JPH0365558A - Dielectric ceramic composition - Google Patents
Dielectric ceramic compositionInfo
- Publication number
- JPH0365558A JPH0365558A JP1199048A JP19904889A JPH0365558A JP H0365558 A JPH0365558 A JP H0365558A JP 1199048 A JP1199048 A JP 1199048A JP 19904889 A JP19904889 A JP 19904889A JP H0365558 A JPH0365558 A JP H0365558A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- mol
- ceramic composition
- dielectric ceramic
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 24
- 239000000919 ceramic Substances 0.000 title claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000654 additive Substances 0.000 claims abstract description 5
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 5
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 2
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 claims description 2
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- 229910021523 barium zirconate Inorganic materials 0.000 abstract description 3
- 229910002971 CaTiO3 Inorganic materials 0.000 abstract 2
- 229910017676 MgTiO3 Inorganic materials 0.000 abstract 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 abstract 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 16
- 229910052573 porcelain Inorganic materials 0.000 description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 2
- 239000001095 magnesium carbonate Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910015806 BaTiO2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は誘電体（ａ器狽或物に係り、特許に式雫；♀く
が２０００以−１＝、の高誘電率誘電体磁器組成物に関
する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a dielectric material (a device), and the present invention relates to a dielectric material having a high dielectric constant dielectric porcelain composition with a formula: relating to things.
磁器コンデンサや積層コンデンサ、更には高周波用コン
デンサ、高圧コンデンサとして広く利用されている高誘
電率磁器組成物として、従来、チタン酸バリウム（Ｂａ
ＴｉＯｔ）系の磁器組成物を主成分としたものが一般的
に実用化されている。Barium titanate (Ba
TiOt)-based ceramic compositions as a main component are generally put into practical use.
ところが、従来のＢａＴｉ０．系の誘電体は強誘電性で
あるため、誘電損失が大きく１、交流破壊電圧も２．０
＝３．５ＫＶ／ ｕｉと低いという間顕点があった。However, the conventional BaTi0. Since the dielectric of the system is ferroelectric, the dielectric loss is large, and the AC breakdown voltage is also 2.0.
There was a notable point that it was as low as 3.5KV/ui.
従って、本発明の目的は、誘電損失が小さく、交流破壊
電圧の高０１高誘電率磁器組成物を提供することである
。Therefore, an object of the present invention is to provide a high-01 high dielectric constant ceramic composition with low dielectric loss and AC breakdown voltage.
〔課題を解決するための手段及び作用〕本発明者等は、
鋭意研究の結果、次の組成の磁器組成物が、前記目的を
達成することを見出した。[Means and effects for solving the problem] The present inventors,
As a result of intensive research, it was discovered that a porcelain composition having the following composition achieves the above object.
即ち、
チタン酸バリウム（ＢａＴｉＯ２） ：４５．Ｏ〜６０
．０モル％ジルコン酸バリウム（ＢａＺｒ○、） ：１
０．０〜１８．０モル％チタン酸カルシウム（ＣａＴｉ
Ｏ２） ：２４．Ｏ〜３５．０モル％チタン酸マグネシ
ウム（ＭｇＴｉＯ＊）：２．４〜６．５モル％の範囲か
らなる主組成物１００モル％に対し、酸化ニッケル（Ｎ
ｉＯ）：０．０５〜０．４重量％酸化セリウム（Ｃｅ○
２） ：０．０３〜０．３重量％酸化マンガン（ＭｎＯ
）：０．０３〜０．１９重量％酸化ケイ素（ＳｉＯ２）
：Ｏ〜０．４重量％の範囲からなる添加物を含有させて
なることを特徴とする高誘電率磁器組成物である。That is, barium titanate (BaTiO2): 45. O~60
．． 0 mol% barium zirconate (BaZr○): 1
0.0-18.0 mol% calcium titanate (CaTi
O2) :24. Nickel oxide (N
iO): 0.05-0.4% by weight cerium oxide (Ce○
2): 0.03-0.3% by weight manganese oxide (MnO
): 0.03-0.19% by weight silicon oxide (SiO2)
: A high dielectric constant ceramic composition characterized by containing an additive in the range of O to 0.4% by weight.
