JPH0364968A - Solid-state image sensing device and manufacture thereof - Google Patents

Solid-state image sensing device and manufacture thereof

Info

Publication number
JPH0364968A
JPH0364968A JP1201598A JP20159889A JPH0364968A JP H0364968 A JPH0364968 A JP H0364968A JP 1201598 A JP1201598 A JP 1201598A JP 20159889 A JP20159889 A JP 20159889A JP H0364968 A JPH0364968 A JP H0364968A
Authority
JP
Japan
Prior art keywords
aluminum
film
aluminum alloy
solid
state image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1201598A
Other languages
Japanese (ja)
Inventor
Hiroyuki Okada
裕幸 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP1201598A priority Critical patent/JPH0364968A/en
Publication of JPH0364968A publication Critical patent/JPH0364968A/en
Pending legal-status Critical Current

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Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To enable a flare to decrease to a detection limit or below without changing an image sensing device in other characteristics by a method wherein a TiN film is provided onto an aluminum or an aluminum alloy film which serves as an optical shielding film as coming into close contact with it and covering the whole of it. CONSTITUTION:A solid-state image sensing device is formed, where aluminum or aluminum alloy is evaporated to form an optical shielding film 1, in succession a TiN film 2 is evaporated thereon to form a two-layered film, and then the two-layered film is plasma-etched through a mixed gas of BCl3, Cl2, and N2 at the same time to form an optical shielding region. An anti-reflection film 2 of TiN is formed on the upside of the aluminum or the aluminum alloy film 1, whereby the reflected light at the surface of aluminum is decreased to 5% or below in a visible ray region and a flare is decreased to an observation limit or below.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、固体撮像素子に関し、特に入射光が撮像素子
表面で反射し、その反射光が再びレンズで反射して撮像
素子の他の画素に入射して画像が劣下するフレアー現象
を低減させる固体撮像素子及びその製造方法に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a solid-state image sensor, and in particular, the present invention relates to a solid-state image sensor, in which incident light is reflected on the surface of the image sensor, and the reflected light is reflected again by a lens and enters other pixels of the image sensor. The present invention relates to a solid-state image sensor and a method for manufacturing the same, which reduce the flare phenomenon that degrades images.

従来の技術 フォトダイオードとCCDもしくはMOS )ランジス
タを用いた固体撮像素子は、入射光を光電変換するフォ
トダイオードの部分を除いて、アルミもしくはアルミ合
金を用いて遮光している。このアルミもしくはアルミ合
金は、CCDやMOSトランジスタさらに周辺回路の配
線にも利用されている。
Conventional Solid-state imaging devices using a photodiode and a CCD or MOS transistor are shielded from light using aluminum or an aluminum alloy, except for the photodiode portion that photoelectrically converts incident light. This aluminum or aluminum alloy is also used for wiring for CCDs, MOS transistors, and peripheral circuits.

第2図は、従来の固体撮像素子の構造を示す断面図であ
り、図示するように、アルミ遮光膜1で被覆される部分
はフォトダイオード部5を除く部分全域であり、C00
部6はアルミ遮光I11の下部に位置している。なお、
図中3はCODのポリシリコンゲート、そして4は保護
膜である。
FIG. 2 is a cross-sectional view showing the structure of a conventional solid-state image sensor. As shown in the figure, the entire area covered with the aluminum light-shielding film 1 except for the photodiode section 5 is C00.
The portion 6 is located below the aluminum light shield I11. In addition,
In the figure, 3 is a COD polysilicon gate, and 4 is a protective film.

発明が解決しようとする課題 アルミもしくはアルミ合金で遮光膜を形成した場合、レ
ンズを通して固体撮像装置に入射した光は、アルミ表面
で全反射され、この反射光が再びレンズ表面で反射され
て、本来入射すべき画素部とは異なる画素部へ入射し、
フレアーとよばれる画像の劣下を生じる。このフレアー
を防ぐために、従来は、レンズ表面を反射防止膜で被覆
し、反射率を低減さ、せることによってレンズ表面での
再反射を抑えていた。しかし、レンズ表面での反射の低
下度は決して高くはなかった。
Problems to be Solved by the Invention When a light-shielding film is formed using aluminum or an aluminum alloy, the light that enters the solid-state imaging device through the lens is totally reflected on the aluminum surface, and this reflected light is reflected again on the lens surface, causing the original The light enters a pixel section different from the one it should enter,
This causes image deterioration called flare. In order to prevent this flare, conventionally, the lens surface was coated with an anti-reflection film to reduce the reflectance, thereby suppressing re-reflection on the lens surface. However, the degree of reduction in reflection on the lens surface was not at all high.

