JPH036847A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH036847A JPH036847A JP14333689A JP14333689A JPH036847A JP H036847 A JPH036847 A JP H036847A JP 14333689 A JP14333689 A JP 14333689A JP 14333689 A JP14333689 A JP 14333689A JP H036847 A JPH036847 A JP H036847A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- mica
- softening point
- novolak
- resin composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000003822 epoxy resin Substances 0.000 claims abstract description 35
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 35
- 239000000203 mixture Substances 0.000 claims abstract description 24
- 239000010445 mica Substances 0.000 claims abstract description 19
- 229910052618 mica group Inorganic materials 0.000 claims abstract description 19
- 229920003986 novolac Polymers 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 5
- 239000010680 novolac-type phenolic resin Substances 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims 1
- 229920005989 resin Polymers 0.000 abstract description 14
- 239000011347 resin Substances 0.000 abstract description 14
- 229910000679 solder Inorganic materials 0.000 abstract description 13
- 238000007789 sealing Methods 0.000 abstract description 12
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 5
- 238000000465 moulding Methods 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 239000012779 reinforcing material Substances 0.000 abstract description 2
- -1 2-(dimethylamino)methylphenol quaternary ammonium salt Chemical class 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000005011 phenolic resin Substances 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011256 inorganic filler Substances 0.000 description 3
- 229910003475 inorganic filler Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- RXYPXQSKLGGKOL-UHFFFAOYSA-N 1,4-dimethylpiperazine Chemical compound CN1CCN(C)CC1 RXYPXQSKLGGKOL-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- MLAZAKLBWAQRPR-UHFFFAOYSA-M (3-benzyl-2-methylpentan-2-yl)-tributylazanium;chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)C(C)(C)C(CC)CC1=CC=CC=C1 MLAZAKLBWAQRPR-UHFFFAOYSA-M 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- FUIQBJHUESBZNU-UHFFFAOYSA-N 2-[(dimethylazaniumyl)methyl]phenolate Chemical compound CN(C)CC1=CC=CC=C1O FUIQBJHUESBZNU-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 1
- WMNWJTDAUWBXFJ-UHFFFAOYSA-N 3,3,4-trimethylheptane-2,2-diamine Chemical compound CCCC(C)C(C)(C)C(C)(N)N WMNWJTDAUWBXFJ-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 101150100265 cif-1 gene Proteins 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000005007 epoxy-phenolic resin Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半田浸漬時の耐クラツク性に優れた半導体
装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device that has excellent crack resistance during solder immersion.
［従来の技術］
トランジスタ、ＩＣ，ＬＳＩ等の半導体素子は、機械的
強度、耐湿性等の観点からセラミックパッケージもしく
はプラスチックパッケージ等により封止され、半導体装
置化されている。上記セラミックパッケージは、構成材
料そのものが耐熱性を有し、耐透湿性にも優れているた
め、高温度。[Prior Art] Semiconductor elements such as transistors, ICs, and LSIs are sealed with ceramic packages, plastic packages, etc. from the viewpoint of mechanical strength, moisture resistance, etc., and are made into semiconductor devices. The ceramic package mentioned above is heat resistant and has excellent moisture permeability, so it can withstand high temperatures.
高湿度に対して強く信顧性の高い封止が可能である。し
かしながら、構成材料が比較的高価なものであることと
、量産性に劣る欠点があるため、最近では上記プラスチ
ックパッケージを用いた樹脂封止が主流になっている。Enables highly reliable sealing that is strong against high humidity. However, since the constituent materials are relatively expensive and the mass productivity is poor, resin sealing using the above-mentioned plastic package has recently become mainstream.
この種の樹脂封止には、従来からエポキシ樹脂組成物が
使用されており、良好な成績を収めている。Epoxy resin compositions have conventionally been used for this type of resin sealing, and have achieved good results.
