JPH04188855A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH04188855A JPH04188855A JP31957090A JP31957090A JPH04188855A JP H04188855 A JPH04188855 A JP H04188855A JP 31957090 A JP31957090 A JP 31957090A JP 31957090 A JP31957090 A JP 31957090A JP H04188855 A JPH04188855 A JP H04188855A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- particle size
- average particle
- semiconductor device
- silica powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000000843 powder Substances 0.000 claims abstract description 36
- 239000003822 epoxy resin Substances 0.000 claims abstract description 33
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 33
- 239000000203 mixture Substances 0.000 claims abstract description 20
- 239000011256 inorganic filler Substances 0.000 claims abstract description 19
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 19
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims description 25
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000012360 testing method Methods 0.000 abstract description 18
- 229910000679 solder Inorganic materials 0.000 abstract description 15
- 238000002156 mixing Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 238000007789 sealing Methods 0.000 description 11
- 229920003986 novolac Polymers 0.000 description 9
- 238000005452 bending Methods 0.000 description 7
- 238000007654 immersion Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 150000004677 hydrates Chemical class 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000007656 fracture toughness test Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、信顛性に優れた半導体装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device with excellent reliability.
〔従来の技術］
トランジスタ、ｒｃ、ＬＳＩ等の半導体素子は、通常、
セラミックパッケージもしくはプラスチックパッケージ
等により封止され、半導体装１化されている。上記セラ
ミックパッケージは、構成材料そのものが耐熱性を有し
、耐浸透性にも優れているため、温度、’ｌＷ度の変化
二二対しで強く、しかち中空パッケージのたぬ機械的強
度も高く信頼性の高い封止が可能である。しかし、構成
材料が比較的高価なものであることと、量産性に劣る欠
点があるため、最近では上記プラスチックパラｌ）−一
ジを用いた樹脂封止が玉流になってきている。[Prior Art] Semiconductor elements such as transistors, RCs, and LSIs usually
It is sealed with a ceramic package, a plastic package, etc., and is integrated into a semiconductor package. The ceramic package mentioned above has heat resistance and excellent penetration resistance, so it is strong against changes in temperature and degrees, and has high mechanical strength compared to hollow packages. Highly reliable sealing is possible. However, since the constituent materials are relatively expensive and the mass productivity is poor, resin sealing using the above-mentioned plastic para l)-1 has recently become popular.
この種の樹脂封止には、従来からエポキシ樹脂組成物が
使用されており、良好な成績を収めている。しかしなが
ら、半導体分野の技術革新によって集積度の向上ととも
に素子サイズの大形化、配線の微細化が進み、パッケー
ジが小形化、薄形化する傾向にあり、これに伴って封止
材料に対してより以上の信頼性（得られる半導体装置装
置の内部応力、耐湿信顛性、耐熱衝撃信鎖性、耐熱信顧
性等）の向上が要望されている。特に、近年、チップサ
イズはますます大形化する傾向にあり、半導体封止樹脂
の性能を評価する加速試験である熱サイクル試験（Ｔ
ＣＴテスト）に対するより以上の性能が要求されている
。また、半導体パッケージの実装方法として表面実装が
主流となってきており このため、半導体パッケージ外
−ジした状態ごこδいて半田槽に浸漬してもパッケージ
にクラ゛ンクやふくれが発生しないという特性も要求さ
れている。Epoxy resin compositions have conventionally been used for this type of resin sealing, and have achieved good results. However, due to technological innovation in the semiconductor field, the degree of integration has increased, element sizes have become larger, and interconnects have become finer. As a result, packages are becoming smaller and thinner. There is a demand for further improvement in reliability (internal stress, moisture resistance reliability, thermal shock resistance reliability, heat resistance reliability, etc. of the resulting semiconductor device). In particular, in recent years, chip sizes have tended to become larger and larger, and the thermal cycle test (T
(CT test) is required. In addition, surface mounting has become the mainstream method for mounting semiconductor packages, and as a result, the package has the characteristic of not causing cracks or blisters even if the semiconductor package is left outside and immersed in a solder bath. is also required.