ところで、フレアーを減少させるためには、アルミもし
くはアルミ合金膜の表面で反射する光量をすくなくすれ
ばよく、たとえばアルミもしくはアルミ合金の表面にグ
レインを成長させて反射率を低下させる方法が挙げられ
る。しかしながら、グレインの成長をアルミエッチ後に
行うと、ヒルロックと呼ばれるグレインの異常成長が起
り、フォトダイオード部の開口部面積にばらつきをもた
らす。一方、アルミエッチ前にグレイン成長を行うと、
アルミエッチが難しくなる。従って、フレアー現象は依
然として画像向上のために解決すべき問題点の一つとし
て残っている。
Incidentally, in order to reduce flare, it is sufficient to reduce the amount of light reflected on the surface of the aluminum or aluminum alloy film. For example, a method of reducing the reflectance by growing grains on the surface of the aluminum or aluminum alloy can be used. However, if grains are grown after aluminum etching, abnormal growth of grains called hillock occurs, resulting in variations in the area of the opening of the photodiode section. On the other hand, if grain growth is performed before aluminum etching,
Aluminum etching becomes difficult. Therefore, the flare phenomenon still remains as one of the problems to be solved in order to improve images.

課題を解決するための手段 本発明は、上記の問題点を解決することができる固体撮
像素子の構造とこの構造を実現するものであり、本発明
の固体撮像装置は、遮光膜となるアルミもしくはアルミ
合金膜の上部に、該アルミもしくはアルミ合金膜に密着
し、かつ該アルミもしくはアルミ合金膜領域全体を覆っ
てTiN膜を設けた構造を有している。
Means for Solving the Problems The present invention provides a structure of a solid-state image sensor capable of solving the above-mentioned problems and realizes this structure. It has a structure in which a TiN film is provided on top of the aluminum alloy film in close contact with the aluminum or aluminum alloy film and covering the entire area of the aluminum or aluminum alloy film.

また、固体撮像素子を製造するにあたり、遮光膜を形成
するアルミもしくはアルミ合金の蒸着に引き続いてTi
N膜を蒸着して、二層被膜を形成し、次いで前記二層膜
をBCl3とCl2、N2の混合ガス系で同時にプラズ
マエッチして遮光領域を形成する方法を採用している。
In addition, when manufacturing solid-state image sensors, Ti
A method is employed in which a N film is vapor-deposited to form a two-layer film, and then the two-layer film is simultaneously plasma etched using a mixed gas system of BCl3, Cl2, and N2 to form a light-shielding region.

作用 TiNによる反射防止膜をアルミもしくはアルミ合金膜
の上面に形成することにより、アルミ表面での反射光は
可視光領域で5%以下に低減し、フレアーは観測限界以
下になる。
By forming an antireflection film made of functional TiN on the top surface of an aluminum or aluminum alloy film, the reflected light on the aluminum surface is reduced to 5% or less in the visible light region, and flare is below the observation limit.

実施例 以下に本発明について詳しく説明する。Example The present invention will be explained in detail below.

本発明では、アルミもしくはアルミ合金膜上に反射率の
低い膜を形成すればフレアーは減少すること、この反射
防止膜は、アルミ領域を過不足なく被覆する必要がある
ため、フォトダイオードの開口部を開ける。アルミエッ
チ時に同時にこの反射防止膜もエツチングする必要があ
ること、また、通常の誘電体膜はアルミエッチ時に同時
加工ができないため、反射防止膜は限定されること等を
考慮し、これらの条件を満足する被膜として窒化チタン
(T i N)膜をアルミあるいはアルミ合金膜の上部
に形成する構造を採用している。
In the present invention, flare is reduced by forming a film with low reflectance on the aluminum or aluminum alloy film, and this anti-reflection film needs to cover the aluminum area in just the right amount. open it. These conditions were taken into consideration, such as the need to etch this anti-reflective film at the same time as aluminum etching, and the fact that normal dielectric films cannot be processed at the same time as aluminum etch, so the anti-reflective film is limited. A structure is adopted in which a titanium nitride (T i N) film is formed on top of an aluminum or aluminum alloy film as a satisfactory film.

第1yJに本発明にかかる固体撮像素子の画素部の断面
構造を示すが、図示するようにTiN膜2がアルミ遮光
膜1の上面に形成されている点で従来の固体撮像素子と
は相違している。
1yJ shows the cross-sectional structure of the pixel portion of the solid-state image sensor according to the present invention, which differs from the conventional solid-state image sensor in that the TiN film 2 is formed on the top surface of the aluminum light-shielding film 1 as shown in the figure. ing.