しかしながら、最近では、半導体分野の技術革新により
パッケージも小形化、薄形化する傾向にあり、かつパッ
ケージ実装時に表面実装が行われている。このような表
面実装では、パッケージ全体を半田浸漬したり、ハンダ
リフロー炉により加熱したりするため大きな熱衝撃をう
ける。その結果、例えば第３図に示すように、パッケー
ジに、エポキシ樹脂組成物に含有されるシリカ粉末（無
機質充填剤）１表面に沿ってクラック５が生じるという
現象が発生している。図において、２は封止樹脂である
。このようなりラック５の発生による半導体素子の破壊
やクラツク５沿面からの水分浸入による半導体素子の腐
食により、半導体装置の信転性が著しく低下してしまう
という問題が生している。However, in recent years, due to technological innovation in the semiconductor field, there has been a trend toward smaller and thinner packages, and surface mounting is now being performed when packaging packages. In this type of surface mounting, the entire package is immersed in solder or heated in a solder reflow oven, which results in a large thermal shock. As a result, for example, as shown in FIG. 3, a phenomenon occurs in which cracks 5 are formed along the surface of the silica powder (inorganic filler) 1 contained in the epoxy resin composition in the package. In the figure, 2 is a sealing resin. A problem arises in that the reliability of the semiconductor device is significantly reduced due to destruction of the semiconductor element due to the generation of the rack 5 and corrosion of the semiconductor element due to moisture intrusion from the surface of the crack 5.
この発明は、このような事情に鑑みなされたもので、半
田浸漬時における耐クラツク性に優れた半導体装置の提
供をその目的とする。The present invention was made in view of the above circumstances, and an object thereof is to provide a semiconductor device having excellent crack resistance during solder immersion.
〔問題点を解決するための手段］
上記の目的を達成するため、この発明の半導体装置は、
下記の（Ａ）〜（Ｃ）成分を含有するエポキシ樹脂組成
物を用いて半導体素子を封止するという構成をとる。[Means for solving the problems] In order to achieve the above object, the semiconductor device of the present invention has the following features:
The structure is such that a semiconductor element is sealed using an epoxy resin composition containing the following components (A) to (C).
（Ａ）軟化点５０〜１３０℃のノボラック型エポキシ樹
脂。(A) Novolac type epoxy resin with a softening point of 50 to 130°C.
（Ｂ）軟化点５０〜１３０℃のノボラック型フェノール
樹脂。(B) Novolac type phenolic resin with a softening point of 50 to 130°C.
（Ｃ）平均粒径５〜４０μｍのマイカ。(C) Mica with an average particle size of 5 to 40 μm.
すなわち、この発明者は、半田浸漬においてクラックの
生じない封止樹脂を得るために一連の研究を重ねた。そ
の結果、特定の軟化点を有するエポキシ樹脂およびフェ
ノール樹脂を用い、さらに補強材として平均粒径が特定
範囲のマイカを配合すると、パッケージ成形時にマイカ
が成形型内のエポキシ樹脂組成物の流れ方向に配向して
クシツクの発生進行を抑制しうろことを見出しこの発明
に到達した。That is, the inventor conducted a series of studies in order to obtain a sealing resin that does not cause cracks when immersed in solder. As a result, when epoxy resins and phenolic resins with specific softening points are used, and mica with an average particle size within a specific range is added as a reinforcing material, mica flows in the flow direction of the epoxy resin composition in the mold during package molding. The present invention was achieved by discovering that the scales can be oriented to suppress the development and progression of scorching.
この発明に用いるエポキシ樹脂組成物は、特定のノボラ
ック型エポキシ樹脂（Ａ成分）と、特定のノボラック型
フェノール樹脂（Ｂ成分）と、特定のマイカ（Ｃ成分）
とを用いて得られるものであり、通常、粉末状もしくは
それを打錠したタブレット状になっている。The epoxy resin composition used in this invention comprises a specific novolac type epoxy resin (component A), a specific novolac type phenol resin (component B), and a specific mica (component C).
It is usually obtained in the form of a powder or a tablet made by compressing it.