〔発明が解決しようとする課題］
このような要求に関して、従来からＴＣＴテストによっ
て評価される各特性の向上のために、例えばゴムを用い
てエポキシ樹脂を変性して熱応力を低減させることが検
討されている。また、半田浸漬時の耐クラツク性の向上
のために、リードフレームと封止樹脂との密着性を向上
させること等が検討されているが、両者とも未だ充分な
効果は得られていないのが実情である。[Problems to be Solved by the Invention] Regarding these demands, in order to improve various properties conventionally evaluated by TCT tests, it has been considered to reduce thermal stress by modifying epoxy resin using rubber, for example. has been done. In addition, in order to improve crack resistance during solder immersion, efforts are being made to improve the adhesion between the lead frame and the encapsulating resin, but neither has yet achieved sufficient effects. This is the reality.
このように、これまでの封止用エポキシ樹脂組成物では
、ＴＣＴテストの結果や半田浸漬時の耐クラツク性の両
特性が満足のいくものではない。As described above, conventional epoxy resin compositions for sealing are not satisfactory in both the TCT test results and crack resistance during solder immersion.
このため、上記技術革新による素子サイズの大形化や表
面実装化に対応できるように、上記両特性の向上が強く
望まれている。また、マイクロコンピュータ−等に用い
られる演算用の半導体素子を樹脂封止する場合、上記半
導体素子の駆動による発熱をパッケージ外に速やかに放
熱する必要か５、高熱伝導性に対しても今以上の高い要
求がなされるようになっている。Therefore, it is strongly desired to improve both of the above characteristics so as to be able to cope with the increase in element size and surface mounting due to the above-mentioned technological innovations. In addition, when semiconductor elements for calculations used in microcomputers etc. are sealed with resin, it is necessary to quickly dissipate the heat generated by driving the semiconductor elements outside the package. High demands are being made.
この発明は、このような事情に鑑みなされたもので、Ｔ
ＣＴテストによって評価される各特性。This invention was made in view of these circumstances, and T.
Each characteristic evaluated by CT test.
半田浸漬時の耐クラツク性および高熱伝導性の全てに優
れた半導体装置の提供をその目的とする。The purpose of the present invention is to provide a semiconductor device that has excellent crack resistance when immersed in solder and high thermal conductivity.
：課題を解決するための手段］
上記の目的を達成するため、この発明の半導体装置は、
下記の（Ａ）〜（Ｃ）成分を含有するエポキシ樹脂組成
物を用いて半導体素子を封止するという構成をとる。: Means for Solving the Problem] In order to achieve the above object, the semiconductor device of the present invention has the following features:
The structure is such that a semiconductor element is sealed using an epoxy resin composition containing the following components (A) to (C).
（Ａ）エポキシ樹脂。(A) Epoxy resin.
（Ｂ）硬化剤。(B) Hardening agent.
（Ｃ）平均粒径が２０〜７０μｍのシリカ粉末と、平均
粒径が０．１〜１０μｍのアルミナ粉末を含む無機質充
填剤。(C) An inorganic filler containing silica powder with an average particle size of 20 to 70 μm and alumina powder with an average particle size of 0.1 to 10 μm.