この組成の磁器組成物を用いることによって、誘電損失
が小さく、交流破壊電圧の高い高誘電率を有する誘電体
磁器組成物を得ることができる。By using a ceramic composition having this composition, a dielectric ceramic composition having a low dielectric loss, a high AC breakdown voltage, and a high dielectric constant can be obtained.
２）、炭酸カルシウム（ＣａＣＯ２）、炭酸マグネシウ
ム（ＭｇＣＯ２）、酸化ニッケル（ＮｉＯ）、酸化セリ
ウム（ＣｅＯ２）、炭酸マンガン（ＭｎＣＯ３）、酸化
ケイ素（Ｓ ｉ Ｏｚ ）等を用い、焼成後の組成が別
紙第１表の資料の如くになるよう秤量、配合した。2) Calcium carbonate (CaCO2), magnesium carbonate (MgCO2), nickel oxide (NiO), cerium oxide (CeO2), manganese carbonate (MnCO3), silicon oxide (S i Oz ), etc. are used, and the composition after firing is shown in a separate sheet. The ingredients were weighed and mixed as shown in Table 1.
以下余白
〔実施例〕
出発原料として炭酸バリウム（ＢａＣ○、）、酸化チタ
ン（Ｔｉｅり 、酸化ジルコニウム（ＺｒＯ次に各ＹＴ
、 Ｖ４の湿式混合量↑↑４′２０峙間ｊｊい、用λ本
乾燥後、１．１００〜１２００℃７仮焼成し、後に才且
朽）砕した。The following margins [Example] As starting materials, barium carbonate (BaC○), titanium oxide (Tie oxide), zirconium oxide (ZrO), and then each YT
After drying, the wet mixture amount of V4 was ↑↑4'20 times, and after drying, it was pre-calcined at 100-1200°C for 7 days, and then crushed.
これを再び湿式混合Ｌ７で微粉砕を行い、脱水斡燥後、
ボリビ、：、ルアル、′１−ル（ＰＶＡ）イ７・バイン
ダーとして加え、造粒した。これを直径と厚みが１６
、５ ｍ＊φ×１゜２翻１の円板状に、３トン／（罰２
のＢ′力で成形しまた。This was finely pulverized again using wet mixing L7, and after dehydration and drying,
Bolivi: Lual (PVA) was added as a binder and granulated. The diameter and thickness of this is 16
, 3 tons/(punishment 2
Form it with the B' force.
その後、１２００〜・・−１３５０°Ｃで焼成し７′：
誘電体磁器組成物を得）、九
各誘電体磁器組成物の両面に銀電極イ・−焼４＝Ｊけｊ
２、リード線を取ト１ける。これを洞窟資料とｊ−で各
試料の電気的特１／１．を測定！、、 ノ；〜ものを第
１表に示す。After that, it was baked at 1200 to -1350°C for 7':
A dielectric porcelain composition was obtained), and silver electrodes were placed on both sides of each dielectric porcelain composition.
2. Connect the lead wire. This is compared to the cave materials and the electrical characteristics of each sample 1/1. Measure! ,, ノ; ~ are shown in Table 1.
なお、第１表におむ）て、誘電率（、！、）及び誘電損
失（ｔ、ａｎδ）は周波数Ｉ ＫＨｚ 、１ ■”？？
測測定２、絶縁抵抗（ＩＲ）ば直流５００Ｖを印力１コ
１〜て測定し、破壊電圧は試料の交流破壊電ＥＦＥを測
定し、試料の厚みで割り、単位厚み当たりの破壊電圧（
Ｅｂ）とし、焼結性は焼成温度１３４．０℃で焼成した
試料について調べた。In addition, in Table 1), the dielectric constant (,!,) and dielectric loss (t, anδ) are at the frequency I KHz, 1 ■"??
Measurement measurement 2: Insulation resistance (IR) is measured by applying DC 500V to each unit, and breakdown voltage is determined by measuring the AC breakdown electric potential EFE of the sample, dividing by the thickness of the sample, and calculating the breakdown voltage per unit thickness (
Eb), and the sinterability was investigated on samples fired at a firing temperature of 134.0°C.
また、第１表においｒ、試Ｆ４Ｎｎ、１．５．８．１
０、１４、１５、１６、２０、２４、２７、３１．３２
．３３．３４−．３５は本発明の実施例には含まれない
。Also, in Table 1, r, test F4Nn, 1.5.8.1
0, 14, 15, 16, 20, 24, 27, 31.32
．． 33.34-. 35 is not included in the embodiments of the present invention.
