JPH0361375A - Thin film forming device - Google Patents
Thin film forming deviceInfo
- Publication number
- JPH0361375A JPH0361375A JP19762889A JP19762889A JPH0361375A JP H0361375 A JPH0361375 A JP H0361375A JP 19762889 A JP19762889 A JP 19762889A JP 19762889 A JP19762889 A JP 19762889A JP H0361375 A JPH0361375 A JP H0361375A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film forming
- discharge
- substrate
- forming apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000002994 raw material Substances 0.000 claims description 11
- 238000007599 discharging Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 7
- 229910003460 diamond Inorganic materials 0.000 description 16
- 239000010432 diamond Substances 0.000 description 16
- 230000008021 deposition Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000010891 electric arc Methods 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、導電性基板上に薄膜を形成する装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for forming a thin film on a conductive substrate.
以下、導電性基板上に薄膜を形成する薄膜形成装置とし
て、Ｓｉ基板上にダイヤモンド薄膜を形成するダイヤモ
ンド薄膜形成装置を例に、本発明について詳細に述べる
。第２図に、従来のダイヤモンド薄膜形成装置の一例を
示す。このダイヤモンド薄膜形成装置については、文献
「アプライドフィジックス レター（Ａｐｐｌ Ｐｈｙ
ｓ Ｌｅｔｔ＞＋５０巻、２０号、１．６５８ページ、
１９８８年に詳細に記載されている。この従来のダイヤ
モンド薄膜形成装置は、一方がメツシュのアノード電極
６、他方がホロカソードのカソード電極７である一対の
対向電極を用い、アノード電極６の背面に基板８を配置
し、カソード電［７とアノード電極６の間に直流電源９
を接続した構成である。この従来のダイヤモンド薄膜形
成装置では、カソード電極７とアノード電極６間の空間
５（以下放電空間と記す〉の圧力を２５Ｔｏ ｒ ｒ程
度に保持しながら原料ガス供給用配管１１から原料ガス
を放電空間に流し、カソード電極７とアノード電極６間
の直流グロー放電により原料ガスの励起を行い、基板８
上にダイヤモンド薄膜を形成している。Hereinafter, the present invention will be described in detail using a diamond thin film forming apparatus that forms a diamond thin film on a Si substrate as an example of a thin film forming apparatus that forms a thin film on a conductive substrate. FIG. 2 shows an example of a conventional diamond thin film forming apparatus. This diamond thin film forming device is described in the literature “Applied Physics Letter (Appl Phys.
s Lett>+50 volumes, 20 issues, 1.658 pages,
It is described in detail in 1988. This conventional diamond thin film forming apparatus uses a pair of opposing electrodes, one being a mesh anode electrode 6 and the other being a hollow cathode electrode 7. A substrate 8 is placed on the back side of the anode electrode 6, and the cathode electrode [7 and DC power supply 9 between anode electrode 6
This is a configuration in which the following are connected. In this conventional diamond thin film forming apparatus, the raw material gas is supplied from the raw material gas supply piping 11 to the discharge space while maintaining the pressure in the space 5 (hereinafter referred to as the discharge space) between the cathode electrode 7 and the anode electrode 6 at approximately 25 Torr. The raw material gas is excited by DC glow discharge between the cathode electrode 7 and the anode electrode 6, and the substrate 8
A thin diamond film is formed on top.
ダイヤモンド薄膜形成装置においては、速い薄膜の堆積
速度が強く除まれる。速い薄膜の堆積速度得るためには
、原料ガスの圧力を高め、原料ガスの量を増加させれば
よい。しかし、従来のダイヤモンド薄膜形成装置におい
ては、原料ガスの圧力を高めると放電が不安定になり、
電流が集中したアーク放電が発生する。アーク放電が発
生すると、グラファイト状カーボンの増加及び堆積した
ダイヤモンド薄膜の面内の膜厚の均一性が著しく悪くな
るため、原料ガスの圧力を２５Ｔｏ ｒ ｒ程度の低圧
に保持し、対向電極間の放電をグロー放電に維持してい
る。このように、原料ガスの圧力を高めることができな
いためダイヤモンド薄膜の堆積速度が遅い。また、堆積
する膜質が均質であることも重要である。しかし、従来
のグロー放電による原料ガスの高温プラズマにより基板
温度の制御が難しく、グラファイトの析出が多くなる欠
点があった。さらに、従来のダイヤモンド薄膜形成装置
ではメツシュのアノード電極の後に基板が設置されるた
め、メツシュの影になった部分の堆積速度が遅くなり、
堆積むらができ、均一な膜が得られない。In diamond thin film forming apparatuses, fast thin film deposition rates are strongly excluded. In order to obtain a fast thin film deposition rate, the pressure of the source gas may be increased and the amount of the source gas may be increased. However, in conventional diamond thin film forming equipment, when the pressure of the raw material gas is increased, the discharge becomes unstable.
