JPH0366760B2 - - Google Patents

Info

Publication number
JPH0366760B2
JPH0366760B2 JP62109930A JP10993087A JPH0366760B2 JP H0366760 B2 JPH0366760 B2 JP H0366760B2 JP 62109930 A JP62109930 A JP 62109930A JP 10993087 A JP10993087 A JP 10993087A JP H0366760 B2 JPH0366760 B2 JP H0366760B2
Authority
JP
Japan
Prior art keywords
line
address
semiconductor memory
redundant
program
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62109930A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62279600A (ja
Inventor
Rimu Hyunnkyu
Do Jeeyon
Meta Rasutamu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPS62279600A publication Critical patent/JPS62279600A/ja
Publication of JPH0366760B2 publication Critical patent/JPH0366760B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2229/00—Indexing scheme relating to checking stores for correct operation, subsequent repair or testing stores during standby or offline operation
    • G11C2229/70—Indexing scheme relating to G11C29/70, for implementation aspects of redundancy repair

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
JP62109930A 1986-05-07 1987-05-07 半導体メモリ装置用の冗長回路 Granted JPS62279600A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1986P3537 1986-05-07
KR1019860003537A KR890001847B1 (ko) 1986-05-07 1986-05-07 반도체 메모리 장치의 리던던시 회로

Publications (2)

Publication Number Publication Date
JPS62279600A JPS62279600A (ja) 1987-12-04
JPH0366760B2 true JPH0366760B2 (OSRAM) 1991-10-18

Family

ID=19249818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62109930A Granted JPS62279600A (ja) 1986-05-07 1987-05-07 半導体メモリ装置用の冗長回路

Country Status (8)

Country Link
US (1) US4794568A (OSRAM)
JP (1) JPS62279600A (OSRAM)
KR (1) KR890001847B1 (OSRAM)
DE (1) DE3714980A1 (OSRAM)
FR (1) FR2598549B1 (OSRAM)
GB (1) GB2191614B (OSRAM)
HK (1) HK18293A (OSRAM)
SG (1) SG55491G (OSRAM)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5535328A (en) * 1989-04-13 1996-07-09 Sandisk Corporation Non-volatile memory system card with flash erasable sectors of EEprom cells including a mechanism for substituting defective cells
US7190617B1 (en) 1989-04-13 2007-03-13 Sandisk Corporation Flash EEprom system
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
EP0935255A2 (en) 1989-04-13 1999-08-11 SanDisk Corporation Flash EEPROM system
DE69124285T2 (de) * 1990-05-18 1997-08-14 Fujitsu Ltd Datenverarbeitungssystem mit einem Eingangs-/Ausgangswegetrennmechanismus und Verfahren zur Steuerung des Datenverarbeitungssystems
US5276834A (en) * 1990-12-04 1994-01-04 Micron Technology, Inc. Spare memory arrangement
KR940006922B1 (ko) * 1991-07-11 1994-07-29 금성일렉트론 주식회사 반도체 메모리의 리던던시 회로
US6801979B1 (en) 1995-07-31 2004-10-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6757800B1 (en) 1995-07-31 2004-06-29 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6081878A (en) 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US5828599A (en) * 1996-08-06 1998-10-27 Simtek Corporation Memory with electrically erasable and programmable redundancy
US6411546B1 (en) 1997-03-31 2002-06-25 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
KR100228533B1 (ko) * 1997-06-23 1999-11-01 윤종용 반도체 집적회로의 용단가능한 퓨즈 및 그 제조방법
AU1729100A (en) 1998-11-17 2000-06-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6407944B1 (en) 1998-12-29 2002-06-18 Samsung Electronics Co., Ltd. Method for protecting an over-erasure of redundant memory cells during test for high-density nonvolatile memory semiconductor devices
US8072834B2 (en) * 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346459A (en) * 1980-06-30 1982-08-24 Inmos Corporation Redundancy scheme for an MOS memory
JPS57130298A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor integrated circuit memory and relieving method for its fault
EP0074305A3 (en) * 1981-08-24 1985-08-14 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Fault isolating memory decoder
US4422161A (en) * 1981-10-08 1983-12-20 Rca Corporation Memory array with redundant elements
US4538247A (en) * 1983-01-14 1985-08-27 Fairchild Research Center Redundant rows in integrated circuit memories

Also Published As

Publication number Publication date
JPS62279600A (ja) 1987-12-04
GB2191614B (en) 1990-06-06
GB8710866D0 (en) 1987-06-10
KR870011693A (ko) 1987-12-26
FR2598549A1 (fr) 1987-11-13
DE3714980A1 (de) 1987-11-12
KR890001847B1 (ko) 1989-05-25
FR2598549B1 (fr) 1991-01-04
DE3714980C2 (OSRAM) 1990-05-03
HK18293A (en) 1993-03-12
GB2191614A (en) 1987-12-16
SG55491G (en) 1991-08-23
US4794568A (en) 1988-12-27

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