（作用）
すなわち、本発明者らは、ＴＣＴテストによって計画さ
れる各特性、半田浸漬時の耐クラツク性および高熱伝導
性に優れた封１１：１１８１脂を得るために一連の研究
を重ねた。その結果、無機質充填剤として、特定の平均
粒径を有するシリカ粉末とアルミナ粉末、すなわち平均
粒径の大きなシリカ粉末と平均粒径の小さなアルミナ粉
末とを組み合わせて用いると、ＴＣＴテストによって評
価される各特性、半田浸漬時の耐クラツク性、さらに高
熱伝導性に優れた封止樹脂が得られることを見出しこの
発明に到達した。(Function) That is, the present inventors conducted a series of studies in order to obtain a sealing 11:1181 resin that has excellent properties as determined by the TCT test, crack resistance during solder immersion, and high thermal conductivity. As a result, when using a combination of silica powder and alumina powder with a specific average particle size, that is, silica powder with a large average particle size and alumina powder with a small average particle size, as an inorganic filler, it is evaluated by the TCT test. The inventors have discovered that it is possible to obtain a sealing resin that has excellent properties, crack resistance when immersed in solder, and high thermal conductivity, and has thus arrived at the present invention.
つぎに、この発明の詳細な説明する。Next, this invention will be explained in detail.
この発明に用いられるエポキシ樹脂組成物は、エポキシ
樹脂（Ａ成分）と、硬化剤（Ｂ成分）と、特殊な無機質
充填剤（Ｃ成分）とを用いて得られるものであり、通常
、粉末状もしくはそれを打錠したタブレット状になって
いる。The epoxy resin composition used in this invention is obtained using an epoxy resin (component A), a curing agent (component B), and a special inorganic filler (component C), and is usually in powder form. Or it is compressed into tablet form.
上記エポキシ樹脂（Ａ成分）としては、特に限定するも
のではなく、クレゾールノボラック型。The epoxy resin (component A) is not particularly limited, and may be a cresol novolac type.
フェノールノボラック型やビスフェノールＡ型等、従来
から半導体装置の樹脂封止に用いられる各種エポキノ樹
脂があげられる。こ孔らエポキシ樹脂のなかでも融点が
室温を超えており、室温下では固形状もしくは高粘度の
溶液状を呈するものを用いる＝とが好結果をもたらす。Various epochino resins, such as phenol novolac type and bisphenol A type, which have been conventionally used for resin encapsulation of semiconductor devices, can be mentioned. Among epoxy resins, it is best to use one that has a melting point above room temperature and is in the form of a solid or highly viscous solution at room temperature.
そして、ノボラック型エポキシ樹脂とじては、通常、エ
ポキシ当量１６０〜２５０．軟化点５０〜１３０ ’Ｃ
のものが用いられ、タレゾールノボラック型エポキシ樹
脂としては、エポキシ当量１８０〜２１０．軟化点６０
〜１１０°Ｃのものが一般に用いられる。As for novolac type epoxy resin, the epoxy equivalent is usually 160 to 250. Softening point 50-130'C
The Talesol novolac type epoxy resin has an epoxy equivalent of 180 to 210. Softening point 60
~110°C is generally used.
上記エポキシ樹脂（Ａ成分）とともに用いられる硬化剤
（Ｂ成分）としては、フェノールノボラック、タレゾー
ルノボラック等が好適に用いられる。これらノボラック
樹脂は、軟化点が５０〜１１Ｏ°Ｃで、水酸基当量が７
０〜１５０のものを用いることが好ましい。特に、上記
ノボラック樹脂のなかでもクレゾールノボラックを用い
ることが好結果をもたらす。As the curing agent (component B) used together with the epoxy resin (component A), phenol novolac, talesol novolac, etc. are preferably used. These novolac resins have a softening point of 50 to 110°C and a hydroxyl equivalent of 7.
It is preferable to use 0 to 150. Particularly, among the novolac resins mentioned above, use of cresol novolac brings about good results.
上記エポキシ樹脂（Ａ成分）と硬化剤（Ｂ成分）の配合
割合は、エポキシ樹脂中のエポキシ基１当量当たり硬化
剤中の水酸基が０．８〜１．２当量となるようＳこ配合
することか好ましい。The mixing ratio of the above epoxy resin (component A) and curing agent (component B) should be such that the amount of hydroxyl groups in the curing agent is 0.8 to 1.2 equivalents per equivalent of epoxy groups in the epoxy resin. Or preferable.