上記Ａ成分の特定のノボラック型エポキシ樹脂は、軟化
点が５０〜１３０℃のものであれば、特に制限するもの
ではなく、例えばクレゾールノボラック、フェノールノ
ボラ゛ンク等適宜に選択することができる。特に、クレ
ゾールノボラックが好ましく、なかでもエポキシ当量１
８０〜２５０の範囲のものが好適に用いられる
上記Ａ成分とともに用いるＢ成分の特定のノボラック型
フェノール樹脂は、上記エポキシ樹脂の硬化剤として作
用するものであり、軟化点５０〜１３０℃のものを用い
る必要がある。例えば、上記軟化点を有するフェノール
ノボラック、クレゾールノボラック等が好適に用いられ
る。The specific novolac type epoxy resin of the above-mentioned A component is not particularly limited as long as it has a softening point of 50 to 130 DEG C., and can be appropriately selected, for example, cresol novolak, phenol novolak, etc. Particularly preferred are cresol novolaks, especially those with an epoxy equivalent of 1
The specific novolac type phenolic resin of component B used together with the above component A, which is preferably in the range of 80 to 250, acts as a curing agent for the epoxy resin, and has a softening point of 50 to 130°C. It is necessary to use it. For example, phenol novolak, cresol novolak, etc. having the above-mentioned softening point are preferably used.
上記特定のノボラ・ンク型エポキシ樹脂（Ａ成分）と特
定のノボラック型フェノール樹脂（Ｂ成分）との配合比
は、上記Ａ成分中のエポキシ基１当量当たりＢ成分中の
水酸基が０．５〜２．０当量となるように配合すること
が好適である。The blending ratio of the specific novolac type epoxy resin (component A) and the specific novolac type phenol resin (component B) is such that the proportion of hydroxyl groups in component B is 0.5 to 1 equivalent of epoxy group in component A. It is preferable to mix it so that it becomes 2.0 equivalent.
上記Ａ成分およびＢ成分とともに用いられるＣ成分の特
定のマイカとしては、特に限定するものではな〈従来公
知のものを用いることができるが、平均粒径５〜４０μ
ｍのものを用いなければならない。The specific mica for component C used together with component A and component B is not particularly limited. Conventionally known mica can be used, but the average particle size is 5 to 40 μm.
m must be used.
上記Ｃ成分の特定のマイカの含有量は、エポキシ樹脂組
成物全体の５〜６０重量％（以下「％」と略す）の範囲
に設定することが好適である。より好適なのは５〜５０
％である。すなわち、Ｃ成分の特定のマイカの含有量が
５％未満になると得られるエポキシ樹脂組成物で樹脂封
止された半導体装置の充分な耐半田クラック性が得られ
ず、逆に６０％を超えるとエポキシ樹脂組成物の溶融粘
度が上昇し良好な封止樹脂が得られにく（なる傾向がみ
られるからである。The content of the specific mica of the C component is preferably set in the range of 5 to 60% by weight (hereinafter abbreviated as "%") of the entire epoxy resin composition. More suitable is 5-50
%. In other words, if the specific mica content of the C component is less than 5%, sufficient solder crack resistance of the semiconductor device resin-sealed with the resulting epoxy resin composition cannot be obtained, and conversely, if it exceeds 60%, This is because the melt viscosity of the epoxy resin composition increases, making it difficult to obtain a good sealing resin.
なお、この発明に用いるエポキシ樹脂組成物には、通常
、上記Ａ−Ｃ成分以外に従来から用いられている各種の
硬化促進剤が単独でもしくは併せて用いられる。In addition, in the epoxy resin composition used in this invention, various conventionally used curing accelerators are usually used alone or in combination in addition to the above-mentioned A to C components.
上記各種の硬化促進剤としては、下記に示す三級アミン
、四級アンモニウム塩、イミダゾール類およびホウ素化
合物等が好適なものとしてあげられる。Suitable examples of the various curing accelerators mentioned above include tertiary amines, quaternary ammonium salts, imidazoles, and boron compounds shown below.
