JPH0373036U - - Google Patents

Info

Publication number

JPH0373036U

JPH0373036U JP13320889U JP13320889U JPH0373036U JP H0373036 U JPH0373036 U JP H0373036U JP 13320889 U JP13320889 U JP 13320889U JP 13320889 U JP13320889 U JP 13320889U JP H0373036 U JPH0373036 U JP H0373036U

Authority

JP

Japan

Prior art keywords

flop

field effect

effect transistor

mos field

timer circuit

Prior art date

1989-11-15

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
• Discuss

• 230000005669 field effect Effects 0.000 claims description 5
• 238000010586 diagram Methods 0.000 description 5
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
• 239000003990 capacitor Substances 0.000 description 1
• 229910052681 coesite Inorganic materials 0.000 description 1
• 229910052906 cristobalite Inorganic materials 0.000 description 1
• 239000000377 silicon dioxide Substances 0.000 description 1
• 235000012239 silicon dioxide Nutrition 0.000 description 1
• 229910052682 stishovite Inorganic materials 0.000 description 1
• 239000000758 substrate Substances 0.000 description 1
• 229910052905 tridymite Inorganic materials 0.000 description 1