上記エポキシ樹脂（Ａ成分）′８よび硬化剤（Ｂ成分）
とともに用いられる特殊な無機質充填剤（Ｃ成分）とし
ては、平均粒径２０〜７０μｍのシリカ粉末と平均粒径
０．１〜１０μｍのアルミナ粉末を用い、これらを組み
合わせて用いる。上記シリカ粉末としては、球状物およ
び破砕状物があげられ、それぞれ単独でもしくは併せて
用いられる。上記アルミナ粉末としては、無水物および
水和物があげられ、これら無水物、水和物は単独で用い
てもよいし併用してもよい。エポキシ樹脂組成物のＴＣ
Ｔテストや半田クラック性における材料物性として、通
常、破壊靭性値と曲げ強度が用いられている。上記破壊
靭性値は、クラックを生ずる脆性材料の破壊に対する粘
り強さを示すものであり、上記曲げ強度はクラックの起
こり易さを示すものである。本発明者は、無機質充填剤
の粒子サイズにおける両者の物性への影響を中心に研究
したところ、粒子サイズが大きいほど破壊靭性値は高く
、粒子サイズが小さいほど曲げ強度が高くなるというこ
とを突き止めた。特に、破砕フ１′ラーの場合、粒子サ
イズが大きいと１粒子自身の破壊のため封止樹脂の曲げ
強度が低下してしまう。The above epoxy resin (component A)'8 and curing agent (component B)
As the special inorganic filler (component C) used together, silica powder with an average particle size of 20 to 70 μm and alumina powder with an average particle size of 0.1 to 10 μm are used, and these are used in combination. Examples of the above-mentioned silica powder include spherical and crushed silica powders, each of which may be used alone or in combination. Examples of the alumina powder include anhydrides and hydrates, and these anhydrides and hydrates may be used alone or in combination. TC of epoxy resin composition
Fracture toughness and bending strength are usually used as material properties in the T test and solder crack resistance. The fracture toughness value indicates the tenacity of a brittle material against fracture that causes cracks, and the bending strength indicates the ease with which cracks occur. The present inventor conducted research focusing on the influence of the particle size of the inorganic filler on both physical properties, and found that the larger the particle size, the higher the fracture toughness value, and the smaller the particle size, the higher the bending strength. Ta. In particular, in the case of crushing filler 1', if the particle size is large, the bending strength of the sealing resin will decrease due to the destruction of each particle itself.
そこで、本発明者は、破壊靭性値と曲げ強度の双方を向
上させるために、無機質充填剤として、粒子サイズの大
きなシリカ粉末と、粒子サイズか小さくしかも粒子自身
が破壊しにくいアルミナ粉末を選択し、これらを組み合
わせて用いることを着想し実験を行った。その結果、上
記の構成によって、ＴＣＴテストや半田実装時のパッケ
ージクラックの発生が抑制され、またパッケージ内に微
少クラックが発生しても上記シリカ粉末の含有によりそ
のクラックの進行が抑制されるという効果が得られるよ
うになった。Therefore, in order to improve both fracture toughness and bending strength, the inventor selected silica powder with a large particle size and alumina powder, which has a small particle size and is difficult to break itself, as inorganic fillers. , we came up with the idea of using these in combination and conducted an experiment. As a result, the above structure suppresses the occurrence of package cracks during TCT tests and solder mounting, and even if minute cracks occur within the package, the progress of the cracks is suppressed by the inclusion of the silica powder. is now available.
