JPH0368759A - Thin film forming device - Google Patents
Thin film forming deviceInfo
- Publication number
- JPH0368759A JPH0368759A JP1043757A JP4375789A JPH0368759A JP H0368759 A JPH0368759 A JP H0368759A JP 1043757 A JP1043757 A JP 1043757A JP 4375789 A JP4375789 A JP 4375789A JP H0368759 A JPH0368759 A JP H0368759A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- boat
- thin film
- evaporation
- deposit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000007740 vapor deposition Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 description 30
- 230000008020 evaporation Effects 0.000 description 29
- 239000010408 film Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 5
- FPHIOHCCQGUGKU-UHFFFAOYSA-L difluorolead Chemical compound F[Pb]F FPHIOHCCQGUGKU-UHFFFAOYSA-L 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光学製品における反射防止膜あるいは部分透
過膜などのいわゆる薄膜を形成する薄膜形成装置に関し
、膜厚の制御を容易にならしめるため、蒸着物の蒸発速
度を安定にすることのできる薄膜形成装置を提供するこ
とを目的とするものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thin film forming apparatus for forming so-called thin films such as antireflection films or partially transmitting films in optical products. The object of the present invention is to provide a thin film forming apparatus that can stabilize the evaporation rate of substances.
従来例の構成とその問題点
従来、この種の薄膜を形成するのに真空蒸着法が用いら
れるが、真空蒸着法は、一般に第1図に示す様な構成を
用いる。第1図において蒸着物1は、蒸発用のボート(
加熱体)2の中に設置されボート2を直接電流等により
加熱する事により蒸発しシャッター板3の開閉動作で膜
厚を制御し、開時に、支柱4に固定された基板支持具6
によう支えられた被蒸着基板6に蒸着させて、目的に応
じた薄膜を得るものである。この時、蒸着物1の蒸発速
度は水晶振動子7への蒸着膜厚を膜厚モニター8によう
監視させボート2の電源9にフィードバックし一定に出
来る様に配慮されている。Conventional Structure and Problems Conventionally, a vacuum evaporation method has been used to form this type of thin film, and the vacuum evaporation method generally uses a structure as shown in FIG. In FIG. 1, the deposit 1 is placed in an evaporation boat (
The boat 2 is evaporated by directly heating the boat 2 with an electric current, etc., and the film thickness is controlled by opening and closing the shutter plate 3. When the shutter plate 3 is opened, the substrate support 6 fixed to the support column 4
The thin film is deposited on the substrate 6 supported by the evaporator to obtain a thin film depending on the purpose. At this time, consideration is given to keeping the evaporation rate of the deposit 1 constant by monitoring the thickness of the deposited film on the crystal oscillator 7 with a film thickness monitor 8 and feeding it back to the power supply 9 of the boat 2.
な釦、10はペース11上に設置された真空容器であシ
、12はペース11に形成された排気孔であυ、ボート
2は、絶縁体13によってペース11から題された電極
支柱14によシ、電源9に接続されている。10 is a vacuum container installed on the pace 11, 12 is an exhaust hole formed in the pace 11, and the boat 2 is connected from the pace 11 to the electrode column 14 by an insulator 13. Yes, it is connected to power supply 9.
ところで、従来のボート2は第2図(a) 、 (b)
に示すように、皿状に形成されていて、その中に蒸着物
1が設置されるものであシ、蒸着物1はボート2の底面
から側面にわたってボート2に直接接触して加熱される
ようになっている。By the way, the conventional boat 2 is shown in Figures 2 (a) and (b).
As shown in the figure, it is formed into a dish shape, and the vapor deposit 1 is placed inside the dish. It has become.