三級アミン
トリエタノールアミン、テトラメチルヘキサンジアミン
、トリエチレンジアミン、ジメチルアニリン、ジメチル
アミノエタノール、ジエチルアミノエタノール、２，４
．６−（ジメチルアミノメチル）フェノール、Ｎ、Ｎ’
−ジメチルピペラジン、ピリジン、ピコリン、１，８
−ジアザ−ビシクロ（５，４，Ｑ）ウンデセン−７、ベ
ンジルジメチルアミン、２−（ジメチルアミノ）メチル
フェノール
四級アンモニウム塩
ドデシルトリメチルアンモニウムアイオダイド、セチル
トリメチルアンモニウムクロライド、ベンジルジメチル
テトラブチルアンモニウムクロライド、ステアリルトリ
メチルアンモニウムクロライド
イミダゾール類
２−メチルイミダゾール、２−ウンデシルイミタソール
、２−エチルイミダゾール、１−ベンジル−２−メチル
イミダゾール、■−シアノエチルー２−ウンデシルイミ
ダゾール
ホウ素化合物
テトラフェニルボロン、テトラフェニルボレート、Ｎ−
メチルモルホリンテトラフェニルボレート
また、必要に応じて、上記成分原料以外に、無機質充填
剤、三酸化アンチモン、ハロゲン系化合物等の難燃剤や
顔料、シランカップリング剤等のカップリング剤等その
他の添加剤を用いることができる。Tertiary amine triethanolamine, tetramethylhexanediamine, triethylenediamine, dimethylaniline, dimethylaminoethanol, diethylaminoethanol, 2,4
．． 6-(dimethylaminomethyl)phenol, N, N'
-dimethylpiperazine, pyridine, picoline, 1,8
-Diaza-bicyclo(5,4,Q)undecene-7, benzyldimethylamine, 2-(dimethylamino)methylphenol quaternary ammonium salt dodecyltrimethylammonium iodide, cetyltrimethylammonium chloride, benzyldimethyltetrabutylammonium chloride, stearyl Trimethylammonium chloride imidazoles 2-methylimidazole, 2-undecylimitasol, 2-ethylimidazole, 1-benzyl-2-methylimidazole, ■-cyanoethyl-2-undecylimidazole boron compound tetraphenylboron, tetraphenylborate, N-
Methylmorpholine tetraphenylborate In addition to the above raw materials, other additives may be added as necessary, such as inorganic fillers, antimony trioxide, flame retardants such as halogen compounds, pigments, coupling agents such as silane coupling agents, etc. can be used.
上記無機質充填剤としては、特に限定するものではなく
、−ｉに用いられる石英ガラス粉末、タルク、シリカ粉
末、アルミナ粉末等が適宜用いられる。The inorganic filler is not particularly limited, and quartz glass powder, talc, silica powder, alumina powder, etc. used in -i can be used as appropriate.
この発明に用いるエポキシ樹脂組成物は、例えばつぎの
ようにして製造することができる。すなわち、前記Ａ−
Ｃ成分と、必要に応じて上記各種の硬化促進剤およびそ
の他の添加剤を適宜配合し、この配合物をミキシングロ
ール機等の混練機にかけて加熱状態で混練して半硬化状
のエポキシ樹脂組成物を作製する。ついで、これを室温
に冷却したのち公知の手段によって粉砕し、必要に応じ
て打錠するという一連の工程により製造することができ
る。The epoxy resin composition used in this invention can be produced, for example, as follows. That is, the above A-
A semi-cured epoxy resin composition is obtained by appropriately blending component C, the various curing accelerators mentioned above, and other additives as necessary, and kneading this blend in a kneading machine such as a mixing roll machine under heating. Create. The product can then be produced through a series of steps of cooling it to room temperature, pulverizing it by known means, and, if necessary, tableting it.
このようなエポキシ樹脂組成物を用いての半導体素子の
封止は特に限定するものではなく、例えばトランスファ
ー成形等の公知のモールド方法により行うことができる
。Sealing of a semiconductor element using such an epoxy resin composition is not particularly limited, and can be performed, for example, by a known molding method such as transfer molding.
このようにして得られる半導体装置は、第１図に示すよ
うに、成形型のゲート部分４から型内に特定のマイカを
含むエポキシ樹脂組成物を流入する場合、上記マイカは
エポキシ樹脂組成物の流れ方向（矢印Ａで示す）に配向
する性質を有するため、クラック５ａの進行が抑制され
る。したがって、それぞれが特定の軟化点を有するノボ
ラック型エポキシ樹脂およびノボラック型フェノール樹
脂の作用と相俟って優れた耐半田クラック性を備えてい
る。図において、６は封止樹脂、７はリードフレーム、
８は半導体素子、９はボンディングワイヤー １１はグ
イボンドパッドである。このクラック５ａの進行が抑制
される状態を、第２図に模式的に示す。すなわち、封止
樹脂６中のマイカ１０の沿面距離が長いためクラック５
ａが発生してもその進行が抑制される。In the semiconductor device thus obtained, as shown in FIG. 1, when an epoxy resin composition containing a specific mica is poured into the mold from the gate portion 4 of the mold, the mica is added to the epoxy resin composition. Since it has the property of being oriented in the flow direction (indicated by arrow A), the progress of the cracks 5a is suppressed. Therefore, in combination with the effects of the novolac type epoxy resin and the novolac type phenol resin, each of which has a specific softening point, it has excellent solder crack resistance. In the figure, 6 is a sealing resin, 7 is a lead frame,
8 is a semiconductor element, 9 is a bonding wire, and 11 is a bond pad. FIG. 2 schematically shows a state in which the progress of the crack 5a is suppressed. In other words, the creepage distance of the mica 10 in the sealing resin 6 is long, so the crack 5
Even if a occurs, its progression is suppressed.