ところで、TiN膜は、約100OAの厚さで茶褐色を
呈し、しかも光吸収が大きいばがりでなく、反応性スパ
ッタで形成が可能であり、しがち、アルミのプラズマエ
ッチで用いられるガスたとえばBCl 3.Ce 2と
N2との混合ガスで異方性エッチすることができる。こ
のため、TiN膜の形成はアルミ遮光膜の蒸着に引き続
いて蒸着する方法で容易に実現でき、また、このように
して形成したアルミ遮光膜とTiN膜との二層被膜は、
アルミ用のガスプラズマエツチング処理でパターニング
できる。
Incidentally, the TiN film has a thickness of about 100 OA and exhibits a brownish color, and not only does it have a high light absorption, but it can also be formed by reactive sputtering, and it tends to be formed using a gas such as BCl 3 used in plasma etching of aluminum. .. Anisotropic etching can be performed using a mixed gas of Ce 2 and N 2 . For this reason, the formation of a TiN film can be easily achieved by vapor deposition subsequent to the vapor deposition of an aluminum light shielding film, and the two-layer film of an aluminum light shielding film and a TiN film formed in this way is
Can be patterned using gas plasma etching treatment for aluminum.

このようにして形成した本発明の固体撮像素子では、フ
ォトダイオード部の開口面積は、従来例である第2図と
比較して全く変わらないため、フレアー以外の撮像特性
は変わらない。
In the solid-state imaging device of the present invention formed in this way, the aperture area of the photodiode portion is completely unchanged compared to the conventional example shown in FIG. 2, and therefore the imaging characteristics other than flare remain unchanged.

発明の効果 本発明によれば、他の撮像特性に何等の変化を生じるこ
となしに、フレアーを検出限界以下に低減させることが
できた。
Effects of the Invention According to the present invention, flare could be reduced to below the detection limit without causing any change in other imaging characteristics.

【図面の簡単な説明】[Brief explanation of drawings]

第2図に従来例であるCCD撮像素子の画素部の断面構
造の模式図を示す。
FIG. 2 shows a schematic diagram of a cross-sectional structure of a pixel portion of a conventional CCD image sensor.

Claims (1)

【特許請求の範囲】[Claims] (1)アルミもしくはアルミ合金を用いて光電変換を行
うフォトダイオード部以外の素子領域にアルミもしくは
アルミ合金の被膜を形成して遮光を行う固体撮像素子に
おいて、アルミもしくはアルミ合金の上部に、該アルミ
もしくはアルミ合金に密着し、かつ該アルミもしくはア
ルミ合金領域全体を覆ってTiNを設けた構造を有する
ことを特徴とする固体撮像素子。 2 遮光膜を形成するアルミもしくはアルミ合金の蒸着
に引き続いてTiN膜を蒸着して、二層被膜を形成し、
次いで前記二層膜をBCl_3とCl_2、N_2の混
合ガス系で同時にプラズマエッチして遮光領域を形成す
ることを特徴とする固体撮像素子の製造方法。
(1) In a solid-state image sensor that uses aluminum or an aluminum alloy to form a light-shielding film of aluminum or an aluminum alloy on an element area other than a photodiode that performs photoelectric conversion, the aluminum or aluminum alloy is coated on top of the aluminum or aluminum alloy. Alternatively, a solid-state imaging device characterized by having a structure in which TiN is provided in close contact with an aluminum alloy and covering the entire aluminum or aluminum alloy region. 2. Following the vapor deposition of aluminum or aluminum alloy that forms the light-shielding film, a TiN film is vapor-deposited to form a two-layer film,
A method for manufacturing a solid-state image sensor, characterized in that the two-layer film is then plasma-etched simultaneously with a mixed gas system of BCl_3, Cl_2, and N_2 to form a light-shielding region.
JP1201598A 1989-08-03 1989-08-03 Solid-state image sensing device and manufacture thereof Pending JPH0364968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1201598A JPH0364968A (en) 1989-08-03 1989-08-03 Solid-state image sensing device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1201598A JPH0364968A (en) 1989-08-03 1989-08-03 Solid-state image sensing device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH0364968A true JPH0364968A (en) 1991-03-20

Family

ID=16443709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1201598A Pending JPH0364968A (en) 1989-08-03 1989-08-03 Solid-state image sensing device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH0364968A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5527425A (en) * 1995-07-21 1996-06-18 At&T Corp. Method of making in-containing III/V semiconductor devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144218A (en) * 1976-05-26 1977-12-01 Sony Corp Solid pickup element
JPS5842368A (en) * 1981-09-07 1983-03-11 Fuji Photo Optical Co Ltd Solid-state image pickup element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144218A (en) * 1976-05-26 1977-12-01 Sony Corp Solid pickup element
JPS5842368A (en) * 1981-09-07 1983-03-11 Fuji Photo Optical Co Ltd Solid-state image pickup element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5527425A (en) * 1995-07-21 1996-06-18 At&T Corp. Method of making in-containing III/V semiconductor devices

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