このようなボート2内に蒸着物1としてPbF2の粉末
を設置して、第1図に示す装置で薄膜の形成を行なうと
、たとえ膜厚モニター8のフィードバックがあっても、
第3図に示すようにその蒸発速度を一定にすることが困
難であった。第3図は蒸着時間に対する蒸発速度及び被
蒸着基板の透過度を示す図であって、同図からもわかる
ように、蒸発速度はシャッター開時(時間0分)以降蒸
着の時間経過に対して±3.5人/seaの大きな範囲
で変動しておシ、非常に不安定である。したがって被蒸
着基板の透過度も安定しておらず、薄膜の膜厚も安定し
た厚さで形成されていないため膜厚の制御が非常に困難
である。When PbF2 powder is placed as the deposit 1 in such a boat 2 and a thin film is formed using the apparatus shown in FIG. 1, even if there is feedback from the film thickness monitor 8,
As shown in FIG. 3, it was difficult to keep the evaporation rate constant. FIG. 3 is a diagram showing the evaporation rate and the transmittance of the substrate to be evaporated with respect to the evaporation time. As can be seen from the figure, the evaporation rate is dependent on the elapsed time of the evaporation after the shutter is opened (time 0 minutes). It fluctuates over a wide range of ±3.5 people/sea and is extremely unstable. Therefore, the transmittance of the substrate to be evaporated is not stable, and the thickness of the thin film is also not stable, making it very difficult to control the film thickness.
このような蒸発速度の不安定性は蒸着物がPbF2の粉
末などのように焼結性を示す物質の場合に特に顕著であ
った。これは、蒸着物1を第2図a、bに示すポート2
内に直接設置すると、蒸着物1は直接加熱されることに
なう、蒸着の時間経過とともに蒸着物1とボート2との
接触部分から蒸発やシンターリング(体積収縮)が生じ
、これによって蒸着物1の形状が崩れ落ちこれが繰シ返
されて蒸着物1とボート2との接触面積が大きくなった
り小さくなったシ激しく変化するためと考えられる。Such instability in the evaporation rate was particularly noticeable when the deposit was a substance exhibiting sinterability, such as PbF2 powder. This connects the deposit 1 to the port 2 shown in Figure 2a, b.
If the deposit 1 is placed directly in the boat 2, the deposit 1 will be directly heated.As the deposition time progresses, evaporation and sintering (volume shrinkage) will occur from the contact area between the deposit 1 and the boat 2, and this will cause the deposit 1 to heat up directly. This is thought to be because the shape of the evaporated material 1 collapses and this is repeated, and the contact area between the vapor deposited material 1 and the boat 2 becomes larger or smaller and changes drastically.
発明の目的
本発明は、この様な従来法の欠点を改善し、蒸着物の蒸
発速度が安定であって、容易で、再現性が高く光学部品
等の歩留シを向上させ得る薄膜形成装置を提供すること
を目的とするものである。Purpose of the Invention The present invention is directed to a thin film forming apparatus that improves the drawbacks of the conventional methods, has a stable evaporation rate of deposits, is easy to use, has high reproducibility, and can improve the yield of optical components, etc. The purpose is to provide the following.
発明の構成
このような目的を達成するため本発明は、凹部を有する
皿状蒸発用加熱体の凹部内に間接加熱のための複数の穴
のあいた中板を底面からある一定の距離をおいて設置し
、蒸着基板をこれと対向配置させた薄膜形成装置である
。Structure of the Invention In order to achieve the above object, the present invention provides a dish-shaped evaporation heating element having a recess, and a middle plate with a plurality of holes for indirect heating placed in the recess at a certain distance from the bottom surface. This is a thin film forming apparatus in which the evaporation substrate is placed opposite to the evaporation substrate.
実施例の説明 以下に本発明の実施例を図面を用いて説明する。Description of examples Embodiments of the present invention will be described below with reference to the drawings.
第4図(a) 、 (b)は本発明の薄膜形成装置に用
いられる加熱体の一実施例を示す平面図及び断面図であ
る。第4図(a) 、 (b)において加熱体は凹状の
箱型ボート2と、その内部に底面から所定間隔だけ離し
て設置された多数の穴16のあいた中板16からなって
いる。蒸着物1は中板16上に設置される。中板16は
箱型ボート2の内寸法よシ約10優程小さく作っている
ため、穴16のあいた中板16と箱型ボート2の間にす
き間17が出来る。FIGS. 4(a) and 4(b) are a plan view and a sectional view showing an embodiment of a heating body used in the thin film forming apparatus of the present invention. In FIGS. 4(a) and 4(b), the heating body consists of a concave box-shaped boat 2 and a middle plate 16 having a number of holes 16 installed therein at a predetermined distance from the bottom surface. The deposit 1 is placed on the intermediate plate 16. Since the middle plate 16 is made to be about 10 mm smaller than the internal dimensions of the box-shaped boat 2, a gap 17 is created between the middle plate 16 with the hole 16 and the box-shaped boat 2.
