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Priority to JP1989128058UpriorityCriticalpatent/JPH0365263U/ja
Publication of JPH0365263UpublicationCriticalpatent/JPH0365263U/ja
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
H10D84/141—VDMOS having built-in components
H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D8/00—Diodes
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Semiconductor Integrated Circuits
(AREA)
Insulated Gate Type Field-Effect Transistor
(AREA)