第１表から明らかな如く２、本発明の鐵電体磁器団或物
は、誘電・率が２０００以上と高く、破壊電圧も高く温
度特性も良好′／ｌ（誘電体磁器組成物が得られる。As is clear from Table 1, the iron-electric ceramic composition of the present invention has a high dielectric constant of 2000 or more, a high breakdown voltage, and good temperature characteristics. .
次（１、二本発明の組成範囲について説明する。Next (1, 2) The composition range of the present invention will be explained.
Ｖ３ ｆｌＴ ｉ ０３が４５，０ヨ：ル％未満である
と、誘電率が大幅に低下し、破壊電圧も悪化１．（第１
表試料Ｎｏ、１６参照） 、６０．０モル％以しになる
と、誘電損９５：が悪く、破壊電圧も低くなる（第１表
試＄４ Ｎｏ、１参照）。If V3 flT i 03 is less than 45.0%, the dielectric constant will drop significantly and the breakdown voltage will deteriorate.1. (1st
When the amount exceeds 60.0 mol %, the dielectric loss (95:) is poor and the breakdown voltage is also low (see Sample No. 4, Table 1).
またＢａＺｒ０１が１０．０干ル％未満では誘電損失が
、１．０％以上と悪化し１、破壊電圧も低下する（第１
表試料Ｎｏ、１参照）。１８．０七ル％以上になる５二
、８誘電損失は低くなるが、誘電率が低くなる（第１表
試料Ｎｏ、８参照）。Furthermore, when BaZr01 is less than 10.0%, the dielectric loss worsens to 1.0% or more1, and the breakdown voltage also decreases (first
(See table sample No. 1). The dielectric loss becomes 18.07% or more, but the dielectric constant becomes low (see Sample No. 8 in Table 1).
さらにＣａ Ｔ ｉ Ｏ、ｌが２４．０モル％未満にな
ると、誘電率、破壊電圧が１ｌｆ−、較的低くなくＶ
（第１表試料Ｎｏ、５．８参照） 、３５．０モル％以
−Ｌ： ｃ；’：なると、誘電率や破壊電圧が著１．７
（低ドする（第１表試料Ｎｏ、１０．１６参照）。Furthermore, when Ca T i O,l is less than 24.0 mol%, the dielectric constant and breakdown voltage are 1lf-, which is not relatively low and V
(Refer to Sample No. 5.8 in Table 1) , 35.0 mol% or more - L: c;': When the dielectric constant and breakdown voltage are significantly 1.7.
(Refer to Sample No. 10.16 in Table 1).
ＭｇＴｉ０１が２．５’Ｅル％未溝になると１、絶縁抵
抗、破壊電圧０）劣化が目立ち（第１表試料Ｎｏ、 １
０．１５参照’） 、６．５’Ｅル％ヲ超える（１・、
誘電率や絶縁抵抗の劣化が見られる（第１表試料Ｎ０１
１４参照）。When MgTi01 becomes 2.5'Ele% ungrooved, the insulation resistance and breakdown voltage are 0) and the deterioration is noticeable (Table 1 Sample No. 1).
0.15'), exceeds 6.5'Ele% (1.,
Deterioration of dielectric constant and insulation resistance is observed (Table 1 Sample No. 1)
14).
また添加物について説明すると、ＮｉＯが、０゜０５重
重鼠より少ない２−１誘電率が低くなり、破壊電圧も劣
化Ｖる（第１表試料Ｎｏ、３３参照）１−２．０．４重
鼠％査超えると誘電損失が大きくなり、４温度特性も悪
化する（第１表試料Ｎｏ、 ２０ ｅｉｌ、’Ｙ）。Regarding additives, NiO has a 2-1 dielectric constant lower than that of a 0.05% dielectric, and the breakdown voltage also deteriorates (see Sample No. 33 in Table 1). Exceeding the mouse test results in increased dielectric loss and deteriorated four-temperature characteristics (Sample No. 20 eil, 'Y in Table 1).