以上のように、この発明の半導体装置は、゛特定の軟化
点を有するノボラック型エポキシ樹脂と特定の軟化点を
有するノボラック型フェノール樹脂と、さらに特定のマ
イカを含む特殊なエポキシ樹脂組成物を用いて樹脂封止
されているため、半田実装における過酷な条件下におい
てもパッケージクラックを生じることがなく高い信顛性
を有するものである。As described above, the semiconductor device of the present invention uses a special epoxy resin composition containing a novolak epoxy resin having a specific softening point, a novolac phenol resin having a specific softening point, and a specific mica. Since the package is sealed with resin, the package does not crack even under severe solder mounting conditions and has high reliability.
〔実施例１〜２６、比較例１．２］
後記の第１表に示す原料を同表に示す割合で配合し、こ
の配合物を１２０℃の熱ロール機で３分間混練した。つ
いで、これを冷却したのち粉砕し目的とする粉末状のエ
ポキシ樹脂組成物を得た（
以
下
余
白
）
上記実施例および比較例で得られた粉末状のエポキシ樹
脂組成物を用い、シリコンチップからなる半導体素子を
トランスファー成形（成形条件：圧カフ０ｋｇ／ｃｉｆ
ｌ、温度１７５℃１時間２分）でモールドすることによ
り半導体装置を各１０個作製した。[Examples 1 to 26, Comparative Example 1.2] The raw materials shown in Table 1 below were blended in the proportions shown in the same table, and this blend was kneaded for 3 minutes with a hot roll machine at 120°C. Next, this was cooled and then crushed to obtain the desired powdered epoxy resin composition (see the margins below). Using the powdered epoxy resin compositions obtained in the above examples and comparative examples, a silicone chip was prepared. Transfer molding of semiconductor elements (molding conditions: pressure cuff 0 kg/cif
1 and a temperature of 175° C. for 1 hour and 2 minutes) to fabricate 10 semiconductor devices.
このようにして作製された半導体装置を用いて耐半田ク
ラック性試験を行いクシツクの生じた個数を調べた。そ
の結果を後記の第２表に示した。A solder crack resistance test was conducted using the semiconductor devices manufactured in this manner, and the number of chips in which cracks occurred was determined. The results are shown in Table 2 below.
なお、上記試験方法を下記に示す。The above test method is shown below.
（耐半田クラック性試験）
まず、半導体装置を８５℃×８５％ＲＨ下に一定時間放
置して取り出した後、２６０℃の半田浴に３０秒間浸漬
した。このような一連の工程を経たものについて、目視
によりクラック発生の有無を二周ぺた。(Solder Crack Resistance Test) First, a semiconductor device was left at 85° C. x 85% RH for a certain period of time, taken out, and then immersed in a 260° C. solder bath for 30 seconds. After going through this series of steps, we visually inspected the product twice to see if there were any cracks.
（以下余白）
第２表の結果から、比較例品はわずか吸湿時間１２時間
でＩＯ個中通半数にクラックが生じ、４８時間では全て
のものにクラックが生じている。(Margins below) From the results in Table 2, it can be seen that in the comparative example products, cracks appeared in half of the IO pieces after just 12 hours of moisture absorption, and cracks appeared on all of them after 48 hours.
それに比べて実施例品は４８時間放置しても殆どがクラ
ックを生じず、耐半田クラック性が向上していることが
わかる。In comparison, most of the example products did not develop cracks even after being left for 48 hours, indicating that the solder crack resistance was improved.