Arc discharge with concentrated current occurs. When arc discharge occurs, the amount of graphitic carbon increases and the uniformity of the in-plane thickness of the deposited diamond thin film becomes extremely poor. The discharge is maintained as a glow discharge. As described above, since the pressure of the source gas cannot be increased, the deposition rate of the diamond thin film is slow. It is also important that the quality of the deposited film is homogeneous. However, it is difficult to control the substrate temperature due to the high-temperature plasma of the raw material gas generated by conventional glow discharge, which has the drawback of increasing precipitation of graphite. Furthermore, in conventional diamond thin film forming equipment, the substrate is placed after the anode electrode of the mesh, which slows down the deposition rate in the shadowed area of the mesh.
Deposition becomes uneven and a uniform film cannot be obtained.
本発明の目的は、基板に堆積する薄膜の堆積速度が速く
、かつ膜厚均一性及び均質性のすぐれた薄膜形成装置を
提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film forming apparatus that can deposit a thin film on a substrate at a high deposition rate and has excellent film thickness uniformity and homogeneity.
本発明の薄膜形成装置は、原料ガス供給手段と、原料ガ
スを放電するための一対の対向電極とこの対向電極間に
高圧のパルス電圧を印加するための高圧パルス電源と、
原料カスを予め電離させる予備電離器とを少くとも備え
、対向電極の一方に薄膜を堆積・成長させるための導電
性基板を用いることを特徴としている。The thin film forming apparatus of the present invention includes a source gas supply means, a pair of opposing electrodes for discharging the source gas, and a high voltage pulse power source for applying a high pulse voltage between the opposing electrodes.
It is characterized in that it is equipped with at least a pre-ionizer that ionizes raw material waste in advance, and uses a conductive substrate on one of the opposing electrodes for depositing and growing a thin film.
なお、予備電離器としては、コロナ放電予備電離器、Ｕ
Ｖ予備電離器、Ｘ線予備、さらには紫外線およびそれよ
り短波長の光が発振するレーザ装置等が含まれる。In addition, as a pre-ionizer, a corona discharge pre-ionizer, U
These include a V pre-ionizer, an X-ray pre-ionizer, and a laser device that oscillates ultraviolet rays and light of shorter wavelengths.
本発明による薄膜形成装置では、予備電離器で発生する
紫外線やＸ線またはレーザ光で、大気圧以上の高気圧の
原料ガスを予備電離するので、アーク放電のない面方向
に均一なパルス放電を得られ、原料ガスを均一に励起で
きる。また、一対の対向電極の一方が薄膜が形成される
導電性基板であるから、導電性基板の全面がむらなく、
原料ガスが均一に励起されている放電プラズマに直接晒
されるため、膜厚が均一で、均質な膜形成が可能になる
。さらに、本発明による薄膜形成装置では、放電がパル
ス放電であるため、平均放電電力が小さく基板温度への
影響が少なく均質な堆積が可能となる。The thin film forming apparatus according to the present invention pre-ionizes the raw material gas at high pressure above atmospheric pressure using ultraviolet rays, X-rays, or laser light generated by the pre-ionizer, so that uniform pulse discharge can be obtained in the plane direction without arc discharge. The source gas can be uniformly excited. In addition, since one of the pair of opposing electrodes is a conductive substrate on which a thin film is formed, the entire surface of the conductive substrate is evenly distributed.
Since the raw material gas is directly exposed to uniformly excited discharge plasma, it is possible to form a homogeneous film with uniform thickness. Furthermore, in the thin film forming apparatus according to the present invention, since the discharge is a pulse discharge, the average discharge power is small, and the influence on the substrate temperature is small, and homogeneous deposition is possible.
次に、図面を用いて本発明の詳細な説明する。第１図は
本発明の一実施例であるダイヤモンド薄膜形成装置で、
本発明に関わる部分のみを示している。Next, the present invention will be explained in detail using the drawings. Figure 1 shows a diamond thin film forming apparatus which is an embodiment of the present invention.
Only the parts related to the present invention are shown.
第１図に示した薄膜形成装置は、第２図に示した従来の
薄膜形成装置ヒ異なり、Ｘ線予備電離器１と一対の対向
電極の一方の電極を兼ねる導電性基板であるＳｉ基板２
、一対の対向電極のもう片方の電極（以下、組電極）３
、及び高圧パルス電源４とを備えている。この実施例に
おいては、原料供給用配管く図示省略）から供給された
放電空間５中の原料ガスである大気圧のＣｌ−１４とＨ
、をＸ線予備電離器１により予備電離を行い、その後、
高圧パルス電源４により間隔が２５開のＳｉ基板１と組
電極３との間に２０ｋＶ程度の高電圧パルスを印加し、
放電空間５の原料ガスを励起するパルス放電を行わせ、
Ｓｉ基板２にダイヤモンド薄膜を均一な膜厚で、均質に
堆積されている。The thin film forming apparatus shown in FIG. 1 is different from the conventional thin film forming apparatus shown in FIG.
