germane gas flow rate supplied to the subchamber 7. The disilane flow rate supplied to the subchamber this time is 7
secm, and the germane flow rate was lscm.
この時出来るシリコンゲルマニウム混晶中の組成比はＸ
線回折およびＸ線光電子分光により決定した。今回の場
合Ｓｉ１−ｘＧｅｘ混晶の混晶比Ｘは０．２であった。The composition ratio of the silicon germanium mixed crystal produced at this time is
Determined by line diffraction and X-ray photoelectron spectroscopy. In this case, the Si1-xGex mixed crystal ratio X was 0.2.
第２図に以上の方法によって厚さ５０００Ａの酸化膜パ
ターン２１によって覆われた５ｉ（１００）基板１上に
作成した膜厚ａｏｏｏＡのシリコンゲルマニウム混晶の
選択エピタキシャル成長膜２０の断面の２次電子走査顕
微鏡観察の結果を示す。図から明らかなようにシリコン
基板の開口部にだけ選択的にエピタキシャル膜が成長じ
ていることがわかる。FIG. 2 shows a secondary electron scan of a cross section of a selective epitaxial growth film 20 of silicon germanium mixed crystal having a film thickness of aoooA formed on a 5i (100) substrate 1 covered with an oxide film pattern 21 having a thickness of 5000A by the above method. The results of microscopic observation are shown. As is clear from the figure, it can be seen that the epitaxial film grows selectively only in the openings of the silicon substrate.
なお、本実施例では絶縁膜としてシリコン酸化膜を用い
たがシリコン窒化膜でもよい。Note that although a silicon oxide film is used as the insulating film in this embodiment, a silicon nitride film may also be used.
（発明の効果）
以上詳しく説明したように本発明を用いれば部分的に絶
縁膜で覆われた半導体に対し露出部分だけに選択的にシ
リコンゲルマニウム混晶膜をエピタキシャル成長させる
ことができる。(Effects of the Invention) As described above in detail, by using the present invention, it is possible to epitaxially grow a silicon germanium mixed crystal film selectively only on the exposed portions of a semiconductor partially covered with an insulating film.
第１図は本発明の詳細な説明するためのガスソース方式
のシリコン分子線エピタキシャル成長装置の装置概略図
である。
図において、ｌは４インチｎ型５ｉ（１００）基板、２
はシリコン分子線成長装置、３は基板ヒーター、４は反
射高速電子線回折用高速電子銃、５は反射高速電子線回
折パターン観測用蛍光スクリーン、６はガスセル、７は
サブチェンバー、８．９はソースガス流量制御のための
マスフローコントローラー、１０はジシランガスボンベ
、１１はゲルマンガスボンベである。
第２図は第１図の装置を用いて得られた選択的に成長じ
たシリコンゲルマニウム混晶エピタキシャル膜の断面を
２次電子走査顕微鏡で観察した結果を示す図である。
図において、２０はシリコンゲルマニウム混晶エピタキ
シャル膜、２１は酸化膜パターンである。FIG. 1 is a schematic diagram of a gas source type silicon molecular beam epitaxial growth apparatus for explaining the present invention in detail. In the figure, l is a 4-inch n-type 5i (100) substrate, 2
3 is a silicon molecular beam growth apparatus, 3 is a substrate heater, 4 is a high-speed electron gun for reflective high-speed electron diffraction, 5 is a fluorescent screen for observing reflective high-speed electron diffraction patterns, 6 is a gas cell, 7 is a subchamber, 8.9 is a A mass flow controller for controlling the flow rate of source gas, 10 a disilane gas cylinder, and 11 a germane gas cylinder. FIG. 2 is a diagram showing the result of observing a cross section of a selectively grown silicon germanium mixed crystal epitaxial film obtained using the apparatus shown in FIG. 1 using a secondary electron scanning microscope. In the figure, 20 is a silicon germanium mixed crystal epitaxial film, and 21 is an oxide film pattern.
Claims (1)
れもガスソースを用いることを特徴とするシリコンゲル
マニウム混晶の分子線エピタキシャル成長方法。(1) A method for molecular beam epitaxial growth of silicon-germanium mixed crystal, characterized in that gas sources are used as germanium and silicon sources.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1212291A JP2596135B2 (en) | 1989-08-18 | 1989-08-18 | Molecular beam epitaxial growth method of silicon germanium mixed crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1212291A JP2596135B2 (en) | 1989-08-18 | 1989-08-18 | Molecular beam epitaxial growth method of silicon germanium mixed crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0375294A true JPH0375294A (en) | 1991-03-29 |
| JP2596135B2 JP2596135B2 (en) | 1997-04-02 |
Family
ID=16620161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1212291A Expired - Lifetime JP2596135B2 (en) | 1989-08-18 | 1989-08-18 | Molecular beam epitaxial growth method of silicon germanium mixed crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2596135B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313378A (en) * | 1986-07-04 | 1988-01-20 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
| JPS63122116A (en) * | 1986-11-11 | 1988-05-26 | Seiko Epson Corp | Manufacture of modulated doped superlattice structure |
-
1989
- 1989-08-18 JP JP1212291A patent/JP2596135B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313378A (en) * | 1986-07-04 | 1988-01-20 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
| JPS63122116A (en) * | 1986-11-11 | 1988-05-26 | Seiko Epson Corp | Manufacture of modulated doped superlattice structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2596135B2 (en) | 1997-04-02 |
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