Ｃｅ ０２が０．０３重型破より少ないと誘電損失が大
きくなり（第１表試料Ｎｏ、３檀参照）、０．３重量％
を超えると、誘電率が低下し、絶縁抵抗も低ｒ３″る（
第１表試料Ｎｏ、 ２４参照）。If Ce 02 is less than 0.03 heavy mold breakage, the dielectric loss will increase (see Table 1, sample No. 3), and 0.3% by weight.
If it exceeds , the dielectric constant decreases and the insulation resistance also decreases r3'' (
(See Sample No. 24 in Table 1).
Ｍ ｎ Ｏが０．１９乗星％より人きくなる。３−１破
１お電圧が低−Ｆする（第１表試料Ｎｏ、２７参照）
、 ０．０３重室部より少ないノー、誘電率が小さく焼
結外も悪い（第１表試料Ｎｏ、 ３５参照）。M n O becomes more personable than 0.19th power star%. 3-1 Break 1 The voltage is low -F (see sample No. 27 in Table 1)
, less than 0.03 double chamber, the dielectric constant is small and the sintering quality is poor (see Sample No. 35 in Table 1).
また、５ｉ０２が０．４重量％を超えると焼成時素地に
（＝ｊ着が見られ焼結性が悪く、誘電率も低くなる（第
１表試料Ｎｏ。３１参照）。Furthermore, if 5i02 exceeds 0.4% by weight, adhesion is observed on the base material during firing, resulting in poor sinterability and low dielectric constant (see Sample No. 31 in Table 1).
なお、添加物を全く混合１．ないと、誘電率が低く１．
誘電Ｉ員失も破壊電圧も低下する（第１表試料Ｎｏ、３
２参照）。In addition, if no additives are mixed 1. Otherwise, the dielectric constant will be low and 1.
Both dielectric I member loss and breakdown voltage decrease (Table 1 Sample No. 3)
(see 2).
〔発明の効果］
本発明の４１１成の誘電体磁器組成物は、誘電率が２０
００以上と高誘電率であるし、破壊電圧、ｋｌＱ縁抵抗
抵抗＜１．誘電損失が少へく、温度特性も良好な誘電体
磁器組成物゛である。[Effect of the invention] The dielectric ceramic composition of 411 of the present invention has a dielectric constant of 20
It has a high dielectric constant of 00 or more, and the breakdown voltage and klQ edge resistance are <1. It is a dielectric ceramic composition with low dielectric loss and good temperature characteristics.
従って磁器ブンテ゛ンサ等電イ部品材料として大変有用
である。Therefore, it is very useful as a material for electrical parts such as porcelain bumpers.
Claims (1)
０．０モル％ジルコン酸バリウム（ＢａＺｒＯ＿３）：
１０．０〜１８．０モル％チタン酸カルシウム（ＣａＴ
ｉＯ＿３）：２４．０〜３５．０モル％チタン酸マグネ
シウム（ＭｇＴｉＯ＿３）：２．４〜６．５モル％の範
囲からなる主組成物１００モル％に対し、酸化ニッケル
（ＮｉＯ）：０．０５〜０．４重量％酸化セリウム（Ｃ
ｅＯ＿２）：０．０３〜０．３重量％酸化マンガン（Ｍ
ｎＯ）：０．０３〜０．１９重量％酸化ケイ素（ＳｉＯ
＿２）：０〜０．４重量％の範囲からなる添加物を含有
させてなることを特徴とする誘電体磁器組成物。Barium titanate (BaTiO_3): 45.0-6
0.0 mol% barium zirconate (BaZrO_3):
10.0-18.0 mol% calcium titanate (CaT
iO_3): 24.0 to 35.0 mol% Magnesium titanate (MgTiO_3): 100 mol% of the main composition consisting of 2.4 to 6.5 mol%, nickel oxide (NiO): 0.05 ~0.4% by weight cerium oxide (C
eO_2): 0.03-0.3% by weight manganese oxide (M
nO): 0.03-0.19% by weight silicon oxide (SiO
_2): A dielectric ceramic composition characterized by containing an additive in the range of 0 to 0.4% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1199048A JP2824083B2 (en) | 1989-07-31 | 1989-07-31 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1199048A JP2824083B2 (en) | 1989-07-31 | 1989-07-31 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0365558A true JPH0365558A (en) | 1991-03-20 |
| JP2824083B2 JP2824083B2 (en) | 1998-11-11 |
Family
ID=16401248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1199048A Expired - Lifetime JP2824083B2 (en) | 1989-07-31 | 1989-07-31 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2824083B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5604166A (en) * | 1995-02-14 | 1997-02-18 | Tdk Corporation | Dielectric ceramic composition |
| US7008894B2 (en) | 2002-03-26 | 2006-03-07 | Tdk Corporation | High permittivity dielectric ceramic composition and electronic device |
| JP2011190145A (en) * | 2010-03-15 | 2011-09-29 | Tdk Corp | Dielectric ceramic composition and electronic component |
| US8776382B2 (en) | 2008-10-02 | 2014-07-15 | Ihi Corporation | Cutting instrument |