この状態で第1図に示す様な真空装置10内に従来同様
に設置し、真空排気後9箱型ポート2に徐々に通電する
。蒸着物1は箱型ボート2の加熱に伴なって体積収縮(
シンターリング)をする。更に電流を増し、箱型ボート
2の温度を上昇させることにより1蒸着物1は底部を含
めた周囲から次第に蒸発をはじめるようになシ、一定の
蒸発速度になる様箱型ボート電流により調節する。In this state, it is installed in a vacuum apparatus 10 as shown in FIG. 1 in the conventional manner, and after evacuation, electricity is gradually applied to the nine box-shaped ports 2. The deposit 1 undergoes volumetric contraction (
sintering). By further increasing the current and raising the temperature of the box boat 2, the deposit 1 gradually begins to evaporate from the surrounding area including the bottom, and the box boat current is adjusted to maintain a constant evaporation rate. .
本実施例においては、蒸着物1は穴16のあいた中板1
6とすき間17により、直接発熱体である箱型ボート2
に接触せず、周囲からの輻射熱と、穴あきの中板16か
らの伝導熱により均一に加熱されるため、蒸発速度の制
御が容易となる。In this embodiment, the deposit 1 is an intermediate plate 1 with holes 16.
6 and the gap 17, the box-shaped boat 2, which is a direct heating element,
The evaporation rate can be easily controlled because the evaporation rate is uniformly heated by radiant heat from the surroundings and conductive heat from the perforated intermediate plate 16.
第6図は本発明にかかる加熱体の他の実施例を示す断面
図であって、蒸着物1は箱型ボート2内にあって、穴1
6のあいた中板16に載せられる。FIG. 6 is a sectional view showing another embodiment of the heating body according to the present invention, in which the deposit 1 is in a box-shaped boat 2 and the hole 1 is
It is placed on the middle plate 16 with 6 holes.
この穴15のあいた中板16は、箱型ボート2の内側底
部に突起状の受け18を設けて箱型ボート2の底部から
ある一定の距離を釦いて設置される。The middle plate 16 with the hole 15 is installed at a certain distance from the bottom of the box-shaped boat 2 by providing a protruding receiver 18 on the inner bottom of the box-shaped boat 2.
さらに穴16のあいた中板16は箱型ボート2の内寸法
よシ約10%程小さく作っているため穴16のあいた中
板16と箱型ボート2との間にすき間17が出来る。こ
の状態で真空装置内に設置し、真空排気後、箱型ボート
2に徐々に通電する。蒸着物1は箱型ボート2の加熱に
伴なって体積収縮をする。更に電流を増し、箱型ボート
2の温度を上昇させることによシ、蒸着物1は底部を含
めた周囲から次第に蒸発をはじめる様になり一定の蒸発
速度になる様箱型ポート電流によシ調節する。Furthermore, since the middle plate 16 with the holes 16 is made smaller by about 10% than the internal dimensions of the box-shaped boat 2, a gap 17 is created between the middle plate 16 with the holes 16 and the box-shaped boat 2. In this state, it is installed in a vacuum device, and after evacuation, the box-shaped boat 2 is gradually energized. The deposit 1 shrinks in volume as the box-shaped boat 2 is heated. By further increasing the current and raising the temperature of the box-shaped boat 2, the deposit 1 gradually starts to evaporate from the surrounding area including the bottom, and the box-shaped port current is increased so that the evaporation rate becomes constant. Adjust.
本実施例においては、蒸着物1は、穴16のあいた中板
16とすき間17によう直接発熱体である箱型ボート2
に接触せず、周囲からの輻射熱と穴15のあいた中板1
6からの伝導熱により均一に加熱されるため、蒸発速度
の制御が容易となる。In this embodiment, the deposit 1 is directly applied to a box-shaped boat 2 which is a heating element between a middle plate 16 having holes 16 and a gap 17.