上記シリカ粉末（Ｘ）とアルミナ粉末（Ｙ）の相互の混
合割合は、Ｘ＋Ｙ＝１００を基準とする重量比で、χ／
Ｙ＝８０／２０〜４０／６０の割合に設定するのが好ま
しい。すなわち、Ｘが８０を上回る（Ｙが２０を下回る
）と、高熱伝導性の向上効果が低下し、逆にＸが４０を
下回る（Ｙが６０を上回る）と、破壊靭性か低下すると
いう傾向がみられるからである。上記特殊な無機質充填
剤（Ｃ成分）の含有量は、エポキシ樹脂組成物全体の５
０重量％（以下「％」と略す）以上に設定するのが好ま
しい。特に好ましくは７０％以上であり、さらに好まし
くは８０％以上である。すなわち、無機質充填剤の含有
量が５０％を下回ると、ＴＣＴテストによる各特性や半
田浸漬時の耐クラツク性および高熱伝導性の向上効果が
大幅に低下する傾向がみられるからである。また、上記
特殊な無機質充填剤（Ｃ成分）の一部に代えて、通常用
いられる無機質充填剤（例えばタルク、石英ガラス等）
を用いてもよい。その使用量の上限は上記特殊な無機質
充填剤の６０％までである。The mutual mixing ratio of the silica powder (X) and alumina powder (Y) is a weight ratio based on X+Y=100, χ/
It is preferable to set the ratio of Y=80/20 to 40/60. In other words, when X exceeds 80 (Y falls below 20), the effect of improving high thermal conductivity decreases, and conversely, when X falls below 40 (Y exceeds 60), the fracture toughness tends to decrease. Because it can be seen. The content of the above special inorganic filler (component C) is 5% of the total epoxy resin composition.
It is preferable to set it to 0% by weight (hereinafter abbreviated as "%") or more. Particularly preferably, it is 70% or more, and even more preferably 80% or more. That is, if the content of the inorganic filler is less than 50%, there is a tendency for the effects of improving various properties determined by the TCT test, crack resistance during solder immersion, and high thermal conductivity to be significantly reduced. In addition, in place of a part of the above-mentioned special inorganic filler (component C), commonly used inorganic fillers (for example, talc, quartz glass, etc.) can be used.
may also be used. The upper limit of the amount used is up to 60% of the above-mentioned special inorganic filler.
なお、この発明に用いられるエポキシ樹脂組成物には、
上記Ａ−Ｃ成分以外に必要に応して、硬化促進剤として
の従来公知の三級アミン、四級アンモニウム塩、イミダ
ゾール類およびホウ素化合物を単独でもしくは併せて用
いることができる。The epoxy resin composition used in this invention includes:
In addition to the components A to C, conventionally known curing accelerators such as tertiary amines, quaternary ammonium salts, imidazoles, and boron compounds can be used alone or in combination, if necessary.
さらに、三酸化アンチモン、リン系化合物等の難燃剤や
顔料、シランカツブＩｊジグ剤等のカップ１．１ング剤
を用いることもできる。Furthermore, flame retardants such as antimony trioxide and phosphorus compounds, pigments, and cupping agents such as Silan Katsub Ij jig agents can also be used.
この発明に用いられるエポキシ樹脂組成物は、例えばつ
ぎのようにして製造することができる。The epoxy resin composition used in this invention can be produced, for example, as follows.
すなわち、まずエボキソ樹脂（Ａ成分）、硬化剤（Ｂ成
分）、無機質充填剤（Ｃ成分）および必要；こ応じて硬
化促進剤、難燃剤、顔料およびカップリング剤を所定の
割合で配合する。ついで、これら配合物をミキシングロ
ール機等の混練機にかけ加熱状態で混練して溶融混合す
る。そして、これを室温に冷却した後、公知の手段によ
って粉砕し、必要に応じて打錠するという一連の工程に
よって目的とするエポキシ樹脂組成物を製造することが
できる。That is, first, an epoxy resin (component A), a curing agent (component B), an inorganic filler (component C), and, if necessary, a curing accelerator, a flame retardant, a pigment, and a coupling agent are blended in predetermined proportions. Next, these blends are kneaded in a heated state using a kneading machine such as a mixing roll machine to melt and mix. Then, the desired epoxy resin composition can be manufactured through a series of steps of cooling this to room temperature, pulverizing it by known means, and tableting if necessary.