第１図はこの発明におけるクラック抑制状態の説明図、
第２図はこの封止樹脂中のクラック抑制状態を説明する
模式図、第３図は従来例のクラック発生状態を説明する
模式図である。
６・・・封止樹脂 １０・・・マイカFIG. 1 is an explanatory diagram of the crack suppressed state in this invention,
FIG. 2 is a schematic diagram illustrating a state in which cracks are suppressed in this sealing resin, and FIG. 3 is a schematic diagram illustrating a state in which cracks occur in a conventional example. 6... Sealing resin 10... Mica
Claims (2)
脂組成物を用いて半導体素子を封止してなる半導体装置
。 （Ａ）軟化点５０〜１３０℃のノボラック型エポキシ樹
脂。 （Ｂ）軟化点５０〜１３０℃のノボラック型フェノール
樹脂。 （Ｃ）平均粒径５〜４０μｍのマイカ。(1) A semiconductor device in which a semiconductor element is sealed using an epoxy resin composition containing the following components (A) to (C). (A) Novolac type epoxy resin with a softening point of 50 to 130°C. (B) Novolac type phenolic resin with a softening point of 50 to 130°C. (C) Mica with an average particle size of 5 to 40 μm.
用エポキシ樹脂組成物。 （Ａ）軟化点５０〜１３０℃のノボラック型エポキシ樹
脂。 （Ｂ）軟化点５０〜１３０℃のノボラック型フェノール
樹脂。 （Ｃ）平均粒径５〜４０μｍのマイカ。(2) An epoxy resin composition for semiconductor encapsulation containing the following components (A) to (C). (A) Novolac type epoxy resin with a softening point of 50 to 130°C. (B) Novolac type phenolic resin with a softening point of 50 to 130°C. (C) Mica with an average particle size of 5 to 40 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14333689A JPH036847A (en) | 1989-06-05 | 1989-06-05 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14333689A JPH036847A (en) | 1989-06-05 | 1989-06-05 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH036847A true JPH036847A (en) | 1991-01-14 |
Family
ID=15336415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14333689A Pending JPH036847A (en) | 1989-06-05 | 1989-06-05 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH036847A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5167427A (en) * | 1990-05-24 | 1992-12-01 | Takata Corporation | Air bag device having engagement portions to facilitate attachment of the cover to the retainer |
| US5201541A (en) * | 1991-06-19 | 1993-04-13 | General Motors Corporation | Occupant restraint module |
-
1989
- 1989-06-05 JP JP14333689A patent/JPH036847A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5167427A (en) * | 1990-05-24 | 1992-12-01 | Takata Corporation | Air bag device having engagement portions to facilitate attachment of the cover to the retainer |
| US5201541A (en) * | 1991-06-19 | 1993-04-13 | General Motors Corporation | Occupant restraint module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH036847A (en) | Semiconductor device | |
| JPH02305454A (en) | Semiconductor device | |
| JPH0567701A (en) | Semiconductor device | |
| JPH0438856A (en) | Semiconductor device | |
| JP2846748B2 (en) | Semiconductor device | |
| JP3176502B2 (en) | Semiconductor device and epoxy resin composition for semiconductor encapsulation used therein | |
| JP3844098B2 (en) | Epoxy resin composition and semiconductor device | |
| JPH04188855A (en) | Semiconductor device | |
| JPS62100523A (en) | Epoxy resin composition for sealing semiconductor element | |
| JPH1192631A (en) | Epoxy resin composition and semiconductor device | |
| JP3014856B2 (en) | Semiconductor device | |
| JPS62115849A (en) | Resin-sealed semiconductor device | |
| JPH02168654A (en) | Semiconductor device | |
| JP2923386B2 (en) | Semiconductor device | |
| JPS61278154A (en) | Semiconductor device | |
| JPH11100491A (en) | Epoxy resin composition and semiconductor device | |
| JPH04155939A (en) | Semiconductor device | |
| JPH0567704A (en) | Semiconductor device | |
| JPH1192630A (en) | Epoxy resin composition and semiconductor device | |
| JP2846749B2 (en) | Semiconductor device | |
| JPS61278147A (en) | Semiconductor device | |
| JPH0669379A (en) | Semiconductor device | |
| JPH11100490A (en) | Epoxy resin composition and semiconductor device | |
| JPH0520448B2 (en) | ||
| JPS6263452A (en) | Semiconductor device |