, the other electrode of a pair of opposing electrodes (hereinafter referred to as a set of electrodes) 3
, and a high voltage pulse power source 4. In this embodiment, atmospheric pressure Cl-14 and H
, is pre-ionized by the X-ray pre-ionizer 1, and then,
A high voltage pulse of about 20 kV is applied between the Si substrate 1 and the set electrode 3 with a gap of 25 mm by a high voltage pulse power source 4,
A pulse discharge is performed to excite the raw material gas in the discharge space 5,
A diamond thin film is uniformly deposited on a Si substrate 2 with a uniform thickness.
第１図の実施例では導電性基板にＳｉ基板を用いている
が本発明の導電性基板はＳｔ基板に限定するものではな
い。また、原料ガスも第１図の実施例に限定されない。In the embodiment shown in FIG. 1, a Si substrate is used as the conductive substrate, but the conductive substrate of the present invention is not limited to an St substrate. Furthermore, the raw material gas is not limited to the embodiment shown in FIG.
加えて、第１−図の実施例では導電性基板を加熱してい
ないが、加熱する場合も本発明に含まれる。さらに、本
発明においては予備電離器として、第１図の実施例のＸ
線予備電離器に限定せず、コロナ放電予備電離器、ＵＶ
予備電離器、紫外線およびそれより短波長の光が発振す
るレーザ装置を用いてもよい。In addition, although the conductive substrate is not heated in the embodiment shown in FIG. 1, the present invention also includes the case where the conductive substrate is heated. Furthermore, in the present invention, as a pre-ionizer, X of the embodiment shown in FIG.
Not limited to line pre-ionizer, corona discharge pre-ionizer, UV
A pre-ionizer, a laser device that emits ultraviolet light and light of a shorter wavelength may also be used.
以上述べたように、本発明による薄膜形成装置では従来
装置に比べ薄膜の堆積速度を速くすることができる。As described above, the thin film forming apparatus according to the present invention can increase the thin film deposition rate compared to conventional apparatuses.
第１図は本発明の一実施例であるダイヤモンド薄膜形成
装置の概略図、第２図は従来の直流グロー放電を用いた
ダイヤモンド薄膜形成装置の断面図を示している。
］・・・Ｘ線予備電離器、２・・・導電性基板、３・・
・組電極、４・・・高圧パルス電源、５・・・放電空間
、６・・・メツシュアノード電極、７・・・カソード電
極、８・・・基板、９・・・直流電源。FIG. 1 is a schematic diagram of a diamond thin film forming apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional diamond thin film forming apparatus using direct current glow discharge. ]... X-ray pre-ionizer, 2... Conductive substrate, 3...
- Electrode assembly, 4... High voltage pulse power supply, 5... Discharge space, 6... Mesh anode electrode, 7... Cathode electrode, 8... Substrate, 9... DC power supply.
Claims (1)
の一対の対向電極と、前記対向電極間に高圧のパルス電
圧を印加するための高圧パルス電源とを少くとも備えて
いる薄膜形成装置において、薄膜を形成する基板を前記
対向電極の一方の電極に用い、原料ガスを予め電離させ
る予備電離器を備えたことを特徴とした薄膜形成装置。A thin film forming apparatus comprising at least a source gas supply means, a pair of opposing electrodes for discharging and exciting the source gas, and a high voltage pulse power source for applying a high pulse voltage between the opposing electrodes, A thin film forming apparatus, characterized in that the substrate on which the thin film is to be formed is used as one of the counter electrodes, and is equipped with a pre-ionizer that ionizes the raw material gas in advance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19762889A JPH0361375A (en) | 1989-07-28 | 1989-07-28 | Thin film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19762889A JPH0361375A (en) | 1989-07-28 | 1989-07-28 | Thin film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0361375A true JPH0361375A (en) | 1991-03-18 |
Family
ID=16377647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19762889A Pending JPH0361375A (en) | 1989-07-28 | 1989-07-28 | Thin film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0361375A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10154598A (en) * | 1996-05-24 | 1998-06-09 | Sekisui Chem Co Ltd | Glow discharge plasma processing method and device thereof |
-
1989
- 1989-07-28 JP JP19762889A patent/JPH0361375A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10154598A (en) * | 1996-05-24 | 1998-06-09 | Sekisui Chem Co Ltd | Glow discharge plasma processing method and device thereof |
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