| TWI573775B (en) * | 2015-07-16 | 2017-03-11 | Ceramic capacitor dielectric material | |
| CN111848153A (en) * | 2020-08-06 | 2020-10-30 | 深圳市兆普莱科技有限公司 | Microwave dielectric ceramic, preparation method of microwave dielectric ceramic and communication device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100503510C (en) * | 2006-10-20 | 2009-06-24 | 同济大学 | Composite ceramic material for dielectric adjustable microwave device |
-
1989
- 1989-07-31 JP JP1199048A patent/JP2824083B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5604166A (en) * | 1995-02-14 | 1997-02-18 | Tdk Corporation | Dielectric ceramic composition |
| CN1065218C (en) * | 1995-02-14 | 2001-05-02 | Tdk株式会社 | Dielectric ceramic composition |
| US7008894B2 (en) | 2002-03-26 | 2006-03-07 | Tdk Corporation | High permittivity dielectric ceramic composition and electronic device |
| US8776382B2 (en) | 2008-10-02 | 2014-07-15 | Ihi Corporation | Cutting instrument |
| JP2011190145A (en) * | 2010-03-15 | 2011-09-29 | Tdk Corp | Dielectric ceramic composition and electronic component |
| TWI573775B (en) * | 2015-07-16 | 2017-03-11 | Ceramic capacitor dielectric material | |
| CN111848153A (en) * | 2020-08-06 | 2020-10-30 | 深圳市兆普莱科技有限公司 | Microwave dielectric ceramic, preparation method of microwave dielectric ceramic and communication device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2824083B2 (en) | 1998-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2003109430A (en) | Dielectric porcelain composite and capacitor using it | |
| KR0161348B1 (en) | Non-reduced dielectric ceramic compositions | |
| JP4201242B2 (en) | High dielectric constant dielectric ceramic composition | |
| JP3279856B2 (en) | Dielectric porcelain composition | |
| JPH0365558A (en) | Dielectric ceramic composition | |
| JP2004238251A (en) | Dielectric ceramic composition and ceramic electronic component | |
| JP2000143338A (en) | Semiconductive ceramic and semiconductive ceramic element produced by using the ceramic | |
| JPH11255560A (en) | Production of composition containing batio3 as main component and production of laminated ceramic capacitor | |
| JP3095941B2 (en) | Dielectric porcelain composition | |
| JP2003104774A (en) | Dielectric porcelain composition and capacitor using the same | |
| JPH0365557A (en) | Dielectric ceramic composition | |
| JPS6256361A (en) | Dielectric ceramic composition | |
| JP2005041721A (en) | Dielectric porcelain composition and ceramic electronic component | |
| JP2621478B2 (en) | High dielectric constant porcelain composition | |
| US4388415A (en) | High voltage dielectric (SRT I03) | |
| JPH05334915A (en) | Dielectric porcelain composition | |
| JP2643197B2 (en) | Dielectric porcelain composition | |
| JPH07192530A (en) | Dielectric ceramic composition | |
| KR20140006991A (en) | Dielectric ceramic and single-plate capacitor | |
| JPS6049151B2 (en) | Method for manufacturing dielectric magnetic composition | |
| JP2508373B2 (en) | Dielectric ceramic composition and method for producing dielectric ceramic | |
| CN103922729A (en) | Low-dielectric-loss dielectric ceramic and preparation method thereof | |
| JPH02106811A (en) | Porcelain composition with high dielectric constant | |
| JPH02123720A (en) | Low loss porcelain capacitor | |
| JPH0238540B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070904 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080904 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090904 Year of fee payment: 11 |
|
| EXPY | Cancellation because of completion of term |