Intermediate plate 1 with holes 15 that does not come in contact with radiant heat from the surroundings
Since it is heated uniformly by the conductive heat from 6, it becomes easy to control the evaporation rate.
次に、本発明の具体的な実施例を説明する。本実施例に
ネ・いては、炭酸ガヌレーザ共振器用意材としてZn5
e(セレン化亜鉛)基板にPbF2を反射防止膜として
形成した場合について説明する。Next, specific examples of the present invention will be described. In this example, Zn5 was used as the material for preparing the carbon dioxide laser resonator.
A case where PbF2 is formed as an antireflection film on an e (zinc selenide) substrate will be described.
被蒸着基板としてZn5eの両面鏡面@層板を用い蒸着
物質として反射防止膜の条件にほぼ等しいPb F2の
粉末を用いた。(反射防止膜の条件:nt =R、nt
x df−λ/4.nf=膜の屈折率。A Zn5e double-sided mirror-finished @layer plate was used as the substrate to be vapor deposited, and Pb F2 powder, which had almost the same conditions as the antireflection film, was used as the vapor deposition material. (Conditions for anti-reflection film: nt = R, nt
x df-λ/4. nf = refractive index of the film.
n8= 基板の屈折率、df=膜の幾可学的厚さ、λ=
10.6μm)箱型蒸発用ボートとしてMoを用い、第
4図(a) 、 <b)に示す中板をptを用いてボー
ト内に設置した。真空度は約10Torτ、基板温度は
1.10℃で膜形成を行った。その時の蒸発速度と光学
的膜厚の変化を第6図に示す。n8 = refractive index of the substrate, df = geometric thickness of the film, λ =
10.6 μm) Mo was used as a box-shaped evaporation boat, and the middle plate shown in FIG. 4(a) and <b) was installed in the boat using PT. The film was formed at a vacuum degree of about 10 Torτ and a substrate temperature of 1.10°C. FIG. 6 shows the changes in evaporation rate and optical film thickness at that time.
第6図からもわかるように、本実施例に釦いてはシャソ
ター開時(時間0分)から1分経過後には、蒸発速度は
8±0,5A/seaと、第3図に示した従来の蒸発速
度に比して非常に安定している。As can be seen from FIG. 6, in this embodiment, the evaporation rate is 8±0.5 A/sea after 1 minute has passed since the shutter was opened (time 0 minutes), compared to the conventional method shown in FIG. It is very stable compared to the evaporation rate of
したがって被蒸着基板の透過度も時間の経過と共に安定
した変化を示して釦り、薄膜の膜厚が常に一定の厚さで
形成され、膜厚の制御が非常に簡単に行なえることがわ
かる。Therefore, it can be seen that the transmittance of the substrate to be evaporated also shows a stable change with the passage of time, that the thin film is always formed at a constant thickness, and that the film thickness can be controlled very easily.
なお、本実施例では中板16としてptを用いたが、そ
の他に、W、Ta 、Moなど、熱伝導性の良い抵抗加
熱に用いられる一般的な材料が利用できる。In this embodiment, PT was used as the intermediate plate 16, but other materials such as W, Ta, Mo, and other common materials used for resistance heating with good thermal conductivity can be used.
発明の詳細
な説明したように本発明によれば蒸着物を皿状加熱体の
凹部内に底面から離間して配された穴あきの中板上に配
し、蒸着基板をこれに対向して配するようにした薄膜形
成装置で、皿状加熱体からの輻射熱を有効に利用し、こ
れと中板からの伝導熱の両者によシ加熱するものである
ため、従来のように蒸着の時間経過に伴って蒸着物が崩
れ落ちて加熱体との接触面積が大きく変化することはな
く接触面積は徐々に変化することになるので蒸発速度は
一定に保たれ、膜厚の高精度な制御が非常に容易になシ
、光学部品等の歩留すを向上させることができる。DETAILED DESCRIPTION OF THE INVENTION According to the present invention, as described in detail, a vapor deposited material is placed on a perforated intermediate plate placed in a recessed portion of a dish-shaped heating element at a distance from the bottom surface, and a vapor deposition substrate is placed opposite thereto. This thin film forming apparatus effectively utilizes the radiant heat from the dish-shaped heating element, and heats by both this and conductive heat from the middle plate, so the time lapse of vapor deposition is shorter than in conventional methods. The contact area with the heating element does not change greatly due to the evaporated material collapsing, but instead changes gradually, so the evaporation rate is kept constant and the film thickness can be controlled with high precision. The yield of optical parts, etc. can be easily improved.