このようなエポキシ樹脂組成物を用いての半導体素子の
封止は特に限定するものではなく、通常のトランスファ
ー成形等の公知のモールド法により行うことができる。Sealing of a semiconductor element using such an epoxy resin composition is not particularly limited, and can be performed by a known molding method such as ordinary transfer molding.
このようにして得られる半導体装置は、エポキシ樹脂組
成物中に含まれる平均粒径の大きなシリカ粉末と平均粒
径の小さなアルミナ粉末とを含り無機質充填剤（Ｃ成分
）の作用ニこより、Ｔ ＣＴ −ｒ−ストで評価される
特性が向上し、また半田浸漬時における優れた耐クラツ
ク性を有している。さらに、高い高熱伝導性を備えてい
る。The semiconductor device thus obtained contains silica powder with a large average particle size and alumina powder with a small average particle size contained in the epoxy resin composition, and due to the action of the inorganic filler (component C), T The characteristics evaluated by CT-r-st are improved, and it also has excellent crack resistance when immersed in solder. Furthermore, it has high thermal conductivity.
（発明の効果）
以上のように、この発明の半導体装置は、特定の平均粒
径を有するシリカ粉末とアルミナ粉末とを含む特殊な無
機質充填剤（Ｃ成分）を含有する特殊なエポキシ樹脂組
成物を用いて樹脂封止されているため、ＴＣＴテストク
こよって評価される特性が向上し長寿命になる。また、
吸湿後、半田浸漬時においてもパッケージクラックが生
しない。(Effects of the Invention) As described above, the semiconductor device of the present invention uses a special epoxy resin composition containing a special inorganic filler (component C) containing silica powder and alumina powder having a specific average particle size. Since it is sealed with resin using TCT test, the characteristics evaluated by TCT test are improved and the life is extended. Also,
After absorbing moisture, no package cracks occur even when immersed in solder.
そして、特に上記特殊なエポキシ樹脂組成物による封正
により、８ビン以上、特に１６ピン以上もしくは半導体
素子の長辺が４１ｍ１以上の大形の半導体装置において
、上記のような高信顧性が得られるのであり、これが大
きな特徴である。そのうえ、無機質充填剤にアルミナ粉
末を用いているため、封止樹脂の熱伝導性が向上し半導
体素子からの発熱かパッケージ外に速やかに放熱するよ
う二こなり、例え−ボマイクロコンピューター↓こ用い
る演算用の半導体素子の封正に充分対応できるようにな
る。In particular, by sealing with the above-mentioned special epoxy resin composition, the above-mentioned high reliability can be achieved in large semiconductor devices with 8 bottles or more, especially 16 pins or more, or semiconductor devices with long sides of 41 m1 or more. This is a major feature. Furthermore, since alumina powder is used as the inorganic filler, the thermal conductivity of the sealing resin is improved, and heat is quickly dissipated from the semiconductor element to the outside of the package. It becomes possible to fully cope with the sealing of semiconductor elements for calculations.
つぎに、実施例２こついて比較例と併せて説明する。Next, Example 2 will be explained together with a comparative example.
〔実施例１〜１０、比較例１〜５〕
下記の第り表に示す各成分を、同表に示す割合で配合し
、これをミキシングロールＩ！（ロール温度１００°Ｃ
）で３分間溶融混練を行い、冷却固化後粉砕を行って目
的とする微粉末状のエポキシ樹脂組成物を得た。[Examples 1 to 10, Comparative Examples 1 to 5] Each component shown in the table below was blended in the proportion shown in the table, and this was mixed into a mixing roll I! (Roll temperature 100°C
) for 3 minutes, cooled and solidified, and then pulverized to obtain the desired epoxy resin composition in the form of fine powder.