第1図は従来の真空蒸着装置の概略断面図、第2図(a
) 、 (b)はそれぞれ従来の薄膜形成装置で用いる
蒸発用ボートを示す断崩図及び平崩図、第3図は従来の
蒸着法でのM定速度と透過度の時間変化を示す図、第4
図(a) 、 (b)はそれぞれ本発明の薄膜形成装置
に用いられる蒸発用ボートの一実施例を示す平面図およ
び断面図、第5図は同蒸発用ボートの他の実施例を示す
断面図、第6図は本発明の一実施例による蒸発速度と透
過度の時間変化を示す図である。
1・・・・・・蒸着物、2・・・・・・蒸発用箱型ボー
ト、3・・・・・・シャッター、4・・・・・・支柱、
5・・・・・・基板支持具、6・・・・・・被蒸着基板
、7・・・・・・水晶振動子、8・・・・・・膜厚モニ
ター、9・・・・・・電源、10・・・・・・真空容器
、12・・・・・・排気孔、16・・・・・・穴、16
・・・・・・中板、17・・・・・・すき間、18・・
・・・・突起状の受け。Figure 1 is a schematic cross-sectional view of a conventional vacuum evaporation apparatus, and Figure 2 (a
) and (b) are respectively a collapse diagram and a flat collapse diagram showing the evaporation boat used in the conventional thin film forming apparatus, and Figure 3 is a diagram showing the time change of M constant velocity and permeability in the conventional evaporation method. Fourth
Figures (a) and (b) are a plan view and a cross-sectional view, respectively, showing one embodiment of the evaporation boat used in the thin film forming apparatus of the present invention, and Fig. 5 is a cross-section showing another embodiment of the same evaporation boat. 6 are diagrams showing temporal changes in evaporation rate and permeability according to an embodiment of the present invention. 1... Vapor deposit, 2... Evaporation box boat, 3... Shutter, 4... Support column,
5... Substrate supporter, 6... Substrate to be deposited, 7... Crystal resonator, 8... Film thickness monitor, 9...・Power supply, 10... Vacuum container, 12... Exhaust hole, 16... Hole, 16
...Middle plate, 17...Gap, 18...
・・・Protruding receiver.
Claims (1)
板と対向して前記真空容器内に配置された凹部を有する
皿状加熱体と、前記皿状加熱体の凹部内に底面から離間
して配置され、かつ複数の穴を有する中板とを備えた薄
膜形成装置。a vacuum vessel in which a substrate to be deposited is installed; a dish-shaped heating body having a recess disposed in the vacuum vessel facing the deposition substrate; 1. A thin film forming apparatus comprising: a middle plate arranged in a central plate and having a plurality of holes;
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1043757A JPH0368759A (en) | 1989-02-23 | 1989-02-23 | Thin film forming device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1043757A JPH0368759A (en) | 1989-02-23 | 1989-02-23 | Thin film forming device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57222415A Division JPS59113174A (en) | 1982-12-17 | 1982-12-17 | Method and device for forming thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0368759A true JPH0368759A (en) | 1991-03-25 |
JPH0477071B2 JPH0477071B2 (en) | 1992-12-07 |
Family
ID=12672634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1043757A Granted JPH0368759A (en) | 1989-02-23 | 1989-02-23 | Thin film forming device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0368759A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008255465A (en) * | 2007-03-15 | 2008-10-23 | Nippon Steel Materials Co Ltd | Method for manufacturing silicon monoxide vapor deposition material and its manufacturing method |
-
1989
- 1989-02-23 JP JP1043757A patent/JPH0368759A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008255465A (en) * | 2007-03-15 | 2008-10-23 | Nippon Steel Materials Co Ltd | Method for manufacturing silicon monoxide vapor deposition material and its manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
JPH0477071B2 (en) | 1992-12-07 |
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