（以下余白）
以上の実施例および比較例によって得られた微粉末状エ
ボキン樹脂組成物を用い、半導体素子をトランスファー
成形（条件：１７５°〔Ｘ２分、１７５°〔Ｘ５時間後
硬化）することにより半導体装置を得た。このバラケー
ンは８０ピンＱＦＰ（クワッドフラットパッケージ、サ
イズ：２０Ｘ１４Ｘ２１１１１１１）であり、ダイパッ
ドサイズは８×８ｍである。(Left below) By using the finely powdered Evoquin resin composition obtained in the above Examples and Comparative Examples, a semiconductor element was transfer molded (conditions: 175° [X2 minutes, 175° [X5 hours post-curing)]. A semiconductor device was obtained. This rose cane is an 80-pin QFP (quad flat package, size: 20 x 14 x 2111111), and the die pad size is 8 x 8 m.
このようにして得られた半導体装置について、＝５０°
Ｃ１５分〜１５０°Ｃ１５分のサイクル数を変えてＴＣ
Ｔテストを行いパッケージクラックの発生数を測定した
。また、８５’Ｃ／８５％ＲＨの恒温槽中に吸湿時間を
変え放置する吸湿条件で、温度２６０°Ｃで１０秒間半
田浴浸漬する試験を行った。また、曲げ強度をＪ ＩＳ
−に−６９１１に基づいて測定し、さらにＡＳＴＭＥ３
９９−８１に基づいて破壊靭性試験を行い破壊靭性値を
求めた。そして、樹脂硬化物にヒーター線を接触させ一
定電流を流すことにより熱伝導率を測定した。For the semiconductor device obtained in this way, =50°
TC by changing the number of cycles from C15 minutes to 150°C15 minutes
A T test was conducted to measure the number of package cracks. In addition, a test was conducted in which the samples were immersed in a solder bath for 10 seconds at a temperature of 260° C. under a moisture absorption condition in which the samples were left in a constant temperature bath at 85'C/85% RH for different moisture absorption times. In addition, the bending strength is JIS
- Measured based on -6911 and further ASTM E3
A fracture toughness test was conducted based on 99-81 to determine the fracture toughness value. Thermal conductivity was then measured by bringing a heater wire into contact with the cured resin and passing a constant current through it.
これらの結果を下記の第２表に示した。These results are shown in Table 2 below.
第２表の結果から、実施別品は、ＴＣＴテストおよび半
田浸漬時の耐クラツク性テストの結果か良好で、曲げ強
度も高く、しかも熱伝導性も高い。これらのことから、
実施別品は比較別品に比へて信転性が著しく向上してい
ることがわかる。From the results in Table 2, the tested products had good results in the TCT test and the crack resistance test during solder immersion, had high bending strength, and had high thermal conductivity. from these things,
It can be seen that the reliability of the tested product is significantly improved compared to the comparative product.
特許出願人 日東電工株式会社 代理人 弁理士 西 藤 征 彦Patent applicant: Nitto Denko Corporation Agent: Patent Attorney Yukihiko Nishifuji
Claims (1)
脂組成物を用いて半導体素子を封止してなる半導体装置
。 （Ａ）エポキシ樹脂。 （Ｂ）硬化剤。 （Ｃ）平均粒径が２０〜７０μｍのシリカ粉末と、平均
粒径が０．１〜１０μｍのアルミ ナ粉末を含む無機質充填剤。 （２）平均粒径２０〜７０μｍのシリカ粉末（Ｘ）と平
均粒径０．１〜１０μｍのアルミナ粉末（Ｙ）との相互
の割合〔Ｘ／（Ｘ＋Ｙ）〕が８０〜４０重量％で、〔Ｙ
／（Ｘ＋Ｙ）〕が２０〜６０重量％に設定されている請
求項（１）記載の半導体装置。（３）下記の（Ａ）〜（
Ｃ）成分を含有する半導体封止用エポキシ樹脂組成物。 （Ａ）エポキシ樹脂。 （Ｂ）硬化剤。 （Ｃ）平均粒径が２０〜７０μｍのシリカ粉末と、平均
粒径が０．１〜１０μｍのアルミ ナ粉末を含む無機質充填剤。 （４）平均粒径２０〜７０μｍのシリカ粉末（Ｘ）と平
均粒径０．１〜１０μｍのアルミナ粉末（Ｙ）との相互
の割合〔Ｘ／（Ｘ＋Ｙ）〕が８０〜４０重量％で、〔Ｙ
／（Ｘ＋Ｙ）〕が２０〜６０重量％に設定されている請
求項（３）記載の半導体封止用エポキシ樹脂組成物。[Scope of Claims] (1) A semiconductor device in which a semiconductor element is sealed using an epoxy resin composition containing the following components (A) to (C). (A) Epoxy resin. (B) Hardening agent. (C) An inorganic filler containing silica powder with an average particle size of 20 to 70 μm and alumina powder with an average particle size of 0.1 to 10 μm. (2) The mutual ratio [X/(X+Y)] of silica powder (X) with an average particle size of 20 to 70 μm and alumina powder (Y) with an average particle size of 0.1 to 10 μm is 80 to 40% by weight, [Y
/(X+Y)] is set to 20 to 60% by weight. (3) The following (A) to (
C) An epoxy resin composition for semiconductor encapsulation containing component. (A) Epoxy resin. (B) Hardening agent. (C) An inorganic filler containing silica powder with an average particle size of 20 to 70 μm and alumina powder with an average particle size of 0.1 to 10 μm. (4) The mutual ratio [X/(X+Y)] of silica powder (X) with an average particle size of 20 to 70 μm and alumina powder (Y) with an average particle size of 0.1 to 10 μm is 80 to 40% by weight, [Y
/(X+Y)] is set to 20 to 60% by weight. The epoxy resin composition for semiconductor encapsulation according to claim 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31957090A JPH04188855A (en) | 1990-11-22 | 1990-11-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31957090A JPH04188855A (en) | 1990-11-22 | 1990-11-22 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04188855A true JPH04188855A (en) | 1992-07-07 |
Family
ID=18111742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31957090A Pending JPH04188855A (en) | 1990-11-22 | 1990-11-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04188855A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997003129A1 (en) * | 1995-07-10 | 1997-01-30 | Toray Industries, Inc. | Epoxy resin composition |
| JP2002338788A (en) * | 2001-05-16 | 2002-11-27 | Mitsui Chemicals Inc | Epoxy resin composition and hollow package housing semiconductor element using the composition |
| WO2006011662A1 (en) * | 2004-07-29 | 2006-02-02 | Sumitomo Bakelite Co., Ltd. | Epoxy resin composition and semiconductor device |
-
1990
- 1990-11-22 JP JP31957090A patent/JPH04188855A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997003129A1 (en) * | 1995-07-10 | 1997-01-30 | Toray Industries, Inc. | Epoxy resin composition |
| US5854316A (en) * | 1995-07-10 | 1998-12-29 | Toray Industries, Inc. | Epoxy resin composition |
| KR100388141B1 (en) * | 1995-07-10 | 2003-10-17 | 도레이 가부시끼가이샤 | Epoxy resin composition |
| JP2002338788A (en) * | 2001-05-16 | 2002-11-27 | Mitsui Chemicals Inc | Epoxy resin composition and hollow package housing semiconductor element using the composition |
| WO2006011662A1 (en) * | 2004-07-29 | 2006-02-02 | Sumitomo Bakelite Co., Ltd. | Epoxy resin composition and semiconductor device |
| JPWO2006011662A1 (en) * | 2004-07-29 | 2008-05-01 | 住友ベークライト株式会社 | Epoxy resin composition and semiconductor device |
| US8084520B2 (en) | 2004-07-29 | 2011-12-27 | Sumitomo Bakelite Co., Ltd. | Epoxy resin composition and semiconductor device |
| JP5019251B2 (en) * | 2004-07-29 | 2012-09-05 | 住友ベークライト株式会社 | Epoxy resin composition and semiconductor device |
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